TW200919055A - Liquid crystal display device and electronic apparatus - Google Patents
Liquid crystal display device and electronic apparatus Download PDFInfo
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- TW200919055A TW200919055A TW097134489A TW97134489A TW200919055A TW 200919055 A TW200919055 A TW 200919055A TW 097134489 A TW097134489 A TW 097134489A TW 97134489 A TW97134489 A TW 97134489A TW 200919055 A TW200919055 A TW 200919055A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Optics & Photonics (AREA)
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- Engineering & Computer Science (AREA)
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Abstract
Description
200919055 六、發明說明: 【發明所屬之技術領域】 本發明係有關液晶顯示裝置及電子機器,其串擾少、 .顯示品質良好、且視角廣。 【先前技術】 液晶顯示裝置係具有:於表面形成電極等的一對透明 基板、以及被挾持於該一對基板間的液晶層,其多使用藉 由於兩基板上之電極施加電壓使液晶重新排列而顯示種種 資訊的縱向電場方式。如上所述之縱向電場方式之液晶顯 示裝置一般為TN(Twisted Nematic,扭曲向列)模式者, 但由於存有視角窄的問題,故開發了 VA(Vertical200919055 VI. Description of the Invention: [Technical Field] The present invention relates to a liquid crystal display device and an electronic device, which have less crosstalk, good display quality, and wide viewing angle. [Prior Art] A liquid crystal display device includes a pair of transparent substrates on which electrodes are formed on the surface, and a liquid crystal layer sandwiched between the pair of substrates, which are often used to rearrange liquid crystals by applying voltages to electrodes on the two substrates. A vertical electric field method that displays various kinds of information. The liquid crystal display device of the vertical electric field type as described above is generally a TN (Twisted Nematic) mode, but due to the problem of narrow viewing angle, VA (Vertical) has been developed.
Alignment ’ 垂直配向)模式、MVA(Multidomain VerticalAlignment ’ vertical alignment mode, MVA (Multidomain Vertical)
Alignment ’多象限垂直配向)模式等種種改良後的縱向電 場方式液晶顯示裝置。 另一方向’與前述縱向電場方式液晶顯示裝置不同 的,也有僅於一方基板具有由像素電極及共通電極構成的 對電極之IPS(In-Plane Switching,横向電場效應)模 式和FFS(Fringe Field Switching,邊緣電場效應)模式 的液晶顯示裝置。 之中,IPS模式之液晶顯示裝置,係將—對電極配置 於同一層,而將施加於液晶的電場方向作為幾乎平行於基 板的方向而使液晶分子於平行於基板的方向重新排列。因 =匕’該IPS模式之液晶顯示裝置又被稱為橫向電場方式液 曰曰顯不裝置’與前述縱向電場方式之液晶顯示裝置相比具 4 320557 200919055 有非常廣視角的優點。然而,由 置係將一對電極設於同sb衩式之液晶顯示歲 -分子無法縣分_上側的液晶 為了解決如上^ 導致透過率等降低的問題點。 點,開發了亦被稱為iPS模式液晶顯示裝置的問題 做辑為所謂斜電場方式的FFS握4、V 裝置(參照下逑專利文齡 、式液晶顯示 裝置係將用以於液曰爲吵 挺式之液晶顯示 別隔介絕緣膜而酉己置 的像素電極與共通 該FFS %式之访曰Various modified vertical electric field type liquid crystal display devices such as Alignment 'multi-quadrant vertical alignment mode'. In the other direction, unlike the above-described vertical electric field type liquid crystal display device, there is also an IPS (In-Plane Switching) mode and FFS (Fringe Field Switching) in which only one of the substrates has a counter electrode composed of a pixel electrode and a common electrode. , edge electric field effect) mode liquid crystal display device. Among them, in the IPS mode liquid crystal display device, the counter electrode is disposed in the same layer, and the direction of the electric field applied to the liquid crystal is rearranged in a direction parallel to the substrate in a direction substantially parallel to the substrate. Since the IPS mode liquid crystal display device is also referred to as a lateral electric field mode liquid crystal display device, it has a very wide viewing angle compared with the above-described vertical electric field mode liquid crystal display device. However, by setting a pair of electrodes in the same sb-type liquid crystal display, the liquid crystal of the numerator cannot be divided into _ upper side, in order to solve the problem that the transmittance is lowered as described above. Point, developed a problem known as the iPS mode liquid crystal display device. The so-called oblique electric field type FFS grip 4, V device (refer to the next patented age, liquid crystal display device system will be used for liquid helium The liquid crystal display of the positive type is separated by the insulating film and the pixel electrode of the set is shared with the FFS %.
之液日日顯示裝置,為比I 示裝置更廣視角且高對比者,且同時具有可晶顯 並且高透過知可進㈣亮__。再驅動The liquid day display device has a wider viewing angle and a higher contrast than the I display device, and has both crystallizable and high transmittance (4) bright __. Redrive
模式之液晶顯示聿詈卜如 由於FFSThe liquid crystal display of the mode is due to the FFS
Ek 丟*德冬•、起IPS模式液晶顯示裝置在平面視 ==電極與共通電極間之重複面積較大= 加地產生#父大的保持電 日附 電容線的優點。而要另外設置輔助 另一方面,於FFS模式之液晶顯示裝置中,由於在 r方極之表面形成有高低差,因此採用於上述 方式和A方式之液晶顯示裝置中所使用的平坦化膜, 即可於該平坦化膜上配置像素電極和共通電-述 專利文獻3)。 1…卜义 [專利文獻1]日本國特開2001_235763號公報 [專利文獻2]日本國特開2002-182230號公報 [專利文獻3]日本國特開2〇〇7_226199號公報 【發明内容】 320557 5 200919055 (發明所欲解決的課題) 依縣料敎獻3,於平坦铺均成像素電極和 .共通電極時,可將絕緣膜上側之電極(以下稱為「上電極」) 及下侧電極(以下稱為「下電極」)之任—者作為 及共通電極使用。而,在將下電極作為像素電極使用時, 可使下電極延伸至為交換元件白々薄膜電晶體㈣,丁恤 Film Transistor)B近及訊號線及掃描線之附近,因此有 開口部變大而可獲得顯示明亮之液晶顯示面板的優點。 而,上電極於像素區域雖有形成複數個隙缝的需要,但由 於可將上電極形成片狀,故可使作為共通電极的上電極的 電阻變小,而獲得共通電極之電位安定化且顯示品質良好 的FFS模式液晶顯示裝置。Ek lost * Dedong • IPS mode liquid crystal display device in the plane view == the overlap area between the electrode and the common electrode is larger = the grounding is generated #父大的保持电 日附 The advantage of the capacitor line. On the other hand, in the liquid crystal display device of the FFS mode, since the height difference is formed on the surface of the r-square, the planarization film used in the liquid crystal display device of the above-described aspect and A mode is used. The pixel electrode and the co-energization can be disposed on the planarization film - Patent Document 3). [Patent Document 1] Japanese Laid-Open Patent Publication No. 2001-225230 [Patent Document 2] Japanese Laid-Open Patent Publication No. 2002-182230 (Patent Document 3) Japanese Patent Application Laid-Open No. Hei. 5 200919055 (Problems to be Solved by the Invention) In the case of a flat electrode and a common electrode, the upper electrode of the insulating film (hereinafter referred to as "upper electrode") and the lower electrode can be used. (hereinafter referred to as "lower electrode") is used as a common electrode. However, when the lower electrode is used as the pixel electrode, the lower electrode can be extended to the vicinity of the signal line and the scanning line of the switching element, the thin film transistor (4), and thus the opening portion becomes large. The advantage of displaying a bright liquid crystal display panel is obtained. Further, although the upper electrode needs to form a plurality of slits in the pixel region, since the upper electrode can be formed into a sheet shape, the electric resistance of the upper electrode as the common electrode can be made small, and the potential of the common electrode can be stabilized. A good quality FFS mode liquid crystal display device is displayed.
