200906546 九、發明說明： 【發明所屬之技術領域】 發明領域 本發明是有關於一種化學機械拋光（Chemical Mechanical Polishing, CMP)裝置，特別是有關於一種研磨墊 調節器（pad conditioner)及其製造方法。 【先前技術】 技術背景 CMP裝程是現代晶圓廠中發展最快速的製程之一。目 前，在積體電路（1C)產業中，CMP製程已被公認是多層電 路0.5微米以下製程中，達到全面平坦化最有效且可靠的方 法。CMP製程近年來大幅成長的原因，一方面是由於超大 型1C隨著元件特徵尺寸的不斷微縮化，而產生對接近原子 等級平坦度的強烈需求，以便解決光微影（photolithography) 製程中光學對焦的問題；另一方面是元件設計層數的增加 ，也更加重了 CMP在整個半導體生產製程步驟中所佔的比 例。一般估計CMP約佔整個製程步驟的25%，因此提升 CMP製程的產能以及降低成本對於半導體製造業而言可謂 當務之急。 CMP製程的性能穩定性受許多製程參數和耗材所影響 ，但在現今設計精良的CMP工具平台中，CMP製程的性能 主要受研磨墊調節器影響。由於研磨墊調節器在調節 (conditioning)研磨墊時，其主要作用是在建立並維持一個穩 定的研磨墊表面凸點（pad asperities)結構，而晶圓的拋光過 5 200906546 程就發生在這個研磨墊凸點，晶圓與研磨液（slurry)的三元 界面上；因此，調節器對於CMP製程的性能表現，包括例 如，移除率（rem〇val rate)、移除率穩定性、平坦度 (planarization)和缺陷率（defectivity)等具有主導地位。但是 ，研磨墊調節器卻是先進的CMp製程模組當中發展最不成 熟’變異性最大的耗材。 傳統上，研磨墊調節器的製造方法是將高壓高溫 (HPHT)合成的鑽石，以具有預設圖案之模孔板或篩網規則 排列並結合於一平面上，例如，中華民國專利公告第 412461號「修整晶圓拋光墊的鑽石碟及其製法」，中華民國 專利公告第575477號「化學機械研磨調節器，使用於化學 機械研磨調g卩H之硬質紙粒的排列方法，及化學機械研磨 調節器I 方法」。^而’前揭方式雖可達到使鑽石磨粒以 適當間距規則排列的㈣，惟因每顆鑽石的尺寸大小和幾 何形狀並不完全相同，^每顆鑽石在其結合位置上的指向 ㈣entadon)是隨機的（rand〇m)，目此在言周f器上鑽石的凸 出高度會有相當大的差異。 —圖1為一種傳統的隨機排列鑽石磨粒指向之研磨墊調 節器9的剖面示意圖，其中，複數個大致上具有立方八面 體（cuboctahedmn)結晶形態之合成鑽石絲91係藉一結合 劑層92結合於-基材93上，鑽石磨粒91的凸出高度別 會隨著鑽石的大小、形狀和排列指向出現很大的變動範圍 。通常，傳統的調節器上，鑽石凸出高度94之間的差距範 圍至少在50微米至ι〇〇微米。 6 200906546 【發明内容】 【發明說明】 【發明所欲解決的課題】 如圖1所示之傳統的調節器中，鑽石磨粒的凸出高度 94不一致時，除了會造成鑽石在研磨墊表面刻劃的溝紋深 淺不 所形成的表面凸點結構大小不均，導致拋光均勻 性不佳，缺陷率高以外，研磨墊也會被太凸出的鑽石磨粒 過度修除，造成研磨墊使用壽命縮短，更大幅增加耗材成 本0 另外，傳統的調節器上，因鑽石凸出高度94的差距大 ’也導致只有少數最凸出的鑽石負擔了全部的調節工作； 而這些工作鑽石（working diam〇nd)的數量可能只佔調節器上 全部的鑽石數量之1%以下。其結果，因為少數的工作鑽石 承受了最大的磨耗作用後較易於純化，使得調節器對研磨 墊的切削率（eut rate)在幾十個小時内就急遽下降，晶圓移除 率穩定性因而降低，產能也無法提升。 再者，如圖1所示之傳統的調節器上，因為鑽石磨粒 的排列指向是隨機的，所以除了會影響鑽石的凸出高度94 以外’鑽石可能以各種不同形狀的切刃來刻割研磨墊，進 而影響整個拋光過程。高壓合成的立方人面體鑽石，其外 形與其在<100>和<111>社曰士人， 《^>、.'〇日日方向上的生長速度之比值（BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical polishing (CMP) device, and more particularly to a pad conditioner and a method of manufacturing the same . [Prior Art] Technical Background CMP process is one of the fastest growing processes in modern fabs. At present, in the integrated circuit (1C) industry, the CMP process has been recognized as the most efficient and reliable method for achieving full planarization in a multilayer circuit of 0.5 micron or less. The reason why the CMP process has grown significantly in recent years is that on the one hand, the ultra-large 1C has a strong demand for near-atomic flatness as the feature size of the device is continuously reduced, so as to solve the optical focus in the photolithography process. The problem; on the other hand, the increase in the number of component design layers also adds to the proportion of CMP in the entire semiconductor manufacturing process. It is generally estimated that CMP accounts for about 25% of the entire process step, so increasing the capacity of the CMP process and reducing costs are a top priority for the semiconductor manufacturing industry. The performance stability of CMP processes is affected by many process parameters and consumables, but in today's well-designed CMP tool platforms, the performance of CMP processes is primarily affected by the pad conditioner. Since the polishing pad conditioner is conditioning the polishing pad, its main function is to establish and maintain a stable pad asperities structure, and the polishing of the wafer occurs in this grinding. Pad bumps, wafers and slurries on the ternary interface; therefore, regulator performance for CMP processes including, for example, removal rate (rem〇val rate), removal rate stability, flatness (planarization) and defectivity (defectivity) have a dominant position. However, the polishing pad conditioner is the least developed and most versatile consumable in the advanced CMp process modules. Conventionally, the polishing pad conditioner is manufactured by regularly arranging and bonding a high-pressure high-temperature (HPHT) synthetic diamond to a plane in a die plate or screen having a predetermined pattern, for example, the Republic of China Patent Publication No. 412461 No. "Diamond disc for trimming wafer polishing pad and its preparation method", Republic of China Patent Bulletin No. 575477 "Chemical mechanical polishing regulator, method for arranging hard paper particles for chemical mechanical polishing, and chemical mechanical polishing Regulator I method". ^And the 'previous method can achieve the diamond abrasive grains arranged at the appropriate spacing (4), but because each diamond's size and geometry are not exactly the same, ^ each diamond points in its binding position (four) entadon) It is random (rand〇m), so there is a considerable difference in the height of the diamond on the horn. - Figure 1 is a schematic cross-sectional view of a conventional randomly arranged diamond abrasive grain directed polishing pad conditioner 9, wherein a plurality of synthetic diamond filaments 91 having a substantially cubic octahedron (cuboctahedmn) crystalline form are bonded by a bonding agent layer. 92 is bonded to the substrate 93, and the protruding height of the diamond abrasive grains 91 may vary greatly depending on the size, shape and arrangement direction of the diamond. Typically, on conventional regulators, the difference in diamond projection height 94 ranges from at least 50 microns to ι microns. 6 200906546 [Description of the Invention] [Explanation of the Invention] [Problems to be Solved by the Invention] In the conventional regulator shown in Fig. 1, when the protruding heights 94 of the diamond abrasive grains are inconsistent, the diamond is inscribed on the surface of the polishing pad. The unevenness of the surface of the groove is not uniform, resulting in poor polishing uniformity and high defect rate. The polishing pad is also over-exposed by the excessively protruding diamond abrasive grains, resulting in the life of the polishing pad. Shortening, and significantly increasing the cost of consumables. 0 In addition, the traditional regulators, because of the large difference in the height of the diamond protrusion 94, also caused only a few of the most prominent diamonds to bear the full adjustment work; and these working diamonds (working diam〇 The number of nd) may only be less than 1% of the total number of diamonds on the regulator. As a result, since a small number of working diamonds are subjected to the maximum wear and are easier to purify, the eut rate of the regulator to the polishing pad is rapidly decreased within several tens of hours, and the wafer removal rate stability is thus Reduced, capacity can not be improved. Furthermore, as in the conventional regulator shown in Fig. 1, since the alignment of the diamond abrasive grains is random, in addition to affecting the protruding height 94 of the diamond, the diamond may be cut with various shapes of cutting edges. The polishing pad, which in turn affects the entire polishing process. The ratio of the growth rate of the high-pressure synthetic cubic human face diamond to its growth rate in the daily direction of <100> and <111>
