200952214 九、發明說明： 【發明所屬之技術領域】 本發明為關於表面黏著型電子零件的結構技術，尤指以獨特金 屬支架構造做為基礎的薄型發光二極體及其線架結構。 【先前技術】 為了能控制薄型發光二極體(SMD LED)，在實施時所呈現的光 ❹照角度’ 一般而言會在薄型發光二極體上設置透鏡(又稱：光罩、透 光蓋…等等）’以使薄型發光二極體能散發出聚光或廣角照射的效 果，或者，可於薄型發光二極體製造時的封裝階段，直接令封裝體 呈現具有透鏡效果的造型，而免除了透鏡的設置。 然而，在控制薄型發光二極體光照角度的過程中，除了對透鏡 或封裝體所呈現的曲度進行控制外，最重要的就是控制光源產生^ 位置，以使產生的光源能與透鏡或封裝體的曲度配合，才能令光照 © 航符合預_結果’而晶片架·高度，健接影響了光源焦距， 一般而言，當⑼架設_高時，晶片所產生的統較不會朝四周 散射，也因此能產生較集中的光源(光照角度較小、有效照射距雜 遠）。 為了使晶片能夠被架高以呈現出期望的光照角度 設計出結構複_金屬支架結構，並且必須在標準的製造過程中增 加許多工序’以使晶片能被架設在較高的位置，例如： 國内專利公報所刊載公告編號第彻45號「可表面安裝之發光 5 200952214 ’二極體封裝體」所示’係以特製元件辭段，來產生供晶片架高的 二構’其只細時係先預留一腔穴，再於腔穴中另外巍入一具高度較 间的散熱體以使晶片能夠被架設在較高的位置，類似種習知技術 手段由於在製造過程中，必須增加預留腔穴、預製散熱體、置入散 熱體、固定散熱體·.·等工序，因此不但容易降低產品的良率，也增 加了許多的製造成本。 此外’國内專利公報所刊載證書號數黯9〇26「表面黏著型發 ❹光二極體基座」所示’係運用多層次結堆疊的手段，來產生供晶片 架高的結構’此種多層次結堆疊的手段在實施上會雜許多的金屬 基板’且還必須增加沖顯組合對位物外功，也料造成產品 良率降低及增加製造成本的問題。 有鑑於此’創作人係以一種能令晶片架設在最佳高度位置的金 屬支架構造做為基礎，使其具有單純不需組裝、拼裝的結構，以運 用於_發光二極體及其線架，使_發光二極體能呈現出最佳的 【發明内容】 本發明之主要目的，係在提供薄型發光二極體之晶片架設技 術為達上述目的，本發明係提供一種薄型發光二極體的製造方法， 以於過程中產生獨特的金屬支架構造，並以該金屬支架構造做為義 礎’而運用於薄型發光二極體及其線架結構。 薄型發光一極體的製造方法，包含下列步驟： 200952214 (A)金屬鈑片生成：賴—具薄片狀的金屬鈑罐帶）’並令金屬鈑 片的底面形成若平行排列的下凸塊。 ⑼沖壓金屬支架：以沖壓手段在金屬鈑片上沖出多個整齊排列的金 屬支架，'7每一金屬支架具有一晶片承載部、複數個與晶片承裁 部周緣鱗隔關距的導電端子，該晶#承载部位於凸塊上，厚 度大於導電端子，且其底部具有沖壓而成的穴槽、頂部具有一於 穴槽成型時向上推擠而出以供晶片架設的上凸部；據此，即可透 ❹ 過曰曰片八槽成型的手段’來直接增加、控制晶片承載部頂端的高 度。 (c)線架成型.以射出成型方式在每—金屬支紅設置—碗狀基座， 且於aa片承載部及導電端子的頂面形成—碗狀容置空間，並令晶 片承載底面與穴槽裸露於碗狀基座底面，且以沖麼方式在導線 端子的末端形成階狀造型，使轉端子末端底面與晶片承載部底 面位於同一基準面上。 -200952214 IX. Description of the Invention: [Technical Field] The present invention relates to a structural technique of a surface-adhesive electronic component, and more particularly to a thin-type light-emitting diode based on a unique metal stent structure and a wire frame structure thereof. [Prior Art] In order to control the thin-type light-emitting diode (SMD LED), the aperture angle of the light-emitting diode is generally set on the thin-type light-emitting diode (also called: photomask, light transmission). Cover...etc.) so that the thin-type light-emitting diode can emit the effect of concentrating or wide-angle illumination, or the package can be directly formed into a lens-like shape during the packaging stage of the manufacture of the thin-type light-emitting diode. Eliminate the lens settings. However, in controlling the illumination angle of the thin light-emitting diode, in addition to controlling the curvature exhibited by the lens or the package, the most important thing is to control the position of the light source to enable the generated light source to be coupled with the lens or package. The curvature of the body can make the light source conform to the pre-results' and the wafer rack height and the impact affect the focal length of the light source. Generally speaking, when (9) is set to _ high, the wafer will not be uniformly distributed. Scattering, therefore, can produce a more concentrated source (small illumination angle, effective illumination distance). In order to enable the wafer to be elevated to exhibit the desired illumination angle, a structural composite-metal stent structure is designed, and many processes must be added during the standard manufacturing process to enable the wafer to be mounted at a higher position, for example: In the internal patent publication, No. 45, "Surface Mountable Luminous 5 200952214 'Diode Package" is shown as a special component, to create a two-piece structure for the wafer holder. A cavity is reserved first, and a higher heat sink is further inserted into the cavity to enable the wafer to be mounted at a higher position. Similar techniques are required because of the increase in the manufacturing process. The