另一方面,將上電極使用為共通電極時,為了於上電 =形成缝隙而存有高低差,同時也發現起因讀高低差的殘 衫(Image Sticking)現象。就抑制該殘影現象而古,縮 ^電極之高低差是很有效果的。料,可考^ _ 厚度削薄至下電極厚度之一半左右(具體而言,50niJ 由於上電極係以IT◦、⑽等導電性材料所形 成,故若削薄上電極之厚度將導致上電極之電阻值變高。 且由於上電極係於每個像素區域形成有複數姻 電極之電阻值係比將上電極形成片狀時更高。若^電極的 2阻值上升,騎施加的簡會電性劣化,而產生起因於 串、二適當地層給予預定之驅動電位的串擾。這種 串擾(crosstaIk)的產生尤其在被稱為寬尺寸的樺長液晶 320557 6 200919055 顯示裝置中更會顯者的顯現。 -(解決課題的夺段) - 本發明係為2解2上述課題之至少一部分而研發者, 可作為以下的变悲或貫施力而實現。 (適用例n本適用例之液晶顯示裝置,具備挾持了液 晶層的一對透明基板,於前述一對透明基板之中—方的= 明基板的前述液晶層側具有:複數條掃描線及複數條^ 線,配置於顯示區域成矩陣狀;第i電極,形成於^ 掃描線及前达訊就線所區晝出的每―個像素區域;胃 極,於前述第^極上隔著絕緣膜而形成,且至 敕 個前述顯示區域㈣成;及共通姐, 卜 區域更外侧;前述第2電極 ± ^成於比月'J述顯示 至少-邊部分形成的低電且^由沿著前述顯示區域之 接。.低電阻線路而與前述共通線路電性連 依據該構成’第2電極 之每行或每複數行即經由與如’上電極)係於像素區域 低電阻化線路而鱼並弟2電極之電阻相比十分小的 逋線路電性 極之電阻在外觀上會變小,1王迷接。因此,由於第2電 的第2電極電位安定 因此可獲得經由共通 線路施加 又,可使用I·:液晶顯示裝置。 第2電極。此時,笛 寻>電性材料作為第1 電極及 弟1電極蛊筮q 不同組成。另外,就將該,/、弟2電極可為同組成亦可為 使用P-Si(多晶石夕)型^等電極連接的交換元件而言,可On the other hand, when the upper electrode is used as a common electrode, there is a difference in height in order to form a gap, and an image sticking phenomenon in which a height difference is read is also found. In order to suppress the phenomenon of the afterimage, the height difference of the electrode is very effective. Material, can be tested ^ _ thickness is reduced to about one-half of the thickness of the lower electrode (specifically, 50niJ is formed by conductive materials such as IT◦, (10), so if the thickness of the upper electrode is thinned, the upper electrode will be caused. The resistance value becomes higher. Since the resistance value of the upper electrode formed in each pixel region is higher than that in the case where the upper electrode is formed into a sheet shape, if the resistance value of the electrode is increased, the ride is applied briefly. Electrically degraded, resulting in crosstalk caused by a string or a suitable layer giving a predetermined driving potential. This crosstalk (crosstaIk) is especially noticeable in a display device called a wide-sized birch long liquid crystal 320557 6 200919055 display device. The present invention is developed by at least a part of the above-mentioned problems, and can be realized as the following sorrow or force. (Applicable Example n Liquid crystal of this application example) The display device includes a pair of transparent substrates holding the liquid crystal layer, and the liquid crystal layer side of the pair of transparent substrates has a plurality of scanning lines and a plurality of lines arranged on the liquid crystal layer side, and is disposed in the display area Forming a matrix; the i-th electrode is formed in each pixel region of the scan line and the front-end signal line; the stomach pole is formed on the first electrode via an insulating film, and the foregoing The display area (4) is formed; and the common sister, the outer area of the area is further; the second electrode is formed by the low-voltage formed by at least the side portion and is connected along the display area. The circuit is electrically connected to the common line according to the resistance of the fish and the two electrodes of the second electrode in each row or every plurality of rows, that is, via the low-resistance line of the pixel region, such as the 'upper electrode. The electric resistance of the small electric line of the electric circuit is small in appearance, and the first electrode is connected. Therefore, since the second electrode potential of the second electric power is stabilized, it can be applied via the common line, and I: liquid crystal display device can be used. The second electrode. At this time, the retort> electrical material has different compositions as the first electrode and the first electrode 蛊筮q. In addition, the /, the second electrode may be the same composition or may be P- For a switching element in which an Si (polycrystalline stone) type ^ electrode is connected,
Transistor)元件、a 薄膜電晶體(TFT : Thin Film 非晶矽)型TFT元件、低溫多晶矽 320557 7 200919055 (LTPS· L〇W Teperature Poly Silicon)型 TFT 元件等三端 子型兀件,或薄膜二極體(TFD : Thim Film Diode)等代表 性的二端子型非線性元件等。 。(適用例2)於前述適用例之液晶顯示裝置中,前述低 電阻化線路係於職看來為形成於前賴示區域與前述共 通線路之間較好。 據此構成,即使不將第2電極的面積形成為必要以 ^見$ (例如’廣至共通線路之外側)也可使第2電極與低 間日?,^連接。另外’當顯示區域與共通線路之間有空 J為:該空間之-部分形成低電阻化線路。因此, / 又有為了形成低電阻化線路 要,而可有效利用划。 顯不區域之面積的需 如上所述,低電阻化線路〇兩、几4 一 邊部分形成即可。亦即,液“者如區域之至少一 有共通線路的邊中於顯示區;和:農置係於顯示區域中存 化線路,且於不料共:^祕之間設置低電阻 低電阻化線路,由於係使第2電u '顯不區域的外側設置 路,故作為共通電極運作的第::電性連接於低電阻化線 而可獲得顯示畫質良好的液晶顯^之電位會變得安定, (適用例3)於前述適用例之:置。 電阻化線路係於俯視上看來為^顯示裝置中,前述低 更外侧的第2電極重疊而形成較蚌伸出至比前述顯示區域 依據此構成,與將於比第2· 電阻化線路時相比作更外侧的區域設置低 夜曰,示裝置的大小。 320557 8 200919055 (適用例4 )於 電阻化線路係使前 路電性連接較好。 前述適用例之液晶顯示裝置中,前述低 述低電阻化線路之兩端部與前述共通線 線路電性_ / 起電崎線路之—側與共通 在外觀上^ 端部連接的方式可使第2電極之電阻 在外嬈上變得更小,故可達到良好的效果。 通線==適用例之液晶顯示裝置中,前述共 阻化線路與二的位置平行配置;前述低電 好。 /、k線路係經由逹接線路而電性連接較 的)低電二弟二^ 路之間(㈣成於共麟路與低電阻化線 狀態。從而,由於可路而成為與共通線路連接的 而使達到的效果更好:電極外觀上的電阻變得更小, :像素區域之每行,亦可於形f在顯示區域 成在顯示區域的像素 A數仃开/成’但以採用於形 (適用例6)於俞·;+、、吞m 電阻化線路及前述連接二路:之”中’前述低 緣相同的材料形成較好。Ά與則述掃描線或前述訊號 依據該構成,可於 電阻化線路及連接線路^ :描線及訊號線的同時形成低 低電阻化線路及連接線路而可不變更製造工程的輕易形成 320557 9 200919055 …(適關7)於前述適用例之液晶顯示裝 不區域為大致長方形,前述低電阻化線路产#乂,前述顯 域之長邊方向而形成較好。 署別述顯示區 /依據此構成,低電阻化線路係沿著顯示 向形成,由於係經由該低電阻化線路而使共渴s之長邊方 電極電性連接,故與於顯示區域之短邊方向線路與第2 線路的情形相比,可抑制於第2電極之—邊的戍低電阻化 從平面上看來增大。亦即,於長邊方向設置低=端部電阻 而與共通線路連接的方式可使第2電極 2卩且化線路 並且,低電阻化線路雖亦可於為長邊方 足小。 側的行—上下之至少一方形成二區域之外 的方式就使第2電極之電阻比外觀上更小成於兩側 的效果。5可達到更好 所記㈡Si㈣—具有於前述任-項 、依據該構成,可獲得使用了串擾少、顯示品質、 且視角廣的液晶顯示裝置的電子機器。 ' 【實施方式】 ,At以下,參照圖示而藉由實施例說明本發明的最佳實施 形怨,。但是,於以下所示的實施例係例示用以具體化本發 明技術思想的液晶顯示裝置者。而不意味將本發明特定^ 此液晶顯示裝置。從而,可均等適用於包含在專利申請範 I的其他實轉態。另外,於本說明書中用於說明的各圖 、 為了使各層和各構件為在圖式中可辨識程度之大 320557 10 200919055 ^、’故各層孝口各構件係分別以不同縮小比例顯示。亦即, 並非以實際尺寸之比例而進行顯示者。 第1圖為實施例之液晶顯示裝置陣列基板的2像素产 之示意平面圖。第2圖為實施例之液晶顯示裝置的陣列^ 板的概略平面圖。第3圖為沿著第i圖之ΙΠ_ΠΙ線的Γ 意剖面圖。第4圖為沿著第i圖之㈣線的示意剖面圖: 另外,第5_第2圖之v部分的擴大平面圖。第㈣為 第5圖之X部分的擴大平面圖。第7圖為第2圖之w部八 的擴大平面圖。第8圖為第5圖之沿著νη_νπ線的= 剖面圖。帛9圖為對應於實施例之變形例的第8圖的示立 剖面圖。第10圖⑷為顯示搭載有液晶顯示面板的個人$ 腦的圖’第1G圖⑻為顯示有搭载了液晶顯示面板的行動 (弟1實施例) 該實施例之FFS模式的液晶顯示裝幻〇,係於一對對 向基板間挾持有液晶層(未圖示)而構成者。而一對基板之 中,使一方的基板作為陣列基板AR(參照第3圖),另一方 的基板作為形成有彩色滤光器㈤。r⑴㈣等的彩色減 光器基板(未圖示)。 " 〜陣列基板AR首先係橫跨玻璃基板等透明基板n(參照 ,3圖)之表面全體而形成鋁或鋁合金等導電性層。之後…,、 猎由習知的光微影(ph〇tc) 11 th卿aphy)法及_法而於 顯不區域DA以彼此平行的方式形成複數條掃描線12。另 外’於顯示區域DA的周圍(以下,稱為「額緣區域」)形成 320557 11 200919055 共通線路16ι及閘極線路(未圖示)。該閘極線路係比共通線 路16ι 5支置於更接近顯示區域μ側。再且,如於第2圖所 示的圖案,第1低電阻化線路lb、第2低電阻化線路lb、 及第3低電阻化線路ΐβ4。 該顯示區域DA係依據從液晶顯示裝置1〇的外部輸入 的影像用之訊號而控制液晶層之液晶分子的區域。而,顯 示區域DA係與矩形狀透明的基板u之形狀相同的為橫長 的顯不區域DA。 具體而言,共通線路16l係除了於配置有驅動IC和各 種端子的額緣區域之一部分TA以外,以將顯示區域DA包 圍的方式形成的比其他線路更粗。亦即,該共通線路l6i 例如係如第2圖所示沿著矩形狀透明基板u的兩個短邊和 一個長邊而形成於比顯示區域以更外側。且於未形成有共 通線路1的透明基板丨丨之一個長邊配置有驅動1(:和各種 端子。 