200928460 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種光學濾器以及其之製造方法和具備 該光學濾器之光學機器；尤其關於一種光學濾器，其具有 多層膜，該多層膜係由具有使光穿透之性質之介電質膜與 吸收光之吸收膜所積層而成，以及該光學濾器之製造方法 和具備該光學濾器冬光學機器。 【先前技術】 於照相機、望遠鏡、投影機等光學機器係使用有用以 使所要的光穿透之光學濾器。光學濾器係具有使特定性質 (例如特定波長範圍）的光穿透，並使其以外之光無法穿透之 性質的光學元件’已知有例如偏光濾器、色彩校正濾器等。 光學濾器之一種有使可見光區域波長之穿透光衰減之 吸收型ND(Neutral Density)濾器。ND濾器（亦稱為減光器） 係一種具有使穿透濾器之光量減少之性質之光學濾器具 有於可見光區域全範圍内顯示大致均一之穿透率之性質。 ND濾器之使用目的例如野外攝影等被攝影物亮度高的情況 時，藉由安裝於照相機透鏡前面來減少入射至透鏡之入射 光以使得亮度適當等。 以往ND據器係藉由將3種以上之金屬、金屬化合物 所構成之材料成膜於基板上所製造而成（參照例如專利文獻 1 〜4) 〇 專利文獻1之ND滹器係具有由介電質膜與光吸收膜 所積層而成之構造，且介電質膜係使用Si〇2與A⑽此2 200928460 種材料，光吸收膜使用金屬Ti與其之氧化物TixOy。 專利文獻2之ND滤器係具有由吸收膜、抗反射層、最 外層所積層而成之構造，吸收膜係使用TixOy，抗反射層使 用Al2〇3，最外層使用MgF2。 專利文獻3之ND濾器係具有由金屬膜與Nb膜透過介 電質膜而積層形成之構造，其係使用A1合金（A1 + Ti)作為金 屬膜’介電質膜使用Si02，Nb膜使用Nb。 專利文獻4之ND濾器係具有薄膜基板表面形成有吸收 型多層膜、裏面形成有多層抗反射膜之構造，構成吸收型 多層膜之介電質層的材料係使用Si〇2、金屬膜層之材料係 使用Νι系合金’構成多層抗反射膜之構介電質層的材料係 使用Si〇2、金屬膜層之材料係使用Ta2〇5。 專利文獻1 :曰本專利特開2〇〇5_326687號公報（請求 項3、段落〇〇〇7、〇〇11、圖！等） 專利文獻2 :曰本專利特開2〇〇4_212462號公報（請求 項1〜3、段落〇〇11〜〇〇16、圖14等） 專利文獻3 :曰本專利特開2〇〇3 2〇76〇8號公報（請求 項1、3、7、段落〇〇2〇〜〇〇27、圖i等） 專利文獻4 ·曰本專利特開2〇〇6 178395號公報（請求 項1〜3、段落0020-0022、圖2等） 然而，以往之ND濾器因構成介電質膜之金屬元素與形 成吸收膜之金屬元素不同，故至少需I 3種以上的金屬作 為材料。 因此，例如藉由濺鍍等製造ND濾器時，以往之ND濾 200928460 器必須要使用至少3種之靶材料，ND濾器之製造所需要之 材料的花費會上昇。又，因靶材料的種類而靶的壽命等會 有不同’故使用越多種類的靶則製造管理越困難，用以製 品製造之管理花費會上昇，同時每批製品的光學特性易於 產生偏差且會導致製品精度降低。 【發明内容】 本發明之目的係提供一種構造簡單且製造花費低廉， 而每批之光學特性偏差少之光學濾器以及其之製造方法。 又，本發明另一目的係提供一種製品之製造花費低 廉’且每一製品之精度偏差少之光學機器。 上述課題係藉由本發明之光學濾器獲得解決，本發明 之光學濾器係基材表面形成有吸收光之多層膜之光學濾 器，其中： 該多層膜係具備介電質膜與吸收膜，該介電質膜係由 複數之膜所積層而成，該吸收膜形成於構成該介電質膜之 該複數膜之間之至少1處並具有吸收光之性質； 該介電質膜具有由第1金屬元素之氧化物、氮化物或 氮氧化物所構成之第丨膜及第2膜中之2種以上的膜所積 層而成之構成，該第2膜係由和該第1金屬元素相異之第2 金屬元素之氧化物、氮化物或氮氧化物、或該第1金屬元 素與該第2金屬元素所構成之合金之氧化物、氮化物或氮 氧化物所構成； 該吸收膜係含有該第1金屬元素以及該第2金屬元素 之一者或兩者。 200928460 如上所述，因為構成介電質膜之金屬元素與構成吸收 膜之金屬元素相同’故構成多層膜之金屬元素的種類少和 以往之3種以上的金屬元素所構成之光學濾器相比，多層 膜之構成簡單。又，因為介電質膜與吸收膜所含之金屬元 素相同，故可使於介電質膜與吸收膜成膜時之材料共通。 ❹BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical filter, a method of manufacturing the same, and an optical apparatus including the optical filter; and more particularly to an optical filter having a multilayer film composed of a multilayer film A dielectric film having a property of penetrating light and a light absorbing film are laminated, and a method for producing the optical filter and a winter optical device including the optical filter. [Prior Art] An optical device for use in an optical device such as a camera, a telescope, or a projector to penetrate a desired light is used. The optical filter is an optical element having a property of penetrating light of a specific property (e.g., a specific wavelength range) and making it impossible to penetrate light. For example, a polarizing filter, a color correction filter, or the like is known. One of the optical filters has an absorption type ND (Neutral Density) filter that attenuates the transmitted light of the wavelength in the visible light region. An ND filter (also known as a dimmer) is an optical filter device having the property of reducing the amount of light passing through the filter to exhibit a substantially uniform transmittance over the entire range of the visible light region. The purpose of use of the ND filter is, for example, when the brightness of the subject is high, such as in field photography, by reducing the incident light incident on the lens by attaching it to the front of the camera lens so that the brightness is appropriate. In the related art, the ND device is produced by forming a material composed of three or more kinds of metals and metal compounds on a substrate (see, for example, Patent Documents 1 to 4). The structure of the electric film and the light absorbing film is laminated, and the dielectric film is made of Si 2 and A (10), and the light absorbing film is made of metal Ti and its oxide TixOy. The ND filter of Patent Document 2 has a structure in which an absorbing film, an antireflection layer, and an outermost layer are laminated. The absorbing film is TixOy, the antireflection layer is Al2〇3, and the outermost layer is MgF2. The ND filter of Patent Document 3 has a structure in which a metal film and a Nb film are formed by a dielectric film, and an A1 alloy (A1 + Ti) is used as the metal film. The dielectric film is made of SiO 2 and the Nb film is made of Nb. . The ND filter of Patent Document 4 has a structure in which an absorption type multilayer film is formed on the surface of a film substrate, and a multilayer anti-reflection film is formed on the surface thereof, and a material constituting the dielectric layer of the absorption type multilayer film is Si 2 , a metal film layer. The material used is a material of a dielectric layer which constitutes a multilayer anti-reflection film using a Νι-based alloy. Ta 2 〇 5 is used as the material of the Si 〇 2 and the metal film layer. Patent Document 1: Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. 2, No. 2, No. 2, No. 2, No. Item 1 to 3, paragraph 〇〇11 to 〇〇16, Fig. 14, etc.) Patent Document 3: Japanese Patent Laid-Open No. 2〇〇3 2〇76〇8 (Requests 1, 3, 7, and 〇) 〇2〇~〇〇27, Fig. i, etc.) Patent Document 4: Japanese Patent Laid-Open No. Hei 2 〇〇 6 178395 (Requests 1 to 3, Paragraphs 0020-0022, 2, etc.) However, the conventional ND filter Since the metal element constituting the dielectric film is different from the metal element forming the absorption film, at least three or more metals are required as the material. Therefore, when an ND filter is manufactured by sputtering or the like, for example, at least three types of target materials must be used in the conventional ND filter 200928460, and the cost of materials required for the manufacture of the ND filter increases. In addition, the life of the target varies depending on the type of the target material. Therefore, the more difficult it is to use the more diverse types of targets, the more difficult it is to manage the manufacturing of the product, and the management cost for manufacturing the product is increased, and the optical characteristics of each batch are prone to deviation. Will result in reduced accuracy of the product. SUMMARY OF THE INVENTION An object of the present invention is to provide an optical filter which is simple in construction and inexpensive to manufacture, and which has little variation in optical characteristics per batch, and a method of manufacturing the same. Further, another object of the present invention is to provide an optical apparatus which is inexpensive to manufacture and which has less variation in precision of each product. The above problem is solved by the optical filter of the present invention. The optical filter of the present invention has an optical filter on which a light-absorbing multilayer film is formed, wherein: the multilayer film is provided with a dielectric film and an absorption film, and the dielectric is provided. The plasma film is formed by laminating a plurality of films formed at at least one portion between the plurality of films constituting the dielectric film and having a property of absorbing light; the dielectric film having a first metal a structure in which two or more films of the second film and the second film composed of an oxide, a nitride or an oxynitride of the element are laminated, and the second film is different from the first metal element. An oxide, a nitride or an oxynitride of a second metal element, or an oxide, a nitride or an oxynitride of an alloy of the first metal element and the second metal element; the absorbing film containing the oxide One or both of the first metal element and the second metal element. As described above, since the metal element constituting the dielectric film is the same as the metal element constituting the absorption film, the type of the metal element constituting the multilayer film is smaller than that of the optical filter composed of three or more kinds of conventional metal elements. The composition of the multilayer film is simple. Further, since the dielectric film is the same as the metal element contained in the absorbing film, it can be made common to the material when the dielectric film and the absorbing film are formed. ❹
