TW200844671A - Exposure apparatus - Google Patents

Abstract

An exposure apparatus exposes each of a plurality of regions arranged on a substrate. The apparatus includes a processor configured to (i) cause a measurement device to acquire an image signal of an alignment mark formed in each of plural regions which are at least a part of the plurality of regions and to measure a position of the alignment mark under a plurality of measurement conditions, (ii) calculate a feature value of the signal acquired with respect to each of the plural regions under each of the plurality of measurement conditions, and (iii) calculate, with respect to each of the plurality of measurement conditions, a coefficient of a transformation equation which transforms a coordinate of a designed position of the alignment mark to a value that approximate the feature value corresponding to the designed position, and a console configured to display information of the calculated coefficients.

Description

200844671 IX. Description of the Invention [Technical Field] The present invention relates to an exposure apparatus for exposing a substrate to radiant energy. [Prior Art] As the micro-patterning and the density of the circuit increase, an exposure apparatus for manufacturing a semiconductor device is required, and the circuit pattern is projected onto the surface of the substrate by exposure from the surface of the mask, and has higher resolution. . The projection resolution capability of the circuit pattern depends on the number of apertures (NA) and exposure wavelengths of the projection optics. In view of this, the resolution is increased by a method of increasing the NA of the projection optical system and a method of further shortening the exposure wavelength. In the method of further shortening the exposure wavelength, the wavelength of the exposure light source is shifted from the g line to the i line and from the i line to the oscillation wavelength of the excimer laser. An exposure apparatus having a pseudo-molecular laser having an oscillation wavelength of 248 nm and 193 nm has been practically used. Now, exposure schemes using EUV (ultraviolet) light with a wavelength of 13 nm are considered as candidates for next-generation exposure schemes. At the same time, semiconductor device manufacturing processes are diversifying. For example, the chemical mechanical polishing (CMP) process has received a lot of attention as a planarization technique that addresses the depth of the focus of the exposure apparatus. Various structures and materials of semiconductor devices are also suggested. An example of a P high electron mobility transistor and a high electron mobility transistor formed by combining a chemical compound such as GaAs and InP and a heterojunction bipolar transistor made of, for example, SiGe and SiGe. With the micropatterning of circuits, another need has arisen for accurately correcting the reticle and projected substrate of the formed -4 - 44,444,671 circuit pattern. The required correction accuracy is 1/3 of the circuit line width. For example, the required correction accuracy for the current 9 〇 nm design is 1/3, that is, 30 nm. Unfortunately, substrate alignment often causes wafer induced displacement of the substrate during fabrication, resulting in a reduction in the performance of the semiconductor device and its manufacturing throughput. For this specification, the wafer sense shift will be referred to as "WIS." An example of WIS is the asymmetry of the structure of the calibration mark and the asymmetry of the shape of the resist applied to the substrate due to the influence of the planarization process such as CMP. Moreover, because of the semiconductor devices fabricated via several processes, the optical conditions of the calibration marks for each process change, resulting in a change in the amount of WIS for each process. To deal with this problem, it is necessary to prepare complex quantitative conditions for multiple corrections to determine the optimal measurement conditions for each process. For conventional substrate correction, the substrate is subjected to actual exposure under complex measurement conditions and under overlapping inspection to determine the measurement conditions for the best results of the overlap check obtained. However, this method takes a long time to determine the measurement conditions. Japanese Patent Laid-Open Publication No. 4-322 No. 9 proposes a method of determining the measurement condition, which uses "asymmetry obtained by quantifying the calibration mark signal or comparison" as an index without overlapping inspection. In this specification, a feature associated with calculating the measurement accuracy of the self-calibration mark signal, such as, by quantifying the asymmetry or contrast of the calibration mark signal, will be referred to as "characteristic flaw". The measurement condition determination method described in Japanese Patent Laid-Open Publication No. 4 - 3 2 2 1 9 uses the average of the characteristic 値 in the surface of the substrate and their change as an index to determine the measurement condition. However, since the measurement error is due to Substrate shift - - 200844671 bit / magnification / rotation is generated in the actual device manufacturing position, which is difficult to correlate the conventional index with the WIS that actually raises the problem. This makes it impossible to determine the amount of WIS with a slight impact. [Explanation] The object of the present invention is to improve measurement accuracy under measurement conditions determined by no overlap inspection. According to a first aspect of the present invention, there is provided an exposure apparatus for making a plurality of substrates disposed on a substrate Exposing in each zone of the zone, the apparatus comprising: a measuring device configured to obtain an image signal of a calibration mark formed in the zone, and based on the signal Detecting a position of the calibration mark; and a processor configured to i) cause the measuring device to measure a position of the calibration mark formed in each of at least two regions of the plurality of regions under a complex measurement condition, ii Calculating a characteristic of the signal obtained for each of the at least