Vmw/Vw〉）彳關。2⑷〜⑷所示為四種常見之市售立 方八面體合成鑽石之結晶形態及其相對應的生長速度比值 。其中圖2(a)所示為V<1QG>/V<ui㈣8〇的鑽石結晶型態 200906546 ’圖2(b)所示為v<⑽>/ν<ιη>=〇87的鑽石結晶型態，圖 2(C)所不為V<i〇〇>/V<ni> = 1.00的鑽石結晶型態，圖2(d)所 不為V<100>/v<ln> = i.i55的鑽石結晶型態。如圖2⑷〜⑷ 所示，鑽石晶體均由8個八面體（octahedron)的{111}面911 ，和6個立方體912圍成。晶形完整的合 成鑽石會形成許多銳利的尖點913或棱線914。 如圖3所示，鑽石磨粒91以尖點913、稜線914或面 911、912刻劃研磨墊81時，所產生的溝槽結構會有些差異 。當下施力（down f0rce) 80相同時，尖點913或稜線914與 研磨墊81的接觸面積相對較小，因此切刀下方的壓力較大 刺入研磨墊81的深度較深，能切割出窄深的溝槽⑴； 反之，平面9U、912與研磨墊81的接觸面積大，切刃下方 的Μ力較小，刺入研磨墊8〗的 1的，木度較淺，僅能刮擦出寬而 淺的溝槽812。不同形狀的知刀力，告，t 个㈣狀的切刀刻劃出不同形狀的溝槽，自 然地也在研磨墊81表面建立不同形貌的表面凸點結構。銳 利^點9U或稜線914切刀切割出窄深的溝槽⑴，形成 較厚而強物的表面凸點結構。剛性較 加較大的晶圓/研磨塾界面麼力，因此晶圓的二= 高且缺陷率較低。平面911、912的 溝…是形成較薄而鬆散的表面凸點=之= 不佳，易於在隨後的晶圓/研磨墊接觸磨耗中、耐磨性 (g:，導致晶圓的村料移除率降低，缺陷率也二磨平 傳統的研磨塾調節器對於鑽石的 ^ ° 無法做有效控制，因而有些專利已提出解==切刀形狀 系’例如中 8 200906546 華民國專利公告第58G42G號揭露-種製造方法，其利用在 一片狀基材中形成多數個穿孔狀凹部，使各凹部可容納— 鑽石粒的基端，並使鑽石粒的一尖點可落於對應的穿孔令 ，再將鑽石粒與基材固結，用以使鑽石粒外露於基材的部 分具有最佳化方位。然而，各鑽石粒的形狀尺寸不會完全 一致’當形狀尺寸不同的鑽石粒容置於尺寸相同的凹部時 ，各鑽石粒的凸出高度即會產生相當大的差異。此外，例 如中華民國專利公告第587972號揭露利用—間隔物，並在 間隔物上形成多數個孔，各孔鄰近間隔物底面的部分為直 徑小於鑽石（超磨料）平均粒徑的圓筒形，各孔的直徑從 圓筒形頂端至間隔物頂面之間連續擴大（概呈碗形），且各 孔在間隔物頂面位置的直徑為鑽石平均粒徑的L02〜4倍， 在各孔中設置-鑽石粒後，於間隔物的頂面形成一結合層 用以固著鑽石，再將間隔物去除。由於鑽石粒在孔中時， 部分位於孔的圓筒形處，部分位於孔的碗形處，該方法主 :利用結合層可填充於孔的碗形處，而將鑽石粒位於碗形 -的部分包覆於結合層中並使結合層形成凸狀突起，且位 =Μ㈣㈣可露出結合層外’藉此可使鑽石粒能較 :於結合層的平坦部’又能具有較佳的固持力，以避免 疋該方去對於鑽石的凸出高度和切刃形狀 的改善功效相當有限。 【用以解決課題的手段】 為解決習知技術中所存在之前揭課題，本發明提供一 種可以控制鑽石凸屮古 躓凸出间度和切刀形狀的研磨墊調節器之製 200906546 造方法’藉以克服高壓合成鑽石先天的大小與形狀差異， 使得鑽石凸出高度之間的差距縮小。尤其，依據本發明之 製法可以使研磨墊調節器之鑽石磨粒以其銳利的尖點或棱 線朝上作為調節研磨墊的切刀，藉而同時解決習知技術中 鑽石凸出咼度和切刀形狀缺乏一致性的問題。 另外，本發明亦提供一種樹脂黏結研磨墊調節器，具 有一致性極佳的鑽石凸出高度和切刃形狀，並能避免鑽石 磨粒脫落，且以樹脂層與鑽石磨粒結合，可大幅降低成本 〇 【發明之詳細說明】 本發明之研磨墊調節調的製造方法包括下列步驟： 提供一基板，於其一表面上形成有複數個未貫穿該基 板之倒錐形凹坑； 於该等凹坑的錐頂充填預定份量且可去除的膠黏劑； 將複數個鐵石磨粒置入對應的各該凹坑内； 施壓於該等鑽石磨粒，藉以使各該鑽石磨粒的一部份 到達相對應的各該凹坑之錐頂； t將該結合有鑽石磨粒之基板置於一模具内，並注入樹 脂使之形成一包覆該等鑽石磨粒的樹脂層； 脫模並分離該樹脂層與該基板；及 清除該等鑽石磨粒上之未與該樹脂層結合的部分之膠Vmw/Vw>) Shaoguan. 2(4)~(4) show the crystal morphology of four common commercially available octahedral synthetic diamonds and their corresponding growth rate ratios. Fig. 2(a) shows a diamond crystal form of a V<1QG>/V<ui(4) 8 inch. Fig. 2(b) shows a diamond crystal form of v<(10)>/ν<ιη>=〇87 Fig. 2(C) is not a diamond crystal form of V<i〇〇>/V<ni> = 1.00, and Fig. 2(d) is not V<100>/v<ln> = i.i55 Diamond crystal form. As shown in Fig. 2 (4) to (4), the diamond crystals are surrounded by 8 octahedron {111} faces 911 and 6 cubes 912. A crystallized synthetic diamond will form a number of sharp cusps 913 or ridges 914. As shown in Fig. 3, when the diamond abrasive grains 91 are scribed with the sharp points 913, the ridges 914 or the faces 911, 912, the groove structure is somewhat different. When the downward force (down f0rce) 80 is the same, the contact area of the sharp point 913 or the ridge line 914 with the polishing pad 81 is relatively small, so the pressure under the cutter is deeper and the depth of the polishing pad 81 is deeper, and the cutting can be narrowed. The deep groove (1); conversely, the contact area of the plane 9U, 912 and the polishing pad 81 is large, the force of the blade below the cutting edge is small, and the penetration of the polishing pad 8 is shallow, the woodiness is shallow, and only the scratch can be scraped out. Wide and shallow groove 812. Different shapes of the cutter force, t, (t) shaped cutters are used to scribe grooves of different shapes, and naturally, surface bump structures of different shapes are also established on the surface of the polishing pad 81. A sharp 9D or ridge 914 cutter cuts a narrow groove (1) to form a thick and strong surface bump structure. The stiffness is greater than the larger wafer/grinding interface, so the wafer has a high = 2 and a low defect rate. The grooves of the planes 911, 912 are formed by thin and loose surface bumps = = poor, easy to wear in the subsequent wafer / polishing pad contact wear, wear resistance (g:, the wafer material shift The removal rate is reduced, and the defect rate is also two. The conventional grinding 塾 adjuster can not effectively control the diamond's ^ °, so some patents have proposed a solution == cutter shape system'. For example, Zhong 8 200906546 Huaminguo Patent Announcement No. 58G42G A method of manufacturing a method for forming a plurality of perforated recesses in a sheet-like substrate such that the recesses can accommodate the base end of the diamond particles and allow a sharp point of the diamond particles to fall within the corresponding perforation order. The diamond particles are then consolidated with the substrate to optimize the orientation of the diamond particles exposed to the substrate. However, the shape and size of each diamond particle will not be exactly the same 'When the shape and size of the diamond particles are placed When the recesses of the same size are used, the protruding height of each diamond particle is considerably different. In addition, for example, the Republic of China Patent Publication No. 587972 discloses the use of a spacer, and a plurality of holes are formed in the spacer, and the holes are adjacent to each other. The bottom surface of the partition is a cylindrical shape having a diameter smaller than the average diameter of the diamond (superabrasive), and the diameter of each hole is continuously expanded from the cylindrical top end to the top surface of the spacer (substantially bowl shape), and the holes are The diameter of the top surface of the spacer is L02 to 4 times the average particle diameter of the diamond. After the diamond particles are placed in each hole, a bonding layer is formed on the top surface of the spacer to fix the diamond, and the spacer is removed. Since the diamond particles are in the hole, the portion is located at the cylindrical shape of the hole, and the portion is located at the bowl shape of the hole. The method main body: the bonding layer can be filled in the bowl shape of the hole, and the diamond grain is located in the bowl shape- Partially coated in the bonding layer