200924218 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種發光二極體發光用之封裝裝置及其發光裝置特 別是指一種可增加使用效能之串並聯結構之發光二極體封裝'裝置^其光 裝置。 '、一 【先前技術】 請參閱第-A圖與第-B圖，其係為習知技術之多顆晶片發光二極體 之燈座之上視圖與第- A圖之A-A方向剖視圖，習知的發光二極體之燈座 包含一基板ίο，基板ίο為一金屬或陶瓷，基板10上設有一絕緣層12，絕 緣層12 »^兩側各設有-支或多支支架14，習知發光二極體晶片16若做矩 陣式的排列，皆以將複數個發光二極體晶片16排列於基板1()後並將發 光二極體晶片16以打線的方式串連，再將整串的發光二極體晶片16並聯 於支架14，如此當-發光二極體晶片16損毀時，整串發光二極體晶片16 都會不亮。 另外，習知發光二極體晶片16之燈座串並聯設計時，都需要利用打線 的方式，將晶片打線於晶片，如此則容易造成發光二極體晶片16的損傷或 紅路。發光二極體晶片16僅能打線在兩侧的支架14使電路導通，且因考 慮到打線長度’故當晶片隔開距離不宜過大，因此晶片的排列方式被限制。 ^且*晶>{有故障，需更換發光二極體晶片16時，因設計為晶片打線於晶 ☆聯、構故必須利用打線的方式將舊晶片與新晶片電性相接如此則 各易會造成舊晶片的損傷或短路，更增加修復習知燈座之不便。 因此本發明提供一種串並聯結構之發光二極體封裝裝置及其發光裝 其係不使毀損的發光二極體晶片影響其他正常的發光二極體晶片的使 並且便於更換壞損的發光二極體晶片，如此可解決上述之問題。 200924218 【發明内容】 > 要目的，在於提供一種串並聯結構之發光二極體封裝裝置 及,、發光裝置，其储由相鄰之金屬導線支架之間可供設置—發光二極 體讓毛光一極體曰曰片之正負極連接用的打線區陳列在各晶片中間，不但 更；發光彳赠阳>{打線，並且避免打線孤度過於平緩及金線過長而影響 發光-極u的裝配良率，更可於發光二極體晶肢損或是故障時不影 響其他發光二極體晶片之正常使用。 本發月之-人要目的，在於提供_種串並聯結構之發光二極體封裝裝置 及其發光裝置，其鋪由—上絕緣層設置—集光槽，並使發光二極體晶片 位於集光槽内’如此以增加發光二極體的光源使用效率。 本發明之另-目的，在於提供一種串並聯結構之發光二極體發光裝 其係於上絕緣層設置複數_助金屬導線支架，如此可使發光二極體 晶片正負雜經由習知的打線方式連接於金屬導線支架 ，如此使發光二極 體晶片於配置上較有彈性。 本發明之_細結構之發光二極體練裝置及其發絲置，該封裝裝 置包含-基板、-個下絕緣層、複數個隔離的金屬導線支架、至少一正負 電極及其向外延伸的導電接腳、—上絕緣層與複數個發光二極體固晶區； 下絕緣層設置於基板上方；複數個金料線支㈣·τ_層上方，每 金屬導線支架相距-間隔；上絕緣層麟下絕緣層上方，金屬導線支架 2上絕緣層與下絕緣層之間，上鱗層設有一集光槽 ;發光二極體固晶 區設於基板纽於相鄰之金屬導線枝之間，就二極翻位於集光 槽内。該發光裝置係於封裝裝置之固晶區設置一發光二極體晶片，發光二 極體晶片祕於相鄰之金屬導線支架。如此讓發光二極體晶片之打線區陳 列在各晶>{巾間’崎免打線弧度過於平緩及金線職而辟發光二極體 晶片的裝配良率’更可於當發光LU失效或是故_不影響其 他發光二極體晶片之正常使用。 200924218 【實施方式】 兹為使貴審查委員對本發明之結構特徵及所達成之功效有更進一牛 =置社娜_心㈣㈣ 裝=基之：一： 、、曰〇、複數個金屬導線支架50、複數個發 體固ΒΒ區55與-上絕緣層7G，·下絕緣層仙設置於基板3G上方，下 中财複油祕軌洞，顧發^鋪固晶區55;複數個金 導線支架50设置於下絕緣層40上方，金屬導線支架5〇的大部份厚度被 下絕緣層40所包覆，每-金屬導線支架5()相距—間隔，上絕緣層7〇設於 下絕緣層40上方，金屬導線支架5〇位於上絕緣層7〇與下絕緣層4〇之間， ^絕緣層70設有-集光槽75;發光二極體固晶區55設於下絕緣層4〇的隔 離孔洞，並位於相鄰之金屬導線支㈣之間，發光二極體固晶區55位於 集先槽75内。下絕緣層40與上絕緣層7〇為射出一體成型之設計，於製作 時，將金屬導線支架50以-定位裝置夹持，並且以射出成型的方式製作下 絕緣層40與上絕緣層70，使下絕緣層4〇與上絕緣層7〇形成一絕緣座並 且使金屬導線支架50嵌於下絕緣層4〇與上絕緣層7〇之間。 本發明之發光裝置如圖二B所示’其胁本發騎裝裝置之發光二極 體固aa區55设置-發光二極體晶片60，亦即複數個發光二極體晶片設 ^基板30並位於相鄰之金料線支架5〇之間，且發光二極體晶片6〇利用 習知的打金線連財式或使雜相接於轉之金屬導線支架5()。藉由相鄰 之金屬導線支架50以將位於相鄰之金屬導線支架5〇之間的發光二極體晶 片60之正極或負極相互導通。如此可於一個或多個發光二極體晶片叨毁 才貝或是故障時，藉由金屬導線支架5〇以將電流傳導至其他沒有毀損或故障 之發光二極體晶片60,如此則不會影響其他發光二極體晶片6〇之正常使 用’另裝配時外側附有複數個鎖配孔，鎖配孔86貫穿上絕緣層7〇與下絕 200924218 緣層40。如此於基板30後端鎖配一散熱模組時，藉由鎖配孔86可緊密與 後端散熱模組貼合。 基板30讀料為高散熱金屬材料或陶紐料，例如铭或銅材或氮化铭 (A1N)或梦，發光二極體晶片6〇設於基板加，藉由基板3()與發光二極體晶 片60的接觸，以將發光二極體晶片6〇通電產生之熱能快速導出。而相鄰 之發光二極體晶片6G邊與邊之隔開距離大於發光二極體晶片6()之二分之 -長度或二分之-寬度以上。使相鄰之發光二極體晶片6()的隔麻離達發 光-極體晶片60尺寸的G.5倍以上，如此可以有效控制發光二極體晶片6〇 下的熱源擴餘應’不相為晶片與晶片之_距離太小而造成熱聚集現 象’導致發光二極體晶片60的溫度過高。基板3〇上方設置下絕緣層4〇， 下絕緣層4G可避免金屬導線支架5G與基板3()接觸而短路。如此使本發明 具有高散敵功效，並達職電分_效果。金麟線支㈣之材料最佳 選擇是銅材，也可以是鐵材或是崎，金屬導線支㈣之外層可電鑛錄銀， 以增加金線打線黏合力。 本發明之發光二極體晶片6〇位於兩片相鄰之金屬導線支架5()之間， 讓連接發光二極體晶片6G之打線區陳列在各晶片中間，容易讓晶片以率並 聯方式連接電路’如此不需縣了驗打_長度錢打齡置設於各晶 片之兩端，故可避免㈣弧度祕平錄過絲 ⑼的裝喊率及時的可纽。本發明由於金屬導線妓5G本拍^ 使整個發光二極體晶片⑼不會因為有任—發光二極體晶片6〇毀損 =故障時影響其他發光二極體之正常使用。本發明之發光二極體晶片6〇 ^任:失效錢_容祕復，且不會輕其他發光二鋪^ 6g再次打 ^而找。更換簡献轉的發光二鋪^⑼時 6(1及其細嫌娜咖M雜，重= 曰正常打紅柳可無敎動其他未轉之發光二極體 二二曰片6〇其他晶片毀損的的情況產生， 更增加發先二極體晶片6〇之更換效率。而且本發明之發光二極體晶片60 200924218 固晶=位=照谢，以更娜_賴_來做各種排列。 發光二Γ杯狀或是其他幾何圖形。藉由集光槽75將每一 及光通量，上絕緣層7°二= 内側表面電繼或銀，以增加集光槽75之 ^的树反似率，更增加發光二鋪發光 =^___職卿_二極_。=發= 光於的娜封裝綠，在縣槽75的部份或全部填充渗混有螢 光奋的矽膠或銥氧樹脂做成白光發光裝置 其側Γ===^82與至少—嫩84'正電極82與靠近 一體曰曰片60之正極經由打線接通，負電極84與靠近 極光二極體晶片6G之負極經由打線接通。正電極82或負電 力可力^ 3銅或鐵材’而為了增加正電極82或負電極84之打線接著 腳Γ或負電極84之外層電鑛錄及銀。