200839349 九、發明說明： 【發明所屬之技術領域】 本發明係有關一種修補結構以及方法，尤其是指一種 利用具有複數層之結構，以修補具有缺陷之電路以及利用 具有複數層結構之修補基材接受電磁波光源照射後產生的 碰撞壓力，使材料轉移至欲修補之區域中之一種缺陷修補 結構及缺陷修補方法。 【先前技術】 平面顯示器（Flat Panel Display，FPD)已是國内最重要 的產業之一，隨著大尺寸液晶顯示器面板的發展量產到七 代廠，面板尺寸的大型化及產能需求不斷提高的趨勢及市 場需求下，使得現有的修補製程面臨極大的瓶頸。如圖一 所示，平面顯示器的前段製程主要為利用光阻蝕刻技術進 行線路圖案成型，而在此製程中因污染及本身的蝕刻誤 差，導致製程完成後於線路圖案中產生開路缺陷（open defect)10以及線缺陷（linedefect)ll，這些缺陷是不被允許 的，因此必須加以修補（repair)。 傳統進行修補的主要方式為雷射化學氣相沉積（Laser Chemical Vapor Deposition，Laser CVD)，而此修補製程主 要是將檢測後的面板離線送至需特殊氣氛環境的Laser CVD設備中，再利用雷射光與特殊氣體的光化學反應，使 修補的線路材料沉積於具有缺陷的線路上而完成修補製 程。因為需要離線進行修補處理及製程需要於特殊氣氛環 6 200839349 境下進行，導致使用Laser CVD進行修補製程的產能較低。 另外，習用技術中如日本公開專利JP. N0. 2000031013 號所揭露的一種線路圖案修補裝置與方法，其係利用雷射 將修補材料轉移至具有缺陷的線路圖案上，以回復線路圖 案之電性。在該技術中，修補的線路材料受雷射光照射後， 修補材料容易受到雷射光之能罝而產生熱影響區之現象’ 因此會有材料氧化及破壞的問題，造成導電性與黏著性不 佳。 【發明内容】 本發明提供一種缺陷修補結構，其係具有複數層之結 構可以使具有缺陷之線路回復電性。 本發明提供一種缺陷修補方法，其係利用具有複數層 結構之修補基材接受電磁波光源照射後產生的碰撞壓力， 即直接來自光子撞擊所產生的、光壓，輔以電磁波能量產生 打斷分子鍵結或爆炸現象，使材料轉移至欲修補之區域 中，該複數層結構除了具有修補缺陷之材料外，更具有粘 著材料以提高修補缺陷的材料附著於缺陷線路區域上。 本發明提供一種缺陷修補方法，其係利用具有複數層 結構之修補基材接受電磁波光源照射後產生的碰撞壓力， 使材料轉移至欲修補之區域中，該複數層結構除了具有修 補缺陷之材料外，更具有可以吸收電磁能量之中介層使得 修補材料不會直接受到雷射熱源的影響以維持導電特性。 本發明提供一種缺陷修補方法，其係利用具有複數層 7 200839349 結構之修補基材接受電磁波光源照射後產生的碰撞壓力， 使材料轉移至欲修補之區域中。該方法係可在承載板與修 補缺陷的材料之間形成一緩衝層，以使得修補材料不會直 接受到電磁波光束在轉移過程中產生之熱源的影響，以維 持轉移材料之導電特性，並可使轉移材料容易脫離緩衝層 而轉移至缺陷線路上。 在一實施例中，本發明提供一種缺陷修補結構，包括： 一導電黏著層；以及一修補材料層，其係形成於該導電黏 著層上。 在一實施例中，本發明提供一種缺陷修補結構，包括: 一修補材料層；以及一中介層，其係形成於該修補材料層 上0 在一實施例中，本發明提供一種缺陷修補結構，包括： 一導電黏著層；一修補材料層，其係形成於該導電黏著層 上；以及一中介層，其係形成於該修補材料層上。在一實 施例中，本發明提供一種缺陷修補方法，其係包括有下列 步驟：提供一具有一缺陷之基板；提供一承載板，該承載 板上形成有一修補材料層；使該修補材料層對應該缺陷； 以及利用一電磁波光源提供之光束照射於該承載板上，使 該修補材料轉移至該缺陷上。 在一實施例中，本發明提供一種缺陷修補方法，其係 包括有下列步驟：提供一具有一缺陷之基板；提供一承載 板，該承載板上形成有一轉移材料層，該轉移材料層上具 有一修補材料層，其係形成於該承載板上以及一導電黏著 層，其係形成於該修補材料層上；使該轉移材料層對應該 200839349 上，使該=用電磁波光源提供之光束照射於該承載板 以及該導層轉移至該缺陷上’其中該修補材料層 涂屯黏者層係同時轉移至該缺陷上。 係包括有-種缺陷修補方法，其 載板，該承載板上形=有移材= 提供一承 罝 柃私材枓層，该轉移材料層上 盆俜其係形成於該承載板上以及—修補材料 該中介層上；使該轉移材料層對應該缺陷； = 光束照射於該承載板上，* 中介層二轉 产勺=實施例中，本發明更提供一種缺陷修補方法，其 =括有下列步驟：提供一具有一缺陷之基板，·提供一承 該承載板上形成有一緩衝層以及-轉移材料層，並 : 層上;使該轉移材料層對應該缺陷，·以及 迅磁波光賴供之光束照射㈣ 移材料層轉移至該缺陷上。 反上使5亥鈐 【實施方式】 為使貝審查委貝能對本發明之特徵、目的及功能 更進一步的認知與瞭解，下文特將本發明之沪 部結構1設計_念原由進行說明，以使得、查委= 以了解本發明之特點，詳細說明陳述如下： 、 請參閱圖二A所示’該圖係為本發明之缺陷修補 弟-貫施例示意圖。缺陷修補結構2a具有—導電黏著口層 200839349 23，而在該導電黏著層23上形成 導電黏著層23之材料特性為具有導電性：材料層22。該 該修補材料層22可以容易附著於該缺陷線：：耆性’使得 電黏著層23在本實施例中係為銀膠。$、,上。該導 為-金屬材料層，該金屬材料可選Λ =㈣層22係 膠或者是錮等類之材料，但不在此限:、、'、銀、銅、銀200839349 IX. Description of the Invention: [Technical Field] The present invention relates to a repair structure and method, and more particularly to a structure having a plurality of layers for repairing a defective circuit and using a repair substrate having a plurality of layers The collision pressure generated by the irradiation of the electromagnetic wave source causes the material to be transferred to a defect repairing structure and a defect repairing method in the area to be repaired. [Prior Art] Flat Panel Display (FPD) is one of the most important industries in China. With the development of large-size LCD panels, it has been mass-produced to seven generations. The trend and market demand make the existing repair process face a huge bottleneck. As shown in Fig. 1, the front-end process of the flat panel display mainly uses the photoresist etching technology to form the line pattern, and in the process, the open defect is generated in the line pattern after the process is completed due to contamination and its own etching error. ) 10 and linedefect ll, these defects are not allowed, so they must be repaired. The main method of repairing is Laser Chemical Vapor Deposition (Laser CVD), and the repair process is mainly to take the tested panel offline to the Laser CVD equipment in a special atmosphere environment, and then use the mine. The photochemical