200834734 九、發明說明： 【發明所屬之技術領域】 本發明關於薄膜電晶體液晶顯示器(丁FT_LCD)製程之技術，尤 於-種改善_與_基板之間之附著力的方法， 銅艇在TFT-LCD製程中自玻璃基板上剝離。 t兄 【先前技術】 ffTFT-LCD螢幕尺寸的增加’金屬導線的長度將大幅增 路信號傳遞的快慢則決定於電阻⑻與電容(c)之乘積，rc 乘，值越小’信號傳遞速度就越快。根據目前的製程 古， =’而銅的電阻值僅約L66条，i銅 =、4之抗包致遷移能力(eleetr()n_migrati()n)優於|g，可在高密 =少導線斷開的機率，增加電路的可靠性。因此，在以“ 導線之時間遲滯現象之問題日益嚴 =況下’若改採銅作為導線，便可在較小的面積上承 的電流，並使電路更為密集。 然而，雖然銅的物理性質在應用於丁 FT_LCD製程上比銘更呈 門ΐϊ生基板上所沉積的銅膜與玻璃基板之間的應； r 不^附者力而引起剝離現象，所以無法進行後續相關製 二2而效改善銅膜與玻璃之間的附著力，則無法以 銅取代銘而實際應用於TFT-LCD。 鑒於上述習知技術之問題，本發明之目的為提供—緩衝 【發明内容】 方本本t m目的在於提供一種改善銅膜與玻璃之間之附著力的 方法，以避免銅膜自玻璃基板上剝離。 根據本發明之—實鋪樣，提供改善編與_基板之間之 200834734 附著力的方法，包含以下步驟:在處理系統中設置一玻璃基板；利 用物理氣相沉積法，將一緩衝膜沉積於該玻璃基板上；及利用物 理氣相沉積法，將一銅膜沉積於該緩衝膜上，其中該缓衝膜分別 與該玻璃基板與該銅膜形成強附著力與金屬鍵結，且其組成係選 自於由鎳(Ni)、鉻(Cr)、鈒(V)、鉬(Mo)、銳(Nd)、紐(Ta)、鎢(w)、 鎳合金、鉻合金、釩合金、鉬合金、銳合金、鈕合金、鎢合金所 組成之族群其中至少一者或其組合。 〃口〃 丹有 ^ ^很據本叙明之實施態樣，処牲系既係利用載具來承載 玻璃基板以避免玻璃基板產生破損，且載具可為持續進又濺铲室 之稷數個載具’不鮮第—台載具回傳至基板裝卸室U韵 =持=入濺J室進行鍍膜製程’直到所有腔室中均充;载? 第-麵室、第二雜室、及退火室四個卜腔 工狀恶，因此可促進緩衝膜與銅膜之品質，而查S ，與玻璃基板之間的高附著力可靠度。而 =薄，所以利用RF或DC電源進行沉積製程，除了可到j J好之緩衝膜以增進銅臈與玻璃基板之間的附上口貝 會增加太多鑛膜時間’所以不會影響量能、’ ^ 相關產業大型;t產之薄醜鍍設備。電產業及其他 【實施方式】 瞭解。其愤βί ==== 輯本發明之徹底 例。因此’本發明並不僅限於所 200834734 技藝者所暸解之任意變化及其同等物。 圖1係根$本發明之一實施例之銅膜在玻璃基板上之結構 圖。由圖1所示，以下將說明形成此結構之方法。首先設置一玻璃 基板10，接著，利用物理氣相沉積(PVD)法將一緩衝膜20沉積於玻 璃基板10上作為銅膜30與玻璃基板10之間的緩衝層，該緩衝膜2〇 可與玻璃基板10油卿分卿成_，雜觀細2G可盘玻 ，基板10與銅膜30之間分別形成強附著力。緩衝膜2〇之成分可 單元金屬或合金，且其厚度約為100人以上。 … 由於直接將銅膜沉積於玻璃基板上會因為銅原子益法I玻璃 主成分Si〇2形成鍵結而造成剝離、撓曲現象，因此，上述^衝層 之功能在於使銅膜30與玻璃基板10之間形成強附著力。所^ 人必須選擇分別可與Si〇2中的贼〇形成鍵結、並能與銅 ^ 鍵結的金屬材料。銅屬於過渡金屬，其電子組態為·· [Ar]3dlG4sl， 士巧氧德雜為：269〇/md。吾人胁上雜料找鱼銅处 合日了可以使雙方之電子組態呈現_域、及最外層8軌域呈現全滿口 或半滿之狀態的金屬材料，且該㈣與氧之鍵結能必須超過/ 269KJ/mol。更具體而言，滿足上述條件之金屬材料，亦 膜20，可包含過渡金屬，例如，包含選自於由錄⑽、絡、、、^ (v〕、鉬、鈮、鈕(Ta}、鎢(W}、鎳合金、鉻合金、釩2 、鈮合金、鈕合金、鎢合金所組成之族群其中至少一"者或 表1分別為上述過渡金屬之電子組態與氧之鍵結能、及豆人人 之主要元素、添加元素的重量百分比組成。 /、口至 200834734 表i: 主要元素 電子組態、 合金種類 與氧鍵結能 添加元素及其重量百分比 鶴 [Xe]4f145d46s2 鎢鈦合金 W-0:672KJ/mol 鎢銅合金 鈦、銅含量5〜50wt% 鎳 [Ar]3d84s2 鎳銅合金 Ni-0:382KJ/mol 鎳鋅合金 銅、鋅含量5〜50wt% 鈮 [Kr]4d45sl 鈮鈦合金鈦、銅、銘、鈕含量5〜50wt% N1>0: 771 KJ/mol 鈮銅合金 鈮1 古合金 鈮钽合金 组 [Xe]4f145d36s2 钽鎢合金 Ta-0:799.1 KJ/mol 钽銅合金 鎢、銅含量5〜50wt% 鈒 [Ar]3d34s2 釩鉻合金 V-0:626.8KJ/mol 釩銅合金 鉻、銅含量5〜50wt% 鉻 [ArjBd^s1 鉻銅合金 Cr-0:429KJ/mol 鉻鎳合金 銅、鎳含量5〜50wt% 鉬 [1^14^581 鉬鈦合金 鈦、鎢、銅含量5〜50wt% Mo-〇:560KJ/mol 鉬鎢合金 ____鉬銅合金_____· 接著，利用物理氣相沉積法將銅膜30沉積於緩衝膜20上，如 上述關於形成鍵結之說明，緩衝膜20可與銅膜30形成金屬鍵結而 具有強附著力，因而使得銅膜30可藉此緩衝層而有效地形成於玻 璃基板10上，並且不會在後續TFT-LCD製程中自玻璃基板10上剝 離。 最後，再針對上述結構進行附著力測試。本實施例之附著力 測試係根據ASTM D3359_02標準之金屬膜附著力測試方法(百格 試驗），主要是將金屬膜鍍於基材上，接著利用百格刀在待測^屬 8 200834734 膜上刮出100格的方格，每一小正方格的尺寸為·· 。隨 後將3M Scotch的6KMPK膠帶平貼於所刮出的百格區域，並確認 膠帶與膜面間沒有氣泡，然後固定測試樣本，在一特定時間内、 以垂直膜面的方向拉開膠帶，隨後進行膜面之脫落面積的計算， 以此數據對照附著力測試分級來判定金屬膜的附著力級數。附著 力分級表如下表2。 表2 ·· 級數 5B 〇%無任何脫落 4B <5% 3B 5-15% 2B 15-35% 1B 35-65% 0B > 65% 銅膜層它不同緩娜 測試，比較結果如下^ dff上’然後進行上述附著力 與玻璃基板之間的附著力。、疋見本赉明之缓衝膜確能改善銅膜 200834734200834734 IX. INSTRUCTIONS OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a thin film transistor liquid crystal display (D-FT_LCD) process technology, and more particularly to a method for improving the adhesion between a substrate and a _ substrate, a copper boat in a TFT - Peel off the glass substrate in the LCD process. t brother [previous technology] ffTFT-LCD screen size increase 'the length of the metal wire will increase the speed of the signal transmission is determined by the product of the resistance (8) and the capacitance (c), rc multiplied, the smaller the value 'signal transmission speed