TW200832746A - Light-emitting diode device and manufacturing method thereof - Google Patents

Abstract

A light emitting diode device includes a substrate and at least one light emitting diode element. The substrate has a first surface and a second surface. The first surface and the second surface are opposite disposed each other. The first surface has a plurality of the stepped convexes. A fabricating method of light emitting diode device is also disclosed.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroluminescent device and a method of fabricating the same, and more particularly to a light emitting diode device and a method of fabricating the same. Inch w [Prior Art] - Light Emitting Diode (LED) is a kind of cold light emitting element that is released in the form of light by utilizing the energy released by the combination of electron holes in a semiconductor material. Depending on the materials used, it can emit monochromatic light of different wavelengths, and can be mainly divided into visible light emitting diodes and invisible light (infrared) light emitting diodes. Two forms of light emitting diodes compared to conventional light bulbs. It has the advantages of economy, electricity, shock resistance and fast flashing speed, so it becomes an indispensable important component in daily life. Fig. 1, which is a schematic diagram of a conventional light-emitting diode device. A conventional light-emitting diode device 1 includes at least one light-emitting diode element 10 adhered to a transparent substrate u. Wherein, the emitter diode 10 includes a first semiconductor layer 1 and a light-emitting layer 1〇2 and a second semiconductor layer 103, a first semiconductor layer 10, a light-emitting layer 1〇2, and a first half. The bulk layer 1 〇 3 is sequentially disposed, a first _ contact electrode is connected to the first semiconductor layer 10 - the second contact electrode 1 〇 5 is connected to the second semiconductor layer 1G3 ′, and the first semiconductor layer (8) is a 卩 type semiconductor a layer, and the second semiconductor layer 103 is an n-type semiconductor layer as an example, when the first semiconductor M 1 〇 1, g two semiconductor layers 1 〇 3 are respectively applied

28306-CP 5 200832746 Producing with voltage + φ Α丄 When using Ρ-type semiconductor layers and η-type semi-conducting layers, electricity: holes are combined to convert electrical energy into light energy. A: The second figure 2A, which is the light field of the light-emitting diode device of the figure, the D-/V" 〇 〇 LED device 1 further comprises a package unit 12, which is generally used to seal the dream Each of the 1 ray is a lens, which is a hemisphere, and the light emitted by the 极-polar element 1 予以 is concentrated, that is, the direction of the line:: is concentrated near an optical axis 0S1. It is a lighting device with only suitable energy concentration such as a flashlight, a desk lamp or a cross-polar body: the guide = / Figure 2 Β 'It is the illuminating device of Figure 2! Application; Intention 'When the above-mentioned light-emitting diodes 1 and 4 are non-panel-type lateral backlight modules and groups, it is usually necessary to inject and combine to improve the uniformity of light. However, since the light gradually fading in the lateral direction gradually increases with the distance from the illuminating source, the light-emitting area of the display panel is limited. Broadcasting: To solve the problem of f, please refer to Figure 3A, which is another of the well--^ 〇 heart, figure. The white body reveals another lens body 22 which is applied to the first-level device 2, which is bonded to the substrate 21 to the first diode element 20, and the surface of the mirror body 22 is adjacent to the light. The periphery of the shaft OS2 has a concave-shaped concave state that greets the nine-axis # 〇S2 F# '/f ^ Φ and forms a divergent surface, which is used to bring the illusion close to the vicinity of the light, and to make the light-emitting diode 4 = diverging away from the optical axis, set 2 for a uniform and wide range of light-emitting surfaces, and can be directly applied to the back. However, as shown in Fig. 3Β, the design structure of the light-removing plate is omitted, and the mirror body 22 is a circular pair and a main circular symmetrical shape.

