TW200846800A - Pixel array - Google Patents
Pixel array Download PDFInfo
- Publication number
- TW200846800A TW200846800A TW96118194A TW96118194A TW200846800A TW 200846800 A TW200846800 A TW 200846800A TW 96118194 A TW96118194 A TW 96118194A TW 96118194 A TW96118194 A TW 96118194A TW 200846800 A TW200846800 A TW 200846800A
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- channel layer
- gate
- electrically connected
- halogen
- Prior art date
Links
- 150000002367 halogens Chemical class 0.000 claims description 130
- 229910052736 halogen Inorganic materials 0.000 claims description 115
- 239000003990 capacitor Substances 0.000 claims description 84
- RGCKGOZRHPZPFP-UHFFFAOYSA-N alizarin Chemical compound C1=CC=C2C(=O)C3=C(O)C(O)=CC=C3C(=O)C2=C1 RGCKGOZRHPZPFP-UHFFFAOYSA-N 0.000 claims description 13
- 150000004345 1,2-dihydroxyanthraquinones Chemical class 0.000 claims description 7
- 241000894007 species Species 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000004098 Tetracycline Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 229960002180 tetracycline Drugs 0.000 claims description 3
- 229930101283 tetracycline Natural products 0.000 claims description 3
- 235000019364 tetracycline Nutrition 0.000 claims description 3
- 150000003522 tetracyclines Chemical class 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 241000251468 Actinopterygii Species 0.000 claims 1
- 239000008280 blood Substances 0.000 claims 1
- 210000004369 blood Anatomy 0.000 claims 1
- 238000002161 passivation Methods 0.000 claims 1
- 238000003860 storage Methods 0.000 description 14
- 210000004027 cell Anatomy 0.000 description 11
- 235000019557 luminance Nutrition 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000000295 complement effect Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 210000001787 dendrite Anatomy 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- 241000238366 Cephalopoda Species 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 241000287107 Passer Species 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 241001416177 Vicugna pacos Species 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 235000019658 bitter taste Nutrition 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 102220414497 c.127A>G Human genes 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 125000000532 dioxanyl group Chemical group 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000005612 types of electricity Effects 0.000 description 1
- 230000001755 vocal effect Effects 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Abstract
Description
rw 22011twf.doc/p 200846800 九、發明說明: 【發明所屬之技術領域】 是有關於一種晝素陣列,且特別是有關於-種 糾低閘紐_寄生電容(Cgd)變動之晝素陣列。 【先前技術】 一 隨著視訊技術的迅速發展,平面顯示器⑽_ ^Piay,卿)已成為人們獲得影像資訊的重要介面。其 中,:於涛膜電晶體液晶顯示器d ^ =2=1啊㈣TFT_LCD) 優異_示性能與 成热的製作技術,故大部分的行動電話 =腦等顯示器皆使用薄膜電晶體液晶二 體陳:5的薄膜電晶體液晶顯示器主要是由-薄膜電晶 曰芦所2、::向基板以及一夾於前述二基板之間的液 膜電晶體陣列主要包括排列於基板 查日日體陣列以及與每—薄膜電晶體對應配置之一 二4(plxel Electrode}而構成數個晝素 括閘極、通道層、汲極弟驗, 1乍為液日日頒不早兀的開關元件。 上述之薄膜電晶體陣列基板,其製 2微影及蝕刻步驟。意即藉由曝光的動作〜 圖案轉移至已形狀基板上之光阻層,並經由顯㈣ :圖案化光阻層。接著,再利用圖案化作:蝕:罩 幕’對先阻層下方之膜層進跡進而形== 200846800 22011twf.doc/p 之閑極、通道層、雜、祕、晝錢極以及髓層等構 件。 知的製造技術當中,閘極與掃描線是第一金 $曰(Metall)二源極、汲極與資料線是第二金屬層⑽⑻ 子爲而且’在第—金屬層以及第二金屬層之間具有一層介 j二因此閘極與汲極之間通t會存在所謂的_錄 以下稱作Cgd)。當利用微影姓刻方式製作上述之 與第二金屬層的元件時,若發生曝光偏移,將 使/專膜包晶體的Cgd產生變動。 注^詳細的說明是,當第二金屬層相對於第—金屬層發 =光偏移’錢槪極㈣極之間的重疊面積增加時, 下的公式⑴’較大的cgd將 (,ΧΤ^ΔΥρ) (Feed through voltage) 低0Rw 22011twf.doc/p 200846800 IX. Description of the invention: [Technical field to which the invention pertains] There is a pixel array, and in particular, a pixel array having a variation of the gate-to-parasitic capacitance (Cgd). [Prior Art] With the rapid development of video technology, flat panel display (10) _ ^Piay, Qing has become an important interface for people to obtain image information. Among them,: Yu Tao film transistor liquid crystal display d ^ = 2 = 1 ah (four) TFT_LCD) excellent _ shows performance and heat generation technology, so most mobile phones = brain and other displays are using thin film transistor liquid crystal two body Chen: The thin film transistor liquid crystal display of 5 is mainly composed of a thin film electro-crystal hoist 2, a substrate, and a liquid film transistor array sandwiched between the two substrates, which mainly comprises an array arranged on the substrate and a solar array. Each of the thin-film transistors corresponds to one of the two 4 (plxel Electrode) and constitutes a number of elements including the gate, the channel layer, and the bungee, and the first is the switching element that is not early in the day. The transistor array substrate has a lithography and etching step, which means that the photoresist layer is transferred to the photoresist layer on the patterned substrate by the exposure operation, and the photoresist layer is patterned through the display (4). Then, the pattern is reused. The eclipse: the mask: the film layer under the first resist layer and then the shape == 200846800 22011twf.doc/p idle pole, channel layer, miscellaneous, secret, 昼 money pole and marrow layer and other components. In manufacturing technology, the gate and scan line are the first The metal source (Metall) two source, drain and data lines are the second metal layer (10) (8) and there is a layer between the first metal layer and the second metal layer, so that between the gate and the drain There will be a so-called _ recorded below called Cgd). When the above-mentioned element with the second metal layer is formed by the lithography method, if the exposure shift occurs, the Cgd of the film-specific crystal is changed. Note ^ In detail, when the overlap area between the second metal layer and the first metal layer = optical offset 'the money's drain (four) pole increases, the lower formula (1) 'larger cgd will (, ΧΤ ^ΔΥρ) (Feed through voltage) Low 0
CC
AVAV
Cgd + Cst + CLC g (1) 由此可知,雖然:輸人相同的閘極信號與源極信號,但 疋由於上述的曝光偏移所導致的Cgd的變動 電壓不同。因此,晝素的輝度將會低於原=# f曝光偏移前的輝度。而液晶顯示面板上的各個晝素將可 能因為其Cgd的變動’而產生不同的顯示輝度,而降低了 液晶顯示面板整體的顯示品質。 一 【發明内容】 有鑑於此,本發明之目.的是提供一種晝素陣列, 低因曝光偏移時所引起之閘極汲極間寄生電容(cgd)變 7 200846800 —^.xfW 2201Itwf.doc/p 動的影響。 所構ί發=提供—種畫素陣列,此晝素陣列由多組畫素 f冓成其中母-組晝素是由-第-及第二掃描線以及— 資料線所驅動。每_组圭夸白扭 ^ . ' 圭辛I开1雜母、、且旦素包括一第一晝素單元與一第二 體而言’第-晝素單元包括-第一閘極、— 通迢層、-第—源極、—第—L形汲極以及—第一金 閘極與第—掃描線電性連接。第-通道‘ 於^閘極上方。而第_源極則位於第—通道層上 卞後弟l形汲極位於第一通道層上 方。弟-晝素電極與第一L形没極電性 二 元包括-第二閘極、一第二通道層 早 L形汲極以及一第二晝素電 :::極、-弟二 沾、έ拉 ^十 昂—閘極與弟二掃描结雷 性連接’而弟二通道層則位於第二閘極上方。^ Ϊ電 _位於第^通道層上方並與資料線電性連接而第了 形没極位於第二通道層上方。特厂 第- L概極水平翻轉⑽度的形式 極與第二L形汲極電性連接。 罘一畫素電 在j發明之一實施例中, 二接觸窗。第-接觸窗位於第 ^ f觸固與-第 之間,以使第一晝素電極與第一 ,、弟一 L形汲極 二接觸窗位於第二晝素電極盘二極電性連接。而第 二晝素電極與第二匕形〉及極電『生^域極之間,以使第 在本發明之一實施例中,其 方的第一閘極中具有—第一門 ;口刀弟—L形沒極下 下方的第二閘極中具有—第二開口而於部分第二L形沒極 8Cgd + Cst + CLC g (1) From this, it can be seen that although the same gate signal and source signal are input, the variation voltage of Cgd due to the above-described exposure shift is different. Therefore, the luminance of the halogen will be lower than the luminance before the original =# f exposure shift. On the other hand, the individual elements on the liquid crystal display panel may have different display luminances due to variations in their Cgd, which lowers the overall display quality of the liquid crystal display panel. SUMMARY OF THE INVENTION In view of the above, it is an object of the present invention to provide a halogen array which has a low parasitic capacitance (cgd) between gates and bucks caused by exposure shifting. 200846800 —^.xfW 2201Itwf. The impact of doc/p. The structure of the pixel is provided by a plurality of sets of pixels f, wherein the parent-group element is driven by the -first and second scan lines and the data line. Every _ group 圭夸白扭^. 'Guisin I open 1 miscellaneous mother, and the dansin includes a first halogen unit and a second body 'the first 昼 prime unit includes - the first gate, The pass layer, the -first source, the -L-shaped drain, and the first gold gate are electrically connected to the first scan line. The first channel is above the gate. The first source is located on the first channel layer, and the first elliptical pole is located above the first channel layer. The dimorphic electrode and the first L-shaped non-polarity binary include - a second gate, a second channel layer, an early L-shaped drain, and a second halogen battery::: pole, - brother dip, έ拉^十昂—The gate and the second two scan the lightning connection' while the second channel layer is above the second gate. ^ Ϊ _ is located above the channel layer and is electrically connected to the data line and the first shape is located above the second channel layer. Special Factory The first-L is extremely horizontally flipped (10) degree. The pole is electrically connected to the second L-shaped drain. In one embodiment of the invention, two contact windows. The first contact window is located between the ^f contact and the -th, so that the first halogen electrode is electrically connected to the first and second L-type drain electrodes at the second electrode of the second halogen electrode. And the second halogen electrode and the second electrode shape and the polarity electrode between the domain electrodes, so that in one embodiment of the invention, the first gate of the first gate has a first gate; The second brother of the lower part of the L-shaped lower pole has a second opening and a part of the second L-shaped electrode.