The sooner. According to the current process, =' and the resistance value of copper is only about L66, i copper =, 4 anti-bag migration ability (eleetr () n_migrati () n) is better than | g, can be high density = less wire break The probability of opening increases the reliability of the circuit. Therefore, in the case of "the problem of time lag of the wire is becoming more and more serious", if the copper is used as the wire, the current can be carried in a small area and the circuit is more dense. However, although the physics of copper The nature is applied to the D-FT_LCD process, which is better than the difference between the copper film and the glass substrate deposited on the gate substrate; r does not attach the force to cause the peeling phenomenon, so the subsequent related system 2 cannot be performed. Effectively improving the adhesion between the copper film and the glass, it cannot be practically applied to the TFT-LCD by replacing the copper. In view of the above problems of the prior art, the object of the present invention is to provide a buffer - the content of the invention It is to provide a method for improving the adhesion between a copper film and a glass to avoid peeling of the copper film from the glass substrate. According to the present invention, a method for improving the adhesion of the 200834734 between the substrate and the substrate is provided. The method comprises the steps of: disposing a glass substrate in the processing system; depositing a buffer film on the glass substrate by physical vapor deposition; and using a physical vapor deposition method to form a copper layer Deposited on the buffer film, wherein the buffer film and the glass substrate respectively form strong adhesion and metal bonding, and the composition thereof is selected from nickel (Ni), chromium (Cr), bismuth ( At least one of V), molybdenum (Mo), sharp (Nd), neon (Ta), tungsten (w), nickel alloy, chrome alloy, vanadium alloy, molybdenum alloy, sharp alloy, button alloy, tungsten alloy Or a combination of them. 〃口〃 Dan has ^ ^ very according to the implementation of this description, the Department of the Department uses the carrier to carry the glass substrate to avoid damage to the glass substrate, and the carrier can be continuous and splash shovel The number of vehicles in the room is 'not fresh' - the carrier is transferred back to the substrate loading and unloading room U rhyme = holding = into the splash chamber J for the coating process 'up to all the chambers are filled; carrying the first - chamber, the first The two chambers and the annealing chamber have four chambers, so the quality of the buffer film and the copper film can be promoted, and the high adhesion reliability between the S and the glass substrate can be checked. The DC power supply is subjected to a deposition process, in addition to the buffer film that can be used to improve the attachment of the copper enamel to the glass substrate, which will increase the too much mineral film. 