28306-CP 200832746 When the diode devices 2 are arranged and used as a backlight of the backlight module, the light-emitting areas A of the adjacent light-emitting diode devices 2 overlap each other, resulting in uneven luminous intensity. In view of this, how to provide a light-emitting diode device capable of adjusting the shape of a light field and a light field intensity distribution and a method of manufacturing the same are one of the important issues of the present day. SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a light-emitting diode device capable of adjusting a light field shape and a light field intensity distribution, and a method of fabricating the same. In order to achieve the above object, a light emitting diode device according to the present invention comprises a substrate and at least one light emitting diode element. The substrate has a first surface and a second surface disposed opposite to each other. The first surface has a plurality of step-like bumps, and the LED elements are disposed on one side of the substrate. In order to achieve the above object, a method for fabricating a light-emitting diode device according to the present invention comprises the steps of: providing a plate body; forming at least one light-emitting diode element on the plate body, and the light-emitting diode element sequentially comprises a a first semiconductor layer, a light-emitting layer and a second semiconductor layer, the first semiconductor layer is formed on the plate body; a substrate is provided, has a surface and has a plurality of step-like bumps thereon; and the adhesive substrate is disposed on the light-emitting diode Above the body element; and removing the board. In order to achieve the above object, another light-emitting diode package according to the present invention

28306-CP 7 200832746 The manufacturing method comprises the steps of: providing a plate body having a surface and having a plurality of step-like bumps thereon; and forming at least a light-emitting diode element on the plate body, and emitting light The polar body component sequentially includes a first semiconductor layer, a light emitting layer and a second semiconductor layer, and the first semiconductor layer is formed on the plate body. According to the above, an illuminating device and a manufacturing method thereof according to the present invention form a plurality of step-like bumps on one side of a substrate or a board, and the stepped bumps are used to adjust the illuminating diode component. The phase or direction of the light field of the emitted light beam reaches the function of changing the shape of the light field of the light beam or adjusting the intensity distribution of the light field, so that the light-emitting areas of the plurality of light-emitting diode elements do not overlap each other, thereby effectively improving the conventional technology. Uneven intensity. The step-like bumps may be formed on the light-emitting surface of the substrate or the board, or formed on the bonding interface of the substrate. In addition, by using the ten-thickness of the class-like bumps, it is possible to achieve the purpose of guiding the conventional technique to concentrate light on the optical axis and achieve the purpose of uniformizing the light-emitting area. Embodiments of the present invention: The same reference symbols are used for explanation. Referring to FIG. 4A, FIG. 4 is a ^ ^ ^ m ^ , which is a sound-emitting diode device according to one embodiment of the preferred embodiment of the present invention. Include a substrate 3 1 and at least one illumination

28306-CP 200832746 ^ Polar body element 32. In the present embodiment, the substrate 31 may be a transparent substrate, and the material thereof is selected from the group consisting of epoxy resin, optical glass, half V body, and combinations thereof. The semiconductor system may be a semiconductor of the dish _ v private, π-νι group or w group. Further, the substrate 31 may be a general-purpose epitaxial substrate made of tantalum carbide or aluminum oxide, for example, aluminum oxide (Al 2 〇 3 ) or the like. The substrate 31 has a first surface 311 and a first surface 312. The first surface 311 has a plurality of step-like bumps 313. In this embodiment, the stepped bumps 313 are a two-dimensional optical bump having a flat surface, wherein the step-like bumps 313 are symmetrically arranged, asymmetrically arranged or irregularly arranged, wherein the symmetric arrangement means that the optical axes of the beams are symmetrically arranged, in this embodiment In the example, each of the class-like bumps 313 has a microstructure having 2n hierarchical structures 'where n is a positive integer. _ However, the present invention is not limited thereto. For example, the stepped bumps 313 may be, in addition to the binary optical bumps having a flat surface, a bump having a curved surface, and the cross section thereof may be It is convex (as shown in Figure 4), concave (as shown in Figure 4C), wavy (as shown) or other shape. It should be noted that, for the sake of clarity, FIG. 4D only depicts the cross-sections of the various bumps in the circled portion of FIG. 4A, but the substrate of the LED device 3 is applied in a continuous application. The form of all of the stepped bumps 313 on the first surface 311 of 31. As shown in FIG. 4A, the LED component 32 is disposed on the substrate.