two zones under each condition of the complex quantity measurement condition, iii) calculating a conversion equation with respect to each condition of the complex quantity measurement condition a coefficient that converts the coordinates of the design position of the calibration mark to approximately the feature corresponding to the design position, the conversion equation being formulated from the coordinate conversion equation, by replacing the quantity with the feature a position at which the coordinate of the design position is converted to a coordinate approximately corresponding to the measurement position of the design position, and iv) calculated based on each condition relative to the complex measurement condition a coefficient, a measurement condition is set, and the measuring device measures the position of the calibration mark -6 - 200844671 under the measurement condition. According to the second aspect of the present invention, An exposure apparatus for exposing each of a plurality of regions disposed on a substrate, the apparatus comprising: a measuring device configured to obtain an image signal of a calibration mark formed in the region, and based on the signal Detecting a position of the calibration mark; and a processor configured to i) cause the measuring device to measure a position of the calibration mark formed in each of at least two regions of the plurality of regions under a complex measurement condition, ii Calculating a characteristic of the signal obtained for each of the at least two zones under each condition of the complex quantity measurement condition, iii) calculating a conversion equation with respect to each condition of the complex quantity measurement condition a coefficient that converts the coordinates of the design position of the calibration mark to approximately the feature corresponding to the design position, the conversion equation being formulated from the coordinate conversion equation, by replacing the quantity with the feature Measuring position, the coordinates conversion equation converts coordinates of the design position into coordinates corresponding to the measurement position corresponding to the design position, and a console, which is matched To display the information relative to the calculated coefficients of the measuring conditions for each condition. According to a third aspect of the present invention, there is provided an exposure apparatus for exposing each of a plurality of regions disposed on a substrate, the apparatus comprising: a measuring device configured to obtain a calibration mark formed in the region An image signal, and measuring a position of the calibration mark based on the signal; and a processor configured to i) cause the measuring device to measure at least two regions of the plurality of 200844671 number regions under the complex measurement condition The position of the calibration mark for each zone 'ii) calculates, under each condition of the complex measurement condition, the characteristic of the signal obtained for each of the at least two zones, iii) relative to the complex number Calculating a coefficient of the conversion equation for each condition of the measurement condition, the conversion equation converting the coordinate of the design position of the calibration mark to the feature corresponding to the design position, the conversion equation is a coordinate conversion equation Formulating, by replacing the measurement position with the feature ,, the coordinate conversion equation converts the coordinates of the design position into an amount approximately corresponding to the design position a coordinate of the position, and iv) calculating a change in the coefficients on the plurality of substrates based on each condition relative to the complex quantity measurement condition, setting a measurement condition, and the measurement device is under the measurement condition The position of the calibration mark is measured. According to a fourth aspect of the present invention, there is provided an exposure apparatus for exposing each of a plurality of regions disposed on a substrate, the apparatus comprising: a measuring device configured to obtain a calibration mark formed in the region An image signal, and measuring a position of the calibration mark based on the signal; and a processor configured to i) cause the measuring device to measure each of at least two regions formed in the complex region under a complex measurement condition a position of the calibration mark of the zone, Π) calculating, under each condition of the complex measurement condition, a characteristic of the signal obtained with respect to each of the at least two zones, iii) relative to the complex quantity The coefficient of the conversion equation is calculated for each condition of the condition. The conversion equation converts the coordinates of the design position of the calibration mark into a feature corresponding to the design position, and the conversion -8 - 200844671 equation is a coordinate conversion Formulating the equation by replacing the measurement position with the feature ,, the coordinate conversion equation converting the coordinates of the design position to approximately correspond to the design position Zhi The coordinate measuring position, and a console configured to display each condition with respect to the measuring conditions such variation coefficient is calculated on the complex of the substrate. In accordance with the present invention, it is possible, for example, to improve the measurement accuracy without the measurement conditions determined by the overlap check. Further features of the present invention will become apparent from the following description of exemplary embodiments. [Embodiment] An embodiment of the present invention will now be described with reference to the drawings. [First Embodiment] Fig. 1 is a schematic view showing an exposure apparatus. The exposure apparatus 1 includes, for example, a reduced projection optical system 3 that reduces and projects an image of the reticle 2, a substrate chuck 5 that holds the substrate 4, a substrate stage 6 that aligns the substrate 4 to a predetermined position, and a calibration detecting optical system 7 . A certain circuit pattern is drawn