至少-隻正極導電接 广支負極導電接腳841分別是與正電極82與負電極84 一體 二設置’做為本發明發光二極體發光裝置在使用時 型-;W接用的接腳。正電極82及負 84與基板30以射出包覆成 裝署lir 電極82、負電極84、金屬導線找50與基板洲以定位 化t 制，崎岭覆成魏正電極82、負電極84、金屬導線 >、敢入於上絕緣層70與下絕緣層4〇之間。 ‘上所述’本發明之串制結構之發光二極體發光裝置包含一基板， 方設置下絕緣層；複數金屬導線支架設置於下絕緣層上方；發光二 =片没於基板並位於相鄰之金屬導線支架之間，發光二極體晶片電性 二日線打線使其正負極分別相接於相鄰之金屬導線支架。如此讓發光二 ,曰片之正負極連接用的打線區陳列在各晶片中間，以避免打線弧過長 景/響發光-極體晶片的裝配良率’更可於發光二極體晶片毁損或是故障 時不影響其他正常發光二極體晶片之使用。 200924218 故本發鶴實為—具转難、進錄及可供產業彻者，應符 國專利法所規定之專利申請要件無疑，妥依法提出發明專 柄 局早日賜准專利，至感為禱。 ^祈狗 惟以上所财，僅為本發明之—較佳實施烟已， 明實施之朗，舉驗本發”_m_狀雜、構造 神所為之均等變化與修飾’均應包祕本發明之㈣專利範圍内。' 【圖式簡單說明】 第一A圖為習知技術之發光二極體之燈座之上視圖； 第一 B圖為第一A圖之A-A方向剖試圖； 第二A圖本發明較佳實施例之封襞裝置之上視圖；200924218 IX. Description of the Invention: [Technical Field] The present invention relates to a package device for light-emitting diode light-emitting and a light-emitting device thereof, and more particularly to a light-emitting diode package capable of increasing the use efficiency of a series-parallel structure 'Device ^ its light device. ', one [Prior Art] Please refer to the figure -A and -B, which is a top view of the lamp holder of the multi-chip light-emitting diode of the prior art and a cross-sectional view of the AA direction of the A-A, The base of the known light-emitting diode comprises a substrate ίο, the substrate ίο is a metal or ceramic, the substrate 10 is provided with an insulating layer 12, and the insulating layer 12 is provided with a branch or a plurality of brackets 14 on both sides. If the LED arrays 16 are arranged in a matrix, the plurality of LED wafers 16 are arranged on the substrate 1 (), and the LED wafers 16 are connected in series by wire bonding. The string of LEDs 16 is connected in parallel to the support 14, such that when the LEDs 16 are damaged, the entire array of LEDs 16 will not illuminate. In addition, when the lamp holders of the conventional LED chip 16 are designed in series and in parallel, it is necessary to wire the wafer to the wafer by means of wire bonding, which is liable to cause damage or red road of the LED chip 16. The LED array 16 can only wire the brackets 14 on both sides to make the circuit conductive, and since the length of the wafer is not excessively large in consideration of the wire length, the arrangement of the wafers is limited. ^和*晶>{When there is a fault, when the light-emitting diode chip 16 needs to be replaced, the chip is designed to be wire-bonded to the crystal, and the old wafer and the new chip must be electrically connected by means of wire bonding. It is easy to cause damage or short circuit of the old wafer, and it also increases the inconvenience of repairing the conventional lamp holder. Therefore, the present invention provides a light-emitting diode package device of a series-parallel structure and a light-emitting diode thereof which does not cause a damaged light-emitting diode wafer to affect other normal light-emitting diode chips and facilitate replacement of damaged light-emitting diodes. The body wafer can solve the above problems. The invention aims to provide a light-emitting diode package device and a light-emitting device of a series-parallel structure, which can be arranged by an adjacent metal wire holder - a light-emitting diode allows hair