28306-CP 9 200832746 31 is one side, in this embodiment, the light emitting diode element 32 is connected to the second surface 312 side of the substrate 31, and the light emitting diode element % includes a first semiconductor layer 321, The light-emitting layer 322 and the second semiconductor layer 323 are disposed on the second surface 312 side of the substrate 31 in the order of the second semiconductor layer 323, the light-emitting layer 322, and the first semiconductor 321 . In the present embodiment, the first semiconductor layer 321 may be an n-type semiconductor layer 'the first semiconductor 323, which may be a -P type + conductor layer, but for example only 'when $, first The application of the semiconductors 21 & second semiconductor layer 323 to the n-type semiconductor layer and the p-type semiconductor layer can be interchanged according to the needs of the semiconductor. Further, as shown in Fig. 5, it is a schematic view of another light-polar device according to a preferred embodiment of the present invention. The light-emitting diodes 32 of the present embodiment may also be coupled to the first surface 3 11 side of the substrate 3, that is, the light-emitting electrode 32 is attached to the first surface 3 i of the substrate 3 i. The light-emitting diode device 3 of the present embodiment further includes a light-transmissive 2-layer 33 bonded to the substrate 3 and the light-emitting diode element w, that is, the transparent layer 4 is placed on the substrate 31 and The material of the light-transmitting adhesive layer 33 between the light-emitting diode elements w includes an epoxy resin. As shown in FIG. 4A and FIG. 5, the light-emitting diode device of the present embodiment is one of the poor: one electrode pair 34, which includes a first-contact electrode 341, and an electrode 342, which are respectively connected to the first semiconductor layer. The second semiconductor layer 32 and the second semiconductor layer 323' are respectively smothered by the first contact electrode 341 and the second first electrode W. two

28306-CP 200832746 The electrons and holes of the half body layer 323 are combined in the light-emitting layer 322, and the energy released by the electron hole combination is converted into a light beam, which is emitted toward the substrate 31, thereby using these classes. The shape of the bump 313 is micro-shaped: the design is to adjust the phase or direction of the light beam, so that the shape of the light field of the light beam is not circular, and the shape of the light field can be triangular, quadrangular or polygonal according to the design of the structure. As shown in Fig. 6, it is a view of the shape of the light field of a light-emitting diode device according to the embodiment of the present invention. In FIG. 6, the light field shape is square as an example, and adjacent: the plurality of light beams generated by the light-emitting diode device 3 can be adjusted because the light % shape can be adjusted, so that the adjacent light-emitting area A can be designed. It does not overlap and interfere with each other, but effectively improves the problem of uneven luminous intensity, and achieves the function of shaping the beam shape and adjusting the intensity distribution of the light field. In addition, the light-emitting diode device 3 of the present embodiment further includes a light-transmissive conductive layer disposed between the light-emitting diode element 32 and the substrate 31 (not shown) for improving current diffusion efficiency. Increasing the luminous efficiency of the one-electrode device 3. The material of the transparent conductive layer is extended from the group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide and combinations thereof. In this embodiment, as shown in FIG. 4A and FIG. 5, the LEDs 3 can be applied to a package structure in a fiip-chip form. Here, the LED device 3 further includes a package. The heat dissipation substrate 35 and the light emitting diode element 32 are connected to the heat dissipation substrate 35 in a flip chip form, and the first contact electrode 341 and the second contact electrode 342 of the connection light body element 32 are disposed on the light emitting diode element. 32 and heat dissipation substrate 35