process of preserving the cavity, prefabricating heat sink, placing the heat sink, fixing the heat sink, etc., not only reduces the yield of the product, but also increases the manufacturing cost. In addition, the 'National Patent Gazette's certificate number 黯9〇26 “Surface-adhesive hair-emitting diode base” shows the use of multi-layered junction stacking to create a structure for wafer holders. The method of multi-layered junction stacking may be complicated by a large number of metal substrates', and it is also necessary to increase the external work of the combined counter-alignment material, which also causes a problem of lowering the yield of the product and increasing the manufacturing cost. In view of the fact that the 'creator' is based on a metal bracket structure that allows the wafer to be placed at the optimum height position, so that it has a structure that does not need to be assembled and assembled, and is applied to the light-emitting diode and its wire frame. Therefore, the main purpose of the present invention is to provide a thin light-emitting diode wafer erection technology for the above purpose, and the present invention provides a thin light-emitting diode. The manufacturing method is to produce a unique metal stent structure in the process, and the thin metal light-emitting diode and its wire frame structure are used as the basis of the metal stent structure. The method for manufacturing a thin-type light-emitting body includes the following steps: 200952214 (A) metal ruthenium sheet formation: ray-sheet-shaped metal enamel belt) and the bottom surface of the metal ruthenium is formed as a lower bump which is arranged in parallel. (9) Stamped metal bracket: a plurality of neatly arranged metal brackets are punched on the metal slab by means of punching, '7 each metal bracket has a wafer carrying portion, and a plurality of conductive terminals spaced apart from the circumference of the wafer receiving portion. The crystal# bearing portion is located on the bump, has a thickness larger than the conductive terminal, and has a punched groove at the bottom thereof, and the top portion has an upper convex portion that is pushed upward to form the wafer when the cavity is formed; The height of the top end of the wafer carrier can be directly increased and controlled by the means of forming the eight-slot of the cymbal. (c) Wire frame forming. In the injection molding method, a bowl-shaped base is provided in each of the metal red, and a bowl-shaped receiving space is formed on the top surface of the aa sheet bearing portion and the conductive terminal, and the wafer bears the bottom surface and The cavity is exposed on the bottom surface of the bowl base, and a stepped shape is formed at the end of the wire terminal in a punching manner, so that the bottom surface of the terminal end of the terminal is located on the same reference surface as the bottom surface of the wafer carrier. -
(D) 固晶·將晶片設置於晶片承载部的上凸部上。 (E) 打線.將導線連接於晶片與導電端子之間。 (觸裝··在碗狀容置空財注人_體，謂前述晶片及導線封 裝’即可於金屬鈑月上形成多個整齊排列的薄型發光二極體。 ⑹切斷··將薄型發光二極體的周緣(金屬支架糊自金屬飯片上切 斷分離，即可獲得薄型發光二極體的完成品。 200952214 出成型時填充的貫孔，以使碗狀基座可以對金屬支架上上的晶片承 載部及導f端子產生更良好的包妓位效果；再者，該碗狀基座可 具有一環設於上凸部周緣的遮罩體，以使晶片所產生的光源更為集 中。 相較於先前技術，本發明令晶片承載部之底部具有沖壓而成的 穴槽，透過沖壓穴槽的技術’來簡化製造卫序、降低產業成本，並 且還能以控制穴槽沖壓深度的手段來改變上凸部的凸伸高度，以控 ❹制晶片之架設高度’除此之外’晶片承載部與晶片之間電熱分離， 其八槽還能增加晶片承載部底面的導熱面積，以使導熱效果獲得提 升’以利產業發展。 【實施方式】 以下依據本發日$之技術手段，列舉適於本發明之實施方式，並 配合圖面說明如後： 第-圖係本發明最佳實施_型發光二極體之製造方法示意 圖匕s下列步驟.金屬鈑片生成⑻、沖壓金屬支架⑼、線架成 型（c)、固晶（φ、打線⑻、封裝②、以及切斷⑻，以獲得薄型 發光二極體之完成品。 «月參閱第-圖及第二圖，其中第二圖係本發明最佳實施例之金 片°〗視示圖，在製造薄型發光二極體時，係先進行金屬鈑片 1〇0生成⑻步驟，預製—具籼狀的金屬鈑片，並令金屬鈑片 100的底面形成若平行排列的下凸塊101。 