TW200835123A - An adjustable low dropout voltage regulator - Google Patents
An adjustable low dropout voltage regulator Download PDFInfo
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- TW200835123A TW200835123A TW96105884A TW96105884A TW200835123A TW 200835123 A TW200835123 A TW 200835123A TW 96105884 A TW96105884 A TW 96105884A TW 96105884 A TW96105884 A TW 96105884A TW 200835123 A TW200835123 A TW 200835123A
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200835123 九、發明說明: 【發明所屬之技術領域】 本發明係關於-種可調節輸出的穩壓器,尤指_種提供擁有兩組操作 模式電路元件(dual operational modes circuit)穩定操作電壓的低壓降穩壓 杰,其透過控制訊號的改變可以調節輸出端的電壓以供應多重操作模式電 路元件所需的操作電壓,且其高輸出電壓可以被設計為2·4ν〜3〇ν之間; 低輸出電壓設定為L0V〜2.3V之間。 【先前技術】 隨著製程技術日益進步,單一晶片設計越趨流行,電路元件之功能也 被設計的越來越強大與複雜,此時電路元件可能擁有多重操作模式分別工 作在不同的操作電壓,同時為了達到低功率消耗的目的,許多可攜式產品 都冒使用功率管理單元(p〇wer Management Unit)控制調配各個多重操作模 式私路元件的工作時間以減少系統的總功率耗損。第1A圖顯示習知可攜 式產品中利用功率管理單元11來控制多重操作模式電路元件19、類比電 路το件20、數位電路元件21以及嵌入式記憶體22的示意圖,其中類比電 路凡件20所需的操作電壓通常比數位電路元件21所需的操作電壓還要 低,因此需要分別使用兩個低壓降穩壓器(LDO)15、16去產生他們所需要 的操作電壓’而嵌入式記憶體22本身也需要一個低壓降穩壓器17來提供 閒置狀態所需要的操作電壓。由於多錢作模式電路元件本身擁有較多的 操作板式’因此也需要數個低壓降穩壓器B、I4來產生所需要的操作電 壓。Ik著多重操作模式電路元件的複雜度增加亦或系統内所包含的電路元 10 200835123 件數量擴大,功率管理罩分沾〇丄、 早兀的a又汁複雜度也會跟著 更多的健降穩厂堅器去產生所需要的操作電壓,因此低 = 1 面積以及所耗損的辨都會直接影_系統本身,如果低壓降穩壓器= 的面積以及所耗彳_辨都科,在系勒所能使 降穩㈣數量就會受到限制,同時影響到多重操作模式電路树的設t ==,系統與電路元件輯會越趨複雜,為了要 穩 厂綱·树合術咏軸雜嶋作,勢必 要研發出新的低壓降穩遷器。 有鑑於此,發明人本於積極發明之精神,純一種「可 歸穩m叹枝率械合功轉理單城行難《的動作 门日请佔有的面積从耗損的功轉跟傳統的單—健降歷器差 大’幾經研究實驗終至完成此項減世人之發明。 【發明内容】 本發明之主要目的係在提供—種可調節輸出的低壓降穩壓器 過控制訊狀變_„值,且其所録面_及_的辦麵傳= 低祕懸H差距从,故利騎發明之設計可以取代數 的早一輸出低壓降顏n進蚊械率的配合辨㈣單元進行電㈣ 整之動作。第m圖跟第1Α圖類似,顯式可攜式產品中利用功率管理叫 疋22來控财錫作模式電路元件2?、_電路元件Μ、數位電路= 29以及嵌人式記憶體3G的示意圖,其類比電路元件28、數位電路元^ 以及喪入式記憶體30依舊係制傳統的單—輸出低壓降穩壓器Μ〜% 供應操作《’然而不_地方在於多重操作模式魏係彻可調節輪^ 200835123 =健降_器來._,透過控制訊號線32可以改變可調節的低壓降穩 堅為輸出端33的電壓。從這兩張圖中 & — ^ 」Λ有出了调即輪出的低壓降穩 了兩轉統單—輸出的低壓降穩㈣,而可觸輪出的低壓降穩 “本身所佔據的面執及耗損的功铸跟傳統單—輪_低壓降穩塵 益差不多,因此第1Β圖中的系統所佔有的面積以及耗損的功率會比第ια 圖中的系統還要小。 θ200835123 IX. INSTRUCTIONS: [Technical Field] The present invention relates to an adjustable output regulator, and more particularly to a low voltage having a stable operating mode with two sets of operational mode circuits. The voltage regulator can adjust the voltage of the output terminal to supply the operating voltage required by the multiple operating mode circuit components through the change of the control signal, and the high output voltage can be designed to be between 2·4ν~3〇ν; low output The voltage is set between L0V and 2.3V. [Prior Art] With the advancement of process technology, the single-chip design becomes more and more popular, and the functions of circuit components are also designed to be more and more powerful and complex. At this time, circuit components may have multiple operation modes to operate at different operating voltages. At the same time, in order to achieve low power consumption, many portable products use a power management unit (p〇wer Management Unit) to control the working time of each of the multiple operating mode private components to reduce the total power consumption of the system. FIG. 1A is a schematic diagram showing the use of the power management unit 11 to control the multi-operation mode circuit component 19, the analog circuit device 20, the digital circuit component 21, and the