TW200826190A - Plasma processing apparatus - Google Patents

Abstract

A plasma processing apparatus including a chamber and an insulating member disposed in an upper portion of the chamber, a ground electrode formed at a side wall of the chamber and applying by a ground potential, and a lower electrode disposed at a lower portion of the chamber, and a substrate placed on the lower electrode, wherein the lower electrode is divided into a plurality of electrodes. According to an embodiment of the invention, the plasma generated by the plasma processing apparatus removes efficiently particles accumulated on edge area of the upper surface, the side, and the edge area of the lower surface of the substrate.

Description

200826190 26417pif.doc IX. Description of the invention: [Technical field to which the invention pertains] It is used in a plasma processing apparatus, in particular, a plasma processing apparatus of [2= kinds of impurities. The semiconductor element and the flat panel display the crying film and form a thin film on the substrate by forming a multi-layer 溥 to form I right: ί ]. That is, by using the following pattern: 4 in the 图案 pattern of the forest: on the pre-money field of the substrate and the main line etches the film 'and then by using the etching mask to make a reservation ^ remove the substrate towel - County _. Cheng's money = 1 film is deposited on the entire substrate, while the side of the X-head "is a 邱 八 中心 中心 中心 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The material is removed, and in the side process the continuation plate is usually in the edge region of the plate. In addition, due to the base support, it is seated on the substrate carrier due to the & The substrate carriers are spaced apart from each other by a predetermined distance, so that the entire back surface i is formed such that the particles and the film are also accumulated on the substrate, and the particles and the film accumulated on the substrate are continued to continue the plate alignment. The soil plate may be deformed, or it may become difficult to apply the basic method. Zhan 1^, the material of the sorrow and the thin film of the age of the film and the thin film of the film have been in the field of people's ΐ 疋 疋The particles on the surface of the 200826190 26417pif.doc substrate are removed by immersing the substrate in a spray or rinse solution. The method of dry etching is to remove the particles by etching the surface of the substrate with a plasma. The wet surface engraving method is generally used to remove the surface area of the substrate, however, since it is difficult to control the paste, it is difficult to remove the particles in the edge region. In addition, the wet etching process uses a large amount of chemicals, which increases the cost of the process and causes many environmental problems, such as disposal of chemical waste. On the contrary, the dry side method can use the electrical equipment to remove the particles and thin films accumulated around the edge of the substrate, and can avoid the disadvantages of the etching method. Therefore, in recent years, an apparatus for exposing and etching only the edge region of a substrate has been developed. In the related art, a % slurry|slurry device for etching an edge region of a substrate using a plasma as described above has been disclosed in Korean Patent Registration Nos. (10)" (10) and 10-0442194. Root 1 in Korean Patent Registration No. The device disclosed in 1〇_〇433〇8 has a diameter smaller than the substrate, and the distance between the platform and the insulator is set to be smaller than the distance between the cathode ring and the anode ring. The cathode ring and the anode ring are respectively fixed to the platform and the insulator. In more detail, the anode ring is mounted around the 1] circumference of the insulator. Further, the observation ring is coaxially fixed to the circumference of the anode ring to fix the edge of the observation ring close to the cathode ring. Therefore, the circumference of the platform is obtained. Masking, but there is a predetermined inter-cRF output terminal connected to the cathode ring between the platform and the cathode ring. In the above configuration, the cathode ring and the = pole are respectively mounted around the circumference of the platform and the insulator. The diameter of the platform and the insulator is smaller than that of the substrate. Diameter. Moreover, plasma is generated by discharging between the cathode ring and the anode ring. In addition, the observation ring is mounted around the cathode ring, 200826190 26417pif.d Oc so that the plexite or even this % is applied to the edge region of the lower surface of the substrate. Therefore, the use of plasma can effectively etch the edge region of the lower surface of the substrate. Ο In Korean Patent Registration No. _0 442 194, a pair is used for The field substrate performs electrodes on the dry side, that is, the first electrode and the second electrode. The first electrode and the second electrode face each other, and impurities on the edge region of the substrate are removed by generating electricity. The first electrode includes a protruding end and a first protruding portion. The first protruding end and the first protruding portion are clear and face the upper side and the lower side of the substrate edge. The second electrode includes a second protruding end and a second convex portion The second protruding end and the second protruding portion have the same size as the first protruding end and the first protruding portion, and the other side facing the upper and lower portions of the edge of the substrate. And the respective 'bee' accumulated on the lower surface of the edge region, not to mention the removal of impurities accumulated on the upper surface. However, in the above configuration of the related art, it is to be smaller than the substrate carrier 4 of the substrate. ^ 吴Π's - part of the age, thereby removing the accumulation == area However, in the above-mentioned microparticles disposed between the substrate holder and the substrate, the present invention provides a plasma processing apparatus having a substrate upper surface edge region, a side surface, and a lower surface. Micro: political, in addition to removing the particles accumulated in the lower surface of the substrate / the area of the particles / and energy ... According to one aspect of the invention, the plasma is processed to be placed in the upper part of the chamber Insulating member: 匕: cavity, a ground electrode formed at a sidewall of the chamber 200826190 26417pif.doc, having a ground potential applied to the ground electrode; and being disposed at a lower portion of the chamber a lower electrode, and a substrate is placed on the lower 4 electrode, wherein the lower electrode is divided into a plurality of electrodes. The plurality of electrodes include an inner electrode and an outer electrode, and the inner electrode and the outer electrode are coaxial with each other. A lifting member for moving the lower electric unit up and down is further provided below the lower electrode. Alternatively, the lifting member can move the inner electrode and the outer electrode up and down. Further, a V electrode may be formed between the insulating member and the inner side of the chamber. A gas supply gas is formed in the ground electrode, and a gas supply source can be connected to the gas supply passage. The electrode 'and may further comprise another for moving up and down. $Upper lifting parts. The outer electrode is provided by the electrode holder =' more providing a focus ring surrounding the outer side of the outer electrode, and an orifice plate may be provided between the beta coke ring and the inner wall of the chamber. Li forms a gas injection hole in the plurality of electrodes, and the gas injection hole may be formed on an outer side of the inner electrode and an inner side of the outer electrode. An intermediate electrode is further provided between the =electrode and the outer electrode, and the gas injection hole can be further formed on the inner side and the outer side of the intermediate electrode. The intermediate electrode may be further included between the inner electrode and the outer electrode. The intermediate electrode can be between 56% and 7G% of the diameter of the outer electrode. The straightness of the inner electrode can be between 40% and 56% of the diameter of the outer electrode. The diameter of the inner electrode is between 120 mm and 170 mm, and the diameter of the middle electrode can be between =〇mm; and the diameter of the outer electrode can be between the distance between the inner electrode and the middle electrode of the training (8) face 3 and the middle The distance between the electrode and the outer electrode of 200826190 26417pif.doc can be between 0.1 and 10 mm. The outer insulating member and the outer insulating member are respectively included on the outer circumference of the member. TM, department; margin;:==== painful mouth. The main surface of the inner insulating member can be further provided with a main body 2: a surface of the r (four) surface is formed by inserting a ring into the lower concave body to be connected with the lower groove, 1^ The preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. Iron = The invention is not limited to the embodiments described herein, but may also be: <===/ These embodiments are provided merely to fully convey the various aspects of the invention. At σ, the same McCaw number is used to indicate the same component. The cross-sectional view of the plasma portion of the first exemplary embodiment is in the first exemplary embodiment according to the present invention. Figure:::=== form of the three-dimensional: Figure 4 is a cross-sectional view of the first variation of the provision of the insulating member according to the V example of the present invention, which is provided in the electrical equipment of the second embodiment. Fig. 6 is a perspective view of the rear portion of the gas injection shown in Fig. 5. Fig. 7 is an exploded perspective view of the lower electrode of the invention of the invention of the first embodiment of the invention, 200826190 26417pif.doc. The circumstance of the fourth embodiment of the substrate on the lower and lower surfaces of the substrate is shown in the following section. FIG. 2 is a variation of the electric branch according to the first exemplary embodiment of the present invention. The electrothermal processing equipment of the ship's embodiment uses the anti-employment '(4) sub-remaining ("RIE"), including two, placed on the upper part of the chamber (10), on both sides D, Μ, in the cavity to 100 The upper portion of the side wall; the lower electrode 400, on which the substrate G is placed; and the lifting member 5'', which moves the lower electrode 400. ^ The chamber 100 is made by surface anodizing. The chamber contains the lower chamber The chamber lGGa and the chamber cover are secret, and the chamber cover just b covers the upper part of the lower chamber 100a. The lower chamber 100 is formed into a column shape having a top portion. The shape of the lower chamber theory may vary depending on the shape of the semiconductor wafer or the glass substrate. The chamber cover 封闭 closes the upper portion of the lower chamber 丨〇〇 &amp; And airtightly contacting the upper portion of the lower chamber 1a to form a predetermined space in the chamber 100. The gas supply passage 110 is formed in the upper portion of the chamber 1 。. Gas supply: channel 1GQ ? The upper wall of the chamber 1 (10) sends the reverse seam and is connected to the money supply source 120. Therefore, the reaction gas is allowed to flow from the gas supply source 12 through the gas supply itit 11G to the chamber t. The reverse seam may be

