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TW200841378A - Substrate cleaning apparatus, substrate cleaning method and storage medium - Google Patents

Substrate cleaning apparatus, substrate cleaning method and storage medium Download PDF

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Publication number
TW200841378A
TW200841378A TW096148782A TW96148782A TW200841378A TW 200841378 A TW200841378 A TW 200841378A TW 096148782 A TW096148782 A TW 096148782A TW 96148782 A TW96148782 A TW 96148782A TW 200841378 A TW200841378 A TW 200841378A
Authority
TW
Taiwan
Prior art keywords
substrate
cleaning
back surface
holding means
wafer
Prior art date
Application number
TW096148782A
Other languages
Chinese (zh)
Other versions
TWI390589B (en
Inventor
Yasushi Takiguchi
Taro Yamamoto
Akihiro Fujimoto
Shuuichi Nishikido
Dai Kumagai
Naoto Yoshitaka
Takahiro Kitano
Yoichi Tokunaga
Original Assignee
Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200841378A publication Critical patent/TW200841378A/en
Application granted granted Critical
Publication of TWI390589B publication Critical patent/TWI390589B/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
    • B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/0209—Cleaning of wafer backside
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Disclosed is a substrate cleaning method that washes the back of the substrate without reversing the substrate so as not to damage the fringe part of the substrate. The substrate cleaning apparatus 1 has two substrate holding means (adsorption pad 2 and spin chuck 3) to support the substrate in the state to turn the back downward from the back and to hold. The two substrate holding means shift the substrate between these substrate holding means while preventing the supported area from lapping over. The washing member (brush 5) washes the backs of the substrate other than the area supported by the substrate holding means and washes the entire back of the substrate by shifting the substrate between two substrate holding means.

Description

200841378 九、發明說明 【發明所屬之技術領域】 本發明是關於洗淨例如半導體晶圓或液晶顯示用之玻 璃基板（LCD基板）之基板背面的技術。 【先前技術】 在半導體裝置之製造工程中，保持例如半導體晶圓（ 以下稱爲晶圓）於潔淨狀態極爲重要。因此，在各個製造 製程或處理製程之前後，因應所需設置有洗淨晶圓表面之 製程。 一般爲晶圓表面之洗淨是將刷具自上方推壓至固定於 真空腔室或機械夾具之晶圓，一面供給脫離子水（Deionized Water :以下，稱爲diw)等，一面相對性使晶圓和刷具滑動 ’依此除去表面顆粒之手法。 如此之晶圓表面之洗淨不僅形成電路之晶圓上面，即 使對晶圓背面也必須實施。例如，在晶圓上面塗佈光阻液 ’以特定圖案使光阻膜曝光之後，予以顯像而形成光罩圖 案之光微影製程中，當在晶圓背面放置顆粒之附著狀態時 ’則顆粒進入至用以載置晶圓之平台和晶圓之間而直接進 行曝光。如此之顆粒成爲使晶圓產生彎曲，於曝光時引起 失焦（聚焦變形之現象）的原因。尤其，近年來，隨著浸液 曝光或雙圖案製作之配線技術之更微細化，也增加半導體 裝置之製造工程之所含之工程數。因此，顆粒附著於晶圓 背面之風險變大，晶圓背面之洗淨成爲近年重要之課題。 -5- 200841378 但是，光微影製程雖然藉由將執行光阻液曝光之曝光 裝置連接於執行光阻液之塗佈或顯像之塗佈、顯像裝置之 系統而執行，但是晶圓在該些裝置內通常是在將上面朝上 方之狀態被搬運。因此，爲了使用自上方推壓刷具執行洗 淨之類型的基板洗淨裝置而洗淨晶圓背面，在晶圓之搬運 裝置和基板洗淨裝置之間設置被稱爲倒轉機之基板反轉裝 置’於將晶圓朝往基板洗淨裝置搬入搬出時，必須設爲將 晶圓背面設爲朝上方之狀態。但是，如此之手法，則有必 須要有設置倒轉機之空間或執行晶圓之反轉動作之空間， 塗佈、顯像裝置成爲大型化之問題。再者，因省略倒轉機 之設置，即使將刷具設置在晶圓之下方，異產生保持晶圓 之夾具等所覆蓋之無效空間，無法洗淨背面全體。 針對如此之問題，於專利文獻1記載有藉由與晶圓直 徑相同程度之中空圓筒，構成可旋轉保持晶圓之旋轉夾具 ’並將供給洗淨液之噴嘴或刷具配置在該中空圓筒內之基 板洗淨裝置。將背面朝下方（將上面朝向上方）而搬運之晶 圓’當藉由機械夾具等，保持於中空圓筒之開口邊緣上時 ’則成爲自下方將刷具推壓至晶圓背面之狀態。在該狀態 中，使中空圓筒繞著中心軸旋轉時，因晶圓背面和刷具相 對性滑動’故可以不使用倒轉機，洗淨晶圓背面全體。 [專利文獻1] 曰本專利第3 3 7 7 4 1 4號公報：第0 〇 3 6段落至第0 0 4 0段 落，第3圖 200841378 【發明內容】 [發明所欲解決之課題] 但是，專利文獻1所記載之基板洗淨裝置中’因使用 機械夾具等在中空圓筒上保持晶圓之周緣部之構成，故有 對晶圓邊緣部造成損傷之情形。尤其，於執行浸液曝光之 時，因避免光阻膜之外緣部於浸液曝光時與純水接觸而剥 離，故以光阻膜覆蓋至晶圓之斜面部或垂直端面，不使光 φ 阻膜之外緣部位於成爲浸液狀態之區域爲多。當藉由機械 夾具等機械性保持形成如此光阻膜之晶圓之邊緣部時，則 有損傷光阻膜產生顆粒，或於浸液曝光時造成光阻膜剥離 之情形。 本發明是鑒於如此事情所創作出者，其目的爲提供不 需要基板反轉，並且可以不對基板周緣部造成損傷之方式 洗淨基板背面之基板洗淨裝置、基板洗淨方法及記憶該方 法之記憶媒體。 [用以解決課題之手段] 本發明所涉及之基板洗淨裝置是屬於洗淨基板背面之 基板洗淨裝置，其特徵爲：具備第1基板保持手段，水平 β 吸附保持朝向下方之基板背面之第1區域；第2基板保持手 段，藉由該第1基板保持手段接收基板，水平吸附保持不 與上述第1區域重疊之基板背面之第2區域；洗淨液供給手 段，對吸附保持於上述第1基板保持手段或第2基板保持手 段之基板背面供給洗淨液；乾燥手段，於從上述第1基板 200841378 保持手段將基板交接至上述第2基板保持手段之前，用以 乾燥上述第2區域；洗淨構件，基板藉由第1基板保持手段 被保持之期間，與含有上述第2區域之基板的背面接觸而 洗淨，該基板藉由上述第2基板保持手段被保持之期間， 與上述第2區域以外之基板的背面接觸而洗淨。 在此，上述第2基板保持手段構成保持基板之中央而 繞垂直旋轉自如，並構成使完成藉由上述洗淨構件之洗淨 的基板旋轉而甩乾殘留於基板背面之洗淨液即可。再者， 上述乾燥手段以構成將氣體噴射至基板背面之情形爲佳。 並且，以構成具有使上述第1基板保持手段對上述第2 基板保持手段相對性橫方向移動之移動手段，藉由該移動 手段使既已洗淨之第2區域位於第2基板保持手段之上方爲 佳，此時，即使上述第1基板保持手段具備吸附保持面爲 長方形之兩個吸附台，該些吸附台是以上述吸附保持面之 長邊方向相對於該第1基板保持手段之移動方向成爲平行 之方式，保持基板邊緣部之對向的兩處區域亦可，再者， 即使上述第1基板保持手段具備吸附保持面爲圓弧狀之兩 個吸附台，該些吸附台是以構成與被吸附保持之基板同心 圚之方式，保持基板邊緣部之對向的兩處區域亦可。 然後，具備構成包圍保持於上述第1基板保持手段或 第2基板保持手段之基板，藉由上述移動手段與第1基板保 持手段同時移動之杯罩’上述杯罩之內壁面是以難以彈回 飛散至該內壁面之洗淨液之材料，例如親水性之多孔質樹 脂或表面被粗面化之陶瓷所構成即可。再者，具備包圍上 -8 - 200841378 述第2基板保持手段之包圍構件，上述乾燥手段具備有沿 著周方向形成於該包圍構件之上端的氣體噴射口爲更佳。 藉由上述包圍構件，和吸附保持於上述第1基板保持手段 或第2基板保持手段之基板背面所包圍之空間爲減壓環境 爲佳，爲了改變從上述洗淨液供給手段朝向上述包圍構件 之上端流經基板背面之洗淨液之流動方向，具有以描畫出 遮斷該些洗淨液供給手段和包圍構件之上端之間的軌跡之 • 方式，吐出流體之流體吐出手段爲更佳。 當作第1基板保持手段和第2基板保持手段之其他態樣 ，即使具備用以使上述第2基板保持手段對上述第1基板保 持手段相對性升降之升降手段，和覆蓋該第2基板保持手 段之上面的覆蓋構件，在使第2基板保持手段退避至藉由 第1基板保持手段所保持之基板之上述第2區域之下方，並 且使上述覆蓋構件位置於該第2基板保持手段之上方之狀 態下，藉由上述洗淨構件洗淨該第2區域亦可。 • 再者，在該些所有發明中，又具備有用以對藉由上述 洗淨構件所洗淨之後的基板背面照射紫外光，使殘留於基 板背面之粒子收縮之紫外線燈爲佳。並且，即使又具備有 :測量上述洗淨構件與基板背面接觸之力的測量手段；使 ^ 該洗淨構件對上述基板相對性升降之升降手段；和根據藉 由上述測量手段之測量結果使上述升降手段動作，控制上 述洗淨構件與基板背面接觸之力成爲使先所定之範圍內之 値的控制手段亦可。 在此，於上述基板背面之周緣區域被疏水化處理，上 200841378 述洗淨構件於洗淨該周緣區域之時，不與該基板背面接觸 ，攪拌藉由上述洗淨液供給手段所供給之洗淨液，利用該 所攪拌之洗淨液之水勢，洗淨上述周緣區域內之基板背面 爲佳。再者，即使，上述基板背面之周緣區域被疏水化處 理，爲了將該周緣區域予以親水化，具備照射紫外光之第 2紫外線燈亦可。 除此之外，上述第1基板保持部手段與用以吸引基板 背面而吸附保持之吸引管連接時，於該吸引管介設有用補 捉流入至吸引管內之洗淨液的截留槽爲佳，再者，即使， 具備有用以對滴下於上述第1基板保持手段之吸附保持面 之洗淨液吹氣體而吹散該些洗淨液之氣體噴嘴亦可。 再者，本發明所涉及之基板洗淨方法，屬於洗淨基板 背面之基板洗淨方法，其特徵爲：包含水平吸附保持朝向 下方之基板背面之第1區域的第1基板保持工程；水平吸附 保持轉接該基板而不與上述第1區域重疊之基板背面之第2 區域的第2基板保持工程；對以上述第1基板保持工程或第 2基板保持工程所保持之基板背面供給洗淨液之工程；於 將基板從上述第1基板保持工程轉接至上述第2基板保持工 程之前，乾燥上述第2區域之工程；和上述第1基板保持工 程之期間中，執行包含上述第2區域之基板背面之洗淨， 上述第2基板保持工程之期間中，執行上述第2區域以外之 基板背面之洗淨的工程。 在此，即使又含有於結束上述基板背面之洗淨後，使 基板旋轉甩乾殘留，基板背面之洗淨液之工程亦可。再者 -10- 200841378 ，乾燥上述第2區域之工程是藉由對基板背面噴射氣體而 執行爲佳，即使，又包含對洗淨後之基板背面照射紫外光 ，使殘留於基板背面之粒子收縮之工程亦可。 再者，本發明所涉及之記憶媒體，屬於儲存有洗淨基 板背面之基板洗淨裝置所使用之程式的記憶媒體，其特徵 爲：上述程式爲了實行上述所記載之基板洗淨方法組成步 驟。 [發明效果] 若藉由本發明所涉及之基板洗淨裝置時，因支撐基板 背面而予以保持，並直接在該狀態下執行洗淨，故除基板 洗淨裝置之外，不需要設置反轉基板之裝置的空間，或用 以執行基板反轉動作之空間。其結果，比起以往類型之基 板洗淨裝置，可以使設置有基板洗淨裝置之塗佈、顯像裝 置小型化。 # 再者，該基板洗淨裝置因在兩個基板保持手段之間轉 接基板，故不會產生基板保持手段所覆蓋之無法洗淨的無 效空間。依此，因迴避無效空間之產生，故必須要機械性 保持基板周緣部，不會對基板周緣部給予損傷，可執行洗 * 淨，可防止顆粒之產生或對光阻膜造成損傷而對提升製品 之良率有貢獻。 【實施方式】 在以下說明之實施形態中，針對設置在塗佈、顯像裝 -11 - 200841378 置之類型的洗淨裝置，當作基板洗淨裝置（以下稱爲洗淨 裝置）之一例予以說明。雖然針對包含藉由該洗淨裝置之 洗淨工程的光微影製程之具體例予以後述，但是本洗淨裝 置設置在例如塗佈、顯像裝置之出口附近，完成自洗淨形 成光阻膜之晶圓背面後，朝向後續之曝光裝置送出之任務 〇 首先，參照第1圖至第3圖，針對本實施形態所涉及之 • 洗淨裝置之構造予以說明。第1圖表示洗淨裝置1之斜視圖 ，第2圖爲該平面圖，第3圖爲縱剖面圖。 如第1圖所示般，洗淨裝置1爲將當作略水平吸附保持 自塗佈、顯像裝置內之搬運手段（後述之第2交接機械臂 D2)所接收之晶圓W之第1基板保持手段的吸附台2，和完 成自該吸附台2接收晶圓 W同樣略水平吸附保持之第2基 板保持手段之任務之旋轉夾具3，和洗淨晶圓W背面之刷 具5，安裝在上面開口之箱狀之下杯罩43之構造。 # 首先，針對屬於第1基板保持手段之吸附台2予以說明 。如第1圖所示般，洗淨裝置1具備兩個吸附台2，各個吸 附台2由例如細長之塊體所構成。兩個吸附台2被配置成可 以略平行支撐保持晶圓W噴背面之周緣部份（第1區域）° * 吸附台2與無圖式之吸引管連接，具備當作經第2圖所示之 吸附孔2a —面吸附晶圓W —面保持之真空夾具的功能。 如第1圖所示般，各個吸附台2安裝於細長棒狀之墊支 撐部2 1之略中央部，該些2根墊支撐部2 1之兩端部藉由各 安裝於兩根橋桁部22，構成由墊支撐部2和橋桁部22所形 -12- 200841378 成之井桁20。 兩根橋桁部22之兩端各被固定於沿著該些側壁被延伸 設置在下杯罩43對向之兩側壁（朝向第1圖之前側和後側的 側壁）之外側的兩根皮帶23上。各個皮帶23捲繞於由兩個1 組所構成之捲軸24，各捲軸24安裝於各被平行配置在上述 兩側壁之兩片側板26。捲軸24之一個連接於構成移動手段 之驅動機構25，經捲軸24或皮帶23使橋桁部22移動，可以 使已述之井桁20全體在如第1圖、第2圖所示之X方向移 動自如。 再者，如第1圖所示般，各個側板26是藉由由滑動器 27a和導軌27b所構成之2組升降機構27支撐該底面，固定 於洗淨裝置1之無圖式之框體床面。在該些升降機構27之 一個設置無圖示之驅動機構，藉由在導軌27b使滑動器 27a升降，可以使上述井桁20全體在圖中之Z方向升降。 再者，井桁20上，跨設有用以抑制洗淨液飛散之甜甜 圈狀之上杯罩41。在上杯罩41之上面設置有較晶圓W大 口徑之開口部4 1 a，可以經該開口部4 1 a在搬運手段和吸 附台2等之間執行晶圓W之交接。並且，被跨設在井桁20 上之上杯罩41是如第3圖所示般，構成隨著井桁20之動作 在X方向和Z方向移動。 接著，針對屬於第2基板保持手段之旋轉夾具3予以說 明。旋轉夾具3爲自下方支撐晶圓W之背面中央部（第2區 域）之圓板。旋轉夾具3被設置在略平行配置之兩個吸附台 2之中間，藉由各個基板保持手段（吸附台2、夾具3)所支 -13- 200841378 撐之晶圓W背面之第1區域和第2區域爲不重疊。如第3圖 所示般，旋轉夾具3經軸部3 b於驅動機構（旋轉夾具馬達 )3 3，旋轉夾具3是構成藉由該旋轉夾具馬達3 3旋轉及升降 自如。再者，與吸附台2相同，旋轉夾具3也與無圖式之吸 引管連接，具有經第2圖所示之吸附孔3 a —面吸附晶圓W 一面予以保持之功能。 在旋轉夾具3之側方，以可支撐晶圓W背面而予以升 降之方式，設置與升降機構32a連接之支撐銷32，藉由與 外部之搬運手段之共同動作，可以將晶圓W自搬運手段 交接至吸附台2，或是將晶圓 W從旋轉夾具3交接至晶圓 W。 並且，如第4圖所示般，在旋轉夾具3或支撐銷32之周 圍，設置有構成包圍該些機器之包圍構件之氣刀31。氣刀 3 1沿著周方向而在圓筒（包圍構件）之上端形成有氣體之噴 射口 31a，自該噴射口 31a朝向晶圓W背面，藉由噴出例 如壓縮氣體等之氣體，朝圓筒之外側吹散洗淨液，於晶圓 W被轉接至旋轉夾具3時，則完成當作在互相乾燥旋轉夾 具3表面和以該旋轉夾具所支撐之基板背面（第2區域）之狀 態下接觸之乾燥手段的任務。如第7圖所示般，氣刀3 1是 由兩層圓筒所構成’可以經該兩層圓筒間之中空部將自無 圖式之供給部所供給之氣體供給至噴射口 3 1 a。 · 接著，針對當作執行晶圓W之背面洗淨之洗淨構件 之刷具5予以說明。刷具5成爲例如將多數塑膠纖維捆成圓 柱狀之構造’在將該上面推壓至晶圓W背面之狀態下， -14- 200841378 藉由旋轉自如之刷具5和晶圓W互相滑動，則可以除去晶 圚背面之顆粒。刷具5使用例如pVc海綿、氨基甲酸乙酯 海綿、尼龍纖維等。刷具5被安裝於支撐此之支撐部5 1之 前端，支撐部51是以不千涉晶圓w或橋桁部22之方式’ 成爲彎曲成柄构型之形狀。該支撐部51之基端，被固疋於 在第1圖中從設置有旋轉夾具3之方向觀看刷具5沿著深側 之側壁而設置之皮帶52上。皮帶52捲繞於兩個捲繞軸53 ’ 該些捲繞軸5 3安裝於上述深側之側壁上面。捲繞軸5 3之一 方連接於驅動機構5 4，經皮帶5 2或支撐部5 1可以將刷具5 在第1圖、第2圖所示之Y方向移動自如。 再者，在支撐部51之前端設置有無圖式之驅動機構， 可以使刷具旋轉於周方向。並且，再者，支撐部51之前端 如第2圖所示設置有洗淨噴嘴5a和鼓風噴嘴5b，自洗淨液 噴嘴5 a供給用以刷具5洗掉從晶圓W背面除去之顆粒之洗 淨液（例如DIW)，自鼓風噴嘴5b供給促進用以於結束洗淨 之後附著於晶圓W背面之洗淨液之乾燥之例如氮（N2)等之 氣體。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for cleaning a back surface of a substrate such as a semiconductor wafer or a liquid crystal display (LCD substrate). [Prior Art] In the manufacturing process of a semiconductor device, it is extremely important to maintain, for example, a semiconductor wafer (hereinafter referred to as a wafer) in a clean state. Therefore, after each manufacturing process or process, a process for cleaning the surface of the wafer is provided as needed. Generally, the surface of the wafer is cleaned by pushing the brush from above to a wafer fixed to a vacuum chamber or a mechanical jig, and supplying deionized water (hereinafter referred to as diw), etc., while making relativeivity The wafer and the brush slide 'by removing the surface particles. Such wafer surface cleaning does not only form the wafer top surface, but must also be applied to the wafer back side. For example, in a photolithography process in which a photoresist is coated on a wafer to expose a photoresist film in a specific pattern and then developed to form a mask pattern, when the adhesion state of the particles is placed on the back surface of the wafer, The particles enter the space between the platform on which the wafer is placed and the wafer for direct exposure. Such particles cause bending of the wafer and cause defocus (a phenomenon of focus deformation) upon exposure. In particular, in recent years, with the miniaturization of wiring technology for immersion exposure or double pattern production, the number of engineering included in the manufacturing process of a semiconductor device has also increased. Therefore, the risk of particles adhering to the back surface of the wafer becomes large, and the cleaning of the wafer back surface has become an important issue in recent years. -5- 200841378 However, the photolithography process is performed by connecting an exposure device that performs photoresist exposure to a system that performs coating or development of a photoresist solution or a developing device, but the wafer is These devices are usually carried in a state in which the upper side faces upward. Therefore, in order to clean the back surface of the wafer by performing a cleaning type substrate cleaning device from the upper pressing brush, a substrate inversion called an inverted machine is disposed between the wafer transfer device and the substrate cleaning device. When the apparatus is carried in and out of the substrate cleaning apparatus, it is necessary to set the back surface of the wafer to be upward. However, in such a method, there is a need to provide a space for the inverter or a space for performing the reversal operation of the wafer, and the coating and developing device become a problem of enlargement. Further, since the arrangement of the inverter is omitted, even if the brush is placed under the wafer, an invalid space covered by a jig or the like for holding the wafer is generated, and the entire back surface cannot be cleaned. In order to solve such a problem, Patent Document 1 discloses that a rotating cylinder that rotatably holds a wafer is formed by a hollow cylinder having a diameter similar to that of a wafer, and a nozzle or a brush for supplying a cleaning liquid is disposed in the hollow circle. A substrate cleaning device in the cylinder. When the crystal disk carried by the back side (the upper side faces upward) is held by the opening edge of the hollow cylinder by a mechanical jig