on the reticle 2. The basic pattern and the alignment mark are formed on the substrate 4 in advance. The calibration detecting optical system 7 functions as a measuring device for measuring the position of the calibration mark 15 on the substrate 4. Fig. 11 is a flow chart for explaining the sequence of the measurement condition determining method according to the first embodiment. In step S101, the substrate 4 is loaded onto the exposure apparatus 1. In step -9-200844671, in step S102, the setting unit 10 in the CPU 9 sets the calibration measurement condition. The measurement condition can be, for example, a measurement of the lighting condition, the type of calibration mark, the number of sample shots, or the design of the sample shot. The sample photographing system calibration mark 1 is measured to determine the photographing area of the photographing configuration, which is one of the plurality of photographing areas formed on the substrate 4 by the calibration mark 15. In step S103, the calibration detecting optical system 7 detects the position of the calibration mark 15 in the same shooting as that of a group of samples on the substrate 4. 2 is a schematic view showing main components of the calibration detecting optical system 7. The illumination light from the source 71 is reflected by the beam splitter 72, passes through the lens 73, and illuminates the alignment mark 15 on the substrate 4. Light diffracted by the calibration mark 15 is returned through the beam splitter 72 and the lens 74, and is split by the beam splitter 75. The CCD sensors 76 and 77 receive the partial beams. The calibration mark 15 is enlarged by the lenses 73 and 74 until the resolution satisfies the measurement accuracy, and is imaged on the C C D sensors 7 6 and 7 7 . The C C D sensors 7 6 and 7 7 measure the displacement of the calibration marks 15 in the X and γ directions, respectively, and have annular intervals of 90 degrees with respect to their optical axes. Since the measurement principle is the same in the X and Y directions, only the position measurement in the X direction is explained. Figure 3 shows an example of a calibration mark 15 for position measurement. In this example, the plurality of strip-shaped alignment marks 16 having a predetermined size in the measurement direction (X direction) and the non-measurement direction (Y direction) are set in the X direction having a predetermined interval between the continuous strips. The alignment mark 15 has a cross-sectional structure recessed by etching and is coated with an anti-caries agent 17. Figure 4 shows an example of a calibration mark signal 18 when the CCD sensor 76 has received illumination light reflected by the plurality of strip calibration marks 16. The corresponding signal 18 shown in Figure -10- 200844671 4 detects the calibration mark position. The average of the calibration mark positions is finally calculated and detected as the last calibration mark position. In step S104, the first calculating unit 12 of the CPU 9 calculates the feature 値W from the signal. For example, the characteristic 値W can be calculated by the following equation: W = AxSaxCbxPc (1) where s is the asymmetry of the calibration mark signal, C-system comparison (S/N ratio), P-shape, and A, a, b , c is a constant obtained from the relationship between the feature 値 W and WIS. Regarding the "right processing region Rw" and the "left processing region Lw" of the signal shown in Fig. 5, the signal asymmetry S is defined as: S = ((cr in Rw) - (σ in Lw)) / ( (cr in Rw) + (σ in Lw)) (2) where σ is the standard deviation. The "right processing area Rw" and the "left processing area Lw" will hereinafter be referred to as "right window" and "left window", respectively. Regarding the right window Rw and the left window Lw shown in FIG. 6, when (comparison in W) = ((maximum W in -W) - (minimum 値 in w) / ((maximum W in W) + (minimum in W)値)), the signal contrast C is defined as: C = ((comparison in Rw) + (comparison in Lw).) / 2 (3) -11 - 200844671 About the right window Rw of the signal shown in Figure 7. And the left window Lw, the signal shape P is defined as: P = {((the rightmost L in Lw) + (the leftmost R in Rw)) - ((the leftmost L in Lw) + (the most in Rw) Right 値))}/{((the rightmost L in Lw)+ (the leftmost φ 値 in Rw))+ ((the leftmost L in Lw)+ (the rightmost R in Rw))} (4) Use The experiment of the substrate actually subjected to WIS has confirmed that the feature 具有W has a correlation with WIS, as shown in FIG. In other words, the calculation feature 容许W allows the operator to know the amount of WIS caused by the signal (hereinafter referred to as "the degree of influence on the WIS"". The first embodiment uses the characteristic 値W as the index determined by the measurement condition. The calculation unit 12 detects the position of the calibration mark in the plural sample shooting selected from all the shooting areas on the substrate, and then calculates the feature 値W. The processing operations in steps S 1 03 and S 1 04 are repeated at the same time. After the calibration mark position and the calculation feature 値 W. The process proceeds to step S 1 0 6 . In step S 1 06, the calibration mark positions in the respective sample shooting are statistically processed to implement an overall calibration, which is from the target configuration. A second index representing the amount of displacement of the shooting configuration is calculated. The second index is not based on the feature 値 W. The second calculating unit 13 of the CPU 9 calculates the second index. For example, Japanese Patent Application Publication No. 63-2 32321 Explain the overall calibration. The overall calibration calculation method will be briefly explained below. The following parameters can be used to explain the configuration displacement. These parameters indicate: X direction Shift Sx, shift Sy in the Y direction, rotation angle 0X around the X axis, rotation angle 0y around the γ axis, magnification Bx in the X direction, and magnification By in the γ direction. Assuming i is the detection number of shots, The test 値Ai for each sample shot is determined by the following equation: The coordinate Di of the design position of the calibration mark in each sample shot is determined by the following equation:

Di

Xi Yi (6)

Use six parameters (Sx, indicating the amount of displacement of the aforementioned shooting configuration)

Sy, 0 X, 0 y, β χ, By), implement linear coordinate transformation D ' i determined by the following equation: D 1 i == 'Bx - θγ- η-ί ι. 'Sx" θχ By υ丄Ten•sy Because θχ and 0y are very small, c〇s0=l and sin0=0 roughly-13- 200844671 keep. Furthermore, since Βχ = 1 and By- 1, 0 χ Βχ Βχ 2 0 χ, 0 y x By = 0 y, and the like, the rotation angle is substantially maintained. As shown in FIG. 9, it is assumed that the alignment mark is formed at the position W of the substrate, and the position W is shifted from the design position AAi. When the coordinate conversion D'i is implemented, the registration error of the calibration mark on the substrate (hereinafter referred to as "correction residual") becomes Ri. Fig. 9 is a schematic diagram showing the coordinate conversion D'i and the correction residual Ri. The corrected residual Ri is determined by the following equation:

Ri = (Di + Ai) - Dfi ... (8) The overall calibration uses the least squares method to minimize the correction residual Ri for each sample shot. That is, when the mean square V of the residual Ri is corrected, it is determined by the following program:

Βχ - 1 - θγ 'Xi~ θχ By - 1 Yi 'Sx' (9) Shift, rotate and enlarge the displacement (Sx, Sy, 0χ, 0y, Βχ,

By) 'that is, the minimum displacement of the mean square V is determined by the following equation: '6V / 5Sx' δν / δεγ δν / 5Rx δν / 8Ry δν / δΒχ _δν / δΒγ -14- ... (10 200844671 Shift, Rotation, and Magnification Displacement (Sx, Sy, 0X, 0y, Βχ, By) are detected by substituting the number into each of the equations (9) and (10) (xi, yi And the design position (Xi, Yi) to calculate. In the above manner, the shooting configuration displacement is calculated by the overall calibration. In step S107, the second calculating unit 13 of the CPU 9 statistically processes the feature 値W in all the sample shots to calculate the first index indicating the "displacement amount from the shooting configuration of the target configuration". Suppose WXi and My; for the characteristics of each _ sample, the shooting displacement can be calculated by substituting the following program: WX, ..-(11)

Wi = yYi is used for equation (5) of the overall calibration in step S106 and Equations (6) and (10) are calculated in the same manner. The calculated shooting configuration displacement amount is described below as (W S X, W S y ' W θ X, W 0 y, W B X, W B y). Calculating the shooting displacement is such that it is possible to transfer the amount of WIS that can be generated by the marking signal to the same error component, which poses a problem at the actual device manufacturing location. This makes it possible to detect the degree of influence on the WIS more accurately. The processing operations of steps S 1 02 to S 1 07 are repeated while changing the measurement conditions to continue to calculate the first index under each measurement condition. Measurement conditions can be used here, for example, to calibrate the illumination conditions of the inspection optics, the type of calibration mark, the number of sample shots, or the design of the sample shot. The setting unit 1 in the CPU 9 sets the measurement condition. The setting unit 1 第一, the first calculation sheet -15- 200844671 element 12, the second calculation unit 13 and the decision unit 14 constitute a processor for processing the calibration mark position measurement condition. The control unit 11 of the CPU 9 controls, for example, the calibration detecting optical system 7 and the substrate stage 6 to measure the calibration mark under a plurality of set measurement conditions. The processing operations of steps S102 to S 107 are performed on a plurality of substrates to successively calculate a first index of each substrate. In step S1 1 0, a change in the first index between the substrates is calculated. Φ represents the prediction of the displacement component of the first index of movement, rotation, and amplification displacement between the substrates, which affects the change in WIS and the degree of influence on WIS under each measurement condition. In other words, it is possible to use the first index as the final index for the measurement condition decision. In step S1 1 1, the change in the first index between the substrates is the smallest measurement condition determined as the measurement condition in which the WIS has the least influence, and the series measurement condition decision step is ended. The decision unit 14 of the CPU 9 determines the optimum measurement condition. Φ Using the measurement condition determination process according to the first embodiment makes it possible to easily determine the optimum retest condition. The process error in which the problem is raised at the actual device manufacturing position is minimized under this condition without overlapping inspection. The shape of the alignment mark according to the third embodiment is not particularly limited to the shape shown in Fig. 3. The method of calculating the mark characteristic 値W does not particularly limit the method of obtaining the calculation result given by the equation (1), and any 値 can be utilized as long as it has an association with the WIS. The selected measurement conditions are not particularly limited to the above examples. The displacement component alone can be used to give a change in the first index determined by the measurement condition, and the displacement component poses a problem at the actual device manufacturing position, for example, only the displacement component is rotated. It is also possible to use a 値 obtained by combining at least two of the group comprising the movement, the displacement component, the rotational displacement component, and the amplified displacement component, and given by the following equation: grange) linear - ^WeX(range ))2+ (^^range))'+ (WBX(range))2^WBy(range))2 •••(12)

