200902209 九、發明說明： 發明領域 本發明係有關於一種沿著形成於半導體晶圓等之被加 5 工物之分割預定線照射雷射光線，並且沿著分割預定線於 晶圓之内部形成變質層之雷射加工方法。 【先前技術】 發明背景 在半導體裝置之晶片製造程序中’在大略圓盤狀之半 10 導體晶圓之表面上’沿著配列成格子狀之分割預定線區劃 出複數之矩形領域’並且在該等矩形領域形成1C或LSI等電 子電路、及稱為MEMS(Micro Electro Mechanical System)之 微小電機元件後，沿著分割預定線切斷晶圓，將矩形領域 當作半導體晶片。 15 切斷晶圓之手段一般是使用將高速旋轉之薄形圓盤狀 刀片切成晶圓之切割法。該切割法具有可得到平坦且銳利 之切斷面等之優點，但晶片間之分割預定線的寬度需要等 於或大於使用之刀片之厚度（主要約10〜30/zm)的尺寸，因 此切斷費用較高’且由盡可能在每一片晶圓多得到晶片個 20 數，以提高生產性之觀點來看極為不利。 另一方面’近年來也採用雷射法，沿著分割預定線， 於晶圓内部照射透過性雷射光線，形成物理強度降低之變 質層，接著對晶圓施予外力，藉此沿著分割預定線割斷晶 圓，得到單片化之晶片（參照專利文獻1)。該雷射法中，切 5 200902209 斷費：相較於切割法非常少，在生產面上較為有利。 、而，將晶圓切割成單片之晶片時，為了要防止晶片 刀散^並且保護夾頭台，預先在晶圓裏面貼著稱為切割帶 之黏著τ。又，在切斷程序割斷晶圓，該切斷程序係於該 5 之外周貼著金屬框，藉此容脸制晶®，且在此狀 心下在進行前述雷射法之雷射光線照射後施加外力之。 【專利文獻1】曰本專利公開公報特開平〗〇_3〇542〇 【鸯^明内容】 發明概要 10 15 使雷射光線照射於貼著於切割膠帶之晶圓之分割預定 線之装置例如有雷射加工裝置，該雷射加工裝置具有：保 持μ圓之保持機構、將雷射光線照射於晶圓之雷射光線照 射機構、及使保持機構與雷射光線照 動機構。將晶圓保持於該雷射加工裝置之保= 且藉由雷射光線照射機構使雷射光線照射於晶圓之分割預 疋線，並且使保持機構與雷射光線照射機構相對移動，藉 此於晶圓内部形成變質層。 射光線照射到晶圓邊緣時 宙由 ^ , ......〜一一〜，十…，叫钓移勤機構 "的控制誤差，光線會腳到晶圓之邊緣稍微 外側之㈣帶或保持機構上。#雷射光線照㈣切割帶 保持機構時’會因為雷射光線之能量而發熱，並且照射: 雷射光線之部分相孔。如此，當於切割帶之分割預定線 延長線上形成多數孔時，在切斷程料力無法 曰 圓，恐有騎不良之虞。特別是歸石晶圓等之 20 200902209 或單機能之丰導辦开, 千V體兀件之個別半導體（discrete 隨職-㈣之小晶片尺寸之裳置中，孔為細小之針眼 狀’施加外力時，各孔會連結，可能在孔之位置切斷切割 帶，無法割斷。 5目此，本發明之目的在於提供-種可防止雷射光線照 射於晶圓外側，並且切割帶或保持機構不會受到雷射光線 之和彳進行雷射加工之晶圓之雷射加工方法。 本發明之雷射加工方法係將板狀被加工物保持於保持 機構並露出該板狀被加工物之一面，一面使與該保持機構 1〇對向配置之雷射光線照射機構與該保持機構相對地平行移 動，-邊自該雷射光線照射機構沿著形成於被加工物之分 割預定線照射雷射光線時，將具有與被加工物呈大略相同 形狀且為大略相同尺寸之開口部之雷射光線遮蔽構件，以 圍繞被加工物之狀態配設於前述被加工物之周圍。 15 根據本發明，被加工物保持於保持機構時，具有與被 加工物為大略相同形狀、且為大略相同尺寸之開口部之雷 射光線遮光構件配設成圍繞被加工物之狀態。由於該雷射 光線遮光構件遮住雷射光線，因此被切割帶或保持機構之 雷射光線遮光構件所覆蓋之領域不會照射到雷射光線。藉 2〇此’即使因為移動機構之機械式的控制誤差而雷射光線照 射到被加工物之邊緣之稍微外侧，切割帶或保持機構也不 會受到雷射光線的影響，不會開孔。結果，在利用切割帶 於照射雷射光線後進行切斷程序時，可將外力確實地僂遠 到被加工物，抑制輯不良的發生。 貧地傳達 7 200902209 又本發明在雷射光線遮光構件之開口部之内緣 被加工物之外緣部之間所形成之間隙的距離宜設定; O.hnm以内。藉由將間隙設定微細到。臟，可抑制照 射光線對切割帶或保持機構的影響。藉此，可不 射光線對切割帶或料機構的影響，將雷射域照射^ 加工物上。 沈 射光==!射光線遮光構件可舉例之形態為在雷 10 15 :=::且具有—高二 側、㈣纟由該外側緣部之上端朝内側延伸之 部内側伸出之長度亦可與覆蓋被加工物之外緣的長声、ΐ 者與被加工物之外緣-致之長度，該等情況下，可;實= 卜緣往外侧移出之階段，雷射光線照射 到田射祕遮切件，或者照射到洲帶或 即使是被加工物之外緣更外側，只要如上所述為距 0.1mm之距離，則^合成a Γ'^ ^ 會又到运射光線的影響。如此，萨將 雷射光線遮光構件作朗形，可確 " 間有充分的距離，因此可# 、17，、外側緣部之 光構件。㈣， 物細到雷射光線遮 。Β㈣雷射光線遮光構 物之周圍，並可抑制被加，與雷 導致被加工物的損害。 ㈣域件之接觸 發明之效果 §己設在圍繞被加 根據本發明’ II將雷射光線遮光構件 20 200902209 - 工物之狀態下’可防止雷射光線往被加工物外之切割帶或 保持機構照射’因此可在切斷程序確實地將外力傳送到外 β ’達到抑制割斷不良之發生的效果。 【>| 5較佳實施例之詳細說明 以下’參照圖式說明本發明之一實施形態。 Π]半導體晶圓 第1圖之標號1係顯示藉由本發明之一實施形態之雷射 / 加工方法照射光線之圓盤狀半導體晶圓。該晶圓丨之表面藉 10由格子狀分割預定線2區化成複數矩形之半導體晶片（裝 置）3，該等半導體晶片3之表面形成有IC*LSI等未圖示之 電子電路。晶1B1之周面之預定處形成顯示半導體之結晶方 位之V形切口（缺口）4。 晶圓1藉由本發明之—實施形態之雷射加工方法，沿著 15分割預定線2於内部照射雷射光線，形成變質層，並割斷該 變質層形成單片之各個半導體晶片3。—實施形態之雷射加 ( 王方適合使用第2圖所示之雷射加工裝置實施。 - [2]使用雷射加工農置形成變質層 上述晶IB 1係將形成有半導體晶片3之表面側向上貼著 20於如第3圖所示之周圍貼著有切割框架61之切割扣上且 在晶圓1之周圍被雷射光線遮光構件％之狀態下保持於具 有雷射加工裝置1〇之水平的夾頭台(省略圖示)。晶圓m雷 射光線遮光構件70(以下，略稱遮光構件）貼著於切割帶^ 者與本發明有關，於後詳述。 9 200902209 夾頭台之上方配設有雷射光線垂直向下照射之雷射頭 21 13夾頭台設置於XY移動台13，且XY移動台13設置於雷 射加工裝置10之基台12上且可朝水平之X軸方向及γ軸方 向自由移動，藉由該XY移動台13朝X軸方向或Y軸方向移 5 動，由雷射頭21照射雷射光線到分割預定線2。 XY移動台13係由設置於基台12且朝X軸方向自由移動 之X軸基部30、及設置於該X軸基部30上且可朝γ轴方向自 由移動之Y轴基部40組合所構成。X軸基部3〇可自由移動地 女農於朝固定在基台12上之X軸方向延伸之一對平行導軌 10 31，藉由馬達32使滾珠螺桿33作動之X軸驅動機構34朝乂軸 方向移動。另一方面，γ轴基部4〇可自由滑動地安裝於朝固 疋於X軸基部30上之Y軸方向延伸之一對平行導執々I，莽由 馬達42使滾珠螺桿43作動之γ軸驅動機構料朝丫軸方向移 動。 失頭台係藉由真空作用吸著保持作業件（此時為晶圓 之-般周知之真空夾頭式者，且可自由旋轉地受支持於Y 軸基部40上，藉由未圖示之旋轉驅動機構使之朝單向〆、 向旋轉。接著夾頭台隨著X軸基部3〇及¥軸基部D或雙 朝X軸方向或γ軸方向移動。 動而 藉由使夾頭台旋轉，朝其中一方向延伸之各八生 線2朝X軸方向平行，並且朝與此直交之另—方向^預义 分割預定線2朝Y軸方向平行，在狀態下，可藉^ ^之各 而固定保持於夾頭台上之晶圓1。 '頭《彳τ止 然後保持該狀態，使χγ移動台13之、基部㈣Y轴 200902209 基部40適當地移動，並且由雷射頭21照射之雷射光線沿著 分割預定線2由表面側照射於晶圓1之内部。本實施形態中， 於晶圓1之内部設定雷射光線之焦點位置，於該焦點位置形 成變質層。 5 雷射頭21設置於朝夾頭台上在Y軸方向延伸之殼體22 之鈾端。該殼體22沿著垂直方向（z軸方向）自由上下移動地 汉置於立設在基台11之上面之柱體14，並藉由收容於柱體 14内且未圖示之上下驅動機構而可上下移動。 YAG雷射發振器、或者Υν〇4雷射發振器構成脈衝雷射 10發振器連接於雷射頭21，且由該雷射發振器發出之雷射自 雷射頭21垂直向下照射成為雷射光線。雷射發振器所發出 之雷射往晶圓内部之透過性良好且確實地形成變質層，成 為更容易割斷之種類，例如輸出1〜5W，波長可因應於被加 工物之光透過性而選定。 來自雷射頭21之雷射光線之照射位置係根據經由臂2 3 女裝於威體22之一側方之顯微鏡24之拍攝而控制。