reaction of the illuminating light with the special gas causes the repaired circuit material to be deposited on the defective line to complete the repair process. Because the need for off-line repair processing and process needs to be carried out under the special atmosphere ring 6 200839349, the productivity of the repair process using Laser CVD is low. In addition, a circuit pattern repairing apparatus and method disclosed in Japanese Laid-Open Patent Publication No. JP-A No. 2000031013, which uses a laser to transfer a repairing material to a defective line pattern to restore the electrical property of the line pattern. . In this technology, after the repaired line material is irradiated by the laser light, the repair material is easily exposed to the energy of the laser light and the heat affected zone is generated. Therefore, there is a problem of oxidation and destruction of the material, resulting in poor conductivity and adhesion. . SUMMARY OF THE INVENTION The present invention provides a defect repair structure having a structure of a plurality of layers to restore electrical properties of a defective line. The invention provides a defect repairing method, which is to use a repairing substrate having a plurality of layer structures to receive a collision pressure generated by an electromagnetic wave source, that is, directly from a photon impact, a light pressure, and an electromagnetic wave energy to generate an interrupted molecular bond. The junction or explosion phenomenon causes the material to be transferred to the area to be repaired. In addition to the material having the repair defect, the multi-layer structure has an adhesive material to improve the material of the repair defect and adhere to the defect line region. The present invention provides a defect repairing method, which utilizes a collision pressure generated by a repair substrate having a plurality of layers of structures after being irradiated by an electromagnetic wave source to transfer a material to a region to be repaired, the plurality of layers having a material other than a defect. It also has an interposer that can absorb electromagnetic energy so that the repair material is not directly affected by the laser heat source to maintain the conductive properties. The present invention provides a defect repairing method in which a collision pressure generated by an electromagnetic wave source is irradiated by a repair substrate having a plurality of layers 7 200839349 structure, and the material is transferred to a region to be repaired. The method can form a buffer layer between the carrier plate and the material for repairing defects, so that the repairing material is not directly affected by the heat source generated by the electromagnetic wave beam during the transfer process, so as to maintain the conductive property of the transfer material, and The transfer material is easily removed from the buffer layer and transferred to the defective line. In one embodiment, the present invention provides a defect repair structure comprising: a conductive adhesive layer; and a repair material layer formed on the conductive adhesive layer. In one embodiment, the present invention provides a defect repair structure comprising: a repair material layer; and an interposer formed on the repair material layer. In one embodiment, the present invention provides a defect repair structure. The method includes: a conductive adhesive layer; a repair material layer formed on the conductive adhesive layer; and an interposer formed on the repair material layer. In one embodiment, the present invention provides a defect repairing method comprising the steps of: providing a substrate having a defect; providing