此情況時，該吸收膜較佳為由該第丨之金屬元素以及 該第2之金屬元素的一者或兩者所構成之金屬、或該金屬 之不完全氧化物、不完全氮化物或不完全氮氧化物所構成。 又’該金屬元素較佳為選自由碳、鎂、鋁、矽、鉻、 錳、鐵、鈷、鎳、辞、鍺、銼、鈮、鉬、銦 '錫、鈕、鎢 所構成群中之金屬元素。 再者該基材較佳為由選自由玻璃、聚碳酸酯、聚對 笨二甲酸乙二醇酯、聚甲基丙烯酸甲0旨、烯烴聚合物所構 成群中之1或2種以上之材料所構成。 上述課題係藉由本發明之光學濾器之製造方法獲得解 決’本發明之本發明之光學遽器之製造方法係上述任一段 所記載之光學濾器之製造方法’其係進行下述步驟·· 對該第1金屬元素所構成之第i乾進行賤擊以於該基 材表面形_ i金屬元素之薄膜’並對該薄膜進行氧、 I或氧、氣混合氣體之電i處理，藉此形成 膜形成步驟； 联&弟1 第金屬元素所構成之第2乾進行錢擊、或對該 =的薄膜2'進行_於該第1膜表面形成該第2 至屬元素的涛膜、每辞黎瓸- $該第1金屬兀素與該第2金屬元素所 200928460 構成之合金的薄膜，並對該薄膜進行氧、氣或氧氣混人氣 體之電聚處理，藉此形成該第2膜之第2膜形成步驟； 並具備下述步驟： 反覆進行該第1膜形成步驟與該第2膜形成㈣藉 此形成該介電質膜之介電質膜形成步驟； .㈣第^以及該第2乾之—者或兩者進行機擊以於 •該介電質膜表面形成薄膜，並視需要對該薄膜進行氧、氮 或氧氮混合氣體之電漿處理，藉此形成該吸收膜之吸收膜 y 形成步驟。 如上所述，因構成介電質膜之金屬元素與構成吸收媒 之金屬7G素相同，故構成多層膜之金屬元素的種類少且 多層膜之構成簡單。又，因介電質膜與吸收膜所含之金屬 元素相同，故可使於介電質膜與吸收膜成膜時之材料共通。 又，上述課題可經由本發明之光學濾器之製造方法而 獲得解決，本發明之光學濾器之製造方法係上述任一段所 0 記載之光學濾器之製造方法’係進行下述步驟： 使用内部具備有於各互相分離之位置至少設置一個之 成膜過程區域以及反應過程區域之真空容器，將該基材運 送至該成膜過程區域内，對該第i金屬元素所構成之第1 靶進行濺擊以於該基材表面形成該金屬元素薄膜，將形成 有該薄膜之該基材運送至該反應過程區域内，於該反應過 程區域内對該薄膜進行氧、氮或氧氮混合氣體之電漿處 理，藉此形成該第1膜之步驟； 將該基材運送至該成膜過程區域内，對該第2金屬元 200928460 素所構成之第2靶進行濺擊、或對該f 1靶與該第2靶進 仃濺擊以於忒帛1膜表面形成該第2金屬元素的薄膜、或 以第1金屬tl素與該第2金屬元素所構成之合金之薄膜， 將开/成有該薄膜之該基材運送至該反應過程區域内，對該 薄膜進行氡、氮或氧氮混合氣體之電聚處理，藉此形成該 第2膜之步驟； 並具備下述步驟： 反覆進灯該第1膜形成步驟與該第2膜形成步驟，藉 此形成該介電質臈之介電質膜形成步驟； 將該基材運送至該成膜過程區域内，對該第丨靶以及 該第2靶之一者或兩者進行濺擊以於該介電質膜表面形成 薄膜，並將形成有該薄膜之該基材運送至該反應過程區域 内，再視需要對該薄膜進行氧、氮或氧氮混合氣體之電漿 處理’藉此形成該吸收膜之吸收膜形成步驟。 如上所述，光學濾器製造所需之靶的材料，因構成介 電質膜之金屬元素與構成吸收膜之金屬元素相同，故與製 造以往3種以上金屬元素所構成之光學濾器的情況相比， 多層膜的構成簡單。 再者，因進行濺鍍之成膜過程區域與進行電漿處理之 反應過程區域係分隔開來，故反應過程區域内之反應性氣 體難以接觸成膜過程區域内之乾。因而乾與反應性氣體反 應所致之乾的異常放電難以發生。因此，成膜時不須將基 體的溫度調尚’且可於低溫且維持高成膜率之狀態下進行 成膜。因此，即使對於在高溫不易變形之樹脂製之基材亦 200928460 可有效率地進行成膜。 上述課題可經由本發明之光學機器因具備上述任一广 所記載之光學濾器來獲得解決。 如上所述，本發明之光學機器因具備多層膜之構成簡 單且可廉價地製造，同時每一批製品之精度偏差少之光學 濾器，故光學機器本身的製造花費亦低廉且每一製$ 差亦少。 本發明之光學濾器以及其之製造方法，因構成介電質 膜之金屬元素與構成吸收膜之金屬元素相同，故構成多層 膜之金屬元素的種類少，且多層膜之構成簡單。又，因介 電質膜與吸收膜所含之金屬元素相同，故可使介電質膜與 吸收膜之成膜時的材料共通。 因此，用以形成多層膜之材料的種類少且成膜時的製 造管理容易，故可降低光學濾器之製造所需要的花費。再 者，因多層膜之構成簡單，每批製品之精度偏差少，可提 供高精度之光學濾器。 又，本發明之光學機器’因如上所述般具備多層膜構 成簡單之光學濾器，故可使製品之製造花費低廉，且每批 之精度偏差少。 【實施方式】 以下參照圖面說明本發明之一實施形態。其中，以下 所說明之構件、配置等係將發明具體化之一例，本發明並 不限定於此，且當然可遵循本發明宗旨進行各種改變。 圖1係表示光學濾器之截面形狀之示意圖、圖2係表 200928460 不從上方看薄膜形成裝置内部之狀態說明圖。其中，圖1 中’為了容易理解本發明，係將薄膜膜厚描繪成較實際的 厚度厚。 本發明之光學濾器的具體例可舉出：長波長截斷濾 器短波長截斷;慮器、帶通濾器（bandpass filter)、ND渡器 等。以下之例係例舉光學濾器之一例即ND濾器來說明本發 明。In this case, the absorbing film is preferably a metal composed of one or both of the second metal element and the second metal element, or an incomplete oxide, incomplete nitride or no of the metal. Completely composed of nitrogen oxides. Further, the metal element is preferably selected from the group consisting of carbon, magnesium, aluminum, lanthanum, chromium, manganese, iron, cobalt, nickel, yttrium, lanthanum, cerium, lanthanum, molybdenum, indium 'tin, tin, tungsten. metal element. Further, the substrate is preferably one or more selected from the group consisting of glass, polycarbonate, polyethylene terephthalate, polymethyl methacrylate, and olefin polymer. Composition. The above-mentioned problem is solved by the method for producing an optical filter according to the present invention. The method for producing an optical filter according to the present invention is the method for producing an optical filter according to any one of the above paragraphs. The ith layer of the first metal element is slammed to form a film of the metal element on the surface of the substrate, and the film is subjected to an electric treatment of oxygen, I or a mixed gas of oxygen and gas, thereby forming a film. a forming step; a second shot made of the first metal element of the joint 1 and the second metal element; or a film 2' of the = 2 is formed on the surface of the first film to form the second film to the genus element, each word黎瓸-$The film of the first metal ruthenium and the alloy of the second metal element 200928460, and the film is subjected to electropolymerization of oxygen, gas or oxygen mixed gas, thereby forming the second film a second film forming step; and a step of: repeating the first film forming step and the second film forming step (4) to form a dielectric film forming step of the dielectric film; (4) the second and the first 2 dry - either or both to make a shock to the dielectric Thin film formed on the surface, plasma treatment and as needed oxygen, nitrogen or a mixed gas of oxygen and nitrogen of the thin film, thereby forming y-absorbing film of the absorber film forming step. As described above, since the metal element constituting the dielectric film is the same as the metal 7G element constituting the absorption medium, the type of the metal element constituting the multilayer film is small and the configuration of the multilayer film is simple. Further, since the dielectric film is the same as the metal element contained in the absorbing film, it can be made common to the material when the dielectric film and the absorbing film are formed. Moreover, the above problem can be solved by the method for producing an optical filter of the present invention, and the method for producing an optical filter according to the present invention is the method for producing an optical filter according to any one of the above paragraphs. Providing at least one of a film forming process region and a vacuum chamber of the reaction process region at positions separated from each other, transporting the substrate to the film forming process region, and splashing the first target formed by the i-th metal element Forming the metal element film on the surface of the substrate, transporting the substrate on which the film is formed into the reaction process region, and performing plasma welding of oxygen, nitrogen or oxygen-nitrogen mixed gas on the film in the reaction process region. a step of forming the first film by the treatment; transporting the substrate to the film formation process region, and sputtering the second target composed of the second metal element 200928460 or the target of the f 1 target The second target is splattered to form a film of the second metal element on the surface of the ruthenium film or a film of an alloy of the first metal chrome and the second metal element. The substrate of the film is transported into the reaction process region, and the film is subjected to electropolymerization treatment of a mixed gas of neon, nitrogen or oxygen and nitrogen to form the second film; and the following steps are provided: a first film forming step and a second film forming step, thereby forming a dielectric film forming step of the dielectric material; transporting the substrate to the film forming process region, the second target and the first 2 or both of the targets are splashed to form a film on the surface of the dielectric film, and the substrate on which the film is formed is transported into the reaction process region, and the film is subjected to oxygen and nitrogen as needed. Or plasma treatment of an oxygen-nitrogen mixed gas 'by forming an absorption film forming step of the absorption film. As described above, since the metal element constituting the dielectric film is the same as the metal element constituting the absorption film, the material of the target required for the production of the optical filter is compared with the case of manufacturing an optical filter comprising three or more kinds of metal elements. The