One of Ar, CF4, C12, SF6, BC13, and combinations thereof. A gate 13A is formed on the sidewall of the chamber 1 to carry the substrate G into the chamber 1 through it. When the gate 130 is opened/closed, the substrate G is loaded into the chamber 1 or taken out from the 11 200826190 26417 pif.doc chamber 100. In the above, a gate 130 is formed on the side wall of the chamber 100. However, it is also possible to form another gate on the other side wall of the chamber 1 facing the gate 13A. That is, the substrate G can be inserted through one idle before being processed, and taken out through another gate after the process. An exhaust pipe 140 is provided at the bottom of the chamber \100. Reaction by-products (for example, particles generated in the etching process 1) and gas are discharged outside the reaction chamber via the exhaust pipe 140. An exhaust pipe 140 may be formed at a lower portion of the side wall of the chamber 100 and at the bottom of the chamber 100 f). The insulating member 200 is disposed in the upper portion of the chamber 1 (i.e., on the lower surface of the chamber cover 1b) to have a circular plate shape. The insulating member 2 (8) uniformly distributes the generated sizing in the chamber 100 around the substrate G and protects the inner upper wall of the chamber = 〇. A cooling line 21A is provided in the insulating member 2'', and the cooling g-line 210 is used to adjust the temperature of the insulating member 2''''''''''' Therefore, the cooling water is supplied from the cooling water supply source to the cold: g line 210. The cooling water is used to prevent the generation of the kiss insulating member 2GG in the chamber 1〇〇. A coating material such as a peach is coated on the lower surface side of the insulating member to prevent particles generated in the chamber 10 from adhering to the edges and side walls. 2〇0 ^ Edge ^, / fine Insulation parts can also be divided into multiple pieces. Referring to Figures 2 and 3, the insulating member 2A may include an inner insulating member 及 and an outer insulating member 2_, and an outer insulating member 2 (8) to an outer circumference of the inner peripheral member 20A. ^ The main rim, the inner edge member 20 〇a is formed in a circular plate shape. A 苐-step 2Q2 having an L-shaped cross section is formed around the circumference of the inner insulating member 12 200826190 26417pif.doc 2 . The outer 2QQb lion is in the shape of a ring with a through hole at the middle*. The inner edge of the outer t-attachment 2_ is formed - having an inverted second stage. 卩6 〇4' corresponds to the first stage P 202 formed around the circumference of the inner insulating member 200a. The outer insulating member Μ is joined to the inner insulating member from above. In more detail, the second step 2〇4 of the outer insulating member 2GGb is placed on the first step 2〇2 of the inner insulating member 2〇〇a so that the inner edge of the inner member 2〇〇a is outside the standard Insulation member 200b. The inner insulating member 200a for supporting the outer insulating member b is fastened to the lower surface of the chamber cover 100b by a fastening member such as a screw. Thereby, the insulating member 2 (8) is fixed to the lower surface of the chamber cover ι_. The first step 2〇2 and the second step 2〇4 are not limited to the above-described shape, and may be changed to any shape as long as the outer side of the inner insulating member 200a can completely face the inner side of the outer insulating member 鸠. According to the above configuration, the lower surface and the side surface of the outer insulating member 2〇〇b are insulated and prevented from adhering, compared with the conventional insulating member coated with the coating material over the entire surface. This can reduce the manufacturing cost three, depending on the size of the insulating member 2 to be mounted in the chamber 100, and can be replaced with different outer insulating members having different sizes such as (10). The insulating member 200 may have a configuration such that it is always fixed to the same position of the lower surface of the chamber, 100b. As shown in Figure 4, it is intrinsic, 彖. A predetermined groove 2〇6 is formed on the upper surface of the jaw member 200a, and the white portion is projected from the lower surface of the chamber cover leg. The formed concave portion 206 and the convex portion 丨〇2 have a circular curved shape. The 2〇〇a ^® 10〇b ^ member 2GG of the inner insulating member 200 that will be used to support the outer insulation 13 Γ ί. 200826190 26417pif.doc component 200b is always in the same position as the lower surface of the chamber cover leg, thereby Can save setup time. In the above configuration, the groove 206 is convex and untwisted, and θ, = and the chamber cover _ are formed to have =:= absolutely: : and == are limited thereto. That is, a plurality of protrusions may be separately formed; and this is arranged in a substantially circular curve shape. The r warfare forms a plurality of raised portions and corresponding grooves. Moreover, the terminology is formed on the inner insulating member, and the lower surface of the chamber cover, however, also on the edge member 2_, and the pre-center groove is formed in the chamber cover _ II ΐ. Further, although in the above configuration, the boss portion 1Q2 is shaped like a cavity to the lower surface of the cover 100b, it is also possible to sandwich a person between the chamber cover member, the bar, and the member 200 (not Show) and form a raised portion on the lower surface of the board to assemble it together. The insulating member may have a configuration to reduce the temperature of the substrate/surface during processing. As shown in Figs. 5 and 6, the inner insulating member 2_ is formed in the shape of an annular plate, and the gas injection ring 2〇9 is provided on the lower surface of the inner insulating portion 1 cow 20〇a. Further, the outer insulating member 2 is coupled to the outer side of the inner insulating member 20a. The inner insulating member 200a and the outer insulating member 2'b, which are assembled together as described above, are then fixed to the lower surface of the chamber cover 1b. 14 f