'So it will not affect the quantity and energy, ' ^ related industries are large; t thin and ugly plating equipment produced by t. Electric industry and other [implementation] understand. Its anger βί ==== complete examples of the invention. Therefore 'the invention It is not limited to any variation known to those skilled in the art of 200834734 and its equivalents. Fig. 1 is a structural diagram of a copper film according to an embodiment of the present invention on a glass substrate. As shown in Fig. 1, the formation will be described below. First, a glass substrate 10 is disposed. Then, a buffer film 20 is deposited on the glass substrate 10 by a physical vapor deposition (PVD) method as a buffer layer between the copper film 30 and the glass substrate 10, the buffer film. 2〇 can be combined with the glass substrate 10, and the fine 2G can be plated, and the substrate 10 and the copper film 30 respectively form strong adhesion. The composition of the buffer film 2 can be a unit metal or an alloy and has a thickness of about 100 or more. Because the copper film is directly deposited on the glass substrate, the copper atomic layer I and the glass main component Si〇2 form a bond, which causes peeling and deflection. Therefore, the function of the above-mentioned layer is to make the copper film 30 and the glass. Strong adhesion is formed between the substrates 10. The person must select a metal material that can form a bond with the thief in Si〇2 and bond with copper. Copper is a transition metal with an electronic configuration of [Ar]3dlG4sl and a skeletal oxygen mixture of 269〇/md. I have threatened to find the fish copper at the end of the day, so that the electronic configuration of both sides can appear as the metal material in the state of full or half full state, and the bonding energy of oxygen can be Must exceed / 269KJ/mol. More specifically, the metal material satisfying the above conditions, and the film 20, may further comprise a transition metal, for example, comprising selected from the group consisting of (10), complex, , ^ (v), molybdenum, niobium, button (Ta}, tungsten (W}, nickel alloy, chrome alloy, vanadium 2, niobium alloy, button alloy, tungsten alloy, at least one of which is the electronic configuration of the above transition metal and oxygen bonding energy, And the main elements of the bean and the weight percentage of the added elements. /, mouth to 200834734 Table i: Main element electronic configuration, alloy type and oxygen bonding energy added elements and their weight percentage crane [Xe]4f145d46s2 tungsten-titanium alloy W-0: 672KJ/mol Tungsten copper alloy Titanium, copper content 5~50wt% Nickel [Ar]3d84s2 Nickel copper alloy Ni-0: 382KJ/mol Nickel zinc alloy Copper, zinc content 5~50wt% 铌[Kr]4d45sl 铌Titanium alloy titanium, copper, Ming, button content 5~50wt% N1>0: 771 KJ/mol beryllium copper alloy 古1 ancient alloy niobium alloy group [Xe]4f145d36s2 tantalum tungsten alloy Ta-0:799.1 KJ/mol beryllium copper Alloy tungsten, copper content 5~50wt% 鈒[Ar]3d34s2 Vanadium chromium alloy V-0:626.8KJ/mol Vanadium copper alloy chrome, copper Amount of 5~50wt% Chromium [ArjBd^s1 Chromium-copper alloy Cr-0: 429KJ/mol Chromium-nickel alloy copper, nickel content 5~50wt% Molybdenum [1^14^581 Molybdenum-titanium alloy Titanium, tungsten, copper content 5~50wt % Mo-〇: 560 KJ/mol molybdenum-tungsten alloy _ molybdenum-copper alloy _____· Next, the copper film 30 is deposited on the buffer film 20 by physical vapor deposition, as described above for the formation of the bond, the buffer film 20 can form a metal bond with the copper film 30 to have