composition of the multilayer film is simple. Further, since the film formation process region where the sputtering is performed is separated from the reaction process region where the plasma treatment is performed, it is difficult for the reactive gas in the reaction process region to contact the dryness in the film formation process region. Therefore, the dry abnormal discharge caused by the reaction with the reactive gas is hard to occur. Therefore, it is not necessary to adjust the temperature of the substrate at the time of film formation, and it is possible to form a film in a state where the film formation rate is low and the film formation rate is maintained. Therefore, even in the case of a substrate made of a resin which is not easily deformed at a high temperature, 200928460 can be efficiently formed into a film. The above problem can be solved by the optical device of the present invention having the optical filter described in any of the above. As described above, the optical apparatus of the present invention has an optical filter which is simple in construction of a multilayer film and can be manufactured at low cost, and has low precision deviation of each batch of products, so that the optical machine itself is inexpensive to manufacture and has a low cost per system. There are also few. In the optical filter of the present invention and the method for producing the same, since the metal element constituting the dielectric film is the same as the metal element constituting the absorption film, the type of the metal element constituting the multilayer film is small, and the configuration of the multilayer film is simple. Further, since the dielectric film and the metal element contained in the absorption film are the same, the dielectric film and the material at the time of film formation of the absorption film can be made common. Therefore, the number of materials for forming the multilayer film is small, and the manufacturing management at the time of film formation is easy, so that the cost required for the production of the optical filter can be reduced. Further, since the composition of the multilayer film is simple, the precision deviation of each batch of the product is small, and a high-precision optical filter can be provided. Further, since the optical apparatus of the present invention has a multilayer film and a simple optical filter as described above, the manufacturing cost of the product can be made low, and the variation in precision per batch is small. [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Here, the members, the arrangement, and the like described below are examples of the invention, and the present invention is not limited thereto, and various changes can be made without departing from the spirit of the invention. Fig. 1 is a schematic view showing a cross-sectional shape of an optical filter, and Fig. 2 is a schematic explanatory view showing a state in which the inside of the thin film forming apparatus is not seen from above. Here, in Fig. 1, in order to facilitate the understanding of the present invention, the film thickness is drawn to be thicker than the actual thickness. Specific examples of the optical filter of the present invention include a short-wavelength cutoff of a long-wavelength cut filter, a bandpass filter, a ND repeater, and the like. The following examples illustrate an embodiment of an optical filter, i.e., an ND filter, to illustrate the present invention.
如圖1所不，本發明之光學濾器p係具備基材s、與形 成於此基材s表面之多層膜Μβ多層膜M係具備：具有複 數之膜所積層而成之構造之介電質膜F、與形成於構成介電 質膜F之複數膜間之吸收膜a。 —基材S係由具有光穿透性之材料所形成，為於表面附 著有"電質獏F、吸收膜A之基板之構件。本實施形態中係 :用，板狀者作為基材s，但基材8的形狀並不限定於此， ’、要疋可於表面形成薄臈者即可，亦可形成為如透鏡形 狀、圓筒狀、圓環狀之其他形狀。 瓜 *基材S之材料可舉出例如：選自玻璃、聚碳酸醋、聚 ::一甲酸乙二醇酯、《甲基丙烯酸甲酯、烯烴聚合物所 構成群中之材料。又，或 棱升基材s之強度，亦可於該 等材料混人破璃纖維、碳纖維、或該等之混合_。其中， 烯烴聚合物之具體㈣佳為透 性兼具低雙折射 「HEX 烯烴聚合物，具體而言… 本登錄商標)、「㈣臟」(登錄商標，皆為曰 本zeon製）等。 12 200928460As shown in Fig. 1, the optical filter p of the present invention includes a substrate s and a multilayer film 形成β multilayer film M formed on the surface of the substrate s, and a dielectric having a structure in which a plurality of films are laminated. The film F and the absorption film a formed between the plurality of films constituting the dielectric film F. - The substrate S is formed of a material having light permeability, and is a member to which a substrate of "Electrical" F and Absorbing film A is attached. In the present embodiment, the shape of the substrate is used as the substrate s. However, the shape of the substrate 8 is not limited thereto, and the thinner surface may be formed on the surface, or may be formed into a lens shape. Other shapes of cylindrical or annular. Melon * The material of the substrate S may, for example, be selected from the group consisting of glass, polycarbonate, polyethylene glycol monoester, and "methyl methacrylate" and olefin polymer. Further, or the strength of the substrate s, the material may be mixed with the glass fiber, the carbon fiber, or the like. Among them, the specific (four) of the olefin polymer is preferably a low-birefringence "HEX olefin polymer, specifically... this registered trademark", "(four) dirty" (registered trademarks, all of which are manufactured by ze zeon). 12 200928460
介電質膜 之介電質臈F F係具有入射光可穿透之性質之膜。 係具有複數之膜所積層而成之構成。 本實施形態之介電質膜 膜F1與第2膜F2所構成。第 金屬元素）之氧化物、氮化物 F係由相異材料所形成 1膜F1係由金屬元素 、或氮氧化物所構成。 本發明 之第1 X (第1 第2膜F2係由與金屬元素又相異之金屬元素γ (第2 金屬元素）之氧化物、氮化物、或氮氧化物所構成。或者第 2膜Μ亦可由金屬元素X與金屬元素γ所構成之合金之氧 化物、氮化物、或氮氧化物所構成。 其中，圖所示之實施形態雖表示僅由2種膜作為介電 質媒F所構成之構造，但本發明之介電質並不限定於 上述之僅由2種膜所形成之構成，亦可為3種以上之膜所 形成。例如，第3之膜F3亦可使用以與金屬元素χ，γ相 異之金屬元素Ζ作為材料之膜。The dielectric 臈F F of the dielectric film has a film that is permeable to incident light. It has a structure in which a plurality of films are laminated. The dielectric film F1 of the present embodiment and the second film F2 are formed. The oxide or nitride of the metal element) is formed of a dissimilar material. The film F1 is composed of a metal element or an oxynitride. In the first X film of the present invention, the first and second films F2 are composed of an oxide, a nitride, or an oxynitride of a metal element γ (second metal element) different from the metal element. It may be composed of an oxide, a nitride or an oxynitride of an alloy composed of a metal element X and a metal element γ. The embodiment shown in the figure shows that only two types of films are used as the dielectric medium F. However, the dielectric of the present invention is not limited to the above-described configuration in which only two types of films are formed, and may be formed of three or more types of films. For example, the third film F3 may be used together with a metal. The element χ, the γ-different metal element Ζ is used as the film of the material.
