200941612 九、發明說明： 【發明所屬之技術領域】 關於用 本發明關於半導體工件的處理，更具體地說 於處理單片半導體工件的溶液製備設備和方法。 【先前技術】 半導體器件是在半導體卫件上使用多個不同的處理 ❹ 步驟進行製造和生産，從而製造 “電曰曰體和互連元件。在形 件的過程中，半導體工件可能經過例如：掩膜， =和沈積等處理’從而形成半導體電晶艘和所需要的電 子電路，來連接這些電晶體終端。具體而t，可執行多次 掩膜、離子植人、退火和等離子㈣、以及化學和物理氣 相沈積步驟來形成窄溝槽、電晶㈣、柵極、多晶砍線路 和互連線路結構。在每個步驟中，顆粒和污染物都可能被 添加到工件的正面和背面。這些顆粒和污染物可導致在工 件表面産生缺陷從而降低積體電路元件的良率。由此在 微電子器件製造過程中’需採用多種預清洗與後清洗’表 面二理和表面修整等步驟。這些步驟中嘯多涉及到液相 化學藥品，因此，他們通常被稱作“濕法清洗”。 <傳統上，濕'、法清洗工藝採用批式處理一濕法清洗槽 3又備能連續地在多個的清洗槽中同步處理一批工件（—般 爲25個工件）。在兩個清洗槽之間，需將處理過的—抵工 2沖洗乾淨以去除所有來自於前一個清洗槽的殘餘清2 溶液。在一濕法清洗槽設備中，工件在處理過程中保持靜 200941612 止，在工件的空隙之間的清洗溶液的流動速率相對較低， • 因此清洗效率尤其是對於小顆粒的清洗效率會因水流的 、 原因而受到限制。由於一批工件在每個清洗槽的停留時間 要求都是不同的，並且下一批工件需等到對上一批工件的 操作完成後才能被傳送到下一個清洗槽，因此，難以控制 將批工件從一個清洗槽轉移到另一個清洗槽的等待時 間所以，較向的處理偏差也在所難免。更進一步來說， ❹對同一批工件的處理過程，由於所有同一批的工件都與同 一種液體接觸，兩個工件之間的交叉污染是批式處理所固 有的。隨著工件尺寸增大到300mm，而其製造技術節點提 高至65nm或者更小，傳統的濕法清洗槽的方法不再能有 效和可靠地從工件上清除顆粒和污染物。 單工件清洗工藝已經成爲工件清洗的一種選擇。單工 件清洗設備一次僅在一個清洗反應腔（稱作處理腔）内處 理片工件’依次在其表面注入多種清洗溶液並且在不同 φ 清洗溶液的使用間隔以去離子水沖洗。採用單一工件處理 設備有利於精準地控制工件旋轉（因此有利於精準地控制 清洗溶液相對基體的流速）和清洗溶液喷灑的時間，並完 全消除工件之間的交又污染。爲了提高産量，單工件清洗 δ又備通常由多個處理腔組成。商業用的系統可裝配1 2個 處理腔。 一單工件濕法清洗系統通常具有多個中央化學溶液 製備子系統，以配製多種化學試劑。中央子系統中的某一 種化學溶液由子系統分支出的流體控制管路注入分隔的 200941612 處理腔中。 單工件濕法清洗工藝面臨的一個主要挑戰是，處理設 備需爲所有處理腔内的工件提供一致的工藝條件。這是由200941612 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a process for preparing a semiconductor workpiece, and more particularly to a solution preparation apparatus and method for processing a single-piece semiconductor workpiece. [Prior Art] A semiconductor device is manufactured and produced by using a plurality of different processing steps on a semiconductor device to manufacture an "electric body and an interconnection member. In the process of a shape, a semiconductor workpiece may pass through, for example: Mask, = and deposition, etc. to form a semiconductor cell and the required electronic circuitry to connect these transistor terminals. Specifically, multiple masks, ion implantation, annealing, and plasma (4) can be performed, Chemical and physical vapor deposition steps to form narrow trenches, electro-crystals (tetra), gates, polysilicon cut lines, and interconnect structures. In each step, particles and contaminants may be added to the front and back of the workpiece. These particles and contaminants can cause defects on the surface of the workpiece and reduce the yield of the integrated circuit components. Thus, various pre-cleaning and post-cleaning surfaces are required in the manufacturing process of the microelectronic device. Most of these steps involve liquid phase chemicals, so they are often referred to as "wet cleaning." <Traditionally, wet', qingqing The process uses a batch process, a wet cleaning tank 3, and is capable of continuously processing a batch of workpieces (generally 25 workpieces) in a plurality of cleaning tanks. Between the two cleaning tanks, the treated - Respond 2 is rinsed to remove all residual clear solution from the previous cleaning tank. In a wet cleaning tank, the workpiece remains static during the process of 200941612, and the cleaning solution between the gaps of the workpiece The flow rate is relatively low, so the cleaning efficiency, especially for small particles, is limited by the flow of water. Because the residence time requirements of a batch of workpieces in each cleaning tank are different, and the next batch The workpiece has to wait until the operation of the previous batch of workpieces is completed before being transferred to the next cleaning tank. Therefore, it is difficult to control the waiting time for transferring the batch workpiece from one cleaning tank to another, so the processing deviation is also relatively large. Inevitably. Further, the processing of the same batch of workpieces, because all the same batch of workpieces are in contact with the same liquid, between the two workpieces Cross-contamination is inherent in batch processing. As workpiece sizes increase to 300 mm and their manufacturing technology nodes increase to 65 nm or less, conventional wet cleaning bath methods no longer effectively and reliably remove from the workpiece. Particles and contaminants. The single-piece cleaning process has become an option for workpiece cleaning. A single-piece cleaning device treats a piece of workpiece in only one cleaning reaction chamber (called a processing chamber) at a time, injecting multiple cleaning solutions on its surface and in different The use interval of φ cleaning solution is flushed with deionized water. The use of a single workpiece processing device facilitates precise control of workpiece rotation (thus facilitating precise control of the flow rate of the cleaning solution relative to the substrate) and the time of cleaning solution spraying, and completely eliminates the workpiece. In order to increase the yield, the single workpiece cleaning δ is usually composed of a plurality of processing chambers. The commercial system can be equipped with 12 processing chambers. A single workpiece wet cleaning system typically has multiple central chemical solution preparation subsystems to formulate a variety of chemical reagents. A chemical solution in the central subsystem is injected into the separate 200941612 processing chamber by a fluid control line branched from the subsystem. A major challenge in the single-piece wet cleaning process is that the processing equipment provides consistent process conditions for the workpieces in all processing chambers. This is by