or the like, the brush is pressed from the lower side to the back side of the wafer. In this state, when the hollow cylinder is rotated about the central axis, the back surface of the wafer and the brush are relatively slid, so that the entire back surface of the wafer can be cleaned without using an inverter. [Patent Document 1] Japanese Patent No. 3 3 7 7 4 1 4: paragraph 0 to paragraph 3 0 to paragraph 0 0 0 0, and figure 3 to 200841378 [invention] [the problem to be solved by the invention] In the substrate cleaning apparatus described in Patent Document 1, since the peripheral portion of the wafer is held on the hollow cylinder by using a mechanical jig or the like, the edge portion of the wafer is damaged. In particular, when the liquid immersion exposure is performed, since the outer edge portion of the photoresist film is prevented from being peeled off by contact with the pure water during the immersion exposure, the photoresist is applied to the slope portion or the vertical end surface of the wafer to prevent light from being lighted. The outer edge portion of the φ film is located in a region where the liquid immersion state is large. When the edge portion of the wafer on which the photoresist film is formed is mechanically held by a mechanical jig or the like, the photoresist film is damaged or the photoresist film is peeled off when the liquid is exposed. The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a substrate cleaning apparatus, a substrate cleaning method, and a method of cleaning the substrate back surface without requiring substrate inversion and damage to the peripheral portion of the substrate. Memory media. [Means for Solving the Problem] The substrate cleaning device according to the present invention is a substrate cleaning device for cleaning the back surface of the substrate, and is characterized in that the first substrate holding means is provided, and the horizontal β is adsorbed and held toward the back surface of the substrate. The first substrate holding means receives the substrate by the first substrate holding means, horizontally adsorbs and holds the second region of the back surface of the substrate which is not overlapped with the first region, and the cleaning liquid supply means holds the adsorption on the substrate The cleaning liquid is supplied to the back surface of the substrate of the first substrate holding means or the second substrate holding means, and the drying means is for drying the second region before the substrate is transferred from the first substrate 200841378 by the holding means to the second substrate holding means. a cleaning member, wherein the substrate is held in contact with the back surface of the substrate including the second region while being held by the first substrate holding means, and the substrate is held by the second substrate holding means, The back surface of the substrate other than the second region is contacted and washed. Here, the second substrate holding means may be configured to hold the center of the holding substrate so as to be rotatable in the vertical direction, and may be configured to rotate the substrate which has been cleaned by the cleaning member to dry the cleaning liquid remaining on the back surface of the substrate. Further, it is preferable that the drying means is configured to eject a gas onto the back surface of the substrate. Further, the moving means for moving the first substrate holding means to the second substrate holding means in the lateral direction is configured such that the second region which has been cleaned is positioned above the second substrate holding means by the moving means In this case, the first substrate holding means includes two adsorption stages having a rectangular shape in which the adsorption holding surface is rectangular, and the adsorption stages are moved in the longitudinal direction of the adsorption holding surface with respect to the first substrate holding means. In a parallel manner, the two regions in which the edge portions of the substrate are opposed may be held. Further, even if the first substrate holding means includes two adsorption stages in which the adsorption holding surface has an arc shape, the adsorption stages are configured. The two regions that are opposite to the edge portion of the substrate may be held in a manner concentric with the substrate to be held by the adsorption. Then, the cup cover that surrounds and holds the substrate held by the first substrate holding means or the second substrate holding means, and the first substrate holding means is moved by the moving means, and the inner wall surface of the cup cover is difficult to bounce back. The material of the cleaning liquid scattered to the inner wall surface may be, for example, a hydrophilic porous resin or a ceramic whose surface is roughened. Further, it is preferable to include a surrounding member that surrounds the second substrate holding means of the above-mentioned -8 - 200841378, and the drying means is preferably provided with a gas injection port formed at an upper end of the surrounding member in the circumferential direction. The surrounding member and the space surrounded by the back surface of the substrate held by the first substrate holding means or the second substrate holding means are preferably a reduced pressure environment, and are changed from the cleaning liquid supply means toward the surrounding member. The flow direction of the cleaning liquid flowing through the back surface of the substrate at the upper end has a mode in which the trajectory between the cleaning liquid supply means and the upper end of the surrounding member is cut off, and the fluid discharge means for discharging the fluid is more preferable. As another aspect of the first substrate holding means and the second substrate holding means, even if the second substrate holding means is provided with a lifting means for relatively raising and lowering the first substrate holding means, and covering the second substrate The covering member on the upper surface of the means retracts the second substrate holding means below the second region of the substrate held by the first substrate holding means, and positions the covering member above the second substrate holding means In this state, the second region may be washed by the cleaning member. Further, in all of the inventions, it is preferable to provide an ultraviolet lamp which irradiates the back surface of the substrate after the cleaning by the cleaning member with ultraviolet light to shrink the particles remaining on the back surface of the substrate. Further, the measuring means includes: a measuring means for measuring a force of contact between the cleaning member and the back surface of the substrate; a lifting means for raising and lowering the relative position of the cleaning member to the substrate; and the measuring result by the measuring means The lifting means operates to control the force by which the cleaning member contacts the back surface of the substrate, and may be a control means for causing flaws within a predetermined range. Here, the peripheral region of the back surface of the substrate is hydrophobized, and the cleaning member of the above-mentioned 200841378 is not in contact with the back surface of the substrate when the peripheral portion is washed, and the washing is supplied by the cleaning liquid supply means. It is preferable to clean the back surface of the substrate in the peripheral region by using the water potential of the stirred washing liquid. Further, even if the peripheral region of the back surface of the substrate is hydrophobized, in order to hydrophilize the peripheral region, a second ultraviolet lamp that emits ultraviolet light may be provided. In addition, when the first substrate holding portion means is connected to the suction pipe for sucking and holding the back surface of the substrate, it is preferable that the suction pipe is provided with a trapping groove for trapping the cleaning liquid flowing into the suction pipe. Further, it is also possible to provide a gas nozzle that blows off the cleaning liquid by blowing a gas to the cleaning liquid that has been dropped on the adsorption holding surface of the first substrate holding means. Further, the substrate cleaning method according to the present invention pertains to a substrate cleaning method for cleaning a back surface of a substrate, comprising: a first substrate holding process for horizontally adsorbing and holding the first region of the substrate back surface facing downward; horizontal adsorption Maintaining the second substrate holding the substrate in the second region on the back surface of the substrate without overlapping the first region; and supplying the cleaning liquid to the back surface of the substrate held by the first substrate holding process or the second substrate holding process The process of drying the second region before transferring the substrate from the first substrate holding process to the second substrate holding process; and performing the second region during the period of the first substrate holding process The cleaning of the back surface of the substrate is performed during the second substrate holding process, and the cleaning of the back surface of the substrate other than the second region is performed. Here, even if it is included in the cleaning of the back surface of the substrate, the substrate is rotated and dried, and the cleaning liquid on the back surface of the substrate may be used. Further, in addition to -10-200841378, the drying of the second region is preferably performed by spraying a gas on the back surface of the substrate, and further includes irradiating the back surface of the cleaned substrate with ultraviolet light to shrink the particles remaining on the back surface of the substrate. The project can also be. Further, the memory medium according to the present invention pertains to a memory medium storing a program used in the substrate cleaning apparatus for cleaning the back surface of the substrate, wherein the program is configured to perform the substrate cleaning method described above. [Effect of the Invention] When the substrate cleaning device according to the present invention is held by the back surface of the support substrate and is directly cleaned in this state, it is not necessary to provide a reverse substrate in addition to the substrate cleaning device. The space of the device or the space for performing the substrate reversal action. As a result, the coating and developing device provided with the substrate cleaning device can be downsized compared to the conventional substrate cleaning device. # Further, since the substrate cleaning apparatus switches the substrate between the two substrate holding means, an ineffective space which cannot be cleaned by the substrate holding means does not occur. Accordingly, since the generation of the ineffective space is avoided, it is necessary to mechanically maintain the peripheral portion of the substrate, and damage to the peripheral portion of the substrate is not performed, and the cleaning can be performed to prevent the generation of particles or damage to the photoresist film. The yield of the product contributes. [Embodiment] In the embodiment described below, a cleaning device of the type provided in the coating and developing device -11 - 200841378 is used as an example of a substrate cleaning device (hereinafter referred to as a cleaning device). Description. Although a specific example of the photolithography process including the cleaning process by the cleaning device will be described later, the cleaning device is provided, for example, near the exit of the coating and developing