201019720 六、發明說明： · 【發明所屬之技術領域】 本發明係提供一種相機模組及其製作方法，尤其是指 一種晶圓級相機模組及其製作方法。 【先前技術】 晶圓級相機模組主要是先將具有複數用以匯聚光線之 透鏡之透鏡陣列結合於具有複數影像感測單元的晶圓基板 上，然後再將個別之影像感測單元連同對應位於其上之透 鏡自s亥晶圓基板--分割下來。 相較於傳統用於手持式電子裝置之相機模組來說，晶 圓級相機模組不僅具有體積大幅縮小的優勢，更由於採用 半導體製程來進行大量生產，使得單一晶圓級相機模組之 製作成本相較於傳統相機模組而言大幅降低。 ,但由於該透鏡陣列製作成型時，其外型之曲率容易在 製私+變化而與原始設計有所差異，造成實際焦距與設計 ❹有所出入，並且由於該透鏡陣列在與該晶圓基板結合時其 膠著厚度不易控制而會產生厚度上的變異，皆會導致各透 鏡與對應的影像感測單元之間的距離產生變化，導致調制 轉換函數（MTF)未達預定值而使得解析度下降。 【發明内容】 因此，本發明之一目的，在於提供一種晶圓級相機模 組’可具有較佳之解析度。 、 本發明之另一目的，在於提供一種上述晶圓級相機模 組之製作方法^ 201019720 為達上述目的，本發明提供一種晶圓級相機模組，包 含一基板、一影像感測單元、一濾光片、一透鏡、一鏡 座，以及一定焦鏡組。該影像感測單元形成於該基板上。 該濾光片設置於該影像感測單元上。該透鏡設置於該濾光 片上。該鏡座設置於該透鏡上，且該鏡座界定出一露出其 下方之該透鏡的通道。該定焦鏡組設置於該鏡座之通道 内’且該定焦鏡組之一焦點係位於該影像感測單元上。 此外’本發明更提供一種上述晶圓級相機模組之製作 ®方法，包含以下步驟：首先提供一晶圓基板，該晶圓基板 之上表面形成有複數個彼此相鄰之影像感測單元，其次設 置一濾光片於該晶圓基板上且覆蓋該等影像感測單元，接 著設置一透鏡陣列基板於該濾光片上，該透鏡陣列基板具 有複數個彼此相鄰且分別對應位於該等影像感測單元上方 之透鏡，然後設置一鏡座陣列於該透鏡陣列基板上該鏡 座陣列具有複數個彼此相鄰且分別對應位於該等透鏡上之 ®鏡座，各該鏡座界定出一露出其下方之該透鏡的通道，並 且自上述結構將各該影像感測單元以及覆蓋於其上之部份 該濾光片、該透鏡，以及該鏡座分割下來；最後分別將複 數個定焦鏡組置入該等鏡座之通道内，並調整各該定 組相對各該透鏡的距離。 ^明藉由在該透鏡上設置該鏡座，供該定焦鏡組設 /、内’可使該定焦鏡㈣於相對該影㈣測單元調整 最佳位置&本發明之晶圓級相機模組之光學性能最佳 201019720 【實施方式】 有關本發明之技術内容’在以下配合參考圖式之較佳 實施例中，將可清楚地說明： 如第一圖及第二圖所示，本發明之晶圓級相機模組之 第一較佳實施例，該晶圓級相機模組包含一基板11、一形 成於該基板11上之影像感測單元20，一設置於該影像感測 單元20上之濾光片31、一設置於該濾光片31上之透鏡41， 一設置於該透鏡41上之鏡座51，以及一設置於該鏡座51内 ®之定焦鏡組60。 該基板11為一矽基板。該影像感測單元2〇係以半導體 製程形成於該基板11之上表面。該影像感測單元2〇為一電 荷耦合感測元件或一互補性金氧半感測元件。該基板丨丨之 下表面更形成有複數接塾（圖未示）’以及複數分別由該 等接墊向上延伸穿過該基板U以與該等影像感測單元2〇電 連接之内引線（圖未示）。 ❹ 該濾光片31包含一濾光片本體，以及一設置於該濾光 片本體上的抗反射膜層。該濾光月本體為一供紅外光通過 之紅外光濾光片或一低通濾光片。並且，該濾光片本體可 為玻璃或塑膠材質。 、♦該透鏡41係由半導體製程所製成，其具有一用可折射 光線之曲面411 。在本實施例中，該曲面411為一凸面， 實際實施則不以此限。 該鏡座51界定出一露出其下方之該透鏡41的通道 5U 。該定焦鏡組60設置於該鏡座μ之通道511内，且該 201019720 定焦鏡組60之一焦點係位於該影像感測單元如上。★亥定 鏡組60包含一鏡片或為多數鏡片之組合。 只疋 如第二圖所示，本發明之晶圓級相機模組之第二較佳 實施例，大致與第-較佳實施例相同，不同之處在於 座51及該透鏡41為一體成型者。 本發明之晶SJ級相龍組可制於手機相機模組、 記型電腦之相機模組、網路攝影機之相機模組，以及 器之相機模組。 見 Φ 卩下說明上述本發明之晶圓級相機模組的製作方法， 如第四圖所示，該方法包含下列步驟： 首先，步驟100，如第五圖所示，提供一晶圓基板 1〇，該晶圓基板ίο之上表面係以半導體製程形成有該等彼 此相鄰之影像感測單元20。此外，並使該晶圓基板1〇之下 表面形成有複數接墊（圖未示），以及複數分別由該等接 聲向上延伸穿過該晶圓基板10以與該等影像感測軍元2〇電 ❹連接之内引線（圖未示）。 ▲其次，步驟200 ’如第六圖所示，設置一遽光片雜 該晶圓基板10上且覆蓋該等影像感測單元2〇。 然後，步驟300 ’如第七圖所示，設置一透鏡陣列基 板40於該渡光片30上，該透鏡陣列基板4〇具有複數個彼此 相鄰且分別對應位於該等影像感測單元上方之透鏡41。 接著，步驟400，如第八圖所示，設置一鏡座陣列於 該透鏡陣列基板40上，該鏡座陣列具有複數個彼此相鄰且 刀別對應位於該等透鏡41上之鏡座51，各該鏡座51界定出 6 201019720 一露出其下方之該透鏡41的通道511 。 並且，如第九圖所示，步驟5〇〇，先自上述結構將形 成有各該影像感測單元2G之部份基板u，以及覆蓋於續影 像感測單MG上之部份該渡光片31、該透_，以及該鏡 座51分割下來。 最後，步驟_，分別將複數個定焦鏡組60置入該等 鏡座51之通道511 π ’並調整各該定线組㈣目對各該透 ^的距離’即完成如第十圖所示之本發明之晶圓 模組。 此外，如第三圖所示之該鏡座51及該透鏡41為一體成 型的晶圓級相機模組，則是在上述步鄉·及步驟· 中」提供-體成型之鏡座陣列5〇及透鏡陣列基板奶，並將 其设置於該滤光片30上，其餘步驟則與第四圖所示之上述 製作方法的步驟相同。 ^综上所述，本發明藉由在該透鏡41上設置該鏡座51， ❿供该定焦鏡組60設置於其内，可使該定焦鏡組的易於相對 該影像感測單元20調整至最佳位置，使本發明之晶圓級相 機模組之光學性能達到最佳化，確實達成本發明之功效。 以上所述者僅為本發明之較佳實施例，並非用以限定 本發明之實施範圍。凡依本發明申請專利範圍所作之等效 變化與修飾，皆仍屬本發明專利所涵蓋範圍之内。 【圖式簡單說明】 第一圖為本發明之晶圓級相機模組的第一較佳實施例 的分解圖。 201019720 第二圖為本發明之晶圓級相機模組的第一較佳實施例 的剖視圖。 第三圖為本發明之晶圓級相機模組的第二較佳實施例 的剖視圖。 第四圖為本發明之晶圓級相機模組之製作方法的流程 圖。 第五圖至第十圖為本發明之晶圓級相機模組之製作方 法各階段之示意圖。 