且,第1至第3低電阻化線路162、163、164之中,第 1及第2低電阻化線路162及163係分別形成「列(r〇w,橫 向)方向的低電阻化線路」,於顯示區域DA之外側的行 (column ’縱向)方向上下沿著列方向而形成。 亦即,第1低電阻化線路162係沿著透明基板u之長 邊形成且與共通線路161平行地形成。另外,係在比顯示 區域DA更外侧的區域沿著顯示區域μ之長邊方向形成。 又,第1的低電阻化線路162係設於顯示區域DA外側的區 域,且儘可能接近顯示區域Μ較好。從而,較好為與顯示 320557 12 200919055 區域DA中位置於最外側的作為 域da之長邊方向而形成。又,行方向係=161的顯示區 灯的方向’列方向係指與掃描線12平行二、訊號綠15平 如此,該第;及第2低電阻化線路c。 了:之兩端部-體連接於共通線路16l。亦〆63係皆於列 山之長邊方向延伸的第1及第2低電阻化沿著1 貢示區 ==係分別連接於形成在透明基板U ^路162及163 二=161。藉此’比起僅於單侧和ϋ通緩兩個起邊的 ί::?,式可使作為第2電=i6r連 匕外觀上更小,而可發揮良好效果。上私22之 再且,如第2圖所示,形成於 =上側)的第1低電阻化線:二以外侧-上側 Q域之行方_第3低電阻 2係糈由形成於像素 線路16”該第3低電阻化線6 4而電性連接於共通 阻化線路」者。另外:=一成「行方向之低電 DA之外側,由於行方^ 化線路164係於顯示區域 成於行方向μ财形成料魏 線路而U低電1a化線路162與平行於該第丨切 心係藉形成於透明基板11之^二 1低電阻化線=:的連接線路而電性連接。且 62例如垂直延伸的連接線路係成為行= 320557 13 200919055 之低電,化線路的第3低電阻化線路! 64。 3低電阻化線路164雖亦可於形成在顯示區域⑴ Ί域之每行形成或每複數行而形成,但已於形成在 的像素區域之每行形成的方式由於使後述的 '·、、 电極之上電極22之外觀電阻變小而較好。 線路5 ^1 線路162與共通 ,路^ _空間係設有靜電保護電路3G。具體而言,靜 1護電路3〇係—方與訊號線15之端部連接,另一方與 t線蜂161連接。另外,靜電保護電路系設於像素區 ==此,第3低電阻化線路164係於形成 的邊電保護電路3〇之旁(以避開靜電保 的方式)分別設置。 明。對於靜電保護電路3G之構成和機能簡單地說 門且^ ^護電路3〇係於訊號線15之端部與共通線路161 ::兩個TFT(TFn、TFT2)。如第6圖⑷所示,於各製 當共通線路16l側成為高電料使電荷從訊號線Μ側 :放’相反的當訊號線15側成為高電料,如第6圖⑻ 1:1何係從共通線路161側釋放。亦即,藉由該靜電保 堂電路30,可防止於液晶顯示裝置1〇之製程中產 電所致的㈣於顯輕的錢元件之破料。 端如上所述’訊號線15之端部和未圖示的掃插線12之 ^ -般係方連接於用以輸人訊號的驅動π 則,由靜電保護電路3G而連接於共通線路瓜。從而,顯 不时域DA與共通線路16】之間因為存在有靜電保護電路加 320557 14 200919055 必須要有一定的距離。從而,於隔著該 存在的共通線路16i與第 =(。第3低電阻化線路164)的方式較可減小上電:22 : 通二,為了形成後述的與上電極22間的連接部,從* ==6,成有朝内側(顯示區域Μ側)突出的連接; 地形成有寬度較廣的連接部 第2低雷Γ圖)。在此’於該等第1低電阻化線路瓜及 =2低電阻化線路163所形成的連接部他及167_ 在-不區域DA的像素區域之每行形成。 ’、〜成 成二Γ,於該表面全體被覆由氮化碎層或氧化㈣所構 下^表^全體覆蓋例如非晶石夕(Am〇rph〇us siii_,以 TFT二:^ ’同樣地藉由光微影法及钱刻法而於 $成區_成由a_SU_的半導 右 =趙層14的位置之掃描線12的區域形成τη = 電極G(麥照第3圖)。 J可 有半=層::二合板 曰叹明基板Η之表面全體。再且, 由光微影法及侧法而於顯示區域DA以垂直掃Transistor), a thin film transistor (TFT: Thin Film) TFT device, a low-temperature polysilicon 320557 7 200919055 (LTPS·L〇W Teperature Poly Silicon) type TFT device, etc., or a thin film diode A representative two-terminal type nonlinear element such as a body (TFD: Thim Film Diode). . (Application Example 2) In the liquid crystal display device of the above-described application example, it is preferable that the low-resistance circuit is formed between the front display region and the common line. According to this configuration, even if the area of the second electrode is not formed as necessary (see, for example, "outside the common line"), the second electrode can be made to have a lower period. , ^ connected. In addition, when there is space between the display area and the common line, J is: a portion of the space forms a low resistance circuit. Therefore, / in order to form a low-resistance circuit, the scratch can be effectively utilized. The area of the area of the display area is as described above, and the low-resistance line is formed by two or four sides. That is, the liquid "if at least one of the regions has a common line in the display area; and: the agricultural system is in the display area in the storage line, and unexpectedly set a low resistance and low resistance circuit between the secrets Since the second electric circuit is provided on the outer side of the display area, the operation of the common electrode is: electrically connected to the low-resistance line, and the potential of the liquid crystal display having good display quality is obtained. Stability, (Applicable Example 3) is in the above-described application example: The resistive circuit is viewed in a plan view as the display device, and the second electrode on the outer side of the lower side is overlapped and formed to protrude beyond the display area. According to this configuration, a low-lying area is set in a region further than the second resistive line, and the size of the device is shown. 320557 8 200919055 (Application example 4) The front-end electric power is made in the resistive circuit system. In the liquid crystal display device of the above-described application example, the both end portions of the low-resistance-reducing line and the side of the common-line electric _ / the electric circuit are connected to the common end portion. The way the resistance of the second electrode can be In the liquid crystal display device of the application example, the common-resistance line is arranged in parallel with the position of the second line; the low power is good. /, k line is via 逹Between the line and the electrical connection, the low-power second brother and the second road ((4) are in the state of the common lining road and the low-resistance line. Therefore, the effect is achieved by connecting with the common line due to the road. Good: the resistance on the appearance of the electrode becomes smaller, : each row of the pixel area, or the number of pixels A in the display area in the display area can be opened/formed 'but used in the shape (applicable example 6) Yu Yu; +,, swallowing m resistance circuit and the above-mentioned two-way connection: the material of the same "lower edge" is better formed. The scanning line or the signal according to the structure can be used in the resistive line. And the connection line ^: The low-and-low-resistance line and the connection line are formed at the same time as the line and the signal line, and the manufacturing process can be easily formed. 320557 9 200919055 ... (suitable to 7) The liquid crystal display area of the above-mentioned application example is substantially rectangular , the aforementioned low resistance circuit production# The longitudinal direction of the explicit domain is preferably formed. According to the configuration, the low-resistance circuit is formed along the display direction, and the long side of the thirst is caused by the low-resistance line. Since the square electrode is electrically connected, it is possible to suppress the decrease in the resistance of the second electrode from the plane as compared with the case of the second line in the short-side direction of the display region. The second electrode 2 can be connected to the common line by providing a low-side resistance in the longitudinal direction and connected to the common line. The low-resistance line can also be small in the long side. The manner in which at least one of the two regions is formed outside the two regions is such that the electric resistance of the second electrode is smaller than that of the two sides. 