strong adhesion, thereby allowing the copper film 30 to be effectively formed on the glass substrate 10 by the buffer layer, and not from the glass substrate 10 in the subsequent TFT-LCD process. Finally, the adhesion test is performed on the above structure. The adhesion test of the present embodiment is a metal film adhesion test method according to ASTM D3359_02 (Baby test), mainly for plating a metal film on a substrate. Then use the 100-grid knife to scrape the 100-square square on the film to be tested. The size of each small square is... Then 3M Scotch's 6KMPK tape is flattened to the scratched square. Area, and confirm that there is no air bubble between the tape and the membrane surface, then fix the test sample, The tape is pulled in a direction perpendicular to the film surface for a specific period of time, and then the calculation of the area of the film surface is performed, and the adhesion level of the metal film is determined by the data according to the adhesion test classification. The adhesion rating table is shown in Table 2 below. Table 2·· Series 5B 〇% without any shedding 4B < 5% 3B 5-15% 2B 15-35% 1B 35-65% 0B > 65% Copper film layer It is different from the test, the comparison results are as follows ^ On dff, 'the adhesion between the above adhesion and the glass substrate is then carried out.疋 See Ben Mingming's buffer film can improve copper film 200834734
缓衝膜組成 脫落面積(％) 附著力等級 無缓衝膜 100% 0B 約100A之铪(Hi)金屬 100% 0B 約100人之鍅(Zr)金屬 100% 0B 約100A之鈮(Nb)金屬 0% _ 5B 約100A之钽(Ta)金屬 0% 5B 約100人之鈮钽合金 0% 5B 註:Hf-Ο之鍵能為：801KJ/mol電子組態 Zr-Ο之鍵能為：776KJ7mol電子組態 [Xe].4f145d26s2 :[Kr].4d25s2Buffer film composition shedding area (%) Adhesion level without buffer film 100% 0B About 100A (Hi) metal 100% 0B About 100 people (Zr) metal 100% 0B About 100A (Nb) metal 0% _ 5B About 100A Ta (Ta) metal 0% 5B About 100 people 铌钽 alloy 0% 5B Note: Hf-Ο bond energy: 801KJ / mol electronic configuration Zr-Ο bond energy: 776KJ7mol Electronic configuration [Xe].4f145d26s2 :[Kr].4d25s2
圖2係根據本發明之實施例概略地說明形成缓衝膜/銅膜之處 理系統的方塊圖。 ' 、如圖2所示，處理系統1〇〇包含；一基板裝卸室1〇2，用以放置 未成膜之基板及取下已成膜之基板的腔室；一緩衝室1〇4，係未成 膜之基板自大氣進入真空的緩衝腔室，其作用在於使具有加熱裝 置(未顯示)之加熱室106得以持續保持在真空狀態，並可進一步延 長加熱裝置的使用壽命；一加熱室1〇6，用以加熱基板，使基板升 溫；第一濺鍍室108，用以形成緩衝膜；第二濺鍍室11〇，用以形 成銅膜，一退火室112，其作用在於進行退火處理以增進鑛膜品 質，一緩衝室114，使基板降溫且為使已形成鍍膜之基板自真空進 入大氣的緩衝腔室，其作用在於使具有加熱裝置(未顯示)之&火室 112持續保持在真空狀態，並可進—步延長加熱裝置的使用壽命； 升降系統116及運輸系統118 ,用以將基板回傳之傳輸系統。 首先，在形成鍍膜之前先利用抽氣系統(未顯示)將加埶室 106、第一濺鍍室1〇8、第二濺鍍室11〇、及退火室112四個腔室之 壓力由1大氣壓降至10 6 torr的真空度。接著，通入氬氣使壓力由1〇_6 torr回升至10 torr，並開啟加熱室1〇6、第一濺鍍室1〇8、第二濺鍍 至110、及退火至112的加熱裝置(未顯示）以使四個空室保持 12(TC，@而完錢理系統觸的前置作業。獨：至保持於 200834734 接下來將示範性地說明在玻璃基板10上形成緩衝膜2〇/銅膜3〇 的流程。 ' 將清洗完成之玻璃基板ίο送入基板裝卸室102並置於載具η 上再傳送至緩衝室1〇4。接著，利用抽氣系統將緩衝室1〇4由大 壓降至ΙΟ—3 torn隨後將載有玻璃基板10之載具u傳送至加熱室 以清潔基板表面上的水份及一些有機物質。接著，再將載、有 基板10之載具11傳送至第一濺鍍室108以進行緩衝膜2〇之沉且 體而言，形成緩衝膜20之條件包含，例如使玻璃基板 鍍至108中保持於120 C，利用RF電源來進行緩衝膜2〇之沉产丰 緩衝膜2G之厚度_从，在形成緩衝顧之後，續將載右』踏^ 板10之載具11傳送至第二濺鍍室110以進行銅膜30之沉積二…土 本實施例之銅膜沉積條件包含，例如使玻璃基板10在 鐘室110中保持於12(TC ’並使用DC電源來沉積銅膜30，待至 ，定厚度後’ 做玻雜板1G之載具n舰至退 = 行退火處理。具體而言，退火處理之條件包含，例如使 1 在退火室m中保持於12代且停留約5分鐘，隨後利用抽^统 (未顯不)將緩衝室114之壓力自i大氣壓降至1〇-3t〇rr，再將有玻 璃基板ίο之載具η傳送至缓衝室114進行降ϋ 於价之後，利用氮氣使緩衝室114之壓力自妒^ ί;==Γί系統116與運輸系統118將載有玻璃基板1。之贫 基板衣卸室102 ’因而完成利用處理系統100、依序在 玻璃基板10上沉積緩衝膜20與銅膜3〇的流程。 外社 ㈣理/統觸例如可為連續式驗機，並利用載具η來 ，室刚、no之複數個載具，不須等第4載 ^卸，102，第二台載具便可持續進入 行^ 以==腔室Λ均充滿載具為止’因此，此處理 Λ’二於持續使蝴室1G6、第-錢鑛室108、 弟-雜至m、及退火至112_腔室保持真空狀態，因此可促 11 200834734 ΐίί，巧以不會影響量產產能。