【主要元件符號說明】 晶圓基板10 基板11 影像感測單元20 濾光片30 濾光片31 透鏡陣列基板40 透鏡41 曲面411 鏡座陣列50 鏡座51201019720 VI. Description of the Invention: · Technical Field of the Invention The present invention provides a camera module and a method of fabricating the same, and more particularly to a wafer level camera module and a method of fabricating the same. [Prior Art] The wafer level camera module mainly combines a lens array having a plurality of lenses for collecting light onto a wafer substrate having a plurality of image sensing units, and then corresponding individual image sensing units. The lens located on it is split from the s-chip substrate. Compared with the traditional camera modules for handheld electronic devices, the wafer-level camera module not only has the advantage of greatly reducing the size, but also uses a semiconductor process for mass production, enabling a single wafer-level camera module. Production costs are significantly lower than traditional camera modules. However, since the lens array is molded, the curvature of the shape is easily changed from the original design to the original design, causing the actual focal length to differ from the design flaw, and since the lens array is in the wafer substrate When the bonding thickness is not easy to control, the variation in thickness will occur, which will cause the distance between each lens and the corresponding image sensing unit to change, resulting in the modulation transfer function (MTF) not reaching a predetermined value and causing the resolution to decrease. . SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a wafer level camera module that can have better resolution. Another object of the present invention is to provide a method for fabricating the above-described wafer level camera module. 201019720 To achieve the above object, the present invention provides a wafer level camera module including a substrate, an image sensing unit, and a A filter, a lens, a mirror mount, and a set of focal lengths. The image sensing unit is formed on the substrate. The filter is disposed on the image sensing unit. The lens is disposed on the filter. The lens holder is disposed on the lens, and the lens holder defines a channel that exposes the lens therebelow. The fixed focus lens group is disposed in the channel of the lens holder and a focus of the fixed focus lens group is located on the image sensing unit. In addition, the present invention further provides a method for fabricating the above wafer level camera module, comprising the steps of: first providing a wafer substrate having a plurality of image sensing units adjacent to each other formed on an upper surface thereof; Next, a filter is disposed on the wafer substrate and covers the image sensing units, and then a lens array substrate is disposed on the filter, the lens array substrate has a plurality of adjacent ones and correspondingly located therein a lens above the image sensing unit, and then an array of lens holders on the lens array substrate. The lens holder array has a plurality of lens holders adjacent to each other and corresponding to the lenses, each of the lens holders defining a lens holder Exposing the channel of the lens under the lens, and separating the image sensing unit and a portion of the filter, the lens, and the lens cover from the structure from the above structure; finally, respectively, a plurality of fixed focus The mirror sets are placed in the channels of the mirror mounts and the distance of each of the sets relative to each of the lenses is adjusted. By setting the lens holder on the lens, the fixed focus lens assembly / internal ' can make the fixed focus mirror (4) adjust the optimal position relative to the shadow (four) measuring unit & wafer level of the invention The optical performance of the camera module is optimal. 