200826190 26417pif.doc A lower groove 207 having a ring shape is formed on the lower surface of the inner insulating member 2a. The gas line 208 is formed through the inner insulating member 200a to communicate with the lower groove 207. The gas line 208 is formed through the chamber cover 101b to communicate with the chamber cover i00b that fixes the inner insulating member 2A. A cooling gas, such as helium, may be provided via gas line 208. The gas injection ring 209 is fitted into the lower groove 2〇7 on the lower surface of the inner insulating member 2〇〇a. The gas entanglement ring 209 is formed in an annular shape having a vertical center slit, and includes a plurality of injection holes 209a formed along the lower surface. The plurality of injection holes 209a are connectable to the gas line 208 of the inner insulating member 200a. Further, the shape of the / main entrance hole 209a is not limited thereto, but may be a circular shape, a polygonal shape or the like. After the start of the process, the plasma is generated around the lower surface of the substrate, and the Q gas is injected into the upper surface of the substrate via the chamber cover 1b and the inner insulating member 2〇〇a. In this way, the plasma can be prevented from raising the temperature of the substrate. According to the above configuration, it is possible to prevent the substrate from being deformed due to an increase in the temperature of the domain due to the plasma during the substrate processing. Although the insulating member 冷却 is cooled by the two = 卩 g line, the cooling effect in a vacuum environment is better because there is no heat transfer medium between the substrate and the insulating member. Therefore, this configuration of the hunting and the rim components can more effectively adjust the substrate temperature. Returning to Fig. 1, the ground electrode 300 is disposed at an upper portion of the side wall of the chamber 100 to form an annular shape. The ground electrode 3 (8) includes an inner pole 310 and an outer electrode 320 that are grounded, respectively. ^ The upper portion of the electrode crucible is connected to the upper wall of the through chamber 10Q to form 1, and should be forced 110. And a predetermined space is formed in the inner electrode 31〇 15 200826190 26417pif.doc 314. Further, a plurality of gas injection tabs 312 are formed on one side of the side wall of the inner electrode 31a to be connected to the predetermined space 314. The reaction gas is supplied to a predetermined space 314 formed in the inner electrode 310 via a gas supply passage 11 formed through the upper wall of the chamber 100. The reaction gas supplied to the space 314 is introduced into the chamber 1GG via a gas injection nozzle 形成 formed on the side wall of the inner electrode 31 (). The outer electrode 32Q is formed on the upper portion of the side wall of the chamber 1QQ and more specifically, S is formed to be adjacent to the lower surface of the inner electrode 31A. At the beginning of the process, the edge regions of the substrate G, and more particularly the upper surface edge regions, side faces, and lower surface edge regions of the substrate, are placed adjacent to the electrodes. That is, the inner electrode 3 〇 and the outer electrode 320 of the electrode are placed adjacent to the edge region of the substrate G to be laterally accumulated on the upper surface edge region of the substrate G, _, and the lower = edge region. Micro ♦ and film. The inner electrode 31 and the outer electrode may be formed as a single electrode, and a dielectric film may be formed on the inner electrode and the outer electrode such as the surface to protect the electrodes 31, 32. The scooping m pole 400 is disposed in a lower portion of the chamber 100. The lower electrode 400 = the music electrode 410 and the second electrode 42A surrounding the first electrode 41A. :丄: The electrode 4〇0 is connected to the RF power supply (not shown) to supply power down. Further, (4) κκ, &amp; matching device (not shown) of the lower electrode 400 and the RF power source. A good matching device is used to detect the impedance in 00, and generate an imaginary component, the imaginary component having the opposite phase; and the resultant impedance and the impedance of the real phase. The 'RF matching device then provides the maximum power and thereby produces the best power in the cavity 16 200826190 26417pif.doc to 100. The lower electrode shed can be formed into a circular edging shape, which is determined by the substrate plate of the semiconductor (four) qing dynasty. The lower electrode 400 will be described in detail in the appended text with reference to the accompanying drawings. A chuck (not shown) for supporting the substrate G may be provided between the first electrode 410 and the second electrode. The loss can be a static emperor chuck using static electricity. The seam can be made to force and support the substrate G. In addition, a cooling line 440 may be further provided in the first electrode and the second electrode to be cooled to a cooling f_cooling water supply source (not shown) for adjusting the temperature of the first electrode 41〇 and the second electrode 42〇. The outer portion may further provide a helium gas line (not shown) by the first electrode 41 and the second electrode. The helium gas is supplied via the helium gas line from the temperature of the substrate G. The lifting member 500 includes a first lower elevator 510 and a second lower elevator 520' and is coupled to the lower electrode 4''. The first lower lifter is coupled to the first electrode 41'' and the second lower lifter 52'' is coupled to the electrode 420. The first lower elevator 510 and the second lower elevator 520 each include a frame and a bellows 5! 4 connected to the bracket. The first lower lift 51 〇 and the second lower lift 52 〇 form a lift assembly: a stepping motor (ste卯ing m〇t〇r) 53〇 is connected to the lift assembly, and the first lower lift 51〇 and the second lower elevator 52〇 stepper motor 530 move up and down. In more detail, when the first lower=down 510 moves upward, the second lower elevator 51 moves downward; phase 17 200826190 26417pif.doc lin 51. When the second Ϊ&quot;~ Γ machine' 520 moves up, the first lower lift

