200933571 九、發明說明: 【發明所屬之技術領域】 本發明係關於圖像顯示裝置’尤其係關於主動矩陣式之 有機電致發光顯示裝置。 【先前技術】 主動矩陣驅動之有機電致發光(Electr〇 Luminescence)顯 示裝置(以下稱為有機紅顯示裝置),被期待作為下一代之 平板顯示器。 先前’作為有機EL顯示裝置之驅動電路,已知為具有以 下者之電路構成者:驅動用薄膜電晶體(以下稱為驅動 TFT) ’帛Μ對有機電致發光元件(以下稱為有機杜元件)供 給驅動電Κ呆持電容器’其—端子連接於驅動㈣之閉 極電極,且保持圖像電壓;復位用薄膜電晶體(以下稱為 復位開關),其連接於驅動TFT之閘極電極與沒極電極之 間;薄膜電晶體(以下稱為像素開關),其係將保持電容器 之另-端子連接於信號線;及薄膜電晶體(以下稱為三角 波開關),其係將保持電容器之另一端子連接於三角波電 垡輸入線上述構成揭示於日本特開2003-005709號公 報。 圖6A係說明先前之有機EL顯示面板之像素之構造的電 路構成圖1¾電路構成亦記載於日本特開2〇〇3_〇〇57〇9號 公報》 如圖6A所示,各像素201具有有機EL元件202,有機EL· 元件202之端連接於共通電極203,且經由驅動TFT(Thin 135130.doc 200933571BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image display device', particularly to an active matrix type organic electroluminescence display device. [Prior Art] An active matrix driven organic electroluminescence (hereinafter referred to as an organic red display device) is expected as a next-generation flat panel display. The drive circuit of the organic EL display device is known as a circuit constitutor having the following: a thin film transistor for driving (hereinafter referred to as a driving TFT) 帛Μ a pair of organic electroluminescent elements (hereinafter referred to as an organic dynode element) Supplying a driving capacitor to hold the capacitor 'the terminal is connected to the closed electrode of the driving (4) and maintaining the image voltage; the thin film transistor for resetting (hereinafter referred to as a reset switch) is connected to the gate electrode of the driving TFT and Between the electrodeless electrodes; a thin film transistor (hereinafter referred to as a pixel switch) which connects the other terminal of the capacitor to the signal line; and a thin film transistor (hereinafter referred to as a triangular wave switch) which will hold the capacitor another One terminal is connected to a triangular wave electric power input line. The above configuration is disclosed in Japanese Laid-Open Patent Publication No. 2003-005709. Fig. 6A is a circuit diagram showing the structure of a pixel of a conventional organic EL display panel. Fig. 13A is also disclosed in Japanese Laid-Open Patent Publication No. Hei. The organic EL element 202, the end of the organic EL element 202 is connected to the common electrode 203, and via the driving TFT (Thin 135130.doc 200933571
Film-Transistor :薄膜電晶體)2〇4而連接於電源線(PWR)。 在驅動TFT204之閘極電極與汲極電極之間連接有復位開關 205 ° 又’驅動TFT204之閘極電極連接於保持電容器2〇6之一 端子。保持電容器之另一端子連接於連接著信號線(DAT) 之像素開關207、及連接著三角波線(SWP)之三角波開關 208。另,復位開關205藉由復位開關控制線2丨丨控制,像 素開關207藉由像素開關控制線2〇9控制,三角波開關208 藉由三角波開關控制線210控制。 其次’說明先前例之動作。 圖6B係圖6A之像素開關控制線2〇9、三角波開關控制線 21〇、復位開關控制線211上之電壓位準的圖。像素開關控 制線209上之ON、OFF表示像素開關2〇7之ON狀態、〇FF 狀態,同樣的,三角波開關控制線21〇上之on、0FF表示 三角波開關208之ON狀態、OFF狀態,復位開關控制線211 上之ON、OFF表示復位開關205之ON狀態、〇FF狀態。 被選擇寫入之像素,於時刻t0至時刻t2之寫入期間,像 素開關控制線209之電壓成高位準(以下稱為H位準),像素 開關207成ON狀態。又,於時刻t0至時刻u之第i期間,復 位開關控制線211之電壓成Η位準’復位開關2〇5成〇>^狀 態。另,於時刻t0至時刻t2之寫入期間,由於三角波開關 控制線21 0為低位準(以下稱為l位準),故三角波開關2〇8 成斷開狀態》 在第1期間,有機EL元件202中經由連接二極體之驅動 135130.doc 200933571 TFT204而流通源自於電源線(PWR)之電流。此處,驅動 TFT204與有機EL元件202構成以驅動TFT204之閘極電極為 輸入端、以驅動TFT204與有機EL元件202之連接點為輸出 端之反相器電路’且在該第1期間,該反相器電路之輸入 . 端與輸出端藉由復位開關205予以短路》 . 於該第1期間,在該反相器電路之輸出入處會產生反轉 . 反相器時之輸入中點電壓,使該輸入中點電壓輸入保持電 容器206之一端。再者,於該第1期間,施加於信號線 (DAT)之信號電壓會經由像素開關2〇7而輸入保持電容器 206之另一端。 其後,於時刻tl至時刻t2之第2期間,若復位開關控制線 2 11之電壓成L位準,則復位開關2〇5成〇FF狀態,使上述 之輸入中點電壓與信號電壓之電壓差記憶於保持電容器 206。至此完成寫入動作。 其次,於時刻t2 ’若寫入移動到下一列像素,則像素開Film-Transistor: Thin film transistor) 2〇4 and connected to the power line (PWR). A reset switch 205 is connected between the gate electrode and the drain electrode of the driving TFT 204, and a gate electrode of the driving TFT 204 is connected to one terminal of the holding capacitor 2?6. The other terminal of the holding capacitor is connected to a pixel switch 207 to which a signal line (DAT) is connected, and a triangular wave switch 208 to which a triangular wave line (SWP) is connected. Further, the reset switch 205 is controlled by the reset switch control line 2, the pixel switch 207 is controlled by the pixel switch control line 2〇9, and the triangular wave switch 208 is controlled by the triangular wave switch control line 210. Next, the action of the previous example is explained. Fig. 6B is a diagram showing the voltage levels on the pixel switch control line 2〇9, the triangular wave switch control line 21〇, and the reset switch control line 211 of Fig. 6A. The ON and OFF of the pixel switch control line 209 indicate the ON state and the 〇FF state of the pixel switch 2〇7. Similarly, on and 0FF of the triangular wave switch control line 21 indicate the ON state and the OFF state of the triangular wave switch 208, and reset. ON and OFF on the switch control line 211 indicate the ON state and the 〇FF state of the reset switch 205. In the pixel selected for writing, the voltage of the pixel switch control line 209 is at a high level (hereinafter referred to as H level) during the writing period from time t0 to time t2, and the pixel switch 207 is turned on. Further, during the i-th period from the time t0 to the time u, the voltage of the reset switch control line 211 becomes a ’ level reset switch 2 〇 5 becomes 〇 > In the writing period from time t0 