28306-CP 11 200832746 0 Referring again to FIG. 7, FIG. 8A and FIG. 8B, a method of manufacturing a light-emitting diode device according to a preferred embodiment of the present invention includes steps from step S2 to step S2. Step si provides a plate body having a surface and having a plurality of step-like bumps thereon; and step S2 forms at least one light-emitting diode element on the plate body, and the light-emitting diode element sequentially includes one The first semiconductor layer, a light emitting layer and a second semiconductor layer are formed on the plate body. In order to make the description easier to understand, the same components are denoted by the same reference numerals. In the step S1, the plate body 30 is provided as a temporary substrate for fabricating the light-emitting diode component, and the material thereof comprises tantalum carbide (3η=〇η carbide) or sapphire (such as bismuth oxide) (〇3) After the plate has undergone a suitable cleaning step, the epitaxial layer growth of the subsequent diode element is performed. In this step, the surface of the plate 30, which is formed by the following steps. As shown in the figure, the first, 'the formation of the photoresist layer PR on the plate body 30, in this embodiment = ΓΤ is the photoresist layer of the positive photoresist coefficient, of course, can also be a negative number of photoresist layer; Thereafter, through a == in the present embodiment, the step of exposing is a gray-to-resistance process, and the process of exposing through the plurality of channels is performed by 曰PRk to different degrees of exposure effect to _PR to cause different = light fruit, and then Recording the photoresist layer PR and part of the plate body according to the exposure result

28306-CP 12 200832746 3〇' to form such stepped bumps 313. In this embodiment, the removal operation of the photoresist layer PR and a portion of the plate body 30 is removed by etching, and the etching rate of the plate body 30 and the photoresist layer PR is equivalent to etchant. The results of the gray scale exposure are transferred to the plate body 3, and S forms the step-like bumps 313. In addition, in step S1, the structure of the stepped bumps 313 may also be formed by the following steps. First, a photoresist layer PR is coated on the plate body 30; then the photoresist layer pR is imprinted with a mold 5 The mold 5 has a reverse pattern of the step-like bumps, and the embossing method can be formed by a soft embossing method or a hot embossing method; after the photoresist layer pR is cured, the mold core is removed. Finally, the photoresist layer PR and a portion of the plate body 3 are removed according to the stepped bumps 313 of the photoresist layer pR to form the stepped bumps 313. Here, since the material of the photoresist layer pR and the photoresist layer PR and a portion of the plate body 3 are removed as described above, they will not be described here. In this embodiment, the stepped bumps 313 are formed by a binary optical bump having a flat surface, which has 2, a hierarchical microstructure, and n is a positive integer, and The class-like bumps 313 may be arranged symmetrically, asymmetrically, or irregularly. Each of the white and/or bumps 3 13 may also be a bump having a curved surface, and the cross section may be convex (as shown in FIG. 4A), concave (as shown in FIG. 4C), and wavy ( As shown in Figure 4D) or other shapes. In step S2, as shown in FIG. δ, the light-emitting diode element 32 is formed on the plate body 30, that is, sequentially grown on the plate body 3〇.

28306-CP 13 200832746 The second semiconductor layer 323 can be an n-type semiconductor germanium-type semiconductor layer, but the semiconductor layer 321, a light-emitting layer 322 and a first semiconductor layer 321 layer in the present embodiment The second semiconductor layer 323 may be merely exemplary and is not limited thereto. The formation may also be performed in the step, after the stepped bumps 313 S2. After the step S2, the body element #32, in the embodiment, the second conductor layer 323 and the light-emitting layer 32Vj removal portion are formed in the package m - the first contact electrode 341, half; And a second contact electrode 342 is formed on the second (four) diode side, and the first contact electrode 341 and the second connection = 4. 2 are electrically connected to the first semiconductor layer 321 and the second semiconductor, respectively. In addition, the LED device is formed on the electrodes 341, 342, and further includes a step of "connecting the LED device to a heat dissipation earth 35" and applying the package structure in a flip chip form. It is only an example and is not limited to this. Further, referring to Fig. 9, Fig. and Fig. _, a method of manufacturing another light emitting diode device according to a preferred embodiment of the present invention includes steps S1 to S5. Step S1' is to provide a plate body; step S2 is to form at least one hair, the diode element is above the plate body, and the light emitting diode element sequentially comprises: a semiconductor layer, a light emitting layer and a second semiconductor a layer, the first semiconductor layer is formed on the board; in step S3, the substrate is provided