embedded memory 22 in a conventional portable product, wherein the analog circuit component 20 The required operating voltage is typically lower than the operating voltage required by the digital circuit component 21, so two low dropout regulators (LDO) 15, 16 need to be used to generate the operating voltages they need, respectively, while the embedded memory Body 22 itself also requires a low dropout regulator 17 to provide the operating voltage required for the idle state. Since the multi-mode circuit component itself has more operating panels, it also requires several low-dropout regulators B, I4 to generate the required operating voltage. Ik with multiple operation mode circuit components increase the complexity or the number of circuit elements 10, 200835123 included in the system is expanded, the power management cover is dimmed, and the early juice a complex complexity will follow more Stabilize the factory to generate the required operating voltage, so the low = 1 area and the loss of the damage will directly affect the system itself, if the area of the low-dropout regulator = and the consumption of _ _ _ _ The number of reductions (4) can be limited, and the circuit tree of multiple operation modes is affected. t ==, the system and circuit components are more complicated, in order to stabilize the factory and the bridge It is necessary to develop a new low-dropout stabilizer. In view of this, the inventor is in the spirit of active invention, purely a kind of "can be stabilized, sighing, smashing, smashing, smashing, smashing, smashing, smashing, smashing, smashing, smashing, smashing, smashing, smashing, smashing, smashing - The health-reducing calendar is a big difference. After several research experiments, the invention has been completed. [Invention] The main object of the present invention is to provide an adjustable output low-dropout regulator over control signal. „Value, and the face of the recorded _ and _ of the face pass = low secret H gap, so the design of the Lee ride invention can replace the number of the early output low pressure drop n into the mosquito rate match (four) unit Electricity (4) The whole action. The mth picture is similar to the first picture. In the explicit portable product, the power management is called 疋22 to control the tin circuit mode component 2, the _ circuit component Μ, the digital circuit = 29, and the embedded memory 3G. Schematic diagram, analog circuit component 28, digital circuit device ^ and immersive memory 30 are still traditional single-output low-dropout regulators %~% supply operation "'but not _ place lies in multiple operation mode Wei-Cai Adjustable wheel ^ 200835123 = step _ _ _ _ _, through the control signal line 32 can change the adjustable low voltage drop to stabilize the voltage of the output terminal 33. From the two pictures & - ^ Λ Λ 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 轮 轮 轮 轮 低压 低压 低压 低压 低压 低压 低压 低压 低压 低压 低压 低压 低压 低压 低压 低压 低压 低压 低压 低压 低压 低压 低压 低压 低压 低压 低压And the loss of power cast is similar to the traditional single-wheel _ low-pressure drop stability, so the area occupied by the system in Figure 1 and the power consumed will be smaller than the system in Figure ια.