to time t2, since the triangular wave switching control line 21 0 is at a low level (hereinafter referred to as a 1-level), the triangular wave switch 2〇8 is turned off. In the first period, the organic EL In the element 202, a current originating from a power supply line (PWR) is distributed via a driving 135130.doc 200933571 TFT 204 connecting the diodes. Here, the driving TFT 204 and the organic EL element 202 constitute an inverter circuit in which the gate electrode of the driving TFT 204 is an input terminal and the connection point of the driving TFT 204 and the organic EL element 202 is an output terminal, and during the first period, The input of the inverter circuit is short-circuited by the reset switch 205. During the first period, an inversion occurs at the input and output of the inverter circuit. The input midpoint voltage of the inverter The input midpoint voltage is input to one end of the holding capacitor 206. Further, in the first period, the signal voltage applied to the signal line (DAT) is input to the other end of the holding capacitor 206 via the pixel switch 2?7. Thereafter, in the second period from time t1 to time t2, if the voltage of the reset switch control line 2 11 is at the L level, the reset switch 2〇5 is in the 〇FF state, so that the input midpoint voltage and the signal voltage are input. The voltage difference is stored in the holding capacitor 206. This completes the write operation. Second, at time t2 ’, if the write moves to the next column of pixels, the pixel is turned on.
〇 關控制線209之電壓成為L位準,像素開關207切換為0FF 狀態,同時,二角波開關控制線2〖〇之電壓成H位準,三角 波開關208成ON狀態。 藉此,對保持電容器206之另一端施加來自三角波線 (SWP)之三角波狀之掃描電壓(三角波電壓)。 該三角波電壓大致含有信號電壓,當三角波電壓與先寫 入之仏號電壓相等時’藉由保持電容器206之運作使先前 之輸入中點電壓再現於驅動TFT2〇4之閘極電極。即,藉由 三角波電壓與所寫入之信號電麼之大小關係,可在時間上 135130.doc 200933571 控制將驅動TFT204與有機EL元件202之中點作為輸出端之 反相器電路的ΟΝ/OFF。 由於在該反相器電路導通時,有機EL元件202明亮點 亮,而在反相器電路斷開時有機EL元件202熄滅,故藉由 相對於特定之三角波電壓控制信號電壓,可控制各像素之 1幀期間内的點亮期間,而將圖像顯示於有機EL顯示面 板。 【發明内容】 圖6 A所示之像素實際係以矩陣狀配置為複數個。若像素 數為320(水平)xRGBx240(垂直)個,則圖6A所示之1根電源 線(PWR)連接有240個有機EL元件202。 且,由於電源線(PWR)亦具有某程度之電阻成份,故根 據點亮狀態之有機EL元件202之數目,電源線(PWR)上之 電壓位準會有所變動。此外,電源線(PWR)上之電壓位準 亦隨雜訊變動。 另一方面,圖6A所示之電路中,驅動TFT204於圖8所示 之線性區域(Lre)動作。即,圖6A之驅動TFT204係作為 ΟΝ/OFF之開關動作。因此,圖6A之驅動TFT204在ON狀態 下,會對有機EL元件202之陽極電極施加有電源線(PWR) 上之電源電壓。另,圖8係說明薄膜電晶體之電壓(VD)-電 流(Id)特性的模式圖,且圖8中,Lre為線性區域,Sre為飽 和區域。 即,先前之有機EL顯示裝置中,由於有機EL元件202之 驅動基本為ΟΝ/OFF之2值,故因雜訊、或自電源線(PWR) 135130.doc 200933571 之電阻成份等所引起之電源線(PWR)上之電壓位準的變 動,會使有機EL元件202受到影響。 圖7係說明有機El元件(有機發光二極體元件)之電壓 (VD)-電流(ID)特性的模式圖,且圖7A表示二極體特性之上 . 升邊緣緩和之有機EL元件的電壓-電流特性,圖7B表示二 : 極體特性之上升邊緣急遽之有機EL元件的電壓-電流特 性。 如圖7之模式圖所示,有機EL元件表示二極體特性。 故,藉由電源線(PWR)上之電壓位準的變動,使流通於有 機EL元件202之電流變動,而使有機EL元件2〇2之發光亮 度變動。 如圖7所示,若於穩定狀態下流通於有機El元件之電流 為(1〇) ’當電源電壓變動(士Δν)時’則具有圖7八所示之二 極體特性之有機EL元件之電流以(±Ma)變動,具有圖冗所 示之二極體特性之有機EL元件之電流以(±Aib)變動。 φ 且’從圖7可容易地理解,具有圖7B所示之二極體特性 之有機EL元件與具有圖7 A所示之二極體特性之有機孔元 件相比較’其流通之電流出現大幅變動。 且’先前’具有圖7A所示之二極體特性之有機el元件 * 較為普遍,而近年來,具有圖7B所示之二極體特性之有機 EL兀件則逐漸受到採用,而先前之有機E;L顯示裝置則 因上述電源線(PWR)上之電壓位準的變動,使流通於有機 EL元件202之電流大幅變動’而使有機el元件202之發光 亮度亦大幅變動。 135l30.doc -10- 200933571 如此,先則之有機el顯示裝置具有 '由於電源線(pWR)上 之電壓位準的變動,使流通於有機EL元件202之電流變 動,亦使有機EL元件202之發光亮度變動之問題點。 本發明係為解決上述先前技術之問題點而為者,本發明 之目的在於提供一種可減少圖像顯示裝置中由於電源電壓 之電壓位準的變動導致發光元件之發光亮度之變動的技 術。 本發明之上述及其他目的之新穎特徵將藉由本說明書之 記述及附加圖面闌明。 簡單說明本中請案所揭示之發明中具代表性者之概要如 下。 '、I V Μ π六 π攸双及彳冢京,且 對各上述複數之像素於寫入期間輸入圖像電廢,於上述寫 入'月間連續之發光期間輸人電壓位準隨時間變化之傾斜波 電壓,上述各像素具有發光機構、驅動上述發光機構之驅 ❹ 動電晶體、及-端連接於上述驅動電晶體之閉極電極的電 容7^件;對上述電容元件之另一端於上述寫入期間輸入上 述圖像電壓’於上述發光期間輸入上述傾斜波電麼,·上述 發光機構之點亮時之上述發光強度係於上述發光期間内持 續變化。 又’本發明之另-圖像顯示裝置,其特徵為具備:複數 :像素;複數之信號線’其係對上述複數之像素之各像辛 輸入圖像電H像㈣擇機構,錢經由上述複 號線從上《數之像素巾_寫人上述 : 135130.doc • 1! · 200933571 上述各像素具有電流驅動型之發光元件、連接於電源線與 上述發光元件之間之驅動電晶體、及一端被連接於上述驅 動電晶體之閘極電極之電容元件;於寫入期間將上述圖像 電壓輸入上述電容元件之另一端,且於上述寫入期間連續 . 之發光期間,將電壓位準隨時間變化之傾斜波電壓輸入上 . 述電容元件之另一端;上述發光元件之點亮時之上述發光 . 強度係於上述發光期間内持續變化。 Φ X ’本I明之-樣態可4 ’上述像素選擇機構具有複數 之掃f田線,上述各像素具有連接於上述驅動電晶體之閑極 電極、與連接上述驅動電晶體之上述發光元件之電極之間 的復位電晶體,·且,上述復位電晶體之閑極電極連接於上 述複數之掃描線中對應的掃描線。 又=本發明之一樣態可為,上述像素選擇機構具有複數 之點免控制線;上述各像素具有連接於上述驅動電晶體與 上述發光元件之間之點亮電晶體;且,上述各點亮電晶體 ® 《閘極電極連接於上述複數之點亮控制線中對應的點亮控 制線。 二 :’本發明之一樣態可為,上述寫入期間係 至第3期間,且上述各像素之上述復位電晶體,^ :入』間内之上述第1期間及上述第2期間導通,於上述 寫入期間内之I·、+.妨。u Χ ^ 述第3期間與上述發光期間斷開;上述各 亮電晶體,於上述發光期間及上述寫入期間 及上述第期間導通’於上述寫入期間内之上述第2期間 及上述第3期間斷開。 I35130,doc -12- 200933571 又’本發明之一樣態可為,上述各像素具有輸入上述傾 斜波電壓之複數之傾斜波電壓輸人線,且,上述各像素具 有:第1開關電晶冑’其係於寫人期間將上述電容元件之 另-端連接於上述複數之信號線中對應的信號線;及第2 開關電晶體.,其係於上述發光期間將上述電容元件之另一 端連接於丨述複數之傾斜波電壓輸入、線中對應的傾斜波電 壓輸入線。 又,本發明之一樣態可為,上述像素選擇機構具有複數 之開關控制'線,且上述第1開m曰曰體與上述第2開關電晶 體之導電型不同;上述各像素之上述第丨開關電晶體之閘 極電極、與上述第2開關電晶體之閘極電極為相同開關控 制線,且連接於上述複數之開關控制線中對應的開關控制 線,於上述寫入期間,使各像素之上述第i開關電晶體導 通、上述第2開關電晶體斷開;且於上述發光期間,使各 像素之上述第1開關電晶體斷開、上述第2開關電晶體導 通。 又,本發明之一樣態可為,上述發光元件為有機發光二 極體元件。 藉由本申請案所揭示之發明中具代表性者所得之效果, 其簡單說明如下。 根據本發明之圖像顯示裝置,可減少電源電壓之電壓位 準之變動所致之發光元件之發光亮度的變動。 【實施方式】 以下,茲佐參考圖式詳細說明本發明之實施形態。 135130.doc 13 200933571 —二,說明實施形態之全圖中’具有同—機能者被賦與同 符號’且省略其重複說明。 圖1係本發明之形態之圖像顯示裝置之有機肛顯示面板 之概略構成的方塊圖,其係適用於行動電話之有訊顯示 面板之概略構成的圖。 如圓1所示,於有機EL顯示面板之顯示區❹以矩陣狀 -、置有像素1,且像素i於垂直方向連接有信號線(Dm), ❹ ❹ 於水平方向連接有像素„控制線9、點亮控制開關控制 線13、復位開關控制線^。 信號線(DAT)之-端連接於圖像電麼生成電路21。且, 像素開關控制線9、點亮控制開關控制、及復位開關 控制線11之一端連接於掃描電路22。 又各像素1於垂直方向連接有電源線(PWR),電源線 (PWR)於上端連接於主電源線24,且輸出到設於面板左右 連接端者,各像素!於水平方向連接有三角波線 (SWP) ’且三角波線(swp)之一端連接於三角波生成電路 23 ° 另,為將圖式簡略化,圖i僅記有9個像素,實際上,例 如’像素數係由32G(水平)xRGBx24喉直)之像素構成。 