TW200925326A - Sarcosine compound for using as corrosion inhibitor - Google Patents
Sarcosine compound for using as corrosion inhibitor Download PDFInfo
- Publication number
- TW200925326A TW200925326A TW96146484A TW96146484A TW200925326A TW 200925326 A TW200925326 A TW 200925326A TW 96146484 A TW96146484 A TW 96146484A TW 96146484 A TW96146484 A TW 96146484A TW 200925326 A TW200925326 A TW 200925326A
- Authority
- TW
- Taiwan
- Prior art keywords
- acid
- sarcosine
- compound
- creatinine
- salt
- Prior art date
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- FSYKKLYZXJSNPZ-UHFFFAOYSA-N N-methylaminoacetic acid Natural products C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 title claims abstract description 144
- 239000003112 inhibitor Substances 0.000 title claims abstract description 112
- 238000005260 corrosion Methods 0.000 title claims abstract description 88
- 230000007797 corrosion Effects 0.000 title claims abstract description 88
- -1 Sarcosine compound Chemical class 0.000 title claims abstract description 84
- 108010077895 Sarcosine Proteins 0.000 title claims abstract description 76
- 229940043230 sarcosine Drugs 0.000 title claims abstract description 71
- 239000000203 mixture Substances 0.000 claims abstract description 61
- 238000000227 grinding Methods 0.000 claims abstract description 59
- 239000000126 substance Substances 0.000 claims abstract description 47
- 238000004140 cleaning Methods 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 23
- 230000008569 process Effects 0.000 claims abstract description 16
- 239000012459 cleaning agent Substances 0.000 claims abstract description 15
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000012964 benzotriazole Substances 0.000 claims abstract description 6
- DDRJAANPRJIHGJ-UHFFFAOYSA-N creatinine Natural products CN1CC(=O)NC1=N DDRJAANPRJIHGJ-UHFFFAOYSA-N 0.000 claims description 78
- 230000000052 comparative effect Effects 0.000 claims description 65
- 229940109239 creatinine Drugs 0.000 claims description 62
- 239000010949 copper Substances 0.000 claims description 59
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 56
- 229910052802 copper Inorganic materials 0.000 claims description 55
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid group Chemical group C(CC(O)(C(=O)O)CC(=O)O)(=O)O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 35
- 150000003839 salts Chemical class 0.000 claims description 35
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 30
- 238000005498 polishing Methods 0.000 claims description 29
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000002245 particle Substances 0.000 claims description 19
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 15
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 15
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 15
- 239000002253 acid Substances 0.000 claims description 15
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 15
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 15
- 239000002904 solvent Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- BACYUWVYYTXETD-UHFFFAOYSA-N N-Lauroylsarcosine Chemical compound CCCCCCCCCCCC(=O)N(C)CC(O)=O BACYUWVYYTXETD-UHFFFAOYSA-N 0.000 claims description 13
- 229910052708 sodium Inorganic materials 0.000 claims description 13
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- 238000012360 testing method Methods 0.000 claims description 13
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 12
- 235000015165 citric acid Nutrition 0.000 claims description 12
- 239000007800 oxidant agent Substances 0.000 claims description 12
- 229940048098 sodium sarcosinate Drugs 0.000 claims description 12
- ZUFONQSOSYEWCN-UHFFFAOYSA-M sodium;2-(methylamino)acetate Chemical compound [Na+].CNCC([O-])=O ZUFONQSOSYEWCN-UHFFFAOYSA-M 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 10
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- 239000002002 slurry Substances 0.000 claims description 10
- NGOZDSMNMIRDFP-UHFFFAOYSA-N 2-[methyl(tetradecanoyl)amino]acetic acid Chemical compound CCCCCCCCCCCCCC(=O)N(C)CC(O)=O NGOZDSMNMIRDFP-UHFFFAOYSA-N 0.000 claims description 9
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims description 9
- 235000004279 alanine Nutrition 0.000 claims description 9
- 230000003628 erosive effect Effects 0.000 claims description 9
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 8
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 8
- 150000007513 acids Chemical class 0.000 claims description 8
- 239000003599 detergent Substances 0.000 claims description 8
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 8