。依據本發明之特色,本發明可調節輸㈣低壓降穩壓器,用以供應多 重操作模式電路元件的操作電壓,且可以配合功率管理單元進行調整輸出 電壓的動作,該可調節輸出的低壓降穩壓器主要包括:—可調節的參考電 壓產生器’用以接收_輸人賴,並透過—控制訊號線可以產生兩組不同 的疋參考電壓’-個錯紐A||,用來比較輸出電壓值跟參考電壓值, 並根據兩者1鞋録鶴—p型金魏化铸體場效電晶體㈣pe MOSFET)對低麟祕n輸出端充電;—授電阻,用來調整輸出電壓 值與參考賴值之間的_ ;以及-個動賊電路徑,絲加速輸出端從 高電壓轉換成低電壓的過程。 由於本發畴構龍,能夠提供產業上_,增加系統㈣穩壓器的 數量以及有效的調整電壓,故依法申請發明專利。 【實施方式】 有關本發明之實施例’請蒼照第二圖顯示本發明可調節的低壓降穩壓 為之不意圖’其主要_-個具有調節功能之參考電壓產生器(Ad—ble Reference Voltage Genemt〇r)34來提供參考電壓(Vref)43,透過控制訊號48 的改變,可以產生不同的參考電壓43:當控制訊號48被設定為邏輯零(1〇gic zero)時,參考電壓43會被設定等於2.3276V ;當控制訊號48被設定為邏 12 200835123 輯一(logic one)時,參考電壓會被設定等於0.981V。 參考電壓43產生後,會被傳送至錯誤放大器的負輸入端,而錯誤放 大裔會比較參考電壓43以及回授電壓(Vf)44兩者之間的差異,進而產生 一放大為輸出訊號(V〇2)45給一 P型金屬氧化半導體場效電晶體(p_type MOSFET)38以及動態放電路徑(Dynamic Discharging Path)41,使得可調節 的低壓降穩壓器輸出端(VQut)50在適當時機進行充、放電,其中動態放電 路徑係由一電位轉移緩衝器(Levei-Shift Buffer)36以及一 N型金屬氧化半 導體場效電晶體(N_tyPe MOSFET)37所組成,轉移緩衝器36係用來 將放大器輸出訊號45作電位轉移,使得N型金屬氧化半導體場效電晶體 的電流受到一定的控制。 ”田茶考電壓43比回授電壓44還要大時,錯誤放大器在比較過兩者電 壓後會產生低準位放大器輸出訊號45、給?型金屬氧化半導體場效電晶體 38以及動悲、放電路控4卜此時p型金屬氧化半導體場效電晶體%會根據 祕號開始對可調節的低壓降穩壓器輸出端%進行充電,而動態放電路 私在接收則低準位放大器輸出訊號Μ後,會傳送給電位轉移緩衝器並 t生緩衝的輪出而虎4^N型金屬氧化半導體場效電晶體^,由於此 丁 輸出為虎45係低準位,因此經過電位轉移緩衝器兄的處理後, 會將Ν型金騎化半細日體37完她卓铺规流(滅哪 current)產生進而增加功率耗損。. According to the features of the present invention, the present invention can adjust the (four) low-dropout voltage regulator for supplying the operating voltage of the multiple operating mode circuit components, and can cooperate with the power management unit to adjust the output voltage, and the adjustable output has a low voltage drop. The regulator mainly includes: - an adjustable reference voltage generator for receiving _ input, and through the control signal line can generate two different sets of 疋 reference voltage '- a wrong new A|| for comparison The output voltage value and the reference voltage value, and according to the two shoes, the crane-p-type gold Weihua cast field effect transistor (four) pe MOSFET) charge the low-lining n output; - the resistance is used to adjust the output voltage value and reference Between the _; and - a thief electric path, the wire accelerates the output from high voltage to low voltage. Due to the fact that this domain is a dragon, it can provide industrial _, increase the number of system (4) voltage regulators and effectively adjust the voltage, so apply for invention patents according to law. [Embodiment] Embodiments of the present invention are described in the second figure. The second diagram of the present invention shows that the adjustable low-dropout voltage regulator of the present invention is not intended to be the main reference voltage generator with an adjustment function (Ad-ble Reference). Voltage Genemt〇r) 34 provides a reference voltage (Vref) 43. Through the change of the control signal 48, different reference voltages 43 can be generated: when the control signal 48 is set to logic zero (1〇gic zero), the reference voltage 43 Will be set equal to 2.3276V; when the control signal 48 is set to logic 12 200835123 one (logic one), the reference voltage will be set equal to 0.981V. After the reference voltage 43 is generated, it is transmitted to the negative input terminal of the error amplifier, and the error amplification factor compares the difference between the reference voltage 43 and the feedback voltage (Vf) 44, thereby generating an amplification signal (V). 