LfW 22011tw£doc/p 200846800 在本發明之一實施例令, -第二電容電極。第—電容括H容電極以及 而第二電容電極則位於第二】素==晝素電極下方。 本發明提出另一種書夸陵/ 4 所構成,其中每一組書^^車列素陣列由多組晝素 資料線所驅動。每一組書-第-與第二 晝素單元。具體而言,第!弟:f素單元與-第二 素電極。第-閘極^掃l形汲極以及一第一晝 於弟-閘極上方1第_源通迢層位 外,第一二上心开,汲極位於第-通道層上方。另 -勹扛二’、电本,、弟—乙形汲極電性連接。第-圭辛單 兀包括—第二間極、—第二通道層、旦ΐ早 L形汲極以及一第二書辛 外 弟一源極、一弟二 接,而第—電極β弟二閘極與掃描線電性連 ,而弟—通道層則位於第二間極二 位於弟二通道層上方並與第二資料線電性連接。 汲極位於第二通道層上方。 接弟一L形LfW 22011 tw doc/p 200846800 In an embodiment of the invention, a second capacitor electrode. The first capacitor includes the H capacitor electrode and the second capacitor electrode is located below the second 素 == 昼 电极 electrode. The present invention contemplates another book, Maa Ling/4, in which each set of books is driven by a plurality of sets of halogen data lines. Each set of books - the first - and the second element. Specifically, the first brother: the f element unit and the - second element electrode. The first gate is swept away from the elliptical pole and the first gate is located above the first gate of the first gate. The first pole is open and the drain is located above the first channel layer. Another - 勹扛 two ', electric,, brother - B-shaped 汲 extremely electrical connection. The first-Guisin single 兀 includes - the second pole, the second channel layer, the early L-shaped bungee, and the second book, the other brother, the source, the second brother, and the first electrode, the second brother The circuit is electrically connected to the scan line, and the second channel is located above the second channel layer and electrically connected to the second data line. The bungee is located above the second channel layer. Pick up a L shape
- L形汲極是呈鏡像排列。另外;與第L 形汲極電性連接。 乐一旦言电極與弟一L 在本發明之一實施例中,一一 第二接觸窗。第—接觸 已括接觸®以及一 極之間,以使;4=::1素電極與第-L雜 二晝素電極與第二l形沒極之間 弟一旦素電極與第二L做極電性連接。 在本發明之-實施例中,其中於部分第一乙形沒極下 9 22011twf.doc/p 200846800. 方的第-閘極中具有—第—開口,而於部分第形沒極 下方的第二閘極中具有一第二開口。 #在本,明之一實施例中,更包括一第一電容電極以及 一,二電容電極。第一電容電極位於第一畫素電極下方, 而第一電容電極則位於第二晝素電極下方。 本發明之一實施例中,每一組晝素更包括由一第二掃 描線所驅動,且每一組晝素更包括一第三畫素單元與一第 =晝素單元。第三晝素單元包括第三閘極、第三通道層、 ,二,極、第三L形汲極以及第三畫素電極。第三閘極與 第二掃描線電性連接。第三通道層位於第三閘極上方。第 三源極位於第三通道層上方並與第一資料線電性連接。第 三L形汲極位於第三通道層上方,而第三L形汲極是第一 L形汲極水平翻轉18〇度的形式。第三晝素電極與第三l 形汲極電性連接。另外,第四晝素單元包括第四閘極Γ第 =通道層、第四源極、第四L形汲極以及第四晝素電極。 第四閘極與帛二掃描線電性連接。第四通道層於第四問極 上方。第四源極位於第四通道層上方並與第二 連接:第四L形汲極位於第四通道層上方 極與第二L形汲極是呈鏡像排列。第四晝素電極與第四乙 形没極電性連接。 一在本發明之一實施例中,更包括一第一接觸窗、一 二接觸窗、一第三接觸窗以及一第四接觸窗。其中,第· ,觸=位於第一晝素電極與第一L形汲極之間,以使第· =素包極與第一 L形汲極電性連接。第二接觸窗位於第· 旦素電極與第二L形汲極之間,以使第二晝素電極與第- 200846800 υο i υ i fW 22011 twf.doc/p L ^及極連接。另外1三接 與第三L雜極H㈣: J:-素-極 電性連接。此外,第四接觸:::”二1^形汲極 形汲極之間,讀心自紐與第四L 在本發明之-實祐^與弟四[形沒極電性連接。 方的第-閘極中、部分第-部分第—[形汲極下 邱八笛二τ m 弟—L形汲極下方的第二閘極中、 ^刀弟二L祕極下方的第三閘極巾 極:方的第四閉極中分別具有-第-、第二、:第= 一第四開口。 弟一以及 笛一 Ϊί發明之—實施例中,更包括—第—電容電極、- 弟一電谷電極、'一第二命六年ρ 一帝交恭搞你你楚二屯谷电極以及一第四電容電極。第 :电Μ於弟-旦素電極下方,而 電容電極則分別位於第二、第三、第四晝素電弟 壹+所種4素㈣’此4素㈣由多組 『=成。、中母—組畫素是由一掃描線以及一盥 弟巧,驅動。每一組晝素包括一第一晝素單元以; ΐ ΐ ,、。第—晝素單认括-第-閘極、-第- 搞“ί:源極、一第—汲極以及一第-晝素電極。 '朴,、知描線電性連接。第一通道層位於第一閉極上 倾=沿H向延伸。第—源極位於第—通道層上方 =弟—於桃連接m祕位於第-通道 =一方,而第一晝素電極與第一汲極電性連接。第二晝素 羊兀包括-第二閘極、—第二通道層、—第二源極、二第 、,以及第一晝素電極。第二閘極與掃描線電性連 。弟二通道層位於第二閘極上方並沿—第二方向延伸, 11 200846800 υο i u u yi i W 22011twf.doc/p 且第·^方向與第—方向不相同。第二源極位於第二通道声 上方並與第二㈣線電性連接。另外,第二汲極位於1 通而第"畫素電極與第二汲極電性連接。' 一 在本發明之一實施例中,其中第一方向與第二方向垂 直 #-ί本Ϊ明之一實施例中,更包括-第-接觸窗以及-弟-接觸窗。其巾,第—接觸窗位於第—晝素電極與 汲極之間,以使第一晝素電極鱼一地 /、 二接觸窗位於第二書素電極*第弟^極,連接。而第 素電極與第二跡紐連接,。、祕之間,以使第二晝 在本發明之一實施例中,更包括―第 -第二電;電極。其中,第-電容電極二; 下方’而第二電容電極則位於第二晝素電極下方。’、° 第-tr之—實施例中,所述之晝素陣列更包括由一 動:ίΐ—組ί素更包括-第三晝素單元 道層、第:诉:70-弟二晝素單兀包括第三閘極、第三通 接弟二通道層位於第三閘極上方, 上方Λ,ΐ沿第二方向延伸。第三源極位於第三通道層 層上方且?,料線電性連接。第三沒極位於第三通^ ,旦素電極與第三祕電性連接。另外,第四 第四閘極、第四通道層、第四源極、第四液 第四、s、弟四晝素電極。第四閘極與第二掃描線電性連接。 k遏層位於第四閘極上方,其中第四通道層沿第— °延伸。第四源極位於第四通道層上方,且與第二資料線 12 200846800 rw 22011twf.d〇c/p 於第四通道層上方。第四畫素電極, 向與實施例中< 畫素陣列,其中第一方 -偏本發明之—實施例中之晝素陣列,更包括-第 一接觸自與一第四接觸窗。其中 弟 於第三晝素電極與第三没極之間‘第;:窗分別位 極電性連接。#晝素電極分別與第三、第四汲 :發:之—只施例中之晝素陣列’更包括-第 :二=3電容電極。其中第三電容電極位於; 一一素电極下方。而弟四電容電極 本發明再提出另一種書+ ,^四1素電極下方。 素=,其中每—組畫素 二驅動。每-些組晝素包括—第-晝素單元盘- 第二3:兀中,第—晝素單元包括—第—閘極、、一 工:通迢層、一第—源極、一第一汲極與一第一晝 。 ^一,極與掃描線電性連接。第—通道層位 ί 通道層上方並與第-資料:i -汲極電性連接。道素電極與第 -、畜、苦a ^ 力外,弟一晝素早兀包括第二閘極、第 、弟二源極、第二汲極以及第二晝素電極。第二 ,極與掃描線電性連接。第二通道層位於第二閘極上方了 ΐ:源極位於第二通道層上方並與第二資料線電性連接。 弟-及極位於第二通道層上方。第二晝素電極與第二汲極 13 2OO846800 A rW 22011 twf.doc/p 電性連接。特別的是,第 元之結構是呈鏡向排列 查 素單元之結構與第二晝素單 在本發明之一實施你| φ, 二接觸窗。其中,第一、第匕*一弟一接,窗與-第 極與第-汲極之間以及第一:紊窗t別位於第-晝素電 分別使第-、第電極與第二雜之間’以 接。 一,、包極”弟一汲極、第二汲極電性連 在本發明之一實施你| φ, 第一恭交+搖更包括一弟一電容電極與一 ^"7,極。其中第—電容電極位於第-晝素電極下 方。=弟二電容電極則位於第二畫素電極下方:下 所搂4發明再提出—種晝素陣列,此書素陣列由多έ且壹专 所構成,其中每一έ且金夸3山…一ΐ干W由夕、、且畫素 眘祖綠Γ 、旦素疋由—第一與第二掃描線以及一 組晝素包括—第—晝素單元與—第二 :ΐ:Γ 一晝素單元’包括-第-閘極、-第 通迢層、一第一源極、— 弟 第-閘極盘第—掃tut及極與―弟—晝素電極。 搞」 ㈣線A性連接。第—通道層位於第-閘 接I:第一源極位於第-通道層上方並與資料線電性連 t而弟—没極位於第—通道層上方。第-晝素電極則^ ί:ΐϊΓΐ接。另外’第二晝素單元包括第二閘極: ! m第二汲極以及第二晝素電極。第 二極二弟二掃描線電性連接。第二通道層位於第二閑極 二第—源極位於第二通道層上方並與資料線電性連 極祕於第二通道層上方。第二晝素電極與第二汲 罩-电性連接。特別的是’第一晝素單元之結構與第二 早疋之結構是呈鏡向排列。 一、 200846800 υο i υ i i W 22011twf.doc/p -接二發:rr例中’更包括—第一接觸窗與-第 一接觸固。其中’弟一、第二接觸窗分別位於第一晝 極與第:汲極之間以及第二晝素電極與第二汲極之間:、二 分別使第-、第二晝素電極與第—汲極、第二汲極電性 接。 在本發明之一實施例中,更包括_第一電容電極盥一 第二電容電極。其中第一電容電極位於第一晝素電^下 方。而第二電容電極則位於第二晝素電極下方二/、包- L-shaped bungee is mirrored. In addition; electrically connected to the L-shaped drain. In the embodiment of the invention, the first electrode is a second contact window. The first-contact has been contacted between the contact and the one pole, so that the 4=::1 elemental electrode and the first-l-dioxin electrode and the second l-shaped electrode are between the once-electrode and the second L Extremely electrical connection. In the embodiment of the present invention, wherein the first sigmoid has a first opening in the first gate of the second singular singularity, and a portion below the partial eccentricity The second gate has a second opening therein. In one embodiment of the present invention, a first capacitor electrode and one or two capacitor electrodes are further included. The first capacitor electrode is located below the first pixel electrode, and the first capacitor electrode is located below the second pixel electrode. In one embodiment of the present invention, each set of pixels further includes a second scan line, and each set of pixels further includes a third pixel unit and a first pixel unit. The third halogen unit includes a third gate, a third channel layer, a second pole, a third L-shaped drain, and a third pixel electrode. The third gate is electrically connected to the second scan line. The third channel layer is located above the third gate. The third source is located above the third channel layer and electrically connected to the first data line. The third L-shaped drain is located above the third channel layer, and the third L-shaped drain is in the form of a first L-shaped drain horizontally flipped by 18 degrees. The third halogen electrode is electrically connected to the third 1-shaped drain. In addition, the fourth halogen unit includes a fourth gate, a channel layer, a fourth source, a fourth L-shaped drain, and a fourth halogen electrode. The fourth gate is electrically connected to the second scan line. The fourth channel layer is above the fourth question pole. The fourth source is located above the fourth channel layer and is connected to the second: the fourth L-shaped drain is located above the fourth channel layer, and the second L-shaped drain is in a mirror image. The fourth halogen electrode is electrically connected to the fourth quad. In an embodiment of the invention, a first contact window, a second contact window, a third contact window and a fourth contact window are further included. Wherein, the touch is located between the first halogen electrode and the first L-shaped drain to electrically connect the first cladding element to the first L-shaped drain. The second contact window is located between the first denier electrode and the second L-shaped drain such that the second halogen electrode is connected to the -200846800 υο i υ i fW 22011 twf.doc/p L ^ and the pole. The other 1 and 3 are connected to the third L-H. (4): J:----Electrically connected. In addition, the fourth contact:::"two 1^-shaped bungee-shaped bungee between the reading of the heart and the fourth L in the present invention - the real ^ and the fourth four [form no electric connection. In the first-part of the first gate, the first part of the first gate, the second gate of the lower gate of the L-shaped bungee, and the third gate below the secret pole of the second brother The towel pole: the fourth closed pole of the square has - the first, the second, the second = the fourth opening respectively. The brother and the flute are invented - in the embodiment, the first includes - the first capacitor electrode, - the younger An electric valley electrode, 'a second life six years ρ an emperor Gong Gong Gong you Chu Chu Shigu electrode and a fourth capacitor electrode. The first: the electric Μ 弟 弟 旦 旦 旦 旦 旦 旦 旦 , , , , , , Located in the second, third, and fourth 电素电壹壹+ of the four primes (four) 'this four primes (four) by multiple groups of "=.., the mother-group of pixels is composed of a scan line and a slapstick, Driven. Each group of elements includes a first element unit; ΐ ΐ , , . . . - - - - - - - - - - - - - - - - - - - - - - - - - - - - A first-halogen electrode. 