The branches are private, this is similar to the seesaw. In _Lit with It H. And the lift 52. = ^, 々 is the same as % for control. However, the lower elevator 520 can also be controlled separately. Soaring (4) Training and Brother 2 Lifting parts 5GG is not limited to the use of Erqisaki Ο Electric: Two-phase W ^ can also be used in combination. The scoop is shown in Fig. 7 'in accordance with an exemplary embodiment of the present invention, each ===electrode 400 comprises a circular plate shape ^ 3 , a "first electrode") and a ring outer electrode is a second electrode, 42 〇) Shi Buwen called it:: set. ======= of the second electrode; the electric form is formed as _:= the first electrode 410 passes through the annular shape of the first-port 422. Only the opening of the 42-inch pole is 4??, the outer side of the electrode does not affect the outer side of the second electrode and the second inner side of the second electrode.

Wmm to 1〇111111. The spacing of the sides may be described hereinafter with reference to Figures 8 through 11 for a method of arranging particles and films on the upper edge region of the substrate, the side two operating domains, and the central portion. The lower surface edge region is as shown in the FIG. 8 towel, and the first substrate 41 is placed on the outer pole 1 〇 18 26 18 200826190 26417 pif. doc, and the first step is connected to the lower portion of the first electrode 41 via the stepping motor 530. The lower lift 51 is so as to be spaced apart from the insulating member 2 in the upper portion of the chamber 1 by a predetermined distance. The reaction gas passes through the fUr chamber to the gas supply passage 11G in the cover, from the gas supply source ki, to the space 314 of the inner electrode 310, and then passes through the gas injection nozzle on the side of the inner electrode 310 as shown in FIG. 312 flows into chamber 110. RF is applied to the first electrode 410 to the inner electrode 310, the outer electrode 320, and the second electrode 42. Thus, the electric water in the chamber 100 is generated from the inner electrode 310 to which the ground potential is applied by the first electrode 41G. In the space surrounded by the outer electrode 32G and the second electrode, in more detail, it is generated in a space surrounding the upper surface edge region, the side surface, and the lower surface edge region of the substrate G. Since the distance between the insulating member and the central portion of the upper surface of the base anti-G is kept as a workman's below _ will not be in its occupational plasma p. Therefore, as described above, the twin plasma P can remove particles and films accumulated on the upper surface edge region 2, the side surface, and the lower surface edge region of the substrate G. As shown in FIG. 10, the substrate G is placed on the first electrode, and the lower electrode 530 is moved downwardly from the lower motor 530 to the first electrode 410, and is connected to the second. The second=part lift 520 of the electrode 420 is moved upward. Then, the lower surface =, '' region of the substrate g is placed on the second electrode tip that moves upward. The second electrode is moved at a slight distance from the insulating member in the chamber. The reaction gas flows into the inner portion from the gas supply passage 110 in the chamber cover 100b connected to the gas supply source 12, 19 Ο υ 200826190 26417pif.doc in the upper portion of the chamber 10 (10). Then, as shown in Fig. 11, the reaction gas flows into the chamber 丨 (8) via the gas injection nozzle 312 on one side of the inner electrode 310. The internal potential, the external electrode 32A and the first electrode 41A apply a ground potential, and the second pair of electrodes 420 apply rf to generate a plasma p. The plasma p is generated in a space from the second electrode 42 to which RF is applied, the inner electrode 310 to which the ground potential is applied, the outer electrode 32 and the first electrode, and, more specifically, The space surrounding the upper surface of the substrate G = the edge region, the side surface, and the lower surface edge region. Since the distance between the insulating member and the central portion of the upper surface of the substrate is kept below or below, no plasma P is generated therebetween. Therefore, the granule P produced as described above can remove the particles and the film accumulated on the edge region, the side surface, and the edge portion of the lower surface of the upper surface of the substrate G. ☆ Since the area of the first electrode 41 is smaller than that of the conventional lower electrode, a separate lifting member is not required. The conventional lower electrode is provided with a separate lifting member for supporting the substrate. That is, when the substrate is inserted into the chamber by the external robot arm, the lifting jack disposed in the lower electrode moves upward and the substrate is placed on the lifting ram. Then, when the lifting ejector is moved downward, the substrate on the lifting ejector is placed on the lower electrode. In contrast, according to an exemplary embodiment of the present invention, when the substrate G is inserted into the chamber 1 by an external mechanical arm (not shown), the first electrode 41 can support the substrate without disturbing the robot arm. The lower part of G. Therefore, according to an exemplary embodiment of the present invention, the substrate G can be placed on the first electrode 410 without a separate lifting jack. 20 200826190 26417pif.doc and the second tube, including the inner electrode of the first electrode 410 and the outermost f and the first one is not the only one. That is, the inner electrode can be further provided between the r electrodes as in the side of the Χ Χ region (in the following, the two SIHs include the inter-electrode in the shape of a plate (hereinafter, ^ is 2 - the electrode 41G), in the ring shape The electrode (hereinafter referred to as 7 poles, and) and the outer ring of the ring are arranged by the ground. The second Tie Di electrode 430). Each electrode is separated by a predetermined distance. The inner circumference is spaced apart from the outer circumference of the first electrode 41G by a predetermined distance: the inner circumference of the electrode is at a predetermined distance from the outer first electrode 41 of the second electrode 420 at a predetermined distance. The outer circumference of the inner circumferential electrode which is disposed at a distance from the inner circumference of the second electrode 42G is disposed at a distance from the third electric power at the substrate. The pole flows into the chamber - the electrode 410 and the reactive gas moves upward through the insulating member in the internal power to the upper portion of the chamber RF and at a distance from the inner electrode. A ground potential is applied to the first electrode 410. The #1 pole, the second electrode 420, and the third electrode 430, that is, on the upper side of the substrate G, 'between the second electrode 410 and the ground potential, generate electricity, the edge region, the side surface, and the lower surface edge region. . The water is removed by the plasma and the particles accumulated on it are as thin as the second, and the second distance is stopped 2Q and moved upwards, and a pre-pole, outer electrode, and third electrode are placed on the edge member. Rf is applied to the second electrode, and a ground potential is applied to the inner package 410 and the third electrode 430. 21 200826190 26417pif.doc © This, in the first independent grounding Thunder H-day - fixed distance and in the touch. The pole, the outer electrode, the first electrode 4I0:; 4: =? F, and the internal ^ f, slurry shift Except for the particles and the film accumulated on the upper surface edge region of the substrate 6 "3 = in the surface to the portion. -, the following table describes the second electrode 420 and the second electrode 43 when the first electrode 410 moves upward. When the power is turned down, the first electrode 410 and the third electrode are in two directions; when the electrode 4 (4) is moved upward, the first electrode 41G^ the first electrode is three =; =, the present invention is not limited thereto. That is, the downward movement: while the first electrode 41〇 and the third electrode move upward by 2. When the Tiandi electrode 42〇 moves upward, the first electrode and the third system 430 move downward. 'According to the process, the first to the thirth:: (4) 20 and can move up and down respectively or 7 彼此 in combination with each other. / ^ ^ pole diameter Β can be between the third electrode of the new (10) 56% to 70% dry The diameter a of the first electrode may be in the range of H to Na. In addition, the distance between the first electrode and the second electrode 2 (four) and between the second electrode 420 and the third electrode In the range 〇.1 shaft to 10mm, to avoid the respective upper and lower electrodes 22 Γ