，顯微BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of irradiating a laser beam along a predetermined dividing line of a workpiece to be formed on a semiconductor wafer or the like, and forming a deterioration in the interior of the wafer along a dividing line. Layer laser processing method. [Prior Art] In the wafer fabrication process of a semiconductor device, 'on a surface of a substantially disk-shaped half-conductor wafer', a plurality of rectangular regions are divided along a predetermined line arranged in a lattice shape and are When an electronic circuit such as 1C or LSI or a micro motor element called a MEMS (Micro Electro Mechanical System) is formed in the rectangular region, the wafer is cut along the planned dividing line, and the rectangular region is used as a semiconductor wafer. 15 The method of cutting the wafer is generally a cutting method in which a thin disk-shaped blade that rotates at a high speed is cut into a wafer. This cutting method has the advantage that a flat and sharp cut surface or the like can be obtained, but the width of the dividing line between the wafers needs to be equal to or larger than the thickness of the blade to be used (mainly about 10 to 30/zm), and thus the cutting is performed. The cost is higher' and it is extremely disadvantageous from the viewpoint of increasing the productivity of the wafers as much as possible in each wafer. On the other hand, in recent years, a laser method has been used to illuminate a transparent laser beam inside a wafer along a predetermined dividing line to form an altered layer having a reduced physical strength, and then an external force is applied to the wafer, thereby dividing the film. The wafer is cut by a predetermined line to obtain a singulated wafer (refer to Patent Document 1). In the laser method, cut 5 200902209, the cost is very small compared to the cutting method, which is advantageous on the production side. Further, when the wafer is cut into a single wafer, in order to prevent the wafer from being scattered and to protect the chuck, an adhesive τ called a dicing tape is attached to the wafer in advance. Further, the wafer is cut by the cutting process, and the cutting process is attached to the metal frame at the periphery of the 5, thereby accommodating the face, and the laser light of the laser method is performed under the center of the core. After applying external force. [Patent Document 1] Japanese Laid-Open Patent Publication No. _3〇542〇 [鸯^明Content] Summary of Invention 10 15 A device for irradiating laser light onto a dividing line of a wafer attached to a dicing tape, for example There is a laser processing apparatus having a holding mechanism for holding a μ circle, a laser beam irradiation mechanism for irradiating laser light onto the wafer, and a holding mechanism and a laser beam illuminating mechanism. Holding the wafer in the laser processing apparatus and irradiating the laser beam to the split pre-twist line of the wafer by the laser beam irradiation mechanism, and moving the holding mechanism relative to the laser beam irradiation mechanism, thereby A metamorphic layer is formed inside the wafer. When the light hits the edge of the wafer, the control angle of the ^, ......~1~, ten..., called the fishing station", the light will be slightly outside the edge of the wafer (4) Or keep the organization. #雷射光照(四)Cutting tape When holding the mechanism, it will heat up due to the energy of the laser light, and it will illuminate: part of the phase hole of the laser beam. Thus, when a plurality of holes are formed on the extension line of the dividing line of the dicing tape, the cutting force cannot be rounded during the cutting process, and there is a fear that the riding is poor. In particular, the returning stone wafers, etc. 20 200902209 or the single function of the Feng guide, the individual semiconductors of the thousands of V body components (discrete with the small-size wafer size of the skirt, the hole is a small needle-like shape) In the case of external force, the holes are connected, and the dicing tape may be cut at the position of the hole, and the dicing tape may not be cut. 5 Therefore, the object of the present invention is to provide a laser beam that prevents the laser light from being irradiated to the outside of the wafer, and the dicing tape or the holding mechanism A laser processing