- 108700004121 sarkosyl Proteins 0.000 claims description 8
- KSAVQLQVUXSOCR-UHFFFAOYSA-M sodium lauroyl sarcosinate Chemical compound [Na+].CCCCCCCCCCCC(=O)N(C)CC([O-])=O KSAVQLQVUXSOCR-UHFFFAOYSA-M 0.000 claims description 8
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- 235000002906 tartaric acid Nutrition 0.000 claims description 8
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- BBOPKBHSDDSVFS-UHFFFAOYSA-N 1-chloro-4-ethoxy-2-fluorobenzene Chemical compound CCOC1=CC=C(Cl)C(F)=C1 BBOPKBHSDDSVFS-UHFFFAOYSA-N 0.000 claims description 6
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 6
- 244000147568 Laurus nobilis Species 0.000 claims description 6
- 235000017858 Laurus nobilis Nutrition 0.000 claims description 6
- 235000005212 Terminalia tomentosa Nutrition 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 239000000356 contaminant Substances 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000000624 total reflection X-ray fluorescence spectroscopy Methods 0.000 claims description 6
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 5
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 claims description 5
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 5
- 235000011054 acetic acid Nutrition 0.000 claims description 5
- 230000002378 acidificating effect Effects 0.000 claims description 5
- 239000001361 adipic acid Substances 0.000 claims description 5
- 235000011037 adipic acid Nutrition 0.000 claims description 5
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 5
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- 239000004310 lactic acid Substances 0.000 claims description 5
- 235000014655 lactic acid Nutrition 0.000 claims description 5
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 5
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- 235000011090 malic acid Nutrition 0.000 claims description 5
- 210000003205 muscle Anatomy 0.000 claims description 5
- 238000011160 research Methods 0.000 claims description 5
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 5
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 claims description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 4
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- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 4
- DIOYAVUHUXAUPX-KHPPLWFESA-N Oleoyl sarcosine Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)N(C)CC(O)=O DIOYAVUHUXAUPX-KHPPLWFESA-N 0.000 claims description 4
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
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- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 4
- LOGBRYZYTBQBTB-UHFFFAOYSA-N butane-1,2,4-tricarboxylic acid Chemical compound OC(=O)CCC(C(O)=O)CC(O)=O LOGBRYZYTBQBTB-UHFFFAOYSA-N 0.000 claims description 4
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- 230000005764 inhibitory process Effects 0.000 claims description 4
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 4
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- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 4
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- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 claims description 3
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- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 claims description 2
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- 235000001014 amino acid Nutrition 0.000 claims description 2
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- WGLDZLZWKPBBLK-UHFFFAOYSA-N aminomethyl dimethyl phosphate Chemical compound COP(=O)(OC)OCN WGLDZLZWKPBBLK-UHFFFAOYSA-N 0.000 claims description 2
- 238000004458 analytical method Methods 0.000 claims description 2
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- CEYULKASIQJZGP-UHFFFAOYSA-L disodium;2-(carboxymethyl)-2-hydroxybutanedioate Chemical compound [Na+].[Na+].[O-]C(=O)CC(O)(C(=O)O)CC([O-])=O CEYULKASIQJZGP-UHFFFAOYSA-L 0.000 claims description 2
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- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 claims 14
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- BTURAGWYSMTVOW-UHFFFAOYSA-M sodium dodecanoate Chemical compound [Na+].CCCCCCCCCCCC([O-])=O BTURAGWYSMTVOW-UHFFFAOYSA-M 0.000 claims 6
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- 125000003696 stearoyl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 2
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Abstract
Description