And (WSx(range) 4- WSy(range)) 2 grange) linear (13) [Second Embodiment] According to the second embodiment of the present invention, the measurement condition of 値 based on the first index of one substrate is determined process. The configuration and operation of the exposure apparatus are the same as in the first embodiment. Except for the measurement condition determination process, the measurement condition determination process according to the second embodiment will be explained with reference to the flowchart shown in FIG. The processing contents from the substrate to the first index calculation in steps S201 to S208 are the same as steps S 1 0 1 to S 1 0 8 . In the second embodiment, step S209 calculates a first index of a substrate. In step S210, the measurement condition of the first index system is determined to be the measurement condition in which wi S has the smallest influence, and the series of measurement condition decision steps is ended. The measurement process is determined using the measurement condition according to the second embodiment so that it is possible to determine the number of substrates to be measured for the measurement condition to be reduced to one, and thus the measurement condition is shortened to determine the time. -17 - 200844671 Only the error component can be used to give the first index determined by the measurement conditions. The error component poses a problem at the actual device manufacturing position, for example, only the displacement component. It is also possible to use a 获得 obtained by combining at least two of the group including the moving displacement component, the rotational displacement component, and the magnification displacement component, and given by the following equation:

Wlinear = λ/^Θχ)2 + (W0y)2 -f (WBx)2 + (WBy)2

...(15) (WSx + WSy)丄. - + Wiinear [Third Embodiment] The third embodiment calculates a first index for a complex sample shooting design to determine measurement conditions based on their average. Except for the measurement condition determining process, the configuration and operation of the exposure apparatus are the same as in the first embodiment. # The measurement condition determining process according to the third embodiment will be explained with reference to the flowchart of Fig. 13. The processing contents carried from the substrate to the feature 値W in steps S301 to S3 04 are the same as those calculated in steps S101 to S104. In the third embodiment, the processing operations in steps S301 to S304 are repeated for all possible sample capturing positions of the complex sample shooting design. In step S3 06, the present shooting design 1 is selected from a plurality of sample shooting designs, as shown in FIG. The amount of displacement of the shooting configuration from the target configuration is calculated by the overall calibration in step S307 and is based on the feature 値W calculated in -18-200844671 in step S3 08. The processing contents in steps S3 07 and S3 08 are the same as steps S106 and S107. The processing operations in steps S3 07 and S3 08 are repeated until the calculation of the n sample shooting design is completed. In step S310, the average of the amount of displacement of the shooting configuration from the target configuration is calculated based on the characteristics of the n sample shooting designs. The processing operations in steps S301 to S3 10 are repeated while changing the measurement conditions and the substrate. In step S3 13 3, the change in the average of the displacement amounts of the target configurations arranged between the substrates is calculated. The operation for determining the measurement condition from the index calculated in the step S3 14 is the same as the step S 1 U. According to the third embodiment, it is possible to improve the copying ability of the shooting configuration displacement amount and the measurement condition to determine the accuracy. As in the second embodiment, the measurement condition can be determined based on the change in the shooting configuration displacement amount and its own displacement amount. [Fourth Embodiment] The fourth embodiment increases the measurement condition in the process of the WIS causing the correction of the residual component to determine the accuracy. The configuration and operation of the exposure apparatus are the same as in the first embodiment except for the measurement condition determining process. Only the measurement condition decision process according to the fourth embodiment will be explained with reference to the flowchart shown in Fig. 14. The processing contents from the substrate loading until the overall calibration in steps S40 1 to S406 are the same as steps S 1 0 1 to S 1 06. In the fourth embodiment, the residual displacement component other than the moving displacement component, the magnification displacement component, and the rotational displacement component of the photographing configuration is calculated in step S407 to obtain 3 (7, where the standard deviation of the σ-system residual displacement component