method for a laser that is not subjected to laser processing by the sum of laser rays. The laser processing method of the present invention holds a plate-like workpiece in a holding mechanism and exposes one of the plate-shaped workpieces. And the laser beam illuminating mechanism disposed opposite to the holding mechanism 1 相对 is moved in parallel with the holding mechanism, and the laser beam is irradiated from the laser beam irradiation mechanism along a predetermined line formed on the workpiece. In the case of light, a laser beam shielding member having an opening portion having substantially the same shape as the workpiece and having substantially the same size is disposed around the workpiece in a state of surrounding the workpiece. According to the present invention, when the workpiece is held by the holding mechanism, the laser light shielding member having the opening shape which is substantially the same shape as the workpiece and which is substantially the same size is disposed so as to surround the workpiece. The laser light-shielding member blocks the laser light, so that the area covered by the laser light-shielding member of the cutting tape or the holding mechanism does not illuminate the laser light. This is because of the mechanical control of the moving mechanism. The laser light is incident on the outer side of the edge of the workpiece, and the cutting tape or the holding mechanism is not affected by the laser light, and the hole is not opened. As a result, the cutting light is used to illuminate the laser beam. When the program is interrupted, the external force can be surely removed to the workpiece, and the occurrence of the defect can be suppressed. The poor land transmission 7 200902209 Further, the present invention is at the outer edge of the workpiece at the inner edge of the opening portion of the laser light shielding member. The distance between the gaps formed between them should be set within O.hnm. By setting the gap to be fine, it is possible to suppress the influence of the irradiation light on the dicing tape or the holding mechanism. Thereby, the influence of the light on the dicing tape or the material mechanism can be irradiated, and the laser field is irradiated onto the processed object. The sputter light ==! The light ray blocking member can be exemplified by the shape of the Ray 10 15 :=:: and has - The length of the upper side of the upper side and the fourth side of the outer side of the outer side of the outer side of the workpiece may be the length of the outer edge of the outer edge of the workpiece, and the outer edge of the workpiece and the outer edge of the workpiece. In these cases, it can be; the actual direction of the edge is removed from the outer edge, and the laser beam is irradiated to the field to cover the piece, or to the outer zone or even the outer edge of the workpiece, as described above. For a distance of 0.1mm, ^com a Γ'^ ^ will be affected by the transmitted light. So, Sa will make the laser light-shielding member a lang shape, and it is true that there is a sufficient distance between them. , 17, the light member of the outer edge. (4), the object is fine to the laser light. Β (4) The surroundings of the laser light-shielding structure can suppress the addition and the damage caused by the lightning. (4) The effect of the invention of the contact of the domain member § has been set around the dicing tape or the holding of the laser light shielding member 20 200902209 - the object in the state of the invention The mechanism illumination 'so that the external force can be reliably transmitted to the outer β ' in the cutting program to achieve the effect of suppressing the occurrence of the cutting failure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of the present invention will be described with reference to the drawings.