28306-CP 14 200832746 has a surface having a plurality of stepped bumps thereon, the substrate being adhered to the LED component; and in step S5, the panel is removed. In step S1, the material and functional characteristics of the board 30 are as described in the previous embodiment, and therefore will not be described again. In the step S2', the structure, material and arrangement relationship of the LED component 32 are as described in the previous embodiment, and therefore are not described herein.

In the step S3', a substrate 311 having a plurality of step-like bumps 3 13 on the surface is provided. In the embodiment, as shown in FIG. 丨〇a, the substrate 31 has a first surface 3 opposite to each other. And a second surface 312, the stepped bumps 313 are formed on the first surface 3 ιι, and the stepped bumps 313 are formed in the same manner as in the previous embodiment, using photoresist gray scale exposure ( As shown in FIG. 1B, or the photoresist stamping method is formed by etching, and the structural features and arrangement of the stepped bumps 313 are also as described in the previous embodiment, and thus will not be described again. In this embodiment, the substrate 31 is a transparent substrate, and the material thereof is selected from the group consisting of epoxy resin, optical glass, semiconductor, and combinations thereof, wherein the semiconductor system can be mv, Π-Υ! The semiconductor or JV family is semi-conductive in step S4', and the substrate 31 having the step-like bumps 313 is pasted on the light-emitting diode element 32, as shown in FIG. The surface 311 is adhered to the second semiconductor layer 323 of the light-emitting diode element 32. The substrate 31 is adhered to the light-emitting diode element 32 by a light-adhesive layer 33.

28306-CP 200832746 The material of layer 33 is epoxy. In addition, the substrate 31 may have its second surface 312 facing the second semiconductor layer 323 of the LED component 32 and adhered thereto (not shown), so that the stepped bumps 313 are formed on the light-emitting diodes 313. One of the polar body devices is on the light surface. In step S5', the board body 30 is removed by, for example, laser lift-off, and before or after this step, the flip-light diode device may be further included to facilitate the subsequent process steps. . After step S5', a step is further included to remove a portion of the LED component 32. In this embodiment, a portion of the first semiconductor layer 321 and the luminescent layer 322 are removed by, for example, etching. Then, a first contact electrode 341 is formed on one side of the first semiconductor layer 321 and a second contact electrode 342 is formed on the removed portion, and the first contact electrode 341 and the second contact electrode 342 are electrically connected. A semiconductor layer 321 and a second semiconductor layer 323. In this embodiment, after step S5, a step S6 is further included, and the LED device is coupled to a heat dissipation substrate 35 to be applied to the package structure in a flip chip form. Not limited to this. In summary, according to the light-emitting diode device and the clothing k method thereof according to the present invention, a plurality of step-like bumps are formed on one side of the substrate or the plate body, and the step-like bumps are used for adjusting The phase or direction of the light field of the beam emitted by the LED component reaches the function of changing the shape of the light field of the beam or adjusting the intensity distribution of the light field, thereby enabling a plurality of light-emitting diodes

28306-CP 16 200832746 The light-emitting areas of the components do not overlap each other, and the phenomenon of uneven luminous intensity of the prior art is effectively improved. The step-like bumps may be formed on the surface of the substrate or the board, or formed on the bonding interface between the substrate and the light-emitting diode. In addition, the structural design of the class-like bumps can also achieve the purpose of guiding the conventional light ray to make the brown color close to the phenomenon, and achieve the purpose of uniformly illuminating the light-emitting area. Again: the axis: • p, outside the design of the graded bumps 'can also set a suitable lens (lens) on the light path, that is, the 盥氺 日 日 日 铋々 透镜 透镜 透镜 透镜 透镜 透镜 透镜 透镜Putting it in a class-like bump, and between the objects of the first bundle, is used to make the application more extensive. The above is only an example, not a limitation, from the present invention. The spirit and the mouth of the mouth can be removed, and the special effects or modifications of the sputum should be included in the scope of the patent application attached. [Simplified Schematic] Figure 1 is a conventional one. Figure 2A is a schematic diagram of a first pole body I. Figure 2b is a schematic diagram of the figure. Fig. 3A is a schematic diagram of a rabbit light diode device and a light guide plate. Schematic. Intention. X-ray - the representation of the shape of the light field of the polar body device