5 can achieve better (2) Si (four) - having the above-mentioned any item, according to the configuration, An electronic device using a liquid crystal display device having less crosstalk, display quality, and a wide viewing angle. [Embodiment] At the following, the best practice of the present invention will be described by way of examples with reference to the drawings. However, the embodiments shown below exemplify a liquid crystal display device for embodying the technical idea of the present invention. It is not intended to specify the liquid crystal display device of the present invention. Therefore, it can be equally applied to other actual states included in the patent application specification. In addition, in the drawings for the description of the drawings, in order to make each layer and each member have a recognizable degree in the drawing, 320557 10 200919055 ^, respectively, the components of each layer of the vertices are displayed at different scales. That is, the display is not performed in proportion to the actual size. Fig. 1 is a schematic plan view showing a 2-pixel production of a liquid crystal display device array substrate of an embodiment. Fig. 2 is a schematic plan view showing an array of liquid crystal display devices of the embodiment. Figure 3 is a schematic cross-sectional view along the ΙΠ_ΠΙ line of the i-th image. Fig. 4 is a schematic sectional view taken along line (4) of Fig. i: In addition, an enlarged plan view of a portion v of the fifth to second figures. The fourth (4) is an enlarged plan view of the X part of Fig. 5. Fig. 7 is an enlarged plan view of the portion 8 of the second figure. Fig. 8 is a cross-sectional view taken along line νη_νπ of Fig. 5. Fig. 9 is a cross-sectional view showing the figure corresponding to Fig. 8 of a modification of the embodiment. Fig. 10 (4) is a diagram showing a personal $ brain in which a liquid crystal display panel is mounted. Fig. 1G (8) shows an operation in which a liquid crystal display panel is mounted. (Embodiment 1) The FFS mode liquid crystal display of this embodiment is an illusion. It is formed by holding a liquid crystal layer (not shown) between a pair of opposed substrates. Among the pair of substrates, one of the substrates is used as the array substrate AR (see Fig. 3), and the other substrate is formed with a color filter (5). A color dimmer substrate (not shown) such as r(1)(4). " The array substrate AR first forms a conductive layer such as aluminum or aluminum alloy across the entire surface of the transparent substrate n (see Fig. 3) such as a glass substrate. Thereafter, the hunting is performed by a conventional lithography (ph〇tc) 11 th qing aphy) method and a zonal DA is formed in parallel with each other to form a plurality of scanning lines 12. Further, around the display area DA (hereinafter referred to as "frontal area"), 320557 11 200919055 common line 161 and a gate line (not shown) are formed. The gate line is placed closer to the display area μ side than the common line 16ι. Further, as shown in Fig. 2, the first low-resistance line lb, the second low-resistance line lb, and the third low-resistance line ΐβ4. The display area DA controls the area of the liquid crystal molecules of the liquid crystal layer in accordance with the signal for the image input from the outside of the liquid crystal display device 1A. On the other hand, the display area DA is the same as the shape of the rectangular transparent substrate u, and is a horizontally long display area DA. Specifically, the common line 16l is formed thicker than the other lines in such a manner that the display area DA is surrounded by the part TA of the front edge area in which the drive IC and the various terminals are disposed. That is, the common line 16i is formed, for example, as shown in Fig. 2 along the two short sides and one long side of the rectangular transparent substrate u to be outside the display area. The drive 1 (: and various terminals) are disposed on one long side of the transparent substrate 未 in which the common line 1 is not formed. The first and third of the first to third low-resistance lines 162, 163 and 164 are provided. The low-resistance lines 162 and 163 are formed in a "low-resistance line in the column (r〇w, horizontal direction)", and are formed in the row (column direction) on the outer side of the display area DA in the column direction. In other words, the first low-resistance line 162 is formed along the long side of the transparent substrate u and formed in parallel with the common line 161. Further, the area outside the display area DA is along the longitudinal direction of the display area μ. Further, the first low-resistance line 162 is provided in a region outside the display area DA, and is preferably as close as possible to the display area. Therefore, it is preferably displayed on the outermost side in the area DA of the display 320557 12 200919055. It is formed as the longitudinal direction of the domain da. Further, the direction of the display area lamp of the row direction=161 is parallel to the scanning line 12, the signal green is 15 horizontal, and the second and the second low resistance are formed. Line c.: Both ends - body connection The common line 16l. The first and second low-resistance lines extending in the longitudinal direction of the mountain are along the 1 tributary area == are respectively connected to the transparent substrate U ^ 162 and 163. 161. By this way, the ί::? can be used as the second electric=i6r, and the appearance can be made smaller, and the effect can be achieved. Further, as shown in FIG. 2, the first low-resistance line formed on the upper side is the second side in the outer-upper Q-domain, and the third low-resistance 2 system is formed on the pixel line 16". 