、：件上工作單元的最終性能和良率很大程度上依賴於 2¾ —工藝條件。砭些工藝條件包括但不僅限於：化學溶液 的濃度，反應性，溫度和活性成分的供給速度。隨著單工 件濕法清洗設備的清洗腔數量大大增加，這個挑戰更加艱 巨。例如，硫酸/雙氧水混合溶液（SPM)通常作爲清除光 刻工藝後的光阻殘餘物的清洗溶液，當硫酸和雙氧水混合 時由於發生放熱反應生成卡洛酸，混合溶液的溫度隨時 間而升高。卡洛酸是清除光阻的有效成分，它産生的同時 就開始在混合溶液中分解，分解速率由溫度決定（溫度隨 時間變化）°在72°C下’分解速率約爲每秒Q. 2%，在92^ 下，分解速率約爲每秒〇. 6%。因而，卡洛酸的停留時間 越長，它的有效活動將顯著降低。不同處理腔的溶液輪送 點要達到同樣的工藝條件就要求謹慎的工程設計，並且， 當每個反應腔與中央化學溶液製備子系統的距離和相對 高度不同時’這一點尤其關鍵。 一種可達到這個目標的的方法是，若要求輸送到工件 表面的化學溶液保持新鮮，則以保證此新鮮度來製備清洗 溶液混合物。這種方法通常需要多套精密的流體控制器和 複雜的流過混合裝置，每個清洗腔的每種化學溶液各配— 套。這些精密流體控制器和複雜的流過混合裝置將導致這 σ早工件濕去清洗設備的成本南到I C製造商無法承受。 200941612 如上文所述，由於反應釦，、日人 您和此合中的放熱，使製備的混合溶 液的溫度常常隨時間改蠻。▲ 變因爲适種方法近似於一種暫態 混合和輸送技術，在輸送點可能無法達到期望的工藝二 度，除非在輸送點前端加多套内置於管路的加熱裝置，： 這樣將進一步增加系絲M4·、 、、的成本。另一種方法是化學溶液在 從喷嘴輸送出之後到至工件砉 J王工仵表面之前在一處混合。透過調 整混合點到半導體工件表面的距離，可進行非常有限的時 ❹ 間控制’即控制混合物從混合點至半導體工件表面的傳送 時間。在實際的情況中，這段時間不超過秒的幾分之一。 本發明相對於上述情況進行揭示。 【發明内容】 本發明揭示了 —種用於單片濕法清洗工藝的備有溫 度和活性控制的清洗溶液製備及輸送設備和方法。，皿 本發明的-個實施例中，其設備具有至少一個預執裝 ❿趣匕學溶液預熱到預設溫度，至少一個混合容器混合新 鮮的化學溶液，以及一個連接到喷嘴並將新鮮混合的化學 溶液輸送到使用點的化學溶液輪送管路。混合容器具有多 個化學溶液進口，至少-個液位感測器，-個連接到排ί 口的排氣閥’以及-個將化學溶液吹出至使用點的壓縮氣 體入口。按單工件濕法清洗工藝控制混合容器中之混人容 . 液的量，並在新濕法清洗工藝開始之前的預定時刻士 j内 * 製備新鮮化學溶液。 — 本發明的一個實施例也揭示了 一種化學溶液製備方 8 200941612 e 法。此方法中，化學溶液被引入備有流體控制裝置的混人 容器。此混合容器中的混合工藝從預定時刻u開始二 合化學>谷液在混合容器中停留^_時間’此過程由軟體控 制系統控制。透過控制停留時間t_r，可控制在使用點混 合溶液的溫度和其中活性成分的活性’從而保持最佳的聯 合清洗效果。達到時’透過向混合容器中以預定壓力 吹入壓縮氣體，混合溶液在t_d時間内以一可控的流速傳 送到噴嘴中。氣體吹洗工藝持續t_p時間直至濕法清洗工 藝結束，以便將混合容器和輸送管4中的m有殘餘化學溶 液除去，以保證下一混合溶液完全新鮮。 本發明的一個實施例揭示了一種低成本化學溶液製 備設備，它僅用簡易的流體控制裝置’而沒有在每個化學 溶液喷嘴的輸送管路内置加熱器。此設備也可使在使用點 的新鮮混合溶液溫度可控，清洗效果最佳。此設備也可使 一組半導體工件之間和處理腔之間的使用點新鮮混合溶 液的偏差最小。 【實施方式】 如第1圖所示，本發明的一個實施例中，該設偉具有 一個大量化學溶液預熱裝置1 01將化學溶液預熱到預定 溫度T0_預熱裝置101可以是一循環加熱槽或一管路内 置加熱器，或是其他液體加熱機構。該加熱裝置的材料爲 PVDF，PTFE，PFA或石英。需要使用化學溶液時，大量化 學溶液由軟體控制系統控制的設施輸送到預熱裝置中，預 9 200941612 熱裝置101由化學溶液輸送管路連接到泵1〇2和流體控制 . 裝置103。化學溶液輸送管路至少連接著一條化學溶液輸 、 入& 1〇5，由控制裝置控制溶液輸入管105的壓力。化學 洛液輸入管1 〇 5與混合容器相連，並連有一個流體控制裝 置以控制溶液輸入管105的壓力，從而控制輸送入混合容 器201的溶液流速。化學溶液輸入管1〇5還包含一個由軟 體控制系統控制的閥門，以控制向混合容器2〇〗輸送化學 〇 ㈣的開始或停止。對於不需要預熱的化學隸來說，可 從使用這種特殊化學溶液的設備中移除預熱裝置。 本认備在處理腔214附近有一個混合容器2 〇丨以混合 新鮮的化學溶液，如第2圖所示。混合容器的材料可以是 PFA’ PVDF’ PTFE或；5》。對應於每種化學溶液一個混 σ谷器201連接一個相應的溶液輸入管2〇2和2〇3。每種 化f溶液輸送入混合容器2〇1的流速由相應化學溶液輸 入官路上的流體控制裝置控制，待混合的化學溶液的流速 Φ 比預先設定。化學溶液輸入管路上的流體控制裝置205與 206由軟體控制系統控制’從而保持輸入混合容器201混 σ的化學/奋液用！的比例。在相應處理腔2】4開始濕法清 洗工藝之月ϊι的預a十日寺間t，化學溶液輸入管路2 〇 2和㈤ 的閥門由軟體控制系統打開，將相應化學溶液按預定的比 例輸送入混合容器2〇1中。混合容器2〇1包含至少一個液 . 位感測器207 ’以控制工藝要求的液體混合物的總量。當 - ㈣混合物的液位達到液位感測g 207 i控的位置的同 時’化學溶液輸入管的閥門關閉，停止向混合容器輸送化 10 200941612 學溶液。化學溶液混合物在混合容器中停留t〜r時間，等 * - 待混合容器2 0 1内濕法清洗工藝的化學溶液達到最佳工 . 作效果。該最佳清洗效果由活性反應物的産額與混合溶液 的溫度決定，可透過控制時間t_r而控制。混合容器2〇1 包含一個位於混合容器頂部的壓縮氣體管路209和—個 位於谷器底部附近的化學溶液輸送管’該輸送管與處理腔 214中的喷嘴212相連。當濕法工藝開始時，壓縮氣體以 ❹ 一定壓力由混合容器201頂部的壓縮氣體管路2〇9吹入混 合容器201，從而將新鮮的化學溶液混合物吹入喷嘴 2 1 2，並以一定流速流到處理腔2丨4的單片半導體工件23 表面。流速與處理時間的控制由控制壓縮氣體的吹入壓力 和混合容器内化學溶液混合物總量來達成。當濕法工藝結 束時，壓縮氣體將繼續吹一段時間t_p，將混合容器2〇1 以及混合容器201和處理腔喷嘴212間的溶液輸送管中殘 餘的化學各液混合物完全除去。該後處理氣體吹送使混合 ❹谷器2〇1無殘餘化學溶液，保證了下一次半導體工件213 j法π洗工藝的新鮮化學溶液混合物的混合與輸送。混合 ST二包含—個頂部開/關排氣閥門208，連通設備的 徘氣&。在壓縮葡辦 _ 和化學溶液輸向喷嘴212時，該 閲門2 0 8關閉。、、g人 / D各器包含一個溫度感測器2 11和一個 壓力感測器 . 果心控混合容器中的溫度與壓力。 在本發明的$ _ •❸多向歧管來控妃—個實施例中，以一個備有流體控制閥 控制多向岐管的I混合容器201的化學溶液量。透過 力以及流體控制閥門的設置，可控制輸 11 200941612 入混合容器的化學溶液的流速，從而控制化學溶液混合物 的總董與混合比例。 在本發明的另一個實施例中，以質量流量控制器控制 輸入混合容n 2Q1的化學溶液量。混合比例可由控制輸入 混合容器的化學溶液的質量而精確控制。 Ο 在本發明的另一個實施例中，以計量栗來控制從存儲 :輸送入混合容器⑽化學溶液量。兩種化學溶液的混 :比例與混合溶液總量的控制可透過控制每條化學溶液 路中對應的每個計量泵的衝程來達成。 在本發明的另一個實施例中’揭示了一個製備用於單 :件濕法清洗工藝的化學溶液的方法。該方法包括以下步 a) 生成不同起始溫度下的混入.、交、、在& 曲線； r口冷液的溫度與時間 b) ^洗系統上，以完全虛擬的工序和所期望的處 理-人數，用母種化學溶液混合物處理一組工件，得出在 洗系統的同個處理腔中先後處理兩片工 / 化墨竹、六、β Λ 的間隔内’所述 匕學4液混合物完成輸送到其再次輪 r + .、 义幻攻小間隔時間 U—min) °選擇所有處理腔最小的t_min ; 風c) #期望的化學溶液濃度，使用點的溫度⑴ m送速率⑷’以及要輸送的化學溶液量（q)，來 广 洗工藝確定所述設備的工藝參數。這 括··母種化學溶液加熱容器的溫度T_〇，tj，t ^ “匕 d)在控制軟體中爲所述化學溶液屍合物設定這些 12 200941612 工藝參數。 e)用控制軟體驗證工. ^^ 藝參數。如參數無效，則運行 錯誤，並要求新的輸入參數·， 〇 處理半導體工件； g)所述混合容器的斛、+. 維。 斤返壓力釋放閥門處於打開狀 h) 處理半導體工彳丰& 午的過程中，混合容器的每種化學,: The final performance and yield of the work unit on the part is largely dependent on the process conditions. These process conditions include, but are not limited to, the concentration of the chemical solution, the reactivity, the temperature, and the rate of supply of the active ingredient. This challenge is even more daunting as the number of cleaning chambers for single-piece wet cleaning equipment increases dramatically. For example, a sulfuric acid/hydrogen peroxide mixed solution (SPM) is generally used as a cleaning solution for removing photoresist residue after a photolithography process. When an acid is generated by an exothermic reaction when sulfuric acid and hydrogen peroxide are mixed, the temperature of the mixed solution rises with time. . Caloric acid is an effective component for removing photoresist, and it starts to decompose in the mixed solution at the same time. The decomposition rate is determined by temperature (temperature changes with time). At 72 ° C, the decomposition rate is about Q. 2 per second. %, at 92^, the decomposition rate is about 6% per second. Thus, the longer the residence time of the caroic acid, the