半导体] Semiconductor Wafer Figure 1 of the first drawing shows a disk-shaped semiconductor wafer which is irradiated with light by a laser/machining method according to an embodiment of the present invention. The surface of the wafer wafer is formed into a plurality of rectangular semiconductor wafers (devices) by a grid-like division line 2, and an electronic circuit (not shown) such as IC*LSI is formed on the surface of the wafers 3. A predetermined portion of the peripheral surface of the crystal 1B1 forms a V-shaped slit (notch) 4 which exhibits a crystal orientation of the semiconductor. The wafer 1 is irradiated with laser light internally along a fifteen-divided predetermined line 2 by a laser processing method according to an embodiment of the present invention to form a modified layer, and the modified layer is cut to form individual semiconductor wafers 3 of a single piece. - Laser addition of the embodiment (Wang Fang is suitable to use the laser processing apparatus shown in Fig. 2. - [2] Using a laser processing to form a metamorphic layer. The above crystal IB 1 system will be formed with the surface of the semiconductor wafer 3. The side surface 20 is held on the cutting buckle which is attached to the cutting frame 61 as shown in FIG. 3 and is held by the laser processing apparatus 1 in the state of being surrounded by the laser light shielding member %. The horizontal chuck table (not shown). The wafer m laser light shielding member 70 (hereinafter, abbreviated as a light shielding member) is attached to the dicing tape and is related to the present invention, and will be described later in detail. 9 200902209 Chuck Above the stage, a laser head 21 with a laser beam vertically downward is disposed. The chuck table is disposed on the XY moving table 13, and the XY moving table 13 is disposed on the base 12 of the laser processing apparatus 10 and can be horizontally The X-axis direction and the γ-axis direction are freely moved, and the XY moving table 13 is moved in the X-axis direction or the Y-axis direction by 5, and the laser beam 11 is irradiated with the laser beam to the division planned line 2. The XY moving table 13 is attached. An X-axis base 30 that is disposed on the base 12 and that is free to move in the X-axis direction, and is disposed on the X-axis base A Y-axis base 40 that is freely movable in the γ-axis direction is formed by a combination of 30. The X-axis base 3 is freely movable, and the pair of parallel guides 10 31 extend in the X-axis direction fixed to the base 12. The X-axis drive mechanism 34 that moves the ball screw 33 by the motor 32 moves in the z-axis direction. On the other hand, the γ-axis base 4〇 is slidably attached to the Y-axis direction that is fixed to the X-axis base 30. One pair of parallel guides 々I, γ the γ-axis drive mechanism of the ball screw 43 actuated by the motor 42 moves toward the y-axis direction. The lost head is sucked and held by the vacuum (the wafer at this time) It is generally known as a vacuum chuck type, and is rotatably supported by the Y-axis base 40, and is rotated in a one-way direction by a rotary drive mechanism (not shown). The X-axis base 3〇 and the ¥axis base D or both move in the X-axis direction or the γ-axis direction. By rotating the chuck table, the respective octagonal lines 2 extending in one direction are parallel to the X-axis direction, and In the other direction, the direction is directly parallel to the Y-axis direction, in the state Next, the wafer 1 held on the chuck table can be fixed by the ^ ^. The head "彳τ 止 止 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持The laser beam irradiated by the laser head 21 is irradiated onto the inside of the wafer 1 from the surface side along the dividing line 2. In the present embodiment, the focus position of the laser beam is set inside the wafer 1 at the focus position. The metamorphic layer is formed. 