200925326 九、發明說明: 【發明所屬之技術領域】 本發明係有關一種作為腐蝕抑制劑之肌胺酸或肌胺 酸化合物,目的在提供一種用於化學機械研磨組成物之腐 蝕抑制劑,可提高加工物件之抑制腐蝕能力,且不會在研 磨物件表面殘留有殘渣,或者於後CMp潔淨時可保護加工 物件表面避免被腐蝕之腐蝕抑制劑。 ® 【先前技術】 ’200925326 IX. Description of the Invention: [Technical Field] The present invention relates to a creatinine or a sarcosine compound as a corrosion inhibitor, and aims to provide a corrosion inhibitor for chemical mechanical polishing of a composition, which can be improved The corrosion resistance of the processed object does not leave any residue on the surface of the abrasive article, or protects the surface of the workpiece from corroded corrosion inhibitor when the CMp is clean. ® [Prior Art] ’
Ik著電子元件的關鍵尺寸(Critical Dimensi〇n)愈 來愈J及‘線層數的急遽增力口,電阻/電容時間延遲⑽ Ti= Delay)將嚴4影響整體電路的操作速度。為了改善 隨f金屬連線線寬縮小所造成的時間延遲以及電子遷移 可義I·生問題’所以選擇電阻率低與抗電子遷移破壞能力高 之銅導線材料,取代銘合金金屬。然而,由於銅金屬具有 不易蝕刻的特性,必須改採另—種鑲嵌(Damascene)方式 © 來形成銅金屬導線。 鑲嵌(Damascene)方式製裎有別於傳統先定義金屬圖 案再以介電層填溝的金屬化製裎,其方法是先在一平坦的 介電上蝕刻出金屬線的溝槽後,再將金屬層填入,最後將 多餘的金屬移去,而得到一具有金屬鑲嵌於介電層中的平 一、°構鑲嵌式製程比起傳統的金屬化製程具有以下優 點:=)可使基底表面隨時保持平坦;(2)可排除傳統製 程中”電材料不易填入金屬導線間隙的缺點:(3)可解決 金屬材料蝕刻不易的問題,特別是銅金屬的蝕刻。 200925326 =外’為克服傳統内連線的製程中接觸窗構造與導線 f案砝刀別製作,使得整個製程步驟極其繁複的缺,點,目 則另,展出一種雙鑲嵌(dual damascene)製程,其製作 過程是進行兩次選擇性蝕刻,分別將導線介電質(line dielectric)與介層介電質(viadieiec1:ric)钱開後, 二次=完金屬層與插塞的阻障層,並一次將導電金屬填入 介層窗和内連線溝槽,達到簡化製程步驟的致果。近年 Ο ❹ ^需為i配^収核]、化的發㈣及提高料操作速度 的需求具有低電阻常數和高電子遷移阻抗的銅金 逐漸被應用來作為金屬内連線的材質,取代以往么 製程技術。鋼金屬的鑲嵌式内連線技術,不僅可達到 線的縮小化並且可減少^時間延遲,同時也解、, =不易的問題’因此已成為現今多重内連社要的發 無論是單職或雙職的銅製程,在完成銅 充後都需要進行平坦化製程,以將介電層上多餘的金h 除。目前,通常藉由化學機械研磨製程來達到此—目紊 通常係將銅-化學機械研磨製程,分為二個步驟。第f二 段係以較快之研磨速率將大部分的銅移除,^加2 出量。第二階段則係以較慢之研磨迷率磨除乘:下之小J 銅’藉以避免對凹槽内之銅造成過度磨餘的現象 ^里 二階段的銅研磨製程,需要更換不同組成的研磨 :’ 以符合不同階段之銅研磨需求。 ,、成物’ 一般而言’金屬層(銅)的化學機械研磨都在汕值約 200925326 4左右的酸性範圍下進行(與介電層在鹼性 同)’而且化學機械研磨組成物通常會添加少’、件下不 過氧化氳)’以提高研磨速率。然而’由於鋼氣化办劑(如 到腐蝕且極易氧化,而且銅無法像鋁會形成自我各易文 層,因此在這樣的條件下研磨過後,最終的鋼化 受到腐蝕的情形,因而嚴重影響到内連線的品” $名有 為解決上述問題’現有技術是在研磨過程沃 蝕抑制劑,如苯并三唑(1H—benz〇triaz〇le;二加一腐 〇免銅金屬或其合金在酸性介f下受到腐钱。^ ’以避 後該苯并三唾會於加工物件(晶片研磨過 殘渣不容易被去離子水等清洗劑清除,使讀加=,且該 片)表面由殘渣而形成不平坦之表面 物件(晶 (晶片)之後續製程。 響•加工物件 【發明内容】 本發明之主要目的即在提供一種用於战 ❹組成物之腐姓抑制劑,可提高加工物件之抑制'研磨 且不會在研磨物件表面殘留有殘渣之腐蝕抑制劑。犯力’ 為達上揭目的,本發明中作為腐蝕抑制劑之肌妒 合物係為肌胺酸及其鹽類化合物,該腐钮抑制劑係用於化 學機械研磨組成物中,可於化學機械研磨時於加^ 、 表面形成一層保護膜,以避免加工物件受到腐蝕,二,之 良習有利用腐蝕抑制劑(例如苯并三唑;BTA),'、、可改 物件表面形成殘渣之缺失。 ;力工 200925326 本發明之另一目的’係該腐蝕抑制劑亦可用於後研磨 清潔劑(post CMP clean agent)中,可保護加工物件表 面免於例如為清潔溶液的侵蝕性質、氧化作用、後清潔腐 蝕、化學所生電流侵蝕、或光感應侵蝕。 【實施方式】 本發明之特點,可參閱本案圖式及實施例之詳細說明 ❹ 而獲得清楚地瞭解。 , 本發明「作為腐蝕抑制劑之肌胺酸化合物」,該腐蝕 抑制劑係為肌胺酸及其鹽類化合物等肌胺酸化合物或其 s物而該腐钱抑制劑係用於化學機械研磨組成物中, 可於化學機械研磨時於加工物件之表面形成一層保護 =萨以避免加工物件受到腐蝕,可提高加工物件之抑制腐 步該化學機械研磨組成物除了腐蝕抑制劑,還進一 匕:有.磨粒、氧化劑、加速劑、抑制劑以及溶劑。 〇 .酸鈉:實例包括,但非限於鍛燒的二氧化矽;自矽 膠;沉^^水解、或魏水解及縮合而成的二氧化石夕溶 分子材料:鍛燒的二氧化鋁;沉澱或鍛燒的二氧化鈦;高 較佳者係^金屬氧化物及高分子材料混合體(hybrid)。 磨,無法遠引化"^谷膠。若磨粒用量過低,不利於機械研 量過高則會所期望之研磨去除率;另-方面,若磨粒用 層的去除率,速^械研磨的效應’増加阻障層及絕緣氧化 實例中,、診功Ϊ容易產生表面磨蝕之研磨缺陷。於一具體 Λ /合膠係佔組成物總重〇 〇1至3〇重量%,較 200925326 佳係佔0. 1至15重量% 。 就研磨銅層之化學機械研磨組成物而言,較佳係使用 過氧化氫作為氧化劑。通常,該氧化劑係佔組成物總重之 0.25至5重量% ,較佳係佔0 5至3重量% 。 用於該化學機械研磨組成物之加逮劑的實例包括,但 非限於擰檬酸、草酸、酒石酸、組胺酸、丙胺酸、或甘胺 酸。该加速劑係用於促進待研磨金屬,例如銅之溶解。提 高研磨組成物中的加速劑添加量,有助於提号金屬層之研 © 磨去除率,適用於第一階段之金屬層研磨。然而,提高研 磨組成物中的加速劑添加量,也會同時增加靜態蝕刻之速 率’不利於第一階段之細微抛光。於一呈體實例中,該加 速劑係佔組成物總重之〇. 〇 1至1 〇重量%,較佳係佔〇. 1 至5重量% ,更佳係佔0.3至3重量% 。 5亥化學機械研磨組成物之腐餘抑制劑及抑制劑,在高 研磨去除率之條件下’有效抑制靜態蝕刻速率,以適用於 第一階段與第二階段之研磨拋光製程,本發明之腐蝕抑制 ❹劑可以為肌胺酸及其鹽類化合物等肌胺酸化合物,該肌胺 酸及其鹽類之實例包括,但非限於肌胺酸(SarC〇Sine)、Ik's critical dimension of electronic components (Critical Dimensi〇n) is getting more and more J and 'the rapid increase of the number of layers, resistance / capacitance time delay (10) Ti = Delay) will affect the operating speed of the overall circuit. In order to improve the time delay caused by the reduction of the line width of the f metal and the electron migration, the copper wire material having a low resistivity and high electron migration resistance is selected to replace the alloy metal. However, since copper metal has a property of being difficult to etch, it is necessary to adopt another Damascene method to form a copper metal wire. The damascene method is different from the conventional metallization method in which a metal pattern is first defined and then filled with a dielectric layer by etching a trench of a metal line on a flat dielectric. The metal layer is filled in, and finally the excess metal is removed, and a flat, inlaid process having a metal inlay in the dielectric layer has the following advantages over the conventional metallization process: =) the substrate surface can be made anytime (2) It can eliminate the shortcomings of "the electrical material is not easy to fill the gap of the metal wire in the traditional process: (3) can solve the problem of difficult etching of the metal material, especially the etching of copper metal. 