is taken. The configured residual displacement component is obtained by substituting equation (5) into equation (11) and calculating Ri obtained by equations (6) -19- 200844671 to (10). In step S409, the measurement condition is the residual of the photographing configuration. The displacement component 3 σ is taken as the first index, and the series measurement condition determining step is ended. Even if the WIS generates an error of the residual displacement component, it may determine the measurement condition. As in the third embodiment, the average of the complex sample design can be [Fifth Embodiment] The fifth embodiment shortens the measurement condition to determine the time, and compares the mark signal defined by the candidate exclusion equation (3) from the beginning (s/N ratio) C measurement is low. The condition is improved to improve the determination accuracy. The configuration and operation of the exposure apparatus are the same as in the first embodiment except for the measurement condition determination process. The flowchart illustrates the measurement condition determining process according to the fifth embodiment. The processing contents from the substrate loading until the calibration mark position detection in steps S501 to S503 are the same as steps S 1 0 1 to S 1 03. In the embodiment, if it is determined in step S504 that the signal comparison (S/N ratio) is lower than the set threshold, the candidate is excluded from the measurement condition at this time. This is because when the marker signal contrast becomes equal to or lower than a predetermined threshold 値The signal S/N is smaller than the radial direction. This results in a significant reduction in the accuracy of the correction due to noise. Furthermore, since the correction between the characteristic 値W and the WIS shown in Fig. 8 becomes weak, there is a contrast equal to or It is impossible to accurately calculate the probability of the index under the measurement condition below the predetermined threshold. The subsequent processing operations remaining in the steps S 5 05 to S5 12 as candidates for the measurement condition are the same as the steps S 1 04 to S 1 1 1. According to the fifth embodiment, when there is a measurement condition equal to or lower than the set threshold ,, this may shorten the measurement condition determination time and improve the determination accuracy -20- 200844671 degrees. According to the fifth embodiment Processing of step s 5 04 The sixth embodiment can also be applied to the second to fourth embodiments. [Sixth Embodiment] The sixth embodiment of the present invention employs a process of determining the reliability by using the complex index to determine the final measurement condition to increase the measurement condition. The configuration and operation are the same as in the first embodiment except for the measurement condition determination process. The measurement condition determination process according to the sixth embodiment will be explained with reference to the flowchart shown in Fig. 16. Step S 6 0 1 to S In 6 1 0 (the calculation of the change in the displacement amount from the substrate loading to the target configuration between the substrates, the change is based on the feature 値), the processing contents are the same as the steps S 1 0 1 to S 1 1 0. In the sixth embodiment, step s 6 1 1, a change in the magnification displacement component of the photographing configuration between the substrates, the change is not based on the feature 计算 and is calculated in step S606, and is used as an index for the measurement condition determination. In step S612, the standard deviation Ri(3 σ ) defined by equation (8) and calculated as the corrected residual Ri of step S606 is calculated to obtain its average Ri(3 σ )(ave). The calculated average Ri(3 σ ) (av〇 is used as an index for the measurement condition determination. In step S6 13, the last measurement condition determined by the weighted average of the indices calculated in steps S610 to S612 is used, And the series of measurement condition determining steps are ended. According to the sixth embodiment, it is possible to increase the measurement condition to determine the reliability as compared with only one index. The type and combination of the indexes are not limited to the use of steps S610 to S612. The type and combination of the shooting configuration displacement amount as in the second embodiment can be used. The shooting configuration position between the substrates which is not based on the feature 使用 and used in the step S 61 1 1 - 200844671 The change of the shift is not particularly limited. The change of the rate component. The final measurement condition determination method in step S6 13 is not particularly limited by the calculation of the weighted average of the index. [Various Embodiment] In the above embodiment, the equation is replaced by the equation (1 1) 5) The first index of the coefficient of equation (7) of the coordinate conversion, or based on the change of the standard deviation of the first index such as the plurality of substrates, the CPU 9 automatically sets the measurement condition. The first index calculated by each of the complex measurement conditions or the change of the first index between the plurality of substrates may be displayed on the display unit by the CPU 9, and based on the display information, the user of the exposure device 1 may The predetermined measurement condition is set. Therefore, the display unit can be included, for example, in the console of the CPU 9 connected to the exposure apparatus 1. [Device Manufacturing] Next, a device manufacturing method using the above exposure apparatus will be described with reference to Figs. 17 is a flow chart for manufacturing a narration device (for example, a semiconductor wafer such as 1C or LSI, LCD or C CD). Here, a semiconductor wafer manufacturing method will be exemplified. In step S1 (circuit design), a semiconductor device The circuit is designed. In step S2 (mask fabrication), the mask (also known as the prototype or mask) is fabricated based on the designed circuit pattern. In step S3 (wafer fabrication), the wafer (also referred to as the substrate) It is manufactured using a material such as tantalum. In the step S4 (wafer processing) called pretreatment, the above exposure apparatus uses a mask and a substrate to form an actual circuit by lithography. 22-200844671 In the step S5 (assembly), which is referred to as post-processing, the semiconductor wafer is formed using the substrate manufactured in step S4. This step includes an assembly step (cutting and bonding) and a packaging step (wafer encapsulation). In step S6 (Inspection), the semiconductor device is manufactured in step S5, and is subjected to inspection such as operation confirmation test and durability test. After these steps, the semiconductor device is completed and transported in step S7. Fig. 18 is a wafer process illustrating step S4. Detailed flow chart. In step SI 1 (oxidation), the surface of the substrate is oxidized. In step S12 (CVD), an insulating film is formed on the surface of the substrate. In step S13 (electrode formation), the electrode is formed on the substrate by deposition. . Step S14 (ion implantation) ions are implanted into the substrate. Step S1 5 (resist process) The photosensitizer is applied to the substrate. In step S16 (exposure), the circuit pattern of the mask is transferred to the substrate by exposure using the above exposure apparatus. In step S17 (development), the exposed substrate is developed. Step S 18 (etching), except for the developed resist image, is etched. Step S1 9 (anti-mite removal) 'any unnecessary resist left after uranium engraving is removed. The multilayer structure of the circuit pattern is formed on the substrate by repeating these steps. While the invention has been described with reference to exemplary embodiments, it is understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation to cover all such modifications and equivalent structures and functions. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing an exposure apparatus-23- 200844671 Fig. 2 is a schematic view showing the calibration detecting optical system 7 of Fig. 1; Fig. 3 is a schematic view showing an example of a calibration mark; Fig. 4 is a view showing a calibration mark FIG. 5 is a diagram showing the feature 値; FIG. 6 is a diagram showing another feature ;; FIG. 7 is a diagram showing another feature ;; FIG. 8 is a diagram showing the relationship between the feature W and WIS Fig. 9 is a diagram showing the relationship between the coordinate conversion D, i and the correction residual Ri; Fig. 10 is a diagram showing an example of the complex sample shooting design; ® 11 is a measurement according to the first embodiment. A flow chart of the condition determining process; ® 1 2 is a flow chart for explaining the process of determining the condition according to the second embodiment; and 13 is a flowchart for explaining the process of determining the condition according to the third embodiment; FIG. 14 is an illustration Flowchart of the measurement condition determining process according to the fourth embodiment; FIG. 15 is a flowchart illustrating the measurement condition determining process according to the fifth embodiment; FIG. 16 is a view illustrating the sixth embodiment according to the sixth embodiment Flowchart of the measurement condition determining process; ^ Flowchart for intentionally explaining the device manufacturing using the exposure device; and -24 - 200844671 FIG. 18 is a view illustrating the details of the wafer processing in step S4 of the flowchart shown in FIG. flow chart. [Main component symbol description] W : Feature 値 Rw · Right processing region L w : Left processing region S : Signal asymmetry σ : Standard deviation C : Contrast (S/N ratio) Ρ : Shape SX : Shift S y : Shift Bx: Magnification By: Magnification Ai: Detection 値0 y: Rotation angle 1: Detection shot number 0 X: Rotation angle D' i : Coordinate transformation Ri: Correction residual Μ: Design position xi: Detection 値 yi: Detection値-25- 200844671