less effective its activity will be. The careful transfer of the solution transfer points of the different processing chambers to the same process conditions requires careful engineering and is especially critical when the distance and relative height of each reaction chamber from the central chemical solution preparation subsystem are different. One way to achieve this is to prepare a cleaning solution mixture to ensure this freshness if the chemical solution required to be delivered to the surface of the workpiece is kept fresh. This method typically requires multiple sets of precision fluid controllers and complex flow through mixing devices, each of which is matched with each chemical solution. These precision fluid controllers and complex flow-through mixing devices will cause the cost of this σ early workpiece wet-cleaning equipment to be unacceptable to IC manufacturers. 200941612 As mentioned above, due to the reaction deduction, the exothermic heat of the Japanese and the combination, the temperature of the prepared mixed solution often changes over time. ▲ Because the suitable method is similar to a transient mixing and conveying technology, the desired process may not be achieved at the delivery point unless there are multiple sets of heating devices built into the pipeline at the front of the conveyor point: This will further increase the system. The cost of silk M4·, ,. Another method is to mix the chemical solution at a point before it is delivered from the nozzle to the surface of the workpiece. By adjusting the distance of the mixing point to the surface of the semiconductor workpiece, very limited time control can be performed' to control the transfer time of the mixture from the mixing point to the surface of the semiconductor workpiece. In the actual case, this period does not exceed a fraction of a second. The present invention has been disclosed with respect to the above circumstances. SUMMARY OF THE INVENTION The present invention discloses a cleaning solution preparation and delivery apparatus and method for temperature and activity control for a one-piece wet cleaning process. In one embodiment of the invention, the apparatus has at least one pre-installed scholastic solution preheated to a preset temperature, at least one mixing vessel mixes the fresh chemical solution, and one is connected to the nozzle and freshly mixed The chemical solution is delivered to the chemical solution transfer line at the point of use. The mixing vessel has a plurality of chemical solution inlets, at least one level sensor, one exhaust valve connected to the discharge port, and a compressed gas inlet that blows the chemical solution out to the point of use. The single workpiece wet cleaning process controls the amount of liquid in the mixing vessel and prepares a fresh chemical solution at a predetermined time before the start of the new wet cleaning process. - An embodiment of the invention also discloses a chemical solution preparation method. In this method, a chemical solution is introduced into an mixing vessel equipped with a fluid control device. The mixing process in this mixing vessel starts from the predetermined time u and the residence of the valley liquid in the mixing vessel is controlled by the software control system. By controlling the residence time t_r, the temperature of the mixed solution at the point of use and the activity of the active ingredient therein can be controlled to maintain an optimum combined cleaning effect. When it is reached, the compressed gas is blown into the mixing vessel at a predetermined pressure, and the mixed solution is delivered to the nozzle at a controlled flow rate for a period of time t_d. The gas purge process lasts for a period of t_p until the wet cleaning process is completed to remove residual chemical solution from m in the mixing vessel and transfer tube 4 to ensure that the next mixed solution is completely fresh. One embodiment of the present invention discloses a low cost chemical solution preparation apparatus that uses only a simple fluid control device' without a heater built into the delivery line of each chemical solution nozzle. This equipment also allows the temperature of the fresh mixed solution at the point of use to be controlled and the cleaning effect is optimal. This device also minimizes the deviation of the fresh mixed solution at the point of use between a set of semiconductor workpieces and the processing chamber. [Embodiment] As shown in Fig. 1, in one embodiment of the present invention, the device has a large amount of chemical solution preheating device 101 to preheat the chemical solution to a predetermined temperature T0. The preheating device 101 may be a cycle. A heating bath or a built-in heater or other liquid heating mechanism. The material of the heating device is PVDF, PTFE, PFA or quartz. When a chemical solution is required, a large amount of the chemical solution is transferred to the preheating device by a facility controlled by the software control system, and the thermal device 101 is connected to the pump 1〇2 and the fluid control device 103 by the chemical solution delivery line. At