此外,顯示區域内之像素、掃描電路22、三角波生成電路 23全體皆由使用形成於同一玻璃基板上之多晶石夕之薄膜電 晶體(S^TFT)形成作為半導體層,而圖像電壓生成電路^ 係以將驅動1C晶片搭载於玻璃基板上之形式設置。 其次,說明圖1所示之像素i的構成。圖2係說明^之像 135130.doc -14- 200933571 素ϊ之構造的電路構成圖。 各像素1中設有底部發射型有機電致發光元件(以下稱為 有機EL元件)2,該有機EL元件2之陰極電極連接於共通電 極3,陽極電極經由p型薄膜電晶體(以下稱為點亮控制開 關)2” pf 臈電晶體(以下稱為驅動連接於電源線 (PWR) 〇 於驅動TFT4之閘極電極與汲極電極之間連接有n型薄膜 電晶體(以下稱為復位開關5)。 、 。又驅t?TFT4之閘極電極連接於保持電容器(本發明之 電谷元件)6之—端,於保持電容器6之另—端,經由p型薄 膜電阳體(以下稱為像素開關)7而連接於信號線(dat),並 經由η型薄膜電晶體(以下稱為三角波開關而連接於三角 波線(SWP)。 另,復位開關5藉由復位開關控制線11控制;點亮控制 開關12藉由點亮控制開關控制線13控制;像素開關7及三 角波開關8藉由像素開關控制線9控制。 其次,使用圖3〜圖5說明本實施形態之圖像顯示裝置的 動作。 圖3係本實施形態之有機EL顯示面板之第η列、第 列之像素1之動作的時序圖表。 圖3顯示1幀(Frame)期間之像素開關控制線9、點亮控制 開關控制線1 3、復位開關控制線丨丨、三角波線(s wp)之電 壓位準的變化’(n)表示第n列之像素行的信號。此外,如 圖中VH、VL所記,上表示高電壓,下表示低電壓。 135130.doc 15 200933571 再者,像素開關控制線9上之〇N、OFF表示像素開關7之 ON狀態、〇FF狀態;同樣的,點亮控制開關控制線13上之 ON、OFF表示發光控制開關12之on狀態、〇FF狀態;復 位開關控制線11上之ON、OFF表示復位開關5之ON狀態、 • 〇FF狀態。另,像素開關7與三角波開關8由於係由導電型 : 互不相同之薄膜電晶體構成,故像素開關7為ON狀態時, • 二角波開關8為0FF狀態;像素開關7為OFF狀態時,三角 波開關8為ON狀態。 選定寫入之像素(此處為第η列之顯示行的像素,起初 於時刻tO ’像素開關控制線9為低位準(以下稱為l位準), 點焭控制開關控制線13為L位準,復位開關控制線u為高 位準(以下稱為H位準),且各像素開關7為〇N狀態,三角 波開關8為OFF狀態’點亮控制開關12為on狀態,及復位 開關5為ON狀態。 該狀態下’藉由使點亮控制開關12與復位開關5成on狀 φ 態’經由連接二極體之驅動TFT4與點亮控制開關12,使源 自電源線(PWR)之電流流通於有機el元件2。 其後,於時刻tl,若點亮控制開關控制線13為η位準, ‘ 點亮控制開關12為OFF狀態,則於驅動TFT4之汲極電極成 .臨限值電壓(Vth)之時點,驅動TFT4成斷開(OFF狀態)。 該狀態下’對信號線(DAT)輸入圖像電壓。且,由於保 持電容器6之一端經由像素開關7輸入信號線(DAT),故使 圖像電壓與臨限值電壓(Vth)之差值保持於保持電容器6。 其後’於時刻t2,藉由復位開關控制線丨丨成l位準,復 135130.doc 200933571 位開關5成OFF狀態,使圖像電壓與臨限值電壓(Vth)之差 值保持於保持電容器6,完成向像素1之圖像電壓的寫入。 其後,於時刻t3,若寫入移動到下一(η+ι)列之顯示行之 像素1 ’則像素開關控制線9成Η位準,像素開關7成◦叩狀 態’及,三角波開關8切換為ON狀態。 此處’對三角波線(SWP)施加三角波狀之掃描電壓,該 三角波電壓經由三角波開關8被輸入保持電容器6之一端, 且在該狀態下’由於點亮控制開關控制線1 3為L位準,故 點亮控制開關12為ON狀態。 由於三角波線(SWP)之三角波電壓與預先寫入之圖像電 壓相等時’經由保持電容器6使臨限值電壓(vth)再現於驅 動TFT4之閘極,故根據已寫入之圖像電壓確定有機孔元 件2之發光期間。藉此,由於有機el元件2於對應圖像電壓 之發光期間以對應圖像電壓之發光強度發光,故觀察者會 辨識出有階度之圖像。 另’本實施形態中係於發光期間施加三角波電壓,然而 於發光期間所施加之電壓亦可為電壓位準隨時間變化之傾 斜波電壓,如梯形波電壓、鋸齒狀波電壓等。 此處,對寫入時之驅動TFT4之閘極電壓之變化進行更 詳細說明。 圖4係本實施形態之有機el顯示面板之對像素寫入圖像 電壓時之動作時序圖表。圖4顯示1幀期間之像素開關控制 線9、點亮控制開關控制線13、復位開關控制線U、及三 角波線(SWP)之變化,(η)表示第η列之像素行的信號。 135130.doc -17- 200933571 此外,如圖中VH、VL所記,上表示高電壓,下表示低 電廢。該荨定義與圖3相同。 再者於圖4中,作為Gate of 丁FT4之顯示寫入時之驅動 TFT4之閘極電壓的變化。 選定寫入之像素1,起初於時刻t〇,藉由點亮控制開關 12與復位開關5成on狀態,經由連接二極體之驅動TFT4與 點亮控制開關丨2,使源自電源線(PWR)之電流流通於有機 EL元件2。此時,驅動TFT4之閘極電壓被降低到與有機el 元件2之電流相容的閘極電壓。(期間η) 其後,於時刻tl,若點亮控制開關12成〇FF狀態,則驅 動TFT4之汲極電極趨向於從電源線(pWR)之電壓中 減去臨限值電壓(Vth)之電壓值而飽和,且該時點之驅動 TFT4成斷開,即0FF狀態。(期間ΙΠ) 其後,於時刻t2,藉由復位開關5成〇FF狀態,使圖像電 壓與臨限值電壓(Vth)之差值保持於保持電容器6,完成對 像素1之圖像電壓的寫入。(期間IV) 之後,於時刻t3,若寫入移動到下一列之像素丨,則像 素開關7切換為〇FF狀態,三角波開關8切換為〇N狀態、對 三角波線(SWP)施加有三角波狀之掃描電壓,該三角波電 壓經由二角波開關8而輸入保持電容器6之一端。 此時驅動TFT4之閘極電壓對應施加於三角波線(swp)之 電壓與預先寫入之圖像電壓之差分而偏移,但當三角波線 (SWP)之三角波電壓與預先寫入之圖像電壓相等時,由於 在驅動TFT4之閘極電極經由保持電容器6使臨限值電壓 135130.doc -18- 200933571 (Vth)再現,故有機EL元件2導通》(期間vi) 將該有機EL元件2之發光期間作為ILM期間顯示於圓4。 藉由根據寫入各像素之圖像電壓調變該ILM期間長度,即 可於有機EL顯示面板顯示圖像。 圖5係本實施形態之有機EL顯示面板之發光情形的詳 圖。 此處配合使用圖3說明之各信號的時序,將三角波線 (SWP)上之三角波電壓之變化、與此同步之有機el元件2 之發光強度表示為亮度。 如圖5所示,本實施形態中,有機EL元件2於圖4之VI期 間導通,但其發光強度係依循三角波線(SWP)上之三角波 電壓之變化,故亮度不飽和。其原因純粹為驅動TFT4係於 圖8所示之飽和區域(Sre)驅動。 薄膜電晶體於圖8所示之飽和區域(Sre)中動作時,薄膜 電晶體之汲極電壓(Vd)及汲極電流(Id)成圖8所示之負荷曲 線(Loa)上之汲極電壓(Vd)及汲極電流(Id)。 因此,本實施形態與在線性區域(Lre)中使驅動TFT驅動 之如先前之有機EL顯示面板相比較,可減小流通於有機 EL元件2之電流的變動。即,本實施形態中,由於有機el 元件2之發光強度基本上藉由三角波線(SWP)上之三角波電 壓控制,故可減小相對於電源線(PWR)之電壓位準之變動 之EL元件2之發光強度的變動。 如上說明,先前之有機EL顯示面板,其電源線(PWR)之 電壓位準之變動係直接調變有機EL元件2之電源電壓,而 135130.doc -19- 200933571 本實施形態中,電源線(PWR)之電壓位準之變動僅在於調 變驅動TFT4之源極·沒極間電壓。 另’上述之實施形態中,顯示區域内之像素1、掃描電 路22、三角波生成電路23皆使用形成於同一玻璃基板上之 - 多晶Si_TFT元件,且圖像電壓生成電路21係以將驅動1(:晶 . 片搭載於玻璃基板上之形式構成。‘ 然而,掃描電路22、三角波生成電路23亦可藉由與圖像 電壓生成電路21同一或個別之驅動1C晶片實現。此外,驅 動TFT4、復位開關5、像素開關7、三角波開關8、及點亮 控制開關12亦可使用將各半導體層使用非晶矽之非晶矽薄 臈電晶體而構成於玻璃基板上。 再者反之,亦可由多晶Si-TFT元件構成圖像電壓生成電 路21。此外,圖像電壓生成電路21亦可藉由組合搭載於玻 璃基板上之驅動1C晶片、及使用形成於玻璃基板上之多晶 Si-TFT元件之選擇開關或掃描電路等實現。 參又,不限於多晶矽,電晶體亦可使用其他有機/無機半 導體薄膜,或使用表面具有絕緣性之其他基板來代替玻璃 基板。 再者,作為發光元件不限於有機EL元件,當亦可使用無 機EL元件或FED(Field-Emission Device :場發射器件)等一 般發光元件。 以上’基於上述實施形態具體說明了本發明者所為之發 明’然而本發明不限於上述實施形態,在不脫離其要旨之 範圍内可進行各種更改。 J35130.doc • 20· 200933571 【圖式簡單說明】 圖1係本發明之實施形態之圖像顯示裝置之有機EL顯示 面板之概略構成的方塊圖〇 圖2係說明圖1之像素之構造的電路構成圖。 圖3係說明本發明之實施形態之有機EL顯示面板之第〇 列、第(η+1)列之像素動作的時序圖表。 圖4係本發明之實施形態之有機EL顯示面板之對像素寫 入圖像電壓時之動作時序圖表。 圖5係本發明之形態之有機EL顯示面板之發光情形的詳 圖。 圖6Α係說明先前之有機EL顯示面板之像素構造的電路 構成圖。 圖6B係圖6A之像素開關控制線、三角波開關控制線、 復位開關控制線之電壓位準的圖。 圖7係說明有機發光二極體元件之電壓(Vd)_電流(ι幻特 性的模式圖。 圖8係說明薄膜電晶體之電壓(Vd)_電流(Id)特性的模式 圖。 【主要元件符號說明】 9 像素開關控制線 11 復位開關控制線 13 點亮控制開關控制線 SWP 三角波線 135I30.doc •21 ·The voltage of the off control line 209 becomes the L level, the pixel switch 207 is switched to the 0FF state, and the voltage of the two-way switch control line 2 is set to the H level, and the triangular wave switch 208 is turned to the ON state. Thereby, a triangular wave-shaped scanning voltage (triangle wave voltage) from a triangular wave line (SWP) is applied to the other end of the holding capacitor 206. The triangular wave voltage substantially contains a signal voltage. When the triangular wave voltage is equal to the first written voltage, the previous input midpoint voltage is reproduced on the gate electrode of the driving TFT 2?4 by the operation of the holding capacitor 206. That is, by the magnitude relationship between the triangular wave voltage and the written signal