3 low resistance line 6 4 and electrically connected to the common resistance line. In addition: = 10% of the "outside of the low-power DA in the row direction, because the row-side circuit 164 is in the display area, the row-forming direction is formed in the row direction, and the U-low-power 1a-line 162 is parallel to the third slice. The core is electrically connected by a connection line formed on the transparent substrate 11 and the low-resistance line =: and 62, for example, a vertically extending connection line becomes the low line of the line = 320557 13 200919055, and the third line of the line Low-resistance line! 64. Although the low-resistance line 164 can be formed in each row formed in the display region (1), or in each of the plurality of rows, the manner in which each row of the pixel region formed is formed is It is preferable to reduce the external resistance of the electrode top electrode 22 to be described later. The line 5^1 line 162 is common to the line, and the circuit is provided with an electrostatic protection circuit 3G. Specifically, the static protection The circuit 3 is connected to the end of the signal line 15 and the other is connected to the t-line bee 161. Further, the electrostatic protection circuit is provided in the pixel region ==, and the third low-resistance line 164 is formed on the formed side. The electric protection circuit 3 is located next to it (to avoid the static electricity protection) For the configuration and function of the electrostatic protection circuit 3G, the gate and the protection circuit 3 are connected to the end of the signal line 15 and the common line 161 :: two TFTs (TFn, TFT2). (4), on the side of the common line 16l, the high-frequency material is used to make the charge from the signal line side: the opposite side is turned on the signal line 15 side to become a high-voltage material, as shown in Fig. 6 (8) 1:1. The side of the line 161 is released. That is, the electrostatic protection circuit 30 prevents the breakage of the light component caused by the power generation in the process of the liquid crystal display device 1. The terminal is as described above. The end of the 15 and the unillustrated sweep line 12 are connected to the drive π for inputting the signal, and are connected to the common line by the electrostatic protection circuit 3G. Thus, the time domain DA and There is a certain distance between the common line 16] and the electrostatic protection circuit plus 320557 14 200919055. Therefore, in comparison with the existing common line 16i and the third (lower resistance line 164) It is possible to reduce the power-on: 22: pass two, in order to form a connection portion with the upper electrode 22, which will be described later, from * ==6, there is a connection protruding toward the inner side (the display area Μ side); the ground is formed with a wide connection portion of the second low-throttle diagram). Here, the first low-resistance line and the = 2, the connection portion formed by the low-resistance line 163 and 167_ are formed in each row of the pixel region of the --region DA. ', ~ is formed into two turns, and the entire surface is covered by a nitride layer or an oxide (four) The lower part of the table ^ is covered by, for example, Amorphous Stone (Am〇rph〇us siii_, with TFT 2:^' in the same way by the light lithography method and the money engraving method to form a semi-conductor by a_SU_ The region of the scanning line 12 at the position of the right = Zhao layer 14 forms τη = electrode G (photograph 3 of the photo). J can have half = layer:: plywood sighs the surface of the substrate. Furthermore, the light lithography method and the side method are used to vertically scan the display area DA.
开^區姑的方式形程包含源極電極S的訊號、線15,且於TFTThe mode of the open area includes the signal of the source electrode S, the line 15, and is in the TFT
续ι/Υ开^成;及極電極D。另外,於額緣區域形成盘訊號 連接的源極線路(未圖示)。另外,訊號線15之源極U 320557 15 200919055 電極S部分及汲極電極d係皆部分重疊於半導體層14的表 面。 之後’於由上述工程所得的透明基板11之表面全體覆 蓋鈍化膜17。就該鈍化膜π而言,可使用由氮化矽層或 氧化矽層所構成者,但從絕緣性之觀點來看氮化矽層較 好。更且’於純化膜17之表面全體積層例如由壓克力樹脂 或聚醯亞胺(p〇lyimide)樹脂構成的平坦化膜(又稱層間 膜)18。接著,同時形成(1)貫通平坦化膜18及鈍化膜 (passivation film)l7而到達汲極電極d之表面的第j接 觸孔21a ; (2)貫通平坦化膜18、鈍化膜17、及閘極絕緣 膜13而到達共通線路16]之連接部16s表面的第2接觸孔 21b到達第1低電阻化線路Mg之連接部lb表面的第3 ,觸孔21c、及第2低電阻化線路163之連接部16?表面的 第4接觸孔21d。該第1至4接觸孔21a至21d的形成係 可採用乾蝕刻法之一種的電漿蝕刻法。 接著’積層由IT 0或IZ 0所構成的下侧透明導電性層 此時,下_朗導電㈣係魏極雜D、共通線路^ 之連接部165'第1低電阻化線路1β2之連接部i6e、 ‘ 線路163之連接部167電性連接。之後,藉由_ 素區域法及_“於顯示區域da之傳 部成個別形成下電# 19。另外,於共通線路16〗之連接 阻化線路弟^低電阻化線路162之連接部'166、及第2低電 下側透明導電 r層19a又’在此,於共通線路161之連接 320557 16 200919055 部16s、第1低電阻化線路16z之連接部16s及第2低電阻 化線路16」之連接部16?形成的構成係形成為即使接觸孔之 形狀和大小相異也實質上為同一的構成。且,於實施例之 液晶顯示裝置10中,該下電極19係對應於像素電極。 更且,橫誇於形成有下電極19的透明基板11之表面 全體而形成縣厚度的以氮切層或氧切層構成的絕緣 膜20。該絕緣膜20係為了不使平坦化膜18和下電極19 之表面被損傷,故以比閘極絕緣膜13或鈍化膜17之形成 條件穩和的條件,亦即所謂低溫成膜條件進行形成。 ^接著,從該絕緣膜20之表面將形成於第2接觸孔21b、 第3接觸孔21C、及第4接觸孔2id内的絕緣膜钱刻而去 除。且’使該等第2至4接觸孔21b至⑽内的下側透明 導電性層19a露出。之後’橫跨透明基板12之表面全體而 形成由ITG或iZG所構成的透料f.性層。此時,藉由透 明導電性層而經由第2至4接觸孔训至2η而使二 、第!低電阻化線路1β2、及第2低電阻化線路瓜 成為彼此電性連接的狀態。 之後,藉由光微影法及银刻法而餘刻該透明導電相 層,藉此以透明導電性層被覆顯示區域之全體。且,於々 2素區域㈣透料魏層形成具有該產生邊緣電^ =果的複數個騎24的上電極22。料,上電 第8圖所示地成為經由下側透明導電性層咖而與 接部165、第1低電阻化線路162之連接部166 ^ -电阻化線路163之連接部16?的表面彼此電性連接 320557 17 200919055 的狀態。於實施例之液晶顯示裝置^ 對應於共通電極。 中’讀上 又,若欲縮小上電極22之電阻 -----包限,^ 透明導電性層延伸至沿著透明基板U、成上電極烈髮 通線路他上’而於該位置使上電極^邊而形成的兵 性連接也是可考慮的。但*,如上所述,、共通線路⑽電 共通線路16]之間存在有靜電保護電路’於顯示區域DA與 與共通線路16ι之間需要—定的距離〇:從而’顯示區 ^可能接近顯示區域M附近且輿由金屬此峙,上電極 -I線路161電性連接較好,因此經〜屬構戍的 線路之 /、上電極22和共通線路W電性連低電阻線路162 夕,將上電極22於俯視中延伸形成至的方式較好。另 線路162及第2低電阻化線路163之位二成:第1低電阻化 1低電阻化線路162及第2低電 。藉此’比起將第 22更外側之區域時相比,可將液曰^路163設於比上電極 小。 將液日曰顯示裝置1。之大小縮 另外,於共通線路16,之上,一护凡士 22的透明禾3不)。由於已知構成上電極 上層糾封材間的密著性不佳,故儘可能使 良。^減材較佳。就該點而言前述内容也非常優 21(i而忐上私極22係經由第2至4接觸孔21b至 相電性遠桩14第1低電阻化線路162及第2低電阻化163互 連接的狀態。之後,藉由於上電極22側之表面全體 320557 18 200919055 設置配向膜(未圖示)即可完成實 的陣列基板AR。 之峻晶顯示裝置 在與前述陣縣板AR相對向的 略圖示,但亦可使用與以往之FFS色濾光器基板,雖省 的彩色濾光器基板實質相同者。亦即式之液晶顯示面板用 係與以作為像素電極之各者而發揮^^ %彩色遽光器基板 向的位置形成各色彩色濾光器層,及的下電極1 9相對 面1¾有配向膜。且,於彩色濾光器層=色;慮光器層之表 對向於掃描線12及訊號線15的位/、、遷明基板之間的相 置分別設有黑矩陣。接著,可獲得使,、、相對向於TF τ的位 色濾光器基板分卿向^於内部封縣板AR及彩 液晶顯示裝置10。 '之晶以獲得實施例之 依據如上所料製造的㈣例 電極22係經由第2至4接觸孔21 b至^顯示裝置1 〇,_ 路161、第1低電阻化線路Ik、及第 而成為與共通、夸 互相電性連接的狀態。從而,在使第低電阻化線路lf 及第^低電阻化線路163與共通線路^ 1 電阻化線路le 時,第1低電阻化線路162係經由第3低電電性連接的g 成為與共通線路16l電性連接的狀態。-,化線路164而 匕係成為經由多數個接觸孔而舆共通線 ^於上電極 大恶,故即使為了防止殘影而使上電極22㈣性連接的 22之電阻在外觀上也會變得非常小。從而乂 Λ上電極 液晶_示面板,由於不使施加於作為共通,依據實施例之 極U的訊號劣化,故即使為橫長行的 1作的上電 曰碲不裝置其横方 32〇557 19 200919055 向的串擾也少,而成._ 其,若為小型的好的液晶顯示裝置。尤 影響可能較少,但例如6二?上電極22之電阻值的 其之上的大型液晶^ ^英忖左右的中型,或在 合變得更大心、不、置、、上電極22之電阻值的影響 =付更 對於中型、大型的液晶顯轉置更為 又’於前述實施财,在形成為丨透明導電性層前, 存有將形成於第2接觸孔21b、第3接觸孔21 孔⑽内的絕緣膜以飯刻去除的步驟。然而,該步驟也^ ^夜曰“|不區$ 1〇之額緣區域之—料ta同時形成驅動 搭載用端子、檢查端子、外部連接用端子等(皆未圖示) 之際亦而要的步驟’故並非追加新步驟。 ^另外,共通線路161、第1低電阻化線路162、第2低 電阻化線路16 3、及第3低電阻化線路16 4亦可皆以與掃描 線12相同之材料形成’亦可以與訊號線15相同的材料形 成。藉此,亦可於掃描線12和訊號線15之形成時同時地 進仃形成,故可不變更製造步驟的輕易進行形成。對應於 守之弟8圖的示意剖面圖係如第g圖所示,共通線路 161、第1低電阻化線路162、第2低電阻化線路16s、及第 3低電阻化線路164係形成於閘極絕緣膜13之表面。另外, 共通線路16! '第1低電阻化線路16z、第2低電阻化線路 163、及第3低電阻化線路164可全部皆以與訊號線15相同 之材料形成,亦可僅有一部份以與訊號線15相同之材料形 成。 20 320557 ZUUVIVUD^ 以上,用FFS模式之液晶顯示 、 進行說明。如上所述之液晶_示事,為例作為實施力而 行動電話機、行動資訊終端等電^ :使用柃個人電腦、 (A)示有將顯示部(液晶顯示面板)4裔。其中,於第10圖 例子,於第10圖(B)示有相使用於個人電腦70的 板)76使用於行動電話機乃的例子將顯不邹(液晶顯示面 及行動電話機75之基本構成係但,琦述個人電腦7( 其詳細說明。 業者所習知者,故省鸣 又,實施形態並不被上述 形態進行實施。 疋,亦可以如下所述之 (變形例1) :顯示區域I 包_方奶 例如,亦可僅形成於-個長邊個形成共通線路161 時,於顯示區域Μ的形成有H堇形成於兩個長邊。