least one chemical solution is connected to the chemical solution delivery line, and the pressure of the solution inlet tube 105 is controlled by the control device. The chemical solution inlet tube 1 〇 5 is connected to the mixing vessel and is connected to a fluid control device to control the pressure of the solution inlet pipe 105 to control the flow rate of the solution delivered to the mixing vessel 201. The chemical solution input line 1〇5 also contains a valve controlled by the software control system to control the start or stop of the transfer of the chemical 〇 (4) to the mixing vessel. For chemicals that do not require preheating, the preheater can be removed from equipment that uses this particular chemical solution. The present invention has a mixing vessel 2 adjacent to the processing chamber 214 to mix the fresh chemical solution as shown in FIG. The material of the mixing container may be PFA' PVDF' PTFE or; A mixed sigma barn 201 corresponding to each chemical solution is connected to a corresponding solution input pipe 2〇2 and 2〇3. The flow rate of each of the f-solutions fed into the mixing vessel 2〇1 is controlled by the fluid control device of the corresponding chemical solution input to the official road, and the flow rate Φ of the chemical solution to be mixed is preset. The fluid control devices 205 and 206 on the chemical solution input line are controlled by the software control system to maintain the chemical/excitation of the input mixing container 201. proportion. In the corresponding processing chamber 2] 4, the wet cleaning process begins with the pre-a ten-day temple t, the chemical solution input lines 2 〇 2 and (5) are opened by the software control system, and the corresponding chemical solution is at a predetermined ratio. It is conveyed into the mixing container 2〇1. The mixing vessel 2〇1 contains at least one liquid. The position sensor 207' controls the total amount of liquid mixture required by the process. When the liquid level of the - (4) mixture reaches the position of the liquid level sensing g 207 i control, the valve of the chemical solution input pipe is closed, and the transfer to the mixing container is stopped. The chemical solution mixture stays in the mixing vessel for t~r time, etc. * - The chemical solution of the wet cleaning process in the container to be mixed 2 0 1 is optimized. This optimum cleaning effect is determined by the yield of the active reactant and the temperature of the mixed solution, and can be controlled by the control time t_r. The mixing vessel 2〇1 contains a compressed gas line 209 at the top of the mixing vessel and a chemical solution delivery tube located near the bottom of the vessel. The delivery tube is connected to a nozzle 212 in the processing chamber 214. When the wet process is started, the compressed gas is blown into the mixing vessel 201 by the compressed gas line 2〇9 at the top of the mixing vessel 201 at a certain pressure, thereby blowing the fresh chemical solution mixture into the nozzle 2 1 2 at a certain flow rate. It flows to the surface of the monolithic semiconductor workpiece 23 of the processing chamber 2丨4. The control of the flow rate and the treatment time is achieved by controlling the blowing pressure of the compressed gas and the total amount of the chemical solution mixture in the mixing vessel. When the wet process is completed, the compressed gas will continue to blow for a period of time t_p, and the mixed container 2〇1 and the remaining chemical mixture in the solution transfer tube between the mixing vessel 201 and the processing chamber nozzle 212 are completely removed. The post-treatment gas is blown so that the mixed masher 2 〇 1 has no residual chemical solution, ensuring the mixing and transport of the fresh chemical solution mixture of the next semiconductor workpiece 213 j π washing process. The hybrid ST two includes a top on/off exhaust valve 208 that communicates with the helium & When the compressed reservoir _ and the chemical solution are delivered to the nozzle 212, the read gate 2 0 8 is closed. The g/D unit includes a temperature sensor 2 11 and a pressure sensor. The temperature and pressure in the mixing container are controlled. In the embodiment of the present invention, the multi-directional manifold is controlled. In one embodiment, the amount of chemical solution of the I mixing vessel 201 is controlled by a fluid control valve. Through the force and the setting of the fluid control valve, the flow rate of the chemical solution into the mixing vessel can be controlled to control the total ratio of the chemical solution mixture to the mixing ratio. In another embodiment of the invention, the amount of chemical solution input to the mixing volume n 2Q1 is controlled by a mass flow controller. The mixing ratio can be precisely controlled by controlling the quality of the chemical solution input to the mixing vessel.