power, the ΟΝ/OFF of the inverter circuit that drives the TFT 204 and the organic EL element 202 as the output terminal can be controlled in time 135130.doc 200933571 . Since the organic EL element 202 is brightly lit when the inverter circuit is turned on, and the organic EL element 202 is turned off when the inverter circuit is turned off, each pixel can be controlled by controlling the signal voltage with respect to a specific triangular wave voltage. The image is displayed on the organic EL display panel during the lighting period in one frame period. SUMMARY OF THE INVENTION The pixels shown in FIG. 6A are actually arranged in a matrix in a plurality. If the number of pixels is 320 (horizontal) x RGBx240 (vertical), 240 organic EL elements 202 are connected to one power supply line (PWR) shown in Fig. 6A. Further, since the power supply line (PWR) also has a certain resistance component, the voltage level on the power supply line (PWR) varies depending on the number of the organic EL elements 202 in the lit state. In addition, the voltage level on the power line (PWR) also varies with noise. On the other hand, in the circuit shown in Fig. 6A, the driving TFT 204 operates in the linear region (Lre) shown in Fig. 8. That is, the driving TFT 204 of Fig. 6A operates as a switching operation of ΟΝ/OFF. Therefore, in the ON state, the driving TFT 204 of Fig. 6A applies a power supply voltage to the anode electrode of the organic EL element 202 with a power supply line (PWR). Further, Fig. 8 is a schematic view showing the voltage (VD)-current (Id) characteristics of the thin film transistor, and in Fig. 8, Lre is a linear region, and Sre is a saturated region. In other words, in the conventional organic EL display device, since the driving of the organic EL element 202 is substantially the value of ΟΝ/OFF, the power supply due to noise or the resistance component of the power supply line (PWR) 135130.doc 200933571, etc. The fluctuation of the voltage level on the line (PWR) causes the organic EL element 202 to be affected. Fig. 7 is a schematic view showing voltage (VD)-current (ID) characteristics of an organic EL element (organic light-emitting diode element), and Fig. 7A shows a voltage of an organic EL element which is above the diode characteristics. - Current Characteristics, Fig. 7B shows the voltage-current characteristics of the organic EL element in which the rising edge of the polar body characteristic is imminent. As shown in the schematic diagram of Fig. 7, the organic EL element represents a diode characteristic. Therefore, the current flowing through the organic EL element 202 fluctuates by the fluctuation of the voltage level on the power supply line (PWR), and the luminance of the organic EL element 2〇2 fluctuates. As shown in Fig. 7, if the current flowing through the organic EL element in a steady state is (1〇) 'when the power supply voltage fluctuates (±Δν)', the organic EL element having the diode characteristics shown in Fig. 7 is obtained. The current varies by (±Ma), and the current of the organic EL element having the diode characteristics shown in the figure is changed by (±Aib). φ and 'as can be easily understood from Fig. 7, the organic EL element having the diode characteristics shown in Fig. 7B has a large current flowing in comparison with the organic hole element having the characteristics of the diode shown in Fig. 7A. change. And the 'previously' organic EL element* having the characteristics of the diode shown in FIG. 7A is relatively common, and in recent years, the organic EL element having the characteristics of the diode shown in FIG. 7B has been gradually adopted, and the organic In the E; L display device, the current flowing through the organic EL element 202 greatly fluctuates due to the fluctuation of the voltage level on the power supply line (PWR), and the luminance of the organic EL element 202 also largely changes. 135l30.doc -10- 200933571 In this way, the organic EL display device of the prior art has a variation in the voltage level on the power supply line (pWR), so that the current flowing through the organic EL element 202 fluctuates, and the organic EL element 202 is also The problem of the change in the brightness of the light. The present invention has been made to solve the above problems of the prior art, and an object of the present invention is to provide a technique for reducing variations in the light-emitting luminance of a light-emitting element due to fluctuations in the voltage level of a power supply voltage in an image display device. The above and other objects of the present invention will be apparent from the description and appended claims. A brief description of the representative of the invention disclosed in the present application is as follows. ', IV Μ π 攸 攸 攸 彳冢 彳冢 彳冢 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The tilting wave voltage, wherein each of the pixels has an illuminating means, a driving transistor for driving the illuminating means, and a capacitor for connecting to the closed electrode of the driving transistor, and the other