襄 为 为 为 为 28 28 306 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28

4B to 4DAm/iA L ^ are cross-sectional views of the various bumps of the dotted circle portion in Fig. 4A. $5 is a schematic illustration of another light-emitting diode garment in accordance with a preferred embodiment of the present invention. Figure 6 is a schematic illustration of the shape of a light field of a light emitting diode device in accordance with a preferred embodiment of the present invention. Figure 7 is a flow chart of a light emitting diode device in accordance with a preferred embodiment of the present invention. 8A and 8B are schematic flow charts of a light-emitting diode device according to a preferred embodiment of the present invention. Figure 9 is a flow chart of another light emitting diode device in accordance with a preferred embodiment of the present invention. 10A and 10B are schematic flow charts of another light emitting diode device according to a preferred embodiment of the present invention. DESCRIPTION OF SYMBOLS · 1, 2, 3: Light-emitting diode devices 1〇, 20, 32: Light-emitting diode elements 1G1, 321 : First semiconductor layers 102, 322: Light-emitting layers 103, 323: Second semiconductor layer HM, 341, 341': first contact electrodes 105, 342, 342, · second contact electrode 11: transparent substrate

28306-CP 18 200832746 12 : package unit 21, 31: substrate 22: mirror body 30: plate body 3 11 : first surface 312 : second surface 313 : step-like bump 33 : light-transmissive adhesive layer 34 : electrode pair 35 : heat dissipation substrate 5 : mold core 6 : light guide plate 051 : optical axis 052 : optical axis A, A ' : light-emitting area PR : photoresist layer Μ : masks S1 to S2, S1' to S6, flow: step 28306-CP 19

Claims (1)