吸收膜Α係具有吸收一部分入射光之性質之膜。因本 實施形態之光學濾器？為ND濾器，故吸收膜A可由可見 光區域（400〜70〇nm)之分光穿透率大致均一之材料所形 成。此情況之吸收膜A的平均穿透率一般在〇 〇1〜9〇 〇的範 圍内。 吸收膜A係由含有金屬元素χ與金屬元素γ中任一者 或兩者之材料所形成。詳而言之，吸收膜Α可舉出金屬元 素X與金屬元素Y中任一者所構成之金屬、或該等2種金 屬元素X、Y所構成之合金。或者，吸收膜A亦可由上述 之金屬或合金之不完全氧化物、不完全氮化物、或不完全 13 200928460 氮氧化物所構成。 金屬元素Χ’Υ之具體例可舉出：選自由碳（C)、鎂 (Mg)、銘（Α1)、石夕（Si)、鉻（Cr)、猛（Μη)、鐵（Fe)、钻（Co)、 鎳（Ni)、鋅（Zn)、鍺（Ge)、锆（Zr)、鈮（Nb)、鉬（Mo)、銦（In)、 錫（Sn)、钽（Ta)、鎢（W)所構成之群中之元素。 介電質膜F與吸收膜A可從該等之金屬元素中選擇因 應光學濾器P所要求之特性之金屬元素來加以設計。具體 而吕，根據金屬元素X、金屬元素γ、合金χ+γ本身的光 學常數、該等金屬或合金之不完全氧化物、完全氧化物、 不完全氮化物、完全氮化物、不完全氮氧化物、和完全氮 氧化物之光學常數，來選擇符合介電質膜F與吸收膜A所 要求之光學特性之材料。又，藉由使用所選擇之材料，以 例如濺鍍等成膜技術於基材S表面積層介電質膜f與吸收 膜A來形成多層膜Μ» (光學濾器P之製造裝置） 接著’針對光學濾器P之製造裝置進行說明。本發明 之光學濾器P使用以下所說明之成膜過程區域與反應過程 區域分開之薄膜形成裝置來製造較佳。 此薄膜形成裝置中，因進行濺鍍之成膜過程區域與進 行反應性氣體處理之反應過程區域是分開的，故成膜過程 區域内成為未導入氮氣體、氧氣體等反應性氣體之狀態。 因此’靶表面之金屬不會與反應性氣體反應，可抑制於施 加高頻電壓時所產生之靶的異常放電《以往，為了一邊抑 制異常放電一邊進行成膜，會將基材s的溫度調高，但本 200928460 薄膜形成裝置甲不需將基材s的溫度調高，故可於低溫度 且維持高成膜率之狀態下進行成膜。 本實施形態中，薄膜形成裝置係使用進行濺鍍之一例 即磁控管濺鑛（magnetron sputtering)之薄膜形成裝置，但本 發明之薄膜形成裝置並不限定於此種磁控管濺鍍，亦可使 用進行非使用磁控管放電之二極濺鍍等其他習知濺鍍之薄 膜形成裝置。 本實施形態之薄膜形成裝置中，藉由濺鍍處理步驟與 ® 電漿處理步驟來於基材S表面形成中間薄膜，該濺鍍處理 步驟係於基材S表面附著較所要膜厚來的薄之薄膜，該電 聚處理步驟係對該薄膜進行氧化等處理來改變薄膜組成， 並藉由多次重複此濺鍍處理與電漿處理，積層複數之中間 薄膜以於基材S表面形成具有所要膜厚之最終薄膜。 具體而言，於旋轉筒（rotary drum)的每次旋轉時重複進 行以下步驟以形成具有所要之數nm〜數百nm左右膜厚之最 0 終薄膜：於基材S表面形成因濺鍍處理與電漿處理而組成 改變後之膜厚平均値為〇 Ohi 5nm左右之中間薄膜之步 驟。 以卜 說明溥膜形成裝置 如圖2所示，本實施形態之薄膜形成裝置i係以下却 者作為主要之構成要素：真空容器u、旋轉筒13、濺鍍^ 段20(第1減鑛手段）、濺鍍氣艘供給手段3〇(第上幾錄氣免 供給手段）、雜手段4〇(第2⑽手段）、濺錢體供㈣ 段叫第2濺鐘氣體供給手段）、電装發生手段6〇、反應七 15 200928460 氣體供給手段70。 其t ’圖中以虛線表示濺鍍手段20、濺鍍手段4〇、電 漿發生手段60;以點折線表示濺鍍氣體供給手段3〇、機錢 氣體供給手段50、反應性氣體供給手段70。 真空容器11係習知薄膜形成裝置一般所使用之不鏽鋼 製且大致作成長方體形狀之中空體。真空容器11之内部係 由可開閉之門11C分成薄膜形成室11A與加栽互鎖室 (load-lock chamber)llB 〇 旋轉筒13係用以保持基材s之筒狀構件，且具有作為 基體保持手段之功能。於旋轉筒13係設有筒旋轉軸Μ，且 此筒旋轉軸18係連接成與未圖示之馬達的輸出軸成為同軸 狀。 於真空容器11之内壁，面向旋轉筒13立設有分隔壁 12，14，19。本實施形態之分隔壁1214，19皆為與真空容器" 相同之不鏽鋼製的構件。該等分隔壁12，14，19皆由逐個配 設於上下左右之平板構件所構成，從真空容器丨丨的内壁面 向旋轉筒13 突出成為從四方將旋轉冑13外周面包圍 之狀態。 於真空容器11之側壁’在夾著筒旋轉轴18而相對向 之兩處形成有向外面突出之截面凸狀之突出壁面，於各個 突出壁面設有漱鍍手段20與減鍍手段4〇。成膜過程區域 2〇A係由經真空容器11的由鹛& 八^ ^ 们内壁面、分隔壁12、旋轉筒13 的外周面、滅锻手段20所®达二上、. , 所圍繞而成之區域所形成。又，成 膜過程區域40A係由經真空交 具二合器11的内壁面、分隔壁14、 200928460 旋轉筒13的外周面、濺鍍手段4〇所圍繞而成之區域所形 成。在該等成膜過程區域20A，40A中係進行使膜原料物質 附著於基材S表面之濺鍵處理。 又’於以筒旋轉轴18為中心與成膜過程區域20 A與成 膜過程區域40A兩者相隔呈約90。之真空容器11的侧壁亦 形成有向外面突出之截面凸狀的突出壁面，於此突出壁面 係设有電黎·發生手段60。反應過程區域60A係由經真空容 器11的内壁面、分隔壁19、旋轉筒13的外周面、電漿發 ® 生手段60所圍繞而成之區域所形成。在此反應過程區域 60A中’係對附著於基材S表面之膜原料物質進行電漿處 理。 (成膜過程區域20A) 以下，說明成膜過程區域20A » 於成膜過程區域20A係設置有濺鍍手段20 ^濺鍍手段 20係由下述者所構成：一對之磁控管濺鍍電極21 a，21b、分 別保持於該等磁控管濺鍍電極21a,2lb之保持靶22a 22b、 ❹ 供給電力至磁控管濺鍍電極21 a，21b之交流電源23、作為 調節供給至磁控管濺鍍電極21a,2 lb之電力量的電力控制手 段之變壓器24。 真空容器11之壁面係向外面突出，且此突出部的内壁 以磁控管濺鍍電極21a，21b穿通側壁之狀態配設有磁控管減 鍍電極21a，21b。此磁控管濺鍍電極21a，21b係透過未圖示之 絶緣構件固定於位於接地電位之真空容器11。 磁控管藏锻電極21a，2 lb係具有複數個磁石配置於既定 17 200928460 方向而成之構造。磁控管濺鍍電極21a，2ib係透過變壓器 Μ連接於交流電源23,且構成為可於兩電極施加ik〜i〇〇kHz 之交流電場。 靶22a，22b係將膜原料物質形成為平板狀而成者，且如 後所述係以面向旋轉筒13侧面的方式可拆卸地保持於磁控 管濺鍍電極21a’21h靶22a，22b的材質係因應介電質膜F、 吸收膜A所要求之光學特性來適當地選擇。 於成膜過程區域20A的外部係設有供給氬等濺鍍氣體 之濺錄氣體供給手段30。賤鑛氣體供給手段go具備下述者 作為主要構成要素：作為濺鍍氣體儲藏手段之濺鍍氣體筒 31、作為調整濺鍍氣體流量之濺鍍氣體流量調整手段之質 量流量控制器（Mass flow controller)32。滅鍍氣體可舉出例 如氬、氦等鈍性氣體。 質量流量控制器32係調節氣體流量之裝置。來自濺鎮 氣體筒3 1之濺鍍氣體係經由質量流量控制器32調節流量 並導入至成膜過程區域20A内。 當濺鍍氣體從濺鍍氣體供給手段30供給至成膜過程區 域20A後’靶22a，22b的週邊便成為鈍性氣體環境氣氛。於 此狀態下，當交流電極從交流電源23施加至磁控管濺鍍電 極21a ’ 21b後，靶22a，22b週邊的濺鍍氣體的一部分係放 出電子而離子化。 因配置於磁控管濺鍍電極21a，21b之磁石而於無 22a，22b的表面形成了漏磁場，故此電子在形成於靶22a 22b 表面附近之磁場中一邊描繪出環形曲線一邊旋轉。沿著此 18 200928460 電子的軌道發生強電漿，而濺鍍氣體的離子朝向此電漿被 加速’衝撞至靶22a,22b，因而靶22a，22b表面的原子、粒 子（把22a，22b為矽的情形時為矽原子或矽粒子）被撞出。此 原子或粒子係薄膜的原料即膜原料物質，係附著於基材S 表面形成薄膜。 (成膜過程區域40A) 以下說明成膜過程區域40A。 於成膜過程區域40A係設置有濺鍍手段40。濺鍍手段 40係與濺鑛手段2〇相同，由下述者所構成：一對之磁控管 濺鍍電極41a，41b、分別保持於該等磁控管濺鍍電極41a,41b 之乾42a，42b、供給電力至磁控管濺鍍電極41a,41b之交流 電源43、作為調節供給至磁控管濺鍍電極41a，41b之電力量 的電力控制手段之變壓器44»磁控管濺鍍電極41a，41b、 交流電源43、變壓器44因分別與磁控管濺鍍電極21a 21b、 交流電源23、變壓器24相同，故省略詳細之說明。 ◎ 靶42a，42b係由與靶22a，22b相異之金屬元素材料所形 成β靶22a，22b與靶42a，42b之金屬元素係因應所製造之光 學濾器P介電質膜F與吸收膜A所要求之特性適當地選 擇。例如，介電質膜F之中，第j膜F1使用氧化矽（si〇2)、 第2膜F2使用五氧化鈮（Nb2〇5)、吸收膜a使用金屬鈮（金 屬Nb)的情況時，靶22a，22b係使用金屬矽（si)、靶42a42b 係使用金屬銳（Nb)。 成膜過程區域40A之外部係設有供給氬等濺鍍氣體之 濺鍍氣體供給手段50。濺鍍氣體供給手段5〇具備下述者作 200928460 為主要構成要素：作為濺鍍氣體儲藏手段之濺鍍氣體筒 51、作為調整濺鍍氣鱧流量之濺鍍氣體流量調整手段之質 量流量控制器52。濺鍍氣體筒5 i與質量流量控制器52係 分別為與濺鍍氣體筒31和質量流量控制器32相同之構 成，故省略詳細之說明。 (反應過程區域60A) 接著說明反應過程區域60 A。如上所述，係於反應過程 區域60A中’將在成膜過程區域2〇A中附著於基材s表面 〇 之膜原料物質加以電漿處理，並進行膜原料物質之完全反 應物、不完全反應物之形成。 電漿發生手段60係設置成面對反應過程區域6〇A。本 實施形態之電漿發生手段60係具有：盒體61、介電質板 62、天線63、高頻電源64、匹配箱（matching b〇x)65。 盒體61係以將形成於真空容器11壁面之開口塞住的 方式固定之不鏽鋼製板狀構件。電漿發生手段6〇係藉由盒 體61固定於真空容器11的壁面，而安裝於真空容器丨丨的 ^ 壁面。 介電質板62係固定於盒體61之板狀介電質構件。本 實施形態之介電質板62雖由石英所形成，但亦可為Ai2〇3 等陶瓷材料所形成者。藉由介電質板62固定於盒體6i，而 於盒體61與介電質板62所圍成之區域形成天線收容室。 介電質板62係朝向反應過程區域6〇A設置。此時，天 線收容室係與真空容器U的内部分離。亦即，天線收容室 與真空容器11的内部係以由介電質板62所分隔之狀態形 200928460 成有獨立之空間。又’天線收容室與真空容器11的外部係 以由盒體61所分隔之狀態形成有獨立之空間。 天線收容室係透過配管連通至真空泵15,並可藉由真 空泵1 5吸真空將内部排氣作成真空狀態。 天線63係從高頻電源64接受電力供給以使反應過程 區域60A的内部發生誘導電場，並使反應過程區域60A發 生電衆。本實施形態中’係從尚頻電源64施加頻率1〜27MHz 之交流電壓至天線63，以使反應過程區域60A發生反應性 氣體的電漿。 天線63係透過收容匹配電路之匹配箱65連接於高頻 電源64。於匹配箱65内係設置有未圖示之可變電容器，可 將從高頻電源64供給至天線63之電力做改變。 於反應過程區域60A之外部係設有反應性氣體供給手 段70。反應性氣體供給手段70係具備下述者作為主要之構 成要素：儲藏反應性氣體之反應性氣體筒71、調整由反應 性氣體筒71所供給之反應性氣體流量之質量流量控制器 72、儲藏鈍性氣體之鈍性氣體筒73、調整由鈍性氣體筒73 所供給之鈍性氣體流量之質量流量控制器74。 其中，反應性氣體筒71與鈍性氣體筒73可採用與成 膜過程區域20A之濺鍍氣體筒31相同之裝置。又，質量流 量控制器72與質量流量控制器74可採用與成膜過程區域 2〇A之質量流量控制器32相同之裝置。 當在反應性氣體、鈍性氣體從反應性氣體筒71通過配 管導入至反應過程區域60A之狀態下，將電力從高頻電源 21 200928460 64供給至天線63時，於反應過程區域60A内面向天線63 之區域會發生電漿。藉此，形成於基材S表面之膜原料物 質會經反應性氣體而進行電聚處理。 本實施形態之薄膜形成裝置1係如上所述般形成為： 經由濺鍍進行膜原料物質供給之成膜過程區域20A與進行 膜原料物質與反應性氣體反應之反應過程區域60A分開位 於真空容器11内分離之位置上，如以往使用一般反應性濺 艘裝置的情況般，難以產生靶22a,22b與反應性氣體反應而 引起異常放電之不良狀況。因此，可提高反應過程區域6〇A 内反應性氣體之供給量，或使電漿的發生密度上昇、促進 膜原料物質與反應性氣體的反應。 因此’不如以往般需要提高基材s的溫度來提升反應 性’而可於低溫充分地進行反應。藉此，即使對於由例如 耐熱性低之塑膠樹脂所形成之基材s等，亦可充分地進行 反應’可製造膜質優良之光學濾器P。 ▲(光學濾器P之製造方法） © 接著，使用此薄膜形成裝置1說明形成於樹脂製基材S 形成有介電質膜F與吸收膜A之多層膜1^之情況。以下之 例中，介電質膜F之中，第1膜pi係成膜有氧化矽（Si〇2)、 第2膜F2係成膜有五氧化鈮（Nb2〇5)、吸收膜a係成膜有 金屬鈮（金屬Nb)。 首先，將基材s固定於旋轉筒13，並收容於真空容器 11内。然後，於使真空容器Π内密閉之狀態下，使用真空 泵15將真空容器U内作成1(rl〜1〇-5pa左右之高真空狀 22 200928460 癌。乾22a，22b之材料係使用金屬發，把42a，42b之材料係 使用金屬銳。 接著’於基材S表面形成介電質膜f。首先，旋轉旋轉 筒13使基材S移動至成膜過程區域2〇a内（基體運送步 驟）、於成膜過程區域20A對靶22a，22b進行濺擊以於基材 S表面形成金屬矽所構成之薄膜（濺鍍步驟接著，旋轉旋 轉筒13將基材5運送至反應過程區域60A(基體運送步 驟）。於此運送之前，反應過程區域6〇A係預先導入有反應 性氣體。然後’於反應過程區域6〇A的内部使反應性氣體 的電漿發生並使其與薄膜的金屬反應，以將金屬矽變換成 氧化矽（電漿處理步驟）。 然後’旋轉旋轉筒13並重複多次上述之濺鍍步驟與電 聚處理步驟’到成為既定之膜厚之前繼續進行成膜，藉此 形成第1膜F1(第1膜形成步驟 接著’於第1臈F1之表面形成第2膜F2。首先，將基 材S運送至成膜過程區域40A内，藉由對乾42a，42b進行 滅:擊以於第1膜F 1表面形成金屬鈮所構成之薄膜（濺鍍步 驟）。基材S係藉由旋轉筒13之旋轉被運送至反應過程區域 60A。於反應過程區域6〇 a的内部使反應性氣體的電漿發生 並使其與薄膜的金屬反應，以將金屬鈮變換成五氧化鈮（電 漿處理步驟）。 然後’旋轉旋轉筒13並多次重複上述之濺鍍步驟與電 裝處理步驟’到成為既定之膜厚之前繼續進形成膜，藉此 形成第2膜F2(第2膜形成步驟）。 23 200928460 再者’到成為所要之膜數之前重複進行上述之第1膜 形成步驟與第2臈形成步驟，以形成介電質膜F之一部分（介 電質腹形成步驟）。 接著’於介電質膜F之表面形成吸收膜A。首先，將基 材S運送至成膜過程區域4〇a内，藉由對把42a，42b進行 濺擊以於介電質膜|7表面形成金屬鈮所構成之薄膜（濺鍍工 程）。然後，旋轉旋轉筒13並重複多次上述之濺鍍步驟，到 成為既定之膜厚之前繼續進形成膜，形成吸收膜A(吸收膜 ^形成步驟）。 再者，於形成有吸收膜A之基材S再度重複進行介電 質膜形成步驟，於吸收膜A之表面形成介電質膜F。藉此 形成具有最終所要之光學特性之多層膜M。成膜結束後停 止旋轉筒13的旋轉和氣體之供給，將旋轉筒13運送至加 載互鎖室11B。之後，將加載互鎖室11B對空氣開放，將 基材S從旋轉筒13取下。 φ 如上所述，本實施形態之薄膜形成裝置1因具備使相 異材料所構成之膜原料物質附著之成膜過程區域2〇A與成 膜過程區域40A，故即使介電質膜f和吸收膜A係將相異 金屬材料積層所成者’仍不須要解除真空容器11之真空狀 態來將靶進行交換。因此，可謀求光學濾器p製造所需要 之產距時間（takt time)之短縮。 其中，上述之例中，吸收膜A係形成與反應性氣體未 反應之金屬鈮，而當吸收膜A使用金屬鈮與反應性氣體之 不完全反應物的情況時，係將濺鍍步驟後之基材s運送至 24 200928460 反應過程區域60A，並對金屬鈮進行反應性氣體之電漿處理 (電漿處理步驟）。 又，上述之例中，構成第2膜F2i金屬元素僅使用鈮， 但第2膜F2之材料亦可為2種之金屬元素所構成之合金。 此情況時，藉由對相異材料所構成之靶22a，22b與靶 進行濺擊’可於基材S表面形成2種之金屬元素所構成之 合金的薄膜。 實施例 其次，實際製造光學濾器P之實施例.每一實施例中 皆使用圖2所示之薄膜形成裝置i來形成光學濾器p。在各 實施例所示之各種條件下形成光學濾器p，並測定 4〇0〜700nm之穿透率。 (實施例1 : ND濾器） 介電質膜F與吸收膜A之材料分別使用矽與鈮之金 屬，作成穿透率成為約12。/。之光學濾器P(ND濾器）。此種 ND濾器係要求可見光區域（4〇〇〜7〇〇nm)之穿透強度均等地 衰減之特性，並使用於例如照相機之「光圈」等。 成膜條件係如以下所述。 <成膜條件> 介電質膜F(第1膜F1):氧化矽（si〇2) 介電質膜F(第2膜F2):五氧化鈮（Nb2〇5) 吸收膜A(第2層，第5層）：金屬鈮（金屬Nb) 靶22a，22b :金屬矽 靶42a，42b :金屬鈮 25 200928460 電力（金屬矽）：4.4W/cm2 電力（金屬鈮）：2.7W/cm2 供給氣體（成膜過程區域20A，40A):氬氣 供給氣體（反應過程區域60 A):氧氣 壓力：0.35Pa 表1 從基材S表面算起之層數 膜種 膜厚(nm) 1 Nb205 76.07 2 金屬Nb 12.72 3 Nb205 30.04 4 Si02 50.20 5 金屬Nb 10.45 6 Nb205 45.78 7 Si02 89.53 ❹ 圖3係表示實施例1之ND濾器的穿透率與反射率之測 定結果。如此圖所示’係瞭解到實施例1之ND濾器於可見 光區域波長400〜700nm範圍内顯示約12%之大致平坦的穿 透率特性。 (實施例2 : ND Green濾器） 與實施例1相同’係使用石夕與能之金屬所構成之材料， 作成以綠的波長範圍作為中心使光穿透之光學濾器p(nd Green濾器）。此種ND Green濾器係使用於例如顯微鏡顯示 記憶體用之「暗綠」的照明用、或於使用色彩輪（color wheel) 26 200928460 之投影機之RGB色調修正用。 成膜條件係如以下所述。 <成膜條件> 介電質膜F(第1膜F1):氧化矽（Si02) 介電質膜F(第2膜F2):五氧化鈮（Nb205) 吸收膜A(第13層）：金屬鈮（金屬Nb) 靶22a，22b :金屬矽 靶42a,42b :金屬鈮 ❹ 電力（金屬矽）：4.4W/cm2 電力（金屬鈮）：2_7W/cm2 供給氣體（成膜過程區域20A,40A):氬氣體 供給氣體（反應過程區域60A):氧氣體 壓力：0.35Pa 表2 從基材S表面算起之層數 膜種 膜厚(nm) 1 Nb2〇5 61.39 2 Si02 117.16 3 Nb2〇5 97.28 4 Si〇2 92.22 5 Nb2〇5 51.42 6 Si02 45.96 7 Nb205 24.30 8 Si02 87.17 27 200928460 9 Nb205 50.27 10 SiO, 89.07 11 Nb2〇5 54.30 12 Si〇2 168.49 13 金屬Nb 32.49 14 Si〇2 162.93 15 Nb2〇5 56.92 16 Si02 292.62 17 Nb2〇5 87.47 _ 18 Si02 198.13 圖4係表示實施例2之ND Green濾器之穿透率測定結 果。如此圖所示’係瞭解到實施例2之ND Green濾器於可 見光區域波長480〜580nm範圍内顯示約15%之大致平坦的 穿透率特性’且其他之波長範圍則大致為穿透率〇。 以上，由實施例1，2之結果可瞭解到即使將2種之金 屬元素作為材料形成多層膜Μ，亦可製造具有所要之光學 特性之光學濾器Ρ。 【圖式簡單說明】 圖1表示光學濾器之截面形狀之示意圖。 