L 200826190 26417pif.doc There is interference between the boundaries. Therefore, the diameters Α, B, and C of the first to third electrodes can be appropriately changed. For example, for a substrate having a diameter of 300 mm, the diameter c of the formed third electrode can be made equal to or smaller than the diameter of the substrate, i.e., 3 〇〇 or less. The diameter B of the formed second electrode is made to be in the range of 56% to 70% of the diameter C of the third electrode, i.e., 17 〇 mm to 21 〇 blood. The diameter A of the formed first electrode is in the range of 49% to 56% of the diameter c of the third electrode, i.e., 120 (five) to 17 〇 mm. When the first to second electrodes 410, 420, and 430 are used to process a substrate having a diameter of 3 mm, the particles and films accumulated on the upper surface edge region, the side surface, and the central portion of the lower surface of the substrate can be removed without The substrate is deformed, wherein the second electrode 42 is moved downward when the first electrode 410 and the third electrode 430 are moved upward; when the second electrode 420 is moved upward, the first electrode 4 and the third electrode 43G are downward. Moving; and the first to third electrodes have an appropriate diameter within the above range. Specifically, in an experiment in which the diameter c of the third electrode was fixed to 300 mm or less and the diameters A and B of the formed first and second electrodes were out of the above range, it was found that in all experiments, the base was found. The central part of the , is deformed upwards. Thus, when the plasma processing apparatus including the first to second electrodes 410, 420, and 430 is used to process the substrate having a direct 俨 300 mm, the diameters of the first to third electrodes are eight, six, and ^ = to the off. Important factor.疋 Once this, power can be applied to each electrode as described below. As shown in Fig. 13, the first to third electrodes 410, 420, and 43 are coaxially spaced apart from each other by a distance ' and provide power between the first electrode 41 and the third electrode. 200826190 26417pif.doc. The RF power source 45 is connected to the egg four-distribution device, the pole and the lower portion of the second electrode. Further, a sensor 47 is provided between 6〇 and the first electrode and between (4) the fitting ί460== pole 420. , the first electric power splitter 480 is connected between the first electrodes. The power distribution is applied to the first 430 attenuation, that is, when the third electrode 43A is applied with H = 〇 power to attenuate the power of the private pole 410. For example, = 2 = (4) a variable resistor or the like, and preferably 2 = a power of the quaternary power divider _ for the application to the first electrode 410 = a power applied to the third electrode 430, 2: here. The power splitter can also be applied to the first-order limit amplification and then to the third electrode 43:, the work can be applied to the first electrode 41 and the adapter gamma, wood - The frequency of the electrode 430 is controlled, and the electrical equipment generated around the substrate G is controlled. The edge of the deformed surface of the substrate G during processing can be prevented: the engraving uniformity of the edge region and the central portion.冋 土 土 土 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在The sensor and the second are supplied and then assigned to the first electrode. The gas of the detected power is further injected by the external transposition to the kiss /, as described below. As shown in Fig. 14, the lower portion 24 200826190 26417pif.doc portion electrode 400 includes a first electrode 410 and a second electrode 42A, wherein the second electrode 420 is coaxially disposed at a predetermined distance from the first electrode 41A. The first electrode 410 is formed in a disk shape, and a plurality of first gas injection holes 412 are formed along the outer circumference of the first electrode 41''. Further, the first gas supply line 414 is connected to the lower portion of the electrode 410. A predetermined space (not shown) is formed in the first electrode; the pole 41, and a plurality of gas-filled holes 412 are formed along the outer circumference of the first electrode 41'' to communicate with the predetermined space. The first gas supply line 414 is also connected to a predetermined space in the first electrode 41A. Therefore, the reaction gas supplied via the gas supply line 414 passes through a predetermined space in the first electrode 410, and is then injected into the reaction chamber via the first gas injection hole 412 formed along the outer circumference of the first electrode 410. . The second electrode 420 is formed in a ring shape such that its inner circumference is spaced apart from the outer circumference of the first electrode 410 by a predetermined distance. The first electrode 41'' is disposed coaxially with the second electrode 420. A plurality of gas injection holes 424 are formed along the inner circumference of the second electrode 420. Further, a second gas supply line 426 is connected to a lower portion of the second electrode 420. Similar to the first electrode 410, a predetermined space (not shown) communicating with the second gas injection hole 424 is also formed in the second electrode 42A. The predetermined space is in communication with the second gas supply line. Therefore, the reaction gas supplied via the second gas supply line 426 passes through the space in the annular second electrode 420 and is then injected into the reaction chamber through the second gas injection hole 424. When the substrate is placed on the first electrode 410 and then separated from the insulating member in the upper portion of the chamber by a predetermined distance, the first gas injection hole 412 formed along the outer circumference of the first electrode 41 is uniformly injected. Reaction gas 200826190 26417pif.doc = The injected reaction gas is evenly distributed along the edge region of the lower surface of the substrate: plasma can be uniformly generated. Ah, when the substrate is placed on the second = to - Q, then the insulating member is spaced apart from the insulating member in the upper portion of the chamber: two t: the second gas injection r L formed by the inner circumference of the second electrode 420 In the second place, the main reaction gas is introduced. The injected reaction gas surrounds the substrate