200832746 X. Patent application scope: 1. A light-emitting diode device, comprising: a substrate having a first surface and a second surface disposed opposite to each other, the first surface having a plurality of step-like bumps; At least one light emitting diode element is disposed on a side of the substrate. 2. The light emitting diode device of claim 1, wherein the light emitting diode element is coupled to the second surface = the substrate. 3. The light emitting diode device of claim 2, wherein the light emitting diode element is coupled to the substrate facing the first surface. 4. The light-emitting diode device of claim 3, further comprising a light-transmissive adhesive layer for adhering the substrate to the light-emitting diode component. 5. The light-emitting diode device of claim 4, wherein the material of the light-transmitting adhesive layer comprises an epoxy resin. 6. The illuminating diode device of claim 2, wherein the stepped bumps are symmetrically arranged 'asymmetrical or irregularly arranged. 7. The light-emitting diode device of claim 1, wherein the step-like bump has 2n levels, wherein ^ is a positive integer. / ^ Μ 8. The hair & diode device of the patent application scope g 7 $, wherein the class-like bumps are respectively a binary optical bump. The illuminating diode device of claim 8, wherein the stepped bumps each have a flat surface. <10. The light emitting diode device of claim 2, wherein the stepped bumps each have a curved surface. 11. The light emitting diode device of claim 2, wherein the material of the substrate is a light transmissive material. The light-emitting diode device of claim 5, wherein the light-transmitting material is selected from the group consisting of epoxy resin, optical glass, semiconductor, and combinations thereof. 13. The light emitting diode device of claim 1, wherein the material of the substrate comprises tantalum carbide or aluminum oxide. 14. The light-emitting diode of the first application of the patent application scope, further comprising: -it photoconductive layer disposed between the light-emitting diode element and the certain plate. The light-emitting diode device described in claim 14 is wherein the material of the Qianguang conductive layer is selected from the group consisting of indium tin oxide tin oxide, antimony tin oxide, and combinations thereof. Set 16:! The illuminating diode device of claim 1, wherein the illuminating diode device comprises: an electro-optic layer and a second semiconductor layer, wherein the luminescent layer is disposed on the fused conductor layer and Between the second semiconductor layers. Brother + 2: The light-emitting diode package 28306-CP 21 200832746 described in claim 16 includes an electrode of a first contact electrode and a second contact electrode, and the first contact electrode of the 5H is connected to the The first semiconductor layer is coupled to the second semiconductor layer. The light-emitting diode device of claim 1, further comprising: a heat-dissipating substrate coupled to the light-emitting diode element. 19Glowing diode package as claimed in claim 18 The first contact electrode and the second contact electrode are disposed between the light emitting diode element and the heat dissipation substrate. 20. The illuminating diode device according to claim 1, wherein the ray light-polar element generates a light beam, and the step-like bump dies the light field shape of the light beam or the light of the light beam. Field intensity distribution. 21. The light-emitting diode device of claim 2, wherein the light field shape is a triangle, a quadrangle or a polygon. ^ The light-emitting diode according to the second aspect of the patent application, the middle beam is formed from the light-emitting diode element to an illumination object, and a light-emitting path is formed on the light-emitting path. : (lens) hunting to adjust the primaries of the wind beam, so that the illuminating, polar body i is more widely used. Taking a method for manufacturing a light-emitting diode device, comprising: a lower electrode, providing a plate body; forming at least one light-emitting diode element - from the surface of the tenth plate The first pole element includes a first semi-conducting layer of sputum, a luminescent layer and a second semiconductor layer, the first semiconductor layer is formed on the board, providing - The substrate ' has a surface and has a plurality of bumps thereon; the substrate is pasted on the LED component, and the plate body is removed. 24. The manufacturing method according to claim 23, wherein before or after the step of removing the board, the method further comprises the step of: inverting the light emitting diode device. In the manufacturing method of claim 24, after the step of removing the plate, the method further comprises a step of: removing a portion of the light emitting diode element. The manufacturing method of claim 25, wherein the portion of the first semiconductor layer and the light-emitting layer are removed. The manufacturing method according to claim 23, wherein after the step of removing the plate body, the method further comprises: forming a first contact electrode electrically connected to the first semiconductor layer. The manufacturing method according to claim 27, wherein the first contact electrode is formed on the side of the first semiconductor layer. The manufacturing method of claim 25, after the step of removing the portion of the light emitting diode element, further comprising the step of: forming a second contact electrode in the removed portion The contact electrode is electrically connected to the second semiconductor layer. The manufacturing method of claim 23, wherein the step of providing the substrate in the method of 28306-CP 23 200832746 comprises the steps of: forming a photoresist layer on the substrate; The photoresist layer is exposed; and the photoresist layer and a portion of the substrate are removed according to the exposure result to form the stepped bumps. The manufacturing method according to the third aspect of the invention, wherein the step of exposing the photoresist layer through the photomask is a step exposure. 