圖2表示從上方看薄膜形成裝置内部之狀態說明圖。 圖3表示實施例1之光學濾器之穿透率與反射率。 圖4表示實施例2之光學濾器之穿透率。 【主要元件符號說明】 28 200928460The absorbing film has a film that absorbs a portion of the incident light. What is the optical filter of this embodiment? Since it is an ND filter, the absorption film A can be formed of a material having a substantially uniform light transmittance in a visible light region (400 to 70 Å). The average transmittance of the absorbing film A in this case is generally in the range of 〇1 to 9 〇. The absorbing film A is formed of a material containing either or both of a metal element lanthanum and a metal element γ. More specifically, the absorbing film Α may be a metal composed of any one of the metal element X and the metal element Y, or an alloy composed of the two metal elements X and Y. Alternatively, the absorbing film A may be composed of an incomplete oxide, an incomplete nitride, or an incomplete oxidized metal of the above-mentioned metal or alloy. Specific examples of the metal element Χ' 可 are selected from the group consisting of carbon (C), magnesium (Mg), Ming (Α1), Shi Xi (Si), chromium (Cr), 猛 ()η), iron (Fe), Drilling (Co), nickel (Ni), zinc (Zn), germanium (Ge), zirconium (Zr), niobium (Nb), molybdenum (Mo), indium (In), tin (Sn), tantalum (Ta), An element in a group of tungsten (W). The dielectric film F and the absorption film A can be designed from among the metal elements selected from the metal elements required for the characteristics required for the optical filter P. Specifically, according to the metal element X, the metal element γ, the optical constant of the alloy χ + γ itself, the incomplete oxide of the metal or alloy, the complete oxide, the incomplete nitride, the complete nitride, the incomplete nitrogen oxidation The optical constants of the material and the complete oxynitride are selected to match the optical properties required for the dielectric film F and the absorbing film A. Further, by using a selected material, a multilayer film Μ is formed on the substrate S surface layer dielectric film f and the absorption film A by a film formation technique such as sputtering, etc. (manufacturing device of optical filter P) A manufacturing apparatus of the optical filter P will be described. The optical filter P of the present invention is preferably produced by using a film forming apparatus in which a film forming process region and a reaction process region are separated as described below. In the film forming apparatus, since the film forming process region in which sputtering is performed is separated from the reaction process region in which the reactive gas treatment is performed, a reactive gas such as a nitrogen gas or an oxygen gas is not introduced into the film forming process region. Therefore, the metal of the target surface does not react with the reactive gas, and the abnormal discharge of the target generated when the high-frequency voltage is applied can be suppressed. In the past, the temperature of the substrate s was adjusted in order to form a film while suppressing abnormal discharge. It is high, but the film forming apparatus of the present invention does not need to raise the temperature of the substrate s, so that film formation can be performed at a low temperature and a high film formation rate. In the present embodiment, the thin film forming apparatus uses a thin film forming apparatus that performs magnetron sputtering, which is an example of sputtering. However, the thin film forming apparatus of the present invention is not limited to such magnetron sputtering. Other conventional thin film forming apparatuses such as two-pole sputtering which does not use magnetron discharge can be used. In the thin film forming apparatus of the present embodiment, an intermediate film is formed on the surface of the substrate S by a sputtering treatment step and a plasma treatment step, and the sputtering treatment step is performed by adhering a thin film to the surface of the substrate S. In the film, the electropolymerization step is performed by oxidizing the film to change the film composition, and by repeating the sputtering process and the plasma treatment a plurality of times, stacking a plurality of intermediate films to form a surface of the substrate S has desired The final film of film thickness. Specifically, the following steps are repeated in each rotation of the rotary drum to form a final film having a film thickness of about several nm to several hundreds of nm: a sputtering treatment is formed on the surface of the substrate S. The step of treating the intermediate film with a film thickness of 改变Ohi of about 5 nm after the composition change with the plasma treatment. As shown in FIG. 2, the film forming apparatus i of the present embodiment is mainly composed of a vacuum container u, a rotating cylinder 13, and a sputtering section 20 (first reduction means) ), sputter gas supply means 3 〇 (the first few gas-free supply means), miscellaneous means 4 〇 (2 (10) means), splash money supply (four) section called the second splash clock gas supply means), electric equipment 6〇, reaction seven 15 200928460 gas supply means 70. In the figure, the sputtering means 20, the sputtering means 4, and the plasma generating means 60 are indicated by broken lines, and the sputtering gas supply means 3, the money supply means 50, and the reactive gas supply means 70 are indicated by dotted lines. . The vacuum container 11 is a hollow body which is generally made of stainless steel and is generally formed into a rectangular parallelepiped shape, which is generally used for a film forming apparatus. The inside of the vacuum vessel 11 is divided into a film forming chamber 11A and a load-lock chamber 11B by an openable and closable door 11C. The rotating cylinder 13 is a cylindrical member for holding the substrate s, and has a base body. Maintain the function of the means. A cylindrical rotating shaft 系 is provided in the rotating cylinder 13, and the cylindrical rotating shaft 18 is connected coaxially with an output shaft of a motor (not shown). On the inner wall of the vacuum vessel 11, partition walls 12, 14, 19 are provided to face the rotating cylinder 13. The partition walls 1214 and 19 of the present embodiment are all stainless steel members similar to the vacuum container. Each of the partition walls 12, 14, and 19 is formed of a flat plate member which is disposed one by one on the upper, lower, left, and right sides, and protrudes from the inner wall surface of the vacuum container 向 toward the rotary cylinder 13 so as to surround the outer peripheral surface of the rotary cymbal 13 from the square. On the side wall of the vacuum container 11, a projecting wall surface having a convex shape protruding outward is formed at two opposite positions sandwiching the cylinder rotating shaft 18, and a ruthenium plating means 20 and a plating reduction means 4 are provided on each of the protruding wall surfaces. The film forming process area 2〇A is surrounded by the inner wall surface of the vacuum container 11 by the 鹛& 八 ^ 、, the partition wall 12, the outer peripheral surface of the rotating cylinder 13, and the forging unit 20 Formed by the formed area. Further, the film forming process region 40A is formed by the inner wall surface of the vacuum transfer combiner 11, the partition wall 14, the outer peripheral surface of the rotating cylinder 13 of 200928460, and the region surrounded by the sputtering means 4A. In the film formation process regions 20A, 40A, a sputtering process for adhering the film material to the surface of the substrate S is performed. Further, the film formation process region 20A and the film formation process