5 The laser head 21 is disposed at the uranium end of the casing 22 extending in the Y-axis direction toward the chuck table. The casing 22 is freely moved up and down along the vertical direction (z-axis direction). The column 14 provided on the upper surface of the base 11 is vertically movable by being housed in the column 14 and not shown in the upper and lower drive mechanisms. The YAG laser oscillator or the Υν〇4 laser oscillator constitutes a pulsed laser 10 oscillator connected to the laser head 21, and the laser emitted by the laser oscillator is perpendicular to the laser head 21 The lower illumination becomes a laser light. The laser emitted from the laser oscillator has good permeability to the inside of the wafer and reliably forms a deteriorated layer, which is a type that is easier to cut. For example, the output is 1 to 5 W, and the wavelength can be dependent on the light transmittance of the workpiece. Selected. The illumination position of the laser light from the laser head 21 is controlled according to the photographing of the microscope 24 on the side of one of the armatures 22 by the arm. Microscopy
鏡24隨著殼體22之上下移動，與雷射頭21同時上下移動 調整焦點。保持於夾頭台21之晶圓丨在雷射光線照射之前， 移動到顯微鏡24之下方，藉由顯微鏡24拍攝表面之圖案影 20像。然後經拍攝之晶圓表面之圖案影像輸入未圖示之影像 處理機構，並藉由該影像處理機構檢測出應切斷=預 定線2。進而，根據藉由該影像處理機構檢測出之八割預」 線2之資料’控制夾頭台及ΧΥ移動台13之移動動 雷射頭21之雷射光線照射之動作。爯去，#，二 丹有右使用紅外線顯 11 200902209 微鏡作為顯微鏡24，亦可使晶圓1露出裏面側保持於夾頭台 上，並在此狀態下藉由顯微鏡24由晶圓1之裏面透過内部拍 攝表面之圖案影像，辨識分割預定線2。藉此，亦可由晶圓 1之裏面側照射雷射光線。 5 上述雷射加工裝置1〇中，係藉由使X軸基部3〇朝X軸方 向移動，並且由雷射頭21照射雷射光線於分割預定線2,藉 此沿著與X轴方向平行之分割預定線2，於晶圓内部形成變 質層。又，藉由使Y軸基部40朝γ軸方向移動，並且由雷射 頭21照射雷射光線於分割預定線2，藉此沿著與¥軸方向平 10行之分割預定線2,於晶圓内部形成變質層。照射雷射光線 牯，為了使焦點位置與晶圓内部對焦形成變質層使殼體 22上下移動’調整雷射頭21之上下位置，並且將雷射光線 之焦點位置設定為晶圓内部之目的高度。 如上所述，沿著與X軸方向及γ軸方向平行之全部的分 15刎預定線2照射雷射光，於晶圓内部形成變質層。形成變質 層後之晶圓1透過切割帶6 2及切割框架6丨，設置於切斷裝置 等之外力賦與裝置，並藉由對切割帶62賦與拉力等之外 力，割斷分割預定線2，單片化成各個半導體晶片3。 [3]晶圓與遮光構件貼著於切割帶 ί〇 在保持於雷射加工裝置丨〇前，晶圓1係如第3圖所示， 裏面侧貼著於在周圍貼有切割框架61之切割帶62。其次， 在晶圓1之周圍’具有與晶圓丨為大略同形狀之圓形且為大 略尺寸之開口部71之環狀遮光構件7 〇係在圍繞晶圓1之周 圍之狀態下貼著於切割帶6 2。晶圓1與遮光構件7 0貼著於切 12 200902209 . 割帶62時，如第5圖所示，形成於遮光構件70之開口部71之 内緣部72、與晶圓1之外緣部13之間之間隙w2之距離設定 在0.1mm以内。要達成此設定，只要將遮域件冗之内徑 設定較晶圓1之外徑大〇.2mm以内之範圍，並在遮光構件乃 5貼著於切割帶62時，確保間隙W2在遮光構件7〇之内緣部” 與晶圓1之外緣部la之間涵括全周即可。如此，晶圓i貼著 於切割帶62，並且保持在具有雷射加工裝置1〇之水平夹頭 台上。又，遮光構件7〇之經方向的寬度為3〜5咖左右。又， : 遮紐㈣之厚度从^左^該絲構件观要求可 1〇遮住雷射光線L，並且即使將雷射光線L之熱吸收到某種程 度也不熔融者。由該觀點來看，遮光構件7〇之材質適合使 用銘或不鏽鋼。又，遮光構件7〇在照射雷射光線[時，宜在 表面進行粗面加工，以使照射之雷射光線擴散。 根據本實施形態，由於在圍繞晶圓丨之周圍之狀態下配 15 δ又遮光構件70 ’因此雷射光線L不會照射到切割帶62或夾頭 台之被遮光構件70覆蓋之領域。以往，由於χ軸驅動機構34 % 或Υ軸驅動機構44等之機械性的控制誤差，雷射光線L會往 晶圓1之外緣部la之稍微外側照射，如第4圖所示，於切割 帶62形成孔63。然而，本實施形態中，如第5圖所示，即使 20雷射光線1^往晶圓1之外緣部la之稍微外側照射，遮光構件 70也會遮住雷射光線L，位於其下方之切割帶62或夾頭台不 會受影響，不會於切割帶62開孔。其結果，在利用切割帶 62於雷射光線l照射後，進行切斷程序時，可將外力確實地 傳達到晶圓1，抑制割斷不良的發生。 13 200902209 又，本實施形態中，晶圓！與遮光構件7〇之間沒有間隙 貼著於切割帶62是困難的。因此，會有晶圓！之外緣部^與 遮光構件70之内緣部72之間產生間隙W2，並且雷射光線L 照射於该間隙W2之切割帶62之虞。然而，藉將間隙W2之 5距離設定於0.lmm以内，可抑制間隙W2對於切割帶62或夾 頭台之影響。以往如第4圖所示，由晶圓1之外緣部1&於 0.1mm左右外側（距離W1)之處開孔。因此，若在由晶圓工之 外緣部la在O.lmm以内之距離，切割帶62則不會受到雷射光 線L之影響。 10 [4]其他實施形態 上述實施形態之遮光構件7 〇之截面形狀為單純之矩 形，但即使為如第6圖所示之簷形，也可得到與上述實施形 態相同之效果。以下，說明該簷形之遮光構件73。 在如第6圖所示之遮光構件73之開口部74之内緣部 15 75，形成有與晶圓1之外緣部&間隔，且具有超過晶圓丨之 厚度之尚度之外侧緣部76、及由該外側緣部76之上端朝内 侧延伸之簷部77。 該遮光構件73往簷部77之内侧張出之長度有三種形 態：如第6(a)圖所示之覆蓋晶圓丨之外緣部1&之長度、如第 6(b)圖所示之與Ba圓1之外緣部ia一致之長度、或如第“ο) 圖所示之簷部77之前端部77a與晶圓丨之外緣部^產生間隙 W4之長度。若為第6(a)圖之情況，則將覆蓋晶圓丨之外緣部 la之長度W3設定為〇.5mm以下，作為在切斷程序中可將晶 圓1卓片化成晶片之變貝層之形成領域。又，若為第6(c)圖 200902209 之情況’間隙W4與前述實施形態同樣設定在〇1麵以内之 距離。 如第6(a)、（b)圖所示，遮光構件73之簷部77為覆蓋晶 圓1之外緣部la之長度、或與晶圓丨之外緣部1&一致之長度 5時，可防止在由晶圓1之外緣部la朝外側出現之階段，雷射 光線L會照射在遮光構件73，且照射於切割帶62或夾頭台。 - 又如第6(c)圖所示，即使在簷部77之前端面77a與晶圓〗之外 緣la之間有間隙W4，若如上述實施形態，設定為〇1_以 内之距離，則不會受到雷射光線L之影響。又，藉將遮光構 10件73作成簷形，由於在晶圓1與外侧緣部76之間可確保足夠 的距離，因此可抑制晶圓1接觸遮光構件73。結果，可輕易 將遮光構件73配設於晶圓1周圍，並且可抑制晶圓丨與遮光 構件73之接觸造成晶圓1的破損。 上述實施开> 悲中係將1片晶圓貼著於丨個切割帶，但若 15為藍寶石晶圓等較小型的晶圓時，可以複數片貼著於與前 述實施形態相同尺寸之切割帶62，進行雷射加工。此時， ( 遮光構件如第7圖所示具有複數之開口部79(圖中有4個），並 於該開口部79内側配置晶圓。圖中，開口部79之截面形狀 顯示矩形之遮光構件78。 20 將如此複數之小型晶圓貼著於切割帶62時，互相直交 且朝二方向延伸之分割預定線分別朝Χ、γ二方向延伸配置。 藉此，可一次將雷射光線照射於複數晶圓，又亦可依各 個晶圓朝X、Υ方向照射。因此，可有效率地進行雷射光線 之照射動作。然後，將遮光構件78貼著於切割帶62。此時， 15 200902209 與上述實施型態同樣將晶圓之外緣部與開口部79之内緣部 80之距離設定在0.1mm以下。晶圓與遮光構件78貼著於切 割帶後，保持於雷射加工裝置10之夾頭台，並將雷射光線 照射於晶圓之分割預定線。 5 【圖式簡單說明】 第1圖係藉由本發明之一實施形態單片化成複數之半 導體晶片之半導體晶圓之立體圖。 第2圖係適合本發明之一實施形態之方法之雷射加工 裝置之全體立體圖。 10 第3圖係顯示將晶圓與遮光構件貼著於切割帶之狀態 之立體圖。 第4圖係顯示以習知之方法於晶圓照射雷射光線之狀 態之截面圖。 第5圖係顯示藉由一實施形態之方法於晶圓照射雷射 15 光線之狀態之截面圖。 第6(a)〜(c)圖係顯示以其他實施形態於晶圓照射雷射 光線之狀態之截面圖。 第7圖係顯示其他實施形態所使用之切割帶與遮光構 件之立體圖。 20 【主要元件符號說明】 1.. .半導體晶圓 la."外緣部 2.. .分割預定線 3.. .半導體晶圓 4.. .切口 10…雷射加工裝置 12.. .基台 13.. .XY移動台 16 200902209 14…柱體 21.··雷射頭 22…殼體 23.. .