device to complete the self-cleaning to form a photoresist film. After the wafer back surface is sent to the subsequent exposure apparatus, first, the structure of the cleaning apparatus according to the present embodiment will be described with reference to Figs. 1 to 3 . Fig. 1 is a perspective view showing the cleaning device 1, Fig. 2 is a plan view, and Fig. 3 is a longitudinal sectional view. As shown in Fig. 1, the cleaning device 1 is the first wafer W received by the transport means (the second transfer robot D2 to be described later) which is held by the coating and developing device in a slightly horizontally adsorbed manner. The adsorption stage 2 of the substrate holding means, the rotating jig 3 for accomplishing the task of the second substrate holding means which is slightly horizontally adsorbed and held by the adsorption stage 2, and the brush 5 for cleaning the back surface of the wafer W are mounted. The configuration of the cup cover 43 under the box shape opened above. # First, the adsorption stage 2 belonging to the first substrate holding means will be described. As shown in Fig. 1, the cleaning device 1 is provided with two adsorption stages 2, and each of the adsorption stages 2 is composed of, for example, an elongated block. The two adsorption stages 2 are arranged so as to be able to support the peripheral portion (first region) of the back surface of the wafer W sprayed in a slightly parallel manner. * The adsorption stage 2 is connected to the suction tube of the non-drawing type, and is provided as shown in FIG. The adsorption hole 2a is a surface-adsorbing function of the vacuum chuck of the wafer W. As shown in Fig. 1, each of the adsorption stages 2 is attached to a substantially central portion of the elongated rod-shaped pad supporting portion 21, and both end portions of the two pad supporting portions 2 1 are attached to the two bridge portions. 22, which constitutes a well 20 formed by the pad support portion 2 and the bridge portion 22, -12-200841378. Both ends of the two bridge dams 22 are fixed to the two belts 23 extending along the side walls on the outer sides of the opposite side walls of the lower cup cover 43 (the side walls toward the front side and the rear side of the first figure). . Each of the belts 23 is wound around a reel 24 composed of two sets, and each reel 24 is attached to two side plates 26 which are arranged in parallel on the two side walls. One of the reels 24 is connected to the drive mechanism 25 constituting the moving means, and the bridge portion 22 is moved by the reel 24 or the belt 23, so that the entire well 20 described above can be moved in the X direction as shown in Figs. 1 and 2 . Further, as shown in Fig. 1, each of the side plates 26 supports the bottom surface by two sets of elevating mechanisms 27 composed of a slider 27a and a guide rail 27b, and is fixed to the frameless bed of the cleaning device 1. surface. A driving mechanism (not shown) is provided in one of the elevating mechanisms 27, and the slider 27a is moved up and down by the guide rail 27b, so that the entire well 20 can be moved up and down in the Z direction in the drawing. Further, on the well 20, a doughnut-shaped upper cup cover 41 for suppressing the scattering of the washing liquid is provided. An opening portion 4 1 a having a larger diameter than the wafer W is provided on the upper surface of the upper cup cover 41, and the wafer W can be transferred between the conveying means and the suction stage 2 via the opening portion 41a. Further, as shown in Fig. 3, the cup cover 41 which is placed over the well 20 is configured to move in the X direction and the Z direction in accordance with the operation of the well 20. Next, the rotation jig 3 belonging to the second substrate holding means will be described. The rotary jig 3 is a circular plate that supports the central portion (second region) of the back surface of the wafer W from below. The rotating jig 3 is disposed in the middle of the two adsorption stages 2 arranged in a slightly parallel manner, and the first area and the first side of the wafer W are supported by the respective substrate holding means (adsorption stage 2, jig 3) -13-200841378 2 areas are not overlapping. As shown in Fig. 3, the rotary jig 3 is passed through a shaft portion 3b to a drive mechanism (rotary jig motor) 33, and the rotary jig 3 is configured to be rotatable and lifted by the rotary jig motor 33. Further, similarly to the adsorption stage 2, the rotary jig 3 is also connected to the suction tube of the non-drawing type, and has a function of holding the wafer W while being adsorbed by the adsorption holes 3a shown in Fig. 2 . The support pin 32 connected to the elevating mechanism 32a is provided on the side of the rotating jig 3 so as to support the back surface of the wafer W, and the wafer W can be transported by the common operation of the external conveying means. The means is handed over to the adsorption stage 2, or the wafer W is transferred from the rotating jig 3 to the wafer W. Further, as shown in Fig. 4, an air knife 31 constituting an enclosing member surrounding the machines is provided around the rotating jig 3 or the support pin 32. The gas knife 3 1 is formed with a gas ejection port 31a at the upper end of the cylinder (the surrounding member) in the circumferential direction, and the gas is ejected from the ejection opening 31a toward the back surface of the wafer W by ejecting, for example, a gas such as a compressed gas. When the wafer W is transferred to the rotating jig 3, the outer side is blown to the surface of the rotating jig 3 and the back surface (second area) of the substrate supported by the rotating jig. The task of contacting the means of drying. As shown in Fig. 7, the air knife 31 is composed of two layers of cylinders. The gas supplied from the supply unit of the non-drawing type can be supplied to the injection port 3 through the hollow portion between the two layers of cylinders. a. Next, the brush 5 as a cleaning member for performing the back surface cleaning of the wafer W will be described. The brush 5 is, for example, a structure in which a plurality of plastic fibers are bundled in a cylindrical shape. In a state in which the upper surface is pressed against the back surface of the wafer W, the slider 5 and the wafer W are slidably slid by each other. The particles on the back side of the wafer can then be removed. The brush 5 uses, for example, a pVc sponge, a urethane sponge, a nylon fiber or the like. The brush 5 is attached to the front end of the support portion 51 that supports the support portion 51. The support portion 51 has a shape that is curved into a handle configuration without depending on the wafer w or the bridge portion 22. The base end of the support portion 51 is fixed to the belt 52 provided along the side wall of the deep side of the brush 5 in the direction in which the rotary jig 3 is provided in Fig. 1 . The belt 52 is wound around the two winding shafts 53'. The winding shafts 53 are attached to the side walls of the deep side. One of the winding shafts 5 3 is connected to the drive mechanism 54, and the brush 5 can be moved in the Y direction shown in Figs. 1 and 2 via the belt 5 2 or the support portion 51. Further, a driving mechanism having no pattern is provided at the front end of the support portion 51, so that the brush can be rotated in the circumferential direction. Further, the front end of the support portion 51 is provided with a cleaning nozzle 5a and a blast nozzle 5b as shown in Fig. 2, and is supplied from the cleaning liquid nozzle 5a for washing off the back surface of the wafer W. The granule cleaning liquid (for example, DIW) is supplied with a gas such as nitrogen (N2) which is supplied from the blast nozzle 5b to promote drying of the cleaning liquid adhering to the back surface of the wafer W after completion of the cleaning.

其他，如第3圖所示般，在下杯罩43之底部設置有用 以將儲存於下杯罩43內之洗淨液排出之排液管16，用以排 氣洗淨裝置1內之氣流之兩個排氣管15。排氣管15因防止 儲存於下杯罩43底部之洗淨液流入排氣管1 5，故從下杯罩 43之底面延伸至上方，並且以不自上方滴落之洗淨液直接 進入至排氣管15之方式，藉由成安裝於氣刀31周圍之環狀 蓋之內杯罩42覆蓋。再者，圖中之13爲於完成洗淨晶圓W -15- 200841378 之後自_h方對晶圓外圍附近吹壓縮氣體輔助所殘留之洗淨 液乾燥之鼓風噴嘴’ 14爲用以與位於刷具5之支撐部51前 端之洗淨液噴嘴5 a同時將洗淨液供給至晶圓W背面之洗 淨液噴嘴。並且，鼓風噴嘴1 3具備無圖式之升降機構，於 晶圓搬入搬出時，以不與搬運中之晶圓W或搬運手段干 涉之方式，退避至上方。 再者，在無延伸設置各皮帶23、52之下杯罩43側壁， 安裝有收納UV燈12之燈箱1 1。處理對象之晶圓W由X 左方向被搬入搬出至洗淨裝置1內，此時，構成通過UV 燈12之上方。UV燈12是對完成洗淨而被搬出之晶圓W背 面照射紫外光，完成使殘留之顆粒收縮之任務。 再者，如第2圖所示般，各驅動機構25、54、UV燈12 、設置在排氣管15之無圖式之壓力調整部等，藉由控制塗 佈、顯像裝置全體之動作的控制部6被控制。控制部6是由 具有例如無圖式之程式儲存部之電腦所構成，在程式儲存 部儲存有電腦程式，該電腦程式具備有在吸附電2和旋轉 夾具3之間交接從外部搬運裝置所接收之晶圓W，或針對 藉由刷具5洗淨或動作等之步驟（命令）群。然後，藉由該 電腦程式被讀出至控制部6，控制部6控制洗淨裝置1之動 作。並且，該電腦程式是在被收納於例如硬碟、光碟碟、 記憶卡等之記憶手段之狀態下儲存於程式儲存部。 根據以上所說明之構成，針對洗淨晶圓W背面之動 作，一面參照第5圖至第8圖，予以說明。第5圖及第6圖爲 用以說明晶圓W之背面洗淨所涉及之洗淨裝置1之各動作 -16- 200841378 的縱剖面圖。第7圖爲表示洗淨時之晶圓W背面之樣子的 說明圖。再者，第8圖是在吸附電2或旋轉夾具3所保持之 各種狀態下，模式性表示洗淨晶圓w之區域之平面圖。 並且，在該些圖中，爲了便於圖式，因應所需適當省略 UV燈12或鼓風噴嘴13等之記載。 如第5圖（a)所示般，例如A馬蹄形之搬運手段（第2父 接機械臂D2)是將處理對象之晶圓W般入至洗淨裝置1內 而在上杯罩41之開口部41a上方停止，支撐銷32是從旋轉 夾具3之下方上昇在搬運手段之下方待機。搬運手段是從 支撐銷3 2之上方下降將晶圓W交給支撐銷3 2 ’退出至洗 淨裝置1之外。此時，吸附台2是在保持晶圓W之面較刷 具5上面高之位置待機，旋轉夾具3則退避至較刷具5上面 低之位置。藉由如此位置關係，當支撐銷32下降時，晶圓 W首先交至吸附台（第5圖（b))。 之後，吸附台2以即使自背面推壓刷具也不動之方式 ，吸附保持晶圓W，保持晶圓W直接移動至右方向。然 後，搬運至事先決定晶圓W之位置（例如氣刀3 1左端與晶 圓W左端略一致之位置）之後，吸附台2下降，將晶圓W 之背面推壓至刷具5上面（第5圖（c))。 接著，使氣刀3 1動作防止洗淨液回流附著於旋轉夾具 3表面之後，由支撐部51前端之洗淨液噴嘴5a供給洗淨液 ，並且使刷具5旋轉開始洗淨晶圓W之背面洗淨。背面洗 淨是藉由吸附台2之晶圓W之移動和刷具5之移動的組合 而進行。具體而言，如第8圖（a)所示般，刷具5是在圖中 -17- 200841378 之 Y方向往返，刷具5之移動方向切換之時，吸附台2僅 以較刷具5直徑短之距離移動至左X方向。依此，刷具5 描畫出以箭頭所示之軌跡在晶圓W背面移動，可以洗淨 同圖中以左上斜線所塗畫之區域Τ1的四處。 在此，執行洗淨之期間中，晶圓W之背面全體如第7 圖所示般，被洗淨液之液膜F覆蓋，以刷具5除去之顆粒 是與自該晶圓 W背面流落之洗淨液同時被流沖至下杯罩 43。再者，自氣刀3 1之噴出口 3 1 a朝向晶圓W背面噴出氣 體，洗淨液朝向氣刀3 1之外側吹散，依此與氣刀3 1對向之 晶圓W背面保持乾燥之狀態。藉由如此之構成，可以防 止覆蓋晶圓W背面之洗淨液回流至氣刀3 1之內側。其結 果，旋轉夾具3之表面經常維持乾燥狀態，可防止由於處 理之洗淨液所造成之污染或形成水印。 當完成洗淨上述區域T 1時，使吸附台2移動而令晶圓 W中央部位於旋轉夾具3上方（第6圖（a))，接著，執行將晶 圓W從吸附台2交接至旋轉夾具3。晶圓W之交接是例如 使氣刀3 1動作，直接停止刷具5之移動或旋轉、洗淨液之 供給，解除藉由吸附台2吸附晶圓W，另外，使退避之旋 轉夾具3上昇支撐晶圓W之背面，接著藉由使吸附台2退 避至下方而執行。 接收到晶圓W之旋轉夾具3因以大略與吸附台2相同 高度，吸附保持晶圓W，故刷具5成爲被推壓於晶圓W之 狀態。在此，再次使刷具5旋轉，藉由供給洗淨液，再次 開始背面洗淨（第6圖（b))。此時，背面洗淨藉由旋轉夾具3 -18- 200841378 之旋轉和刷具5之移動的組合而進行。具體而言’例如第8 圖（b)所示般，首先使刷具5移動至可以洗淨晶圓W之最外 周之位置後緩慢使晶圓w旋轉，晶圓W 一旋轉時’使刷 具5移動至較以先前動作所洗淨之環狀區域，可以僅以刷 具5之直徑部份洗淨內周側之位置，重複執行相同動作。 藉由如此之動作，一面描畫出同心圓狀之軌跡，一面移動 晶圓W背面，可以洗淨同圖中以右上斜線所塗畫之區域 T2的四處。 在此，組合區域T1和區域T2之區域是如第8圖（b)所 示般，包含晶圓 W背面全體，以不產生無法洗淨之無效 空間之方式，調整各機器之尺寸或移動範圍。再者，以旋 轉夾具3保持晶圓W而執行洗淨之期間中，不僅刷具5側 之洗淨液噴嘴5a，在第6圖（b)中，也從被設置在氣刀31左 側方之洗淨液噴嘴14供給洗淨液。當晶圓W表面濕潤之 區域和乾燥之區域混合時，因於使洗淨液乾燥之時，產生 水印之原因，故抑制洗淨液遍及四處產生水印。 如此一來，當完成晶圓 W背面全體之洗淨時，則停 止刷具5之旋轉或移動、洗淨液之供給、旋轉夾具3之旋轉 ，移至洗淨液之甩乾動作。甩乾是藉由使旋轉夾具3高速 旋轉甩掉附著於晶圓W背面之洗淨液而執行。如先前所 述般，藉由一口氣甩乾四處濕潤之晶圓W而使予乾燥， 抑制產生水印。此時，使退避至上方之風鼓噴嘴1 3下降， 同時以使刷具5横邊之風鼓噴嘴5b位於晶圓W周緣部之方 式，移動支撐部51，藉由晶圓周緣部之上面和下面吹出氣 -19- 200841378 體，促進甩乾。並且，針對旋轉夾具3所保持之第2區域， 雖然無法執行甩乾，但是在藉由氣刀31而乾燥之狀態下， 因與旋轉夾具3接觸，故幾乎不會產生水印。 藉由以上所說明之動作，完成晶圓W背面全體之洗 淨和乾燥，以與搬入時相反之動作將晶圓W交給搬運手 段而搬出。此時點亮第1圖至第3圖所示之UV燈12，自自 馬蹄形狀之搬運手段之下方朝向晶圓W背面照射紫外線 ，即使萬一附著顆粒之時，因例如有機物藉由紫外線之照 射而被分解，故使如此之類型之顆粒收縮，可以縮小失焦 等之影響。 與晶圓W之搬出動作並行，吸附台2或旋轉夾具3移 動至第5圖（a)所示之位置，等待下一個晶圓W之搬入。然 後，重複參照第5圖至第8圖予以說明之動作，順序洗淨多 數晶圓W。 接著，針對第2實施形態，一面參照第9圖至第11圖予 以說明。第9圖爲表示第2實施形態所涉及之洗淨裝置1〇〇 之構成的平面圖，第1〇圖及第11圖爲表示該作用之縱剖面 圖。在該些圖中，對於與第1實施形態相同之構成，賦予 與第1至第8圖所使用之符號相同之符號。 第2實施形態所涉及之洗淨裝置是使屬於第2基板 保持手段之旋轉夾具3退避至晶圓W之第2區域下方之點 ，與使晶圓W相對於旋轉夾具橫方向移動之第1實施形態 不同。在第2實施形態中，井桁20固定於X方向’可僅向 Z方向升降。使該井桁2 0升降之升降機構27 (參照第1圖）和 -20- 200841378 使旋轉夾具升降之無圖式之升降機構，是構成用以使第2 基板保持手段對上述第1基板保持手段相對性升降之升降 手段。再者，刷具5是該支撐部5 1在基端側被固定於下杯 罩43。該支撐部5 1因構成以基端部之支軸爲中心轉、伸縮 自如，故可以不使晶圓W移動至橫方向，藉由刷具5從該 中心區域（第2區域）洗淨至支撐部51之基端部側。 再者，在刷具5之相反側，經伸縮自如之支撐部72於 φ 下杯罩43安裝有用以防止於第2區域洗淨中洗淨液滴下退 避至該下方之旋轉夾具3上之具有防水性之例如氟樹脂製 之覆蓋構件71。並且，在該支撐部72安裝有完成當作使第 2區域乾燥之乾燥手段之任務的乾燥噴嘴73，可朝向第2區 域噴射氣體。再者，在本實施形態中，於旋轉夾具3周圍 ，因不設置氣刀3 1，故自覆蓋構件7 1之外緣部朝向下方噴 出例如氮氣體等之氣體，使於洗淨時之霧不附著於旋轉夾 具3。 # 接著，當針對第2實施形態所涉及之洗淨裝置100之作 用予以說明時，則如第10圖（a)所示般，在晶圓W搬入時 ，旋轉夾具3退避至下杯罩43之下方，再者覆蓋構件71退 避至較旋轉夾具3上方更側方。在該狀態下，使升降銷3 2 ~ 升降’自搬運手段D2接收晶圓W ’在吸附台2上吸附保持 晶圓W。 