region 40A are spaced apart from each other by about 90 around the cylinder rotation axis 18. The side wall of the vacuum vessel 11 is also formed with a projecting wall surface having a convex shape which protrudes outward, and the electric wall generating means 60 is provided on the protruding wall surface. The reaction process region 60A is formed by a region surrounded by the inner wall surface of the vacuum container 11, the partition wall 19, the outer peripheral surface of the rotary cylinder 13, and the plasma generating means 60. In the reaction process region 60A, the film raw material attached to the surface of the substrate S is subjected to plasma treatment. (Film Forming Process Area 20A) Hereinafter, the film forming process area 20A will be described. » The film forming process area 20A is provided with a sputtering means 20. The sputtering means 20 is composed of: a pair of magnetron sputtering The electrodes 21a, 21b are respectively held by the magnetron sputtering electrodes 21a, 2lb of the holding targets 22a to 22b, and the AC power source 23 supplying power to the magnetron sputtering electrodes 21a, 21b is supplied as an adjustment to the magnetic The transformer 24 is controlled by a power control means for sputtering the electrode 21a, 2 lb of electric power. The wall surface of the vacuum vessel 11 protrudes outward, and the inner wall of the projection is provided with magnetron deplating electrodes 21a, 21b in a state where the magnetron sputtering electrodes 21a, 21b pass through the side walls. The magnetron sputtering electrodes 21a and 21b are fixed to the vacuum vessel 11 at the ground potential through an insulating member (not shown). The magnetron tube forging electrode 21a, 2 lb is a structure in which a plurality of magnets are arranged in a predetermined direction of 17 200928460. The magnetron sputtering electrodes 21a and 2ib are connected to the AC power source 23 via a transformer Μ, and are configured to apply an alternating electric field of ik 〜 〇〇 kHz to both electrodes. The targets 22a and 22b are formed by forming a film material as a flat plate, and are detachably held by the magnetron sputtering electrodes 21a'21h targets 22a, 22b so as to face the side of the rotating cylinder 13 as will be described later. The material is appropriately selected in accordance with the optical characteristics required for the dielectric film F and the absorption film A. A splatter gas supply means 30 for supplying a sputtering gas such as argon is provided outside the film formation process region 20A. The strontium gas supply means go has the following main components: a sputtering gas cylinder 31 as a sputtering gas storage means, and a mass flow controller as a sputtering gas flow rate adjusting means for adjusting the flow rate of the sputtering gas (Mass flow controller) ) 32. The deplating gas may, for example, be a passive gas such as argon or helium. The mass flow controller 32 is a device that regulates the flow of gas. The sputter gas system from the splash gas cylinder 3 1 regulates the flow rate via the mass flow controller 32 and is introduced into the film forming process region 20A. When the sputtering gas is supplied from the sputtering gas supply means 30 to the film formation process area 20A, the periphery of the targets 22a, 22b becomes a passive gas atmosphere. In this state, when the alternating current electrode is applied from the alternating current power source 23 to the magnetron sputtering electrode 21a' 21b, a part of the sputtering gas around the targets 22a, 22b emits electrons and is ionized. Since the magnetic field is placed on the magnetron sputtering electrodes 21a and 21b and the leakage magnetic field is formed on the surfaces of the surfaces 22a and 22b, the electrons are rotated while drawing a circular curve in the magnetic field formed near the surface of the target 22a 22b. A strong plasma is generated along the orbit of this 18 200928460 electron, and the ions of the sputtering gas are accelerated toward the plasma to collide with the targets 22a, 22b, and thus the atoms and particles on the surface of the targets 22a, 22b (the 22a, 22b are 矽In the case of a helium atom or a helium particle, it is knocked out. The raw material of the atom or the particle-based film, that is, the film raw material, adheres to the surface of the substrate S to form a film. (Film Formation Process Area 40A) The film formation process area 40A will be described below. A sputtering means 40 is provided in the film formation process region 40A. The sputtering means 40 is the same as the sputtering means 2, and is composed of a pair of magnetron sputtering electrodes 41a, 41b held by the magnets 42a, 41b of the magnets 42a, 41b, respectively. , 42b, an AC power supply 43 supplying electric power to the magnetron sputtering electrodes 41a, 41b, and a transformer 44» magnetron sputtering electrode as a power control means for adjusting the amount of electric power supplied to the magnetron sputtering electrodes 41a, 41b The 41a, 41b, the AC power supply 43, and the transformer 44 are the same as the magnetron sputtering electrodes 21a to 21b, the AC power supply 23, and the transformer 24, respectively, and therefore detailed description thereof will be omitted. ◎ The targets 42a and 42b are formed by a metal element material different from the targets 22a and 22b, and the metal elements of the targets 42a and 42b are made of optical filters P dielectric film F and absorption film A. The required characteristics are appropriately selected. For example, in the case of the dielectric film F, when the j-th film F1 uses yttrium oxide (si〇2), the second film F2 uses ruthenium pentoxide (Nb2〇5), and the absorption film a uses metal ruthenium (metal Nb). The target 22a, 22b is made of metal iridium (si), and the target 42a42b is made of metal sharp (Nb). A sputtering gas supply means 50 for supplying a sputtering gas such as argon is provided outside the film forming process region 40A. The sputtering gas supply means 5 includes the following components: 200928460 as a main component: a sputtering gas cylinder 51 as a sputtering gas storage means, and a mass flow controller as a sputtering gas flow rate adjusting means for adjusting the flow rate of the sputtering gas 52. The sputtering gas cylinder 5 i and the mass flow controller 52 are the same as the sputtering gas cylinder 31 and the mass flow controller 32, respectively, and detailed description thereof will be omitted. (Reaction Process Area 60A) Next, the reaction process area 60A will be described. As described above, in the reaction process region 60A, the film raw material adhered to the surface of the substrate s in the film formation process region 2A is subjected to plasma treatment, and the complete reactant of the film raw material is incomplete. Formation of the reactants. The plasma generating means 60 is disposed to face the reaction process region 6A. The plasma generating means 60 of the present embodiment includes a casing 61, a dielectric plate 62, an antenna 63, a high-frequency power source 64, and a matching box 65. The casing 61 is a stainless steel plate-like member that is fixed to the opening formed in the wall surface of the vacuum vessel 11. The plasma generating means 6 is attached to the wall surface of the vacuum vessel 11 by the casing 61, and is attached to the wall surface of the vacuum vessel. The dielectric plate 62 is fixed to the plate-like dielectric member of the case 61. Although the dielectric plate 62 of the present embodiment is formed of quartz, it may be formed of a ceramic material such as Ai2〇3. The dielectric substrate 