200925326 = external 'to overcome the traditional In the process of connecting the wire, the contact window structure and the wire f file are not made, which makes the whole process step extremely complicated. In addition, the other is to display a dual damascene process, which is carried out twice. Selective etching, respectively, after the wire dielectric and the dielectric (viadieiec1: ric) are opened, the second = the barrier layer of the metal layer and the plug, and the conductive metal is once Filling in the vias and interconnect trenches to achieve a simplification of the process steps. In recent years, Ο ❹ ^ need to be equipped with n], the hair (4) and the need to improve the material operating speed have low resistance constant and high Electron migration resistance of copper and gold is gradually being applied as a material for metal interconnects, replacing the previous process technology. The inlaid interconnect technology of steel metal can not only achieve line reduction and reduce time delay, but also The solution, the problem is not easy. Therefore, it has become the copper process of today's multiple internal companies. Whether it is a single- or dual-function copper process, after the completion of the copper charging, a flattening process is required to remove the excess on the dielectric layer. Gold h. Currently, this is usually achieved by a chemical mechanical polishing process. The copper-chemical mechanical polishing process is usually divided into two steps. The second stage is the faster grinding rate. Copper removal, ^ plus 2 output. The second stage is to use a slower grinding rate to remove the multiplication: the next small J copper 'to avoid excessive grinding of the copper in the groove ^ two stages Copper grinding process, need to replace different groups Grinding: 'To meet the needs of different stages of copper grinding.,, the general 'General' metal layer (copper) chemical mechanical grinding is carried out in the acidic range of about 200925326 4 (with dielectric layer In the same basic) and chemical mechanical polishing composition usually adds less ', but under the ruthenium oxide' to increase the polishing rate. However, due to the corrosion of the steel gasification agent (such as corrosion and extremely easy to oxidize, and copper can not Like aluminum will form a layer of self-eviability, so after the grinding under such conditions, the final tempering is corroded, thus seriously affecting the product of the interconnect. "The name is to solve the above problem." The prior art is Abrasive inhibitors in the grinding process, such as benzotriazole (1H-benz〇triaz〇le; two plus one ruthenium-free copper metal or its alloys under the acid f. ^ 'In order to avoid the benzotriazine, the surface of the workpiece (the wafer is ground and the residue is not easily removed by a cleaning agent such as deionized water, so that the read plus = and the sheet) is formed by the residue to form an uneven surface object ( The subsequent process of the crystal (wafer). The main object of the present invention is to provide a corrosion inhibitor for the composition of the trench, which can improve the suppression of the processed article 'grinding and not grinding A corrosion inhibitor of residue remains on the surface of the object. In order to achieve the above, the muscle chelating compound as a corrosion inhibitor in the present invention is sarcosine and a salt thereof, and the rotatory button inhibitor is used for In the chemical mechanical polishing composition, a protective film may be formed on the surface during chemical mechanical polishing to avoid corrosion of the processed article. Second, it is preferred to use a corrosion inhibitor (such as benzotriazole; BTA). ', , can be modified to form a residue residue on the surface.; Force 200925326 Another object of the present invention is that the corrosion inhibitor can also be used in a post CMP clean agent to protect The surface of the workpiece is free from, for example, the aggressive nature of the cleaning solution, oxidation, post-cleaning corrosion, chemically induced current erosion, or photo-induced erosion. [Embodiment] The features of the present invention can be referred to the drawings and the details of the embodiments. According to the present invention, the "creatinine compound as a corrosion inhibitor" is a creatinine compound such as sarcosine and a salt compound thereof, or the s The inhibitor is used in the chemical mechanical polishing composition, and can form a layer of protection on the surface of the processed object during chemical mechanical polishing to avoid corrosion of the processed object, and can improve the inhibition of the processed object. Corrosion inhibitors, further improved: abrasive particles, oxidizing agents, accelerators, inhibitors, and