end of the capacitor element is The image voltage 'input during the writing period is input to the oblique wave during the light-emitting period, and the light-emitting intensity at the time of lighting of the light-emitting means continuously changes during the light-emitting period. Further, the image display device of the present invention is characterized in that: a plurality of pixels are provided; and a plurality of signal lines are connected to the image of the plurality of pixels, and the image is input to the image. The plurality of lines have a current-driven light-emitting element, a driving transistor connected between the power supply line and the light-emitting element, and One end is connected to the capacitive element of the gate electrode of the driving transistor; the image voltage is input to the other end of the capacitive element during the writing period, and the voltage level is followed during the light-emitting period during the writing period. The time-varying ramp wave voltage is input to the other end of the capacitor element, and the light-emitting element is illuminated when the light-emitting element is turned on. The intensity is continuously changed during the light-emitting period. Φ X '本一明的样态4' The pixel selection mechanism has a plurality of scanning lines, each of the pixels having a dummy electrode connected to the driving transistor and the light emitting element connecting the driving transistor And a reset transistor between the electrodes, wherein the idle electrode of the reset transistor is connected to a corresponding scan line of the plurality of scan lines. Further, in the same aspect of the present invention, the pixel selection means may have a plurality of dot-free control lines; each of the pixels has a lighting transistor connected between the driving transistor and the light-emitting element; and each of the lighting Transistor® The gate electrode is connected to the corresponding lighting control line in the above multiple lighting control lines. 2: In the same state of the present invention, the writing period is to a third period, and the reset period of each of the pixels is turned on in the first period and the second period. I·, +. in the above writing period. u Χ ^ The third period is disconnected from the light-emitting period; the light-emitting diodes are electrically connected to the second period and the third period in the writing period during the light-emitting period, the writing period, and the period Disconnected during the period. I35130, doc -12- 200933571 In another aspect of the present invention, each of the pixels may have a plurality of oblique wave voltage input lines for inputting the ramp wave voltage, and each of the pixels has a first switching transistor. And connecting the other end of the capacitive element to a corresponding one of the plurality of signal lines during writing; and the second switching transistor, wherein the other end of the capacitive element is connected to the light emitting period The complex ramp voltage input and the corresponding ramp voltage input line in the line are described. Furthermore, in the same aspect of the present invention, the pixel selection means may have a plurality of switching control 'wires, and the first opening m body is different from the second switching transistor; and the first pixel of each of the pixels a gate electrode of the switching transistor and a gate electrode of the second switching transistor are the same switch control line, and are connected to a corresponding switch control line of the plurality of switch control lines, and each pixel is made during the writing period The ith switch transistor is turned on, and the second switch transistor is turned off; and during the illuminating period, the first switching transistor of each pixel is turned off, and the second switching transistor is turned on. Further, in the aspect of the invention, the light-emitting element may be an organic light-emitting diode element. The effects obtained by the representative of the invention disclosed in the present application are briefly described below. According to the image display device of the present invention, fluctuations in the light-emitting luminance of the light-emitting element due to fluctuations in the voltage level of the power supply voltage can be reduced. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. 135130.doc 13 200933571 - 2, in the entire description of the embodiment, the same functions are given the same symbols, and the repeated description thereof is omitted. Fig. 1 is a block diagram showing a schematic configuration of an organic anal display panel of an image display device according to a preferred embodiment of the present invention, which is applied to a schematic configuration of a communication display panel of a mobile phone. As shown by the circle 1, the display area of the organic EL display panel is in a matrix shape, and the pixel 1 is placed, and the pixel i is connected to the signal line (Dm) in the vertical direction, and the pixel is connected to the horizontal direction. 