62 is fixed to the casing 6i, and the antenna housing chamber is formed in a region surrounded by the casing 61 and the dielectric plate 62. The dielectric plate 62 is disposed toward the reaction process region 6A. At this time, the antenna containing chamber is separated from the inside of the vacuum container U. That is, the inside of the antenna accommodating chamber and the vacuum vessel 11 has a separate space in the state of 200928460 separated by the dielectric plate 62. Further, the antenna housing chamber and the outside of the vacuum container 11 are formed with independent spaces in a state separated by the casing 61. The antenna accommodating chamber is connected to the vacuum pump 15 through a pipe, and the internal exhaust gas can be evacuated by vacuuming the vacuum pump 15. The antenna 63 receives power supply from the high-frequency power source 64 to cause an induced electric field inside the reaction process region 60A, and causes the reaction process region 60A to generate electricity. In the present embodiment, an alternating voltage having a frequency of 1 to 27 MHz is applied from the frequency-receiving power source 64 to the antenna 63 so that a plasma of a reactive gas is generated in the reaction process region 60A. The antenna 63 is connected to the high frequency power source 64 via a matching box 65 that houses a matching circuit. A variable capacitor (not shown) is provided in the matching box 65, and the power supplied from the high-frequency power source 64 to the antenna 63 can be changed. A reactive gas supply means 70 is provided outside the reaction process zone 60A. The reactive gas supply means 70 includes the following main components: a reactive gas cylinder 71 that stores a reactive gas, a mass flow controller 72 that adjusts the flow rate of the reactive gas supplied from the reactive gas cylinder 71, and a storage. The passive gas cylinder 73 of the passive gas adjusts the mass flow controller 74 of the flow of the passive gas supplied from the passive gas cylinder 73. Among them, the reactive gas cylinder 71 and the passive gas cylinder 73 may be the same as the sputtering gas cylinder 31 of the film forming process region 20A. Further, the mass flow controller 72 and the mass flow controller 74 may employ the same apparatus as the mass flow controller 32 of the film forming process area 2A. When the reactive gas or the passive gas is introduced into the reaction process region 60A from the reactive gas cylinder 71 through the pipe, electric power is supplied from the high-frequency power source 21 200928460 64 to the antenna 63, and the antenna is faced in the reaction process region 60A. Plasma will occur in the area of 63. Thereby, the film material formed on the surface of the substrate S is subjected to electropolymerization treatment by a reactive gas. The film forming apparatus 1 of the present embodiment is formed such that the film forming process region 20A for supplying the film raw material by sputtering and the reaction process region 60A for reacting the film raw material with the reactive gas are located in the vacuum vessel 11 as described above. In the position where the internal separation is performed, as in the case of using a general reactive splashing device in the past, it is difficult to cause a problem that the targets 22a and 22b react with the reactive gas to cause abnormal discharge. Therefore, the supply amount of the reactive gas in the reaction process region 6A can be increased, or the generation density of the plasma can be increased, and the reaction between the membrane raw material and the reactive gas can be promoted. Therefore, it is not necessary to increase the temperature of the substrate s to improve the reactivity, and the reaction can be sufficiently carried out at a low temperature. By this means, the substrate s formed of, for example, a plastic resin having low heat resistance can be sufficiently reacted to produce an optical filter P having excellent film quality. ▲ (Manufacturing Method of Optical Filter P) Next, a case where the multilayer film 1 of the dielectric film F and the absorbing film A is formed on the resin substrate S will be described using the film forming apparatus 1. In the following examples, among the dielectric film F, the first film pi is formed with yttrium oxide (Si〇2), the second film F2 is formed with ruthenium pentoxide (Nb2〇5), and the absorption film a is formed. The film is formed with a metal ruthenium (metal Nb). First, the substrate s is fixed to the rotary cylinder 13 and housed in the vacuum vessel 11. Then, in a state in which the inside of the vacuum vessel is sealed, the vacuum vessel 15 is used to make 1 (a high-vacuum 22 200928460 cancer of about rl ~ 1 〇 -5 Pa. The material of the dry 22a, 22b is made of metal, The material of 42a, 42b is made of metal sharp. Next, a dielectric film f is formed on the surface of the substrate S. First, the rotating drum 13 is rotated to move the substrate S into the film forming process area 2〇a (base transport step) The target 22a, 22b is splashed in the film forming process region 20A to form a film formed of a metal crucible on the surface of the substrate S (sputtering step, then the rotating drum 13 is carried to transport the substrate 5 to the reaction process region 60A (base) Carrying step). Before the transport, the reactive gas is introduced in advance in the reaction process zone 6〇A. Then, the plasma of the reactive gas is generated inside the reaction process zone 6〇A and reacted with the metal of the film. To convert the metal ruthenium into ruthenium oxide (plasma treatment step). Then, 'rotate the rotating cylinder 13 and repeat the above-mentioned sputtering step and electropolymerization treatment step' to continue to form a film before the film thickness becomes a predetermined film, This Forming the first film F1 (the first film forming step follows the formation of the second film F2 on the surface of the first 臈F1. First, the substrate S is transported into the film forming process region 40A by extinguishing the dried portions 42a, 42b. : a film formed by forming a metal crucible on the surface of the first film F 1 (sputtering step). The substrate S is transported to the reaction process region 60A by the rotation of the rotating cylinder 13. In the reaction process region 6〇a Internally, the plasma of the reactive gas is generated and reacted with the metal of the film to convert the metal ruthenium into ruthenium pentoxide (plasma treatment step). Then 'rotating the rotating cylinder 13 and repeating the above-mentioned sputtering step a plurality of times The electric charging process step 'continues to form a film before reaching a predetermined film thickness, thereby forming the second film F2 (second film forming step). 23 200928460 Furthermore, the above-mentioned first is repeated until the desired number of films is reached. a film formation step and a second formation step to form a portion of the dielectric film F (dielectric abdomen formation step). Next, an absorption film A is formed on the surface of the dielectric film F. First, the substrate S is transported. To the film formation process area 4〇a, by pairing 42a, 42 b is splattered to form a thin film of metal tantalum on the surface of the dielectric film|7 (sputtering process). Then, the rotating drum 13 is rotated and the above-described sputtering step is repeated a plurality of times until the predetermined film thickness is reached. The film is formed to form the absorption film A (the absorption film forming step). Further, the substrate S on which the absorption film A is formed is repeatedly subjected to the dielectric film formation step, and the dielectric film is formed on the surface of the absorption film A. F. Thereby, the multilayer film M having the final desired optical characteristics is formed. After the film formation is completed, the rotation of the rotary cylinder 13 and the supply of the gas are stopped, and the rotary cylinder 13 is transported to the load lock chamber 11B. Thereafter, the lock chamber is loaded. 