在 低電阻化線路%Μ 路161的_設有第 第1低電阻化線路162、第線路W,則亦可將㈤ 路16!以第3低電阻化線-^且化線路163、及共通衾 (變形例2) ' 64(連接線路)予以連接。 如上所述,第1似雷 他並不限定於著顯-化線路162與第2低電阻 如,亦可以連續於顯^:區域Μ之長邊的方式形成,命 形成低電阻化線路。此DA之周圍(全周或三邊)的方式 位與共通線路1h電、亦可使低電阻化線路的數個部 电,連接,亦可使用連接線路(第3低電 320557 21 =匕線路164)而將低電阻化線輯 (變形例3) …、通線路電性連接。 如上所述,當顯示區 第1低電阻化缘政Μ 為輪長%,雖於列方向 电丨且化線路1β2及第2低電 q万向4 頌不區域DA的長邊方向設. 、、、Ms,但亦可於 區域1M為縱長時係於財化線路’例如,當顯示 於顯示區域da之短邊方化線路。藉此,比起 2低電阻化線路163時成第1低電阻化線路162及第 :平面上看來變大的情況會電^ (變形例4) 到抑制。 如上述,筮】如^ 163、第3低電阻化線路162、第2低電阻化線路 式之透過型液晶顯示襞置ι〇,冓成並不限定使用於FFS模 型之液晶顯示裝置、戈ips “例如亦可應用於反射半透過 =,若為透模式之液棘示裝置。 構成為下電極19為配置於、置,亦可將液晶顯示裝置 於下側的電.極。 ;询的電極、上電極22為配置 【圖式簡單說明】 箄1圖為實施例之液晶壯 伤之示意性的平面圖。 、不骏置的陣列基板的2像素 面圖 第2圖為實施例之液晶_ 、岐置的陣列基板的概略平 第3圖為沿著第1圖之u 第4圖為沿著第】圖之iv 111線的示意性的剖3 、Ιν線的示意性的剖面 320557 22 200919055 第5圖為沿著第2圖之v部分的擴大平面圖。 及⑻為沿著第5圖之x部分的擴大平面圖 ♦ θ '、,、沿著第2圖之VI部分的擴大平面圖。 ^:::沿著第㈣之…视線的示意性的剖面圖。 剖面圖。、對應於實施例之變形例的第8 _示意性之 圖;二Α圖1Α)為不有搭载了液晶顯示面板的個人電腦的 【主要元件:號搭說:液晶顯示面板的行動電話機 玉〇 液晶顯示裝置 12掃描線 14半導體層 161共通線路 162至164第1至3低 16s至167連接部 平坦化膜 作為第1電極的下電極19a 絕緣膜 作〇 213至21d第1至4接觸: =為弟2電極的上電極24開缝 靜電保護電路 71作為f子勸的個人電腦 75、76顯示部(液晶顯示面板) 5作為電子機器的行動電話機 A 顯示區域— TFT(TFT1、TFT2)電晶體 18 19 20 22 30 70 11 13 15 電阻化線路 17 透明基板 閘極絕緣膜 訊號線 鈍化臈 下侧透明導電性層 320557 23Continue ι / Υ open ^ into; and electrode D. In addition, a source line (not shown) to which the disk signal is connected is formed in the forehead area. In addition, the source U 320557 15 200919055 of the signal line 15 is partially overlapped on the surface of the semiconductor layer 14 by the electrode S portion and the drain electrode d. Thereafter, the entire surface of the transparent substrate 11 obtained by the above process is covered with a passivation film 17. As the passivation film π, a layer composed of a tantalum nitride layer or a hafnium oxide layer can be used, but the tantalum nitride layer is preferable from the viewpoint of insulation. Further, a full-scale layer on the surface of the purification film 17 is, for example, a flattening film (also referred to as an interlayer film) 18 composed of an acrylic resin or a p〇lyimide resin. Next, (1) a j-th contact hole 21a that penetrates the planarizing film 18 and the passivation film 17 to reach the surface of the drain electrode d is simultaneously formed; (2) the planarizing film 18, the passivation film 17, and the gate are formed. The second contact hole 21b reaching the surface of the connection portion 16s of the common line 16] of the pole insulating film 13 reaches the third surface of the connection portion lb of the first low-resistance line Mg, the contact hole 21c, and the second low-resistance line 163. The fourth contact hole 21d of the surface of the connecting portion 16 is a surface. The first to fourth contact holes 21a to 21d are formed by plasma etching using one of dry etching methods. Next, the lower transparent conductive layer composed of IT 0 or IZ 0 is laminated. At this time, the connection portion of the first low-resistance line 1β2 of the connection portion 165' of the lower-long conductive (four) system Wei D and the common line ^ The connection portion 167 of the line 163 of i6e, ' is electrically connected. Then, by the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ And the second low-voltage lower transparent conductive layer 19a is further connected to the common line 161 by 320557 16 200919055 portion 16s, the first low-resistance line 16z connecting portion 16s, and the second low-resistance line 16" The structure formed by the connecting portion 16 is formed to be substantially the same even if the shape and size of the contact holes are different. Further, in the liquid crystal display device 10 of the embodiment, the lower electrode 19 corresponds to the pixel electrode. Further, the insulating film 20 made of a nitrogen-cut layer or an oxygen-cut layer of a county thickness is formed by arranging the entire surface of the transparent substrate 11 on which the lower electrode 19 is formed. The insulating film 20 is formed so as not to be damaged by the conditions for forming the gate insulating film 13 or the passivation film 17, that is, the so-called low-temperature film forming conditions, so that the surfaces of the planarizing film 18 and the lower electrode 19 are not damaged. . Then, the insulating film formed in the second contact hole 21b, the third contact hole 21C, and the fourth contact hole 2id is removed from the surface of the insulating film 20. Further, the lower transparent conductive layer 19a in the second to fourth contact holes 21b to (10) is exposed. Thereafter, a transmissive f. layer composed of ITG or iZG is formed across the entire surface of the transparent substrate 12. At this time, by the transparent conductive layer, the 2nd to 4th contact holes are trained to 2η to make the second and the second! The low-resistance line 1β2 and the second low-resistance line are electrically connected to each other. Thereafter, the transparent conductive phase layer is left by the photolithography method and the silver etching method, whereby the entire display region is covered with the transparent conductive layer. Further, the upper electrode 22 having the plurality of rides 24 which generate the edge electric power is formed in the permeable layer. The surface of the connection portion 16 of the contact portion 165 and the first low-resistance line 166 via the lower transparent conductive layer is connected to the surface of the connection portion 16 of the resistive line 163 via the lower transparent conductive layer. Electrical connection 320557 17 200919055 status. The liquid crystal display device of the embodiment corresponds to a common electrode. In the 'reading, if you want to reduce the resistance of the upper electrode 22 ----- limit, ^ the transparent conductive layer extends along the transparent substrate U, the upper electrode is on the line, and the position is made A military connection formed by the upper electrode side is also conceivable. However, as described above, there is a distance between the display area DA and the common line 161 between the common line (10) and the common line 16]. Therefore, the display area may be close to the display. In the vicinity of the region M, the upper electrode-I line 161 is electrically connected, and the upper electrode 22 and the common line W are electrically connected to the low resistance line 162. The manner in which the upper electrode 22 is formed to extend in a plan view is preferable. The other line 