8 200952214 "月 > 閱第-圖及第二圖、第四圖所示，其中第三圖及第四圖係 本發月最佳μ施例之金屬支架平賴、局部立體示賴，沖壓金屬 支架步驟(b)係以沖壓手段在金屬鈑片1〇〇上沖出多個整齊排列的金 屬支架10以及複數個位於金屬鈑片⑽兩側的對位孔。 母—金屬核1G具有—晶片承载部U、以及複數個與晶片承 載部11周緣_隔關距的導電軒u，該晶片承德u位於凸 鬼101上’厚度大於導電端子12,且其底部具有沖壓而成的穴槽13、 頁P/、有於八槽13成型時向上推擠而出以供晶片架設的上凸部 14。 ❸閱第圖、第五及第六圖所示，其中第五圖及第六圖係本 發明最佳實_之_平_、局粒體示意圖。 線架成型步驟⑼係以射出成型手段在每一金屬支架1〇上設置 一雜基座20 ’並於晶片承_ n及導電端子12的頂面形成一碗 狀谷置:間。所述之晶片承載u部底面與穴槽U裸露(可參後揭第 七圖所示）於碗狀基座20底面，並以沖壓方式令導線端子12的末 端形成階狀造型，使導線端子12末端底面與晶片承載部u底面位 於同一基準面上。 第-圖及第七®所示，其中第七_本發明最佳實施例之薄型 發光二極體剖視圖，待線架成型步驟(c)完成後即可如將晶片％設置 於晶片承綱11壯凸部14上料顧晶步_)，·讀再利用導 線4〇連接於晶片30與導電端子12間，以完成打線步驟⑻，於打線 步驟⑻完成後即可在碗狀容置空間中注入封裝體％，以將前述晶片 9 200952214 3〇及導線40封裝’即完成封裂步驟(f)，以於金屬鈑片上形成 多個整齊排__紋二極體，此時再進行切斷步驟⑻ ’將每一 薄型發光二極體的周緣(金屬支架外緣)自金屬飯片 100上切斷分 離，即可獲得薄型發光二極體的完成品。 值付-提的是，上述步驟巾，固晶步驟_⑼3G係以電氣 隔離方式設置於晶片承載部u後，翻肋線步驟(e)將晶片30 ”導A端子12電氣連接’使晶片3G與晶片承載部11電氣隔離但仍 可料，即所謂「電齡離」，缺有_料雜，並且延長 晶片3〇的使用壽命。 凊參閱第七圖及第八圖所示，其巾第八_為本發明最佳實施 例之薄型發光二極體底面示意圖，藉由上述製程完成後的薄型發光 -極體’由於晶片承載部n之底部具有沖壓而成的穴槽13，透過 沖壓穴槽I3的技術’可在簡單的製造玉序下直獅成上凸部14， ❾以大幅增加晶片承載部n頂面的高度。其次，該碗狀基座2〇具有 一喊於上凸部周緣的遮罩體21，以使晶片所產生的光源更為集 中。 除此之外，還能以控制穴槽13沖壓深度的手段來改變上凸部 14的凸伸高度，以控制晶片之架設高度，而且穴槽13還能增加晶 片承载部底面的導熱面積及通風效果，以使導熱效果獲得提升。實 細時，更可在六槽13内填充導熱、散熱材料，例如：銅、銀、鋁、 散熱膏、以及陶瓷鋁板、氮化鋁等複合材料，當晶片3〇發光時，其 廢熱可由晶片承載部11、穴槽13以及導熱、散熱材料向外傳導， 200952214 以增加整體散熱效果。 赫閱第四圓及第八圖所示，本發明最佳實施例係在晶片承載 11部底部側邊賴有供碗狀基座20射出成型時填充的凹階部15、 亦在導電端子12上設置供碗狀基座2G射域帅真充的貫孔^， ； 碰碗狀基座20可於金屬支架10上產生更良好的包夾定位效果。 惟’以上之實施制及_所示，係本發曝佳實施例者，並 非以此侷限本發明。是以，舉凡與本發明之構造、妓、特徵等近 ❹似或相雷’，均蘭本發明之触目的及中料概圍之内。 200952214 【圖式簡單說明】 第一圖：本發明最佳實施例薄型發光二極體之製造方法示意圖 第二圖：本發明最佳實施例之金屬鈑片剖视示意圖。 第三圖：本發明最佳實施例之金屬支架平面圖。 • 第四圖：本發明最佳實施例之金屬支架局部立體示意圖。 Η 第五圖：本發明最佳實施例之線架平面圖。 第六圖·本發明最佳實施例之線架局部立體示意圖。 ❹第七圖：本發明最佳實施例之薄型發光二極體剖視圖。 第八圖：本發明最佳實施例之薄型發光二極體底面示意圖。 【主要元件符號說明】 100 金屬鈑片 16 貫孔 101 凸塊 20 碗狀基座 10 金屬支架 21 遮罩體 11 晶片承載部 30 晶片 12 導電端子 40 導線 13 穴槽 50 封裝體 14 上凸部 60 對位孔 15 凹階部 12(D) Solid crystal · The wafer is placed on the upper convex portion of the wafer carrying portion. (E) Wire bonding. Connect the wire between the wafer and the conductive terminal. (Touching ······························································································· The periphery of the light-emitting diode (the metal stent paste is cut off from the metal rice sheet to obtain a finished product of the thin light-emitting diode. 200952214 The through-hole is filled during molding so that the bowl-shaped base can be placed on the metal bracket The upper wafer carrying portion and the guiding f terminal have a better packing effect; further, the bowl base can have a mask disposed on the periphery of the upper convex portion to concentrate the light source generated by the wafer. Compared with the prior art, the present invention has a punched groove at the bottom of the wafer bearing portion, which simplifies the manufacturing process, reduces the industrial cost through the technique of punching the groove, and can also control the punching depth of the groove. Means for changing the protrusion height of the upper convex portion to control the mounting height of the wafer to be 'other than' the electrothermal separation between the wafer carrier and the wafer, and the eight grooves can also increase the heat conduction area of the bottom surface of the wafer carrier portion, Make heat effect If the improvement is made in order to facilitate the development of the industry. [Embodiment] Hereinafter, embodiments suitable for the present invention will be listed according to the technical means of the present invention, and the following description will be given in conjunction with the drawings: Schematic diagram of the manufacturing method of the light-emitting diode 匕s the following steps: metal ruthenium production (8), stamped