'Pak, know the line of electrical connection. The first channel layer is located on the first closed pole and extends in the H direction. The first source is located above the first channel layer = the younger one is located at the first channel = one side, and the first halogen electrode is electrically connected to the first electrode. The second halogen alpaca includes a second gate, a second channel layer, a second source, a second electrode, and a first halogen electrode. The second gate is electrically connected to the scan line. The second channel layer is located above the second gate and extends along the second direction, 11 200846800 υο i u u yi i W 22011twf.doc/p and the direction of the ^^ is different from the first direction. The second source is located above the second channel sound and is electrically connected to the second (four) line. In addition, the second drain is located at 1 and the "pixel electrode is electrically connected to the second drain. In one embodiment of the invention, wherein the first direction is perpendicular to the second direction, an embodiment of the invention further includes a - contact window and a contact window. The towel, the first contact window is located between the first halogen electrode and the drain, so that the first halogen electrode and the second contact window are located at the second book electrode*. The first electrode is connected to the second trace. Between the two, in order to make the second 昼 in one embodiment of the invention, further includes a "first - second electric" electrode. Wherein, the first capacitor electrode is second; and the second capacitor electrode is located below the second halogen electrode. In the embodiment, the 昼 阵列 阵列 阵列 阵列 阵列 阵列 阵列 阵列 阵列 阵列 阵列 阵列 阵列 阵列 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 The second gate and the third passer are located above the third gate, and the upper jaw extends in the second direction. The third source is located above the third channel layer and is electrically connected. The third pole is located in the third pass, and the dendrite electrode is connected to the third secret. In addition, the fourth fourth gate, the fourth channel layer, the fourth source, the fourth liquid, the fourth, the s, the fourth tetracycline electrode. The fourth gate is electrically connected to the second scan line. The k-thin layer is located above the fourth gate, wherein the fourth channel layer extends along the first -°. The fourth source is located above the fourth channel layer and is above the fourth channel layer with the second data line 12 200846800 rw 22011twf.d〇c/p. The fourth pixel electrode, to the < pixel array of the embodiment, wherein the first square-biased embodiment of the present invention, the pixel array further includes a first contact and a fourth contact window. The younger brother is between the third halogen electrode and the third electrode. The first: the window is electrically connected. The #昼素 electrode and the third and fourth 分别: hair: the only example of the halogen array in the example include - the second: three capacitor electrode. The third capacitor electrode is located below the one-electrode electrode. And the fourth capacitor electrode of the present invention is further proposed by the other book +, ^ four element electrode below. Prime =, where each - group of pixels is driven by two. Each of the group of elements includes a - 昼 - 单元 单元 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - One bungee and one first. ^ One, the pole is electrically connected to the scan line. Channel-level horizon ί Above the channel layer and electrically connected to the -data:i-汲 pole. In addition to the first, the animal, and the bitterness, the second electrode includes the second gate, the second source, the second drain, and the second halogen electrode. Second, the pole is electrically connected to the scan line. The second channel layer is located above the second gate. The source is located above the second channel layer and electrically connected to the second data line. The brother-and-pole is located above the second channel layer. The second halogen electrode is electrically connected to the second drain 13 2OO846800 A rW 22011 twf.doc/p. In particular, the structure of the element is mirror-aligned with the structure of the element and the second element is implemented in one of the inventions | φ, two contact windows. Wherein, the first, the third, the first one, the window and the - the first and the first and the first and the first and the first: the turbulent window t are located in the first - the second, respectively, the first, the first and the second Between the 'to pick up. First, the package pole "dipole one pole, the second pole electric connection in the implementation of one of the inventions you | φ, the first Gongjiao + shake more includes a brother and a capacitor electrode with a ^ " 7, pole. The first-capacitor electrode is located below the first-deuterium electrode. The second-capacitance electrode is located below the second pixel electrode: the next 搂4 invention is further proposed as a species of alizarin array, which is composed of multiple layers and The composition, each of which is 金 金 3 山 山 ... ... ... 金 金 金 金 金 金 金 金 金 金 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Alien unit and - second: ΐ: Γ a unit of the unit 'including - the first gate, the first layer, the first source, the first - the gate - the tut and the pole - Brother - Alizarin electrode. Engage" (four) line A-sex connection. The first channel layer is located at the first gate I: the first source is located above the first channel layer and electrically connected to the data line, and the second pole is located above the first channel layer. The bismuth electrode is ^ ί: ΐϊΓΐ. Further, the second halogen unit includes a second gate: !m second drain and a second halogen electrode. The second pole two brothers two scan lines are electrically connected. The second channel layer is located at the second idler pole. The first source is located above the second channel layer and electrically connected to the data line is secreted above the second channel layer. The second halogen electrode is electrically connected to the second cover. In particular, the structure of the first halogen unit and the structure of the second early stage are arranged in a mirror direction. I. 200846800 υο i υ i i W 22011twf.doc/p - followed by two rounds: rr in the case of 'more includes - first contact window and - first contact solid. Wherein, the second contact window is located between the first drain and the first drain and between the second halogen electrode and the second drain: the second and the second and second halogen electrodes respectively - The bungee and the second pole are electrically connected. In an embodiment of the invention, the method further includes a first capacitor electrode and a second capacitor electrode. The first capacitor electrode is located below the first halogen electrode. The second capacitor electrode is located below the second halogen electrode.