臂 24.. .顯微鏡 30.. .X軸基部 31，41·..導軌 32,42.··馬達 33.43.. .滾珠螺桿 34.44.. . X軸驅動機構 40.. .Y轴基部 61.. .切割框架 62.. .切割帶 63. •.孔 70.73.78.. .雷射光線遮光構件 71.74.79.. .開口部 72,75,80."内緣部 76.. .外側緣部 77.. .簷部 77a...前端面 L...雷射光線 W1…距離 \V2,W4…間隙 W3...長度 17The mirror 24 moves up and down with the housing 22 as the housing 22 moves up and down to adjust the focus. The wafer crucible held on the chuck table 21 is moved below the microscope 24 before the laser beam is irradiated, and the image of the surface is imaged by the microscope 24. Then, the image of the image on the surface of the wafer is input to an image processing mechanism (not shown), and the image processing unit detects that the cut-off = predetermined line 2 is detected. Further, the operation of the laser beam irradiation of the moving head laser 21 of the chuck table and the moving table 13 is controlled based on the data of the eight-cut pre-wire 2 detected by the image processing means.爯,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Inside, the planned dividing line 2 is identified by the pattern image of the internal shooting surface. Thereby, the laser light can also be irradiated from the inner side of the wafer 1. 5 In the above laser processing apparatus, the X-axis base 3 is moved in the X-axis direction, and the laser beam is irradiated with the laser beam on the division line 2, thereby being parallel to the X-axis direction. The predetermined line 2 is divided to form a metamorphic layer inside the wafer. Further, by moving the Y-axis base portion 40 in the γ-axis direction, and the laser beam is irradiated with the laser beam on the division planned line 2, the predetermined line 2 is divided by 10 lines in the direction of the ¥ axis. A metamorphic layer is formed inside the circle. After irradiating the laser beam, in order to focus the focus position and the inside of the wafer to form a metamorphic layer, the housing 22 is moved up and down. 'Adjust the upper and lower positions of the laser head 21, and set the focus position of the laser light to the target height inside the wafer. . As described above, the laser beam is irradiated along all of the predetermined line 2 which is parallel to the X-axis direction and the γ-axis direction, and a deteriorated layer is formed inside the wafer. The wafer 1 after the formation of the altered layer is passed through the dicing tape 6 2 and the dicing frame 6 丨, and is placed outside the cutting device and the like, and the dividing line 2 is cut by imparting a force such as a pulling force to the dicing tape 62. The individual semiconductor wafers 3 are formed into a single piece. [3] The wafer and the light-shielding member are attached to the dicing tape, and before the laser processing device is held, the wafer 1 is as shown in Fig. 3, and the inner side is attached to the periphery of the cutting frame 61. Cutting tape 62. Next, an annular light-shielding member 7 having a circular shape and a substantially large-sized opening portion 71 having a shape substantially the same as the wafer crucible is attached to the periphery of the wafer 1 so as to be attached to the periphery of the wafer 1 Cutting tape 6 2 . The wafer 1 and the light shielding member 70 are attached to the cut 12 200902209. When the tape 62 is cut, as shown in FIG. 5, the inner edge portion 72 of the opening portion 71 of the light shielding member 70 and the outer edge portion of the wafer 1 are formed. The distance between the gaps w2 between 13 is set within 0.1 mm. To achieve this setting, the inner diameter of the cover member is set to be larger than the outer diameter of the wafer 1 by less than 2 mm, and when the light shielding member 5 is attached to the dicing tape 62, the gap W2 is ensured to be in the light shielding member. The inner edge portion of the crucible and the outer edge portion 1a of the wafer 1 may be surrounded by the entire circumference. Thus, the wafer i is attached to the dicing tape 62 and held in the horizontal clamp having the laser processing apparatus 1 Further, the width of the light-shielding member 