11B is open to the air, and the substrate S is removed from the rotating cylinder 13. φ As described above, the thin film forming apparatus 1 of the present embodiment includes the film forming process region 2A and the film forming process region 40A which adhere to the film raw material composed of the dissimilar materials, so that even the dielectric film f and the absorption are performed. The film A is formed by laminating a dissimilar metal material. It is still unnecessary to release the vacuum state of the vacuum vessel 11 to exchange the targets. Therefore, it is possible to shorten the takt time required for the manufacture of the optical filter p. In the above example, the absorption film A forms a metal ruthenium which is not reacted with the reactive gas, and when the absorption film A uses an incomplete reaction product of the metal ruthenium and the reactive gas, the sputtering step is followed by the sputtering step. The substrate s is transported to the 24 200928460 reaction process zone 60A, and the metal ruthenium is subjected to a plasma treatment of a reactive gas (plasma treatment step). Further, in the above example, only the tantalum is used as the metal element constituting the second film F2i, but the material of the second film F2 may be an alloy composed of two kinds of metal elements. In this case, a thin film of an alloy composed of two kinds of metal elements can be formed on the surface of the substrate S by sputtering the target 22a, 22b made of a different material with the target. EXAMPLES Next, an embodiment of the optical filter P was actually produced. In each of the examples, the film forming apparatus i shown in Fig. 2 was used to form the optical filter p. The optical filter p was formed under various conditions shown in the respective examples, and the transmittance of 4 〇 0 to 700 nm was measured. (Example 1: ND filter) The materials of the dielectric film F and the absorbing film A were each made of ruthenium and osmium, and the transmittance was about 12. /. Optical filter P (ND filter). Such an ND filter requires a characteristic that the penetration intensity of the visible light region (4 〇〇 to 7 〇〇 nm) is equally attenuated, and is used for, for example, an "aperture" of a camera. The film formation conditions are as follows. <Film formation conditions> Dielectric film F (first film F1): yttrium oxide (si〇2) Dielectric film F (second film F2): ruthenium pentoxide (Nb2〇5) Absorption film A ( 2nd layer, 5th layer): Metal ruthenium (metal Nb) Target 22a, 22b: Metal ruthenium target 42a, 42b: Metal 铌25 200928460 Electricity (metal 矽): 4.4W/cm2 Power (metal 铌): 2.7W/ Cm2 supply gas (film formation process area 20A, 40A): argon supply gas (reaction process zone 60 A): oxygen pressure: 0.35 Pa Table 1 Layer number film thickness (nm) from the surface of the substrate S 1 Nb205 76.07 2 Metal Nb 12.72 3 Nb205 30.04 4 Si02 50.20 5 Metal Nb 10.45 6 Nb205 45.78 7 Si02 89.53 ❹ Fig. 3 shows the results of measurement of the transmittance and reflectance of the ND filter of Example 1. As shown in the figure, it is understood that the ND filter of Example 1 exhibits a substantially flat permeability characteristic of about 12% in the range of the visible light region wavelength of 400 to 700 nm. (Example 2: ND Green filter) The same as in the first embodiment, the optical filter p (nd Green filter) which penetrates the green wavelength range as a center is used. Such an ND Green filter is used, for example, for "light green" illumination for a microscope display memory or RGB tone correction for a projector using a color wheel 26 200928460. The film formation conditions are as follows. <Film formation conditions> Dielectric film F (first film F1): yttrium oxide (SiO 2 ) Dielectric film F (second film F2): ruthenium pentoxide (Nb205) Absorption film A (13th layer) : metal ruthenium (metal Nb) target 22a, 22b: metal ruthenium target 42a, 42b: metal 铌❹ power (metal ruthenium): 4.4 W/cm 2 power (metal ruthenium): 2_7 W/cm 2 supply gas (film formation process area 20A, 40A): Argon gas supply gas (reaction process zone 60A): Oxygen gas pressure: 0.35 Pa Table 2 Layer number from the surface of the substrate S Film thickness (nm) 1 Nb2〇5 61.39 2 Si02 117.16 3 Nb2〇 5 97.28 4 Si〇2 92.22 5 Nb2〇5 51.42 6 Si02 45.96 7 Nb205 24.30 8 Si02 87.17 27 200928460 9 Nb205 50.27 10 SiO, 89.07 11 Nb2〇5 54.30 12 Si〇2 168.49 13 Metal Nb 32.49 14 Si〇2 162.93 15 Nb2〇5 56.92 16 Si02 292.62 17 Nb2〇5 87.47 _ 18 Si02 198.13 Fig. 4 shows the results of measurement of the transmittance of the ND Green filter of Example 2. As seen in the figure, it is understood that the ND Green filter of Example 2 exhibits a substantially flat transmittance characteristic of about 15% in the visible light region wavelength range of 480 to 580 nm and the other wavelength range is substantially the transmittance 〇. As described above, from the results of Examples 1 and 2, it is understood that an optical filter having desired optical characteristics can be produced even if two kinds of metal elements are used as a material to form a multilayer film. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a sectional shape of an optical filter. Fig. 2 is a view showing a state in which the inside of the film forming apparatus is viewed from above. Fig. 3 shows the transmittance and reflectance of the optical filter of Example 1. Figure 4 shows the transmittance of the optical filter of Example 2. [Main component symbol description] 28 200928460
1 ： 薄膜形成裝置 11 ： 真空容器 11A :膜形成室 11B :加載互鎖室 11C :扉 12 ： 分隔壁 13 ： 旋轉筒 14 ： 分隔壁 15 ： 真空泵 18 ： 筒旋轉軸 19 ： 分隔壁 20 ： 濺鍍手段 20A :成膜過程區域 21a :磁控管濺鍍電極 21b :磁控管濺鍍電極 22a :把 22b :乾 23 : 交流電源 24 : 變壓器 30 : 濺鍍氣體供給手段 31 : 濺鍍氣體筒 32 : 質量流量控制器 40 : 濺鍍手段 40A :成膜過程區域 29 200928460 41a :磁控管濺鍍電極 41b:磁控管濺鍍濺鍍電極 42a :靶 42b :靶 43 :交流電源 44 :變壓器 50 :濺鍍氣體供給手段 5 1 :濺鍍氣體筒 52 :質量流量控制器 60 :電漿發生手段 60A :反應過程區域 61 :盒體 62 :介電質板 63 :天線 64 :高頻電源 65 :匹配箱 70 :反應性氣體供給手段 71 :反應性氣體筒 72 :質量流量控制器 73 :鈍性氣體筒 74 :質量流量控制器 P :光學濾器 S :基材 Μ :多層膜 30 200928460 F :介電質膜 F1:第1膜 F2 :第2膜 A :吸收膜1 : Film forming apparatus 11 : Vacuum vessel 11A : Film forming chamber 11B : Loading interlocking chamber 11C : 扉 12 : Partition wall 13 : Rotating cylinder 14 : Partition wall 15 : Vacuum pump 18 : Tube rotating shaft 19 : Partition wall 20 : Splashing Plating means 20A: film forming process area 21a: magnetron sputtering electrode 21b: magnetron sputtering electrode 22a: 22b: dry 23: AC power supply 24: transformer 30: sputtering gas supply means 31: sputtering gas cylinder 32: mass flow controller 40: sputtering means 40A: film forming process area 29 200928460 41a: magnetron sputtering electrode 41b: magnetron sputtering sputter electrode 42a: target 42b: target 43: AC power source 44: transformer 50: Sputter gas supply means 5 1 : Sputter gas cylinder 52 : Mass flow controller 60 : Plasma generating means 60A : Reaction process area 61 : Case 62 : Dielectric plate 63 : Antenna 64 : High frequency power supply 65 : matching tank 70 : reactive gas supply means 71 : reactive gas cylinder 72 : mass flow controller 73 : passive gas cylinder 74 : mass flow controller P : optical filter S : substrate Μ : multilayer film 30 200928460 F : Dielectric film F1: first film F2: second film A: absorption film