另一个 In another embodiment of the invention, the amount of chemical solution delivered to the mixing vessel (10) is controlled by metering. The mixing of the two chemical solutions: the control of the ratio and the total amount of the mixed solution can be achieved by controlling the stroke of each of the metering pumps in each of the chemical solution paths. In another embodiment of the invention, a method of preparing a chemical solution for a single-piece wet cleaning process is disclosed. The method comprises the following steps a) generating mixing at different starting temperatures, intersection, and &curve; temperature and time of r-port cold liquid b) ^ washing system, completely virtual operation and desired treatment - the number of people, using a mixture of the parent chemical solution to process a set of workpieces, resulting in the treatment of two pieces of work / chemical bamboo, six, β Λ in the same processing chamber of the washing system Complete delivery to its re-round r + ., imaginary attack interval U-min) ° select the smallest t_min of all processing chambers; wind c) #desired chemical solution concentration, use point temperature (1) m send rate (4)' and The amount of chemical solution to be delivered (q) is used to determine the process parameters of the apparatus. This includes the temperature T_〇, tj, t ^ “匕d) of the heating solution of the parent chemical solution. These 12 200941612 process parameters are set in the control software for the chemical solution corpse. e) Control software verification ^^ Art parameter. If the parameter is invalid, run error, and require new input parameter ·, 〇 process semiconductor workpiece; g) 混合, +. dimension of the mixing container. 斤 return pressure release valve is open h) Handling each chemical of the mixing vessel during the processing of the semiconductor industry
溶液注入工藝於t = tf〜+ ,.. — t_r - t_i時刻開始； ^ 〇處理半導體工件的過程中，混合容器的每種化學 合液主入工藝於t = t — f t j時刻停止。所述容器中 的所述化學溶液混合物體積爲Q ; j) 處理半導體工件的過程中，所述容器中的所述壓 力釋放閥門在t = 1:_f時刻關閉； k) 處理半導體工件的過程中，所述容器在t = tf 時刻以一定壓力通入壓縮氣體； l) 處理半導體工件的過程中，所述容器的化學溶液 混合物的輸送於t = t_f時刻開始； ra) 處理半導體工件的過程中，所述容器的化學溶液 混合物於t = t_f + t_d時刻完成輸送，所述化學溶液混 合物的輸送總體積爲Q ; η)處理半導體工件的過程中’所述谷器中的所述壓 力釋故閥門在t = + Ld + t_P時刻打開， 〇)處理半導體工件的過程中，所述谷器在t = t_f + t—d + t_p時刻停止通入壓縮氣體； 13 200941612 P)半導體工件準備進入工藝中的下一處理步驟； q)重復步驟（f) - (p)處理每片工件。 按所揭示的方法’控制化學溶液在混合容器内的停留 時間t_r可控制化學溶液在使用點的溫度。第3圖爲不阄 化學溶液預熱温度下建立的溫度與混合時間曲線，透過该 圖’可按要求的使用點溫度得到t_r。並且，t—r可透過 調整化學溶液的預熱溫度而改變。 更具體地而言，控制t—r不僅控制化學溶液的溫度， 還控制活性反應物的産額。化學溶液的濕法清洗效果由二 個方面決定，一是化學溶液産生的活性反應物産額，它決 疋了活性反應物的》辰度，二是活性反應物的活性，它與化 學溶液的溫度有關。最佳的工作效果區域由活性反應物的 産額與活性聯合得到，它決定了停留t_r的範圍。更多詳 細的情況將在以下幾段的示例中介紹。 所揭示的設備與方法爲新鮮化學溶液製備與輸送提 供了 一個低成本解決方案。該設備與方法保證了化學溶液 在使用點溫度與活性相同，清洗效果達到最佳，一組半導 體工件之間以及處理腔之間偏差最小。這對於現代單片半 導體工件濕法清洗工藝至關重要。 一項具體的應用一一爲單工件濕法清洗工藝製備 SPM ’將作爲上述發明的一個示例予以介紹。 該混合設備具有一個預熱裝置1 0 1，將濃硫酸加熱至 το。在這個示例中，預熱裝置101是—個循環加熱槽。H2S⑴ 槽具有一條循環回路以及一個在循環回路内的加熱器。這 14 200941612 條加熱循環回路使濃硫酸在槽内保持於預熱溫度τ〇。 。Η孤槽透過-個泵與大量化學溶液源相連，並含有一個 ·· ★位感測器和控制機構。當槽内濃硫酸的液位低於低液位 時（該位置由一個低液位感測器監控），栗開始從化學溶 液源抽取濃溶液到槽中，一直到槽中的液體達到充滿液位 (該位置由另一個液位感測器監控）。HzS(h槽還與一多向 歧管1 04相連，並備有一個流體控制器】〇3，從而控制多 向歧管104的壓力。多向歧管104連接多條獨立的管路 1 0 5，每條管路輸送濃硫酸至相對應的化學溶液混合容器 20 1。每條管路1 〇5上分別有一個流體控制器與一個閥 門。流體控制器控制從HzSO4槽1 01輸入溶液混合容器2〇 1 的ihs〇4流速’由軟體控制系統控制閥門開關，從而將h2S〇4 輸送到化學溶液混合容器2 0 1中。 該混合設備具有一個H2(h槽（溶液槽）1 〇 7以儲存大量 Ηζ〇2。H2〇2槽107透過一個泵與大量化學溶液源相連，並 Φ 含有一個液位感測器和控制機構。當槽内濃Ih(h的液位低 於低液位時（該位置由一個低液位感測器監控），泵開始 從化學溶液源抽取濃溶液到槽中，一直到槽中的液體達到 充滿液位（該位置由另一個液位感測器監控）^ Ηζ〇2槽還 與一多向歧管1 04相連，並備有一個流體控制器1 03 ,從 而控制多向歧管104的壓力。多向歧管104連接多條獨立 • 的管路，每條管路輸送濃H2〇2至相對應的化學溶液混合容 • 器20 1。每條管路上分別有一個流體控制器與一個閥門。 流體控制器控制從H2〇2槽輸入溶液混合容器的H2〇2流速_。 15 200941612 由軟體控制系統控制閾門開關，從而將H2〇2輸送到化學溶 . 液混合容器201中。 • 在處理腔21 4附近有一個混合容器2 0 1來混合新鮮的 SPM溶液。一個混合容器2〇1連接與H2S〇4槽對應的h2S〇4 輸送管路203以及與H2〇2槽對應的ihCh輸送管路202，濃 H2S(h和H2〇2到化學溶液容器的流速由相應管路上的流體 控制器2 0 5和2 0 6控制’它們的流速比例是預定的。由軟 體控制系統控制ΗΑ〇4與H2〇2管路上的閥門同時開關，以 保證輸入化學溶液容器201的iso4與Ηζ〇2量的比例，因 爲二種化學溶液的流速已設定。混合容器2〇1連接存水輸 送管路2 0 4，在需要的時候可以輸送存水到混合容器2 〇丄 中清洗該容器。The solution injection process starts at t = tf~+ , .. - t_r - t_i; ^ During the processing of the semiconductor workpiece, each of the chemical incorporation processes of the mixing vessel is stopped at t = t - f t j . The volume of the chemical solution mixture in the vessel is Q; j) during processing of the semiconductor workpiece, the pressure relief valve in the vessel is closed at time t = 1: _f; k) in the process of processing the semiconductor workpiece The container is pressurized with a pressure at a pressure of t = tf; l) during the processing of the semiconductor workpiece, the transport of the chemical solution mixture of the container begins at time t = t_f; ra) in the process of processing the semiconductor workpiece , the chemical solution mixture of the container is completed at t = t_f + t_d, the total volume of the chemical solution mixture is Q; η) during the processing of the semiconductor workpiece, the pressure in the trough is released When the valve is opened at t = + Ld + t_P, 〇) in the process of processing the semiconductor workpiece, the valley stops the introduction of the compressed gas at time t = t_f + t - d + t_p; 13 200941612 P) semiconductor workpiece preparation into the process Next processing step; q) Repeat step (f) - (p) process each piece of the workpiece. The residence time t_r of the chemical solution in the mixing vessel is controlled in accordance with the disclosed method to control the temperature of the chemical solution at the point of use. Figure 3 is a