9. Light control switch control line 13, reset switch control line ^. The end of the signal line (DAT) is connected to the image generation circuit 21. Moreover, the pixel switch control line 9, the lighting control switch control, and the reset One end of the switch control line 11 is connected to the scan circuit 22. Further, each pixel 1 is connected with a power line (PWR) in a vertical direction, and the power line (PWR) is connected to the main power line 24 at the upper end, and is output to the left and right connection ends of the panel. Each pixel has a triangular wave line (SWP) connected in the horizontal direction and one end of the triangular wave line (swp) is connected to the triangular wave generating circuit 23 °. In order to simplify the drawing, only i pixels are recorded in FIG. In the above, for example, the number of pixels is composed of pixels of 32 G (horizontal) x RGB x 24 throat. Further, the pixels in the display region, the scanning circuit 22, and the triangular wave generating circuit 23 are all made of polycrystalline silicon formed on the same glass substrate. Evening thin The transistor (S^TFT) is formed as a semiconductor layer, and the image voltage generating circuit is provided in such a manner that the driving 1C wafer is mounted on the glass substrate. Next, the configuration of the pixel i shown in Fig. 1 will be described. Description of the image of the image of 135130.doc -14- 200933571 The structure of the structure of the element is provided. Each of the pixels 1 is provided with a bottom emission type organic electroluminescence element (hereinafter referred to as an organic EL element) 2, and the organic EL element 2 is provided. The cathode electrode is connected to the common electrode 3, and the anode electrode is connected to the gate of the driving TFT 4 via a p-type thin film transistor (hereinafter referred to as a lighting control switch) 2" pf 臈 transistor (hereinafter referred to as a driving connection to a power supply line (PWR) An n-type thin film transistor (hereinafter referred to as a reset switch 5) is connected between the electrode and the drain electrode. The gate electrode of the TFT4 is connected to the terminal of the holding capacitor (the electric valley element of the present invention) 6. The other end of the holding capacitor 6 is connected to the signal line (dat) via a p-type thin film electro-optical body (hereinafter referred to as a pixel switch) 7, and is connected to the n-type thin film transistor (hereinafter referred to as a triangular wave switch). Triangle wave line (SWP). The reset switch 5 is controlled by the reset switch control line 11; the lighting control switch 12 is controlled by the lighting control switch control line 13; the pixel switch 7 and the triangular wave switch 8 are controlled by the pixel switch control line 9. Next, using FIG. Fig. 5 is a timing chart showing the operation of the image display device of the present embodiment. Fig. 3 is a timing chart showing the operation of the nth column and the column 1 of the organic EL display panel of the embodiment. Fig. 3 shows a frame. The pixel switch control line 9, the lighting control switch control line 13, the reset switch control line 丨丨, and the voltage level change of the triangular wave line (s wp) during the period '(n) indicate the signal of the pixel row of the nth column. Further, as indicated by VH and VL in the figure, the upper side indicates a high voltage and the lower side indicates a low voltage. 135130.doc 15 200933571 Furthermore, 〇N and OFF on the pixel switch control line 9 indicate the ON state and 〇FF state of the pixel switch 7, and similarly, the ON and OFF on the lighting control switch control line 13 indicate the light emission control switch. 12 on state, 〇FF state; ON and OFF on the reset switch control line 11 indicate the ON state of the reset switch 5, and 〇FF state. In addition, since the pixel switch 7 and the triangular wave switch 8 are formed of a thin film transistor having different conductivity types: mutually different, when the pixel switch 7 is in the ON state, the ?2 switch 8 is in the 0FF state; when the pixel switch 7 is in the OFF state The triangular wave switch 8 is in an ON state. The pixel to be written is selected (here, the pixel of the display row of the nth column, initially at time t0', the pixel switch control line 9 is at a low level (hereinafter referred to as a 1-level), and the point control switch control line 13 is an L-bit. The reset switch control line u is at a high level (hereinafter referred to as H level), and each pixel switch 7 is in a 〇N state, the triangular wave switch 8 is in an OFF state, the lighting control switch 12 is in an on state, and the reset switch 5 is In this state, the current from the power supply line (PWR) is made by the driving TFT 4 connected to the diode and the lighting control switch 12 by "turning the lighting control switch 12 and the reset switch 5 into a φ state". The organic EL element 2 is circulated. Thereafter, at time t1, if the lighting