solvents. Sodium sulphate: Examples include, but are not limited to, calcined cerium oxide; self-gelling; Dicalcium oxide and condensed molecular materials: calcined alumina; precipitated or calcined titanium dioxide; high preferred And hybrids of polymer materials. Grinding, can not be far-reaching "^ gluten. If the amount of abrasive particles is too low, it is not conducive to the mechanical removal rate is expected to be the highest removal rate; The removal rate of the granular layer, the effect of the rapid mechanical grinding, the addition of the barrier layer and the example of the insulating oxidation, the grinding defects of the surface abrasion are easy to be diagnosed. The specific weight of the composition is in a specific Λ / compound. 〇1 to 3〇% by weight, which is 0.1 to 15% by weight of the 200925326. For the chemical mechanical polishing composition of the ground copper layer, it is preferred to use hydrogen peroxide as the oxidizing agent. Usually, the oxidizing agent accounts for The total weight of the composition is from 0.25 to 5% by weight, preferably from 0.5 to 3% by weight. Examples of the additive for the chemical mechanical polishing composition include, but are not limited to, citric acid, oxalic acid, tartaric acid, group Amino acid, alanine, or glycine. The accelerator is used to promote dissolution of the metal to be ground, such as copper. Increasing the amount of accelerator added to the abrasive composition contributes to the grinding of the metal layer. The grinding removal rate is suitable for the first stage of metal layer grinding. However, increasing the amount of accelerator added in the polishing composition also increases the rate of static etching', which is not conducive to the fine polishing of the first stage. In one embodiment, the accelerator is 〇 至 1 to 1 〇 by weight, preferably from 1 to 5% by weight, more preferably from 0.3 to 3% by weight. 5 Hai chemical mechanical polishing composition of the corrosion inhibitor and inhibitor, under the condition of high grinding removal rate 'effectively suppress the static etching rate, suitable for the first stage and the second stage of the grinding and polishing process, the corrosion of the present invention The inhibitory tincture may be a sarcosine compound such as sarcosine and a salt thereof, and examples of the creatinine and salts thereof include, but are not limited to, sarcosine (SarC〇Sine),
式一 (CH3NHCH2COOH > CAS= 107-97-1) 月桂醢肌胺酸(lauroyl sarcosine)、 200925326Formula 1 (CH3NHCH2COOH > CAS= 107-97-1) Laurel sarcosine, 200925326
(C15H29N〇3 > CAS 97-78-9)(C15H29N〇3 > CAS 97-78-9)
N-酿基肌胺酸(N-acyl sarcosine)、椰油醯基肌胺酸 (cocoyl sarcosine)、油醯肌胺酸(oleoyl sarcosine)、 硬脂醯肌胺酸(stearoyl sarcosine)、及肉莖蔻醯肌胺酸 (myristoyl sarcosine)或其鋰鹽、鈉鹽、鉀鹽、或胺鹽 等或其混合物;例如月桂醯肌胺酸鈉鹽(Sodium n-Lauroyl Sarcosinate) °N-acyl sarcosine, cocoyl sarcosine, oleoyl sarcosine, stearoyl sarcosine, and meat stalks Myristoyl sarcosine or its lithium, sodium, potassium, or amine salt or the like; or a mixture thereof; for example, sodium serotonin sodium salt (Sodium n-Lauroyl Sarcosinate)
Ο 【CH3(CH2)i〇CON(CH3)CH2COONa,CAS 137-16-6】 -般而言,該腐餘抑制劑係佔組成物總重之〇 〇〇〇5 又 至1%,敉隹係佔組成物總重之〇. 001至〇 組成物總重之〇. 〇〇5至〇. 1%。 該抑制劑的實例包括,但非限於化合物;_ 唑類化合物及其衍生物,例如三唑、3_胺; 10 200925326 三唑-5-羧酸、i-H-苯并三唑、或5-曱基-1,2, 3-苯并三 唾。一般而言,該抑制劑係佔組成物總重之〇. 〇〇〇1至1%, 較佳係佔組成物總重之0. 005至0. 8%,更佳係佔組成物 總重之0. 01至0. 5%。 本發明組成物可使用水作為溶劑’較佳係使用去離子 水作為該研磨組成物之溶劑。 以下係藉由特定之具體實施例進一步說明本發明之 特點盘功效,但非用於限制本發明之範_。 ❹ 實施例一 根據表一所列’使用包括平均粒徑約90 nm之二氧 化矽溶膠磨粒、丙胺酸、過氧化氫、1,2, 4-三唑(抑制劑)、 椰油醯基肌胺酸鈉(腐蝕抑制劑)以及溶劑為水之研磨漿 料組成物對照樣品進行測試。其中,該椰油醯基肌胺酸鈉 之化學式如式四:Ο [CH3(CH2)i〇CON(CH3)CH2COONa, CAS 137-16-6] In general, the residual inhibitor is 〇〇〇〇5 to 1% of the total weight of the composition, 敉隹The total weight of the composition is 〇. 001 to the total weight of the composition. 〇〇5 to 〇. 1%. Examples of such inhibitors include, but are not limited to, compounds; azole compounds and derivatives thereof, such as triazoles, 3-amines; 10 200925326 triazole-5-carboxylic acid, iH-benzotriazole, or 5-quinone Base-1,2,3-benzotrisole. 005至0. 8%,更优选的总总总重量重量。 The total weight of the composition of the composition of the total weight of the composition. 〇〇〇1 to 1%, preferably the total weight of the composition of 0. 005 to 0. 8%, better than the total weight of the composition 01至0. 5%。 0. 01 to 0. 5%. The composition of the present invention may use water as a solvent. It is preferred to use deionized water as a solvent for the polishing composition. The features of the present invention are further illustrated by the specific embodiments, but are not intended to limit the scope of the invention.实施 Example 1 according to Table 1 'Use of cerium oxide sol particles including an average particle size of about 90 nm, alanine, hydrogen peroxide, 1,2,4-triazole (inhibitor), cocoyl Sodium sarcosinate (corrosion inhibitor) and a control sample of the slurry slurry composition in which the solvent is water were tested. Wherein, the chemical formula of the sodium citrate sodium sarcosinate is as shown in the formula:
式四 (RCON(CH3)CH2COONa, CAS 61791-59-1) ⑩例1 對照例 氧化劑 (過氧化氫)· (wt% ) 0.7JJ l/f 加速劑 (丙胺酸) (wt% ) 抑制劑 (wt% ) 磨粒 (二氧化矽溶膠) (wt% ) 腐蝕抑制劑 ppm 2.4 ~2Λ ~ΪΛ 0.025 0. 025Formula 4 (RCON(CH3)CH2COONa, CAS 61791-59-1) 10 cases 1 Control oxidant (hydrogen peroxide) · (wt%) 0.7JJ l/f Accelerator (alanine) (wt%) Inhibitor ( Wt%) Abrasive (cerium oxide sol) (wt%) Corrosion inhibitor ppm 2.4 ~2Λ ~ΪΛ 0.025 0. 025
0.1 TT 200925326 I對照例 4 I 0.7 1 2.4 I 0 I 0.1 I 50 表一 研磨試驗係根據下列條件進行,研磨去除率(Removal Rate,RR)及蝕刻速率(Etch Rate)之平均值結果紀錄於表 研磨機台:Mirra polisher (Applied Materials) 晶圓類型:8吋之覆銅薄膜晶圓(Ramco Co) 研磨下壓力:2 psig © 平台轉速: 90 rpm ' 载具轉速:85 rpm 研磨墊:IC 1010(Rohm and Haas) 研漿流速:200 ml/min。 --------- Cu RR@ 1.5psi Cu RR@ 3psi 姓刻速率,A/min 4930 9790 915 對照例2 3257 7729 319 對照例3 7458 >15425 3023 對照例4 1470 >15425 578 表二0.1 TT 200925326 I Comparative Example 4 I 0.7 1 2.4 I 0 I 0.1 I 50 Table 1 The grinding test was carried out according to the following conditions, and the average values of the removal rate (RR) and the etching rate (Etch Rate) were recorded in the table. Grinding machine: Mirra polisher (Applied Materials) Wafer type: 8吋 Copper film wafer (Ramco Co) Grinding pressure: 2 psig © Platform speed: 90 rpm 'Car speed: 85 rpm Grinding pad: IC 1010 (Rohm and Haas) Slurry flow rate: 200 ml/min. --------- Cu RR@ 1.5psi Cu RR@ 3psi Last Name Rate, A/min 4930 9790 915 Control 2 2257 7729 319 Comparative Example 3 7458 >15425 3023 Comparative Example 4 1470 >15425 578 Table II
例1根據表二結果可知,該對照例1與對照例2中,對照 ^之銅研磨去除率及蝕刻速率大於對照例2,而對照例 於董對照例4中,對照例3之銅研磨去除率及蝕刻速率 為腐例4 ’纽、緒果可知’若使用椰油醯基肌胺酸納作 故腐:抑制劑’會大幅降低銅研磨去除率以及刻迷率乍 免供較佳之抑嫩能力’可有效地避 12 200925326 實施例 根據表三所列,對照例5係使用包括平均粒徑約.9〇 ⑽之二氧化矽溶膠磨粒、過氧化氫、氫氧化鉀、苯并三 唑(腐蝕抑制劑),而對照例6則使用包括平均粒徑約9〇 nm之二氧化矽溶膠磨粒、過氧化氫、氳氧化鉀、椰油醯 基肌胺酸鈉(腐蝕抑制劑)以及溶劑為水之研磨漿料組成 氧化劑 (過氡化氫) (wt% ) 磨粒 (二氧化矽溶膠) (wt% ) ΒΤΑ ppm 队口口 J ✓只_J 腐蝕抑制劑 Ppm ㈣° KOH (wt% ) pH 對照例5 0.5 30.0 50 0 0.1 1厂 對照例6. 0.5 30.0 0 50 0.1 11 表三 ❹ 研磨试驗係根據下列條件進行,研磨去除率(Rein〇val Rate ’ RR)之平均值結果紀錄於表四。 研磨機台:Applied Material Mirra Polisher, (San Jose, CA) Ο 晶圓類型:8吋之覆銅,TEOS,鈕薄膜晶圓 研磨下壓力:2psig 平台轉速:70 rpm 载具轉速:65rpm 研磨墊:IC 1010(R〇hm and Haas) 研漿流速:200 ml/min pExample 1 According to the results of Table 2, in Comparative Example 1 and Comparative Example 2, the copper removal removal rate and the etching rate of the control solution were larger than that of the control example 2, and the control example was the copper polishing removal of the comparative example 3 in the comparative example 4 The rate and etching rate are as follows. For example, if you use cocoyl sarcosine as the rot, the inhibitor will greatly reduce the copper removal rate and the engraving rate. Capability 'can effectively avoid 12 200925326 Examples According to Table 3, Comparative Example 5 uses cerium oxide sol particles, hydrogen peroxide, potassium hydroxide, benzotriazole including an average particle size of about 9.9 〇 (10). (Corrosion Inhibitor), while Comparative Example 6 uses cerium oxide sol abrasive particles having an average particle diameter of about 9 Å, hydrogen peroxide, potassium cerium oxide, sodium cocoyl sarcosinate (corrosion inhibitor), and Solvent is water slurry composition oxidant (hydrogen peroxide) (wt%) abrasive particles (cerium oxide sol) (wt%) ΒΤΑ ppm Team mouth J ✓ only _J corrosion inhibitor Ppm (four) ° KOH (wt %) pH Comparative Example 5 0.5 30.0 50 0 0.1 1 Factory Comparative Example 6. 0.5 30.0 0 50 0.1 11 Table 3研磨 The grinding test was carried out according to the following conditions. The average value of the polishing removal rate (Rein〇val Rate 'RR) is shown in Table 4. Grinding machine: Applied Material Mirra Polisher, (San Jose, CA) 晶圆 Wafer type: 8 覆 copper, TEOS, button film wafer grinding pressure: 2 psig platform speed: 70 rpm vehicle speed: 65 rpm polishing pad: IC 1010 (R〇hm and Haas) slurry flow rate: 200 ml/min p
Ox 研磨去除率 (A/min) Cu 研磨去除率 (A/min) Ta 研磨去除率 (A/min) 對照例5 1244 657 633 對照例6 1223 556 601 13 200925326 根#表曰結果可知’該對照例5之銅研磨去除率及 組(Ta)研磨去除率大於鮮照例6,由此結果可知,若使用 椰油酿基肌胺作為腐細㈣劑,會大幅降低銅以及麵 (Ta)之研磨去除率’故以椰油醒基肌胺酸鈉作為腐敍抑制 劑可提t、車又佳之抑制腐麵能力(相較於苯并三唾作為腐钱 抑制劑),可有效地避免加工物件受到腐蚀。 &上述各實施例可知,本發明湘肌胺酸化合物(如 ❹肌喊及其魏化合物)作為化學機械研磨組成物中之腐 蚀抑制劑,與習有利用笨并三唾(1H_benz〇triaz〇ie; bta) 作為腐巧制劑相較’具有較佳之抑制腐钮能力,可避免 加库物腐#且亦不會於研磨物件表面殘留有殘潰 之愔形發峰。 ❹ 另外,本發明之腐餘抑制劑亦可用於後研磨清潔齊 中’該腐财卩㈣雜射Μ㈣岐其賴化合物筹 肌=合物或其混合物,其可保護加工物件表面免於例 如=液的侵蚀性質、氧化作用、後清潔腐餘化學 所生電流知敍、或光感應侵餘。 雖然CMP可有效平坦化加工物件表面,但此程 污染物留在加οι物件表面上,必須施用後研磨清 除此類>可染殘留物。其清潔之目的係要從加二 上移除CMP步驟所留下的殘留物、且 = 屬、在表面上殘留沉積物、或對加工物件 J、 (例如為碳)污染物。此外,保護加 1顯的有摘 物件表面免於各輕 200925326 不同機制的腐餘是理想的,其例如為化學钮刻、化學所生 電腐敍或光感應腐蚀。該加工物件表面的腐触會造成金 屬凹陷且使金屬線薄化。酸性清潔溶液在從加工物件表面 上移除有機污染物與對殘留銅加以錯合上通常係相當有 效率的。因此得到在中度至低度pH值下為有效的清潔劑 將是理想的。酸性化學典型上係使用在用於後CMp清潔的 刷洗箱或超音波清潔單元中。 故該後研磨清潔劑係可包含有酸性化會物及腐蝕抑 〇 制劑,該酸性化合物可以為擰檬酸、草酸、構酸、氨基三 甲基磷酸、1-羥基亞乙基1,1-二磷酸、2_膦酸丁烷_1,2, 4-三羧酸、氨基三亞甲基膦酸、1,4氨酸六甲基-(四曱基)ι, 4 磷酸、1,5磷酸-二乙烯三胺五曱基、丨,5磷酸-六曱基乙烯 三胺五曱基、丙二酸、乳酸、醋酸、丙酸、丁酸、戊酸、 己酸、琥珀酸、己二酸、蘋果酸、馬來酸,酒石酸、甲續 酸、苯磺酸、甲苯磺酸、十二烷基苯磺酸、乙二胺四乙酸、 二乙烯三胺五乙酸、三甘胺酸、N-(羥乙基)乙二胺三乙酸 ❹或其組合物,而該腐蝕抑制劑可以為肌胺酸及其鹽類化合 物等肌胺酸化合物,該肌胺酸及其鹽類之實例包括,但非 限於肌胺酸(sarcosine)、N-醢基肌胺酸(N-acyl sarcosine)、月桂醯肌胺酸(lauroyl sarcosine)、椰油 醯基肌胺酸(cocoyl sarcosine)、油醯肌胺酸(oleoyl sarcosine)、硬脂醢肌胺酸(stearoyl sarcosine)、及肉 莖蔻醯肌胺酸(myristoyl sarcosine)或其鋰鹽、納鹽、 鉀鹽、或胺鹽等或其混合物。. 15 200925326 實施例 根據表五所列,利用對照例7至9成份所組成之後研 磨Μ潔劑,進行後研磨清潔試驗,並比較各對照例中晶圓 ------ 檸檬酸 (wt% ) 草酸 (wt% ) 月桂醯肌胺酸 ppm 椰油醯基肌胺酸 ppm 對照例7 0.2 0.2 0 0 對照例8 0.2 0.2 20 0 對照例9 0.2 0.2 0 20 表五 ν ❹ 後研磨清潔試驗係根據下列條件進行,而利用TXRF (全反射X-射線榮光光譜)分析銅的損耗率(copper loss) 結果紀錄於表六。 晶圓類裂:2個2000A厚之覆銅晶圓 清洗設備:Ontrak post CMP brush box (LamOx grinding removal rate (A/min) Cu grinding removal rate (A/min) Ta grinding removal rate (A/min) Comparative Example 5 1244 657 633 Comparative Example 6 1223 556 601 13 200925326 Root #表曰的结果' The copper polishing removal rate and the group (Ta) polishing removal rate of Example 5 were larger than that of the fresh light example 6. From the results, it was found that the use of coconut oil-based creatinine as a blister (tetra) agent greatly reduced the grinding of copper and surface (Ta). The removal rate is so that the coconut oil can be used as a serotonin inhibitor to improve the ability of the car to inhibit the surface of the rot (compared to benzotriazine as a rot-inhibitor), which can effectively avoid processing objects. Corroded. & Each of the above examples shows that the sclerosine acid compound of the present invention (such as the scorpion scorpion and its Wei compound) acts as a corrosion inhibitor in the chemical mechanical polishing composition, and has a stupid and sedative (1H_benz〇triaz〇). Ie; bta) As a succulent preparation, it has the ability to suppress the corrosion of the button, avoiding the addition of the rot and not leaving a crucible peak on the surface of the abrasive article. In addition, the antiseptic inhibitor of the present invention can also be used for post-grinding cleaning of the qi ' 该 该 四 四 四 四 四 四 四 四 四 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物The erosion property of the liquid, the oxidation, the current known by the post-cleaning chemistry, or the light-induced intrusion. Although CMP can effectively planarize the surface of the workpiece, this process of contaminants remains on the surface of the object and must be removed after application to remove such > dyeable residue. The purpose of cleaning is to remove the residue left by the CMP step from the addition of genus, genus, residual deposits on the surface, or contaminants to the workpiece J, (e.g., carbon). In addition, it is desirable to protect the surface of the object from the surface of the 200925326. The corrosion of the different mechanisms is ideal, such as chemical button etching, chemical susceptibility or photo-induced corrosion. Corrosion on the surface of the workpiece causes metal recesses and thins the wire. Acidic cleaning solutions are generally quite effective at removing organic contaminants from the surface of the workpiece and misaligning the residual copper. It would therefore be desirable to have a cleaner that is effective at moderate to low pH values. Acidic chemistry is typically used in a scrubbing box or ultrasonic cleaning unit for post CMp cleaning. Therefore, the post-grinding cleaning agent may comprise an acidifying agent and a corrosion inhibiting agent, and the acidic compound may be citric acid, oxalic acid, phytic acid, aminotrimethylphosphoric acid, 1-hydroxyethylidene 1,1- Diphosphate, 2-phosphonic acid butane-1,2,4-tricarboxylic acid, aminotrimethylenephosphonic acid, 1,4-hexamethyl-(tetradecyl) ι, 4-phosphoric acid, 1,5-phosphoric acid - Diethylene triamine pentadecyl, hydrazine, 5 phosphate - hexamethylethylene triamine pentadecyl, malonic acid, lactic acid, acetic acid, propionic acid, butyric acid, valeric acid, caproic acid, succinic acid, adipic acid , malic acid, maleic acid, tartaric acid, methyl acid, benzenesulfonic acid, toluenesulfonic acid, dodecylbenzenesulfonic acid, ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, triglycine, N- (hydroxyethyl) ethylenediaminetriacetic acid ruthenium or a combination thereof, and the corrosion inhibitor may be a sarcosine compound such as sarcosine and a salt thereof, and examples of the sarcosine and salts thereof include Not limited to sarcosine, N-acyl sarcosine, lauroyl sarcosine, cocoyl sarcosine, oil 醯Oleoyl sarcosine, stearoyl sarcosine, and myristoyl sarcosine or a lithium salt, a sodium salt, a potassium salt, or an amine salt thereof, or a mixture thereof. 15 200925326 EXAMPLES According to Table 5, after using the components of Comparative Examples 7 to 9 to grind the detergent, perform a post-grinding cleaning test, and compare the wafers in each of the comparative examples - citric acid (wt %) Oxalic acid (wt%) Laurel Creatine ppm ppm Cocoyl creatinine ppm Comparative Example 7 0.2 0.2 0 0 Comparative Example 8 0.2 0.2 20 0 Comparative Example 9 0.2 0.2 0 20 Table 5 ν ❹ Post-grinding cleaning test The results of the copper loss analysis using TXRF (total reflection X-ray glory spectroscopy) are shown in Table 6. Wafer cracking: 2 2000A thick copper wafer cleaning equipment: Ontrak post CMP brush box (Lam
Research, CA USA) 清洗劑流速:300 ml/minResearch, CA USA) Cleaning agent flow rate: 300 ml/min
Cu損耗率(A/min) 對照例7 21.66 對照例8 16.47 對照例9 13.34 表六 ❹ 根據表六結果可知,該對照例8及9之銅損耗率小於 對照^7,故添加有月桂醯肌胺酸或揶油醯基肌胺酸之後 研磨清潔劑可有效抑制銅的損耗。 200925326 實施例四 根據表七所列’利用對照例7至9成份所組成之後研 磨清潔劑,進行後CMP清潔試驗,並比較各對照例中晶圓 表面銅的損耗率。 檸檬酸 (wt% ) 十二烧基苯續酸 椰油醯基肌胺酸鈉 ppm (wt% ) 對照例10 0.25 0.0085 0 對照例11 0.25 0.0085 10 表七Cu loss rate (A/min) Comparative Example 7 21.66 Comparative Example 8 16.47 Comparative Example 9 13.34 Table 6 ❹ According to the results of Table 6, the copper loss rate of the Comparative Examples 8 and 9 was smaller than that of the control ^7, so the laurel muscle was added. Grinding the cleaning agent after the amine acid or the oleic acid thioglycolic acid can effectively suppress the loss of copper. 200925326 Example 4 According to Table VII, after the composition of Comparative Examples 7 to 9 was used, the cleaning agent was ground, and the post-CMP cleaning test was performed, and the loss rate of copper on the wafer surface in each of the comparative examples was compared. Citric acid (wt%) dodecylbenzene benzoate sodium cocoyl creatinine ppm (wt%) Comparative Example 10 0.25 0.0085 0 Comparative Example 11 0.25 0.0085 10 Table VII
後研磨清潔試驗係根據下列條件進行,而利用TXRF (全反射X-射線螢光光譜)分析銅的損耗率(copper loss) 之平均值結果紀錄於表八。 晶圓類型:2片2000A厚之覆銅晶圓 清洗單元:Ontrack post CMP brush box (Lam Research, CA USA) 清洗劑流速:300 ml/min 清洗時間:50秒 銅損耗率平均值 A/min 對照例10 13.92 對照例11 11.71 表八 根據表八結果可知,該對照例11之銅損耗率小於對 照例10,故添加有椰油醯基肌胺酸鈉之後研磨清潔劑可 有效抑制銅的彳貝耗。 由上述實施例三、四可知,本發明利用肌胺酸化合物 17 200925326 (如肌胺酸及其鹽類化合物)作為之後研磨清潔劑中之腐 蝕抑制劑,可保護加工物件表面免於例如為清潔溶液的侵 蝕性質、氧化作用、後清潔腐蝕、化學所生電流侵蝕、或 光感應侵#之後研磨清潔劑添加物。 本發明之技術内容及技術特點巳揭示如上,然而熟悉 本項技術之人士仍可能基於本發明之揭示而作各種不背 離本案發明精神之替換及修飾。因此,本發明之保護範圍 應不限於實施例所揭示者,而應包括各種不背離本發明之 ❹替換及修飾,並為以下之申請專利範圍所涵蓋。 【圖式簡單說明】 【主要元件代表符號說明】 益 Ο 18The post-grinding cleaning test was carried out according to the following conditions, and the average value of the copper loss (copper loss) analyzed by TXRF (total reflection X-ray fluorescence spectroscopy) is shown in Table 8. Wafer type: 2 sheets of 2000A thick copper wafer cleaning unit: Ontrack post CMP brush box (Lam Research, CA USA) Cleaning agent flow rate: 300 ml/min Cleaning time: 50 seconds copper loss rate average A/min Example 10 13.92 Comparative Example 11 11.71 Table 8 According to the results of Table 8, the copper loss rate of the comparative example 11 is smaller than that of the control example 10. Therefore, the grinding detergent can effectively inhibit the copper mussels after the addition of sodium cocoyl-sodium sarcosinate. Consumption. It can be seen from the above Examples 3 and 4 that the present invention utilizes the sarcosine compound 17 200925326 (such as sarcosine and its salt compound) as a corrosion inhibitor in the subsequent abrasive cleaning agent, which can protect the surface of the processed article from being cleaned, for example. The cleaning agent additive is ground after the erosion properties of the solution, oxidation, post-cleaning corrosion, chemically induced current erosion, or light induced intrusion. The technical content and technical features of the present invention are disclosed above, but those skilled in the art can still make various substitutions and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the present invention should be construed as being limited by the scope of the appended claims [Simple description of the diagram] [Description of main components representative symbols] Benefits Ο 18
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