162 and the second low-resistance line 163 are at the second position: the first low-resistance 1 low-resistance line 162 and the second low-power. Thereby, the liquid helium path 163 can be set smaller than the upper electrode than when the area outside the 22nd is outside. The liquid display device 1 is displayed. In addition, on the common line 16, above, a transparent Vase 22 of the Vase 22 does not). Since it is known that the adhesion between the upper sealing members of the upper electrode is not good, it is as good as possible. ^ Subtract material is better. In this regard, the above is also very excellent 21 (i, and the upper private pole 22 is connected to the first low-resistance line 162 and the second low-resistance line 163 via the second to fourth contact holes 21b to the phase-electric far-piles 14 The state of the connection. Thereafter, the actual array substrate AR is completed by providing an alignment film (not shown) on the surface of the upper electrode 22, 320557 18 200919055. The prism display device is opposed to the aforementioned array plate AR. Although it is abbreviately shown, it is also possible to use the same color filter substrate as the conventional FFS color filter substrate, that is, the liquid crystal display panel and the pixel electrode are used as the pixel electrode. ^% The position of the color chopper substrate forms a color filter layer of each color, and the opposite surface of the lower electrode 19 has an alignment film. Moreover, in the color filter layer=color; the surface of the photoreceptor layer A black matrix is respectively disposed on the phase of the scanning line 12 and the signal line 15 and between the substrates to be aligned. Then, the position of the color filter substrate relative to the TF τ can be obtained. ^In the internal sealing board AR and color liquid crystal display device 10. 'The crystal to obtain the basis of the example The (four) example electrode 22 manufactured by the above-mentioned method is connected to the display device 1 〇, the _way 161, the first low-resistance line Ik, and the first through the second to fourth contact holes 21 b to the common electrode. When the second low-resistance line lf and the second low-resistance line 163 and the common line 1 are resistive lines le, the first low-resistance line 162 is connected via the third low-electrode-connected g. In a state in which the common line 16l is electrically connected to the common line 164, the common line Φ is connected to the upper electrode via a plurality of contact holes, so that the upper electrode 22 is connected to each other in order to prevent image sticking. The resistance also becomes very small in appearance. Thus, the upper electrode liquid crystal display panel is not applied to the signal of the pole U according to the embodiment, so even if it is a horizontally long row, Power-on 曰碲 does not install its horizontal 32〇 557 19 200919055 direction crosstalk is also small, resulting in. _, if it is a small good liquid crystal display device, especially the impact may be less, but for example, 6 two? Large liquid crystal on top of the resistance value Medium-sized, or the effect of the resistance of the upper electrode 22 becomes greater, no, set, and the upper electrode 22 = pay more for the medium-sized, large-scale liquid crystal display transposition is more 'in the implementation of the above, in the formation of transparent Before the conductive layer, there is a step of removing the insulating film formed in the second contact hole 21b and the third contact hole 21 in the hole (10) by a meal. However, this step also does not mean "| In the forehead region, the material ta simultaneously forms a step for driving the mounting terminal, the inspection terminal, the external connection terminal, and the like (all are not shown). Therefore, a new step is not added. The first low-resistance line 162, the second low-resistance line 163, and the third low-resistance line 164 may be formed of the same material as the scanning line 12, or may be formed of the same material as the signal line 15. Thereby, the formation of the scanning line 12 and the signal line 15 can be simultaneously performed, so that the manufacturing process can be easily performed without changing the manufacturing steps. A schematic cross-sectional view corresponding to the figure of Shouji 8 is shown in FIG. g. The common line 161, the first low-resistance line 162, the second low-resistance line 16s, and the third low-resistance line 164 are formed in the gate. The surface of the pole insulating film 13. Further, the common line 16! 'the first low-resistance line 16z, the second low-resistance line 163, and the third low-resistance line 164 may all be formed of the same material as the signal line 15, or may be only a part It is formed of the same material as the signal line 15. 20 320557 ZUUVIVUD^ Above, the LCD display in FFS mode is used for explanation. In the case of the above-mentioned liquid crystal display, the mobile phone, the mobile information terminal, and the like are used as an implementation power: a personal computer is used, and (A) a display unit (liquid crystal display panel) is shown. In the example of Fig. 10, the example shown in Fig. 10(B) shows that the board used in the personal computer 70) 76 is used in a mobile phone, and the basic configuration of the liquid crystal display surface and the mobile phone 75 is shown. However, the personal computer 7 is described (the detailed description of the personal computer 7 is explained by the industry. Therefore, the embodiment is not implemented in the above-described form. 疋, it can also be as follows (Modification 1): Display area I For example, when the package-side milk is formed on only one long side to form the common line 161, H 堇 is formed on the two long sides in the display region 。. In the low resistance line % Μ 161 When the first low-resistance line 162 and the line W are provided, the (five) way 16! can be the third low-resistance line--and the line 163 and the common line (variation 2) '64 (connected line) As described above, the first ruthenium is not limited to the display line 162 and the second low resistance, and may be formed continuously over the long side of the display region to form a low resistance. Line. The mode around the DA (full or three sides) and the common line 1h, can also make low power The plurality of parts of the circuit are connected, and the connection line (the third low power 320557 21 = the line 164) can be used to electrically connect the low-resistance line (variation 3) ... and the line. When the first low-resistance edge of the display area is % of the wheel length, the length direction of the line 1β2 and the second low-voltage q-direction 4 颂 not area DA are set in the column direction, ., , and Ms, However, when the area 1M is vertically long, it may be based on the financial line 'for short-side lines displayed on the display area da. Thus, the first low-resistance line is formed as compared with the second low-resistance line 163. 162 and the following: When the plane appears to be large, the power is changed (Modification 4) to the suppression. As described above, 筮 163, the third low-resistance line 162, and the second low-resistance line type are transmitted. The liquid crystal display device is not limited to the liquid crystal display device used in the FFS model, and the igos "for example, it can also be applied to the reflective semi-transmission type, and if it is the liquid mode device of the transmissive mode. The lower electrode 19 is configured. It can be arranged, placed, or placed on the lower side of the liquid crystal display device. The electrode and the upper electrode 22 are matched. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic plan view of a liquid crystal implant of an embodiment. A 2-pixel surface view of an array substrate which is not placed on the second embodiment is a liquid crystal _ of the embodiment, and an array substrate of the array Figure 3 is a schematic cross-sectional view along line iv 111 along the line iv 111 of the first drawing, and a schematic cross-section of the line Ιν 320557 22 200919055. 2 is an enlarged plan view of the v portion of the figure. And (8) is an enlarged plan view along the x portion of Fig. 5 ♦ θ ', and an enlarged plan view along the VI portion of Fig. 2. ^::: along the fourth (fourth) ...a schematic cross-sectional view of the line of sight. Sectional view. 8th _ schematic diagram corresponding to the modification of the embodiment; FIG. 1 Α) is a personal computer without a liquid crystal display panel. [Main components: No.: Mobile phone of the liquid crystal display panel Liquid crystal display device 12 scan line 14 semiconductor layer 161 common lines 162 to 164 first to third low 16s to 167 connection flattening film as the first electrode lower electrode 19a insulating film as 〇213 to 21d first to fourth contact: For the upper electrode 24 of the second electrode, the electrostatic protection circuit 71 is used as the display unit (liquid crystal display panel) of the personal computer 75 and 76. The display area of the mobile phone A as an electronic device - TFT (TFT1, TFT2) transistor 18 19 20 22 30 70 11 13 15 Resistive line 17 Transparent substrate gate insulating film signal line passivation 臈 lower transparent conductive layer 320557 23
Claims (1)
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JP2007257177 | 2007-10-01 | ||
JP2008156290A JP5171412B2 (en) | 2007-10-01 | 2008-06-16 | Liquid crystal display device and electronic device |
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TWI399603B TWI399603B (en) | 2013-06-21 |
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KR (1) | KR20090033809A (en) |
CN (1) | CN101609234B (en) |
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JP5500712B2 (en) * | 2009-09-02 | 2014-05-21 | 株式会社ジャパンディスプレイ | LCD panel |
KR101096336B1 (en) * | 2009-10-08 | 2011-12-20 | 하이디스 테크놀로지 주식회사 | Fs mode liquid crystal display device and manufacturing method thereof |
KR20120089505A (en) | 2010-12-10 | 2012-08-13 | 삼성전자주식회사 | Display device and method of manufacturing the same |
US20130286314A1 (en) * | 2010-12-27 | 2013-10-31 | Sharp Kabushiki Kaisha | Display element |
JP5961876B2 (en) * | 2011-08-04 | 2016-08-02 | 株式会社ジャパンディスプレイ | Liquid crystal display |
JP5862201B2 (en) * | 2011-10-27 | 2016-02-16 | セイコーエプソン株式会社 | Liquid crystal device, method for manufacturing liquid crystal device, and electronic apparatus |
JP5681822B2 (en) * | 2014-03-10 | 2015-03-11 | 株式会社ジャパンディスプレイ | LCD panel |
CN105161505B (en) | 2015-09-28 | 2018-11-23 | 京东方科技集团股份有限公司 | A kind of array substrate and preparation method thereof, display panel |
JP2019184864A (en) * | 2018-04-12 | 2019-10-24 | シャープ株式会社 | Display |
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KR100798761B1 (en) * | 1999-09-07 | 2008-01-29 | 가부시키가이샤 히타치세이사쿠쇼 | LCD Display |
JP3697173B2 (en) * | 2000-05-25 | 2005-09-21 | セイコーエプソン株式会社 | Liquid crystal device and electronic device |
JP2002055352A (en) * | 2000-08-09 | 2002-02-20 | Nec Corp | Liquid crystal display and image display device |
JP3994909B2 (en) * | 2003-05-01 | 2007-10-24 | セイコーエプソン株式会社 | Electric wiring structure, method for manufacturing electric wiring structure, substrate for optical device provided with electric wiring structure, electro-optical device, and method for manufacturing electro-optical device |
JP2005045016A (en) * | 2003-07-22 | 2005-02-17 | Nec Electronics Corp | Semiconductor integrated circuit |
JP3979395B2 (en) * | 2004-02-24 | 2007-09-19 | セイコーエプソン株式会社 | Method for manufacturing organic electroluminescent device, organic electroluminescent device, substrate for organic electroluminescent device, and electronic device |
US20060091397A1 (en) * | 2004-11-04 | 2006-05-04 | Kengo Akimoto | Display device and method for manufacturing the same |
JP4297103B2 (en) * | 2005-02-17 | 2009-07-15 | セイコーエプソン株式会社 | ELECTRO-OPTICAL DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE |
JP2007226199A (en) * | 2006-01-26 | 2007-09-06 | Epson Imaging Devices Corp | Liquid crystal device, and electronic equipment |
JP4946135B2 (en) * | 2006-01-31 | 2012-06-06 | カシオ計算機株式会社 | Liquid crystal display element |
JP4645488B2 (en) * | 2006-03-15 | 2011-03-09 | ソニー株式会社 | Liquid crystal device and electronic device |
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- 2008-06-16 JP JP2008156290A patent/JP5171412B2/en not_active Expired - Fee Related
- 2008-09-09 TW TW097134489A patent/TWI399603B/en not_active IP Right Cessation
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KR20090033809A (en) | 2009-04-06 |
JP5171412B2 (en) | 2013-03-27 |
CN101609234B (en) | 2011-08-03 |
JP2009104108A (en) | 2009-05-14 |
CN101609234A (en) | 2009-12-23 |
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