and forming the bonding layer to form a convex protrusion, and the position=Μ(4)(4) can expose the outside of the bonding layer, thereby enabling the diamond particles to have better holding power than the flat portion of the bonding layer. In order to avoid the improvement of the convex height and the shape of the cutting edge of the diamond, the effect of the improvement is quite limited. [Means for Solving the Problem] In order to solve the problems disclosed in the prior art, the present invention provides a diamond controllable Convex And the shape of the knife-shaped polishing pad adjuster 200906546 to overcome the difference in the size and shape of the high-pressure synthetic diamond, so that the difference between the diamond protrusion height is reduced. In particular, the polishing pad can be adjusted according to the method of the present invention. The diamond abrasive grain of the device is used as a cutter for adjusting the polishing pad with its sharp sharp point or ridge line upward, thereby solving the problem of the lack of consistency of the diamond convexity and the shape of the cutter in the prior art. The invention also provides a resin bonded polishing pad adjuster, which has excellent uniformity of diamond protrusion height and cutting edge shape, and can avoid diamond abrasive particles falling off, and the resin layer and the diamond abrasive grain are combined, which can greatly reduce the cost. DETAILED DESCRIPTION OF THE INVENTION The manufacturing method of the polishing pad of the present invention comprises the following steps: providing a substrate having a plurality of inverted conical pits not penetrating the substrate formed on one surface thereof; and cones of the pits Filling a predetermined amount and removable adhesive; placing a plurality of iron abrasive grains into the corresponding pits; applying pressure to the diamond abrasive grains a portion of each of the diamond abrasive particles reaches a corresponding cone top of each of the pits; t placing the substrate bonded with the diamond abrasive grains in a mold, and injecting a resin to form a diamond grinding machine a resin layer of the granule; demolding and separating the resin layer from the substrate; and removing a portion of the diamond abrasive grains that is not bonded to the resin layer
二劑，即可獲得鑽石磨粒的尖點或稜線朝上之研磨塾調r 器。 P 該等凹坑以直立錐形為佳，具體而言可舉例如，直立 10 200906546 四角錐形、直立二角錐形或直立圓錐形等。此外，關於基 板表面之直立錐形凹坑係以僅容許鑽石磨粒以其尖點或稜 線朝下的狀‘4置人凹坑内為佳。因此為配合所使用之鐵石 磨粒的大J和化狀，各凹坑之頂角的角度以介於6〇。至i 2〇。 為佳，且深度以設成鑽石粒徑之G.25至G.95倍為宜。 本發明之研磨墊調節器的製造方法中，關於在基板表 面凹坑的錐頂充填膠黏劑的方式並無特殊限制，適用者可 以舉例如，網版印刷法、點膠法（dispensing)、噴塗法 (spraying)或喷墨法（inkjet)等。 充填膠黏劑時，膠黏劑之量以使其充填高度達到凹坑 冰度之1/10〜9/10為宜，較佳為達到凹坑深度之1/5〜3/5 。當膠黏劑的充填高度未達凹坑深度之1/1〇時，以尖點或 稜線朝下落入凹坑之鑽石磨粒可能因幾何形狀上之干涉而 無法深入凹坑底部，以致於無法接觸到膠黏劑或因黏結力 太弱而難以停留在凹坑内。t膠黏劑的充填高度超過凹坑 深度的9/10，則因凹坑幾乎被膠黏劑填滿而失去幾何形狀 的干涉作用，以致於以任何指向落入凹坑的鑽石磨粒都可 能被黏住而無法有效控制鑽石磨粒的排列指向。 本發明中所使用之膠黏劑只要可以產生暫時性的膠黏 作用即可’並無特殊限制，合適者可以舉例如天然橡膠、 氣丁橡膠(ne—ene rubber)、丙烯酸酯、矽酮(silic〇ne)及聚 氨酯系（polyurethane)膠黏劑等。 另外，本發明中所使用之樹脂可為熱塑性樹脂或熱固 性樹脂，以熱固性樹脂為佳，具體者可以舉例如，不飽和 11 200906546 知西日樹月日（p〇lyester resin)、乙稀酋旨樹脂（vinyi ester resin) 、環氧樹月日（epoxy resin)、盼樹脂（phenolic resin)、雙馬來 醯亞胺（bismaleimide)、聚醯亞胺（polyimide)樹脂等，其中 較佳者為環氧樹脂。 另外’本發明亦提供一種樹脂黏結研磨墊調節器，其 包括一樹脂層及與該樹脂層形成永久結合之複數個鑽石磨 粒，其中該等鑽石磨粒以尖點或稜線朝上者佔全部鑽石磨 粒之70%以上。 再者，本發明之樹脂黏結研磨墊調節器中，該等鑽石 磨粒突出樹脂層之高度，彼此間至多相差4〇微米。 此外’本發明之樹脂黏結研磨墊調節器中，該等鑽石 磨粒係各自座落於一樹脂錐臺上，且該等樹脂錐臺係在以 樹脂灌注形成樹脂層時，一體成型在該樹脂層的表層。 另外，本發明中所使用之鑽石磨粒為大致上具有立方 八面體結晶形態之高壓合成鑽石顆粒，且粒徑以介於美國 篩網140目〜1〇目者為佳。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之三個較佳實施例的詳細說明中，將可 清楚的呈現。 ^ΜίΜΛ. 基板之製作 參閲圖4⑷〜⑷，在本實施例中基板丨的製作是先形成 -公模沖2,並利㈣印方式在-塑膠片u形成倒錐形凹 12 200906546 坑12。公模沖2是以線切割放電加工方式，在_直徑為 110mm、厚度為30mm的不銹鋼（SUS3〇4)塊η之一表面 ’形成多數個直立四角錐體22,表面211即為公财2 的遷印面211。該等直立四角錐體22分佈於璧印面叫上 直徑H)0mm的圓形區域内，且兩兩相鄰的四角_22_ 角221間距為700卿’各四角錐體22的頂角22ι約卯度 ，且垂直高度約350卿。塑膠片n為聚丙烯材質，直徑： 110mm’厚度為〇·4_。以1〇Μρ&的屢力使公模沖2在塑 膠片U上壓印形成約15,785個未貫穿塑膠片11的倒直立 四角錐形凹坑12,各凹坑12錐頂121的角度約％度，且 凹坑深度m❸225/m’凹坑寬度123約45〇师，兩兩相 鄰的凹坑12的錐頂121間距為7〇〇jUm。 口值得一提的是，在基板表面形成倒錐形凹坑的方式， 只要可以使基板表面形成底部未穿孔的錐形凹孔即可，並 無特殊限制。例如除上述塵印方式之外，亦可應用前述之 加工壓印用公模沖的方式，以射出成型法來提供一塑膠材 質的基板。或者’可以利用電鑄或壓鑄㈣方式製 作金屬材質的基板。此外’亦可採行不使用模具的製造方 、、亦即可以利用放電加工、超音波加工、微銳削、雷射 加二、電子束加或或離子束加工等方式，直接對基板表面 進灯加工’使其形成複數個底部未穿孔之倒錐形凹坑。 曼塞_劑之奋.土_ '參閱圖5,利用網版印刷方式充填膠黏劑31於基板1 的凹坑12之錐頂121處。網版32為厚度50哗的不錄鋼片 13 200906546 ，其上以雷射鑽孔方式形成有對應於凹坑12錐頂121位置 的圓形穿孔32卜各圓形穿孔321的直徑為〇 2酿，圓形穿 孔321總數約15,785個。膠黏劑31是以3M公司生產的水 性壓克力系感壓型接著劑（型號sp_7533 )，與去離子水以 重量比1 : 1的比例混合，並攪拌均勾後所形成。以網版印 刷方式將基板I置於一網印平台33上，並使網版32的穿 孔32!對應於凹坑12位置，以刮刀34塗佈膠黏劑31。待 填充膠黏劑31於各凹坑12底部後，將基板丨置入熱風循 環烘箱中，以5(TC烘乾15分鐘後’膠黏劑31於凹坑12底 部的充填高度311 (參閱圖6)約為50jtim。 鑽石磨敕之晋入輿渣险 參閱圖6，將多數個鑽石磨粒4散佈於充填有膠黏劑 31的基板1上，並以壓克力毛刷輕輕來回掃動散佈在基板 1上的鑽石磨粒4 ,使鑽石磨粒4以尖點或稜線朝下的狀態 落入凹坑12内，並被膠黏劑31黏住形成暫時性的結合。 此處所採用之手段並無特殊限制，只要能使鑽石磨粒4在 基板1表面翻滚移動以調整落入凹坑的指向，任何方式皆 可做為配置鑽石磨粒4的方法，例如讓基板1產生擺動或 振動，造成鑽石磨粒4在基板1上翻滚移動位置亦可。 待基板1表面的每個凹坑12都大致結合有一個鑽石磨 粒4之後’再以壓克力毛刷將未被結合在凹坑a内的多餘 鑽石磨粒刷除。此處亦可採用將基板1反轉並振動的方式 ’使未被結合在基板1表面的凹坑12内之多餘的鑽石磨粒 脫落。 14 200906546 本實施例所用的鑽石磨粒4且右& 具有如圖2(a)〜(d)所示的立 方八面體型態，粒徑範圍小於美 、夫師網4〇目，大於美國 網45目，為ELEMENTSIX公司斛斗本 … Λ a㈠所生產，型號SDB1100。 將鑽石磨敕壓$ w拉f i t 參閱圖7,透過一厚度為3.〇mm的石夕膠片35對以前述 步驟所形成之每個凹坑12都結合有—個鑽石磨粒4的基板 1施加一約G.2MPa的均勻壓力，將鑽石磨粒4更進一步地 塵入凹坑12底部，使鑽石磨粒4的尖點41或稜線a大致 達到凹坑12的錐頂121處。 如此，可以確保鑽石磨粒4在後續的操作過程中暫時 穩固地結合在凹坑12内而不會輕易地移動。尤其，鑽石磨 粒的尺寸有相當的差異，但是透過此一施廢操作可以使 鑽石磨粒4接近基板丨之凹坑12錐頂121。 在本實拖财’為使施力均勻分佈至鑽石錄4，所使 用的軟質材料切膠片’但也可採料他彈㈣材料，例With two doses, you can get the sharp point of the diamond abrasive grain or the grinding edge of the diamond ridge. P The pits are preferably erected, and specifically, for example, upright 10 200906546 quadrangular pyramid, upright digonal pyramid or upright conical shape. Further, it is preferable that the upright tapered pits on the surface of the substrate are such that only the diamond abrasive grains are allowed to have their sharp points or ridges facing downward. Therefore, in order to match the large J and the shape of the stone abrasive grains used, the angle of the apex angle of each pit is 6 〇. To i 2〇. Preferably, the depth is preferably set to G.25 to G.95 times the diameter of the diamond. In the method for producing a polishing pad conditioner of the present invention, the manner in which the tip of the pit on the surface of the substrate is filled with an adhesive is not particularly limited, and for example, a screen printing method, a dispensing method, or the like may be employed. Spraying or inkjet (inkjet) and the like. When filling the adhesive, the amount of the adhesive is such that the filling height is 1/10 to 9/10 of the pit ice, preferably 1/5 to 