The wire-bonding area for the connection of the positive and negative electrodes of the photo-polar plate is displayed in the middle of each wafer, not only more; the light-emitting 彳 阳阳>{threading, and avoiding the line degree of solitude is too gentle and the gold wire is too long to affect the light-polar u The assembly yield can not affect the normal use of other LED chips in the case of light-emitting diode damage or failure. The purpose of this month is to provide a light-emitting diode package device and a light-emitting device thereof in a series-parallel structure, which is provided with an upper insulating layer-collecting groove, and the light-emitting diode chip is located in the set. In the light groove, 'to increase the light source use efficiency of the light-emitting diode. Another object of the present invention is to provide a light-emitting diode illuminating device with a series-parallel structure, which is provided with a plurality of metal-supporting wire holders on the upper insulating layer, so that the light-emitting diode chips can be positively and negatively mixed through a conventional wire bonding method. It is connected to the metal wire holder, so that the light-emitting diode chip is more elastic in configuration. The invention relates to a light-emitting diode device and a hairline device thereof, and the package device comprises a substrate, a lower insulating layer, a plurality of isolated metal wire supports, at least one positive and negative electrode and an outward extending portion thereof a conductive pin, an upper insulating layer and a plurality of light-emitting diode solid crystal regions; a lower insulating layer disposed above the substrate; a plurality of gold wire branches (four)·τ_ layers above, each metal wire support is spaced apart from each other; Above the insulating layer under the layer, between the insulating layer and the lower insulating layer of the metal wire support 2, the upper scale layer is provided with a light collecting groove; the solid crystal region of the light emitting diode is disposed between the adjacent metal wire branches of the substrate The two poles are turned into the light collecting trough. The light-emitting device is provided with a light-emitting diode chip in a solid crystal region of the packaging device, and the light-emitting diode chip is secreted to an adjacent metal wire support. In this way, the wiring area of the LED chip is displayed in each crystal > {the towel is not too smooth, and the assembly yield of the LED chip is better than that of the gold wire. Therefore, it does not affect the normal use of other LED chips. 200924218 [Embodiment] In order to make the reviewer's structural features and the achieved effects of the present invention more inferior = set _ _ _ heart (four) (four) installed = basic: one:, 曰〇, a plurality of metal wire bracket 50 , a plurality of hair solidification zones 55 and an upper insulation layer 7G, a lower insulation layer is disposed above the substrate 3G, a lower Zhongcai oil secret rail hole, a Gufa ^ paving solid crystal region 55; a plurality of gold wire brackets 50 The upper portion of the metal wire holder 5 is covered by the lower