接著，如第10圖（b)所示般，使升降銷32退避至旋轉 夾具3之位置，使覆蓋構件7 1前進，位於旋轉夾具3之上方 之後’使刷具5移動至晶圓W之略中央部。然後，使吸附 -21 - 200841378 台2下降，開始洗淨含有第2區域之晶圓W中央部。此時 ，旋轉夾具3雖然退避至洗淨中之第2區域之下方，但是覆 蓋構件71成爲傘，並且藉由該覆蓋構件71朝向下方噴出氣 體，由於霧不附著，故旋轉夾具3保持乾燥狀態。當完成 晶圓W中央部之洗淨時，刷具5則退避至側方，自乾燥噴 嘴73朝向第2區域噴射氣體，依此乾燥該區域。 接著，如第1 1圖所示般，於將覆蓋構件7 1退避至側方 之後，使旋轉夾具3上昇，自吸附台2將晶圓 W交給旋轉 夾具3，吸附保持完成洗淨及乾燥之第2區域。然後，一面 組合晶圓W之旋轉和刷具5之移動，一面洗淨無完成洗淨 之第2區域以外之晶圓W背面。此時，覆蓋構件7 1因退避 至側方，故升降銷32即使構成例如儲存於鞘體等而不與洗 淨液接觸亦可。 當完成洗淨時，使旋轉夾具3旋轉甩乾晶圓W而予以 乾燥之後，以與搬時入相反之動作，自升降銷32交給至外 部之搬運手段，將晶圓W搬出至洗淨裝置1 00外部。並且 ，雖然第9圖無表示，但是此時即使在晶圓 W背面藉由 UV燈執行紫外線照射當然亦可。 若藉由本實施形態所涉及之洗淨裝置1、1 00，則具有 以下之效果。因支撐晶圚W背面而予以保持，直接在如 此之狀態下執行洗淨，故除洗淨裝置1之外，不需要設置 反轉晶圓w之倒轉機之空間或執行晶圓W反轉動作之空 間。其結果，相較於以往之類型，可以使設置該洗淨裝置 1、10 0之塗佈、顯像裝置小型化。 -22- 200841378 再者，本洗淨裝置1、100因在兩個基板保持手段（吸 附台2、旋轉夾具3)之間轉接晶圚w，故可以不產生因被 吸附台2或旋轉夾具3覆蓋而導致無法洗淨之無效空間。依 此，因迴避無效空間之產生，故無須機械性保持晶圓W 之周緣部，不會對晶圓W周緣部造成損傷，可執行洗淨 ，並且可以對防止產生顆粒或對光阻膜造成損傷而對提升 製品之良率有貢獻。 再者，本實施形態所涉及之洗淨裝置1、1 〇〇，採用於 洗淨完成後，藉由甩乾一口氣使附著於晶圓W之洗淨液 乾燥，在旋轉夾具3周圍設置氣刀3 1，於晶圓W被交給旋 轉夾具3時，在互相乾燥旋轉夾具3表面和以該旋轉夾具所 支撐之基板背面（第2區域）之狀態下接觸之機構。藉由該 些機構，抑制產生在晶圚W或旋轉夾具3中之水印，可以 防止洗淨後之晶圓W背面再次污染。 再者，該洗淨裝置1、10 0雖然洗淨構件採用洗淨效果 高之刷具5，但洗淨構件並不限定於此。例如即使採用二 流體噴嘴或噴射噴嘴、機械式噴嘴等，藉由吹出洗淨液等 除去顆粒之類型之洗淨構件亦可。並且，在實施形態中， 雖然例示旋轉式之刷具5，但是即使代替此採用振動式之 刷具亦可，並且，洗淨液之種類也不限定於DIW，即使爲 其他洗淨液亦可。 並且，設置於洗淨裝置之基板保持手段是如實施形態 所示般，並不如實施形態所示般僅限定於2種類（吸附台2 、旋轉夾具3)。例如具備3種類以上之基板保持手段，在 -23- 200841378 該些保持手段之間成轉接2次以上之基板亦可。此時，可 以解釋成最後基板保持爲第2基板保持手段，之前保持基 板爲第1基板保持手段。 接著，針對顯像裝置適用上述洗淨裝置1之一例予以 簡單說明。第12圖爲於塗佈、顯像裝置連接曝光裝置之系 統之平面圖，第13圖爲同系統之斜視圖。再者，第14圖爲 同系統之縱剖面圖。於塗佈、顯像裝置設置有載體區塊 S1，構成交接機械臂C自載置在該載置台101上之密閉型 之載體1〇〇取出晶圓W而交給至處理區塊S2，並且交接機 械臂C自處理區塊S2接收處理完之晶圓W而返回置載體 100 〇 本實施形態所涉及之洗淨裝置1(或是洗淨裝置100， 以下相同）於將晶圓w自處理區塊S2交給曝光裝置S4之 時，即是如第12圖所示般，構成在介面區塊S3之入口部 執行成爲處理對象之晶圓W之背面洗淨。 上述處理區塊S2是如第13圖所示般，在該例中，由 下方依順疊層用以執行顯像處理之第1區塊（DEV層）B 1、 形成在光阻膜之下層側之反射防止膜之形成處理的第2區 塊（BCT層）B2、用以執行光阻膜之塗佈之第3區塊（COT層 )B3、用以執行形成在光阻膜之上層側之反射防止膜之形 成的第4區塊（TCT層）B4而構成。 第2區塊（BCT層）B2和第4區塊（TCT層）B4是由藉由旋 轉塗層塗佈用以形成各個反射防止膜之藥液之本形態所涉 及之塗佈單元，和用以執行在該塗佈單元所執行之處理的 -24- 200841378 前處理及後處理的加熱冷卻系統之處理單元群，和被設置 在上述塗佈單元和處理單元群之間，在該些之間執行晶圓 w之交接的搬運機械臂A2、A4所構成。即使針對第3區塊 (COT層）B 3，除上述藥液爲光阻液之外，其他爲相同構成 〇 另外，針對第1區塊（DEV層）B1，是在一個DEV層 內疊層兩層顯像單元110。然後，在該DEV層B1內， 設置用以將晶圓W搬運至該些兩層顯像單元11〇之搬運機 械臂A1。即是，成爲相對於兩段之顯像單元，搬運機械 臂A1被共通化之構成。 並且，在處理區塊S2是如第12圖及第14圖所示，設 置支架單元U5，來自載體區塊si之晶圓，藉由被設置在 上述支架單元U5附近之升降自如之第1交接機械臂D1， 順序被搬運至上述支架單元U 5之一個交接單元，例如第2 區塊（BCT層）B2之對應的交接單元CPL2。接著，晶圓W 藉由第2區塊（BCT層）B2內之搬運機械臂A2，自該交接單 元CPL2搬運至各單元（反射防止膜單元及加熱、冷卻系統 之處理單元群）’在該些單元形成反射防止膜。 之後’晶圓W經被設置在支架單元U5之交接單元 BF2、上述支架單元U5附近之升降自如之第〗交接機械臂 D1、支架單元U5之交接單元CPL3及搬運機械臂A3，被 搬入至第3區塊（COT層），形成光阻膜。並且，晶圓W是 從搬連機械臂A3被交給至^支架單元之交接單元BF3 。並且，形成有光阻膜之晶圓…也有在第4區塊（TCT層 -25- 200841378 )B4形成反射防止膜之情形。此情形，晶圓W經交接單元 CPL4而被交給至搬運機械臂A4，形成反射防止膜之後藉 由搬運機械臂A4，被交接至交接單元TRS4。 另外，在DEV層B1之上部，設置有用以將晶圓W自 被設置於支架U5之交接單元CPL11直接搬運至設置在支 架單元U6之交接單元CPL 12之專用搬運手段之穿梭機械 臂E。形成光阻膜或反射防止膜之晶圓W經交接機械臂 D1自交接單元BF3、TRS4被交給至交接單元CPL11，自 此藉由穿梭機械臂E直接搬運至支架單元U6之交接單元 CPL12。在此，如第12圖所示般，被設置在支架單元U6 和洗淨裝置1之間的搬運手段之交接機械臂D2具備有構成 旋轉、進退、升降自如，各專門搬運洗淨前後之晶圓w 之例如兩個機械臂。晶圓W是藉由交接機械臂D2之洗淨 前專用之機械臂，自TRS 12取出，被搬入至洗淨裝置1內 接受背面洗淨。完成洗淨之晶圓W由交接機械臂D2之洗 淨後之專用機械臂載置於TRS 13之後，被取入至介面區塊 S3。並且，第14圖中附CPL的交接單元兼作調溫用之冷 卻單元，附BF之交接單元則兼作可載置多數片晶圓W之 緩衝單元。 接著，藉由介面機械臂B搬運至曝光裝置S4,在此 ，執行特定曝光處理之後，載置於支架單元U6之交接單 元TRS6而返回至處理區塊S2。接著，晶圓W在第1區塊 (DEV層）B1執行顯像處理，藉由搬運機械臂A1被交接至 支架單元U5之交接單元TRS1。之後，經交接機械臂C返 -26 - 200841378 回至載體1〇〇。並且’在第12圖中’⑴至u4爲豐層各個加 熱部和冷卻部之熱系統單元群。 並且，雖然表示第12圖至第14圖所示之塗佈、顯像裝 置，是在介面區塊S3之入口部設置實施形態所涉及之洗 淨裝置1之例，但是設置洗淨裝置1之位置並不限定於該例 。例如，即使在介面區塊S3內設置該洗淨裝置1亦可’即 使構成設置於處理區塊S2之入口部，例如支架單元U5而 將形成光阻膜之前的晶圓予以背面洗淨亦可’即使設置在 載體區塊S1內亦可。 並且，可適用本實施形態所涉及之洗淨裝置1之裝置 並不限定於塗佈、顯像裝置。例如，即使執行例如離子注 入後之退火工程之熱處理裝置，亦可以適用本洗淨裝置1 。當直接對顆粒附著於晶圓W之背面執行退火工程時’ 在該工程中，顆粒進入至晶圓背面，在該顆粒和表面之電 晶體之間形成電流路。因此，於該工程前，藉由將晶圓W 之背面洗淨，可以提升製品之良率。 在此，使用第1圖至第1 1圖所說明之洗淨裝置1、100 中，因防止自晶圓W飛散之洗淨液與上杯罩4 1之內壁面 衝突產生霧而成爲污染源，故上杯罩41之內壁面以飛散之 洗淨液不極力彈回之構件所構成爲佳。例如，第1 5圖所示 之上杯罩4 1是藉由將由液滴難以彈回之材料所構成之覆蓋 構件44內貼於上杯罩4 1之內壁面，成爲抑制產生霧之構成 °作爲如此材料之具體例有例如添加親水劑等施予親水處 理之樹脂製之多孔質材料（多孔質）樹脂，或予以噴砂使內 -27- 200841378 壁面粗面化之氧化鋁等之陶瓷材料等。再者，於如上述般 內貼之時，上杯罩41雖然由例如聚丙烯等之材料所構成， 但是即使藉由先前已述之多孔質材料或陶瓷構成上杯罩41 全體亦可。並且，在第15圖中，省略氣刀31等之記載。 再者，在既已說明之洗淨裝置1、1 〇 〇設置由例如於晶 圓W之背面洗淨時施加於刷具5之推壓力或施加於刷具5 之支撐部5 1之扭力等，並測量刷具5與晶圓W之背面接觸 之力的測量器（測量手段），和使刷具5之支撐部5 1升降之 升降機構（升降手段），和既已說明之控制部6所構成之洗 淨壓控制機構，在晶圓W之背面即使以刷具5接觸至晶圓 W背面之力在事先所設定之範圍內之値幾乎成爲一定之方 式，使刷具5升降亦可。再者，即使取代刷具5之升降，藉 由使吸附台2或旋轉夾具3升降，使晶圓 W上下，控制刷 具5接觸之力亦可。將藉由刷具5與晶圓W接觸之力保持 一定，使顆粒之除去率安定，並且因不對晶圓 W施予過 大力量，故可以防止晶圓W自吸附台2或旋轉夾具3脫離 〇 如此一來，將刷具5推抵至晶圓W背面而執行洗淨之 手法由其於晶圓W背面爲親水性之時特別有效。另外， 對於晶圓W之表面，有藉由與疏水化處理劑之蒸氣接觸 ，執行提升與光阻膜之密接性之疏水化處理之情形。當於 該疏水化處理之時，處理劑之蒸氣之一部份流入晶圓之背 面側時，例如晶圓W之背面周緣部也被疏水化。在被疏 水化之區域，洗淨液難以充分遍及四處，當直接推壓刷具 -28- 200841378 5而使旋轉時，刷具之纖維被掘削而產生多量顆粒，有污 染晶圓W之虞。在此，於洗淨被疏水化處理之晶圓W之 周緣區域時等，例如第1 6圖所示般，在刷具5之前端和晶 圓W之背面之間以產生例如1 mm以下之間隙之方式配置 刷具5，在該狀態下，自先前已述之洗淨噴嘴5a供給洗淨 液使刷具5旋轉而執行洗淨即可。若藉由該手法，因利用 藉由刷具5之旋轉激烈攪拌之洗淨液之水勢而執行洗淨， 故可抑制產生來自刷具5之顆粒，並執行洗淨。 再者，因對應於上述疏水化處理之晶圓W，故即使在 例如下杯罩43設置UV燈17，藉由該UV燈17對晶圓W之 周緣區域例如由基板端至中心側25mm照射紫外線，執行 分解疏水化劑之親水化處理後執行洗淨亦可V。於此時， 例如將晶圓W從吸附台2轉接至旋轉夾具之後，一面使旋 轉夾具32旋轉，——面藉由UV光以特定寬度掃描晶圓W之 周緣區域，依此可以使該區域全體親水化。在此，UV燈 1 7即使將例如施予防水處理設置在下杯罩43內亦可，在下 杯罩43之底面設置透過UV光之玻璃窗，在該下方側設置 UV燈亦可。並且，照射UV光之區域並不限定於晶圓W 背面之周緣區域，即使照射於例如晶圓W之背面當然亦 可。並且，在第17圖中，省略氣刀31等。再者，即使設置 在UV燈以外之處，藉由導光光纖設置照射頭亦可。 再者，在氣刀31內部中，由於自氣刀31所噴射之氣體 形成上昇氣流，有自旋轉夾具3之驅動機構3 3或支撐消3 2 之升降機構32a等所產生之顆粒藉由該上昇氣流流出至氣 -29- 200841378 刀外側之虞。在此，即使將例如氣刀3 1內側之環境予以抽 氣排氣，藉由將藉由該氣刀31和晶圓W背面所包圍之空 間保減壓環境’抑制上昇氣流之產生亦可。 在相同之氣刀31中，爲了藉由該氣刀31吹散來自刷具 5側之洗淨液全體，必須噴射大量氣體，消耗能量變多， 並且也有由於大量氣體所吹散之洗淨液成爲霧而成爲新污 染源之情形。在此，例如第1 8圖所示般，即使以描畫出遮 φ 蔽氣刀3 1和刷具5之間的軌跡之方式，設置吐出DIW等之 洗淨水之流體吐出手段之輔助沖洗機構34，藉由改變依據 該純水之流路自刷具5側流出之洗淨液之流動方向，使朝 向氣刀3 1之洗淨液之流動氣勢變弱亦可。'依此，減少爲了 吹散淨液所需之氣體量，可以減少能量消耗，並且可抑制 產生霧。而且，即使取代吐出洗淨液之輔助沖洗機構34， 將吐出壓縮氣體而遮蔽氣刀3 1和刷具5之間之·噴嘴當作流· 體吐出手段而予以設置亦可。 • 接著，針對第1保持手段之吸附台2，吸附台2之平面 形狀並不限定於第2圖所示之細長長方形。例如，第1 9圖 所示般，於載置晶圓W時，即使使用具備與該晶圓W構 成同心圓之圓弧狀之吸附保持面之吸附台2亦可。如此之 * 形狀之吸附台2因形成於對向之吸附台2間之區域面積變寬 ，故可以使洗淨液遍及更寬區域，並且於移動刷具5時也 難以造成妨礙。 再者，例如晶圓W載置於旋轉夾具3上洗淨之期間中 ，吸附台2因退壁至晶圓W之下方，故在吸附台2表面滴 -30- 200841378 下洗淨液。因此，當將吸附台2之吸引管連接於例如工場 之真空管線時，洗淨液藉由設置在吸附台2表面之吸附孔 2a而流入，成爲使真空管線之真空度下降之主要原因。 在此，即使如第20圖所示般，在吸附台2之吸引管60介設 截留槽61，將流入吸引管60之洗淨液捕捉於該截留槽60內 防止流出至下流側亦可。再者，即使又如第20圖所示般， 將該吸引管60連接於噴射器62，藉由來自噴射器60之排氣 與工場排氣管線連接，不利用工場之真空管線執行晶圓W 之吸附亦可。 如上述般，當以洗淨液濕潤吸附台2表面之狀態直接 保持晶圓W時，則有吸附台2之吸附力下降於洗淨中晶圓 W脫離之虞，再者，有骯髒之洗淨液污染晶圓W背面， 使洗淨後之晶圓W之清淨度下降之情形。在此，即使如 第21圖（a)、第21圖（b)所示般，在上杯罩41設置例如氣幕 噴嘴45，例如完成晶圓W洗淨，至下一個晶圓W被搬入 之期間中，吹出氣體，使吸附台2表面之洗淨液吹散亦可 。並且，第21圖（a)、第21圖（b)中，省略氣刀31等之記載 【圖式簡單說明】 第1圖表示本發明所涉及之洗淨裝置之斜視圖。 第2圖爲上述洗淨裝置之平面圖。 第3圖爲上述洗淨裝置之縱剖面圖。 第4圖爲表示氣刀之構成之斜視圖。 -31 - 200841378 第5圖爲用以說明上述洗淨裝置之動作的第1工程圖。 第6圖爲用以說明上述洗淨裝置之動作的第2工程圖。 第7圖爲表示洗淨時之晶圚背面之樣子的說明圖。 第8圖爲表示在各動作中被洗淨之區域的平面圖。 第9圖爲第2實施形態所涉及之洗淨裝置之平面圖。 第1 〇圖爲用以說明上述第2實施形態所涉及之洗淨裝 置之動作的第1工程圖。 φ 第1 1圖爲用以說明上述第2實施形態所涉及之洗淨裝 置之動作的第2工程圖。 第12圖爲表示適用上述洗淨裝置之塗佈、顯像裝置之 實施形態之平面圖。 第1 3圖爲上述塗佈、顯像裝置之斜視圖。 第1 4圖爲上述塗佈、顯像裝置之縱剖面圖。 第1 5圖爲將覆蓋構件內貼於內壁面之上杯罩之縱剖面 圖。 • 第16圖爲在晶圓背面和刷具前端之間設置間隙而執行 洗淨之實施形態之說明圖。 第1 7圖爲對被疏水化之晶圓背面側之周緣區域照射 UV光之實施形態之說明圖。 ' 第1 8圖爲設置用以刪減氣刀之氣體消耗量之輔助沖洗 機構之實施形態之說明圖。 第1 9圖爲使用平面形狀爲圓弧狀之吸附台的實施形態 之說明圖。 第20圖爲將截留槽或噴射器設置在吸附台之吸氣管之 -32- 200841378 實施形態的說明圖。 第2 1圖爲具備有氣幕噴嘴之上杯罩之縱剖面圖 【主要元件符號說明】 F :液膜 W :晶圚 1 :洗淨裝置 2 :吸附台 2a :吸附孔 3 :旋轉夾具 3 a :吸附孔 3 b :軸部 5 :刷具 5 a :洗淨液噴嘴 5b :鼓風噴嘴 6 :控制部 1 1 :燈箱 12 : UV 燈 13 :鼓風噴嘴 1 4 :洗淨液噴嘴 1 5 :排氣管 1 6 :排液管 2 0 :井桁 2 1 :墊支撐部 -33- 200841378 橋桁部 皮帶 捲軸 驅動機構 側板 升降機構 z滑動器 =導軌 氣刀 :噴射口 支撐銷 =升降機構 旋轉夾具馬達 上杯罩 :開口部 內杯罩 下杯罩 支撐部 皮帶 捲軸 驅動機構 覆蓋構件 支撐部 乾燥噴嘴 -34- 200841378 100 :基板洗淨裝置Further, as shown in FIG. 3, a drain pipe 16 for discharging the washing liquid stored in the lower cup cover 43 is provided at the bottom of the lower cup cover 43 for exhausting the airflow in the apparatus 1. Two exhaust pipes 15. Since the exhaust pipe 15 prevents the washing liquid stored in the bottom of the lower cup cover 43 from flowing into the exhaust pipe 15, it extends from the bottom surface of the lower cup cover 43 to the upper side, and directly enters the washing liquid which does not drip from above. The exhaust pipe 15 is covered by the inner cup cover 42 which is attached to the annular cover around the air knife 31. In addition, 13 of the figure is used to complete the cleaning of the wafer W -15-200841378, and the blower nozzle 14 for drying the cleaning liquid remaining in the vicinity of the periphery of the wafer from the _h side is used for The cleaning liquid nozzle 5a located at the front end of the support portion 51 of the brush 5 simultaneously supplies the cleaning liquid to the cleaning liquid nozzle on the back surface of the wafer W. Further, the air blowing nozzle 13 is provided with a non-drawing type lifting mechanism, and is retracted to the upper side so as not to interfere with the wafer W or the conveying means during transportation when the wafer is loaded and unloaded. Further, the side wall of the cup cover 43 is provided without extending the belts 23 and 52, and the light box 11 for accommodating the UV lamp 12 is attached. The wafer W to be processed is carried in and out of the cleaning device 1 from the left X direction, and is configured to pass above the UV lamp 12. The UV lamp 12 is a task of irradiating ultraviolet light to the back surface of the wafer W which has been removed by the cleaning to complete the shrinkage of the remaining particles. Further, as shown in Fig. 2, each of the drive mechanisms 25 and 54 and the UV lamp 12, the pressure adjustment unit provided in the exhaust pipe 15 and the like, controls the entire operation of the coating and developing device. The control unit 6 is controlled. The control unit 6 is constituted by a computer having, for example, a program storage unit having no picture, and the program storage unit stores a computer program having a transfer between the adsorption power 2 and the rotating jig 3 and receiving from the external transfer device. The wafer W, or a group of steps (commands) for washing or moving by the brush 5. Then, the computer program is read to the control unit 6, and the control unit 6 controls the operation of the cleaning device 1. Further, the computer program is stored in the program storage unit in a state of being stored in a memory device such as a hard disk, a disc, or a memory card. According to the configuration described above, the operation of cleaning the back surface of the wafer W will be described with reference to Figs. 5 to 8 . Fig. 5 and Fig. 6 are longitudinal cross-sectional views for explaining the respective operations -16-200841378 of the cleaning device 1 for cleaning the back surface of the wafer W. Fig. 7 is an explanatory view showing the appearance of the back surface of the wafer W at the time of cleaning. Further, Fig. 8 is a plan view schematically showing a region where the wafer w is cleaned in various states held by the adsorption power 2 or the rotating jig 3. Further, in these drawings, in order to facilitate the drawing, the description of the UV lamp 12, the air blowing nozzle 13, and the like is appropriately omitted as needed. As shown in Fig. 5(a), for example, the A horseshoe-shaped transport means (the second parent robot arm D2) is inserted into the cleaning device 1 and the opening of the upper cup cover 41 in the same manner as the wafer W to be processed. The upper portion 41a is stopped upward, and the support pin 32 is lifted from below the rotating jig 3 to stand under the conveying means. The transport means is to lower the support pin 3 2 and hand the wafer W to the support pin 3 2 ' to exit the cleaning device 1. At this time, the adsorption stage 2 stands by at a position where the surface of the wafer W is held higher than the upper surface of the brush 5, and the rotating jig 3 is retracted to a position lower than the upper surface of the brush 5. With such a positional relationship, when the support pin 32 is lowered, the wafer W is first delivered to the adsorption stage (Fig. 5(b)). Thereafter, the adsorption stage 2 sucks and holds the wafer W so as not to move the brush from the back surface, and keeps the wafer W directly moved to the right direction. Then, after transporting to the position where the wafer W is determined in advance (for example, the position where the left end of the air knife 3 1 and