〇2)45 to a P-type metal oxide semiconductor field effect transistor (p_type MOSFET) 38 and a dynamic discharge path (Dynamic Discharging Path) 41, allowing the adjustable low dropout regulator output (VQut) 50 to be performed at the appropriate time Charge and discharge, wherein the dynamic discharge path is composed of a potential transfer buffer (Levei-Shift Buffer) 36 and an N-type metal oxide semiconductor field effect transistor (N_tyPe MOSFET) 37, and the transfer buffer 36 is used for the amplifier. The output signal 45 is used for potential transfer, so that the current of the N-type metal oxide semiconductor field effect transistor is controlled to some extent. When the Tiancha test voltage 43 is larger than the feedback voltage 44, the error amplifier will generate a low-level amplifier output signal 45, a metal-oxide-semiconductor field-effect transistor 38, and a sorrow, after comparing the voltages of the two. The circuit control 4b at this time, the p-type metal oxide semiconductor field effect transistor will start to charge the adjustable low-dropout regulator output terminal according to the secret number, while the dynamic discharge circuit privately receives the low-level amplifier output. After the signal is transmitted, it will be sent to the potential transfer buffer and the buffer will be generated. The Tiger 4^N type metal oxide semiconductor field effect transistor ^, because the output of this is the low level of the Tiger 45 system, so the potential transfer buffer After the treatment of the brother, the 金-type gold rides the semi-fine body 37 to complete her arbitrage flow (destroy current) and increase the power consumption.
滅43比回授電壓44還要小時,錯誤放大器在比較過兩者電 雨出訊號45給p型金屬氧化半導體場效電晶體 此時P型金屬氧化半導體場效電晶體38會被完 I氏壓降穩壓輪㈣5()進行充電,而動態放電 :衝器處理後,t產生緩衝器輸出訊號46將N型 200835123 金屬氡化轉體場效電晶體37打開,使得可調節的低壓降穩壓 5G開始進行M。 & * f可調節的低壓降穩·輸出端50在進行充電或放電的時候,會同 時透過回授網絡42改變回授電壓44,讓錯誤放大器35重新進行比較^考 電壓43與回授電壓44,使得充電或放電程序繼續進行,直到回授電壓料 跟參考電壓43相同後才會停止充電或放電的行為,而此時低壓降穩壓器 輸出端也產生所需要的輸出電壓值。 • 回授網絡42係由兩個回授電阻(知、祕9、4〇所組成,而可調節的 低壓降穩壓器輸出端50與回授電壓44之間的關係為% = VoutKRfi/Rfl+R^)。可調節的低壓降穩壓器輸出端5〇的電壓跟參考電壓汜 以及回授電阻39、40有相對的關係,如果選擇不—樣的回授網絡即可得 到不同的輸出電屢值,例如:當參考電壓43等於〇·98ΐν時,而、=1地、 ¥98地’可調節的低壓降穩壓器輸出端5〇的電壓值為^ ;如果此時 採用另外-組回授網絡’即Rfl=81.9kn、Rf2=98lkn,此時低壓降穩^ 輸出端5G的電壓值會變為L8V。由此可得知透過不同的參考電壓43以: • 回授網絡42可以產生不同的輸出電壓值。 具有調節魏的參考電壓產生H 34係完全姻式金屬氧化半導 場效電晶體(CMOS)技術來實現,第三圖為具有調節功能的參考電壓產生 器之示意圖,其工作原理主要為透過自我偏壓的電流叩 Current Mirror)產生偏壓電流52,利用此偏壓電流導通兩個二極連接 (Diode-Connected)的N型金屬氧化半導體場效電晶體(M1、M2>53、%, 進而產生參考電壓57。其巾Ν型金屬氧化半導體場效電晶體%%的尺 寸必須要配合偏壓電&52的溫度係數做設計,使參考電壓π的溫度係數 (Low Tempemture Coefficient)降到最低,當環境溫度產生變化時,參考電 200835123 β·也月匕夠、隹持在疋的範圍内。N型金屬氧化半導體場效電晶體购% 連接到控制訊號線%,#控制訊號 、㈣被設定鱗輯辦,金細啦體場效電膨5被關掉,此 驗52 兩個二極連接的N型金屬氧化半導體場效電晶體^、 54進而產生-個高準位參考電龜:Vrcm+Vgs2= 23276v ; 當控制訊麟58被設定為邏輯—時,N型金屬氧辨導體場效電晶體% 被導通此日守偏堡電流&只流經一個二極連接的N型金屬氧化半導體場Off 43 is less than the feedback voltage 44. The error amplifier compares the two electric rain signals 45 to the p-type metal oxide semiconductor field effect transistor. At this time, the P-type metal oxide semiconductor field effect transistor 38 will be finished. The voltage drop regulator (4) 5 () is charged, and the dynamic discharge: after the processor is processed, the t-generating buffer output signal 46 turns on the N-type 200835123 metal bismuth turning field effect transistor 37, so that the adjustable low voltage is stabilized. Press 5G to start M. & * f Adjustable low-voltage drop-down · When the output terminal 50 is charging or discharging, it will change the feedback voltage 44 through the feedback network 42 to let the error amplifier 35 re-compare the test voltage 43 and the feedback voltage. 