metal support (9), wire frame forming (c), solid crystal (φ, wire (8), package 2, and cut (8) to obtain The finished product of the thin light-emitting diode. «Monthly refers to the first and second figures, wherein the second figure is the gold piece of the preferred embodiment of the present invention, and is used in the manufacture of a thin light-emitting diode. First, the metal ruthenium 1 〇 0 generation (8) step is prefabricated to form a ruthenium metal ruthenium, and the bottom surface of the metal ruthenium 100 is formed as a parallel arrangement of the lower bumps 101. 8 200952214 "月> The figure and the second figure and the fourth figure show that the third figure and the fourth figure are the metal brackets of the best μ example of the present month, and the partial three-dimensional representation, the step of stamping the metal brackets (b) is stamping Means rushing out multiple neatly arranged gold on the metal cymbal 1 The support 10 and a plurality of alignment holes on both sides of the metal raft (10). The mother-metal core 1G has a wafer carrier U, and a plurality of conductive yokes spaced apart from the periphery of the wafer carrier 11 u is located on the ghost 101 and has a thickness greater than the conductive terminal 12, and has a punched groove 13 at the bottom thereof, a page P/, and an upper convex portion 14 which is pushed upward to form the wafer when the eight grooves 13 are formed. Referring to the figures, fifth and sixth figures, the fifth and sixth figures are the best embodiment of the present invention, and the granules are schematic. The wire frame forming step (9) is by injection molding. A metal base 20' is disposed on each of the metal brackets 1'', and a bowl-shaped valley is formed on the top surface of the wafer carrier and the conductive terminals 12. The wafer carries the bottom surface of the u portion and the cavity U is exposed. (Refer to the seventh figure shown in the seventh figure) on the bottom surface of the bowl base 20, and the end of the wire terminal 12 is stepped in a stamping manner so that the bottom end surface of the wire terminal 12 and the bottom surface of the wafer carrier portion u are on the same reference surface. on. Illustrated in the first and seventh, wherein the seventh embodiment of the thin-type light-emitting diode of the preferred embodiment of the present invention, after the wire frame forming step (c) is completed, the wafer % can be set to the wafer frame 11 The strong convex portion 14 is fed with a step _), and the read re-use wire 4 is connected between the wafer 30 and the conductive terminal 12 to complete the wire bonding step (8). After the wire bonding step (8) is completed, the hole can be placed in the bowl-shaped accommodation space. Injecting the package body % to package the wafer 9 200952214 3〇 and the wire 40 to complete the sealing step (f) to form a plurality of neat rows of __ pattern diodes on the metal raft, and then cut off Step (8) 'The periphery of each thin-type light-emitting diode (outer edge of the metal holder) is cut off from the metal rice sheet 100 to obtain a finished product of the thin light-emitting diode. It is to be noted that, in the above step, the solid crystal step _(9) 3G is disposed in the electrical isolation manner on the wafer carrier portion u, and the rib line step (e) electrically connects the wafer 30 "the A terminal 12" to the wafer 3G. It is electrically isolated from the wafer carrier 11 but still available, so-called "electric age separation", which is lacking in material and prolongs the service life of the wafer. Referring to