201019720 [Embodiment] The technical content of the present invention will be clearly explained in the following preferred embodiments with reference to the following drawings: As shown in the first and second figures, In a first preferred embodiment of the wafer level camera module of the present invention, the wafer level camera module includes a substrate 11 and an image sensing unit 20 formed on the substrate 11, and the image sensing unit 20 is disposed on the image sensing unit. The filter 31 on the unit 20, a lens 41 disposed on the filter 31, a lens holder 51 disposed on the lens 41, and a fixed focus lens group 60 disposed in the lens holder 51 . The substrate 11 is a germanium substrate. The image sensing unit 2 is formed on the upper surface of the substrate 11 by a semiconductor process. The image sensing unit 2 is a charge coupled sensing element or a complementary MOS semi-sense element. The lower surface of the substrate is further formed with a plurality of interfaces (not shown) and a plurality of inner leads respectively extending from the pads through the substrate U to be electrically connected to the image sensing units 2 ( The figure is not shown). The filter 31 includes a filter body and an anti-reflection film layer disposed on the filter body. The filter body is an infrared filter or a low pass filter for infrared light to pass through. Moreover, the filter body can be made of glass or plastic. The lens 41 is made of a semiconductor process having a curved surface 411 for refracting light. In this embodiment, the curved surface 411 is a convex surface, and the actual implementation is not limited thereto. The mirror mount 51 defines a passage 5U that exposes the lens 41 below it. The fixed focus lens set 60 is disposed in the channel 511 of the lens holder μ, and one of the focal points of the 201019720 fixed focus lens set 60 is located above the image sensing unit. ★Hai Ding Mirror set 60 contains a lens or a combination of most lenses. As shown in the second figure, the second preferred embodiment of the wafer level camera module of the present invention is substantially the same as the first preferred embodiment except that the seat 51 and the lens 41 are integrally formed. . The crystal SJ-class phase dragon group of the invention can be manufactured in a mobile phone camera module, a camera module of a note-taking computer, a camera module of a network camera, and a camera module of the camera. Φ 卩 说明 illustrates the manufacturing method of the wafer level camera module of the present invention. As shown in the fourth figure, the method comprises the following steps: First, step 100, as shown in FIG. 5, provides a wafer substrate 1 The upper surface of the wafer substrate ίο is formed with the image sensing units 20 adjacent to each other by a semiconductor process. In addition, a plurality of pads (not shown) are formed on the lower surface of the wafer substrate, and a plurality of sounds are respectively extended upwardly through the wafer substrate 10 to sense the military elements. 