insulating layer 40. The metal wire holder 5 is spaced apart from each other, and the upper insulating layer 7 is disposed on the lower insulating layer 40. Above, the metal wire holder 5〇 is located between the upper insulating layer 7〇 and the lower insulating layer 4〇, the insulating layer 70 is provided with a light collecting groove 75, and the light emitting diode solid crystal region 55 is disposed at the lower insulating layer 4〇 The holes are isolated and located between adjacent metal wire branches (4), and the light-emitting diode solid crystal region 55 is located in the first groove 75. The lower insulating layer 40 and the upper insulating layer 7 are integrally formed by injection molding. During fabrication, the metal wire holder 50 is sandwiched by a positioning device, and the lower insulating layer 40 and the upper insulating layer 70 are formed by injection molding. The lower insulating layer 4A and the upper insulating layer 7'' are formed with an insulating seat and the metal wire holder 50 is embedded between the lower insulating layer 4'' and the upper insulating layer 7''. The light-emitting device of the present invention is provided as shown in FIG. 2B. The light-emitting diode solid aaa region 55 of the present invention is provided with a light-emitting diode wafer 60, that is, a plurality of light-emitting diode wafers. And located between the adjacent gold wire holder 5 ,, and the light-emitting diode chip 6 〇 using the conventional gold wire connection or the hybrid phase of the metal wire support 5 (). The positive or negative electrodes of the light-emitting diode wafer 60 between the adjacent metal wire holders 5'' are electrically connected to each other by the adjacent metal wire holders 50. Thus, when one or more of the LED chips are destroyed or faulty, the metal wire holder 5 is used to conduct current to other light-emitting diode chips 60 that are not damaged or malfunctioned, so that Affecting the normal use of other LED chips 6', the other side is provided with a plurality of lock mating holes, and the lock mating holes 86 extend through the upper insulating layer 7 and the lower layer 200924218. When the heat dissipation module is locked at the rear end of the substrate 30, the locking hole 86 can be closely attached to the rear heat dissipation module. The substrate 30 is read by a high heat dissipation metal material or a ceramic material, such as a Ming or copper or Niobium (A1N) or a dream, and a light emitting diode chip 6 is disposed on the substrate, with the substrate 3 () and the light emitting two The contact of the polar body wafer 60 is quickly derived by the thermal energy generated by energizing the light-emitting diode wafer 6 turns. The distance between the sides of the adjacent LED chips 6G and the sides is greater than the length of the two-dimensional or two-thickness of the LEDs 6(). The gap between the adjacent light-emitting diode chips 6 () is more than G. 5 times larger than the size of the light-emitting body wafer 60, so that the heat source expansion under the light-emitting diode chip 6 can be effectively controlled. The phase-to-wafer distance between the wafer and the wafer is too small to cause a