3/5 of the pit depth. When the filling height of the adhesive is less than 1/1 of the depth of the pit, the diamond abrasive grains falling into the pit with sharp points or ridges may not penetrate the bottom of the pit due to geometric interference, so that the adhesive cannot be It is difficult to stay in the pit due to contact with the adhesive or because the bonding force is too weak. The filling height of the t-adhesive exceeds 9/10 of the depth of the pit, so that the pit is almost filled with the adhesive and loses the interference of the geometric shape, so that any diamond abrasive grains falling into the pit may be It is stuck and cannot effectively control the alignment of the diamond abrasive grains. The adhesive used in the present invention is not particularly limited as long as it can produce a temporary adhesive action, and suitable examples thereof include natural rubber, ne-ene rubber, acrylate, and anthrone ( Silic〇ne) and polyurethane adhesives. Further, the resin used in the present invention may be a thermoplastic resin or a thermosetting resin, and a thermosetting resin is preferable, and specific examples thereof include, for example, unsaturated 11 200906546, p〇lyester resin, and Vinyi ester resin, epoxy resin, phenolic resin, bismaleimide, polyimide resin, etc., of which a ring is preferred. Oxygen resin. In addition, the present invention also provides a resin bonded abrasive pad conditioner comprising a resin layer and a plurality of diamond abrasive grains permanently bonded to the resin layer, wherein the diamond abrasive grains occupy the entire portion with a sharp point or a ridge line upward. More than 70% of diamond abrasive grains. Further, in the resin bonded abrasive pad conditioner of the present invention, the diamond abrasive grains protrude from the height of the resin layer by at most 4 μm from each other. Further, in the resin bonded polishing pad conditioner of the present invention, the diamond abrasive grains are each seated on a resin frustum, and the resin frustum is integrally molded on the resin when the resin layer is formed by resin infusion. The surface layer of the layer. Further, the diamond abrasive grains used in the present invention are high-pressure synthetic diamond particles having a substantially cubic octahedral crystal form, and the particle diameter is preferably from 140 mesh to 1 mesh of the US mesh. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the drawings. ^ΜίΜΛ. For the fabrication of the substrate, referring to Fig. 4 (4) to (4), in the present embodiment, the substrate is formed first - the male die is punched, and the (four) printed mode is formed in the plastic film u to form the inverted tapered recess 12 200906546 Pit 12 . The male die punch 2 is a wire-cut electric discharge machining method, and a plurality of upright quadrangular pyramids 22 are formed on one surface of a stainless steel (SUS3〇4) block η having a diameter of 110 mm and a thickness of 30 mm, and the surface 211 is a public wealth 2 The reprinted surface 211. The upright quadrangular pyramids 22 are distributed in a circular area of the embossed surface called the diameter H) 0 mm, and the adjacent four corners _22_ corner 221 are spaced apart by 700 ' 'the apex angle 22 of each of the quadrangular pyramids 22 Degree, and the vertical height is about 350 qing. The plastic sheet n is made of polypropylene and has a diameter of 110 mm' and a thickness of 〇·4_. With the repeated force of 1〇Μρ&, the male die punch 2 is embossed on the plastic sheet U to form about 15,785 inverted upright quadrangular pyramid pits 12 which do not penetrate the plastic sheet 11, and the angle of the cone top 121 of each pit 12 is about % Degree, and the pit depth m ❸ 225 / m 'pit width 123 is about 45 〇 division, the pitch of the cone top 121 of the adjacent two adjacent pits 12 is 7 〇〇 jUm. It is worth mentioning that the manner of forming the inverted conical pits on the surface of the substrate is not particularly limited as long as the surface of the substrate can be formed with a conical recessed hole having no perforations at the bottom. For example, in addition to the above-described dust printing method, the above-described male stamping method for processing imprinting may be applied to provide a plastic material substrate by injection molding. Alternatively, a substrate made of a metal material can be produced by electroforming or die casting (four). In addition, it is also possible to use a mold that does not use a mold, that is, it can be directly applied to the surface of the substrate by means of electrical discharge machining, ultrasonic processing, micro sharpening, laser addition, electron beam addition or ion beam processing. The lamp is processed to form a plurality of inverted conical pits that are not perforated at the bottom. Manse _ Agent's Fen. Earth _ ' Referring to Figure 5, the adhesive 31 is filled in the taper top 121 of the pit 12 of the substrate 1 by screen printing. The screen 32 is a non-recorded steel sheet 13 200906546 having a thickness of 50 ,, and a circular perforation 32 corresponding to the position of the cone top 121 of the dimple 12 is formed by laser drilling, and the diameter of each circular perforation 321 is 〇2. The total number of rounded perforations 321 is approximately 15,785. The adhesive 31 is formed by mixing a water-based acrylic pressure-sensitive adhesive (model sp_7533) produced by 3M Company with deionized water at a weight ratio of 1:1 and stirring. The substrate I is placed on a screen printing platform 33 in a screen printing manner, and the through hole 32! of the screen 32 corresponds to the position of the pit 12, and the adhesive 31 is applied by the doctor blade 34. After the adhesive 31 is filled in the bottom of each pit 12, the substrate is placed in a hot air circulating oven, and the filling height 311 of the adhesive 31 at the bottom of the pit 12 is 5 (after drying for 15 minutes). 