the left end of the wafer W slightly coincide with each other), the adsorption stage 2 is lowered, and the back surface of the wafer W is pressed onto the upper surface of the brush 5 (the 5 Figure (c)). Next, after the air knife 31 is operated to prevent the cleaning liquid from flowing back to the surface of the rotating jig 3, the cleaning liquid is supplied from the cleaning liquid nozzle 5a at the tip end of the support portion 51, and the brush 5 is rotated to start cleaning the wafer W. Wash the back. The backside cleaning is performed by a combination of the movement of the wafer W of the adsorption stage 2 and the movement of the brush 5. Specifically, as shown in FIG. 8( a ), the brush 5 is reciprocated in the Y direction of -17-200841378 in the figure, and when the moving direction of the brush 5 is switched, the suction table 2 is only the brush 5 . The short distance is moved to the left X direction. Accordingly, the brush 5 is drawn on the back surface of the wafer W by the trajectory indicated by the arrow, and the four areas of the area Τ1 painted by the upper left oblique line in the same figure can be washed. Here, in the period in which the cleaning is performed, the entire back surface of the wafer W is covered with the liquid film F of the cleaning liquid as shown in Fig. 7, and the particles removed by the brush 5 are discharged from the back surface of the wafer W. The washing liquid is simultaneously flushed to the lower cup cover 43. Further, the gas is ejected toward the back surface of the wafer W from the discharge port 31 1 a of the air knife 3 1 , and the cleaning liquid is blown toward the outside of the air knife 3 1 , thereby maintaining the back surface of the wafer W facing the air knife 31 . Dry state. With such a configuration, it is possible to prevent the cleaning liquid covering the back surface of the wafer W from flowing back to the inside of the air knife 31. As a result, the surface of the rotating jig 3 is often maintained in a dry state to prevent contamination or watermarking due to the treated cleaning liquid. When the cleaning of the above region T1 is completed, the adsorption stage 2 is moved so that the central portion of the wafer W is positioned above the rotating jig 3 (Fig. 6(a)), and then, the transfer of the wafer W from the adsorption stage 2 to the rotation is performed. Fixture 3. The transfer of the wafer W is performed, for example, by operating the air knife 31, directly stopping the movement or rotation of the brush 5, supplying the cleaning liquid, releasing the wafer W by the adsorption stage 2, and raising the retracted rotating jig 3 The back surface of the wafer W is supported, and then performed by retracting the adsorption stage 2 to the lower side. The rotating jig 3 that has received the wafer W adsorbs and holds the wafer W at substantially the same height as the adsorption stage 2, so that the brush 5 is pressed against the wafer W. Here, the brush 5 is rotated again, and the washing liquid is supplied to start the back washing again (Fig. 6(b)). At this time, the back washing is performed by a combination of the rotation of the rotating jigs 3-18-200841378 and the movement of the brush 5. Specifically, for example, as shown in FIG. 8(b), first, the brush 5 is moved to a position where the outermost circumference of the wafer W can be cleaned, and then the wafer w is slowly rotated, and when the wafer W is rotated, the brush is made The movable portion 5 is moved to an annular region that has been washed by the previous motion, and the position on the inner circumferential side can be washed only by the diameter portion of the brush 5, and the same operation is repeatedly performed. By doing so, the concentric circular trajectory is drawn, and while the back surface of the wafer W is moved, the four regions T2 of the image drawn in the upper right oblique line in the same figure can be washed. Here, the area of the combined region T1 and the region T2 includes the entire back surface of the wafer W as shown in FIG. 8(b), and the size or moving range of each machine is adjusted so as not to cause an ineffective space that cannot be cleaned. . In addition, in the period in which the wafer W is held by the rotating jig 3 and the cleaning is performed, not only the cleaning liquid nozzle 5a on the side of the brush 5 but also the left side of the air knife 31 in FIG. 6(b) The cleaning liquid nozzle 14 supplies the cleaning liquid. When the area where the surface of the wafer W is wetted and the area to be dried are mixed, since the watermark is generated when the cleaning liquid is dried, the water-repellent liquid is suppressed from being generated in four places. As a result, when the entire back surface of the wafer W is cleaned, the rotation or movement of the brush 5, the supply of the cleaning liquid, and the rotation of the rotating jig 3 are stopped, and the drying operation of the cleaning liquid is performed. The spin drying is performed by rotating the rotating jig 3 at a high speed to remove the cleaning liquid adhering to the back surface of the wafer W. As previously described, the wetted wafer W is dried in one breath to suppress the generation of a watermark. At this time, the air drum nozzle 13 that has been retracted to the upper side is lowered, and the wind drum nozzle 5b of the lateral side of the brush 5 is placed on the peripheral edge portion of the wafer W, and the support portion 51 is moved by the upper surface of the peripheral portion of the wafer. The air is blown out below to promote the drying. Further, in the second region held by the rotary jig 3, the spin-drying is not performed, but in the state of being dried by the air knife 31, the water is hardly generated due to contact with the rotating jig 3. By the above-described operation, the entire back surface of the wafer W is washed and dried, and the wafer W is transferred to the transporting means in the opposite operation to the loading and carried out. At this time, the UV lamp 12 shown in FIGS. 1 to 3 is turned on, and ultraviolet rays are irradiated from the lower side of the horseshoe-shaped conveying means toward the back surface of the wafer W, even if the particles are attached, for example, the organic matter is irradiated with ultraviolet rays. It is decomposed by irradiation, so that shrinkage of such a type of particles can reduce the influence of defocusing or the like. In parallel with the unloading operation of the wafer W, the adsorption stage 2 or the rotating jig 3 is moved to the position shown in Fig. 5(a), and the next wafer W is carried in. Then, the operations described in the fifth to eighth drawings are repeated, and the plurality of wafers W are sequentially washed. Next, the second embodiment will be described with reference to Figs. 9 to 11 . Fig. 9 is a plan view showing a configuration of a cleaning device 1A according to a second embodiment, and Figs. 1 and 11 are vertical cross-sectional views showing the action. In the drawings, the same reference numerals as those used in the first to eighth embodiments are given to the same configurations as those of the first embodiment. The cleaning device according to the second embodiment is a point at which the rotating jig 3 belonging to the second substrate holding means is retracted below the second region of the wafer W, and the wafer W is moved in the lateral direction with respect to the rotating jig. The implementation is different. In the second embodiment, the well 20 is fixed in the X direction and can be raised and lowered only in the Z direction. The lifting mechanism 27 (refer to FIG. 1) and the -20-200841378 lifting and lowering mechanism for raising and lowering the rotary clamp are configured to hold the second substrate holding means to the first substrate holding means. The means of lifting the relative lift. Further, the brush 5 is such that the support portion 51 is fixed to the lower cup cover 43 at the proximal end side. Since the support portion 51 is configured to be pivotable about the support shaft of the base end portion, the wafer W can be removed from the central region (second region) by the brush 5 without moving the wafer W in the lateral direction. The base end side of the support portion 51. Further, on the opposite side of the brush 5, the support portion 72 that is stretchable and contractible is attached to the φ lower cup cover 43 to prevent the cleaning of the second region cleaning to be retracted to the lower rotating jig 3 The waterproof member is, for example, a cover member 71 made of a fluororesin. Further, the support portion 72 is provided with a drying nozzle 73 for completing the task of drying the second region, and the gas can be ejected toward the second region. Further, in the present embodiment, since the air knife 3 is not provided around the rotating jig 3, a gas such as a nitrogen gas is ejected downward from the outer edge portion of the covering member 71, and the mist is washed. It is not attached to the rotating jig 3. When the operation of the cleaning device 100 according to the second embodiment is described, the rotation jig 3 is retracted to the lower cup cover 43 when the wafer W is loaded as shown in Fig. 10(a). Below, the cover member 71 is further retracted to the side of the upper side of the rotating jig 3. In this state, the lift pins 3 2 to 2 are lifted and received by the transport means D2, and the wafer W is adsorbed and held on the adsorption stage 2. Next, as shown in FIG. 10(b), the lift pin 32 is retracted to the position of the rotating jig 3, and the covering member 71 is advanced, and after being placed above the rotating jig 3, the brush 5 is moved to the wafer W. Slightly central. Then, the adsorption -21 - 200841378 stage 2 is lowered, and the center portion of the wafer W containing the second region is started to be washed. At this time, the rotating jig 3 is retracted to the lower side of the second region during cleaning, but the covering member 71 is an umbrella, and the covering member 71 ejects gas downward, and since the mist does not adhere, the rotating jig 3 remains dry. . When the cleaning of the central portion of the wafer W is completed, the brush 5 is retracted to the side, and the gas is ejected from the drying nozzle 73 toward the second region, thereby drying the region. Then, as shown in Fig. 1, after the covering member 71 is retracted to the side, the rotating jig 3 is raised, and the wafer W is transferred from the adsorption stage 2 to the rotating jig 3, and the adsorption and retention are completed and washed. The second area. Then, while the rotation of the wafer W and the movement of the brush 5 are combined, the back surface of the wafer W other than the second region which has not been cleaned is washed. At this time, since the covering member 71 is retracted to the side, the lift pin 32 may be stored in the sheath body or the like without being in contact with the washing liquid. When the cleaning is completed, the rotating jig 3 is rotated and dried by the wafer W, and then the wafer W is carried out from the lift pin 32 to the outside by the operation opposite to the carry-in time. Device 1 00 external. Further, although not shown in Fig. 9, at this time, it is of course possible to perform ultraviolet irradiation by a UV lamp on the back surface of the wafer W. According to the cleaning apparatuses 1 and 100 according to the present embodiment, the following effects are obtained. Since the wafer is held by the back surface of the support wafer W, the cleaning is performed directly in such a state, so that it is not necessary to provide a space for reversing the wafer w reversing machine or performing the wafer W reversal operation except for the cleaning device 1. Space. As a result, it is possible to reduce the size of the coating and developing device provided with the cleaning device 1 and 100 compared to the conventional type. -22- 200841378 In addition, since the cleaning device 1 and 100 switch the wafer w between the two substrate holding means (the adsorption stage 2 and the rotating jig 3), the adsorption stage 2 or the rotating jig may not be generated. 