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TW200943554A - Method of achieving linear capacitance in symmetrical and asymmetrical EMI filters with TVS - Google Patents

Method of achieving linear capacitance in symmetrical and asymmetrical EMI filters with TVS

Info

Publication number
TW200943554A
TW200943554A TW98101483A TW98101483A TW200943554A TW 200943554 A TW200943554 A TW 200943554A TW 98101483 A TW98101483 A TW 98101483A TW 98101483 A TW98101483 A TW 98101483A TW 200943554 A TW200943554 A TW 200943554A
Authority
TW
Taiwan
Prior art keywords
tvs
semiconductor substrate
asymmetrical
symmetrical
emi
Prior art date
Application number
TW98101483A
Other languages
Chinese (zh)
Other versions
TWI379419B (en
Inventor
Moses Ho
Madhur Bobde
Mike Chang
Li-Min Weng
Original Assignee
Alpha & Omega Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/080,104 external-priority patent/US7863995B2/en
Application filed by Alpha & Omega Semiconductor Ltd filed Critical Alpha & Omega Semiconductor Ltd
Publication of TW200943554A publication Critical patent/TW200943554A/en
Application granted granted Critical
Publication of TWI379419B publication Critical patent/TWI379419B/en

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  • Semiconductor Integrated Circuits (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

A transient voltage suppressing (TVS) circuit with unidirectional blocking and symmetric bi-directional blocking capabilities integrated with an electromagnetic interference (EMI) filter supported on a semiconductor substrate of a first conductivity type. The TVS circuit integrated with the EMI filter further includes a ground terminal disposed on the surface foe the symmetric bi-directional blocking structure and at the bottom of the semiconductor substrate foe the unidirectional blocking structure and a Zener diode and a plurality of capacitors disposed in the semiconductor substrate to couple the ground terminal to the input and output terminals with a direct capacitive coupling without an intermediate floating body region.
TW98101483A 2008-04-01 2009-01-16 Methods of achieving linear capacitance in symmetrical and asymmetrical emi filters with tvs TWI379419B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/080,104 US7863995B2 (en) 2007-06-16 2008-04-01 Methods of achieving linear capacitance in symmetrical and asymmetrical EMI filters with TVS

Publications (2)

Publication Number Publication Date
TW200943554A true TW200943554A (en) 2009-10-16
TWI379419B TWI379419B (en) 2012-12-11

Family

ID=41156380

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98101483A TWI379419B (en) 2008-04-01 2009-01-16 Methods of achieving linear capacitance in symmetrical and asymmetrical emi filters with tvs

Country Status (2)

Country Link
CN (1) CN101552272B (en)
TW (1) TWI379419B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI473248B (en) * 2011-09-20 2015-02-11 Alpha & Omega Semiconductor Semiconductor chip combined with high and low voltage components
TWI726515B (en) * 2019-12-04 2021-05-01 台灣茂矽電子股份有限公司 Transient-voltage-suppression diode structure and manufacturing method thereof

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101667817B (en) * 2009-10-09 2012-12-12 华为终端有限公司 Method for inhibiting electromagnetic interference and electromagnetic interference filter
CN102333267A (en) * 2011-06-29 2012-01-25 惠州Tcl移动通信有限公司 Mobile phone and microphone circuit thereof
US10363425B2 (en) * 2015-06-01 2019-07-30 Avx Corporation Discrete cofired feedthrough filter for medical implanted devices
CN106252226A (en) * 2016-10-17 2016-12-21 上海先进半导体制造股份有限公司 The manufacture method of TVS pipe
CN111418061B (en) * 2017-11-29 2024-03-19 德州仪器公司 Single capacitor used as RC filter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI473248B (en) * 2011-09-20 2015-02-11 Alpha & Omega Semiconductor Semiconductor chip combined with high and low voltage components
TWI726515B (en) * 2019-12-04 2021-05-01 台灣茂矽電子股份有限公司 Transient-voltage-suppression diode structure and manufacturing method thereof
US11018265B1 (en) 2019-12-04 2021-05-25 Mosel Vitelic Inc. Transient-voltage-suppression diode structure and manufacturing method thereof

Also Published As

Publication number Publication date
CN101552272A (en) 2009-10-07
TWI379419B (en) 2012-12-11
CN101552272B (en) 2011-01-19

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