The surface and the area are evenly distributed, so that the electricity can be uniformly generated. The plasma is controlled by the first and second gas injections 412L412 and 424, and the plasma is controlled to control the plasma (four) degrees. Therefore, the accumulated particles and films can be more effectively removed. The renting virtual A and second gas injection holes 412 and 424 may be connected to one gas; they may be connected to respective gas supply lines by an official line or separately. A heating member (not shown), such as a heated state, may be further provided in the first electric = 410f second electrode 420 for heating the first electrode 410 and the second electrode 420. In the configuration of the upper electrode, the reaction gas is supplied to the first and second electrodes 420 and 420 in the lower portion of the chamber, and thus the lower surface of the substrate is effectively removed at any position regardless of the position of the substrate G. When the lower electrode of the accumulated field field contains at least three electrodes, it can be opened as described below; As shown in FIG. 15, the lower electrode 400 is formed to have a circular shape 43:. t includes a first electrode 410, a second electrode 420, and a third electrode. The second electrode is provided with a first gas injection hole 412 along its outer circumference. The first drain 420 is formed to have a ring shape and the coaxially disposed electrode 410 is immersed from ^ ~ ^ at a predetermined distance from the circumference. A second gas injection hole 424 is formed along the inner circumference of the second electrode 420. The third electrode is formed as a 珲 26 200826190 26417pif.doc The outer circumference of the bungee is coaxially disposed at a distance from the ______ f _____. The third gas injection hole 432 is formed along the inner circumference of the third electrode 420. The configuration of the first electrode 410 and the third electrode 430 is the same as that shown in 11, and thus will not be described.

C 〇 The second electrode 420 is formed in an annular shape having a vertical center slit. The inner diameter is determined such that the first electrode 41A can be inserted, and the outer diameter is determined such that the second electrode 420 can be inserted into the third electrode 430. A second gas injection hole 424 that communicates with each other is formed along the inner circumference and the outer circumference of the second electrode 420. A gas supply line 426 is connected to the lower portion of the second electrode 42A to communicate with the second gas, the inlet 424. In the above configuration, the second gas injection holes 424 are formed to be connected to each other along the inner circumference and the outer circumference of the second electrode 42A, but these gas injection holes may be formed independently. When the substrate is placed on the second electrode 42A and then disposed at a predetermined distance from the upper portion of the chamber, the reaction gas is injected through the inner circumference and the outer circumference of the counter electrode of the second gas injection hole. The center portion of the lower surface of the substrate and the edge region of the substrate are both the reaction film of the knife cloth. Moreover, the gentleman: the density of the particles on the center of the second plate, the crucible and the lower surface. The amount of reactive gas injected into the lang can control the three electrodes of the thief, but four or more electrodes. When divided into a plurality of electrodes, the innermost electrode can be only along it; the circumference; there is: = = = Ο