plot of temperature and mixing time established at the preheating temperature of the chemical solution. From this figure, t_r can be obtained at the required point of use temperature. Also, t-r can be changed by adjusting the preheating temperature of the chemical solution. More specifically, controlling t-r not only controls the temperature of the chemical solution, but also controls the yield of the active reactant. The wet cleaning effect of the chemical solution is determined by two aspects. One is the active reactant yield from the chemical solution, which determines the "activeness" of the active reactant, and the activity of the active reactant, which is the temperature of the chemical solution. related. The optimum working effect area is obtained by the combination of the yield and activity of the active reactant, which determines the extent of the residence t_r. More details will be covered in the examples in the following paragraphs. The disclosed apparatus and methods provide a low cost solution for fresh chemical solution preparation and delivery. The device and method ensure that the chemical solution has the same temperature and activity at the point of use, and the cleaning effect is optimal, and the deviation between a group of semiconductor workpieces and the processing chamber is minimized. This is critical for modern single-chip semiconductor workpiece wet cleaning processes. A specific application - the preparation of SPM ' for a single workpiece wet cleaning process will be described as an example of the above invention. The mixing device has a preheating device 101 and heats the concentrated sulfuric acid to το. In this example, the preheating device 101 is a circulating heating tank. The H2S(1) tank has a circulation loop and a heater in the loop. This 14 200941612 heating cycle keeps the concentrated sulfuric acid in the tank at the preheating temperature τ〇. . The Η slot is connected to a large number of chemical solution sources through a pump and contains a ·· ★ position sensor and control mechanism. When the level of concentrated sulfuric acid in the tank is lower than the low level (the position is monitored by a low level sensor), the pump begins to draw the concentrated solution from the source of the chemical solution into the tank until the liquid in the tank reaches the full liquid. Bit (this position is monitored by another level sensor). HzS (h-slot is also connected to a multi-directional manifold 104, and is provided with a fluid controller] 〇3, thereby controlling the pressure of the multi-directional manifold 104. The multi-directional manifold 104 is connected to a plurality of independent pipes 10 5. Each pipeline delivers concentrated sulfuric acid to a corresponding chemical solution mixing vessel 20 1. Each of the pipelines 1 〇 5 has a fluid controller and a valve. The fluid controller controls the mixing of the input solution from the HzSO4 tank 01. The ihs〇4 flow rate of the container 2〇1 is controlled by the software control system to switch the h2S〇4 to the chemical solution mixing vessel 210. The mixing device has an H2 (h tank (solution tank) 1 〇7 To store a large amount of Ηζ〇2. H2〇2 tank 107 is connected to a large number of chemical solution sources through a pump, and Φ contains a liquid level sensor and control mechanism. When the tank is concentrated Ih (h liquid level is lower than low level) When the position is monitored by a low level sensor, the pump begins to draw concentrated solution from the source of chemical solution into the tank until the liquid in the tank reaches a full level (this position is monitored by another level sensor) ) ^ Ηζ〇 2 slot is also connected to a multi-directional manifold 104 A fluid controller 103 controls the pressure of the multi-directional manifold 104. The multi-directional manifold 104 connects a plurality of independent tubes, each of which delivers a concentrated H2〇2 to a corresponding chemical solution mixing container. 20 1. Each pipe has a fluid controller and a valve. The fluid controller controls the H2〇2 flow rate from the H2〇2 tank to the solution mixing vessel. 15 200941612 The threshold control is controlled by the software control system, which will H2〇2 is transferred to the chemical solution mixing tank 201. • There is a mixing vessel 2 0 1 near the processing chamber 21 4 to mix the fresh SPM solution. One mixing vessel 2〇1 is connected to the h2S corresponding to the H2S〇4 tank. 〇4 conveying line 203 and ihCh conveying line 202 corresponding to H2〇2 tank, concentrated H2S (h and H2〇2 to chemical solution container flow rate controlled by fluid controllers 2 0 5 and 2 0 6 on the corresponding line 'The ratio of their flow rate is predetermined. The valve on the ΗΑ〇4 and H2〇2 lines is controlled by the software control system to switch at the same time to ensure the ratio of the amount of iso4 to Ηζ〇2 of the input chemical solution container 201, because the two chemical solutions The flow rate has been set. Mix Connected to the water storage container 2〇1 conveying line 204, when required can be delivered to the water in the mixing vessel 2 billion Shang cleaning the container.
從第3圖的HACh和LCh混合的溫度與時間曲線中看 到，混合的IhS〇4和Hz〇2溶液停留時間t__r可根據要求的 工藝溫度τ得到，更準確地說，根據SPM ❹到。依據科學與工程上的研究探索，由屍合的二果： Ηζ〇2溶液産生的卡洛酸是濕法清洗工藝的活性反應物，並 且SPM溶液的清洗效果取決於卡洛酸產額（決定反應物的 濃度）與SPM溶液溫度（決定使用點的反應常數，即 溶液輸送到半導體工件213表面的反應常數）。我們還知 道，當卡洛酸生成的同時，它也隨即分解，並且分解迷率 • 隨溫度增高而增大。反應表示爲：From the temperature versus time curves of the HACh and LCh mixing in Figure 3, the mixed IhS〇4 and Hz〇2 solution residence time t__r can be obtained according to the required process temperature τ, more precisely, according to SPM. According to scientific and engineering research, the two fruits from the corpse: Caroic acid produced by the Ηζ〇2 solution is the active reactant of the wet cleaning process, and the cleaning effect of the SPM solution depends on the amount of caloric acid (determination The concentration of the reactants) and the temperature of the SPM solution (determining the reaction constant of the point of use, that is, the reaction constant of the solution to the surface of the semiconductor workpiece 213). We also know that when caloric acid is formed, it also decomposes and the decomposition rate increases with temperature. The response is expressed as:
’ H2SO4 + H2O2 -> H2SO5 -> H2SO4 + H2O 卡洛酸濃度由下式計算： 16 200941612 d _5] / d t = kl(T⑴）酿][_ _ Μτα))隊] 其中ki(T(t))是HzSOs生成反應常數，k2 (T(t))是 • H2S〇5分解反應常數。kl (T(t)M k2(T(t))都是關於溫度 T的函數，溫度T本身又是混合時間t的函數。用這種方 法，估計卡洛酸産額與時間曲線和活性與時間的曲線，如 第4圖所示。透過合併這二條曲線，可估計濕法清洗工藝 的聯合作用隨時間變化關係，如第5圖所示。從第5圖中二 可以看到曲線的峰值爲得到最大清洗效果的最佳工作範 β ®。最佳聯合作用區域決定了 t_r的範圍，使t學容= 合物達到最佳的清洗性能。該最佳效果區域的時間範圍爲 H2S〇4和H2〇2混合後的幾秒到幾分鐘，這由SPM溶液的溫 度決定。SPM達到最佳效果的時間範圍很小，要求新鮮地 混合並輸送化學溶液至使用點。透過研究化學溶液混合的 溫度與時間曲線和聯合作用與時間曲線，可得到在混 合容器中的停留時間t_r，以控制溫度以及輸到半導體工 鲁 件表面的新鮮SPM溶液的混合效果。 透過定義兩種化學溶液注入混合容器的時間與停留 時間，預計在混合容器中開始混合ΗΑ〇4與H2〇2的時間 爲 在相應清洗腔内進行SPM工藝開始之前的預計時間 t，H2S〇4管路與H2〇2管路的閥門由軟體控制系統打開， 將ihSCh與H2〇2以預定比例先後輸送入化學溶液混合容器 2(U。預熱的H2S〇4與H2〇2混合將產生大量熱量，升高混合 17 200941612 液體溫度。透過高溫下的擴散以及密度差異引起的對流， .- H2S〇4與1〇2將均勻地快速混合。混合容器201包括至少 . 一個液位感測器207，控制工藝要求的SPM溶液的總量。 當SPM液位達到預定液位時，ISO4管路與H2〇2管路上的 閥門同時關閉，停止向混合容器輸送IhS〇4與H2〇2，此注 入工藝時間爲t_i。根據溫度與時間曲線以及聯合作用與 時間曲線’ SPM混合溶液將在混合容器中停留預定時間 ❺ t-1" ’以達到所期望的温度與活性成分的產額。混合容器 包括一條位於混合容器201頂部的壓縮氣體管路20 9與一 條位於容器底部並與處理腔214内的噴嘴212化學相連的 化學溶液輸送管路。當SPM工藝開始時，壓縮氣體以一定 壓力’從位於混合容器201頂部的壓縮氣體管路209吹入 混合容器201’將SPM溶液以一定流速吹入處理腔214内 的噴嘴21 2。流速與處理時間t_d可由控制壓縮氣體的吹 入壓力和混合容器内SPM溶液總體積來控制。當SPM工藝 φ 結束’壓縮氣體繼績吹入一段t_p時間，從而將SPM溶液 從混合容器與混合容器與處理腔中喷嘴之間的化學溶液 輸送管路中完全除去。該後處理氣體吹送使混合容器無殘 餘SPM，確保一組半導體工件之間以及處理腔之間的新鮮 SPM的混合及輸送相同。 根據揭示的設備與方法，可控制溫度與聯合清洗效 果’來製備新鮮SPM溶液，並將其輸送至使用點。透過這 種方法’ 一組半導體工件之間以及處理腔之間的工藝偏差 最小’並且清洗效果達到最佳，從而節約化學溶液用量，'H2SO4 + H2O2 -> H2SO5 -> H2SO4 + H2O The concentration of kaluic acid is calculated by the following formula: 16 200941612 d _5] / dt = kl(T(1)) brewing][_ _ Μτα))] where ki(T( t)) is the reaction constant of HzSOs, and k2 (T(t)) is the decomposition constant of H2S〇5. Kl (T(t)M k2(T(t)) is a function of temperature T, which in turn is a function of mixing time t. In this way, the caloric acid yield and time curve and activity and time are estimated. The curve is shown in Figure 4. By combining the two curves, the combined effect of the wet cleaning process over time can be estimated, as shown in Figure 5. From Figure 5, we can see that the peak value of the curve is The best working range for maximum cleaning results is β. The optimum combined action area determines the range of t_r, so that the best cleaning performance is achieved. The best effect area is H2S〇4 and H2〇2 is mixed for a few seconds to a few minutes, which is determined by the temperature of the SPM solution. The time range in which the SPM achieves the best effect is small, requiring fresh mixing and transport of the chemical solution to the point of use. With the time curve and the combined action and time curve, the residence time t_r in the mixing vessel can be obtained to control the mixing effect of the temperature and the fresh SPM solution delivered to the surface of the semiconductor worker. By defining two chemical solution injections The time and residence time of the container are expected to start mixing ΗΑ〇4 and H2〇2 in the mixing vessel for the estimated time t before the start of the SPM process in the corresponding cleaning chamber, H2S〇4 pipe and H2〇2 pipe The valve of the road is opened by the software control system, and the ihSCh and H2〇2 are successively delivered into the chemical solution mixing container 2 (U. The preheated H2S〇4 and H2〇2 are mixed to generate a large amount of heat, and the mixing is increased 17 200941612 Liquid temperature. Through convection caused by diffusion at high temperature and density difference, .-H2S〇4 and 1〇2 will be uniformly mixed rapidly. Mixing vessel 201 includes at least one liquid level sensor 207 to control the SPM solution required by the process. When the SPM level reaches the predetermined level, the ISO4 line and the valve on the H2〇2 line are closed at the same time, and the delivery of IhS〇4 and H2〇2 to the mixing container is stopped. The injection process time is t_i. With the time curve and the combined action and time curve 'SPM mixed solution will stay in the mixing vessel for a predetermined time ❺ t-1" 'to achieve the desired temperature and the yield of the active ingredient. The mixing container includes The compressed gas line 20 9 at the top of the mixing vessel 201 is connected to a chemical solution delivery line located at the bottom of the vessel and chemically connected to the nozzle 212 in the processing chamber 214. When the SPM process begins, the compressed gas is located at a certain pressure. The compressed gas line 209 at the top of the mixing vessel 201 is blown into the mixing vessel 201' to blow the SPM solution into the nozzle 21 2 in the processing chamber 214 at a constant flow rate. The flow rate and the treatment time t_d can be controlled by the blowing pressure of the compressed gas and the mixing vessel. The total volume of the SPM solution is controlled. When the SPM process φ ends, the compressed gas process is blown for a period of t_p, thereby completely removing the SPM solution from the chemical solution transfer line between the mixing vessel and the mixing vessel and the nozzle in the processing chamber. This post-treatment gas purge leaves the mixing vessel free of residual SPM, ensuring the same mixing and delivery of fresh SPM between a set of semiconductor workpieces and between the processing chambers. According to the disclosed apparatus and method, the temperature and combined cleaning effect can be controlled to prepare a fresh SPM solution and deliver it to the point of use. Through this method, the process deviation between a group of semiconductor workpieces and between processing chambers is minimized and the cleaning effect is optimized, thereby saving the amount of chemical solution.
1S 200941612 降低成本。 以上不例直接針對本發明的優選實施例。也可能設計 不離開本發明的基本涵蓋範圍的其他及進—步應用。本發 明涵蓋的範圍由以下申請專利範圍決定。 【圖式簡單說明】 圖描述了此設備輸送化學溶液到混合點的部伤。1S 200941612 Reduce costs. The above examples are directed to the preferred embodiment of the invention. It is also possible to design other and further applications that do not leave the basic scope of the invention. The scope of the present invention is determined by the scope of the following patent application. [Simple description of the diagram] The figure depicts the injury of the device to the chemical solution to the mixing point.
第2圖描述了此設備製備和輸送化學溶液的部份。 第3圖描述了在不同預熱溫度下的溫度與時間曲線》 第4圖描述了化學溶液混合物中活性成分的處額與 時間曲線和活性與時間曲線。 第5圖描述了化學溶液混合物産額活性聯合作用與 時間的曲線 主要元件符號說明】Figure 2 depicts the portion of the apparatus for preparing and transporting chemical solutions. Figure 3 depicts the temperature vs. time curve at different preheat temperatures. Figure 4 depicts the balance of the active ingredient in the chemical solution mixture versus time versus activity versus time. Figure 5 depicts the combined effect of chemical solution mixture yield activity versus time.
101·預熱裝置 1 0 3.流體控制裝置 1 0 5.溶液輸入管 2 01 ·混合容器 203.溶液輸入管 2 0 5 _流體控制裝置 2 0 7 ·液位感測器 209.壓縮氣體管路 211 ·溫度感測器 213.半導體工件 102·泵 1 0 4.多向岐管 107.溶液槽 202·溶液輸入管 2 0 4.純水輸送管路 2 0 6.流體控制裝置 2 0 8 ·開/關排氣閥門 210·壓力感測器 212.喷嘴 214.處理腔 19101·Preheating device 1 0 3. Fluid control device 1 0 5. Solution input pipe 2 01 · Mixing container 203. Solution input pipe 2 0 5 _ Fluid control device 2 0 7 · Liquid level sensor 209. Compressed gas pipe Road 211 · Temperature sensor 213. Semiconductor workpiece 102 · Pump 1 0 4. Multi-directional manifold 107. Solution tank 202 · Solution input tube 2 0 4. Pure water delivery line 2 0 6. Fluid control device 2 0 8 · On/Off exhaust valve 210 · Pressure sensor 212. Nozzle 214. Processing chamber 19