a carrier plate on which a repair material layer is formed; It should be defective; and a light beam provided by an electromagnetic wave source is irradiated onto the carrier plate to transfer the repair material to the defect. In one embodiment, the present invention provides a defect repairing method comprising the steps of: providing a substrate having a defect; providing a carrier plate on which a transfer material layer is formed, the transfer material layer having a repair material layer formed on the carrier plate and a conductive adhesive layer formed on the repair material layer; the transfer material layer is corresponding to 200839349, so that the light beam provided by the electromagnetic wave source is irradiated The carrier plate and the guiding layer are transferred to the defect, wherein the layer of the repairing material layer is simultaneously transferred to the defect. The invention comprises a method for repairing a defect, a carrier plate, a shape of the carrier plate, a material for moving the substrate, a layer of a private material, and a layer of the layer of the transfer material formed on the carrier plate and Repairing the material on the interposer; making the transfer material layer correspond to the defect; = beam illuminating the carrier plate, * interposer two conversion spoon = in the embodiment, the present invention further provides a defect repair method, which includes The following steps: providing a substrate having a defect, providing a buffer layer and a layer of a transfer material on the carrier plate, and: layering; making the layer of the transfer material correspond to a defect, and a magnetic wave The beam is irradiated (4) and the layer of material is transferred to the defect. In contrast, in order to enable Becker to review and understand the features, purposes, and functions of the present invention, the following is a description of the design of the Shanghai structure 1 of the present invention. In order to understand the characteristics of the present invention, the detailed description is as follows: Please refer to FIG. 2A for a schematic diagram of the defect repairing of the present invention. The defect repairing structure 2a has a conductive adhesive layer 20083934923, and the material of the conductive adhesive layer 23 formed on the conductive adhesive layer 23 is electrically conductive: a material layer 22. The repair material layer 22 can be easily attached to the defect line: 耆 so that the electro-adhesive layer 23 is silver paste in this embodiment. $,, on. The guide is a metal material layer, and the metal material may be selected from the group consisting of (=(four) layer 22 glue or bismuth or the like, but not limited thereto: ,, ', silver, copper, silver
請參閱圖二Β所示，該圖係為本發 第二實施例示意圖。該缺陷修補結構2 b具有構 22’而在該修補材料層22上形成有 ^ ?層 層24之材料特性為具有能量吸收之功能該中介 :22在受電磁波光源之照射而轉移到缺陷線路 = 射而產生熱影響區。該電磁波光源係可選擇= 波·^又每射光源以及紫外光波雷射其中之—。 ::22可以維持其導電特性’以及避免因受熱：。該 22^t^4八之材料係為欽’但不以此為限。該修補材料層 係為一金屬材料層，該金屬材料可選擇鎢、金、銀、 銀膠或者是鉬材料，但不在此限。 Μ 1參閱圖二C所示，該圖係為本發明之缺陷修補結構 弟^實施例示意圖。該缺陷修補結構2c係為結合前述之第 —貫施例以及第二實施例，亦即在該修補材料層22下方具 有一導電黏著層23。另外在該修補材料層22之上具有一 中介層24。該修補材料層22、導電黏著層23以及該中介 層24之材料選擇以及功效如前所述，在此不作贅述。 請參閱圖三A至圖三C所示，該圖係為本發明之缺陷 修補方法第一實施例示意圖。本實施例之修補方法，係為 10 200839349 形成修補結構以修補缺陷線路之方法。首先如圖三A所 示，提供一具有缺陷線路21之基板20。該缺陷線路21係 可為線缺陷或者是開路缺陷，在本實施例係以開路缺陷作 說明。該基板20可是玻璃基板或者是矽基板，該線路圖案 在本實施例中係為應用於平面顯示器之線路圖案，但不在 此限。 接著如圖三B所示，提供一承載板4，該承載板4上形 成有一修補材料層2 2，其係在轉移前與缺陷線路21保持 一適當間隙。該修補材料層22之材料係為金屬材料，例 如：鎮、金、銀、銅、銀膠或者是鉬材料，但不在此限。 該承載板4之一側具有一電磁波光源3。該電磁波光源3 係可選擇為一全波段雷射光源或者是紫外光波雷射。然 後，使該修補材料層22對應該缺陷線路21之位置。最後， 如圖二C所不’再利用該電磁波光源3提供之電磁波光束 90照射於該承載板4上，使該修補材料22轉移至該缺陷 線路21上。由於該修補材料22接受電磁波光源照射後產 生的碰撞壓力，亦即，直接來自光子撞擊所產生的光壓， 輔以雷射能量產生打斷分子鍵結或爆炸現象，使修補材料 22轉移至欲修補之缺陷線路21上。 請參閱圖三D至圖三E所示，該圖係為本發明之缺陷 修補方法第二實施例示意圖。如圖三D所示，在本實施例 中，該修補材料層22與該承載板4之間更形成有一缓衝層 25。然後使該修補材料層22對應缺陷線路21。如圖三E 所示，再利用該電磁波光源3提供之電磁波光束90照射於 該承載板4上，使該修補材料層22轉移至該缺陷線路21 200839349 上。在轉移過程中，緩衝層25不轉移至缺陷線路21上， 該緩衝層25之目的在於吸收電磁波光源之能量並傳導部 分之電磁波能量給該修補材料層2 2。如此一來，一方面可 以避免該修補材料層22因受熱而氧化，進而影響導電之特 性；另一方面也可以藉由該緩衝層25與修補材料層22之 間的低黏著性，以使得修補材料層22容易從緩衝層25轉 移至該缺陷線路21上。該緩衝層25係可選擇為高分子材 料，在本實施例中，該高分子材料係選擇為聚二甲基矽氧 炫（Polydimethylsiloxane，PDMS)，但不在此限。 請參閱圖四A至圖四C所示，該圖係為本發明之缺陷 修補方法第三實施例示意圖。在本實施例中，係製作如圖 二A所述之缺陷修補結構2a ^首先如圖四A所示，提供一 具有缺陷線路21之基板20。然後如圖四B所示，提供一 承載板4，該承載板4上形成有一轉移材料層2 6，，其係 在轉移前與缺陷線路21保持一適當間隙，該轉移材料層 26具有一修補材料層22以及一導電黏著層23。該修補材 料層22係形成於該承載板4上，而該導電黏著層23則形 成於該修補材料層2 2上。至於形成該轉移材料層2 6之方 法，係可利用習用之技術來製作，這是熟悉此項技術之人 所熟悉的，在此不作贅述。 該修補材料層22之材料係為金屬材料，例如：鑛、金、 銀、銅、銀膠或者是鉬材料，但不在此限。該承載板4之 • ^側具有一電磁波光源3◦該電磁波光源3係可選擇為一 全波段雷射光源或者是紫外光波雷射。然後，使該轉移材 料層26對應該缺陷線路21之位置。最後，如圖四C所示， 200839349 4電磁波光源3提供之電磁波光束9〇照射於該承載 ，使該轉移材料層26(包括22以及23)同時轉移至 该缺陷線路21上。該導雷羝基思9Q u 作才夕至 呈 ，电站者層23之材料係可選擇同時 膠，但不在此限。在本A例中係使用銀 :參，…圖四£所示’該圖係為本發明之缺陷 ^ ^四貫_示意圖。如圖㈣所示，在本實 t 22 4 '_ w後使忒轉移材料層26對應缺陷線路21。如圖四 於所^酱再利用該電磁波光源3提供之電磁波光束9 0照射 =承載板4上，使該轉移材料層26(包括22以及23)同 至該缺陷線路21上。該緩衝層25之目的以 廷擇如丽所述，在此不作贅述。 請參閱圖五A至圖五c所示，該圖係為本發明之缺陷 二補方法弟五貫施例示意圖。在本實施财，料形成如 圖-B之缺陷修補結構2b之方法。首先如圖五a所示，提 供-具有缺㈣路21之基板2()。錢如圖五B所示，提 供-承載板4 ’該承載板4上形成有—轉移材料層27，其 ，在轉移前與缺陷線路21保持一適當間隙，該轉移材料層 27具有-修補材料層22以及—中介層％。該中介層…系 形成於該承載板4上’而該修補材料層22則形成於該中介 層24上。至於形成該轉移材料層27之方法，係可利用習 用之技術來製作’這是熟悉此項技術之人所熟悉的，在此 不作贅述。 該承載板4之一側具有一電磁波光源3。該電磁波光源 200839349 3係可選擇為一全波段雷射光源或者是紫外光波雷射。然 後’使該轉移材料層27對應該缺陷線路21之位置。最後， 如圖五C所示，再利用該電磁波光源3提供之電磁波光束 9〇妝射於戎承載板4上，使該轉移材料層27(包括22以及 14)同時轉移至該缺陷線路21上。該中介層24係為可吸收 電=波能量之材料，以保護該修補材料層22免於直接受到 遠電磁波光源之影響而產生熱影響區，以避免該修補材料 層因文熱而氧化，進而影響導電之特性。該修補材料層22 ，材料係為金屬材料，例如：鎢、金、銀、銅、銀膠或者 疋麵材料’但不在此限。該中介層24之材料係為鈦，但不 以此為限。 欠、請參閱^圖五D至圖五E所示，該圖係為本發明之缺陷 修補方法第六實施例示意圖。如圖五D所示，在本實施例 中’該中介層24與該承載板4之間更形成有—層缓衝層 25:然後使該轉移材料層27對應缺陷線路21。如圖五e /示再利用為，磁波光源3提供之電磁波光束9〇照射於 該承載板4上，使該轉移材料層27(包括以以及24)同時 車W夕至4缺線路21上。該緩衝層25之目的以及材料選 擇如前所述，在此不作贅述。 、請參閱圖五F至圖五G所示，該圖係為本發明之缺陷 ^補方法第七實施例示意圖。在本實施例中，係為製作如 圖二C之缺陷修補結構2c之方法。首先如圖五F所示，提 承載板4 ’該承載板4上形成有一轉移材料層狀，該 -移材料層28具有一修補材料層22、一導電黏著層23以 及t "層24。5亥中介層24係形成於該承載板4上，而 200839349 該修補材料層22則形成於該中介層24上，該導電黏著層 23則形成於該修補材料層22上。至於形成該轉移材料層 28之方法，係可利用習用之技術來製作，這是熟悉此項技 術之人所熟悉的，在此不作贅述。Please refer to FIG. 2A, which is a schematic diagram of a second embodiment of the present invention. The defect repairing structure 2b has a structure 22' and the material property of the layer 24 formed on the repairing material layer 22 is a function of energy absorption. The medium: 22 is transferred to a defective line by irradiation with an electromagnetic wave source. Shooting produces a heat affected zone. The electromagnetic wave source is selectable = wave · ^ and each of the source and the ultraviolet beam of the laser -. ::22 maintains its conductive properties' and avoids heating due to: The material of the 22^t^48 is Qin's but not limited to this. The repairing material layer is a metal material layer which may be selected from tungsten, gold, silver, silver paste or molybdenum material, but is not limited thereto. Μ 1 Referring to FIG. 2C, the figure is a schematic diagram of an embodiment of the defect repair structure of the present invention. The defect repairing structure 2c is combined with the above-described first embodiment and the second embodiment, that is, a conductive adhesive layer 23 is provided under the repairing material layer 22. Additionally, an intervening layer 24 is provided over the layer of repair material 22. The material selection and efficacy of the repair material layer 22, the conductive adhesive layer 23, and the interposer 24 are as described above, and are not described herein. Referring to FIG. 3A to FIG. 3C, the figure is a schematic diagram of the first embodiment of the defect repairing method of the present invention. The repairing method of this embodiment is a method for forming a repair structure to repair a defective line in 10 200839349. First, as shown in Fig. 3A, a substrate 20 having a defective line 21 is provided. The defective line 21 may be a line defect or an open line defect, and is described by an open defect in this embodiment. The substrate 20 may be a glass substrate or a germanium substrate, which is a line pattern applied to a flat display in this embodiment, but is not limited thereto. Next, as shown in Fig. 3B, a carrier plate 4 is formed which is formed with a layer of repairing material 2 2 which maintains a suitable gap with the defective line 21 prior to transfer. The material of the repair material layer 22 is a metal material such as town, gold, silver, copper, silver paste or molybdenum material, but is not limited thereto. One side of the carrier plate 4 has an electromagnetic wave source 3. The electromagnetic wave source 3 can be selected as a full-band laser source or an ultraviolet laser. The repair material layer 22 is then brought to the position of the defective line 21. Finally, the electromagnetic wave beam 90 supplied from the electromagnetic wave source 3 is irradiated onto the carrier plate 4 as shown in Fig. 2C, and the repairing material 22 is transferred onto the defective line 21. Because the repairing material 22 receives the collision pressure generated by the electromagnetic wave source, that is, directly from the light pressure generated by the photon impact, supplemented by the laser energy to break the molecular bond or the explosion phenomenon, so that the repair material 22 is transferred to the desired Repair the defect line 21. Please refer to FIG. 3D to FIG. 3E, which is a schematic diagram of a second embodiment of the defect repairing method of the present invention. As shown in FIG. 3D, in the present embodiment, a buffer layer 25 is further formed between the repairing material layer 22 and the carrier sheet 4. The repair material layer 22 is then made to correspond to the defect line 21. As shown in Fig. 3E, the electromagnetic wave beam 90 supplied from the electromagnetic wave source 3 is irradiated onto the carrier plate 4, and the repairing material layer 22 is transferred to the defect line 21 200839349. During the transfer process, the buffer layer 25 is not transferred to the defect line 21, and the purpose of the buffer layer 25 is to absorb the energy of the electromagnetic wave source and to conduct part of the electromagnetic wave energy to the repair material layer 22. In this way, on the one hand, the repairing material layer 22 can be prevented from being oxidized by heat, thereby affecting the characteristics of the conductive property; on the other hand, the low adhesion between the buffer layer 25 and the repairing material layer 22 can also be used to repair The material layer 22 is easily transferred from the buffer layer 25 to the defect line 21. The buffer layer 25 may be selected from a polymer material. In the present embodiment, the polymer material is selected from the group consisting of polydimethylsiloxane (PDMS), but not limited thereto. Referring to FIG. 4A to FIG. 4C, the figure is a schematic diagram of a third embodiment of the defect repairing method of the present invention. In the present embodiment, the defect repair structure 2a as shown in Fig. 2A is fabricated. First, as shown in Fig. 4A, a substrate 20 having a defective line 21 is provided. Then, as shown in FIG. 4B, a carrier plate 4 is formed. The carrier plate 4 is formed with a layer of transfer material 26, which is maintained at a proper gap with the defect line 21 before transfer, and the layer of transfer material 26 has a repair. A material layer 22 and a conductive adhesive layer 23. The repair material layer 22 is formed on the carrier sheet 4, and the conductive adhesive layer 23 is formed on the repair material layer 22. The method of forming the transfer material layer 26 can be made using conventional techniques, which are familiar to those skilled in the art and will not be described herein. The material of the repairing material layer 22 is a metal material such as mineral, gold, silver, copper, silver glue or molybdenum material, but is not limited thereto. The ^ side of the carrier board 4 has an electromagnetic wave source 3, which can be selected as a full-band laser source or an ultraviolet laser. The transfer material layer 26 is then brought to the position of the defective line 21. Finally, as shown in Fig. 4C, the electromagnetic wave beam 9 provided by the electromagnetic wave source 3 of 200839349 is irradiated onto the carrier, so that the transfer material layer 26 (including 22 and 23) is simultaneously transferred to the defect line 21. The guide Thunder Keith 9Q u is only available, and the material of the power station layer 23 can be selected at the same time, but not limited to this. In the case of this example, silver is used: reference, as shown in Fig. 4, which is a defect of the present invention. As shown in Fig. 4, the tantalum transfer material layer 26 is made to correspond to the defective line 21 after the actual t 22 4 '_ w. As shown in Fig. 4, the electromagnetic wave beam 90 supplied from the electromagnetic wave source 3 is irradiated onto the carrier plate 4, and the transfer material layer 26 (including 22 and 23) is bonded to the defect line 21. The purpose of the buffer layer 25 is described in the following, and will not be described herein. Please refer to FIG. 5A to FIG. 5c, which is a schematic diagram of a five-factor embodiment of the second method of the invention. In the present implementation, a method of forming the defect repair structure 2b as shown in Fig. B is formed. First, as shown in Fig. 5a, a substrate 2() having a missing (four) way 21 is provided. As shown in FIG. 5B, the carrier-supporting plate 4' is formed with a layer of transfer material 27 which maintains a proper gap with the defect line 21 before transfer, and the transfer material layer 27 has a repair material. Layer 22 and - Interposer%. The interposer is formed on the carrier plate 4 and the repair material layer 22 is formed on the interposer 24. The method of forming the transfer material layer 27 can be made using conventional techniques. This is familiar to those skilled in the art and will not be described herein. One side of the carrier plate 4 has an electromagnetic wave source 3. The electromagnetic wave source 200839349 3 can be selected as a full-band laser source or an ultraviolet laser. Then, the transfer material layer 27 is made to correspond to the position of the defective line 21. Finally, as shown in FIG. 5C, the electromagnetic wave beam 9 provided by the electromagnetic wave source 3 is again applied to the crucible carrier plate 4, and the transfer material layer 27 (including 22 and 14) is simultaneously transferred to the defect line 21. . The interposer 24 is a material that can absorb electric energy and wave energy to protect the repairing material layer 22 from being directly affected by the far electromagnetic wave source to generate a heat-affected zone, so as to prevent the repairing material layer from being oxidized by the heat of the heat. Affects the characteristics of electrical conduction. The repairing material layer 22 is made of a metal material such as tungsten, gold, silver, copper, silver paste or kneading material, but is not limited thereto. The material of the interposer 24 is titanium, but is not limited thereto. Owing, please refer to FIG. 5D to FIG. 5E, which is a schematic diagram of a sixth embodiment of the defect repairing method of the present invention. As shown in Fig. 5D, in the present embodiment, a buffer layer 25 is formed between the interposer 24 and the carrier plate 4: the transfer material layer 27 is then made to correspond to the defect line 21. As shown in Fig. 5e/e, the electromagnetic wave beam 9 provided by the magnetic wave source 3 is irradiated onto the carrier plate 4, so that the transfer material layer 27 (including and 24) is simultaneously on the vehicle line 4. The purpose and material selection of the buffer layer 25 are as described above and will not be described herein. Please refer to FIG. 5F to FIG. 5G, which is a schematic diagram of a seventh embodiment of the defect of the present invention. In the present embodiment, it is a method of fabricating the defect repairing structure 2c as shown in Fig. 2C. First, as shown in FIG. 5F, the carrier plate 4' is formed with a layer of a transfer material, and the layer 28 has a repair material layer 22, a conductive adhesive layer 23, and a t" layer 24. The 5th interposer 24 is formed on the carrier plate 4, and the repair material layer 22 is formed on the interposer 24, and the conductive adhesive layer 23 is formed on the repairing material layer 22. The method of forming the layer 28 of the transfer material can be made using conventional techniques, which are familiar to those skilled in the art and will not be described herein.
該承載板4之一側具有一電磁波光源3◦該電磁波光源 3係可選擇為一全波段雷射光源或者是紫外光波雷射。然 後’使邊轉移材料層28對應該缺陷線路21之位置。最後， 如圖五G所示，再利用該電磁波光源3提供之電磁波光束 9〇照射於該承載板4上，使該轉移材料層28(包括22、23 ^及24)同％轉移至该缺陷線路21上。該修補材料層22、 導電黏奢層23以及中介| 24之功效以及目的如前；述， 在此不作贅述。 明苓閱圖五Η至圖五I係為本發明之缺陷修補方法第 八實施例示意圖。如圖五Η所示，在本實施例令，該中介 層24與該承載板4之間更形成有—層緩衝層&。然後使 忒轉移材料層28對應缺陷線路21。如圖五ϊ所示，再利 肋電磁波光源3提供之電磁波光束9G照射於該承載板4 上，使該轉移材料層28(包括22、23以及24) 該缺陷線路21上。該緩衝声25夕曰才矛 所述，在此不作贅述之目的以及材料選擇如前 中之芝=示，本實施例係將本發明之第八伽 以對二 弟1㈣結合’但實際上應料，該光罩結構Η與本 200839349 發明所提供之其他實施例相互結合應用。 惟以上所述者，僅為本發明之較佳實施例，當不能以 - 之限制本發明範圍。即大凡依本發明申請專利範圍所做之 . 均等變化及修飾，仍將不失本發明之要義所在，亦不脫離 本發明之精神和範圍，故都應視為本發明的進一步實施狀 況。 綜合上述，本發明提供之缺陷修補結構及缺陷修補方 法，其係利用多層之修補結構，以有效解決修補材料易氧 ( 化及應力破壞的問題以維持修補材料導電特性，另外也可 以增加修補材料與缺陷線路之附著性，因此可以滿足業界 之需求，進而提高該產業之競爭力以及帶動週遭產業之發 展，誠已符合發明專利法所規定申請發明所需具備之要 件，故爰依法呈提發明專利之申請，謹請貴審查委員允 撥時間惠予審視，並賜准專利為禱。 16 200839349 【圖式簡單說明】 圖一係為線路圖案之缺陷示意圖。 圖二A係為本發明之缺陷修補結構第—實施例示意圖。 圖- B係為本發明之缺陷修補結構第二實施例示意圖。 圖二C係為本發明之缺陷修補結構第三實施例示意圖。 =A至圖三C係為本發明之缺陷修補方法第—實施例示 意圖。 、 ^二D至圖三E係為本發明之缺陷修補方法第二實施例示 思圖。 ，四A至圖四c係為本發明之缺陷修補方法第三實施例示 意圖。 圖四D至圖四£係為本發明之缺陷修補方法第施例示 意圖。 、 圖五A至圖五C係為本發明之缺陷修財 例示 意圖。 、 圖五D至圖五E料本發明之缺陷修财法第六施例示 意圖。 、 圖五F至圖五G係為本發明之缺陷修補方法第七實施例示 意圖。 圖五Η至圖五丨係為本發明之缺陷修財法第 例示 意圖。 、 圖六係為本發明之第八實施例與光罩結構結合示音圖。 【主要元件符號說明】 200839349 1 -線路圖案 10、11-缺陷 2a、2b、2c-缺陷修補結構 2 0 -基板 21 -缺陷線路 22- 修補材料層 23- 導電黏著層 24- 中介層 25- 緩衝層 26、27、28-轉移材料層 3 -電磁波光源 4 -承載板 5-光罩結構 90-電磁波光束One side of the carrier plate 4 has an electromagnetic wave source 3, and the electromagnetic wave source 3 can be selected as a full-band laser light source or an ultraviolet light laser. The edge transfer material layer 28 is then brought to the position of the defective line 21. Finally, as shown in FIG. 5G, the electromagnetic wave beam 9 provided by the electromagnetic wave source 3 is irradiated onto the carrier plate 4, and the transfer material layer 28 (including 22, 23^ and 24) is transferred to the defect. On line 21. The functions and purposes of the repairing material layer 22, the conductive adhesive layer 23, and the intermediary| 24 are as described above, and are not described herein. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 5 is a schematic view showing the eighth embodiment of the defect repairing method of the present invention. As shown in FIG. 5, in the embodiment, a buffer layer is formed between the interposer 24 and the carrier board 4. The tantalum transfer material layer 28 is then made to correspond to the defect line 21. As shown in Fig. 5, the electromagnetic wave beam 9G supplied from the rib electromagnetic wave source 3 is irradiated onto the carrier plate 4 such that the transfer material layer 28 (including 22, 23 and 24) is on the defective line 21. The buffering sound is described in the following, and the object is not described herein, and the material selection is as shown in the preceding paragraph. This embodiment is to combine the eighth gamma of the present invention with the second brother 1 (four). The reticle structure is used in conjunction with other embodiments provided by the 200839349 invention. However, the above is only a preferred embodiment of the present invention, and the scope of the present invention cannot be limited by -. It is to be understood that the scope of the present invention is not limited to the spirit and scope of the present invention, and should be considered as a further embodiment of the present invention. In summary, the defect repairing structure and the defect repairing method provided by the present invention utilize a multi-layer repairing structure to effectively solve the problem of oxygenation and stress destruction of the repairing material to maintain the conductive property of the repairing material, and also to increase the repairing material. Adhering to the defect line, it can meet the needs of the industry, thereby improving the competitiveness of the industry and driving the development of the surrounding industry. Cheng has already met the requirements for applying for inventions as stipulated by the invention patent law. For the application of the patent, please ask the reviewing committee to allow the time to review and grant the patent as a prayer. 16 200839349 [Simple diagram of the diagram] Figure 1 is a schematic diagram of the defect of the line pattern. Figure 2A is a defect of the invention. FIG. 2 is a schematic view showing a second embodiment of the defect repairing structure of the present invention. FIG. 2C is a schematic view showing a third embodiment of the defect repairing structure of the present invention. A schematic diagram of the first embodiment of the defect repairing method of the present invention, ^2D to FIG.3E is a defect repairing method of the present invention The second embodiment is a schematic diagram of the third embodiment of the defect repairing method of the present invention. FIG. 4D to FIG. 4 are schematic diagrams of the first embodiment of the defect repairing method of the present invention. A to FIG. 5C are schematic diagrams of the defect repairing examples of the present invention. FIG. 5D to FIG. 5E are schematic diagrams of the sixth embodiment of the defect repairing method of the present invention. FIG. 5F to FIG. FIG. 5A to FIG. 5 are schematic diagrams showing a first example of the defect repairing method of the present invention. FIG. 6 is a diagram showing the combination of the eighth embodiment of the present invention and the reticle structure. [Main component symbol description] 200839349 1 - Circuit pattern 10, 11 - Defect 2a, 2b, 2c - Defect repair structure 2 0 - Substrate 21 - Defective line 22 - Repair material layer 23 - Conductive adhesive layer 24 - Interposer 25 - Buffer layer 26, 27, 28 - transfer material layer 3 - electromagnetic wave source 4 - carrier plate 5 - reticle structure 90 - electromagnetic wave beam