200826190 26417pif.doc will have a gas injection hole on its inner circumference. Example_1 "The outermost electrode (that is, the electrode in this real is not limited to the first: jinyi, ding configuration. Of course, the outermost N electrodes. In the lower pole, but according to the number of electrodes, see Figure 2 i; f pole as the outermost electrode as an example. = shape shape 'and along the third electrode 43. Week: J has a milk injection hole 432. 筮 斤 狮 ” "" σ 又 又 又 又 430 430 430 430 The = supply line 434 is connected to the third electrode #一一弟-脰乳&gt; the main entrance hole 432 is in communication. The third electrode 430 is directly larger than the diameter of the substrate G, and is at the third j 3 . a portion for placing the substrate on the support portion. Further, the upper surface of the second electrode includes a first plane and a second plane = 38. The second plane 438 is parallel to the first plane 436. A plane and the second plane 438 are connected by a slope extending downward from the first plane. Therefore, an edge region of the lower surface of the substrate G is placed on the second plane, and a side surface of the substrate G faces the first plane 436 and the second A slope between the planes 438. In the above configuration, a support portion is formed in the third electrode 430 to The substrate G can be placed thereon. When the reaction gas is injected into the lower surface of the substrate G, the support portion can prevent the substrate G from being separated from the third electrode 430 due to the injection pressure of the reaction gas, wherein the reaction gas is formed via the first The third gas injection hole 432 of the three electrodes 430 is provided. In the above configuration, the first lower elevator 510 and the second lower elevator 520 respectively connected to the first electrode 410 and the second electrode 420 are configured to be 28 200826190 26417pif .doc is similar to the apparatus of the seesaw, and the first electrode 41a and the second electrode 42 are alternately moved up and down to remove the particles and the film accumulated on the substrate G. The bran, the first lower elevator 510 can be connected to The first electrode 41 is, and the upper elevator 600 is connectable to the insulating member 200 to remove particles attached to the substrate g and a film accumulated on the substrate G. (4) A plasma according to a second exemplary embodiment of the present invention A cross-sectional view of a processing apparatus. Figures 19 and 20 are cross-sectional views illustrating the operation of a plasma processing apparatus in accordance with a second exemplary embodiment of the present invention. The method comprises: a chamber rigid member disposed at an upper portion of the chamber ;); a ground electrode, the bean is disposed at an upper portion of the sidewall of the chamber 1 (10); the lower electrode 400 is disposed with the substrate G in the basin; and the upper lifting member, that is, the upper portion The elevator_and the second lowering machine 5K) are used to move the insulating member up and down and the lower electrode. The plasma body further comprises: a chamber liner layer disposed on the inner wall of the 100; the focus ring 710' is disposed along the lower electrode 4; and the orifice plate 800 is disposed outside the lower electrode 4 Between the inner walls of the circumferential chamber ^. For the same configuration, it will not be described. The upper portion of the insulating member 2 is fixed by the bracket 23A. The upper machine 600 is coupled to the bracket 230 to move the bracket 23 up and down. The drop machine 600 separates the insulating members 2 〇〇 3 electrodes 400 fixed to the bracket 230 by a predetermined distance. The first-lower lifter 5 is connected to the first electrode to move the first electrode 4K) up and down. Connected to the bottom surface of the chamber 1 = == The bottom of the second electrode of the bracket 900. The electrode holder 9 is spaced apart from the bottom of the chamber 100 by a predetermined distance from the 2nd 29th 200826190 26417pif.doc pole 420. The chamber liner 700 is an internal shape along the chamber weir (10). The upper portion of the chamber liner 7 is electrically connected to the lower portion of the outer electrode 32''. The chamber layer 7 (8) protects the sidewalls of the chamber 1 from the influence of the plasma and, similarly to the outer electrode 32, applies a ground potential to the cavity to the layer 700. The focus ring 710 is formed in an annular shape along the outer circumference of the lower electrode 400. When the reaction gas is converted into a plasma, the focus ring 71 聚焦 focuses the plasma onto the substrate G. The orifice plate 800 is a circular plate centered on a bore and includes a through hole 810 formed by a vertical through plate. The orifice plate 80 is disposed between the lower electrode 4〇〇 and the inner wall of the chamber 1〇〇, and in more detail, connects the circumference of the focus ring 71〇 to the inner wall of the chamber 100, thereby dividing the chamber interior Into the upper and lower parts. That is, the orifice plate 800 is used to control the pressure so that the reaction gas is uniformly distributed in the chamber 1b, thereby producing a uniform plasma. Therefore, it is possible to prevent the plasma from being locally concentrated in the chamber 1〇〇. A bump electrode 820 may be provided on one side of the orifice plate 800, i.e., on the upper surface. The bump electrode 820 makes the chamber pressure uniform and acts as an electrode by applying a ground potential thereto. The bump electrode 82A may be coupled to the orifice plate 8〇〇 or may be formed integrally with the orifice plate 800. A ground potential can be applied to the via 80 〇 and the bump H, respectively. It is also possible to simultaneously ground the potential of the orifice plate 800 and the bump electrode 82. As shown in FIG. 19, when the substrate G is placed on the first electrode 41A, the first lower lift 51A connected to the bottom of the first electrode 410 is moved upward, and the first electrode 410 is in the cavity. The upper portion of the chamber 1 is placed at a predetermined distance from the insulating portion 30 200826190 26417pif.doc. Subsequently, the reaction gas flows into the chamber 1 through the internal electrode 310. A ground potential is applied to the inner electrode 310, the outer electrode 32A, and the second electrode 42A, and RF is applied to the first electrode to generate plasma in the chamber 1A. Thereby, the particles and the film accumulated on the upper surface edge region, the side surface, and the lower surface edge region of the substrate G are removed by the slurry. As shown in FIG. 20, when the substrate G is placed on the second electrode 42〇%' is connected to the upper lift 6 of the insulating member 2A, the insulating member 2 (8) is placed at a predetermined distance from the second electrode 420. At the office. Subsequently, self-connected to the chamber supply source i2G, via the channel 110 formed in the chamber cover, provides a reaction to the space 314 in the chamber 310. The reaction gas flows into the bell mouth 312 through the side gas of the inner electrode 31G. In chamber j (8). The galvanic and outer electrodes 320 apply a ground potential, and thus a ground potential is applied to the electrodes 410, where plasma p is generated in the chamber 100. The b-electrode is known to add 820 〇〇 layer 700 to apply the ground potential. The upper surface of the 420 and the chamber ground potential is generated by the application of the substrate G. Since the insulating portion distance is maintained at 1 mm or less;; the central portion of the upper surface of the central portion of the surface of the plate ^ thus does not generate plasma p in the region between the insulating member 200 and the substrate G. Therefore, the plasma P produced as described above in the above-mentioned 31 200826190 26417 pif.doc removes the particles and the film accumulated on the upper surface edge region, the side portions, and the central portion of the lower surface of the substrate G. According to the above configuration, the upper elevator 600 is coupled to the insulating member buckle and the first lower elevator 510 is coupled to the first electrode 41A. Thereby, the upper surface edge region, the side surface, and the fine particles and the film accumulated in the lower surface of the substrate G are removed by the plasma. Face