control switch control line 13 is at the n level, and the lighting control switch 12 is in the OFF state, the drain electrode of the driving TFT 4 is formed. At the time of the voltage (Vth), the driving TFT 4 is turned off (OFF state). In this state, the image voltage is input to the signal line (DAT), and since one end of the holding capacitor 6 is input to the signal line (DAT) via the pixel switch 7. Therefore, the difference between the image voltage and the threshold voltage (Vth) is guaranteed. After holding the capacitor 6. At the time t2, by resetting the switch control line to the l level, the 135130.doc 200933571 bit switch 5 is turned OFF, so that the image voltage and the threshold voltage (Vth) The difference is held in the holding capacitor 6, and the writing of the image voltage to the pixel 1 is completed. Thereafter, at time t3, if the pixel 1' of the display line moving to the next (n+ι) column is written, the pixel switch The control line 9 is in the Η position, the pixel switch 7 is in the ◦叩 state ' and the triangular wave switch 8 is switched to the ON state. Here, a triangular wave-shaped scanning voltage is applied to the triangular wave line (SWP), and the triangular wave voltage is applied via the triangular wave switch 8 One end of the holding capacitor 6 is input, and in this state 'Because the lighting control switch control line 13 is at the L level, the lighting control switch 12 is in the ON state. The triangular wave voltage of the triangular wave line (SWP) is pre-written. When the image voltages are equal, the threshold voltage (vth) is reproduced on the gate of the driving TFT 4 via the holding capacitor 6, so that the light-emitting period of the organic hole element 2 is determined based on the written image voltage. El component 2 corresponds The light-emitting intensity of the image voltage is emitted at the light-emitting intensity of the corresponding image voltage, so the observer recognizes the image having the gradation. In the present embodiment, the triangular wave voltage is applied during the light-emitting period, but the voltage applied during the light-emitting period is applied. It can also be a ramp voltage that varies with time in voltage level, such as trapezoidal wave voltage, sawtooth wave voltage, etc. Here, the change of the gate voltage of the driving TFT 4 at the time of writing will be described in more detail. The operation timing chart when the image voltage is written to the pixel by the organic el display panel of the embodiment. FIG. 4 shows the pixel switch control line 9, the lighting control switch control line 13, the reset switch control line U, and the triangle during one frame period. The change of the wave line (SWP), (η) represents the signal of the pixel row of the nth column. 135130.doc -17- 200933571 In addition, as indicated by VH and VL in the figure, the upper side indicates a high voltage and the lower side indicates a low electric waste. This definition is the same as in Fig. 3. Further, in Fig. 4, the gate voltage of the driving TFT 4 is changed as the display of the Gate of FT4. The pixel 1 to be selected is initially turned on at the time t 〇 by the lighting control switch 12 and the reset switch 5, and is driven from the power supply line via the driving TFT 4 connected to the diode and the lighting control switch 丨2 ( The current of PWR) flows through the organic EL element 2. At this time, the gate voltage of the driving TFT 4 is lowered to the gate voltage compatible with the current of the organic EL element 2. (Period η) Thereafter, at time t1, if the control switch 12 is turned on in the FF state, the drain electrode of the driving TFT 4 tends to subtract the threshold voltage (Vth) from the voltage of the power supply line (pWR). The voltage value is saturated, and the driving TFT 4 at this point is turned off, that is, the 0FF state. (Period ΙΠ) Thereafter, at time t2, by resetting the switch 5 to the FF state, the difference between the image voltage and the threshold voltage (Vth) is held in the holding capacitor 6, and the image voltage for the pixel 1 is completed. Write. After (period IV), at time t3, when the pixel 移动 is moved to the next column, the pixel switch 7 is switched to the 〇FF state, the triangular wave switch 8 is switched to the 〇N state, and the triangular wave line (SWP) is applied with a triangular wave shape. The scanning voltage is input to one end of the holding capacitor 6 via the two-way switch 8. At this time, the gate voltage of the driving TFT 4 is shifted corresponding to the difference between the voltage applied to the triangular wave line (swp) and the image voltage written in advance, but the triangular wave voltage of the triangular wave line (SWP) and the image voltage written in advance. When it is equal, since the threshold voltage 135130.doc -18-200933571 (Vth) is reproduced via the holding capacitor 6 at the gate electrode of the driving TFT 4, the organic EL element 2 is turned on (period vi). The period of illumination is shown as circle 4 during the ILM period. The image can be displayed