32. The manufacturing method according to claim 23, wherein the step of providing the substrate comprises the steps of: coating a photoresist layer on the substrate; and imprinting the photoresist with a mold. a layer having a reverse pattern of the stepped bumps; removing the mold core; The substrate of the photoresist layer portion is removed according to the step-like bumps of the photoresist layer to form the stepped bumps. 33. The manufacturing method according to claim 32, wherein the embossing method is a soft embossing method or a _ hot embossing method. M = the manufacturing method described in the patent application 帛 23, wherein the substrate is adhered to the light-emitting diode card 35 by a light-transmissive adhesive layer, as described in claim 34 of the patent scope, § The material of the light transmissive adhesive layer includes epoxy resin. 36. The manufacturing method of claim 23, wherein the class-like bumps are arranged in a symmetric arrangement of 'asymmetrical arrangement or irregularity 28306-CP 24 200832746. 37. The method of claim 23, wherein the step-like bump has 2n levels, wherein: the system is a positive integer. 38. The method of claim 37, wherein the stepped bumps are respectively a binary optical bump. 39. The method of manufacture of claim 4, wherein the stepped bumps each have a flat surface. 40. The method of manufacture of claim 23, wherein the stepped bumps each have a curved surface. 41. The manufacturing method according to claim 23, wherein the material of the plate body comprises carbon stone or oxidized. 42. The method of manufacture of claim 23, wherein the method of claim 23, wherein. The material of the substrate is selected from the group consisting of epoxy resin, optical glass, semiconductor, and combinations thereof. 43. The manufacturing method according to Item 23, wherein the removing the plate further comprises the step of: connecting the light emitting diode device to the heat dissipating substrate. 44. A method of fabricating a light-emitting diode device, comprising the steps of: providing a plate body having a surface and having a plurality of stepped bumps thereon; and: forming at least one light emitting diode element on the plate Above the body, the light emitting body element sequentially includes a first conductor layer, a light emitting layer and a 28306-CP 25 200832746 semiconductor layer, and the first semiconductor layer is formed on the board. 45. The method of claim 44, wherein after forming the light emitting diode element on the board, the method further comprises the step of: removing a portion of the light emitting diode element. The manufacturing method according to claim 44, wherein the second semiconductor layer and the light-emitting layer are removed. 47. The manufacturing method of claim 44, wherein the step of arranging the LED component of the private boring tool further comprises: forming a first contact electrode on the removed portion, and The first contact electrode is electrically connected to the first semiconductor layer. 48. The manufacturing method of claim 1, wherein after the step of forming the bismuth illuminating diode element on the board, the method further comprises: forming a second contact electrode electrically connected to the second contact electrode The second semiconductor layer. The manufacturing method according to claim 48, wherein the second contact electrode is formed on a side of the second semiconductor layer. 5. The method of manufacturing the method of claim 44, wherein the step of providing the plate comprises the steps of: forming a photoresist layer on the plate; and passing the photoresist layer through a mask The daylight exposure is performed, and the photoresist layer and a portion of the plate body are removed according to the exposure result, and the shape-like bumps are formed by the shape 28306-CP 26 200832746. The manufacturing method according to claim 5, wherein the step of exposing the photoresist layer through the photomask is a gray scale exposure. 52. The manufacturing method according to claim 44, wherein the step of providing the plate comprises the steps of: coating a photoresist layer on the plate; and imprinting the bar with a barley a photoresist layer having a reverse pattern of the stepped bumps; removing the mold core; and removing the photoresist layer and the portion according to the stepped bumps of the photoresist layer a plate body to form the stepped bumps. 53. The manufacturing method according to claim 52, wherein the embossing method is a soft imprinting method or a _ hot imprinting method. / 54. The manufacturing method according to claim 44, wherein the class-like bumps are in a symmetric arrangement, an asymmetric arrangement or an irregularity, and the layer thereof, wherein the η system is a positive 55, as in the patent application scope 44, the class-like bump has 2n orders 0 T. The manufacturing method described in Item 55 is a two-step bump system. Meta-optical bumps. ▲ 57. If the application is specified in (4) (4)% of the manufacturing, the class-like bumps have a flat table.制造 28306-CP 27 200832746 58. The method of manufacture of claim 1, wherein the stepped bumps each have a curved surface. 59. The manufacturing method according to claim 44, wherein the material of the plate body comprises tantalum carbide or aluminum oxide. 60. The manufacturing method of claim 44, wherein after the step of forming the LED component on the board, the method further comprises the step of: connecting the LED device to a heat dissipating substrate . 28306-CP 28