3 Invalid space that is covered and cannot be washed. Accordingly, since the generation of the ineffective space is avoided, it is not necessary to mechanically hold the peripheral portion of the wafer W, and the peripheral portion of the wafer W is not damaged, and the cleaning can be performed, and the generation of particles or the photoresist film can be prevented. Damage contributes to the yield of the lifted product. Further, in the cleaning apparatuses 1 and 1 according to the present embodiment, after the cleaning is completed, the cleaning liquid adhering to the wafer W is dried by drying, and gas is placed around the rotating jig 3. When the wafer W is delivered to the rotating jig 3, the blade 3 is in contact with each other in a state where the surface of the rotating jig 3 and the back surface (second region) of the substrate supported by the rotating jig are mutually dried. By these mechanisms, the watermark generated in the wafer W or the rotating jig 3 is suppressed, and the back surface of the cleaned wafer W can be prevented from being contaminated again. Further, in the cleaning device 1 and 100, the cleaning member is a brush member 5 having a high cleaning effect, but the cleaning member is not limited thereto. For example, even if a two-fluid nozzle, a spray nozzle, a mechanical nozzle or the like is used, a cleaning member of a type in which particles are removed by blowing a cleaning liquid or the like can be used. Further, in the embodiment, the rotary brush 5 is exemplified, but the vibration type brush may be used instead of the brush type, and the type of the cleaning liquid is not limited to DIW, and even other cleaning liquids may be used. . Further, as shown in the embodiment, the substrate holding means provided in the cleaning device is not limited to two types (the adsorption stage 2 and the rotating jig 3) as in the embodiment. For example, there are three or more types of substrate holding means, and it is also possible to transfer the substrate twice or more between the holding means in -23-200841378. At this time, it can be explained that the final substrate is held as the second substrate holding means, and the substrate is held as the first substrate holding means. Next, an example in which the above-described cleaning device 1 is applied to the developing device will be briefly described. Fig. 12 is a plan view showing a system for attaching an exposure apparatus to a coating and developing apparatus, and Fig. 13 is a perspective view of the same system. Furthermore, Fig. 14 is a longitudinal sectional view of the same system. The coating and developing device is provided with a carrier block S1, and the transfer robot C is taken out from the sealed carrier 1 placed on the mounting table 101, and the wafer W is taken out and delivered to the processing block S2, and The transfer robot C receives the processed wafer W from the processing block S2 and returns to the carrier 100. The cleaning device 1 (or the cleaning device 100, the same applies hereinafter) of the present embodiment processes the wafer w. When the block S2 is delivered to the exposure device S4, as shown in Fig. 12, the back surface of the wafer W to be processed is subjected to cleaning at the entrance of the interface block S3. The processing block S2 is as shown in FIG. 13, and in this example, the first block (DEV layer) B1 for performing the development processing is laminated in the lower layer, and is formed under the photoresist film. a second block (BCT layer) B2 for forming a side anti-reflection film, and a third block (COT layer) B3 for performing coating of the photoresist film for performing formation on the upper layer side of the photoresist film The fourth block (TCT layer) B4 is formed by the reflection preventing film. The second block (BCT layer) B2 and the fourth block (TCT layer) B4 are coating units involved in the present embodiment in which the chemical solution for forming each of the anti-reflection films is applied by a spin coating, and a processing unit group of a heating and cooling system for performing pre-treatment and post-treatment of -24-200841378 performed by the coating unit, and disposed between the coating unit and the processing unit group, between The transport robot arms A2 and A4 that perform the transfer of the wafer w are configured. Even for the third block (COT layer) B 3, the above-mentioned chemical liquid is the same as the photoresist liquid, and the first block (DEV layer) B1 is laminated in one DEV layer. Two-layer developing unit 110. Then, in the DEV layer B1, a transport arm A1 for transporting the wafer W to the two-layer developing unit 11 is provided. In other words, the transport robot arm A1 is common to the development unit of the two stages. Further, in the processing block S2, as shown in FIGS. 12 and 14, a holder unit U5 is provided, and the wafer from the carrier block si is lifted freely by the first transfer provided in the vicinity of the holder unit U5. The robot arm D1 is sequentially transported to one of the above-described bracket units U 5, for example, the corresponding transfer unit CPL2 of the second block (BCT layer) B2. Next, the wafer W is transported from the transfer unit CPL2 to each unit (the anti-reflection film unit and the processing unit group of the heating and cooling system) by the transfer robot A2 in the second block (BCT layer) B2. These units form an antireflection film. Then, the wafer W is placed in the transfer unit BF2 of the rack unit U5, the lift robot arm D1 in the vicinity of the rack unit U5, the transfer unit CPL3 of the rack unit U5, and the transport robot A3. The 3 block (COT layer) forms a photoresist film. Further, the wafer W is delivered from the transfer robot A3 to the transfer unit BF3 of the holder unit. Further, the wafer on which the photoresist film is formed may be formed in the fourth block (TCT layer - 25 - 200841378) B4 to form an anti-reflection film. In this case, the wafer W is delivered to the transport robot A4 via the delivery unit CPL4, and the anti-reflection film is formed, and then transferred to the delivery unit TRS4 by the transport robot A4. Further, a shuttle robot arm E for transporting the wafer W directly from the delivery unit CPL11 provided in the holder U5 to a dedicated conveyance means provided in the delivery unit CPL 12 of the holder unit U6 is provided in the upper portion of the DEV layer B1. The wafer W on which the photoresist film or the anti-reflection film is formed is transferred to the delivery unit CPL11 via the transfer robots D1 from the transfer units BF3 and TRS4, and is then directly transported to the delivery unit CPL12 of the holder unit U6 by the shuttle arm E. Here, as shown in Fig. 12, the transfer robot D2 provided in the transport means between the holder unit U6 and the cleaning device 1 is provided with a structure that rotates, advances and retreats, and moves up and down. For example, two robot arms of the circle w. The wafer W is taken out from the TRS 12 by the robot arm dedicated to the cleaning of the transfer robot D2, and is carried into the cleaning device 1 to be washed on the back side. The finished wafer W, which has been cleaned by the transfer robot D2, is placed after the TRS 13, and is taken into the interface block S3. Further, the transfer unit with CPL in Fig. 14 also serves as a cooling unit for temperature adjustment, and the transfer unit with BF also serves as a buffer unit for mounting a plurality of wafers W. Then, it is transported to the exposure device S4 by the interface robot B. Here, after the specific exposure processing is performed, the transfer unit TRS6 placed on the holder unit U6 is returned to the processing block S2. Next, the wafer W is subjected to development processing in the first block (DEV layer) B1, and is transferred to the delivery unit TRS1 of the holder unit U5 by the transport robot A1. After that, it is returned to the carrier 1〇〇 by the transfer robot C back to -26 - 200841378. And, in Fig. 12, '(1) to u4 are the thermal system unit groups of the respective heating portions and the cooling portions of the layer. Further, although the coating and developing apparatus shown in FIGS. 12 to 14 is provided, the cleaning device 1 according to the embodiment is provided at the entrance of the interface block S3, but the cleaning device 1 is provided. The position is not limited to this example. For example, even if the cleaning device 1 is disposed in the interface block S3, the wafer before the photoresist film can be back-washed even if it is formed at the entrance portion of the processing block S2, for example, the holder unit U5. 'Even if it is placed in the carrier block S1. Further, the apparatus to which the cleaning apparatus 1 according to the present embodiment is applicable is not limited to the application and development apparatus. For example, the cleaning apparatus 1 can be applied even if a heat treatment apparatus such as an annealing process after ion implantation is performed. When the annealing process is performed directly on the back side of the wafer attached to the wafer W. In this process, the particles enter the back side of the wafer, forming a current path between the particles and the surface of the transistor. Therefore, the yield of the product can be improved by washing the back side of the wafer W before the project. Here, in the cleaning apparatuses 1 and 100 described with reference to FIGS. 1 to 1 , the cleaning liquid from the wafer W is prevented from colliding with the inner wall surface of the upper cup cover 4 1 to cause fogging, thereby becoming a source of pollution. Therefore, it is preferable that the inner wall surface of the upper cup cover 41 is constituted by a member in which the scattered washing liquid is not strongly rebounded. For example, the cup cover 4 1 shown in Fig. 15 is attached to the inner wall surface of the upper cup cover 4 1 by a cover member 44 made of a material which is difficult to bounce back by the liquid droplets, thereby suppressing the formation of mist. Specific examples of such a material include a porous material (porous) resin obtained by adding a hydrophilic agent such as a hydrophilic agent, or a ceramic material such as alumina which is sandblasted to roughen the inner surface of the inner layer -27-200841378. . Further, when the inner cup cover 41 is made of a material such as polypropylene, the upper cup cover 41 may be formed of the upper cup cover 41 by the porous material or ceramic which has been described above. Further, in Fig. 15, the description of the air knife 31 and the like is omitted. Further, in the cleaning devices 1 and 1 described above, for example, the pressing force applied to the brush 5 at the time of washing the back surface of the wafer W or the torsion force applied to the support portion 51 of the brush 5 is set. And a measuring device (measuring means) for measuring the force of the brush 5 in contact with the back surface of the wafer W, and a lifting mechanism (elevating means) for raising and lowering the supporting portion 5 1 of the brush 5, and the control portion 6 which has been described The cleaning pressure control mechanism is configured such that even if the force of the brush 5 contacting the back surface of the wafer W is within a predetermined range on the back