上述本發明中的晝素陣列設計中,是將每一組的晝素 中的晝素單元之汲極設計成具有鏡向排列或是水平二轉 18〇度的形式,或是將每一組晝素中的晝素單元設計具有 鏡向的形式。s此,此種料可以使得在製作晝素陣^結 構^過程中,即使發生曝光偏移時,因每一組晝素中的書 素單元的特殊排列設計,將能使每一組晝素中的閘極與= 極間寄生電容(Cgd)的變動彼此互補,進而能使每二組 晝素中的晝素單元之輝度可以相互作補償。因此,利用本 發明之晝素陣列的液晶顯示面板也將具有良好的顯示品 *為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂’下文特舉較佳實施例,並配合所附圖式,作詳細說 明如下 v " 【實施方式】 【第一實施例】 立 圖1為本發明第一實施例之一種晝素陣列的局部示 思圖’此晝素陣列是由多組晝素所構成,而在圖1中僅以 15 200846800 uoiuijyiiW 22011twf.doc/p · 其中一組畫素(由二個晝素單元所構成)來代表說明。請參 照圖1,在本實施例中,每一組晝素100是由一第一掃描 線110與弟一知描線120以及一資料線132所驅動。其中, 弟一知描線110與弟二掃描線120沿著水平X方向作延 伸,而資料線132則沿著垂直γ方向作延伸。每一組書素 100包括一第一晝素單元14〇與一第二畫素單元15〇。 具體而言,第一晝素單元14G包括一第一閘極14〇a、 一第一通道層140b、一第一源極140c、一第一 L形汲極 140d以及一第一晝素電極14〇e。更詳細地說,第一閘極 140a與第一掃描線11〇電性連接。第一通道層M〇b則位 於第一閘極140a上方,而第一源極14〇c則位於第一通道 層140b上方並與資料線丨32電性連接。第一 L形汲極丨4〇d 位於第一通道層14〇b上方。第一晝素電極14如與第一[ 形汲極140d電性連接。另外,第二晝素單元15〇包括一第 一閘極150a、一第二通道層15〇b、一第二源極15〇c、一 f二JL形汲極I50d以及一第二晝素電極15〇e。更詳細地 • 說,第二閘極150a與第二掃描線120電性連接,而第二通 迢層M〇b位於第二閘極150a上方。另外,第二源極i5〇c 位於第二通道層15〇b上方並與資料線132電性連接。第二 L形汲極150d位於第二通道層15〇b上方。特別的是,第 ,L开/及極l5〇d疋弟一 l形没極i40d水平翻轉度的 形式。另外,第二晝素電極ls〇e與第二[形汲極電 性連接。 在本實施例中,若在製作過程中發生水平χ方向曝光 16 200846800 2201Itwf.doc/p 偏移時,此組晝素1〇〇中的第一 L形汲極14〇d與第二l 形汲極150d彼此呈水平翻轉18〇度,因此可以使得第一與 第二晝素單元140、15〇内的閘極與汲極間寄生電容(cgd) 的變動彼此互補,進而使此組畫素1〇〇内的兩畫素單元 140、150的輝度相互補償。 在一f施例中,每一組畫素1〇〇更包括一第一接觸窗 160與一第二接觸窗17〇。其中,第一接觸窗16〇位於第一 晝素包極140e與第一 l形沒極i40d之間,以使第一書素 包極MOe—與第一 l形汲極Mod電性連接。而第二接觸窗 170 ^於第—晝素電極15〇e與第二L形汲極15如之間, 以使第一晝素電極150e與第二形汲極150d電性連接。 在另貝施例中,在每一組晝素1〇〇中於部分第一 l 形没極140d下方的第一閘極1術中具有一第一開口 ,而於部分第二L形汲極15〇d下方的第二閘極15〇a 具有一第二開口 19〇。這裡所謂的部分第一 l形汲極 ^下方指的是第一乙形沒極140d與第一通道層140c重 $域=的部分。同樣的,部分第二L形汲極刪下 以外的部分。 實施例中’每一組晝素100更包括-第-電容 以及一第二電容電極194。第一電容電極192位 去帝旦素電極140e下方。第二電容電極194位於第二晝 播下方。在本實關巾’所繪示_存電容的架 :儲存電容形成於共通線上(Cst on common)。鈇而, 本發明並非限定贿電容的_為齡電容形成於共通線 17 200846800 22011twf.doc/p (Cstcm common)。而且,在圖式中所繪示的 Ϊ容電極192、194 _狀是Η形,但本制並不對^ ^極的形狀作限定,電容電極的其他形式亦可以應用^ ί;二此Γ;其他實施例中’儲存電容的架構亦可為儲 存電谷形成於掃描線上(Cst 〇n gate)。 【第二實施例】 圖2為本發明第二實施例之一種晝素陣列的局部示音 圖,此晝素陣般由多組畫素所構成,而在圖2中僅以^ 中-組畫素(由二個晝素單元所構成)來代表制。請^ 圖2,在本^施例中,每一組晝素2〇〇是由是由一掃描線 以及ϋ料線13G與第二資料線23()所驅動。掃 描線no沿著水平X方向作延伸,而第一資料線13〇鱼第 二資料線230則沿著垂直γ方向作延伸。每一組晝素綱 ^括-第-晝素單it 14G與-第二晝素單元25()。其中, 第一晝素單元140與第一實施例相同,不加贅述。第二書 ,單元250包括一第二閘極25〇a、一第二通道層25〇b、一 第二源極250c、——第二L形汲極25〇d以及一第二畫素電 極250e。更詳細地说,第二閘極25〇a與掃描線11〇電性 連接。第二通道層250b則位於第二閘極25〇a上方。第二 源極250c位於第二通道層250b上方並與第二資料線23〇 兒性連接。第二L形汲極250d則位於第二通道層25〇b上 方4寸別的疋,其中弟一 L形汲極250d與第一 L形没極 I40d是呈鏡像排列。另外,第二晝素電極25〇e與第二乙 形汲極250d電性連接。 在本實施例中,若在製作過程中發生水平χ方向曝光 18 200846800 / A ;W 22011twtdoc/p 偏移時,此組晝素200中的第—L形汲極14〇d與第二L 形汲極150d因為彼此是呈鏡像的形式關係,因此可以使得 第一與第二畫素單元140、250内的閘極與汲極間寄生電容 (Cgd)的變動彼此互補,進而使此組晝素内的兩書 素單元140、250的輝度相互補償。 在一實施例中,每一組晝素200更包括一第一接觸窗 160以及一第二接觸窗270。第一接觸窗16〇位於第一畫素 龟極140e與弟一 L形>及極14〇d之間,以使第一書素電才圣 14=與第一 L形汲極140d電性連接。第二接觸窗27=位 於第二晝素電極250e與第二L形汲極250d之間,以使第 一旦素%*極250e與弟一 L·形>及極250d電性連接。 在另一實施例中,每一組晝素2〇〇中於部分第一 l形 汲極140d下方的第一閘極i4〇a中具有一第一開口 18〇, 而^部分第二L形汲極250d下方的第二閘極25〇a中具有 二第二開口 290。這裡所謂的部分第一 L形汲極M〇d下方 指的是第一 L形汲極140d與第一通道層14〇c重疊區域以 ^的部分。同樣的,部分第二L形汲極25〇d下方指的是 第二L形汲極250d與第二通道層250c重疊區域以外的部 分。 ^在又一實施例中,每一組晝素200更包括一第一電容 私,192以及一第二電容電極294。第一電容電極192,位 於第—晝素電極140e下方。第二電容電極294位於第二書 ,電極25〇e下方。在本實施例中所繪示的儲存電容的架^ 屬於儲存電容形成於共通線上(Cstonc〇mm〇n)。而且, 在圖式中所繪示的第一與第二電容電極192、294的形狀是 19 200846800 22011 twf.d〇c/pIn the above-described halogen array design of the present invention, the anode of the halogen element in each group of halogen elements is designed to have a mirror orientation or a horizontal two-turn 18 degree, or each group The halogen element design in the alizarin has a mirrored form. s, this kind of material can make each group of alizarins in the process of making the alizarin matrix structure ^ even if the exposure shift occurs, because of the special arrangement design of the pixel units in each group of elements. The variation of the parasitic capacitance (Cgd) between the gate and the inter-electrode is complementary to each other, so that the luminance of the pixel units in each of the two groups of pixels can be compensated for each other. Therefore, the liquid crystal display panel using the halogen array of the present invention will also have a good display product* to make the above and other objects, features and advantages of the present invention more apparent and easy to understand. The drawings are described in detail below. [Embodiment] [First Embodiment] FIG. 1 is a partial schematic view of a pixel array according to a first embodiment of the present invention. The group consists of alizarins, and in Fig. 1, only 15 200846800 uoiuijyiiW 22011twf.doc/p · one set of pixels (consisting of two elementary units) is used to represent the description. Referring to FIG. 1, in this embodiment, each set of pixels 100 is driven by a first scan line 110 and a line 120 and a data line 132. Wherein, the line 1 and the second scan line 120 extend along the horizontal X direction, and the data line 132 extends along the vertical γ direction. Each set of books 100 includes a first pixel unit 14A and a second pixel unit 15A. Specifically, the first pixel unit 14G includes a first gate 14A, a first channel 140b, a first source 140c, a first L-shaped drain 140d, and a first halogen electrode 14. 〇e. In more detail, the first gate 140a is electrically connected to the first scan line 11A. The first channel layer M〇b is located above the first gate 140a, and the first source 14〇c is located above the first channel layer 140b and electrically connected to the data line 32. The first L-shaped drain 丨4〇d is located above the first channel layer 14〇b. The first halogen electrode 14 is electrically connected to the first [shaped drain 140d]. In addition, the second halogen unit 15A includes a first gate 150a, a second channel layer 15〇b, a second source 15〇c, a f-JL-shaped drain I50d, and a second halogen electrode. 15〇e. In more detail, the second gate 150a is electrically connected to the second scan line 120, and the second pass layer M〇b is located above the second gate 150a. In addition, the second source i5〇c is located above the second channel layer 15〇b and electrically connected to the data line 132. The second L-shaped drain 150d is located above the second channel layer 15〇b. In particular, the first, L open / and the extreme l5 〇 d 疋 一 l l l l i i i i i i i i i i i i i i i i i i i In addition, the second halogen electrode ls〇e is electrically connected to the second [shaped electrode. In this embodiment, if the horizontal χ direction exposure 16 200846800 2201Itwf.doc/p offset occurs during the manufacturing process, the first L-shaped drain 14 〇 d and the second l-shaped in the set of 昼 〇〇 1 此The drains 150d are horizontally flipped by 18 degrees to each other, so that the variation of the parasitic capacitance (cgd) between the gate and the drain of the first and second halogen units 140, 15〇 can be made complementary to each other, thereby making the group of pixels The luminances of the two pixel units 140, 150 in one turn compensate each other. In one embodiment, each set of pixels further includes a first contact window 160 and a second contact window 17A. The first contact window 16 is located between the first pixel package 140e and the first l-shaped electrode i40d, so that the first pixel package MOe is electrically connected to the first 1-pole diode. The second contact window 170 is between the first halogen electrode 15〇e and the second L-shaped drain 15 such that the first halogen electrode 150e is electrically connected to the second electrode 150d. In another embodiment, the first gate 1 below the portion of the first l-shaped electrodeless pole 140d has a first opening in each set of cells, and the second L-shaped drain 15 in the portion of the second L-shaped drain 15 The second gate 15A below the 〇d has a second opening 19A. The portion referred to herein as a portion of the first l-shaped drain ^ refers to the portion of the first b-shaped dipole 140d that is greater than the first channel layer 140c. Similarly, part of the second L-shaped bungee is removed. In the embodiment, each group of halogens 100 further includes a -first capacitor and a second capacitor electrode 194. The first capacitor electrode 192 is located below the electrode 140e. The second capacitor electrode 194 is located below the second cassette. In the case of the actual sealing towel, the storage capacitor is formed on the common line (Cst on common). However, the present invention is not limited to the brittle capacitance of the age-old capacitor formed on the common line 17 200846800 22011twf.doc/p (Cstcm common). Moreover, the capacitance electrodes 192, 194 _ in the drawing are Η-shaped, but the system does not limit the shape of the ^^ pole, and other forms of the capacitor electrode can also be applied; In other embodiments, the structure of the storage capacitor may also be formed on the scan line (Cst 〇n gate). [Second Embodiment] Fig. 2 is a partial vocal diagram of a pixel array according to a second embodiment of the present invention, which is composed of a plurality of groups of pixels, and in Fig. 2 only a group of A pixel (consisting of two elementary units) is used to represent the system. Please Fig. 2, in this embodiment, each group of pixels 2 is driven by a scan line and a feed line 13G and a second data line 23 (). The scan line no extends along the horizontal X direction, and the first data line 13 squid second data line 230 extends in the vertical gamma direction. Each group consists of a singular-single-individual single 14G and a second halogen unit 25(). The first pixel unit 140 is the same as the first embodiment, and no further details are provided. In the second book, the unit 250 includes a second gate 25〇a, a second channel layer 25〇b, a second source 250c, a second L-shaped drain 25〇d, and a second pixel electrode. 250e. In more detail, the second gate 25A is electrically connected to the scanning line 11A. The second channel layer 250b is then located above the second gate 25A. The second source 250c is located above the second channel layer 250b and is connected to the second data line 23. The second L-shaped drain 250d is located 4 inches above the second channel layer 25A, wherein the L-shaped drain 250d and the first L-shaped drain I40d are mirror images. In addition, the second halogen electrode 25〇e is electrically connected to the second bipolar drain 250d. In this embodiment, if the horizontal χ direction exposure 18 200846800 / A ; W 22011twtdoc / p offset occurs during the manufacturing process, the first L-shaped drain 14 〇 d and the second L shape of the set of halogen elements 200 Since the drains 150d are in a mirror image relationship with each other, the variation of the parasitic capacitance (Cgd) between the gate and the drain in the first and second pixel units 140 and 250 can be made complementary to each other, thereby making the group of pixels The luminances of the two pixel units 140, 250 within each other compensate each other. In one embodiment, each set of halogens 200 further includes a first contact window 160 and a second contact window 270. The first contact window 16 is located between the first pixel turtle 140e and the younger L-shaped > and the pole 14〇d, so that the first pixel is 14 and the first L-shaped drain 140d is electrically connection. The second contact window 27 is located between the second halogen electrode 250e and the second L-shaped drain 250d to electrically connect the first nano-pole 250e to the second-pole and the second electrode 250d. In another embodiment, each of the sets of cells 2 has a first opening 18〇 in the first gate i4〇a below the first first-shaped drain 140d, and a second L-shaped portion There are two second openings 290 in the second gate 25〇a below the drain 250d. The portion of the first L-shaped drain M 〇 d referred to herein refers to a portion where the first L-shaped drain 140d overlaps the first channel layer 14 〇 c by ^. Similarly, a portion of the second L-shaped drain 25〇d below refers to a portion other than the region where the second L-shaped drain 250d overlaps the second channel layer 250c. In another embodiment, each set of halogens 200 further includes a first capacitor, 192, and a second capacitor electrode 294. The first capacitor electrode 192 is located below the first halogen electrode 140e. The second capacitor electrode 294 is located below the second book, electrode 25〇e. The storage capacitors shown in this embodiment belong to a storage capacitor formed on a common line (Cstonc〇mm〇n). Moreover, the shapes of the first and second capacitor electrodes 192, 294 shown in the drawings are 19 200846800 22011 twf.d〇c/p
UOlUi^^IIW 極的形狀作限定,其他種電 並非限定館存電容的架構為料’然而,本發明 on common)。在j:他告;子电谷形成於共通線(Cst 儲存電容形成於掃描線1 ^中’儲存電容的架構亦可為 【第三實施例】 π—0。 圖3為本發明第三實The UOlUi^^IIW pole shape is limited, and other types of electricity are not limited to the architecture of the library capacitor. However, the present invention is common. The structure of the storage capacitor is also formed in the common line (the Cst storage capacitor is formed in the scan line 1^). The third embodiment is π-0.