44, so that the charging or discharging process continues until the feedback voltage is the same as the reference voltage 43 to stop charging or discharging behavior, and at this time the output of the low-dropout regulator also produces the required output voltage value. • The feedback network 42 consists of two feedback resistors (Knowledge, Secret 9, 4), and the relationship between the adjustable low-dropout regulator output 50 and the feedback voltage 44 is % = VoutKRfi/Rfl +R^). The voltage of the adjustable low-dropout regulator output 5〇 is related to the reference voltage汜 and the feedback resistors 39 and 40. If you select a non-sample feedback network, you can get different output power values, for example. : When the reference voltage 43 is equal to 〇·98ΐν, then, =1, ¥98, the voltage value of the adjustable low-dropout regulator output terminal 5〇 is ^; if another-group feedback network is used at this time' That is, Rfl=81.9kn and Rf2=98lkn. At this time, the voltage of the output terminal 5G will become L8V. It is thus known to pass different reference voltages 43 to: • The feedback network 42 can produce different output voltage values. The reference voltage with the adjusted Wei is generated by the H 34 series fully oxidized semi-conductive field-effect transistor (CMOS) technology, and the third figure is a schematic diagram of the reference voltage generator with the adjustment function, which works mainly through self The bias current 叩Current Mirror) generates a bias current 52, and the bias current is used to conduct two Diode-Connected N-type metal oxide semiconductor field effect transistors (M1, M2>53, %, and further A reference voltage of 57 is generated. The size of the frame-type metal oxide semiconductor field effect transistor must be designed in accordance with the temperature coefficient of the bias voltage & 52 to minimize the temperature coefficient of the reference voltage π (Low Tempemture Coefficient). When the ambient temperature changes, the reference electricity 200835123 β· is also enough to hold in the range of 疋. The N-type metal oxide semiconductor field effect transistor purchase % is connected to the control signal line %, # control signal, (4) is Set the scales to do, the gold thin body field effect electric expansion 5 is turned off, this test 52 two two-pole connected N-type metal oxide semiconductor field effect transistor ^, 54 and then generate a high-level reference Turtle: Vrcm+Vgs2= 23276v; When the control Xunlin 58 is set to logic—the N-type metal oxygen-distributing conductor field-effect transistor % is turned on this day and the gated current & only flows through a two-pole connected N Metal oxide semiconductor field
文電a曰體53以及N型金屬氧化半導體場效電晶體%,制產生一個低準 位參考電壓mef2=VGsi+VDs2(Mc),8iv。 透過回授祕42的設計,抑制所之輸出輕值,而回授網路 42是由兩伽授電阻39、4G所組成的。為了要配合具有功能的參考 電驗生器34所提供的參考電壓幻進而產生所期望的輸出電壓值,回授 網絡也必須具備可調整的功能。第4圖表示包含調整功能之回授網絡67 的不意圖’其中回授網絡67依舊由兩㈣阻所組成,分狀回授電阻(%、A low-level reference voltage mef2=VGsi+VDs2(Mc), 8iv, is generated for the 曰-body 53 and the N-type metal oxide semiconductor field effect transistor. Through the design of the feedback secret 42, the output light value is suppressed, and the feedback network 42 is composed of two gamma-receiving resistors 39 and 4G. In order to produce the desired output voltage value in conjunction with the reference voltage illusion provided by the functional reference biometric 34, the feedback network must also have an adjustable function. Figure 4 shows the inadvertentness of the feedback network 67 including the adjustment function. The feedback network 67 is still composed of two (four) resistances, and the fractal feedback resistance (%,
Rg)59、6()。其中回授電阻⑹的阻值是㈣的,然而回授電阻即則是由 子回授電阻(Ra、Rb)6卜62以及—個N型金屬氧化半導體場效電晶體 (MCL)63所組成的,其阻齡根據控繼號線μ錢變。當控制訊號線 64被設定為邏輯零時,其N型金屬氧化半導體場效電晶體63會被關掉, 而回授電阻59的阻值為:Rg) 59, 6 (). The resistance of the feedback resistor (6) is (4), but the feedback resistor is composed of sub-return resistors (Ra, Rb) 6 and 62 and an N-type metal oxide semiconductor field effect transistor (MCL) 63. , its age is changed according to the control line. When the control signal line 64 is set to logic zero, its N-type metal oxide semiconductor field effect transistor 63 is turned off, and the resistance of the feedback resistor 59 is:
Rfi = Ra + Rb ’而低壓降穩壓ϋ輸出端65的電壓跟回授電壓⑽的關係為· v0ut = (l+CRa+RbyRyxVf;當控制訊號線64被設定為邏輯—時,其Ν型々 屬氧化半導體場效電晶體63會被打開,此時子回授電阻 一Rfi = Ra + Rb 'and the relationship between the voltage of the low-dropout regulator ϋ output 65 and the feedback voltage (10) is v0ut = (l + CRa + RbyRyxVf; when the control signal line 64 is set to logic - its type The bismuth oxide semiconductor field effect transistor 63 will be turned on, and the sub-return resistor
Oi不會有電流流 過,因此回授電阻59的阻值為:% = ^,而低壓降穩壓器輪出端幻、帝 壓跟回授電壓66的關係為: 、包 15 200835123Oi does not have current flowing, so the resistance of the feedback resistor 59 is: % = ^, and the relationship between the low-dropout regulator's wheel-end illusion, the voltage and the feedback voltage 66 is: , package 15 200835123
Vout^G+KbVRf^xVf。透過控制訊號線64的設定,低壓降穩壓器輪出端 65的電壓與回授電壓66(亦指參考電壓)會有不同的關係,藉由此回授網 絡67配合具有調節功能的參考電壓產生器一起使用即可產生兩個所期望 的輸出電壓,分別介於1〇v〜2.3V以及2.4V〜3.0V。 由以上之說明可知,本發明可調節的低壓降穩壓器係主要利用一具有 調節功能的參考電壓產生器以及一可變回授網絡經由錯誤放大器組成附 回授迴路,透過控制訊號線的改變,使得參考電壓值以及回授網絡阻值互 相搭配形成所期望的輸出穩定電壓,其中包含一個動態放電路徑加速進行 高電壓轉低電壓的過程。 絲上所陳,本發明在目的、功效及發法均顯示其不同凡響之特性,實 為一極具實用價值之發明。惟應注意的是,上述實施例係為了便於解說而 已,本發明所主張之權力範圍非僅限於上述實施例,而凡與本發明有關之 技術構想,均屬於本發明之範疇。 【圖示簡單說明】 第1A圖係料功普理單元個數個傳統低壓降穩壓器來,鶴不同的内 部電路元件之示意圖。 第Θ係力率f理單元使用數個傳統低壓降穩壓器以及一個可調節的低 壓降穩壓器來驅動内部電路元件之示意圖。 第2圖係本發明可調節的低壓降穩壓器之整體架構圖。 第3圖係本發明可調節的低麟穩壓器内部所包含之具有觸功能的參考 電壓產生器之示意圖。 16 200835123 第3圖係本發明可調節的低壓降穩壓器内部所包含的回授網絡之示意圖 【主要元件符號說明】 低壓降穩壓器 13, 14, 15, 16, 17, 24, 25, 26 _ 控制單元 12, 31 可調節的低壓降穩壓器 23,501 錯誤放大器 35 具有調節功能的參考電壓產生器 34 動態放電路徑 41 功率管理單元 11,22 • 多重操作模式電路元件 18, 27 類比電路元件 19, 28 數位電路元件 20, 29 遷入式記憶體 21,30 控制訊號線 32, 48, 58, 64 可調節的低壓降穩壓器輸出端 33, 50, 65 輸入電壓 47, 51 17 200835123 參考電壓 43, 57 回授電壓 44, 66 接地線 49 回授網絡 42, 67 回授電阻 39, 40, 59, 60 子回授電阻 61,62 篇壓電流 52 N型金屬氧化半導體場效電晶體 37, 53, 54, 63 P型金屬氧化半導體場效電晶體 38 電位轉移緩衝器 36 放大器輸出訊號 45 緩衝器輸出訊號 46 18Vout^G+KbVRf^xVf. Through the setting of the control signal line 64, the voltage of the low-voltage drop regulator terminal 65 and the feedback voltage 66 (also referred to as the reference voltage) have a different relationship, whereby the feedback network 67 is matched with the reference voltage having the adjustment function. The generators are used together to produce two desired output voltages, ranging from 1〇v to 2.3V and 2.4V to 3.0V. It can be seen from the above description that the adjustable low-dropout regulator of the present invention mainly utilizes a reference voltage generator with an adjustment function and a variable feedback network to form a feedback loop via an error amplifier, and changes through the control signal line. The reference voltage value and the feedback network resistance are matched to each other to form a desired output stable voltage, which includes a dynamic discharge path to accelerate the process of high voltage to low voltage. The invention has been shown on the silk, and the invention has its