2〇The inner lead of the electric connection (not shown). ▲ Next, in step 200', as shown in the sixth figure, a phosphor sheet is disposed on the wafer substrate 10 and covers the image sensing units 2''. Then, in step 300', as shown in the seventh figure, a lens array substrate 40 is disposed on the light-receiving sheet 30. The lens array substrate 4 has a plurality of adjacent ones and correspondingly located above the image sensing units. Lens 41. Next, in step 400, as shown in the eighth figure, a lens array is disposed on the lens array substrate 40. The lens holder array has a plurality of lens holders 51 adjacent to each other and corresponding to the lenses 41. Each of the mirror mounts 51 defines a passage 511 of the lens 41 below which 6 201019720 is exposed. In addition, as shown in FIG. 9 , in step 5, a portion of the substrate u of each of the image sensing units 2G and a portion of the light that is overlaid on the continuous image sensing unit MG are formed from the above structure. The sheet 31, the transparent _, and the mirror base 51 are divided. Finally, in step _, a plurality of fixed focus lens groups 60 are respectively placed in the channels 511 π ' of the mirror blocks 51 and the distances of the respective alignment groups (4) for each of the through holes are adjusted, that is, as shown in the tenth figure. The wafer module of the present invention is shown. In addition, as shown in FIG. 3, the lens holder 51 and the lens 41 are integrally formed wafer level camera modules, and the lens holder array 5 is provided in the above-mentioned steps and steps. And the lens array substrate milk is disposed on the filter 30, and the remaining steps are the same as those of the above-described manufacturing method shown in the fourth figure. In summary, the present invention provides the lens holder 51 on the lens 41, and the fixed focus lens group 60 is disposed therein, so that the fixed focus lens group can be easily opposed to the image sensing unit 20 Adjusting to the optimal position to optimize the optical performance of the wafer level camera module of the present invention does achieve the efficacy of the present invention. The above is only the preferred embodiment of the present invention and is not intended to limit the scope of the present invention. Equivalent changes and modifications made in accordance with the scope of the present invention remain within the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is an exploded view of a first preferred embodiment of a wafer level camera module of the present invention. 201019720 The second figure is a cross-sectional view of a first preferred embodiment of a wafer level camera module of the present invention. The third figure is a cross-sectional view of a second preferred embodiment of the wafer level camera module of the present invention. The fourth figure is a flow chart of a method for fabricating a wafer level camera module of the present invention. The fifth to tenth drawings are schematic views of various stages of the fabrication method of the wafer level camera module of the present invention. [Description of main component symbols] Wafer substrate 10 Substrate 11 Image sensing unit 20 Filter 30 Filter 31 Lens array substrate 40 Lens 41 Curved surface 411 Mirror array 50 Mirror holder 51
通道511 定焦鏡組60 步驟100〜600 8Channel 511 fixed focus lens set 60 Steps 100~600 8