6) About 50jtim. Diamond smashing into the slag slag risk Referring to Figure 6, a plurality of diamond abrasive particles 4 are spread on the substrate 1 filled with the adhesive 31, and gently swept back and forth with an acrylic brush. The diamond abrasive grains 4 scattered on the substrate 1 are caused to fall into the dimples 12 with the sharp points or ridges facing downward, and are adhered by the adhesive 31 to form a temporary bond. The means is not particularly limited as long as the diamond abrasive grains 4 can be tumbled on the surface of the substrate 1 to adjust the orientation of the falling into the pits, and any method can be used as a method of arranging the diamond abrasive grains 4, for example, causing the substrate 1 to oscillate or The vibration causes the diamond abrasive grains 4 to roll over the substrate 1. However, each pit 12 on the surface of the substrate 1 is substantially combined with a diamond abrasive grain 4, and then the acrylic brush will not be bonded. The excess diamond abrasive grains in the pit a are removed. Here, the substrate 1 can be reversed and vibrated. The way 'to remove excess diamond abrasive grains that are not bonded in the pits 12 on the surface of the substrate 1. 14 200906546 The diamond abrasive grains 4 used in this embodiment and the right & have as shown in Figs. 2(a) to (d) The cubic octahedral type, the particle size range is less than that of the United States, the Master's net 4, which is larger than the US net 45 mesh, is the ELEMENTSIX company's hopper... Λ a (one) produced, model SDB1100. The diamond whipped pressure $ w Pull fit Referring to FIG. 7, a substrate of the diamond abrasive grains 4 is bonded to each of the pits 12 formed by the foregoing steps through a stone etch film 35 having a thickness of 3. 〇mm. Uniform pressure, the diamond abrasive particles 4 are further dusted into the bottom of the dimple 12, so that the sharp point 41 or the ridge line a of the diamond abrasive grain 4 substantially reaches the cone top 121 of the dimple 12. Thus, the diamond abrasive grain 4 can be ensured During the subsequent operation, it is temporarily firmly integrated in the dimple 12 without moving easily. In particular, the size of the diamond abrasive grains is quite different, but the diamond abrasive grains 4 can be brought close to the substrate by this waste disposal operation. Pit 12 cone top 121. In this real money 'for the even force distribution to the diamond Record 4, the soft material used to cut the film 'but can also pick up his bomb (four) material, for example
如天然橡膠或聚氯乙烯等。所施加的壓力也可選用在 O.IMPa至lMPa範圍内的壓力為佳。 樹脂之注入輿碌化 參閱圖8,在-模具5之上模51内置人鑽石磨粒4已 深抵並結合在凹坑12底部之基板1，並與一下模52合模。 模具5設有〇型密封圈53、排氣口 54及樹脂注入口 55。 利用模具5之排氣口 54抽真空，使模腔％内壓力低於 祕心再由樹脂注人口 55注人熱固性樹脂。本實施例所 使用的熱固性樹脂是以STRUERS A/s公司所製的環氧樹脂 15 200906546 (EPOFIX RESIN)及硬化劑（EPOFIX HARDENER)以重 量比25 : 3的比例混合而成。 藉由真空注入（vacuum impregnation)，有利於排除模腔 56内之空氣’以及吸附在鑽石磨粒4和凹坑12表面的氣體 ’如此將使得樹脂的浸潤更為充分，並可降低樹脂與鑽石 磨粒4間形成微觀孔隙的可能性。 脫模完成研磨墊調筋器 如圖9所示地，待熱固性樹脂在常溫下硬化12小時後 進行脫模程序，使硬化的樹脂層6連同與樹脂層6形成永 久性結合之鑽石磨粒4從模具5和基板1表面脫開。接著 將樹脂層6具有鑽石磨粒4之一側浸泡於曱乙酮（methyl ethyl ketone)溶劑中約15分鐘，再以尼龍清洗刷輥 (scrubbing r〇ller)施以水磨刷除沾黏在鑽石磨粒4露出樹脂 層6的部分之膠黏劑31，使鑽石磨粒4之尖點々I或稜線 42露出（參閱圖10)’接著以超音波震盪清洗後，以壓縮 空氣吹乾，即可獲得一由樹脂層6與鑽石磨粒4所組成的 樹脂黏結研磨墊調節器100。 為了使脫模程序更易於進行，當然亦可在模具内面與 基板表面塗覆適當的脫模劑，如聚乙烯醇（p〇lyvinyi alC〇h〇l)、聚四氟乙烯（polytetrafluoroethylene)、聚二甲其石夕 氧烷（dimethyl p〇iysil〇xane)或蠟等。清除膠黏劑的方法亦可 以利用例如，乙醇或二甲苯等之溶劑浸泡。另外，亦可用 聚丙烯不織布清潔用無磨料磨輥，施以水磨刷除去膠黏劑 16 200906546 樹脂黏結研麼墊調節器 圖10和圖11所示分別為依據本發明之前述製程所製得 之樹脂黏結研磨墊調節器100的部分放大示意圖，及部分 放大剖視示意圖。圖10及圖11顯示依據前述實施方式所製 成之樹脂黏結研磨塾調節器刚係由樹脂層6及與樹脂層6 形成永久結合之複數個鑽石磨粒4所構成，而且該等鑽石 磨粒4各自以尖點41或稜線42朝上的狀態座落於一樹脂 錐臺上。樹脂黏結研磨墊調節器、1〇〇的鐵石磨粒4大部 分以朝上之尖點41或稜線42作為切刃。鑽石磨粒4各自 被-浸透至基板i之凹坑12内（再參_ 8)减凹坑12 内的膠黏劑31鄰接之樹脂硬化而形成的樹脂錐臺61所包 覆，故各具有一清除膠黏劑31後的露出高度Μ，且其自樹 脂錐臺61所包覆的部分起有—整體上大致與基板i之凹坑 深度122 (再參閱圖4⑷）接近的凸出高度44，此點亦為各 _粒4的凸出高度44間之差距得以控制在4〇微米以 下的乾圍内之主要原因。而且，各鑽石磨粒4除了包覆在 樹月旨層6本體内的部分外，同時被樹脂錐臺61部分包覆， 使得鑽石磨粒4更不易自樹脂層6脫落。 鼓JiJLii.研磨塾調iii成品表面翻寂 圖12為實施例1所製得的樹脂黏結研磨墊調節器的正 面立體顯微影像照片，放大倍率約為6〇倍。圖12顯示鑽 石磨粒均以尖點或稜線朝上排列，且每顆鑽石磨粒都座落 在-四角錐形的樹脂錐臺上。另夕卜藉由立體顯微鏡在放 大〇倍的情況下，隨機觀察實施例丨製得的樹脂黏結研磨 17 200906546 墊調節器上的1000顆鑽石磨粒，計算尖點或稜線朝上的鑽 石磨粒比例約為89%，具有一致性的切刃形狀。 圖13為利用表面結構測量儀器（MITUTOYO，Surftest SV-400)量測實施例1製得的樹脂黏結研磨墊調節器之鑽 石磨粒凸出高度的測量結果。其測量條件：設定高度方向 的測量範圍為600μηι，解析度為O.l^m，測量長度為5.0inm 。圖13所示，每一個波峰表示一顆鑽石磨粒的凸出高度， 最大波峰與最低波峰的差距，即為鑽石磨粒之凸出高度的 隶大差距’圖13中顯示’所量測的錢石磨粒之間，凸出高 度的最大差距僅25/im，可具有一致性的凸出高度。 實施例2 實施例2的實施步驟與實施例1大致相同，惟膠黏劑 31的充填高度311 (參閱圖6)約為ΐ5〇μηι。 樹脂黏結研磨墊調節器成品表面觀容 圖14為實施例2所製得的樹脂黏結研磨墊調節器的正 面立體顯微影像照片，放大倍率約為60倍。由於實施例2 之膠黏劑的充填高度大於實施例1，使得鑽石磨粒在凹坑中 被膠黏劑包覆的面積較大，故與圖12相較，圖14中實施 例2的樹脂錐臺高度明顯小於實施例1。另外，同樣藉由立 體顯微鏡在放大20倍的情況下，隨機觀察實施例2製得的 樹脂黏結研磨墊調節器上的1000顆鑽石磨粒，計算炎點戍 稜線朝上的鐵石磨粒比例約為8 1 %，仍具有極佳的切刃形 狀一致性。 18 200906546 圖1 5為利用表面結構測*僅γ '量儀益（ΜΙΤύΊΓΟΥΟ，Surftest SV-400)量測實施例2 搵认此 灰侍的树脂黏結研磨墊調節器之鑽 石磨粒凸出高度的測詈社里 、’。果。其測量條件與實施例1相同 。圖15中顯示，所詈泪丨丨沾m τ + 的鑽石磨粒之間，凸出高度的最大 差距僅W/nn，也具有極佳的凸出高度一致性。 實施例3 實施例3的實施步驟與實施例1大致相同，惟，基板 之製作及膠黏劑之充埴太4t 兄填方式與實施例i有所差異，在此即 不再另外繪圖說明。 實施例3是利用v•型溝槽磨削加工方式，形成公模沖 其係在-不錄鋼（SUS42Q )塊表面的環狀區域（内圈半 徑23.6mm，外圈半徑513mm)内在三個方向（彼此夹 角為120度）上，按固定間距123麵，磨削爽角約為 70.52度，且深度約為〇 577mm❾v型溝槽，以形成多數 個直立三角錐體。Such as natural rubber or polyvinyl chloride. The applied pressure may also be selected from a pressure in the range of from 0.1 MPa to 1 MPa. Injection of resin into the mold Referring to Fig. 8, on the mold 5, the mold 51 has a built-in human diamond abrasive grain 4 which has penetrated and bonded to the substrate 1 at the bottom of the pit 12, and is clamped with the lower mold 52. The mold 5 is provided with a 密封-shaped seal ring 53, an exhaust port 54, and a resin injection port 55. The vacuum is extracted by the exhaust port 54 of the mold 5, so that the pressure in the cavity is lower than that of the secret, and the resin is injected into the population. The thermosetting resin used in this example was prepared by mixing epoxy resin 15 200906546 (EPOFIX RESIN) and hardener (EPOFIX HARDENER) manufactured by STRUERS A/S Co., Ltd. at a weight ratio of 25:3. By vacuum impregnation, it is advantageous to exclude the air in the cavity 56 and the gas adsorbed on the surface of the diamond abrasive grains 4 and the pits 12, which will make the resin more wet and reduce the resin and the diamond. The possibility of microscopic pores between the abrasive grains 4. The demolding completion polishing pad ribs are shown in Fig. 9. After the thermosetting resin is hardened at room temperature for 12 hours, a demolding process is performed to make the hardened resin layer 6 together with the diamond abrasive grains 4 which are permanently combined with the resin layer 6. It is detached from the surface of the mold 5 and the substrate 1. Next, the resin layer 6 has one side of the diamond abrasive grains 4 soaked in a methyl ethyl ketone solvent for about 15 minutes, and then a water rubbing brush is applied to the diamond by a scrubbing brush (scrubbing r〇ller). The abrasive grain 4 exposes a portion of the adhesive 31 of the resin layer 6 to expose the sharp point 々I or the ridgeline 42 of the diamond abrasive grain 4 (refer to FIG. 10). Then, after ultrasonic cleaning, it is blown dry by compressed air. A resin bonded abrasive pad conditioner 100 composed of a resin layer 6 and diamond abrasive grains 4 is obtained. In order to make the demolding process easier, it is of course also possible to apply a suitable release agent on the inner surface of the mold and the surface of the substrate, such as polyvinyl alcohol (polyvinyl fluoride), polytetrafluoroethylene, poly Dimethyl p〇iysil〇xane or wax. The method of removing the adhesive can also be soaked using a solvent such as ethanol or xylene. In addition, the non-abrasive grinding roller for cleaning with polypropylene non-woven fabric can be used, and the water-abrasive brush can be used to remove the adhesive. 