extraordinary characteristics in terms of purpose, efficacy and hair expression, and is actually a practical invention. It should be noted that the above-described embodiments are for convenience of explanation, and the scope of the invention is not limited to the above embodiments, and all the technical ideas related to the present invention fall within the scope of the present invention. [Simplified illustration] Figure 1A shows a schematic diagram of several different internal circuit components of a conventional low-dropout regulator. The Dijon power rate unit uses several conventional low-dropout regulators and an adjustable low-dropout regulator to drive the internal circuit components. Figure 2 is an overall architectural diagram of an adjustable low dropout regulator of the present invention. Figure 3 is a schematic diagram of a tactile reference voltage generator included in the tunable low-voltage regulator of the present invention. 16 200835123 Figure 3 is a schematic diagram of the feedback network included in the adjustable low-dropout regulator of the present invention. [Main component symbol description] Low-dropout regulator 13, 14, 15, 16, 17, 24, 25, 26 _ Control unit 12, 31 Adjustable low-dropout regulator 23, 501 Error amplifier 35 Reference voltage generator with regulation function 34 Dynamic discharge path 41 Power management unit 11, 22 • Multiple operating mode circuit components 18, 27 Analog circuit components 19, 28 Digital circuit components 20, 29 Move-in memory 21, 30 Control signal lines 32, 48, 58, 64 Adjustable low-dropout regulator output 33, 50, 65 Input voltage 47, 51 17 200835123 Reference Voltage 43, 57 feedback voltage 44, 66 Ground line 49 feedback network 42, 67 feedback resistor 39, 40, 59, 60 sub-return resistor 61, 62 voltage current 52 N-type metal oxide semiconductor field effect transistor 37 , 53, 54, 63 P-type metal oxide semiconductor field effect transistor 38 potential transfer buffer 36 amplifier output signal 45 buffer output signal 46 18
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI408691B (en) * | 2008-11-06 | 2013-09-11 | Hynix Semiconductor Inc | Internal voltage generator |
TWI643191B (en) * | 2017-11-13 | 2018-12-01 | 慧榮科技股份有限公司 | Method for controlling operations of memory device, associated memory device and controller thereof, and associated electronic device |
CN113169582A (en) * | 2018-12-03 | 2021-07-23 | 株式会社自动网络技术研究所 | Backup power control device for vehicle and backup power device for vehicle |
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2007
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI408691B (en) * | 2008-11-06 | 2013-09-11 | Hynix Semiconductor Inc | Internal voltage generator |
TWI643191B (en) * | 2017-11-13 | 2018-12-01 | 慧榮科技股份有限公司 | Method for controlling operations of memory device, associated memory device and controller thereof, and associated electronic device |
US10431262B2 (en) | 2017-11-13 | 2019-10-01 | Silicon Motion Inc. | Method for controlling operations of memory device, associated memory device and controller thereof, and associated electronic device |
US10510379B1 (en) | 2017-11-13 | 2019-12-17 | Silicon Motion, Inc. | Method for controlling operations of memory device, associated memory device and controller thereof, and associated electronic device |
CN113169582A (en) * | 2018-12-03 | 2021-07-23 | 株式会社自动网络技术研究所 | Backup power control device for vehicle and backup power device for vehicle |
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