7 in the direction of the warp direction is about 3 to 5 coffee. Further, the thickness of the shade (4) is required to cover the laser light L from the left side of the wire member. Even if the heat of the laser light L is absorbed to some extent, it does not melt. From this point of view, the material of the light-shielding member 7 is suitable for use with the name or stainless steel. Moreover, the light-shielding member 7 is irradiated with the laser light [ It is preferable to perform rough surface processing on the surface to diffuse the irradiated laser light. According to the present embodiment, since the light shielding member 70' is disposed 15 δ in a state surrounding the wafer crucible, the laser beam L is not irradiated. The cutting belt 62 or the chuck table is covered by the light shielding member 70. In the past, due to the boring axis The mechanical control error of the moving mechanism 34% or the x-axis driving mechanism 44, etc., the laser beam L is slightly irradiated to the outer edge portion 1a of the wafer 1, as shown in Fig. 4, the hole is formed in the dicing tape 62. 63. However, in the present embodiment, as shown in FIG. 5, even if 20 laser light rays are slightly irradiated to the outer edge portion 1a of the wafer 1, the light shielding member 70 blocks the laser beam L and is located. The dicing tape 62 or the chuck table below it is not affected, and the dicing tape 62 is not opened. As a result, when the dicing tape 62 is irradiated with the laser beam 1 and the cutting process is performed, the external force can be surely In the first embodiment, it is difficult to adhere the dicing tape 62 to the dicing tape 62. Therefore, in the present embodiment, it is difficult to adhere the wafer to the dicing tape 62. A gap W2 is generated between the outer edge portion and the inner edge portion 72 of the light shielding member 70, and the laser beam L is irradiated to the edge of the slit band 62 of the gap W2. However, the distance of the gap W2 is set to 0. Within .lmm, the effect of the gap W2 on the dicing tape 62 or the chuck table can be suppressed. As shown, the outer edge portion 1 & of the wafer 1 is opened at an outer side (distance W1) of about 0.1 mm. Therefore, if the outer edge portion of the wafer is la within a distance of 0.1 mm, the dicing tape 62 is not affected by the laser beam L. [4] Other Embodiments The cross-sectional shape of the light-shielding member 7 of the above-described embodiment is a simple rectangular shape, but even if it is a dome shape as shown in Fig. 6, The effect similar to that of the above-described embodiment is obtained. Hereinafter, the dome-shaped light shielding member 73 will be described. The inner edge portion 175 of the opening portion 74 of the light shielding member 73 shown in Fig. 6 is formed outside the wafer 1. The edge portion and the spacer have a side edge portion 76 that exceeds the thickness of the wafer stack, and a flange portion 77 that extends inward from the upper end of the outer edge portion 76. The length of the light-shielding member 73 extending toward the inner side of the crotch portion 77 has three forms: the length of the outer edge portion 1 & of the covered wafer cassette as shown in Fig. 6(a), as shown in Fig. 6(b) The length corresponding to the outer edge portion ia of the Ba circle 1 or the front end portion 77a of the crotch portion 77 and the outer edge portion of the wafer cassette as shown in Fig. ο) are the length of the gap W4. (a) In the case of the figure, the length W3 of the outer edge portion la of the cover wafer is set to 〇.5 mm or less, and the formation of the deformed shell layer in which the wafer 1 can be sliced into a wafer in the cutting process can be used. Further, in the case of Fig. 6(c), Fig. 200902209, the gap W4 is set to be within the distance of the 〇1 plane as in the above embodiment. As shown in Figs. 6(a) and 6(b), the light shielding member 73 is the same. When the portion 77 covers the length of the outer edge portion 1a of the wafer 1 or the length 5 of the wafer edge