surface of the wafer W, the brush 5 can be raised and lowered. . Further, even if the lifting and lowering of the brush 5 is performed, the suction table 2 or the rotating jig 3 can be moved up and down to raise the wafer W up and down, and the force for controlling the brush 5 can be controlled. The force of contact between the brush 5 and the wafer W is kept constant, the removal rate of the particles is stabilized, and since the wafer W is not excessively applied, the wafer W can be prevented from being detached from the adsorption stage 2 or the rotating jig 3. In this way, the method of performing the cleaning by pushing the brush 5 against the back surface of the wafer W is particularly effective when it is hydrophilic on the back surface of the wafer W. Further, on the surface of the wafer W, a hydrophobic treatment for improving the adhesion to the photoresist film is performed by contact with the vapor of the hydrophobizing agent. At the time of the hydrophobization treatment, when a part of the vapor of the treating agent flows into the back side of the wafer, for example, the peripheral portion of the back surface of the wafer W is also hydrophobized. In the area where it is rehydrated, it is difficult for the cleaning liquid to spread all over the place. When the brush -28-200841378 5 is directly pressed and rotated, the fibers of the brush are boring to produce a large amount of particles, which may contaminate the wafer W. Here, when the peripheral region of the wafer W to be hydrophobized is washed, for example, as shown in FIG. 6, between the front end of the brush 5 and the back surface of the wafer W, for example, 1 mm or less is generated. In this state, the brush 5 is placed in a gap, and the cleaning liquid is supplied from the cleaning nozzle 5a described above to rotate the brush 5 to perform cleaning. According to this method, since the washing is performed by the water potential of the washing liquid which is vigorously stirred by the rotation of the brush 5, generation of particles from the brush 5 can be suppressed and washing can be performed. Further, since the wafer W corresponding to the hydrophobization treatment is provided, even if the UV lamp 17 is provided, for example, in the lower cup cover 43, the peripheral region of the wafer W is irradiated with the peripheral portion of the wafer W by, for example, 25 mm from the substrate end to the center side. Ultraviolet rays are subjected to a hydrophilization treatment to decompose the hydrophobizing agent, and then the cleaning can be performed. At this time, for example, after the wafer W is transferred from the adsorption stage 2 to the rotating jig, the rotating jig 32 is rotated, and the peripheral surface of the wafer W is scanned with a specific width by UV light, thereby making it possible to The entire area is hydrophilized. Here, the UV lamp 17 may be provided with a glass window that transmits UV light on the bottom surface of the lower cup cover 43 even if the water-repellent treatment is applied to the lower cup cover 43, for example, and a UV lamp may be provided on the lower side. Further, the region where the UV light is irradiated is not limited to the peripheral region of the back surface of the wafer W, and it is of course possible to irradiate, for example, the back surface of the wafer W. Further, in Fig. 17, the air knife 31 and the like are omitted. Furthermore, even if it is disposed outside the UV lamp, the illumination head can be provided by the light guiding fiber. Further, in the inside of the air knife 31, since the gas ejected from the air knife 31 forms an ascending air current, the particles generated by the driving mechanism 33 of the self-rotating jig 3 or the elevating mechanism 32a supporting the cleaning 32 are used by the The updraft flows out to the outside of the knife -29- 200841378. Here, even if the environment inside the air knife 31 is evacuated, the space can be suppressed by the space-reducing and decompressing environment surrounded by the air knife 31 and the back surface of the wafer W. In the same air knife 31, in order to blow off the entire cleaning liquid from the side of the brush 5 by the air knife 31, a large amount of gas must be ejected, energy consumption is increased, and there is also a washing liquid which is blown off by a large amount of gas. It becomes a situation where it becomes a new source of pollution. Here, for example, as shown in FIG. 18, an auxiliary flushing mechanism for discharging the fluid discharge means for washing water such as DIW is provided so as to trace the trajectory between the air-shielding blade 3 1 and the brush 5. 34. By changing the flow direction of the washing liquid flowing out from the side of the brush 5 according to the pure water flow path, the flow potential of the washing liquid toward the air knife 31 may be weakened. 'According to this, the amount of gas required to blow off the clean liquid can be reduced, energy consumption can be reduced, and fog generation can be suppressed. Further, even if the auxiliary flushing mechanism 34 that discharges the cleaning liquid is replaced, the compressed gas is discharged, and the nozzle between the air knife 31 and the brush 5 may be disposed as a flow/body discharge means. Next, with respect to the adsorption stage 2 of the first holding means, the planar shape of the adsorption stage 2 is not limited to the elongated rectangular shape shown in Fig. 2. For example, as shown in Fig. 9, when the wafer W is placed, the adsorption stage 2 having an arc-shaped adsorption holding surface concentric with the wafer W may be used. Since the area of the adsorption table 2 having such a shape is widened by the area formed between the opposing adsorption stages 2, the cleaning liquid can be spread over a wider area, and it is less likely to be hindered when the brush 5 is moved. Further, for example, during the period in which the wafer W is placed on the rotating jig 3 for cleaning, the adsorption stage 2 is evacuated to the lower side of the wafer W, so that the cleaning liquid is dripped on the surface of the adsorption stage 2 at -30-200841378. Therefore, when the suction pipe of the adsorption stage 2 is connected to, for example, a vacuum line of a factory, the cleaning liquid flows in through the adsorption holes 2a provided on the surface of the adsorption stage 2, and this causes a decrease in the degree of vacuum of the vacuum line. Here, as shown in Fig. 20, the suction pipe 60 of the adsorption stage 2 is interposed with the trapping groove 61, and the washing liquid that has flowed into the suction pipe 60 is caught in the trapping groove 60 to prevent the flow to the downstream side. Further, even if the suction pipe 60 is connected to the ejector 62 as shown in Fig. 20, the exhaust gas from the ejector 60 is connected to the factory exhaust line, and the wafer W is not executed by the vacuum line of the factory. The adsorption can also be. As described above, when the wafer W is directly held while the surface of the adsorption stage 2 is wetted by the cleaning liquid, the adsorption force of the adsorption stage 2 is lowered, and the wafer W is detached during the cleaning, and further, it is dirty. The cleaning liquid contaminates the back surface of the wafer W, and the cleanliness of the cleaned wafer W is lowered. Here, even as shown in Figs. 21(a) and 21(b), for example, the air curtain nozzle 45 is provided in the upper cup cover 41, for example, the wafer W is washed, and the next wafer W is carried in. During this period, the gas is blown off, and the washing liquid on the surface of the adsorption stage 2 may be blown off. In the drawings (a) and (b) of FIG. 21, the description of the air knife 31 and the like is omitted. [Brief Description of the Drawings] Fig. 1 is a perspective view showing the cleaning device according to the present invention. Fig. 2 is a plan view of the above cleaning device. Fig. 3 is a longitudinal sectional view of the above cleaning device. Fig. 4 is a perspective view showing the configuration of an air knife. -31 - 200841378 Fig. 5 is a first engineering diagram for explaining the operation of the above-described cleaning device. Fig. 6 is a second engineering diagram for explaining the operation of the above cleaning device. Fig. 7 is an explanatory view showing the state of the back surface of the wafer at the time of washing. Fig. 8 is a plan view showing a region which is washed in each operation. Fig. 9 is a plan view showing the cleaning device according to the second embodiment. The first drawing is a first drawing for explaining the operation of the cleaning device according to the second embodiment. φ Fig. 1 is a second drawing for explaining the operation of the cleaning device according to the second embodiment. Fig. 12 is a plan view showing an embodiment of a coating and developing device to which the above cleaning device is applied. Fig. 13 is a perspective view of the above coating and developing device. Fig. 14 is a longitudinal sectional view of the above coating and developing device. Fig. 15 is a longitudinal sectional view showing the cup cover attached to the inner wall surface of the covering member. • Fig. 16 is an explanatory view showing an embodiment in which a gap is provided between the back surface of the wafer and the tip end of the brush to perform cleaning. Fig. 17 is an explanatory view showing an embodiment in which ultraviolet light is irradiated to the peripheral region on the back side of the wafer to be hydrophobized. Fig. 18 is an explanatory view showing an embodiment of an auxiliary flushing mechanism for reducing the gas consumption of the air knife. Fig. 19 is an explanatory view showing an embodiment in which an adsorption stage having a circular arc shape is used. Fig. 20 is an explanatory view showing an embodiment of a suction pipe or an ejector provided in an intake pipe of a suction stage. Fig. 2 is a longitudinal sectional view of a cup cover having a gas curtain nozzle [Description of main components] F: liquid film W: wafer 1 : cleaning device 2: adsorption table 2a: adsorption hole 3: rotating jig 3 a : adsorption hole 3 b : shaft portion 5 : brush 5 a : cleaning liquid nozzle 5 b : air blowing nozzle 6 : control portion 1 1 : light box 12 : UV lamp 13 : air blowing nozzle 1 4 : cleaning liquid nozzle 1 5 : Exhaust pipe 1 6 : Drain pipe 2 0 : Well 桁 2 1 : Pad support -33- 200841378 Bridge 皮带 belt reel drive mechanism Side plate lifting mechanism z Slider = Guide air knife: Injection port support pin = Lifting mechanism rotation Clamp motor upper cup cover: opening part inner cup cover lower cup cover support part belt reel drive mechanism covering member support part drying nozzle-34- 200841378 100 : substrate cleaning device

Claims (1)