圖,此晝素陣列是由多*且 ,旦素陣列的局部不意 中-組晝素(由成’而在圖3中僅以其 圖3,在本實_,Τί綱。請參照 110盥篦-捃松治 、、且旦素300疋由一第一掃描線 線二斤=第-資細^ ί二—掃描線110與第二择描線120沿 m 乂乍延伸,而弟一資料、線130與第二資料線230 :延伸。每一組晝素300包括-第-晝素 =:夸:弟二晝素單元250、-第三晝素單元15〇以及 A =、早元36G。其中’第—晝素單元140與第-實 =之第—畫素單兀⑽相同、第二晝素單元㈣與第二 只施例之第二晝素單元25〇相同、第三晝素單元15〇與第 κ方U之第—晝素單元15〇相同,在此就不力口贅述。第 四晝素單元360包括一第四閘極36〇a、一第四通道層 360b、一第四源極360c、一第四L形汲極36〇d以及一 ^ 四晝素電極360e。第四閘極360a與第二掃描線120電性 連接,而第四通道層360b位於第四閘極36〇a上方。第四 源極360c位於第四通道層36〇b上方並與第二資料線23〇 電性連接。第四L形汲極360d位於第四通道層36〇b上方。 20 200846800rw 22011twf.doc/p 特別的是,第四L形汲極360d與第三L形汲極150d是呈 鏡像排列。另外,第四晝素電極360e與第四L形汲極360d 電性連接。 在本實施例中,若在製作過程中發生水平X方向曝光 偏移,此組晝素300中的第一 l形汲極140d與第二L形 没極250d以及第三L形没極l5〇d與第四L形没極360d 因為彼此是鏡像的形式,而且第一 L形没極l4〇d與第三L· 开>汲極150d以及第二L形没極250d與第四L形>及極360d 因為彼此是水平翻轉180度的形式的關係。因此使得此組 晝素300内第一、第二、第三與第四晝素單元14〇、25〇、 150與360的閘極與汲極間寄生電容(Cgd)的變動彼此互 補’進而使此組晝素内的四晝素單元、250、150、360 的輝度相互補償。 在二實施例中,每一組晝素300更包括一第一接觸窗 160、一第二接觸窗270、一第三接觸窗17〇以及一第四接 觸窗370。第一接觸窗16〇位於第一晝素電極M〇e與第一 L形汲極140d之間,以使第一晝素電極14〇e與第二^形 汲極140d電性連接。第二接觸窗27〇位於第二畫素電極 250=與第二L形汲極25〇d之間,以使第二晝素電極25如 與第二L形汲極250d電性連接。第三接觸窗17〇位於第 三晝素電極15〇e與第三L形汲極15〇d之間,以使第三晝 素電極15Ge與第三l形汲極15Gd電性連接。第四接觸窗 370位々於第四晝素電極36〇e與第四L形汲極36〇d之間, 以使第四畫素電極360e與第四L形汲極360d電性連接。 在另一實施例中,每一組畫素3〇〇於部分第一 L形汲 21 200846800 rw 220 Π tw£doc/p 極140d下方的第一閘極140a中具有一第一開口 1⑽,而 於部分第二L形汲極250d下方的第二閘極25〇a中具有一 弟二開口 290 ’又於部分弟二L形;及極i5〇d下方的第三閘 極150a中具有一第三開口 190,再於部分第四[形汲極 360d下方的弟四閘極360a中具有一第四開口 mo。這裡所 謂的部分第一 L形汲極140d下方指的是第一[形汲極 140d與第一通道層140c重疊區域以外的部分。同樣的, 邛为第一 L开>汲極150d下方指的是第二L形没極與 第二通道層150c重疊區域以外的部分,部分第三l形汲 極15〇d下方指的是第三L形沒極i5〇d與第三通^層⑼c 重疊區域以外的部分,部分第四L形汲極雇下方指的 是第四L形汲極360d與第四通道層36〇c重疊區 部分。 +振,二一實施例中’每一組晝素3。。更包括一第一電容 nm 紐294、—第三電容電極194 n -弟四電谷電極394。第-電容電極192位 極140e下方。第一雷交帝托,〇 旦常包 下方。第三電容弟電極 :t 394 t 竿才°然而’本發明並非限定儲存電容的 ==!容形成於共通線(Cst〇n 二的 在圖式中所警示的第―、第二 ^而且 294、194、394的开^^口五/弟—”弟四笔谷電極192、 22 200846800, υυ I υ 1 ^ 1W 22011twf.doc/p 明。此外’在其他實關巾,齡電容的架 電容形成於掃描線上(Cstongate)。 』為儲存 【第四實施例】 ^繪㈣本發明第四實施例之—種晝 = 由多組畫素所構成,而在= 夂由二個晝素料所構成)來代表說明。請 錄、圖4,在本實施例中,每—組晝素伽是由 』 41=以及-第一資料線42G與第二資料線422所驅動用並 中掃描線410沿著水平χ方向作延伸,而次立八 與第二資料線422則沿著垂直γ方向作延伸。^^圭420 4〇1包素括二第4一晝素單元以及—第二晝素單元^第 一晝素早兀430包括一第一閘極43〇a、_第一 ^ ^〇b、-第_雜43Ge、—第—驗彳观以及—第= 广閉極43〇a與掃描線41”性連接。; 通迢層430b位於第一閘極43〇a上方,且 430b沿-第—方向延伸,而第—源極條位於第一通& ^上巧广資料線420電性連接。第-汲極· 位於弟-通逼層邊上方。第一晝素電極條 、及 極4刪電性連接。另外,第二晝素單元432包括Ϊ第二閘 極432a、一第二通道層432b、一第二源極432c、一第二 =以及一第二畫素電極432e。第二閘極432a與; ==電性連接,而第二通道層概位於第二閘極他 …方。弟—通逼層432b沿_第二方向延伸,且第二方向與 :::向不相同。在一實施例中’第二方向與第一方向彼 “ 例如第一方向是X方向,而第二方向sy方向。 23 200846800 uo x w 2201 ltwf.doc/p 第二源極432c位於第二通道層432b上方並第二資料線 422電性連接。第二汲極432d位於第二通道層432b上方, 而第二晝素電極432e與第二汲極432d電性連接。In the figure, the pixel array is composed of multiple * and the partial array of the denier array is unintentional - composed of 'in the ' and in Figure 3 only in Figure 3, in the actual _, Τ 纲 。. Please refer to 110 盥篦-捃松治,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, 130 and second data line 230: extension. Each group of alizanes 300 includes -di- 昼 = =: 夸: brother dioxane unit 250, - third enthalpy unit 15 〇 and A =, early 36G. The first-dimensional element unit 140 is the same as the first-pixel element (10) of the first-th order, the second element unit (4) is the same as the second element unit of the second embodiment, and the third element unit 15 is the same. The 昼 is the same as the 昼 单元 单元 〇 〇 〇 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼The pole 360c, a fourth L-shaped drain 36〇d, and a quadrupole electrode 360e. The fourth gate 360a is electrically connected to the second scan line 120, and the fourth channel layer 360b is located at the fourth gate 36〇. a above. Fourth source 36 0c is located above the fourth channel layer 36〇b and electrically connected to the second data line 23. The fourth L-shaped drain 360d is located above the fourth channel layer 36〇b. 20 200846800rw 22011twf.doc/p In particular, The fourth L-shaped drain 360d and the third L-shaped drain 150d are arranged in a mirror image. In addition, the fourth halogen electrode 360e is electrically connected to the fourth L-shaped drain 360d. In this embodiment, if in the manufacturing process A horizontal X-direction exposure shift occurs in the first l-shaped drain 140d and the second L-shaped dipole 250d and the third L-shaped dipole l5〇d and the fourth L-shaped dipole 360d in the set of cells 300. Each is in the form of a mirror image, and the first L-shaped infinite pole l4〇d and the third L·opening>bungee 150d and the second L-shaped dipole 250d and the fourth L-shaped> and the pole 360d are horizontally flipped with each other The relationship of the form of 180 degrees. Therefore, the parasitic capacitance (Cgd) between the gate and the drain of the first, second, third, and fourth halogen units 14〇, 25〇, 150, and 360 in the group of cells 300 The variations are complementary to each other' and the luminances of the tetracycline units, 250, 150, 360 in the group of pixels are compensated for each other. In the second embodiment, each group of pixels 3 The 00 further includes a first contact window 160, a second contact window 270, a third contact window 17A, and a fourth contact window 370. The first contact window 16 is located at the first halogen electrode M〇e and the first Between the L-shaped drains 140d, the first halogen electrode 14〇e is electrically connected to the second-shaped drain electrode 140d. The second contact window 27〇 is located at the second pixel electrode 250=and the second L-shaped shape Between the electrodes 25〇d, the second halogen electrode 25 is electrically connected to the second L-shaped drain 250d. The third contact window 17 is located between the third halogen electrode 15〇e and the third L-shaped drain 15〇d to electrically connect the third germanium electrode 15Ge with the third 1-pole drain 15Gd. The fourth contact window 370 is disposed between the fourth halogen electrode 36〇e and the fourth L-shaped drain electrode 36dd to electrically connect the fourth pixel electrode 360e with the fourth L-shaped drain electrode 360d. In another embodiment, each set of pixels has a first opening 1 (10) in the first gate 140a below the portion of the first L-shaped 200821 200846800 rw 220 Π tw£doc/p pole 140d, and The second gate 25〇a below the second L-shaped drain 250d has a second opening 290' and a partial second L-shaped; and a third gate 150a below the pole i5〇d has a first The three openings 190 have a fourth opening mo in the fourth fourth gate electrode 360a below the fourth [shaped drain 360d. The portion of the first L-shaped drain 140d referred to herein is referred to as the first portion of the first [shaped drain 140d overlapping the first channel layer 140c. Similarly, 邛 is the first L open > the bottom of the drain 150d refers to a portion other than the area where the second L-shaped dipole overlaps with the second channel layer 150c, and some of the third l-shaped drain 15 〇d refers to A portion other than the overlapping area of the third L-shaped dipole i5〇d and the third pass layer (9)c, and a portion of the fourth L-shaped bungee is referred to as the fourth L-shaped drain 360d overlaps with the fourth channel layer 36〇c District section. +Vibration, in the two embodiment, 'each group of alizarins 3. . Furthermore, a first capacitor nm 294, a third capacitor electrode 194 n - a fourth voltage electrode 394 are included. The first capacitor electrode 192 is below the bit 140e. The first thunder was placed in the emperor, and it was often included below. The third capacitor is the electrode: t 394 t 然而 ° However, 'the invention is not limited to the storage capacitor ==! The capacitance is formed in the common line (Cst〇n two in the figure warned the first, second ^ and 294 , 194, 394 open ^ ^ mouth five / brother - "di brother four pen electrode 192, 22 200846800, υυ I υ 1 ^ 1W 22011twf.doc / p Ming. In addition, in other real cleaning towel, age capacitor frame capacitance Formed on the scan line (Cstongate). 』For storage [Fourth embodiment] ^Drawing (d) The fourth embodiment of the present invention - the species 昼 = consists of multiple sets of pixels, and at = 夂 by two bismuth materials In the present embodiment, each group of gamma gamma is driven by the "41" and - the first data line 42G and the second data line 422, and the scanning line 410 is used. Extending along the horizontal χ direction, while the secondary VIII and the second data line 422 extend along the vertical γ direction. ^^圭 420 4〇1 package includes the 4th unit and the second element The unit first 430 includes a first gate 43 〇 a, _ first ^ ^ 〇 b, - _ _ 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 The scan line 41 is connected in a sexual manner. The pass layer 430b is located above the first gate 43A, and the 430b extends in the -first direction, and the first source strip is electrically connected to the first pass & The first - bungee is located above the side of the brother-pushing layer. The first halogen electrode strip and the pole 4 are electrically connected. In addition, the second pixel unit 432 includes a second gate 432a, a second channel layer 432b, a second source 432c, a second = and a second pixel electrode 432e. The second gate 432a is electrically connected to ===, and the second channel layer is located on the second gate. The pass-through layer 432b extends in the second direction, and the second direction is different from the ::: direction. In an embodiment, the 'second direction and the first direction' are, for example, the first direction is the X direction, and the second direction is the sy direction. 23 200846800 uo xw 2201 ltwf.doc/p The second source 432c is located in the second channel layer Above the 432b, the second data line 422 is electrically connected. The second drain 432d is located above the second channel layer 432b, and the second halogen electrode 432e is electrically connected to the second drain 432d.