on the organic EL display panel by modulating the length of the ILM period in accordance with the image voltage written to each pixel. Fig. 5 is a detailed view showing the state of light emission of the organic EL display panel of the embodiment. Here, the timing of each signal described with reference to Fig. 3 is used, and the change in the triangular wave voltage on the triangular wave line (SWP) and the luminous intensity of the organic EL element 2 synchronized thereto are expressed as luminance. As shown in Fig. 5, in the present embodiment, the organic EL element 2 is turned on during the period of Fig. 4, but the luminance is in accordance with the change of the triangular wave voltage on the triangular wave line (SWP), so that the luminance is not saturated. The reason for this is purely that the driving TFT 4 is driven by the saturation region (Sre) shown in Fig. 8. When the thin film transistor operates in the saturation region (Sre) shown in FIG. 8, the gate voltage (Vd) and the drain current (Id) of the thin film transistor become the drain on the load curve (Loa) shown in FIG. Voltage (Vd) and drain current (Id). Therefore, in the present embodiment, the fluctuation of the current flowing through the organic EL element 2 can be reduced as compared with the conventional organic EL display panel in which the driving TFT is driven in the linear region (Lre). That is, in the present embodiment, since the luminous intensity of the organic EL element 2 is basically controlled by the triangular wave voltage on the triangular wave line (SWP), the EL element which can be changed with respect to the voltage level of the power supply line (PWR) can be reduced. 2 changes in luminous intensity. As described above, in the conventional organic EL display panel, the fluctuation of the voltage level of the power supply line (PWR) directly modulates the power supply voltage of the organic EL element 2, and 135130.doc -19- 200933571 in this embodiment, the power supply line ( The voltage level change of PWR) is only to modulate the source-no-pole voltage of the driving TFT 4. In the above embodiment, the pixel 1, the scanning circuit 22, and the triangular wave generating circuit 23 in the display region use a polycrystalline Si_TFT element formed on the same glass substrate, and the image voltage generating circuit 21 is to drive 1 (The crystal plate is mounted on a glass substrate. However, the scanning circuit 22 and the triangular wave generating circuit 23 can be realized by driving the 1C wafer in the same or individual manner as the image voltage generating circuit 21. Further, the driving TFT 4, The reset switch 5, the pixel switch 7, the triangular wave switch 8, and the lighting control switch 12 may be formed on the glass substrate by using an amorphous germanium thin germanium transistor for each semiconductor layer. The polycrystalline Si-TFT device constitutes the image voltage generating circuit 21. Further, the image voltage generating circuit 21 can also use a driving 1C wafer mounted on a glass substrate and a polycrystalline Si-TFT formed on the glass substrate. The component selection switch or the scanning circuit is realized. The reference is not limited to polysilicon, the transistor can also use other organic/inorganic semiconductor films, or the surface is insulated. In addition, the other light-emitting element is not limited to the organic EL element, and a general-purpose light-emitting element such as an inorganic EL element or an FED (Field-Emission Device) can be used. The invention made by the inventors of the present invention has been described. However, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit and scope of the invention. J35130.doc • 20· 200933571 [Simplified description of the drawings] FIG. 2 is a block diagram showing a schematic configuration of an organic EL display panel of an image display device according to an embodiment of the present invention. FIG. 3 is a view showing a circuit configuration of a structure of a pixel of FIG. 1. FIG. 3 is a view showing an organic EL display panel according to an embodiment of the present invention. FIG. 4 is a timing chart showing an operation of writing an image voltage to a pixel of an organic EL display panel according to an embodiment of the present invention. FIG. 5 is a timing chart of the present invention. A detailed view of the light-emitting state of the organic EL display panel of the form. Fig. 6 is a circuit diagram showing the pixel structure of the prior organic EL display panel. Fig. 6 is a diagram showing the voltage level of the pixel switch control line, the triangular wave switch control line, and the reset switch control line. Fig. 7 is a schematic diagram showing the voltage (Vd)_current of the organic light emitting diode element. Fig. 8 is a schematic view showing the voltage (Vd)_current (Id) characteristics of the thin film transistor. [Main component symbol description] 9 pixel switch control line 11 reset switch control line 13 lighting control switch control line SWP triangular wave line 135I30. Doc •21 ·