200841378 十、申請專利範圍 1.一種基板洗淨裝置，屬於洗淨基板背面之基板洗淨 裝置，其特徵爲：具備 第1基板保持手段，水平吸附保持朝向下方之基板背 面之第1區域； 第2基板保持手段，藉由該第1基板保持手段接收基板 ，水平吸附保持不與上述第1區域重疊之基板背面之第2區 域； 洗淨液供給手段，對吸附保持於上述第1基板保持手 段或第2基板保持手段之基板背面供給洗淨液； 乾燥手段，於從上述第1基板保持手段將基板交接至 上述第2基板保持手段之前，用以乾燥上述第2區域； 洗淨構件，基板藉由第1基板保持手段被保持之期間 ，與含有上述第2區域之基板的背面接觸而洗淨，該基板 藉由上述第2基板保持手段被保持之期間，與上述第2區域 以外之基板的背面接觸而洗淨。 2 .如申請專利範圍第1項所記載之基板洗淨裝置，其 中，上述第2基板保持手段構成保持基板之中央而繞垂直 旋轉自如，並構成使完成藉由上述洗淨構件之洗淨的基板 旋轉而甩乾殘留於基板背面之洗淨液。 3. 如申請專利範圍第1項或第2項所記載之基板洗淨裝 置，其中，上述乾燥手段爲將氣體噴射至基板背面之手段 〇 4. 如申請專利範圍第1項或第2項所記載之基板洗淨裝 -36- 200841378 置，其中，具有使上述第1基板保持手段對上述第2基板保 持手段相對性橫方向移動之移動手段，藉由該移動手段使 既已洗淨之第2區域位於第2基板保持手段之上方。 5 .如申請專利範圍第4項所記載之基板洗淨裝置，其 中，上述第1基板保持手段具備吸附保持面爲長方形之兩 個吸附台，該些吸附台是以上述吸附保持面之長邊方向相 對於該第1基板保持手段之移動方向成爲平行之方式，保 持基板邊緣部之對向的兩處區域。 6. 如申請專利範圍第4項所記載之基板洗淨裝置，其 中，上述第1基板保持手段具備吸附保持面爲圓弧狀之兩 個吸附台，該些吸附台是以構成與被吸附保持之基板同心 圓之方式，保持基板邊緣部之對向的兩處區域。 7. 如申請專利範圍第4項所記載之基板洗淨裝置，其 中，具備構成包圍保持於上述第1基板保持手段或第2基板 保持手段之基板，藉由上述移動手段與第1基板保持手段 同時移動之杯罩。 8. 如申請專利範圍第7項所記載之基板洗淨裝置，其 中，上述杯罩之內壁面是以難以彈回飛散至該內壁面之洗 淨液之材料所構成。 9. 如申請專利範圍第8項所記載之基板洗淨裝置，其 中，難以彈回上述洗淨液之材料爲親水性之多孔質樹脂。 10. 如申請專利範圍第8項所記載之基板洗淨裝置，其 中，難以彈回上述洗淨液之材料爲表面被粗面化之陶瓷。 1 1 .如申請專利範圍第4項所記載之基板洗淨裝置，其 -37- 200841378 中，具備包圍上述第2基板保持手段之包圍構件， 上述乾燥手段具備有沿著周方向形成於該包圍構件之 上端的氣體噴射口。 1 2 ·如申請專利範圍第1 1項所記載之基板洗淨裝置， 其中，藉由上述包圍構件，和吸附保持於上述第1基板保 持手段或第2基板保持手段之基板背面所包圍之空間爲減 壓環境。 φ 1 3 .如申請專利範圍第11項所記載之基板洗淨裝置， 其中，爲了改變從上述洗淨液供給手段朝向上述包圍構件 之上端流經基板背面之洗淨液之流動方向，具有以描畫出 遮斷該些洗淨液供給手段和包圍構件之上端之間的軌跡之 方式，吐出流體之流體吐出手段。 1 4.如申請專利範圍第1 3項所記載之基板洗淨裝置， 其中，自上述流體吐出手段所吐出之流體爲洗淨液。 1 5 ·如申請專利範圍第1或2項所記載之基板洗淨裝置 • ，其中，具備用以使上述第2基板保持手段對上述第1基板 保持手段相對性升降之升降手段，和覆蓋該第2基板保持 手段之上面的覆蓋構件， 在使第2基板保持手段退避至藉由第1基板保持手段所 ^ 保持之基板之上述第2區域之下方，並且使上述覆蓋構件 位置於該第2基板保持手段之上方之狀態下，藉由上述洗 淨構件洗淨該第2區域。 1 6.如申請專利範圍第1或2項所記載之基板洗淨裝置 ，其中，又具備有用以對藉由上述洗淨構件所洗淨之後的 -38- 200841378 基板背面照射紫外光，使殘留於基板背面之粒子收縮之紫 外線燈。 17. 如申請專利範圍第1或2項所記載之基板洗淨裝置 ，其中，又具備有：測量上述洗淨構件與基板背面接觸之 力的測量手段；使該洗淨構件對上述基板相對性升降之升 降手段；和根據藉由上述測量手段之測量結果使上述升降 手段動作，控制上述洗淨構件與基板背面接觸之力成爲使 先所定之範圍內之値的控制手段。 18. 如申請專利範圍第1或2項所記載之基板洗淨裝置 ，其中，上述基板背面之周緣區域被疏水化處理，上述洗 淨構件於洗淨該周緣區域之時，不與該基板背面接觸，攪 拌藉由上述洗淨液供給手段所供給之洗淨液，利用該所攪 拌之洗淨液之水勢，洗淨上述周緣區域內之基板背面。 19. 如申請專利範圍第1或2項所記載之基板洗淨裝置 ，其中，上述基板背面之周緣區域被疏水化處理，爲了將 該周緣區域予以親水化，具備照射紫外光之第2紫外線燈 〇 2 0.如申請專利範圍第1或2項所記載之基板洗淨裝置 ，其中，上述第1基板保持部手段與用以吸引基板背面而 吸附保持之吸引管連接，該吸引管介設有用以補捉流入至 吸引管內之洗淨液的截留槽。 21.如申請專利範圍第1或2項所記載之基板洗淨裝置 ，其中，具備有用以對滴下於上述第1基板保持手段之吸 附保持面之洗淨液吹氣體而吹散該些洗淨液之氣體噴嘴。 -39- 200841378 2 2 . —種基板洗淨方法，屬於洗淨基板背面之基板洗 淨方法，其特徵爲：包含 水平吸附保持朝向下方之基板背面之第1區域的第1基 板保持工程； 水平吸附保持轉接該基板而不與上述第1區域重疊之 基板背面之第2區域的第2基板保持工程； 對以上述第1基板保持工程或第2基板保持工程所保持 之基板背面供給洗淨液之工程； 於將基板從上述第1基板保持工程轉接至上述第2基板 保持工程之前，乾燥上述第2區域之工程；和 上述第1基板保持工程之期間中，執行包含上述第2區 域之基板背面之洗淨，上述第2基板保持工程之期間中， 執行上述第2區域以外之基板背面之洗淨的工程。 23. 如申請專利範圍第22項所記載之基板洗淨方法， 其中，又含有於結束上述基板背面之洗淨後，使基板旋轉 ，甩乾殘留於基板背面之洗淨液之工程。 24. 如申請專利範圍第22或23項所記載之基板洗淨裝 置，其中，乾燥上述第2區域之工程是藉由對基板背面噴 射氣體而執行。 2 5.如申請專利範圍第22或23項所記載之基板洗淨裝 置，其中，又包含對洗淨後之基板背面照射紫外光，使殘 留於基板背面之粒子收縮之工程。 26.—種記憶媒體，屬於儲存有洗淨基板背面之基板 洗淨裝置所使用之程式的記憶媒體，其特徵爲：上述程式 -40- 200841378 爲了實行申請專利範圍第22或23項所記載之基板洗淨方 法組成步驟。200841378 X. Patent Application No. 1. A substrate cleaning device which is a substrate cleaning device for cleaning a back surface of a substrate, comprising: a first substrate holding means for horizontally adsorbing and holding a first region of a substrate back surface facing downward; The substrate holding means receives the substrate by the first substrate holding means, horizontally adsorbs and holds the second region of the back surface of the substrate which is not overlapped with the first region, and the cleaning liquid supply means holds and holds the first substrate holding means Or supplying a cleaning liquid to the back surface of the substrate of the second substrate holding means; and drying means for drying the second region before the substrate is transferred from the first substrate holding means to the second substrate holding means; While being held by the first substrate holding means, the substrate is cleaned by contact with the back surface of the substrate including the second region, and the substrate is held by the second substrate holding means, and the substrate other than the second region is held. Wash the back of the contact. The substrate cleaning apparatus according to the first aspect of the invention, wherein the second substrate holding means is configured to hold the center of the holding substrate and is rotatable in a vertical direction, and is configured to be cleaned by the cleaning member. The substrate is rotated to dry the cleaning liquid remaining on the back surface of the substrate. 3. The substrate cleaning apparatus according to the first or second aspect of the invention, wherein the drying means is a means for spraying a gas onto the back surface of the substrate. 4. According to claim 1 or 2 In the above-described substrate cleaning apparatus-36-200841378, there is provided a moving means for moving the first substrate holding means to the second substrate holding means in a relative lateral direction, and the moving means is used to clean the first The 2 region is located above the second substrate holding means. The substrate cleaning device according to the fourth aspect of the invention, wherein the first substrate holding means includes two adsorption stages having a rectangular shape of the adsorption holding surface, wherein the adsorption stages are long sides of the adsorption holding surface The direction is parallel to the direction in which the first substrate holding means moves, and the two regions facing the edge portion of the substrate are held. 6. The substrate cleaning apparatus according to claim 4, wherein the first substrate holding means includes two adsorption stages having an arc-shaped adsorption holding surface, and the adsorption stages are configured to be adsorbed and held. The substrate is concentrically arranged to maintain two opposing regions of the edge portion of the substrate. 7. The substrate cleaning apparatus according to claim 4, further comprising: a substrate that surrounds and holds the first substrate holding means or the second substrate holding means, and the moving means and the first substrate holding means Move the cup cover at the same time. 8. The substrate cleaning apparatus according to claim 7, wherein the inner wall surface of the cup cover is made of a material which is difficult to bounce back to the cleaning liquid on the inner wall surface. 9. The substrate cleaning apparatus according to claim 8, wherein it is difficult to bounce back the material of the cleaning liquid to be a hydrophilic porous resin. 10. The substrate cleaning apparatus according to claim 8, wherein the material which is hard to bounce back the cleaning liquid is a ceramic whose surface is roughened. The substrate cleaning device according to the fourth aspect of the invention, wherein the method of the present invention includes the enclosing member surrounding the second substrate holding means, wherein the drying means is formed to surround the circumferential direction. a gas injection port at the upper end of the member. The substrate cleaning device according to the first aspect of the invention, wherein the surrounding member and the space surrounded by the back surface of the substrate held by the first substrate holding means or the second substrate holding means are adsorbed and held. It is a decompression environment. The substrate cleaning device according to claim 11, wherein the substrate cleaning device is adapted to change a flow direction of the cleaning liquid flowing from the cleaning liquid supply means toward the upper end of the surrounding member through the back surface of the substrate. The fluid discharge means for discharging the fluid is formed so as to interrupt the trajectory between the cleaning liquid supply means and the upper end of the surrounding member. The substrate cleaning device according to the first aspect of the invention, wherein the fluid discharged from the fluid discharge means is a cleaning liquid. The substrate cleaning apparatus according to the first or second aspect of the invention, further comprising: a lifting means for causing the second substrate holding means to relatively lift and lower the first substrate holding means, and covering the The covering member on the upper surface of the second substrate holding means retracts the second substrate holding means below the second region of the substrate held by the first substrate holding means, and positions the covering member at the second position The second region is washed by the cleaning member in a state above the substrate holding means. The substrate cleaning device according to the first or second aspect of the invention, wherein the substrate is further coated with ultraviolet light on the back surface of the -38-200841378 after being washed by the cleaning member to cause residual An ultraviolet lamp that shrinks particles on the back side of the substrate. 17. The substrate cleaning apparatus according to claim 1 or 2, further comprising: measuring means for measuring a force of contact between the cleaning member and the back surface of the substrate; and relating the cleaning member to the substrate And a lifting and lowering means; and a control means for controlling the force of the cleaning member to contact the back surface of the substrate in accordance with the measurement result by the measuring means, and controlling the force in the first predetermined range. The substrate cleaning device according to the first or second aspect of the invention, wherein the peripheral portion of the back surface of the substrate is hydrophobized, and the cleaning member does not face the back surface of the substrate when the peripheral portion is cleaned. The cleaning liquid supplied from the cleaning liquid supply means is contacted and stirred, and the back surface of the substrate in the peripheral region is washed by the water potential of the stirred cleaning liquid. The substrate cleaning device according to the first or second aspect of the invention, wherein the peripheral region of the back surface of the substrate is hydrophobized, and the second ultraviolet lamp that emits ultraviolet light is provided to hydrophilize the peripheral region. The substrate cleaning device according to the first or second aspect of the invention, wherein the first substrate holding portion means is connected to a suction tube for sucking and holding the back surface of the substrate, and the suction tube is interposed. To capture the trapping tank of the washing liquid flowing into the suction pipe. The substrate cleaning apparatus according to the first aspect of the invention, wherein the substrate cleaning apparatus is configured to blow the cleaning liquid to the adsorption holding surface of the first substrate holding means to blow off the cleaning. Liquid gas nozzle. -39-200841378 2 2 - A method for cleaning a substrate, which is a substrate cleaning method for cleaning a back surface of a substrate, comprising: a first substrate holding process for horizontally adsorbing a first region of the back surface of the substrate facing downward; The second substrate holding process of the second region on the back surface of the substrate which is not transferred to the first region is adsorbed and held; and the back surface of the substrate held by the first substrate holding process or the second substrate holding process is cleaned. Liquid engineering; drying the substrate in the second region before the substrate is transferred from the first substrate holding process to the second substrate holding process; and performing the second region during the first substrate holding process In the cleaning of the back surface of the substrate, during the second substrate holding process, the cleaning of the back surface of the substrate other than the second region is performed. The substrate cleaning method according to claim 22, further comprising the step of rotating the substrate after the completion of the cleaning of the back surface of the substrate, and drying the cleaning liquid remaining on the back surface of the substrate. The substrate cleaning apparatus according to claim 22, wherein the drying of the second region is performed by spraying a gas on a back surface of the substrate. The substrate cleaning apparatus according to the 22nd or 23rd aspect of the invention, further comprising the step of irradiating the back surface of the cleaned substrate with ultraviolet light to shrink the particles remaining on the back surface of the substrate. 26. A memory medium belonging to a memory medium storing a program for use in a substrate cleaning apparatus for cleaning a back surface of a substrate, characterized in that the program-40-200841378 is described in claim 22 or 23 The substrate cleaning method is composed of steps. -41 --41 -
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