Xi : Design location

Yi : Design position V : Mean square wXl : Feature 値 w y i : Feature 値 WSx : Shooting configuration displacement WSy : Feature 値

Wx: Features値

Wy : Feature 値 WBx : Feature 値

Wby: Characteristic 値NA: Number of apertures EUV: Ultraviolet CMP: Chemical mechanical polishing WIS: Wafer sensing shift 1: Exposure device 2: Mask 3: Reduced projection optical system 4: Substrate 5: Substrate chuck 6: Substrate Loading platform

7: Calibration detection optical system 9: CPU 1 〇: Setting unit -26- 200844671 Z control unit • Brother-δ 算 算 兀: second calculation unit: decision unit: calibration mark: strip calibration mark: resist Ζ Calibration mark signal = light source: beam splitter = lens: lens: beam splitter: CCD sensor: CCD sensor

Claims (1)

200844671 X. Patent Application Range 1. An exposure apparatus for exposing each zone of a plurality of zones disposed on a substrate, the apparatus comprising: a measuring device configured to obtain a shadow of a calibration mark formed in the zone An image signal, and based on the signal, the position of the calibration mark is measured; and a 'processor, configured to i) cause the measuring device to measure at least two of the φ complex regions under the complex measurement condition a position of the calibration mark for each zone of the zone, Π) calculating a characteristic of the signal obtained for each zone of the at least two zones under each condition of the complex measurement condition, iii) relative to Calculating a coefficient of a conversion equation for each condition of the complex measurement condition, the conversion equation converting the coordinate of the design position of the calibration mark into a feature corresponding to the design position, the conversion equation is a coordinate conversion Formulating the equation, by replacing the measurement position with the feature ,, the coordinate conversion equation replaces the coordinate φ of the design position to approximately correspond to the design position a coordinate of the coordinate of the measurement position, and iv) setting a measurement condition based on the coefficient calculated for each condition of the complex measurement condition, the measurement device measuring the calibration mark under the measurement condition The location. 2. An exposure apparatus for exposing each zone of a plurality of zones disposed on a substrate, the apparatus comprising: a measuring device configured to obtain an image signal of a calibration mark formed in the zone, and based on the a signal to measure a position of the calibration mark; and a processor configured to -28-200844671 i) causing the measuring device to measure each of at least two regions of the complex region under a complex measurement condition The position of the calibration mark, ii) calculating the characteristic of the signal obtained for each of the at least two zones under each condition of the complex measurement condition, iii) relative to the complex quantity measurement condition Each of the conditions is used to calculate a coefficient of the conversion equation, the conversion equation converting the coordinate of the design position of the calibration mark to the feature corresponding to the design position, the conversion equation is formulated from the coordinate conversion equation, The measurement position is replaced by the feature conversion, and the coordinate conversion equation converts the coordinates of the design position into coordinates corresponding to the measurement position corresponding to the design position. And console, its information is configured to display the coefficients calculated for each condition with respect to the quantity of the retest condition. 3. An exposure apparatus for exposing each zone of a plurality of zones disposed on a substrate, the apparatus comprising: a metrology device configured to obtain an image signal of a calibration mark formed in the zone and based on The signal is used to measure the position of the calibration mark; and the processor is configured to: i) cause the measuring device to measure the calibration of each of the at least two regions formed in the complex region under the complex measurement condition a position of the mark, ii) calculating, under each condition of the complex quantity measurement condition, a characteristic of the signal obtained with respect to each of the at least two zones, iii) each of the complex quantity measurement conditions a condition for calculating a coefficient of a conversion equation that converts a coordinate of a design position of the calibration mark to a characteristic corresponding to the design position, the conversion -29- 200844671 equation is formulated from a coordinate conversion equation, By replacing the measurement position with the feature ,, the coordinate conversion equation converts the coordinates of the design position into coordinates corresponding to the measurement position corresponding to the design position. And iv) setting a measurement condition based on a change in the coefficients calculated on the plurality of substrates relative to each condition of the complex measurement condition, the measurement device measuring the calibration mark under the measurement condition The location. 4. An exposure apparatus for exposing each zone of a plurality of zones disposed on a substrate, the apparatus comprising: a measurement device configured to obtain an image signal of a calibration mark formed in the zone, and based on the signal Measure the position of the calibration mark; and the processor configured to: i) cause the measuring device to measure the calibration mark formed in each of the at least two regions of the plurality of regions under the complex measurement condition Position, Π) calculating, under each condition of the complex measurement condition, a characteristic 该 of the signal obtained for each of the at least two regions, and iii) each condition relative to the complex measurement condition Calculating a coefficient of the conversion equation, the conversion equation converting the coordinate of the design position of the calibration mark to the feature corresponding to the design position, the conversion equation is formulated from the coordinate conversion equation, by using the feature値 replacing the measurement position, the coordinate conversion equation converts the coordinates of the design position into coordinates corresponding to the measurement position corresponding to the design position, and the console And configured to display a change in the coefficients calculated on the plurality of substrates relative to each condition of the complex measurement condition. 5) The exposure apparatus of claim 1, wherein the feature -30- 200844671 includes at least one of a composition comprising a group of: asymmetry representing the signal, representing a comparison of the signal Then, and represent the shape of the signal. 6. The exposure apparatus of claim 1, wherein the processor is configured to set a condition of the complex measurement condition, the coefficient being the smallest under the condition. 7. The exposure apparatus of claim 3, wherein the processor is configured to set a condition of the complex measurement condition, the variation of the coefficients being minimal under the condition. 8. A device manufacturing method comprising: exposing a substrate to radiant energy using an exposure apparatus as defined in claim 1; developing the exposed substrate; and processing the developed substrate to fabricate the device. A device manufacturing method comprising: exposing a substrate to radiant energy using an exposure apparatus defined in claim 2; developing the exposed substrate; and processing the developed substrate to fabricate the device. 10. A device manufacturing method comprising: exposing a substrate to radiant energy using an exposure apparatus as defined in claim 3; developing the exposed substrate; and processing the developed substrate to fabricate the device. -31 - 200844671 A device manufacturing method comprising: exposing a substrate to radiant energy using an exposure apparatus defined in claim 4; developing the exposed substrate; and processing the developed substrate to fabricate the device. -32-