thermal accumulation phenomenon, resulting in an excessive temperature of the light-emitting diode wafer 60. The lower insulating layer 4 is disposed above the substrate 3, and the lower insulating layer 4G can prevent the metal wire holder 5G from being short-circuited by contacting the substrate 3 (). Thus, the present invention has a high degree of divergence, and achieves an occupational power score. The best choice for the material of Jinlin Line (4) is copper, or it can be iron or saki. The outer layer of metal wire (4) can be used to record silver in order to increase the adhesion of gold wire. The light-emitting diode chip 6〇 of the present invention is located between two adjacent metal wire holders 5(), so that the wire bonding region connecting the light-emitting diode chips 6G is displayed in the middle of each wafer, and the wafers are easily connected in parallel at a rate. The circuit 'so does not need the county to check the _ length money age set at the two ends of each chip, so it can avoid (four) the arc of the secret recording of the silk (9) of the shouting rate in time. The present invention affects the normal use of other light-emitting diodes due to the failure of the light-emitting diode chip (9) due to the failure of the metal-emitting diode (5). The light-emitting diode chip of the present invention 6 〇 ^: invalid money _ secret secret complex, and will not light other light two shop ^ 6g again hit ^ and find. Replace the light-emitting two shop of Jane's turn ^ (9) when 6 (1 and its suspicion of Naca M miscellaneous, heavy = 曰 normal hitting red willow can be moved without other illuminating diodes, two diodes, two cymbals, 6 〇 other wafer damage The situation arises, and the replacement efficiency of the first diode chip is further increased. Moreover, the light-emitting diode chip 60 of the present invention has a solid crystal = bit = illuminate, and is arranged in various ways. Two cups or other geometric figures. Each light flux by the light collecting groove 75, the upper insulating layer 7 ° = the inner surface is electrically or silver, to increase the tree inverse ratio of the light collecting groove 75, More increase the illuminating two shop illuminate = ^ ___ job _ _ _ _ = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = The white light emitting device has a side Γ===^82 and at least the n-84' positive electrode 82 and the positive electrode close to the integrated cymbal 60 are connected via a wire, and the negative electrode 84 and the negative electrode adjacent to the auroral diode 6G are connected via a wire. Turn on. Positive electrode 82 or negative power can force ^ 3 copper or iron ' and in order to increase the positive electrode 82 or negative electrode 84, then the pedal or negative 84 outer layer of electric mine record and silver. At least - only positive electrode conductive connection wide-band negative electrode conductive pin 841 is integrated with the positive electrode 82 and the negative electrode 84 respectively, as the light-emitting diode light-emitting device of the present invention is in use -;W used pin. The positive electrode 82 and the negative 84 and the substrate 30 are ejected and coated into the assembly lir electrode 82, the negative electrode 84, the metal wire to find 50 and the substrate continent to locate the t system, the ridge is covered The Weizheng electrode 82, the negative electrode 84, the metal wire>, dares to enter between the upper insulating layer 70 and the lower insulating layer 4A. The above-mentioned light-emitting diode light-emitting device of the string structure of the present invention comprises a The substrate is provided with a lower insulating layer; the plurality of metal wire holders are disposed above the lower insulating layer; the light-emitting diodes are not on the substrate and are located between the adjacent metal wire holders, and the light-emitting diode chip is electrically connected to the second day line. The positive and negative electrodes are respectively connected to the adjacent metal wire holders. Thus, the wire-bonding areas for connecting the positive and negative electrodes of the light-emitting diodes and the negative electrodes are arranged in the middle of each wafer to avoid the assembly of the arc-arc long-range/sound-emitting-polar body wafer. Yield 'more can be destroyed by the LED chip Or the failure does not affect the use of other normal light-emitting diode chips. 200924218 Therefore, the cranes are really difficult to transfer, enter and record for the industry, and the patent application requirements of the National Patent Law are undoubtedly Appropriately, the invention of the invention will be granted as soon as possible. The praying of the dog is only for the present invention - the preferred implementation of the smoke has been implemented, and the test is carried out"_m_ The equivalent changes and modifications made by the miscellaneous and structural gods should be included in the scope of the patents of the invention (4). [Simplified description of the drawings] The first A is a top view of the lamp socket of the light-emitting diode of the prior art; The first B is a cross-sectional view of the AA of the first A; the second A is a top view of the sealing device of the preferred embodiment of the present invention;
第二B ®本發雜佳實補之發絲置已喊上發光二姆晶片之上視 圖；以及 M 第一 C圖為第二B圖之B-B方向之剖視圖。 【主要元件符號說明】 10 基板 12 絕緣層 14 支架 16 發光二極體晶片 20 基板 22 電路層 221 正極 222 負極 24 反射蓋 242 開口 26 發光二極體晶片 10 200924218 223 連接電極 30 基板 40 下絕緣層 50 金屬導線支架 55 發光二極體固晶區 60 發光二極體晶片 70 上絕緣層 75 集光槽 82 正電極 821 正極導電接腳 84 負電極 841 負極導電接腳 86 鎖配孔 90 輔助金屬導線支架The second B ® hairpin has been screamed on the top view of the illuminating gamma wafer; and the first C picture is a cross-sectional view of the second B ray in the B-B direction. [Main component symbol description] 10 substrate 12 insulating layer 14 bracket 16 light emitting diode wafer 20 substrate 22 circuit layer 221 positive electrode 222 negative electrode 24 reflective cover 242 opening 26 light emitting diode wafer 10 200924218 223 connecting electrode 30 substrate 40 lower insulating layer 50 metal wire holder 55 light-emitting diode solid crystal region 60 light-emitting diode wafer 70 upper insulating layer 75 light collecting groove 82 positive electrode 821 positive conductive pin 84 negative electrode 841 negative conductive pin 86 lock matching hole 90 auxiliary metal wire support