另-方面、，利 ^旦用電源，成厚度較厚的銅膜3G，可縮短沉積時間以二 门菜界里舰用。此處理系統觸之魏與賴材料，可依 史ΐ杈Ϊ非僅限制於此實施例所述之應用，並可應用Figure 2 is a block diagram schematically illustrating a buffer film/copper film processing system in accordance with an embodiment of the present invention. As shown in FIG. 2, the processing system 1 includes: a substrate loading and unloading chamber 1〇2 for placing an unformed substrate and removing a chamber of the film-formed substrate; a buffer chamber 1〇4, The unfilmed substrate enters the vacuum buffer chamber from the atmosphere, and functions to continuously maintain the heating chamber 106 having the heating device (not shown) in a vacuum state, and further extend the service life of the heating device; 6. The substrate is heated to heat the substrate; the first sputtering chamber 108 is used to form a buffer film; the second sputtering chamber 11 is used to form a copper film, and an annealing chamber 112 is used for annealing treatment. Enhancing the quality of the mineral film, a buffer chamber 114, cooling the substrate and a buffer chamber for allowing the substrate to be coated to enter the atmosphere from the vacuum, the function of which is to maintain the & fire chamber 112 with heating means (not shown) The vacuum state can further extend the service life of the heating device; the lifting system 116 and the transportation system 118 are used to transfer the substrate back to the transmission system. First, the pressures of the four chambers of the twist chamber 106, the first sputtering chamber 1〇8, the second sputtering chamber 11〇, and the annealing chamber 112 are firstly used by a pumping system (not shown) before forming the plating film. The atmospheric pressure drops to a vacuum of 10 6 torr. Then, argon gas is introduced to raise the pressure from 1 〇 6 torr to 10 torr, and the heating device 1 〇 6 , the first sputtering chamber 1 〇 8 , the second sputtering to 110 , and the annealing to 112 heating device are turned on. (not shown) to keep the four empty chambers at 12 (TC, @) and the front-end operation of the system touch. Unique: to remain at 200834734 Next, the formation of the buffer film 2 on the glass substrate 10 will be exemplarily explained. /Pressing of the copper film 3'. The cleaned glass substrate ίο is fed into the substrate loading and unloading chamber 102 and placed on the carrier η and then transferred to the buffer chamber 1〇4. Then, the buffer chamber 1〇4 is used by the pumping system. The large pressure drops to ΙΟ3 torn, and then the carrier u carrying the glass substrate 10 is transferred to the heating chamber to clean the water and some organic substances on the surface of the substrate. Then, the carrier 11 carrying the substrate 10 is transferred. The conditions for forming the buffer film 20 to the first sputtering chamber 108 to form the buffer film 2 include, for example, plating the glass substrate to 108 C at 120 C, and performing buffer film 2 using an RF power source. The thickness of the sinking buffer film 2G _ from, after forming the buffer Gu, will continue to carry the right 』 step ^ board 10 The carrier 11 is transferred to the second sputtering chamber 110 to perform deposition of the copper film 30. The copper film deposition conditions of the present embodiment include, for example, maintaining the glass substrate 10 at 12 (TC ' in the bell chamber 110 and using The DC power source is used to deposit the copper film 30, and after the thickness is set, the carrier of the glass plate 1G is subjected to annealing treatment. Specifically, the conditions of the annealing treatment include, for example, 1 in the annealing chamber m. Hold the 12th generation and stay for about 5 minutes, then use the pumping system (not shown) to reduce the pressure of the buffer chamber 114 from i atmospheric pressure to 1〇-3t〇rr, and then transfer the carrier η with the glass substrate ίο to After the buffer chamber 114 is lowered in price, the pressure of the buffer chamber 114 is made to be self-contained by the nitrogen gas; the system 116 and the transport system 118 are loaded with the glass substrate 1. The substrate-removing chamber 102' is thus completed. The process of depositing the buffer film 20 and the copper film 3 on the glass substrate 10 by the processing system 100. The external (4) rational/common touch can be a continuous inspection machine, and the carrier η is used, the chamber is just, no For a plurality of vehicles, do not need to wait for the fourth load, 102, the second vehicle can continue to enter the line ^ to == chamber They are all filled with the carrier. Therefore, this process 持续 '2 continues to keep the butterfly chamber 1G6, the first money chamber 108, the younger to the m, and the annealing to the 112_ chamber to maintain a vacuum state, thus promoting 11 200834734 ΐ ί In order to avoid mass production capacity, another aspect, the use of power supply, into a thicker copper film 3G, can shorten the deposition time to use in the two-door industry. This processing system touches Wei and The material can be applied to the application described in this embodiment and can be applied
雖然以上僅詳述本發明之示範性實施例，但凡熟習此項技藏 =瞭解：上述之說贿是描述㈣非關性，在不脫離本發日】 $新穎教示及優點之情況下，可根據上述實施例而進行各種變化 、改。因此，所有此類修改應視為包含於本發明之專利範疇内。 12 200834734 【圖式簡单說明】 圖1係根據本發明之一實施例之銅膜在玻璃基板上之結構圖。 圖2係根據本發明之實施例概略地說明形成緩衝膜/銅膜之處 理系統的方塊圖。 【主要元件符號說明】 10〜玻璃基板 11〜載具 20〜緩衝膜 30〜銅膜 100〜處理系統 102〜基板裝卸室 104〜緩衝室 106〜加熱室 108〜第一濺鍍室 110〜第二濺鍍室 Π2〜退火室 114〜緩衝室 116〜升降系統 118〜運輸系統 13Although only the exemplary embodiments of the present invention are described in detail above, those skilled in the art will understand that the above-mentioned bribe is described as (4) non-compliance, without departing from the present invention. Various changes and modifications are made in accordance with the above embodiments. Accordingly, all such modifications are considered to be included within the scope of the invention. 12 200834734 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a structural view of a copper film on a glass substrate according to an embodiment of the present invention. Figure 2 is a block diagram schematically illustrating a buffer film/copper film processing system in accordance with an embodiment of the present invention. [Description of main component symbols] 10 to glass substrate 11 to carrier 20 to buffer film 30 to copper film 100 to processing system 102 to substrate loading and unloading chamber 104 to buffer chamber 106 to heating chamber 108 to first sputtering chamber 110 to second Sputtering chamber Π2~annealing chamber 114~buffering chamber 116~lifting system 118~transport system 13