16 200906546 Resin bonding mortar adjusting device FIG. 10 and FIG. 11 are respectively obtained by the aforementioned process according to the present invention. A partially enlarged schematic view of the resin bonded abrasive pad conditioner 100, and a partially enlarged cross-sectional view. 10 and 11 show that the resin bonded abrasive crucible adjuster produced according to the foregoing embodiment is composed of a resin layer 6 and a plurality of diamond abrasive grains 4 permanently bonded to the resin layer 6, and the diamond abrasive grains are formed. 4 each is seated on a resin frustum with the cusp 41 or the ridge 42 facing upward. The resin bonded abrasive pad conditioner and the 1 inch iron stone abrasive grain 4 are mostly formed with the upward sharp point 41 or the ridge line 42 as a cutting edge. The diamond abrasive grains 4 are each coated with a resin frustum 61 formed by the resin frustum 61 formed by the resin resin 31 which is impregnated into the pits 12 of the substrate i (re-parameter_8) and the adhesive 31 adjacent to the dimple 12 is cured. The exposed height Μ after the adhesive 31 is removed, and from the portion covered by the resin frustum 61, has a convex height 44 which is substantially close to the pit depth 122 of the substrate i (see FIG. 4 (4) again). This point is also the main reason why the difference between the projection heights 44 of the respective granules 4 is controlled within the dry circumference of 4 〇 micrometers or less. Further, each of the diamond abrasive grains 4 is partially covered by the resin frustum 61 in addition to the portion coated in the body of the tree layer 6, so that the diamond abrasive grains 4 are less likely to fall off from the resin layer 6. Drum JiJLii. Grinding iii iii Finished surface smashing Fig. 12 is a frontal, stereoscopic photomicrograph of the resin bonded abrasive pad conditioner prepared in Example 1, with a magnification of about 6 〇. Figure 12 shows that the diamond abrasive grains are arranged with sharp points or ridges facing up, and each diamond abrasive grain is seated on a - square pyramid resin bevel. In addition, by using a stereomicroscope to magnify the magnification, a random observation of the resin bonded abrasive obtained in Example 1717 200906546 1000 diamond abrasive grains on the pad conditioner, and calculating the diamond or abrasive grains with sharp points or ridges upwards The ratio is approximately 89% with a consistent cutting edge shape. Fig. 13 is a graph showing the measurement results of the embossing height of the diamond abrasive grains of the resin bonded polishing pad conditioner obtained by the measurement of the surface structure measuring instrument (MITUTOYO, Surftest SV-400). The measurement conditions are as follows: the measurement range of the height direction is 600 μηι, the resolution is O.l^m, and the measurement length is 5.0 inm. As shown in Fig. 13, each peak indicates the convex height of a diamond abrasive grain, and the difference between the maximum peak and the lowest peak, that is, the large gap of the convex height of the diamond abrasive grain, which is shown in Fig. 13 Between the rock stone particles, the maximum height of the convex height is only 25/im, which can have a consistent convex height. Embodiment 2 The implementation steps of Embodiment 2 are substantially the same as those of Embodiment 1, except that the filling height 311 (see Fig. 6) of the adhesive 31 is about ΐ5〇μηι. Resin bonded abrasive pad conditioner finished product surface view Fig. 14 is a front perspective photomicrograph of the resin bonded polishing pad conditioner prepared in Example 2, with a magnification of about 60 times. Since the filling height of the adhesive of Example 2 is larger than that of Embodiment 1, the area of the diamond abrasive grains covered by the adhesive in the pit is large, so the resin of Example 2 in Fig. 14 is compared with Fig. 12. The frustum height is significantly smaller than in Example 1. In addition, 1000 diamond abrasive grains on the resin bonded abrasive pad conditioner prepared in Example 2 were also randomly observed by a stereo microscope at a magnification of 20 times, and the proportion of the iron-grain abrasive grains on the ridge point of the ridge line was calculated. At 8 1 %, it still has excellent edge shape consistency. 18 200906546 Figure 1 5 is a measurement of the surface roughness of the diamond abrasive grain of the resin bonded abrasive pad conditioner by using the surface structure measurement * only γ ' 仪 S S (Surftest SV-400) measurement Example 2 In the measurement society, '. fruit. The measurement conditions were the same as in Example 1. In Fig. 15, it is shown that the maximum difference in the height of the protrusion between the diamond grains of the tears and m τ + is only W/nn, and also has excellent convex height uniformity. Embodiment 3 The implementation steps of Embodiment 3 are substantially the same as those of Embodiment 1, except that the fabrication of the substrate and the filling of the adhesive are different from those of Embodiment i, and no further drawing will be given here. In the third embodiment, the v•-type groove grinding method is used to form a ring-shaped region (the radius of the inner ring is 23.6 mm and the radius of the outer ring is 513 mm) of the male mold on the surface of the non-recorded steel (SUS42Q) block. In the direction (the angle between each other is 120 degrees), at a fixed spacing of 123 faces, the grinding angle is about 70.52 degrees, and the depth is about 〇577 mm❾v-shaped grooves to form a plurality of upright triangular pyramids.