outer edge portion 1 & the length of the wafer 1 is prevented from appearing outward from the outer edge portion 1a of the wafer 1, The laser beam L is irradiated onto the light shielding member 73 and irradiated to the dicing tape 62 or the chuck table. - As shown in Fig. 6(c), even before the ridge portion 77, the end surface 77a and the wafer edge are la Between The gap W4, if set to a distance of 〇1_ as in the above embodiment, is not affected by the laser beam L. Further, by forming the light-shielding 10 member 73 into a dome shape, since the wafer 1 and the outer edge are A sufficient distance can be secured between the portions 76, so that the wafer 1 can be prevented from contacting the light shielding member 73. As a result, the light shielding member 73 can be easily disposed around the wafer 1, and the contact between the wafer cassette and the light shielding member 73 can be suppressed. The wafer 1 is damaged. The above implementation is performed by sticking one wafer to one dicing tape, but if 15 is a small wafer such as a sapphire wafer, a plurality of sheets may be attached to the above The dicing tape 62 of the same size is subjected to laser processing. At this time, (the light shielding member has a plurality of openings 79 (four in the figure) as shown in Fig. 7, and the wafer is disposed inside the opening portion 79. In the figure, the cross-sectional shape of the opening portion 79 shows a rectangular light-shielding member 78. 20 When such a small number of small wafers are attached to the dicing tape 62, the dividing lines which are orthogonal to each other and extend in two directions are respectively Χ, γ2 Directional extension configuration. Thereby, the laser can be used at one time The line is irradiated to the plurality of wafers, and the respective wafers are irradiated in the X and X directions. Therefore, the laser beam irradiation operation can be efficiently performed. Then, the light shielding member 78 is attached to the dicing tape 62. 15 200902209 Similarly to the above embodiment, the distance between the outer edge portion of the wafer and the inner edge portion 80 of the opening portion 79 is set to 0.1 mm or less. The wafer and the light shielding member 78 are attached to the dicing tape and held by the laser. The chuck table of the processing device 10 irradiates the laser beam onto the predetermined dividing line of the wafer. 5 [Simplified Schematic] FIG. 1 is a semiconductor crystal of a semiconductor wafer singulated into a plurality of semiconductor wafers according to an embodiment of the present invention. A perspective view of the circle. Fig. 2 is a perspective view of the entire laser processing apparatus suitable for the method of one embodiment of the present invention. 10 Fig. 3 is a perspective view showing a state in which a wafer and a light shielding member are attached to a dicing tape. Figure 4 is a cross-sectional view showing the state in which a laser beam is irradiated onto a wafer by a conventional method. Fig. 5 is a cross-sectional view showing a state in which a laser beam is irradiated onto a laser by an embodiment. Fig. 6(a) to (c) are cross-sectional views showing a state in which laser light is irradiated onto a wafer in another embodiment. Fig. 7 is a perspective view showing a dicing tape and a light shielding member used in other embodiments. 20 [Description of main component symbols] 1.. Semiconductor wafer la." Outer edge part 2.. Division of predetermined line 3.. Semiconductor wafer 4.. Incision 10... Laser processing apparatus 12... Abutment 13.. .XY mobile station 16 200902209 14...Cylinder 21.··Laser head 22...Shell 23.. Arm 24:. Microscope 30.. X-axis base 31, 41·.. Guide rail 32,42.··Motor 33.43.. Ball screw 34.44.. X-axis drive mechanism 40.. Y-axis base 61.. Cutting frame 62.. Cutting tape 63. • Hole 70.73.78.. Laser light-shielding member 71.74.79.. opening portion 72, 75, 80. " inner edge portion 76.. outer edge portion 77.. 檐 portion 77a... front end surface L... laser Light W1... distance \V2, W4... gap W3... length 17