the seventh and eighth figures, the eighth embodiment of the invention is a schematic view of the bottom surface of the thin-type light-emitting diode according to the preferred embodiment of the present invention, and the thin-type light-emitting body after the completion of the above process is due to the wafer carrying portion. The bottom of the n has a punched groove 13 through which the technique of punching the groove I3 can be used to form the upper convex portion 14 under the simple manufacturing of the lion to greatly increase the height of the top surface of the wafer carrier n. Next, the bowl-shaped base 2 has a mask body 21 shrouded on the periphery of the upper projection to concentrate the light source generated by the wafer. In addition, the protruding height of the upper convex portion 14 can be changed by means of controlling the depth of the groove 13 to control the height of the erection of the wafer, and the cavity 13 can also increase the heat transfer area and ventilation of the bottom surface of the wafer bearing portion. The effect is to improve the thermal conductivity. When it is thin, it can be filled with heat-conducting and heat-dissipating materials in the six slots 13, such as copper, silver, aluminum, heat-dissipating paste, and composite materials such as ceramic aluminum plate and aluminum nitride. When the wafer is illuminated, the waste heat can be obtained from the wafer. The bearing portion 11, the cavity 13 and the heat conduction and heat dissipation materials are conducted outward, 200952214 to increase the overall heat dissipation effect. As shown in the fourth and eighth figures, the preferred embodiment of the present invention is a recessed portion 15 which is filled at the bottom side of the wafer carrying portion 11 for injection molding of the bowl-shaped base 20, and also at the conductive terminal 12. The through hole for the bowl-shaped base 2G is provided, and the bowl-shaped base 20 can produce a better positioning effect on the metal bracket 10. However, the above embodiments and _ are shown to be preferred embodiments of the present invention and are not intended to limit the invention. Therefore, it is within the scope of the touch and the middle material of the present invention, which is similar to or similar to the structure, structure, and features of the present invention. 200952214 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a manufacturing method of a thin LED according to a preferred embodiment of the present invention. FIG. 2 is a cross-sectional view showing a metal crucible according to a preferred embodiment of the present invention. Third Figure: A plan view of a metal stent in accordance with a preferred embodiment of the present invention. • Fourth Figure: A partial perspective view of a metal stent in accordance with a preferred embodiment of the present invention.第五 Fig. 5 is a plan view of the wire frame of the preferred embodiment of the present invention. Figure 6 is a partial perspective view of the wire frame of the preferred embodiment of the present invention. Figure 7 is a cross-sectional view of a thin light emitting diode of the preferred embodiment of the present invention. Figure 8 is a schematic view showing the bottom surface of a thin light-emitting diode according to a preferred embodiment of the present invention. [Description of main components] 100 metal cymbal 16 through hole 101 bump 20 bowl pedestal 10 metal bracket 21 mask body 11 wafer carrier 30 wafer 12 conductive terminal 40 wire 13 cavity 50 package 14 upper convex portion 60 Alignment hole 15 concave step 12