利用壓印方式，以壓力約A lOMPa，使公模沖在一直 敉為110mm，厚度為1〇111111的聚丙烯製塑膠片上壓印形成 約7，192個未貫穿塑膠片的倒直立三角錐形凹坑，而形成基 板該等凹坑的錐頂角度約為90度，且凹坑深度約為 350μιη。 在本實施例令，是利用點膠方式將膠黏劑充填於該等 凹坑的錐頂，點膠機的針頭内徑為0.26mm，出膠量約為 0.1mm3。點膠機所用的膠黏劑是以3M公司生產的水性壓克 力系感壓型接著劑（型號SP-7533)，與去離子水以重量比2 19 200906546 • i的比例混合，並搜拌均勻後所形成。點膠完成後，同實 施例1的步驟將膠黏劑乾燥，而乾燥後的膠黏劑在凹坑錐 頂的充填高度約為2GG/m。其後實施步驟與實施例1相同 ，而獲得-由樹脂層肖鑽石帛粒所組成的樹脂黏結研磨塾 調節器。‘准，本實施例所用的鑽石磨粒，粒徑範圍小於美 國篩肩30目，大於美國篩網35目，為公司 所生產，型號SDB1100。 表面觀察 圖16為實;^例3所製得的樹脂黏結研磨墊調節器的正 面立體顯微影像照片，放大倍率約為6〇倍。圖16顯示鑽 石磨粒均以尖點或稜線朝上排列，且每顆鑽石磨粒都座落 在-二角錐形的樹脂錐臺上。另夕卜藉由立體顯微鏡在放 大20倍的情況下，隨機觀察實施例3製得的樹脂黏結研磨 墊調節器上的綱顆鑽石磨粒，計算尖點或稜線朝上的鑽 石磨粒比例約為83%。Using the embossing method, the pressure is about A 10 MPa, and the male mold is embossed on a polypropylene plastic sheet having a thickness of 110 mm and a thickness of 1 〇 111111 to form about 7,192 inverted vertical triangles without penetrating the plastic sheet. The pits are formed, and the pit top angle of the pits is about 90 degrees, and the pit depth is about 350 μm. In this embodiment, the adhesive is filled in the top of the cone of the pits by means of dispensing. The inner diameter of the needle of the dispenser is 0.26 mm, and the amount of glue is about 0.1 mm3. The adhesive used in the dispenser is a water-based acrylic pressure-sensitive adhesive (Model SP-7533) produced by 3M Company, mixed with deionized water at a weight ratio of 2 19 200906546 • i, and mixed Formed evenly. After the dispensing was completed, the adhesive was dried in the same manner as in Example 1, and the dried adhesive had a filling height of about 2 GG/m at the top of the pit. Thereafter, the procedure was carried out in the same manner as in Example 1 to obtain a resin-bonded abrasive 调节 adjuster composed of a resin layer. Exactly, the diamond abrasive grains used in this embodiment have a particle size range smaller than that of the US mesh shoulder 30 mesh, which is larger than the US mesh mesh of 35 mesh, and is produced by the company, model SDB1100. Surface Observation Fig. 16 is a true stereoscopic photomicrograph of a resin bonded polishing pad conditioner prepared in Example 3, and the magnification is about 6 times. Figure 16 shows that the diamond abrasive grains are arranged with sharp points or ridges facing upwards, and each diamond abrasive grain is seated on a double-tapered resin frustum. In addition, by observing the magnification of 20 times by a stereomicroscope, the diamond abrasive grains on the resin bonded abrasive pad conditioner prepared in Example 3 were randomly observed, and the proportion of the diamond abrasive grains with the sharp point or the ridge line upward was calculated. It is 83%.
圖Η為利用表面結構測量儀器（ΜΙΤυτ〇γ〇，s她⑻ )!測實施例3製得的樹脂黏結研磨墊調節器之鑽 石磨粒：出高度的測量結果。其測量條件與實施例"目同 ，惟测量長度為7.5mm。圖17中顯示，所量測的鑽石磨粒 之間，凸出高度的最大差距為20μηι。 迖了4本發明之樹脂黏結研磨墊調節器上的 鑽石磨粒因彼此間之凸出古 錯 出阿度差異镟小，故有較高比例之 1可以成為有效調節研磨墊的工作鑽石。其結果， 20 200906546 不僅調節器的切削率不易鈍化，可以維持長時間的晶圓移 除率穩定性’而且因為研磨墊調節器上沒有太凸出之鑽石 磨粒所以研磨塾不會被過度修除，使用壽命可以延長， 進而節省非製程時間。 其次，本發明之樹脂黏結研磨墊調節器，因為大部分 工作鑽石的切刀形狀是銳利的尖點或稜線，且凸出高度差 異微小，故可輕易地在研磨墊表面，既密且規則地刻劃出 幵y狀與^未淺較為一致的溝槽，從而使得研磨塾表面凸點的 大小與形貌整齊一致’定義出一密度高且強韌之表面凸點 結構。其結果乃得以進一步提昇晶圓的材料移除率及移除 率均勻性，同時降低缺陷率。 另外’本發明之樹脂黏結研磨墊調節器利用樹脂錐臺 的包覆，可在不犧牲鑽石磨粒的凸出高度下形成較大的黏 結面積，故而具有較高的黏結強度。且，本發明之樹脂黏 結研磨墊調節器上工作鑽石的數目較多，台的下施力會 被平均分擔，不會有單獨的一顆工作鑽石承受過高的動態 負荷’故可有效地避免鑽石磨粒脫落。 此外，本發明之樹脂黏結研磨墊調節器的鑽石磨粒具 有較大的凸出高度，因此，在研磨墊表面切割溝槽時，切 屑與研磨液有較大的流動空間，這將使排屑容易進行，而 且研磨液的流動與分散都變得較為順暢。同時，鑽石磨粒 的凸出尚度較大將使得樹脂黏結研磨墊調節器之樹脂層在 調節研磨墊的過程中不易接觸到研磨墊，故可避免磨耗。 惟以上所述者，僅為本發明之較佳實施例而已，當不 21 200906546 能以此限定本發明實施之範圍，即大凡依本發明申請專利 範圍及發明說明内容所作之簡單的等效變化與修飾，皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1為傳統的隨機排列讚石磨粒指向之研磨墊調節 器的剖視示意圖； 圖2(a)〜(d)是說明四種常見的市售立方八面體合成鑽石 結晶形態之示意圖； 圖3是一鑽石磨粒以不同形狀的切刃在研磨墊表面刻 劃溝槽的示意圖； 圖4(a)是一說明本發明樹脂黏結研磨墊調節器之製造方 法的實施例1，其製程步驟中所用的公模沖之示意圖； 圖4(b)是-沿4⑷中B_B直線所取的剖視示意圖； 圖4⑷是-㈣該實施们的實施步财表面形成有複 數個直立四角錐形凹坑之基板的示意圖；The figure is a surface structure measuring instrument (ΜΙΤυτ〇γ〇, s she (8))! The diamond-bonded abrasive pad of the resin bonded abrasive pad conditioner prepared in Example 3 was measured: the height measurement result. The measurement conditions were the same as in the example, except that the measurement length was 7.5 mm. As shown in Fig. 17, the maximum difference in the height of the projection between the measured diamond abrasive grains is 20 μm. The diamond abrasive grains on the resin-bonded polishing pad adjuster of the present invention are different from each other because of the difference between the two, so that a higher proportion of one can be a working diamond for effectively adjusting the polishing pad. As a result, 20 200906546 not only the cutting rate of the regulator is not easily passivated, but also maintains the stability of the wafer removal rate for a long time. Moreover, since there is no protruding diamond abrasive grain on the polishing pad adjuster, the grinding burr is not over-repaired. In addition, the service life can be extended, thereby saving non-process time. Secondly, the resin bonded abrasive pad adjuster of the present invention can be easily and regularly adhered to the surface of the polishing pad because the shape of the cutter of most working diamonds is sharp sharp points or ridge lines and the difference in protrusion height is small. The grooves which are more consistent with the 幵 y shape and the shallower surface are scribed, so that the size and the shape of the surface of the polished enamel are aligned. A high-density and tough surface bump structure is defined. The result is a further increase in wafer material removal and removal rate uniformity while reducing defect rates. Further, the resin-bonded polishing pad conditioner of the present invention utilizes the coating of the resin frustum to form a large bonding area without sacrificing the protruding height of the diamond abrasive grains, thereby having a high bonding strength. Moreover, the number of working diamonds on the resin bonded polishing pad adjuster of the present invention is large, and the lower force applied to the table is evenly shared, and no single working diamond is subjected to excessive dynamic load, so that it can be effectively avoided. Diamond abrasive particles