The apparatus according to the above configuration can be more easily controlled than the lifting member according to the first exemplary embodiment of the present invention. The lifting member according to the first step is for moving the first and second electrodes. Because: b, 2 ^ two chambers ^ in the lower part, and it is not easy to control the lifting parts = according to the younger brother's lifting parts. And although in the above description, the lower elevator is connected to the first j-segment electrode holder is connected to the second electrode, the electrode holder is also connected to the first electrode, and the lower elevator is connectable to the second electrode. Even though, in the above description, electrical connections are provided in the chamber to the outside, although H may be arranged in one direction above. This is done with the lower electrode of the wound plate structure. According to Ke's treatment, this is not limited to mobile. Excessively private, &amp; multiple electrodes can also use semiconductor wafers at the same time. In the plasma processing equipment described above, the system can also be used as a substrate on the flat plate ___ wire. In the above description, in accordance with an exemplary embodiment of the present invention, a RIE type plasma processing apparatus having a plurality of lower electrodes is provided in the fourth embodiment, and the present invention can also be applied to any of the following. Electro-electric water treatment, also available: inductively coupled plasma (ICP); + (CCP) 'Lake the electrons of Laibo / surface wave plasma (,); and remote ·, ^ (=). Electric water, Ο Ο, as described above, _ the edge area, the side, and the lower side of the invention are "soil, 偌 偌 偌 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处The slurry is granulated, and (4) effectively removes the microscopic accumulation in the central region of the lower surface of the substrate without further interference ==; the size of the partial electrode to support the substrate, and invented any form of (4) 4 shells, not for this露如如,妙的, '非田, 1 'Although the present invention has been devised by a preferred embodiment, without departing from the invention, the technique is: It is within the scope of the technical solution of the present invention to disclose the contents of the present invention. Fig. 1 is a cross-sectional view of the present invention in accordance with the invention - z_. Processing Apparatus 200826190 26417pif.doc ^ A perspective view showing a variation of the insulating member provided by the electric processing apparatus according to the first exemplary embodiment of the present invention. Fig. 3疋# is not fixed to the chamber Figure 2 is a cross-sectional view of the figure. Figure 4 is based on this A cross-sectional view of a first variation of the insulating member provided in the plasma processing apparatus of the embodiment. Fig. 5 is a second variation of the insulating member as proposed in the plasma processing apparatus according to the first exemplary embodiment of the present invention. Figure 6 is a rear perspective view of the gas injection ring of Figure 5. The lower portion of the first exemplary embodiment of the present invention is shown in Figures 8 to 11 for removing the side of the substrate and Schematic cross-sectional view of the process of the underlying impurities. Figures 12 to 17 are various variations of the first real pole according to the present invention. *The lower electric of the case of the case: the electrical installation of the second exemplary embodiment of the present invention Figure U is a cross-sectional view illustrating the operation of the plasma processing apparatus according to the second example of the present invention. . . , [Description of main components] 100: chamber 100a: lower chamber 100b: cavity Room cover 110: gas supply passage 120: gas supply source 200826190 26417pif.doc 130: brake 140: exhaust pipe 200: insulating member 200a: inner insulating member 200b: outer insulating member 202: first step 204: second step 206 · Groove 207 Lower groove 208: gas line 209: gas injection ring 209a: injection hole 210: cooling line 230: holder 300: ground electrode 310: inner electrode 312: gas injection nozzle 314: predetermined space 320: outer electrode 400 • lower electrode 410: first electrode 412: first gas injection hole 414: first gas supply line 420: second electrode 35 200826190 26417pif.doc 422 424 426 430, 432 - 434 436 438 c, 440 450 460 470 480 500 510 512 ( 514 520 530 • 600 * 700 710 800 810 open gas injection hole second gas supply line third electrode third gas injection hole third gas supply line first plane second plane cooling line RF power supply RF matching device sensor power distribution Lifting part first lower lift bracket bellows

Second lower elevator stepper motor upper elevator chamber lining focus ring orifice plate overnight L 36 200826190 26417pif.doc 820 : bump electrode 900 : electrode holder A, B, C : diameter G : substrate ' P : plasma • T1: distance 37

Claims (1)

200826190 /pn.doc X. Patent application scope: L-type plasma processing equipment chamber; ^匕δ · Insulation component,: φ ^ connection, ::: the upper part of the chamber... is applied to two grounding = = At the inner side wall of the win room, grounding electricity is located in the lower portion of the chamber, and the substrate is placed in which the lower electrode is divided into a plurality of electrodes. The night drain includes an inner electrode and an outer electrode, and the electrode and the outer electrode are coaxially arranged and spaced apart from each other; the distance between the electrode and the electrode is between (7) and 10 mm. 3. The plasma treatment according to the second aspect of the patent, wherein the O-lifting member is disposed under the lower electrode for moving the lower electrode and the private upper lifting member The insulating member is described as being moved up and down, wherein the lifting member is connected to the inner electrode, and the descending member alternately moves the inner electrode and the outer electrode up and down. 4. The plasma processing apparatus according to claim 2, wherein the insulating member and the fa-shaped wall of the wall-wall are grounded. The ground electrode is connected to the gas supply passage, and the gas supply 38 200826190 / pu.doc The channel is connected to a gas supply source; the outer electrode is supported by the electrode holder; a focus ring is further provided around the outer circumference of the outer electrode; and the inner wall of the focus, the ring and the chamber An orifice plate is provided between. 5. The plasma processing apparatus of claim 2, wherein: a gas injection hole is formed in the plurality of electrodes, and along an outer circumference of the inner electrode and the outer electrode The gas injection hole is formed in a circumference. (6) The plasma treatment subtraction of claim 2, further comprising an intermediate electrode between the inner electrode and the outer electrode, wherein between the inner electrode and the outer electrode Connecting a power splitter, an RF power source connected to the inner electrode and the intermediate electrode, and a sensor further provided between the inner electrode and the Rjp power source and between the intermediate electrode and the RF power source, And forming a gas injection hole along the inner circumference and the outer circumference of the intermediate electrode. 7. The application of the special fiber circumference processing device, wherein the diameter of the intermediate electrode is between the diameter of the outer electrode 56 In the range of % to %, • the diameter of the inner electrode is in the range of 4% to 56% of the diameter of the outer electrode 'and between the inner electrode and the intermediate electrode and the intermediate electrode The distance between the outer electrodes is in the range of 0.1 mm to 10 mm. 39 200826190 26417pif.doc The plasma processing apparatus of claim 6, wherein the inner secret is between 12 and 10 Within 17 〇, The diameter of the inter-electrode is in the range of 170 mm to 210 mm, and the diameter of the outer electrode is in the range of 210 mm to 300 mm, such as the plasma processing apparatus described in claim 2, wherein The insulating member includes an inner insulating member and an outer insulating member, the outer insulating member, the member I being coupled to an outer circumference of the inner insulating member, on an upper surface of the % edge member and a top portion of the chamber Grooves and projections corresponding to each other are respectively formed on the inner surface, and an upper surface of the insulating member is coupled to an inner surface of a top portion of the chamber. An electric equipment processing apparatus, wherein a lower groove having an annular curved shape is formed on a lower surface of the inner insulating member, and a gas injection ring is inserted into the lower groove, and the insulating member is vertically penetrated A gas line is further formed to communicate the lower groove.