在本實施例中,若在製作過程中發生曝光偏移,由於 此組晝素400中第一通道層430b與第二通道層432b分別 沿著第一方向與第二方向作延伸,因此當製程中曝光有χ 方向偏移時,雖然第二畫素單元432的Cgd會產生變動, 但第一晝素單元430的Cgd不會產生變動。因此,相較於 傳統晝素陣列的設計,本實施例之晝素陣列可以減少一半 Cgd的變動,進而改善液晶顯示面板品質。 隹方一貫施例中 ^ 、、几旦牙、寸…又匕秸一第一接觸 自440以及一第二接觸窗442。第一接觸窗44〇位於第— 旦素電極430e與苐一>及極43〇d之間,以使第一書素電極 430e與第一汲極430d電性連接。第二接觸窗44f位於 一晝素包極4326與第二汲極432d之間,以使第二書夸帝 極432e與第二〉及極432d電性連接。 ^ 在另-實施例中,每一組晝素4〇〇更包括一恭六 電極45〇以及一第二電容電極452。其中,第—電= 450位於第一晝素電極條下方,而第二電 = 於^二晝素電極432e下方。在本實施例巾,所♦ / 電容的架構屬於儲存電容形成於共通綠上子 。而且,在圖式中所繪示的第 ^二 450、452的形狀是Η形,但本發明並不對電 作限定’其他種電容電極的形式亦可#的形狀 外,在其他實施例中,储存電容的架_可為 24 200846800 ^biuuyixw 22011twf.doc/p 成於掃描線上(Cst on gate)。 【弟五實施例】 一立圖5繪示為本發明第五實施例之一種晝素陣列的局部 示意圖,此晝素陣列是由多組晝素所構成,而在圖5 其中一組畫素(由四個晝素單元所構成)來代表說明。 -月參照圖5,在本實施例中,每一組晝素5⑻是一第一 描、=410、一第二掃描線412、一第一資料線42〇以及一第 二資料線422所驅動。每一組晝素5〇〇包括一第一查素抑 » S43G、-第二晝素單元432、一第三晝素單元434二j 四^素單元436。第一晝素單元430以及第二晝素單元432 與第四實施例所述之第一與第二晝素單元43〇、432相同, 因此不再資述。 第二畫素單元434包括一第三閘極434a、一第三通道 層434b、一第三源極434c、一第三汲極434d和一 ^三苎 素,極434e。第三閘極434a與第二掃描線412電性連接"; 而第三通道層434b位於第一閘極430a上方,且第一通道 層430b沿第二方向延伸。第三源極434()位於第一通道層 430b上方並與第一資料線42〇電性連接。第三汲極衫如 位於第二通道層434b上方,而第三晝素電極434e與第一 /及極430d電性連接。另外,第四晝素單元436包括一第四 閘極436a、一第四通道層436b、一第四源極436c、一第 =汲巧436d以及一第四晝素電極436e。第四閘極436&與 第二掃描線412電性連接。第四通道層436b位於第四閘極 436a上方,其中第四通道層436b沿第一方向延伸。在一 實施例中,第二方向與第一方向彼此垂直,例如第一方向 25 i TW 22011twf.doc/p 200846800 是X方向,而第二方向是Y方向。第四源極436c位於第 四通返層436b上方並與第二資料線422電性連接。第四汲 極436d位於第四通道層436b上方。第四晝素電極幻化 與第四汲極436d電性連接。 在本實施例中,若在製作過程中發生曝光偏移,由於 此組畫素500中第一通道層43〇b與第三通道層43仆沿著 第:方向作延伸,而第二通道層432b與第四通道層43邰 、沿著與第-方向垂直的第二方向作延伸。因此當製程中曝 光有X方向偏移B守,雖然第二晝素單元432與第三書素單 元=4的Cgd會產生變動,但第一晝素單元43〇與第四晝 素單元436的Cgd不會產生變動。因此,相較於傳統畫素 陣列的設計,本實施例之晝素陣列可以減少一半Cgd的變 動,進而改善液晶顯示面板品質。 在另一實施例中,每一組晝素500更包括一第三接觸 窗444與一第四接觸窗446。其中第三接觸窗444位於第 —畫素電極434e與弟三没極434d之間,以使第三書素電 • 極f4e與第三汲極43牝電性連接,而第四接觸窗446 ^ 於第四畫素電極436e與第四汲極436d之間,以使第四書 素電極436e與第四汲極436d電性連接。 一 在另一實施例中,每一組晝素500更包括一第三電容 ,極454與一第四電容電極456。第三電容電極454位於 第三晝素電極434e下方。第四電容電極456位於第四晝素 電極436e下方。在本實施例中,所繪示的儲存電容的^構 屬於儲存電容形成於共通線上(Cstonc〇mm〇n)。而且, 在圖式中所繪示的第三與第四電容電極454、456的形狀是 26 rw 2201Itwf.d〇c/p 200846800, 明亚不對電容電極的形狀作限定,i他種+ „形式亦可以應用於本發明。此外 以種二 =電容的架構亦可為館存電容形成於掃描 = 【第六實施例】 圖6緣示為本發明第六實施例之一種書 =二《素_是由多組晝素所構成7而== ^ ’、Μ晝素(由二個晝素單摘魏)來代表說明。 =照圖6,在本實施例中,每一組畫素_是卜In this embodiment, if the exposure offset occurs during the manufacturing process, since the first channel layer 430b and the second channel layer 432b of the group of pixels 400 extend along the first direction and the second direction, respectively, When the medium exposure has a 方向 direction shift, although the Cgd of the second pixel unit 432 changes, the Cgd of the first pixel unit 430 does not change. Therefore, compared with the design of the conventional halogen array, the pixel array of the present embodiment can reduce the variation of Cgd by half, thereby improving the quality of the liquid crystal display panel. In the consistent application of the 隹方, ^, a few dentures, inches... and a first contact with 440 and a second contact window 442. The first contact window 44 is located between the first-donor electrode 430e and the first and second electrodes 430e to electrically connect the first pixel electrode 430e with the first drain 430d. The second contact window 44f is located between the cell cover 4326 and the second drain 432d, so that the second book 413e is electrically connected to the second and fourth electrodes 432d. In another embodiment, each set of cells 4 includes a sixth electrode 45 〇 and a second capacitor electrode 452. Wherein, the first electricity = 450 is located below the first halogen electrode strip, and the second electricity = is below the dioxane electrode 432e. In the embodiment of the invention, the structure of the ♦ / capacitor belongs to a storage capacitor formed on a common green neutron. Moreover, the shape of the second 450, 452 is shown in the figure as a dome shape, but the present invention does not limit the shape of the other capacitor electrode to the shape of #, in other embodiments, The storage capacitor rack _ can be 24 200846800 ^biuuyixw 22011twf.doc / p on the scan line (Cst on gate). [Embodiment 5] FIG. 5 is a partial schematic view showing a pixel array according to a fifth embodiment of the present invention. The pixel array is composed of a plurality of groups of pixels, and in FIG. 5, a group of pixels (consisting of four elementary units) to represent the description. Referring to FIG. 5, in this embodiment, each group of pixels 5 (8) is driven by a first trace, = 410, a second scan line 412, a first data line 42A, and a second data line 422. . Each set of halogens includes a first checksum S43G, a second halogen element 432, a third halogen unit 434, and a second unit 436. The first pixel unit 430 and the second pixel unit 432 are the same as the first and second pixel units 43A and 432 described in the fourth embodiment, and therefore will not be described. The second pixel unit 434 includes a third gate 434a, a third channel layer 434b, a third source 434c, a third drain 434d, and a triad, pole 434e. The third gate 434a is electrically connected to the second scan line 412; and the third channel layer 434b is located above the first gate 430a, and the first channel layer 430b extends in the second direction. The third source 434() is located above the first channel layer 430b and is electrically connected to the first data line 42. The third flip-flop is placed above the second channel layer 434b, and the third halogen electrode 434e is electrically connected to the first/pole 430d. In addition, the fourth pixel unit 436 includes a fourth gate 436a, a fourth channel layer 436b, a fourth source 436c, a first 436d, and a fourth halogen electrode 436e. The fourth gate 436 & is electrically connected to the second scan line 412. The fourth channel layer 436b is located above the fourth gate 436a, wherein the fourth channel layer 436b extends in the first direction. In an embodiment, the second direction is perpendicular to the first direction, for example, the first direction 25 i TW 22011twf.doc/p 200846800 is the X direction and the second direction is the Y direction. The fourth source 436c is located above the fourth pass layer 436b and is electrically connected to the second data line 422. The fourth drain 436d is located above the fourth channel layer 436b. The fourth halogen electrode is electrically connected to the fourth drain 436d. In this embodiment, if the exposure shift occurs during the manufacturing process, since the first channel layer 43〇b and the third channel layer 43 of the group of pixels 500 extend along the first direction, the second channel layer The 432b and the fourth channel layer 43 are extended in a second direction perpendicular to the first direction. Therefore, when the exposure in the process has an X-direction offset B, although the Cgd of the second pixel unit 432 and the third pixel unit=4 may vary, the first pixel unit 43〇 and the fourth pixel unit 436 Cgd will not change. Therefore, compared with the design of the conventional pixel array, the pixel array of the present embodiment can reduce the variation of Cgd by half, thereby improving the quality of the liquid crystal display panel. In another embodiment, each set of halogens 500 further includes a third contact window 444 and a fourth contact window 446. The third contact window 444 is located between the first pixel electrode 434e and the third electrode 434d, so that the third pixel electrode f4e is electrically connected to the third electrode 43牝, and the fourth contact window 446^ Between the fourth pixel electrode 436e and the fourth drain 436d, the fourth pixel electrode 436e and the fourth drain 436d are electrically connected. In another embodiment, each set of halogens 500 further includes a third capacitor, a pole 454 and a fourth capacitor electrode 456. The third capacitor electrode 454 is located below the third halogen electrode 434e. The fourth capacitor electrode 456 is located below the fourth halogen electrode 436e. In this embodiment, the storage capacitor is formed so that the storage capacitor is formed on a common line (Cstonc〇mm〇n). Moreover, the shapes of the third and fourth capacitor electrodes 454, 456 shown in the drawings are 26 rw 2201Itwf.d〇c/p 200846800, and Mingya does not limit the shape of the capacitor electrode, i is a species + „form It can also be applied to the present invention. In addition, the structure of the second type of capacitor can also be formed in the scan for the storage capacitor = [Sixth embodiment] FIG. 6 is a book of the sixth embodiment of the present invention. It is composed of a plurality of groups of alizae 7 and == ^ ', and alizarin (different from two alizarins) to represent the explanation. = Figure 6, in this embodiment, each group of pixels is Bu