fall off. In addition, the diamond abrasive grain of the resin bonded abrasive pad conditioner of the present invention has a large protruding height, and therefore, when the groove is cut on the surface of the polishing pad, the chip and the polishing liquid have a large flow space, which will cause chip discharge. It is easy to carry out, and the flow and dispersion of the slurry become smoother. At the same time, the greater the convexity of the diamond abrasive grains makes the resin layer of the resin bonding polishing pad adjuster not easy to contact the polishing pad during the adjustment of the polishing pad, so wear can be avoided. However, the above is only the preferred embodiment of the present invention, and the scope of the present invention is limited to the extent that the invention is based on the scope of the invention and the simple equivalent changes made by the invention. And modifications are still within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic cross-sectional view of a conventional randomly arranged abrasive pad pointing abrasive pad conditioner; Figures 2(a) to (d) illustrate four common commercially available cubic octahedrons. Figure 3 is a schematic view of a diamond abrasive grain with a different shape of the cutting edge on the surface of the polishing pad; Figure 4 (a) is a manufacturing method of the resin bonded polishing pad adjuster of the present invention Embodiment 1, a schematic diagram of a male die used in the process step; FIG. 4(b) is a cross-sectional view taken along line B_B of 4(4); FIG. 4(4) is - (4) The implementation of the step surface is formed by the embodiment Schematic diagram of a plurality of substrates of upright quadrangular pyramids;
圖4⑷是-沿圖4⑷中D_D直線所取的剖視示意圖； 圖5是-說明該實施例i的實施步驟中將暫時結合用 膠黏劑充填至凹坑底部的操作方式示意圖； ^是-說明該實施例i的實施步驟中，鑽石磨粒配 置在基板表面的倒錐形凹坑之剖視示意圖； 圖7是-說明該實施例1的實施步驟中，以 料施壓於暫時結合在基板表面倒 操作示意圖； 坑内之鑽石磨粒的Figure 4 (4) is a schematic cross-sectional view taken along the line D_D in Figure 4 (4); Figure 5 is a schematic view showing the operation mode of temporarily filling the adhesive to the bottom of the pit in the implementation step of the embodiment i; BRIEF DESCRIPTION OF THE DRAWINGS In the implementation step of the embodiment i, a schematic cross-sectional view of the inverted abrasive pits of the diamond abrasive grains disposed on the surface of the substrate; FIG. 7 is a view illustrating the implementation of the first embodiment, in which the material is pressed to temporarily bond Schematic diagram of the reverse operation of the substrate surface; diamond abrasive grains in the pit
是—說㈣實關1的實施步㈣，將基板置入 22 200906546 一模具内以進行樹脂注入程序的示意圖； /圖9是一說明該實施例1的實施步驟中，樹脂層硬化 後與模具和基板分離的過程之示意圖； 圖ίο是-本發明樹脂黏結研磨墊調節器之實施例 局部放大示意圖； ’ 圖11是一該實施例1的局部放大剖視示意圖； 圖12是一該實施例丨的顯微影像照片； 圖13是一以表面結構測量儀器測量該實施例】的局部 區域所得的鑽石磨粒凸出高度量測結果； 圖14是一本發明樹脂黏結研磨墊調節器之實施例2的 顯微影像照片； 圖15是一以表面結構測量儀器測量該實施例2的局部 區域所得的鑽石磨粒凸出高度量測結果； 圖16是一本發明樹脂黏結研磨墊調節器之實施例3的 顯微影像照片；Yes - say (d) the implementation step (4) of the actual off 1 , the substrate is placed in 22 200906546 a mold for the resin injection process; / Figure 9 is a description of the implementation of the embodiment 1 after the resin layer is hardened and the mold BRIEF DESCRIPTION OF THE DRAWINGS FIG. 11 is a partially enlarged schematic cross-sectional view showing an embodiment of a resin bonded abrasive pad conditioner of the present invention; FIG. 11 is a partially enlarged cross-sectional view of the first embodiment; FIG. FIG. 13 is a measurement result of the diamond abrasive grain protrusion height obtained by measuring the local region of the embodiment by the surface structure measuring instrument; FIG. 14 is an implementation of the resin bonded polishing pad conditioner of the present invention. Fig. 15 is a photomicrograph of a diamond abrasive grain obtained by measuring a partial region of the embodiment 2 by a surface structure measuring instrument; Fig. 16 is a resin bonded abrasive pad conditioner of the present invention; Photomicrograph of Example 3;
圖Π是一以表面結構測量儀器測量該實施例3的局部 區域所得的鑽石磨粒凸出高度量測結果。 23 200906546 【主要元件符號說明】 1 ......... ••基板 43•… 路出南度 11........ ••塑膠片 44·_··. 凸出南度 12........ ••凹坑 5…… •…模具 121…… _ •錐頂 51 ·.·· …·上模 122…… ••凹坑深度 52•…. •…下模 123…… ••凹坑寬度 53 ··.·. ····〇型密封圈 100…… ••樹脂黏結研磨墊 54…·· …·排氣口 調節器 55 ···.· 树月a注入口 2 ......... ••公模沖 56·...· •…模腔 21........ ••不銹鋼板 6…… •…樹脂層 211…… _ -壓印面（表面） 61 •…樹脂錐臺 22........ .•四角錐體 80··..· •…下施力 221…… ••頂角 81 •…研磨墊 31........ ••膠黏劑 811 ··· …·溝槽 311…… ••充填高度 812… …·溝槽 32........ ••網版 9…… •…研磨墊調節器 321…… ••圓形穿孔 91 ·.··· …·鑽石磨粒 33........ ••網印平台 911… …·面 34........ ••刮刀 912… .···面 35........ ••破膝片 913… ----大點 4 ........ ••鑽石磨粒 914… •…稜線 41........ ••尖點 92…… •…結合劑層 42........ ••稜線 93 ··.·. •…基材 24 200906546 94.........凸出高度 25Fig. Π is a measurement result of the diamond abrasive grain bulging height obtained by measuring the partial region of this Example 3 by a surface structure measuring instrument. 23 200906546 [Explanation of main component symbols] 1 ......... •• Substrate 43•... Road out of South 11........ ••Plastic sheet 44·_··. Degree 12........ ••Pit 5...•...Mold 121... _ •Cone top 51 ·.····Upper mold 122... ••Pit depth 52•.... •... Lower mold 123... ••Pitch width 53 ········〇-type seal ring 100... ••Resin bonded polishing pad 54...····Exhaust port regulator 55 ···.· Shuyue a injection port 2 ......... ••Male mold punch 56·...· •... cavity 21........ ••Stainless steel plate 6...•...resin layer 211...... _ - embossed surface (surface) 61 •... resin frustum 22........ • quadrilateral cone 80··..·......lower force 221... ••top angle 81 • ...grinding pad 31........ ••adhesive 811 ·····groove 311... ••filling height 812...··groove 32........ •• Version 9... •...Gray pad adjuster 321... ••Circular perforation 91 ·······Diamond abrasive grain 33........ •• Screen printing platform 911... face 34. ...... ••Scraper 912....···Face 35........•Broken Knee 913... ----Large point 4........ ••Diamond Abrasive 914... ... ridgeline 41........ •• pointed point 92... •...bonding agent layer 42........ •• ridgeline 93 ····.....substrate 24 200906546 94.. ....... protruding height 25