Hi一第一資料線520與第二資料線切所驅動r 母一組晝素議包括一第—晝素單元530與—第單 元532。第一畫素單元53〇包括一第一間極5地二第= =:30b、—第;源極53〇c、一第一汲極5观與一第 —旦素電極53Ge。第-閘極5地與掃描線別電性連接。 弟-通道層530b位於第-閘極5施上方 位於第-通道層通上方並與第—資料線52〇電性連接二 弟-汲極530d位於第-通道層53〇b上方。帛一畫素電極 530e與第一汲極530d電性連接。另 包括-第二閘極伽、-第二通道層532br一素 532c、一第二汲極532d與一第二晝素電極532e。第二閘 極532a與掃描線510電性連接。第二通道層532b位於第 一閘極532a上方。第二源極532C位於第二通道層532b 上方並與第二資料線522電性連接。第二汲極532d位於第 一通道層532b上方。第二晝素電極532e與第二没極532d 電性連接。值得注意的是,上述第一晝素單元53〇之結構 27 Γ W 2201 ltwf.doc/p 200846800 與第二晝素單元532之結構是呈鏡像排列。 在本貝把例中,若在製作過程中發生水平X方向曝光 偏移,此組晝素600中的第一晝素單元53〇與第二晝素單 元532之因為彼此是鏡像的形式關係,因此可以使得第一 與第二晝素單元530、532内的閘極與沒極間寄生電容 (cgd)的變動彼此互補,進而使此組畫素6〇〇内的兩晝 素單元530、532的輝度相互補償。 在一實施例中,每-組畫素600更包括一第一 540與一第二接觸窗542。第一接觸窗54〇位於第一晝素帝 =30e與第-沒極53〇d之間,以使第一晝素電 與弟一沒極530d電性連接。第二接觸^ 542餘第二 =532e與第二没極532d之間,以使第二晝素電極似 與第二汲極532d電性連接。 在另-實施例中,每一組晝素600更包括 =別;;;第二電容電極552。其中第一電容電極: 552 =架電容形成於錢V上(cirrr;電 而且,在圖式中_示的第—與第二電 的形狀是Η形,但本發明並不對 雜 p 其他種電容電_形式村以_於树日ΓΓΓΐ发 雜構㈣物容形成於= 【第七實施例】 圖7繪示為本發明第七實施例之一種畫素陣列的局部 28 200846800 uo 1U1 jyi rw 2201 ltwf.doc/p 示意圖,此晝素陣列是由多組畫素所構成,而在圖7中僅 以其中一組晝素(由二晝素單元所構成)來代表說明。請參 照圖7,在本實施例中,每一組晝素7〇〇是由一第一掃描 線410與第二掃描線612以及一資料線42〇所驅動,而每 一組晝素700包括一第一晝素單元430與一第二晝素單元 630。其中’本實施例之第一晝素單元“ο與第四實施例 430類似,因此不再贅述。第二晝素單元63〇包括一第二 閘極630a、一第二通道層630b、一第二源極63〇c、一第 藝 二汲極630d與一第二晝素電極630e。第二閘極630a與第 二掃描線612電性連接,而第二源極63〇c與第一資料線 420電性連接。特別的是,第二晝素單元63()之結構是與 弟一晝素單元430呈鏡向排列。 在本實施例中,若在製作過程中發生垂直Υ方向曝光 偏移時,此每一組畫素700中的第一畫素單元430與第二 晝素單元630因為彼此是鏡像的形式關係,因此可以使得 第一與第二畫素單元430、630内的閘極與汲極間寄生電容 魯 (Cgd)的變動彼此互補,進而使此組晝素7〇〇内的兩晝 素單元430、630的輝度相互補償。 在一實施例中,每一組晝素700更包括一第一接觸窗 440與一第二接觸窗64〇。第一接觸窗44〇位於第一晝素電 極二30e與第一汲極430d之間,以使第一晝素電極43〇e 與第一汲極430d電性連接。第二接觸窗64〇位於第二晝素 電極630e與第二汲極630d之間,以使第二晝素電極eo'e 與第二没極630d電性連接。 在另一實施例中,每一組晝素7〇()更包括一第一電容 29 200846800, …x v x 〜A A W 22011twf.doc/p 電極450與一第二電容電極65〇。其中第—+ 位於第一晝素電極他下方。而第二電容電^^極450’ 第二畫素電極63Ge下方。在本實施例中,崎示 容的架構屬於儲存電容形成於共通線上子電 cornnum)。而且,在圖式中所繪示的第一與 450、650的形狀是1!形,但本發明並不對雷办二二谷电極 作限定,其他種電容電極的形式亦可以應形:The Hi-first data line 520 and the second data line switch drive the r-mother group to include a first-single element 530 and a first unit 532. The first pixel unit 53A includes a first interpole 5, a second ==:30b, a first source, a source 53〇c, a first drain 5 and a first-pixel electrode 53Ge. The first gate 5 is electrically connected to the scan line. The channel-layer 530b is located above the first-gate layer 5 and is electrically connected to the first-channel line 52 and is located above the first channel layer 53A. The first pixel electrode 530e is electrically connected to the first drain 530d. Further, a second gate galvanic, a second channel layer 532br 532c, a second drain 532d and a second halogen electrode 532e are included. The second gate 532a is electrically connected to the scan line 510. The second channel layer 532b is located above the first gate 532a. The second source 532C is located above the second channel layer 532b and is electrically connected to the second data line 522. The second drain 532d is located above the first channel layer 532b. The second halogen electrode 532e is electrically connected to the second electrode 532d. It is to be noted that the structure of the first halogen unit 53 27 W 2201 ltwf.doc/p 200846800 and the structure of the second pixel unit 532 are arranged in a mirror image. In the example of the present invention, if the horizontal X-direction exposure shift occurs during the manufacturing process, the first pixel unit 53 〇 and the second pixel unit 532 of the set of pixels 600 are in a mirror image relationship with each other. Therefore, the fluctuations of the gate and the parasitic capacitance (cgd) between the first and second pixel units 530 and 532 can be made complementary to each other, thereby making the two pixel units 530 and 532 in the group of pixels 6〇〇. The luminance is compensated for each other. In one embodiment, each set of pixels 600 further includes a first 540 and a second contact window 542. The first contact window 54 is located between the first 昼素帝=30e and the first-nothing pole 53〇d, so that the first halogen electricity is electrically connected to the first 530d. The second contact 542 is between the second = 532e and the second non-polar 532d, so that the second halogen electrode is electrically connected to the second drain 532d. In another embodiment, each set of halogens 600 further includes a second capacitor electrode 552. Wherein the first capacitor electrode: 552 = the frame capacitor is formed on the money V (cirrr; electricity and, in the figure, the first and second electric shapes are Η-shaped, but the invention is not for the hetero-p other kinds of capacitors The electric_form village is formed by the _Yushu ΓΓΓΐ ΓΓΓΐ ( 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 = = = = = = = = = = 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 Ltwf.doc/p Schematic, this pixel array is composed of multiple groups of pixels, and only one group of pixels (consisting of dioxad units) is represented in Fig. 7. Please refer to Fig. 7. In this embodiment, each set of cells 7 is driven by a first scan line 410 and a second scan line 612 and a data line 42, and each set of cells 700 includes a first pixel. The unit 430 and a second pixel unit 630. The first pixel unit of the present embodiment is similar to the fourth embodiment 430, and therefore will not be described again. The second pixel unit 63 includes a second gate. 630a, a second channel layer 630b, a second source 63〇c, a second diode 630d and a second halogen electrode 630e. The second gate 630a is electrically connected to the second scan line 612, and the second source 63〇c is electrically connected to the first data line 420. In particular, the structure of the second pixel unit 63() is The unitary unit 430 is arranged in a mirror direction. In the embodiment, if the vertical pupil direction exposure shift occurs during the manufacturing process, the first pixel unit 430 and the second pixel element in each group of pixels 700 are arranged. Since the cells 630 are in a mirror image relationship, the variation of the parasitic capacitance (Cgd) between the gate and the drain in the first and second pixel units 430 and 630 can be made complementary to each other, thereby making the group of cells 7 The luminances of the two pixel units 430 and 630 in the crucible are mutually compensated. In one embodiment, each set of halogens 700 further includes a first contact window 440 and a second contact window 64. The first contact window 44 The 〇 is located between the first halogen electrode 2e and the first drain 430d, so that the first halogen electrode 43〇e is electrically connected to the first drain 430d. The second contact window 64 is located at the second halogen electrode Between the 630e and the second drain 630d, the second halogen electrode eo'e is electrically connected to the second pole 630d. In the embodiment, each set of cells 7 〇 () further includes a first capacitor 29 200846800, ... xvx 〜 AW 22011 twf. doc / p electrode 450 and a second capacitor electrode 65 〇. wherein - +1 is located in the first 昼The second electrode is below the second pixel electrode 63Ge. In the present embodiment, the structure of the display capacitor belongs to the storage capacitor formed on the common line of the transistor (cornnum). Moreover, in the figure The shape of the first and 450, 650 shown in the formula is a 1! shape, but the present invention does not limit the electrode of the Leibao two-two valley, and other forms of the capacitor electrode can also be shaped:
^卜^其他實補中,畴電容㈣構_==二 成於掃描線上(Cst on gate)。 ^ 综上所述,本發明之晝素陣列至少具有下列優點. 去由iti明中的—些畫素陣列設計中,是將每一組的晝 之汲紐計成具有鏡像翻或是水平_ 又的形式,或是將每一組晝素中的晝素八呈 ==式。上述之設計都可以使得在製作晝素ί列結構 的過私中,即使發生曝光偏移時,因每—組書 ,的特殊排列設計’因而能使閘極與^間寄^容 的變動彼此互補,進而能使每—晝素組中的晝素 =母個晝素結構產生之輝度可以相互作補償。因此,利 2發明之晝素_晶麻面板也將具有良好 品質。 2.本發明中的另—些晝素陣列設計中,是將每一組的 旦素中的晝素單元的通道層作*同方向之延伸。因此可以 ,低製造過程中,@曝光之偏移量對晝素顯示的影響,使 知生產出的液晶顯示面板品質較佳。 雖然本發明已以較佳實施例揭露如上,然其並非用以 30 200846800 0610139ITW 22011twf.doc/p 限定本發明,任何熟習此技藝者,在不脫離本發明之精神 和範圍内,當可作些許之更動與潤飾,因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1繪示為本發明之第一實施例的一種晝素陣列示意 圖。 圖2 %示為本發明之第二實施例的一種晝素陣列示咅 ° 圖3繪示為本發明之第三實施例的一種晝素陣列示竟 〇 圖4繪示為本發明之第四實施例的一種晝素陣列示竟 ° 一圖5繪示為本發明第五實施例之一種晝素陣列的局 示意圖 ϋ 圖6繪示為本發明之第五實施例的一種晝素陣列示意 圖〇 ♦ @7繪示為本發明之第六實施例的—種晝素陣列示意 圖〇 【主要元件符號說明】 100、200、300、400、500、600、700 :單一組晝素 410、510 :掃描線 一 ” 110 :第一掃描線 120、412、612 :第二掃描線 132 :資料線 31^ Bu ^ other real complement, domain capacitance (four) construction _ = = two on the scan line (Cst on gate). In summary, the pixel array of the present invention has at least the following advantages. In the design of some pixel arrays by iti, it is to calculate the 汲 汲 每一 每一 每一 或是 或是 或是 或是 或是 或是 或是In another form, or the singularity of each group of elements is ==. The above design can make the design of the special arrangement of each group of books in the over-election of the structure of the pixel structure, so that the variation between the gate and the gate can be changed to each other. Complementary, in turn, can make the luminance generated by the alizarin=parent element structure in each group of alizarins compensate each other. Therefore, the 昼 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶2. In another halogen matrix design of the present invention, the channel layers of the halogen units in each group of dendrites are extended in the same direction. Therefore, in the low manufacturing process, the influence of the @exposure offset on the display of the halogen can make the quality of the liquid crystal display panel produced better. Although the present invention has been disclosed in the preferred embodiments as described above, it is not intended to be limited to the scope of the present invention, and may be made by those skilled in the art without departing from the spirit and scope of the invention. The scope of protection of the present invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a pixel array according to a first embodiment of the present invention. 2 is a second embodiment of the present invention. FIG. 3 is a diagram showing a fourth embodiment of the present invention. FIG. 3 is a fourth embodiment of the present invention. FIG. FIG. 6 is a schematic diagram of a pixel array according to a fifth embodiment of the present invention. FIG. 6 is a schematic diagram of a pixel array according to a fifth embodiment of the present invention. FIG. ♦ @7 is a schematic diagram of a halogen element array according to a sixth embodiment of the present invention. [Main component symbol description] 100, 200, 300, 400, 500, 600, 700: Single group of elements 410, 510: scanning Line one" 110: first scan line 120, 412, 612: second scan line 132: data line 31
/ JL \J rw 22011twfdoc/p 130、420、520 230、422、522 140、430、530 第一資料線 第二資料線 第一晝素單元 140a、430a、530a :第一閘極 140b、430b、530b :第一通道層 140c、430c、530c :第一源極 140d、430d、530d :第一 L 形汲極 140e、430e、530e :第一晝素電極 • 150、250、432、532、630 :第二晝素單元 150a、250a、432a、532a、630a :第二閘極 150b、250b、432b、532b、630b :第二通道層 150c、250c、432c、532c、630c :第二源極 150d、250d、432d、532d、630d ··第二 L 形汲極 150e、250e、432e、532e、630e :第二晝素電極 434 :第三晝素單元 434a :第三閘極 ^ 434b :第三通道層 434c ··第三源極 434d :第三汲極 434e ··第三晝素電極 360、436 :第四晝素單元 360a、436a ··第四閘極 360b、436b :第四通道層 360c、436c :第四源極 360d、436d :第四L形汲極 32 200846800 uuiuuyiFW 2201 ltwf.doc/p 360e、436e ··第四晝素電極 160、440、540 :第一接觸窗 170、270、442、542、640 :第二接觸窗 444 :第三接觸窗 370、446 :第四接觸窗 180 :第一開口 190、290 :第二開口 192、450、550 :第一電容電極 • 194、294、452、552、650 :第二電容電極 454 ··第三電容電極 394、456 ··第四電容電極/ JL \ J rw 22011twfdoc / p 130, 420, 520 230, 422, 522 140, 430, 530 first data line second data line first pixel unit 140a, 430a, 530a: first gate 140b, 430b, 530b: first channel layer 140c, 430c, 530c: first source 140d, 430d, 530d: first L-shaped drain 140e, 430e, 530e: first halogen electrode • 150, 250, 432, 532, 630: Second halogen unit 150a, 250a, 432a, 532a, 630a: second gate 150b, 250b, 432b, 532b, 630b: second channel layer 150c, 250c, 432c, 532c, 630c: second source 150d, 250d , 432d, 532d, 630d · · second L-shaped drain 150e, 250e, 432e, 532e, 630e: second halogen electrode 434: third halogen unit 434a: third gate ^ 434b: third channel layer 434c • Third source 434d: Third drain 434e • Third halogen electrode 360, 436: Fourth halogen unit 360a, 436a • Fourth gate 360b, 436b: Fourth channel layer 360c, 436c: Fourth source 360d, 436d: fourth L-shaped drain 32 200846800 uuiuuyiFW 2201 ltwf.doc/p 360e, 436e · Fourth halogen electrode 160, 440, 540: first contact window 170 270, 442, 542, 640: second contact window 444: third contact window 370, 446: fourth contact window 180: first opening 190, 290: second opening 192, 450, 550: first capacitive electrode • 194 294, 452, 552, 650: second capacitor electrode 454 · third capacitor electrode 394, 456 · · fourth capacitor electrode
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW96118194A TWI345670B (en) | 2007-05-22 | 2007-05-22 | Pixel array |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW96118194A TWI345670B (en) | 2007-05-22 | 2007-05-22 | Pixel array |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200846800A true TW200846800A (en) | 2008-12-01 |
TWI345670B TWI345670B (en) | 2011-07-21 |
Family
ID=44823320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW96118194A TWI345670B (en) | 2007-05-22 | 2007-05-22 | Pixel array |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI345670B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI393977B (en) * | 2009-06-24 | 2013-04-21 | Chunghwa Picture Tubes Ltd | Pixel set |
TWI406074B (en) * | 2010-05-03 | 2013-08-21 | Au Optronics Corp | Active device array substrate |
TWI629546B (en) * | 2016-02-05 | 2018-07-11 | 瀚宇彩晶股份有限公司 | Liquid crystal display device and pixel structure thereof |
-
2007
- 2007-05-22 TW TW96118194A patent/TWI345670B/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI393977B (en) * | 2009-06-24 | 2013-04-21 | Chunghwa Picture Tubes Ltd | Pixel set |
TWI406074B (en) * | 2010-05-03 | 2013-08-21 | Au Optronics Corp | Active device array substrate |
TWI629546B (en) * | 2016-02-05 | 2018-07-11 | 瀚宇彩晶股份有限公司 | Liquid crystal display device and pixel structure thereof |
Also Published As
Publication number | Publication date |
---|---|
TWI345670B (en) | 2011-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1229668C (en) | Substrate devices, its test methods, photoelectric devices and manufacturing methods thereof | |
JP4367542B2 (en) | Electro-optical device and electronic apparatus | |
JP4813621B2 (en) | Active matrix substrate, display device, active matrix substrate inspection method, and display device inspection method | |
JP5114544B2 (en) | Display device | |
TWI854342B (en) | Display device | |
KR101113476B1 (en) | Liquid Crystal Display | |
CN1800917B (en) | Array substrate and display panel having same | |
CN1901167A (en) | Semiconductor device and method of manufacturing thereof | |
TWI432860B (en) | Pixel structure | |
US20110057679A1 (en) | Liquid crystal display device with data switching thin film transistor for inspection and inspection method thereof | |
CN1854831A (en) | LCD Monitor | |
CN1956224A (en) | Improved Thin Film Transistor | |
CN102569308A (en) | Pixel array substrate structure, method of manufacturing pixel array substrate structure, display device, and electronic apparatus | |
TWI384306B (en) | Liquid crystal display | |
CN1308311A (en) | Semiconductor device and its drive method | |
CN110176552A (en) | The method for showing equipment and manufacture display equipment | |
TW200846800A (en) | Pixel array | |
JP3648976B2 (en) | Active matrix substrate, liquid crystal device, electronic apparatus, and inspection method of active matrix substrate | |
CN101315937A (en) | pixel array | |
JP2007140435A (en) | Thin film transistor array, transflective thin film transistor liquid crystal display, lcd device, and electronic device | |
JP2007011283A (en) | Electro-optical device, method of driving electro-optical device, and electronic apparatus | |
CN1334549A (en) | Display device drive method, drive circuit, display device and electronic device | |
TW200912430A (en) | Liquid crystal display panel | |
JP3966326B2 (en) | Inspection method for active matrix substrate | |
JP4128588B2 (en) | Liquid crystal display |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |