200823945 -九、發明說明： .【發明所屬之技術領域】 * 本發明是有關固體電解電容器及其製造方法，尤其是 …有關可以提高在製造階段中之製品良率與焊接時（尤其是 使用無鉛焊錫時）的耐熱性。 【先前技術】 …作為固體電解質而使用之TCNQ(四氛基對苯酉昆二甲 烷 7 ’ 7，8 ’ 8-tetracyano_quin〇dimethane : tcnq)錯鹽或 聚料、聚嗟吩、聚咬喃、聚苯胺等導電性高分子的固體 電解電容器已深受矚目，在要求電子機器小型化中， 望固體電解電容器之小型-大容量化。又為了聊等之作 號處理的高速化、低消耗電力化而逐漸加強傾向於高頻及 大電流化之技術開發，而強烈地要求電容器之低esr。在 此，根據第iO圖及帛u 的固體電解電容哭之制、止古、土门士 k电胖貝之以在 靈此1 法。同日夺，第10 ®係以往之鋁 之剖面圖’第11圖是以往之固體電解電容器之剖 體i rv〇r銘箱切成板狀而作成陽極體1後，將此陽極 體至2 wt%之例如碟酸水溶200823945 - IX, invention description: . [Technical field to which the invention pertains] * The present invention relates to a solid electrolytic capacitor and a method of manufacturing the same, and more particularly to improving product yield and soldering in a manufacturing stage (especially using lead-free) Heat resistance during soldering). [Prior Art] ...TCNQ (tetracycline p-benzoquinone dimethane 7 ' 7,8 ' 8-tetracyano_quin〇dimethane : tcnq) used as a solid electrolyte, wrong salt or aggregate, polybenzazole, poly-baked, A solid electrolytic capacitor of a conductive polymer such as polyaniline has been attracting attention, and in order to miniaturize an electronic device, it is expected that the solid electrolytic capacitor will be small in size and large in capacity. In order to increase the speed of processing and low power consumption, we are gradually developing technologies that tend to high frequency and high current, and strongly demand low esr of capacitors. Here, according to the iO diagram and the solid electrolytic capacitor of 帛u, the system of crying, the ancient, the Tumen k electric fat shell is in the spirit of this method. The same day, the 10th edition of the previous aluminum profile view '11th is the former solid electrolytic capacitor section i rv〇r box cut into a plate shape to form the anode body 1, the anode body to 2 wt % of such as dish acid solubilization
Ai…夕：Ϊ 成處理，而在其表面形成由 2 3所成之电介質氧化被膜]。接著，所" 化被膜2之陽極體丨$、主 、7成有電；丨貝氧 磧酸鐵_、盘塞吩、對-甲苯 化被膜2上形成由^ 學聚合液中，在電介質氧 由♦嘍吩所成之陰極層[導電性高分子層 5 319378 200823945 (固體電解質層）〗3a。此德，/认 %、銀膏層&而完成如第=層％上依序形购 其次，如第”圖^ 所不之1呂單板元件6。 圖所不’在陰極端子I)盘 ^目對之方式配置的導線架上配置 板=^子12 時，藉由在上述銀膏層3c上阶要早板兀.件6。此 極部8盥降極端子】… 置¥琶性接著劑⑺將陰 接使陽極二::極3^^^Ai...: The treatment is carried out, and a dielectric oxide film made of 2 3 is formed on the surface thereof]. Then, the anode body of the film 2 is 丨$, the main, and the battery is electrically charged; the bismuth oxonium oxyhydroxide _, the disk phenophene, and the p-toluene film 2 are formed by the polymerization liquid in the dielectric medium. The cathode layer made of oxo is a conductive polymer layer 5 319378 200823945 (solid electrolyte layer) 3a. This German, /%, silver paste layer & and finished as the first layer% on the order of the second order, such as the first "Figure ^ not the 1 Lu single board component 6. Figure does not 'at the cathode terminal I) When the board is configured on the lead frame of the mode, the board is placed on the above-mentioned silver paste layer 3c, and the element is set to 6. The pole is lowered. The adhesive (7) will be connected to the anode to make the anode two:: pole 3^^^
t=(表面、背面)積層__ 6後==: 二„ 13之—部分外露，並以外裝樹脂14進行 “ ’將自外裝樹脂14外露之各端子12、13各別产著 裝樹脂14彎曲而構成外部端子。經由以上之步 導電性高分子銘積層電容器（參照下述專利文獻1)β [專利文獻1]曰本特開平u_135367號公報 【發明内容】 (發明所要解決之課題） 然而，在上述以往之固體電解電容器中，於製造步驟 中經常發生LC(漏電流）缺失及短路缺失，並且，製造後在 高溫進行回焊（refl〇w)處理時也會有發生Lc缺失之問題。 兹利用第12圖及第14圖來說明其理由。其中，第12圖係 將以往之鋁單板兀件在陽極體之側面朝縱方向切開時之放 大剖面圖（但是，為了容易理解而省略銀膏層3c),第13 圖係以往之鋁單板元件在略為中央朝橫方向切開時之放大 口1J面圖（但疋’為了谷易了解而省略銀膏層3 c),第μ圖係 以往之形成有電介質氧化被膜之陽極體之斜視圖。 319378 6 200823945 「 第12至U圖所不’以往之固體電解電容器，在以 ’ 及(2)所不部位中，陰極層[導電性高分子層（固體 *電解質層）]3a與碳層3b之厚度變小。 … ⑴銘單板元件6之端面21或側面22(所謂邊緣面， 亦為陽極體之剖面） (2)端面21盘铺而《ν、皇田一 _ 侧面22之邊界25，端面21與上下面 23、24之邊界26,及側面22鱼上 謂稜線部) 广、上下面23、24之邊界27(所 由么而且，在陽極體1之端面或侧面（上述陽極體之剖面） 中δ發生毛邊（burr)。 一由於些現象’邊緣面或稜線部、及毛邊發生部 2路等’故固體電解電容器之製造步驟中，Lc(漏電流 缺失及短路缺失之比例變高。其結果，製品之良率下降。 體電解電容器之製造步驟中，在使用如無錯烊 虛士又之回溫回焊㈣ow)步驟中’會有由於熱膨脹等引起之 馨應力而發生LC缺失的問題。 本發明係有鑑於上述之實情而研創者，其目的在提 器及其製造方法，尤其是提高在製造階 錯焊錫:二1，:可以提高製造後焊嫩^ (解決課題之手段） 為了達成上述目的，本發明之固體電解電容器係由且 陽極體之表面依電介質氧化被膜、陰極層、碳層、 層之順序形成之陰極部；及由此陰極部延伸之陽極 319378 200823945 .部的單個鋁單板元件配置而成，或呈借古益 ，件時’則以積層狀態配置鋁單板元件固鋁早板兀 :與上述陽極部延伸之端=反:件而成，其特徵在··於 、评之翊面相對之端面的上述 •膜之表面，係形成有絕緣性樹脂層。被 極部延伸之端面相對之端面上，由於陰極層變 屬’在該&面上會發生短路等，而㈣產生t=(surface, back) laminate __6 after ==: two „13—partially exposed, and the exterior resin 14 is subjected to “'. Each of the terminals 12 and 13 exposed from the exterior resin 14 is separately provided with a resin 14 Bending to form an external terminal. In the above-mentioned conventional solid, the above-mentioned conventional solids are used in the above-mentioned conventional solid state. The above-mentioned conventional solid-state capacitors are disclosed in the above-mentioned prior art. [Patent Document 1] JP-A-135367 In electrolytic capacitors, LC (leakage current) loss and short circuit shortage often occur in the manufacturing process, and there is a problem that Lc is missing when reflowing (refl〇w) is performed at a high temperature after fabrication. The reason for this is explained using Figs. 12 and 14. Here, Fig. 12 is an enlarged cross-sectional view showing a conventional aluminum single-plate member cut in the longitudinal direction on the side surface of the anode body (however, the silver paste layer 3c is omitted for easy understanding), and the thirteenth figure is a conventional aluminum single sheet. An enlarged view of the plate member when the plate member is cut slightly in the center direction (but the silver paste layer 3 c is omitted for understanding of the valley), and the μ picture is an oblique view of the anode body in which the dielectric oxide film is formed in the past. . 319378 6 200823945 "The solid electrolytic capacitors of the past 12th to the Uth, the cathode layer [conductive polymer layer (solid * electrolyte layer)] 3a and carbon layer 3b in the portion where the ' and (2) are not included The thickness is reduced. (1) The end face 21 or the side 22 of the single-plate component 6 (the so-called edge face, which is also the cross section of the anode body) (2) The end face 21 is laid and the boundary of the side surface 22 of "ν, 皇田一_ 25 , the boundary between the end face 21 and the upper and lower faces 23, 24, and the side 22 is said to be a ridge line) wide, the boundary between the upper and lower faces 23, 24 (and the end face or side of the anode body 1 (the above anode body) In the cross section of the δ, a burr occurs. In some cases, the edge surface or the ridge line portion and the burr portion are two, so in the manufacturing process of the solid electrolytic capacitor, Lc (the leakage current is missing and the short circuit is missing). As a result, the yield of the product is lowered. In the manufacturing step of the bulk electrolytic capacitor, in the step of using the temperature-free reflow (four) ow, such as no error, the liquid is generated due to the singular stress caused by thermal expansion or the like. Missing problem. The present invention is based on the above facts. The purpose of the present invention is to improve the quality of the electrode and the method of manufacturing the same, and to improve the manufacturing of the step-by-step solder: 2, which can improve the post-manufacture soldering. (Means for solving the problem) In order to achieve the above object, the solid electrolytic capacitor of the present invention The cathode portion formed by the surface of the anode body in the order of the dielectric oxide film, the cathode layer, the carbon layer, and the layer; and the single aluminum single-plate element of the anode 319378 200823945 extended from the cathode portion is configured or borrowed In the case of Guyi, when the piece is placed, the aluminum single-plate element is fixed in the laminated state. The aluminum plate is fixed with the end of the anode portion: the opposite end: the reverse part is formed, and its characteristics are on the opposite end faces of the surface. The surface of the film is formed with an insulating resin layer. The end surface of the end surface on which the pole portion extends is opposite to the end surface, and the cathode layer becomes "short-circuited on the & surface, and (4)
缺失及短路缺失，作如卜、十、缺摄^ 卜局4/瓜J 仁如上述結構，在該端面之電介質氧化 等之2 要形成有絕緣性樹脂層’就可以抑制短路 主、真x #而且’由於上述端面是陽極體之剖面而會發生 =，但藉由在該端面所形成之絕緣性樹脂層，毛邊可以 後起來。因此’在固體電解電容器之製造步驟中.， 以漏丄電流）缺失及短路缺失之比例可以降低，製品良率得 無^錫固體ί解電容器之製造步驟中，使用如 : ，间’皿的回焊步驟中，即使有由熱膨脹等而造 告！ ΤΓΓ力作用其上’由於絕緣性樹脂層之存在，也可以抑 制LC缺失之發生。 糾 隹也可以採用藉由使陰極層全體之膜厚變大 向使上述端面之陰極層 μ一嘈的膜谷也增大之方法，但該方法由 ;έ有焉固體電解電容哭 之衣造成本高漲之問題發生，故 非所期望者。 ^ 在形成有上述電介質氧化被膜的陽極體兩侧面， 面，彳於共上述陰極部之對應部位之電介質氧化被膜的表 糸以形成有上述絕緣性樹脂層為佳。 在兩側面’陰極層雖變薄且會發生毛邊，但如上述之 319378 8 200823945 結構’該面若只要亦形成有絕緣性樹脂層解 電容器之製造步驟中， 牡口魈私％ ^ T 包流）缺失及短路缺失之比例 可以更加降低，製品良率备争 手曰更加提鬲之同時，於固體電 電容器製造後在其、严、纟曰半職 制。 俊在冋皿回烊步驟中，LC缺失之發生可更加抑 在形成有上述電介質氧化被膜之陽極體的兩側面及 上下面’存在於與形成有上述絕緣性樹脂層之端面鄰接之 2之電介質氧化被膜的表面’係以形成有絕緣性樹脂 马侄。 ^上料側面及上下面，存在^與形成有上述絕緣性 m端面鄰接的部位（所謂邊緣部）之電介質氧化㈣ 、又面’右形成有絕緣性樹脂層，則端面與兩側面之邊界、 二面=下面之邊界、及’側面與上下面之邊界(所謂稜線 P位之陰極層也容易變薄）也將由絕緣性樹脂層所 復。因此，更可以發揮上述作用效果。 籲在形成有上述電介質氧化被膜之陽極體的兩側面中 :對=述陰極部之位置之全面，以及在形成有上述電介 ^化被膜之陽極體的上下面讀接上述兩侧面的部位所 子在之電介質氧化被膜之表面，係以形成有絕緣性樹月旨層 若為上述結構，财在陰極部邊緣部與稜線部列變成完 全被絕緣性樹脂層所覆蓋。因此，更能發揮上述作用效果。 為了達成上述目的，本發明之固體電解電容器，係具 備有由燒結體金屬所成之電容器元件，該燒結體ς屬具^ 319378 9 200823945 -在陽極體之表面依電介質氧化被膜、陰極層、礙層、及銀 :膏層之順序所形成之陰極部，特徵在於：上述電介質氧化 1 ^被膜的稜線與其附近，形成有絕緣性樹脂層。 、 ·、《備有非由I呂單板元件所成，而是：燒結體金屬所 成之電容器元件之固體雷解雷交 _ 股包解书谷益中，因為電介質氧化被 膜在稜線部分容易變薄，故電介質氧化被n線與其附 近若形成有絕緣性樹脂層，就可以發揮與使用由銘單板元 件所成之電谷益元件時同樣之作用效果。 上述絕緣性樹脂層係以環氧樹脂作為主體之 性樹脂所構成較為理想。…更化 *槿如目,，右使用以環氧樹脂作為主體之熱硬化性樹脂之 構，則可以提供便宜之固體電解電容器。此外，以環氧 作為主體，縣所謂的職_含有5⑽上者。 法Φ為2達Ϊ上述目的’本發明固體電解電容器的製造方 I成_=^電容器麵具備單㈣單板元件配置而 陰極層、碳層凡及声在陽極體表面依電介質氧化被膜、 险極邱戶斤_ ，〜β層之順序所形成之陰極部，·及由此 Γ* 伸之陽極部，或者該固體電解電容哭由呈備有 -數健單板元件而成時，該 板 二：f 介質氧化被膜之步：：2括：在陽極題的表面形成電 端面争的電介質氧化被膜^述陽極部延伸之端面相對之 驟；《及在上心表面，形成絕緣性樹脂層之步 以製作料板形錯闕、制、及银斧層 319378 10 200823945 -(發明效果） : 依本發明尤其可以發揮提高在製造階段中之製品良 -率，與製造後之焊接時（尤其是使用無錯焊錫時）的耐熱性 …的優異效果。 【實施方式】 :,明：嶋解電容器將分成2個實施形態來說 疋，本备明並不限定以下所示之實施形態，在不變 ^要曰的範圍下可以適當地變更實施。又，在本實施形能 =，細積層型之固體電解電容器作為例子來說明 [第1實施形態] 關第1實施形態之固體電解電容器，根據第 1圖至弟6圖加以詳細說明。 (固體電解電容器之結構） 第1圖是有關第1實施形態之固體電解電容哭的縱叫 Θ，第3 形態之铭單板元件之平面 j二第1實施形態之链單板元件之剖面圖， = :::在電介質氧化被膜之表面形 脂 W狀'％的平面圖，第5圖是顯示在電介質氧化被膜^ 面形成絶緣性樹脂層時之狀態的斜視: 1實嶋之固體電解電容器的製造步驟圖圖撕 ^弟！圖所示’固體電解電容器W係備 例中疋3片）積層之銘單板元件6,在積層狀能的夂曰 之紹單板46與自下算起第2面位置。二二位置 間’安裝有陽極端…陰極端子13。：:板 319378 11 200823945 ；件陽極端子12、及陰極端子13係保留陽極端子12及 •陰極端子13之下面露出，而其餘以合成樹脂、4覆蓋之结 -構。 、口 i述料板元件6,如第2及第3圖所示，係在由且 金屬的峨成之陽極體1表面’依順序形成 有电"貝氧化被膜2、聚嗟吩系之導電性聚合物所成之陰 =層[導電性高分子層（固體電解質層）加、碳層％鱼銀客 :3 c。在上述電介質氧化被膜2上形成有陰極層％之： ;刀=陰極部8，沒有形成陰極層3a之部分則作為陽極部 此播Γ而言?極部7為由上述陰極部8伸出之結構。將 4、、·口構之紹皁板元件6，在複數片積層狀 之銘單板元件6中之陽極部7彼此㈣ = 紹單板元件6之陰極部8彼此以 f將錢之 具有接者性之導電性膏17 者口疋，而形成固體電解電容器10。此， 2〇是在電阻炫接棒之抵接位置。 在弟2圖中’ •，此’如第5圖所示，在上述電介質氧化 面，亦即，於與上述陽極部7延伸之端斟、之表 $此知® 的侧面22與上下面a，(在本說明 :占有時係將上述端面21及其附近部位稱為邊）， 係形成絕緣性樹脂層16。此。） 樹脂（例如雔胳Ρ ΡU钿層Μ係由以環氧 成。二此ΙΓ::樹:則主體之熱硬化性樹騎構 亦為陽極體之剖斷面)、及端面c ，、上下面23、24之邊界26、及側面“與上下面 319378 12 200823945 ^ 23、24之邊界27(所謂稜線部），陰極層3a變薄之部分將 -由絕緣性樹脂層16所覆蓋。而且，在端面21或側面22(陽 .極體之剖斷面）中，突出之毛邊15會由絕緣性樹脂層“所 …覆蓋。由於此等結構，在邊緣部之處，因為可以抑制短路 等之發生，所以在固體電解電容器之製造步驟中，lc(漏 電流）缺失及短路缺失之比例可以減低，而提高製品良率。 再者在固體電解|容器製造後，在使用$錯焊錫那樣高 籲溫之回焊步驟中，即使有因為熱膨脹等而引起之應力作用 其上，藉由絕緣性樹脂層16之存在，可以抑制Lc缺失之 發生。 、 在此，為了充分呈現上述之作用效果，若考慮到毛邊 15之高度約在20# m左右，及陰極層3a之厚度約在 m左右等，則絕緣性樹脂層16之厚度L2(參考第3圖）以 約在l〇#m左右為佳。另一方面，在製作絕緣性樹脂層μ 之步驟上，上下面23、24也會存有絕緣性樹脂層〗6。然 •而’在上下面23、24中，因為不會發生上述之問題，因: 在該部分非但不要絕緣性樹脂層16，而且在該部分若存有 絕緣性樹脂層16,則固體電解電容器之容量會相對應地下 降。因此，絕緣性樹脂層16之上下面23、24中，寬度Lj(來 照4圖）以約loo# m左右以下為較佳。 (固體電解電容器之製造方法） 首先顯示鋁單板元件6之製造方法。 將鋁箔切成板狀以形成陽極體〗，將此陽極體1在例 如〇·〇 1至2 wt%之例如磷酸水溶液或己二酸水溶液中藉由 319378 13 200823945 ；電解合成處理，而如第6圖（a)所示，在陽極體1之表面形 •成由Al2〇3所成之電介質層2。其次，在端面21及鄰接此 ；端面21之侧面22與上下面23、24(在邊緣部），使用刮刀 (joctor blade)法等塗布以環氧樹脂作為主體之熱硬化性樹 月曰。接著，藉由將熱硬化性樹脂加熱（在12〇艺、1〇分鐘）， 如第6圖（b)所示，形成絕緣性樹脂層丨6。 之後，將前述鋁箔浸潰在由3,4_乙二氧噻吩、對-甲苯 馨磺^鐵、及卜丁醇所成之混合液中，到所預定之位置為止， 如第6圖⑷所不，在電介質氧化被膜2上，以化學氧化聚 合由屬於導電性高分子聚合物之3,4·乙二氧嗟吩所形成之 陰極層3 a ,然後，將开》成陰極層完成後的陽極豸1，浸漬 在擴$有碳粉末之水溶液或有機溶劑的溶液中，重復進^ 、預疋之ZfflL度與日守間乾燥的步驟數次，如第6圖（d)所示， 而形成碳層3b。最後，藉由在此碳層3卜之表面形成銀膏 層3c，而製得如第3圖所示之銘單板元件6。 I n將陰極部8之最外層的料層3e與陰極端子 Π藉由導電性膏17接著固定，另一方面，陽極部了以電 阻熔接法連接到陽極端子12。藉由重復此種步驟，而積層 複數片之料板元件6。再者，最後以外裝樹脂14密封曰， 再藉由將從外裝樹月旨Η露出之各端子分別沿著外裝掛月旨 彎曲，而完成2WV_100#F之固體電解電容器。 [第2實施形態] 以下根據第7圖及第8圖說明本發明之第2實施來 態。第7圖表示在電介f氧化被膜之表面形成絕緣性樹脂 319378 14 200823945 層日守之狀悲的平面圖，第8圖係在電介質氧化被膜之表面 形成絕緣性樹月旨層時之狀態的斜視圖。同時，在盘上 1實施形態有同樣功能之構件，則標註相同之符號。 如第7圖及第8圖所示，銘單板元件6中，在陰極部 8之侧面22(含鄰接側面22之上下兩® 23、24)的全面，除 了全面地形成絕緣性樹脂16之外，其他以與第！實施形態 同樣方式製作固體電解電容器。 ' # [實施例] (實施例1) 本實施例之固體電解電容器，係使用與 施形態說明之固體電解電容器相同方式製作者。U ^ 器A二T另夺如此製得之固體電解電容器稱為本發明電容 (實施例2) 本實施例之固體電解電容器’係使用與在上述第 φ施形態說明之固體電解電容器相同方式製得者。只 以下，將如此製作之固體電解 二 器Α2。 '包谷态稱為本發明電容 (比較例） 除了不設置絕緣性樹脂層之外， 1相同方式製作固體電解電容器。…叫上述實施例 以下，將如此製作之固體雷鉉 ζ。 ^電容器稱為比較電容器 (實驗1) 319378 15 200823945 . 本發明電容器A卜A2及比較電容器Z分別製作8000 A 個，在此等固體電解電容器之出貨檢查步驟中，經檢查LC •缺失率與短路缺失率與LC值（平均），並將結果表示在表1 中 〇 此外，LC值之測定、計算，係在測定對象之電容器 串接IkD之電阻，並對該電阻並連電壓計，在施加額定之 電壓時，藉由測定流動之電流值來進行。又，所稱LC缺 失率，係指各固體電解電容器之LC值為電容（C) X電壓（V) ⑩χ0·1以上者作為不良品時之比例。再者，短路缺失率係 指在施加額定之電壓時，發生短路之固體電解電容器之比 例0 【表1】 電容器之種類 LC缺失率 (%) 短路缺失率 (%) LC值(平均） (//A) 本發明電容器A1 5.7 0.5 2.57 本發明電容器A2 4.2 0.5 2.64 比較電容器Z 18.3 0.9 3.85 由表1可知，本發明電容器A1、Α2與比較例電容器 Z相比，在製造階段（出貨檢查步驟）中，1^(：缺失率與短路 缺失率有大幅度下降，LC值(平均）也被認定有下降。又， 比較本發明電容器Al、A2時，與本發明電容器A1相比， 本發明電容器A2被認定LC缺失率更為下降。此可考慮為 因為是以下之理由。 (1)與比較例電容器Z相比，本發明電容器Al、A2 16 319378 200823945 *在製造階段（出貨檢查步驟）中LC缺失率與短路缺失率大 . 幅下降之理由： • 在比較例電容器Z中，邊緣面或稜線部中，陰極層3 a 與碳層3b之厚度變小，同時毛邊部15突出在剖斷面中。 因此，邊緣部（含毛邊發生部）中，由於會發生短路等，所 以在固體電解電容器之製造步驟中，LC(漏電流）缺失與短 路缺失之比例偏高。相對於此，本發明電容器A1、中， _陰極層3a與碳層补之厚度變小之邊緣面或稜線部係由絕 緣性樹脂層16所覆蓋，同時，在剖斷面中突出之毛邊也由 絕緣性樹脂層16所覆蓋，因此，在邊緣部，因為可以抑制 短路等之發生，所以在固體電解電容器之製造步驟中， LC(漏電流）缺失與短路缺失之比例被認為會下降。 (2)與本發明電容器A1相比，本發明電容器A22Lc 缺失率更為下降之理由： f本發明電容器A1，端面21雖係藉由絕緣性樹脂16 _來覆盍，但在陰極部8中，邊緣面或稜線部並沒有全呷萨 由絕緣性樹脂16來覆蓋。例如，侧面或稜線部2 7之1 ^ 未由絕緣性樹脂層16所覆蓋。相對於此，在本發明電 合為A2中，陰極部8巾，邊緣面或稜線部為全面均藉由 絕緣性樹脂16來覆蓋。因此可判斷相較於本發明電容哭 A1，本發明電容器八2在£〇缺失率方面更為下降。-(實驗2) 將本發明電容器A1、A2及比較電容器z， 方式分別製作各7_個良品，將此等固體電解電容器^行 17 319378 200823945 . 下述之處理，並調查固體電解電容器之LC缺失率與LC 1 值（最大值），結果顯示在表2。此外，LC值之測定、計算 • 方法、及LC缺失率之定義，係與上述實驗1相同，又， • · LC規格值是20 //A(電阻IkD)。 [處理内容] (1)首先，使製品吸收水分，且為了作成更嚴酷之條 件，以下述條件進行MSL3作為前處理。 •條件 ⑩ 溫度60°C、濕度60%之環境下保持40小時之條件 (MSL3加速條件） (2)其次，以下述條件進行回焊。 •條件 在最高溫度為260°C以上之環境下曝露1 〇秒鐘以上， 並且，在平均溫度在217°C以上之環境下曝露90秒鐘以上。 【表2】 電容器之種類 LC缺失率(％) LC值(最大）（//A) 本發明電容器A1 0.16 32.4 本發明電容器A2 0.03 24.9 比較電容器Z 1.48 1636.4Missing and short-circuit missing, such as Bu, X, lack of photo ^ Bu 4 / melon J Ren as in the above structure, in the dielectric oxidation of the end face 2, to form an insulating resin layer 'can suppress short-circuit master, true x #且' Since the above-mentioned end face is a cross section of the anode body, it occurs =, but the burr can be rearward by the insulating resin layer formed on the end face. Therefore, in the manufacturing step of the solid electrolytic capacitor, the ratio of the missing current and the short circuit can be reduced, and the yield of the product is not in the manufacturing step of the tin solid solution capacitor, such as: In the reflow step, even if it is caused by thermal expansion, etc.! It is also possible to suppress the occurrence of LC deficiency due to the presence of the insulating resin layer. It is also possible to adopt a method in which the film thickness of the cathode layer of the end surface is increased by increasing the film thickness of the entire cathode layer, but the method is caused by the coating of the solid electrolytic capacitor crying. This high-risk problem occurs, so it is not expected. It is preferable that the insulating resin layer is formed on the surface of both sides of the anode body on which the dielectric oxide film is formed, on the surface of the dielectric oxide film corresponding to the cathode portion. On both sides, the cathode layer is thinned and burrs may occur, but as in the above-mentioned 319378 8 200823945 structure, if the surface is formed as long as the insulating resin layer is formed, the capacitor is removed. The proportion of missing and short-circuit missing can be further reduced, and the product yield is more demanding. At the same time, after the manufacture of solid electric capacitors, it is strict and partial. In the step of returning the dish, the occurrence of the LC defect can be further suppressed by the dielectric layer 2 adjacent to the end surface on which the insulating resin layer is formed, on both sides and upper and lower surfaces of the anode body on which the dielectric oxide film is formed. The surface of the oxide film is formed to form an insulating resin stirrup. ^The side surface and the upper and lower surfaces of the material are provided with dielectric oxidation (4) at a portion (so-called edge portion) adjacent to the end face on which the insulating m is formed, and an insulating resin layer is formed on the right side, and the boundary between the end surface and the both sides is The two sides = the boundary of the lower side, and the boundary between the side surface and the upper and lower sides (the cathode layer of the P-position of the ridge line is also easily thinned) will also be covered by the insulating resin layer. Therefore, the above effects can be exerted more. In the two side faces of the anode body on which the dielectric oxide film is formed, the entire position of the cathode portion is described, and the portions on the upper and lower surfaces of the anode body on which the dielectric film is formed are read and connected to the both side faces. In the case where the insulating oxide layer is formed on the surface of the dielectric oxide film, the edge portion and the ridge portion of the cathode portion are completely covered with the insulating resin layer. Therefore, the above effects can be exerted more. In order to achieve the above object, the solid electrolytic capacitor of the present invention is provided with a capacitor element formed of a sintered body metal, which is oxidized by a dielectric oxidized film, a cathode layer, and a barrier layer on the surface of the anode body. The layer and the silver: the cathode portion formed by the order of the paste layer is characterized in that an insulating resin layer is formed on the ridge line of the dielectric oxide film and the vicinity thereof. , · "There is a non-Iru single-board component, but the solid-state resolving of the capacitor component made of sintered metal _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Therefore, if the dielectric oxide is formed of an insulating resin layer in the vicinity of the n-line and the vicinity thereof, the same effects as those in the case of using the electric grid element formed by the inscription element can be exhibited. The insulating resin layer is preferably composed of an epoxy resin as a main resin. ...more *For example, if a thermosetting resin having epoxy resin as a main component is used, an inexpensive solid electrolytic capacitor can be provided. In addition, the epoxy is the main body, and the so-called job _ contains 5 (10). The method Φ is 2 for the above purpose. The manufacturer of the solid electrolytic capacitor of the present invention has a single (four) single-plate component arrangement, and the cathode layer and the carbon layer are oxidized on the surface of the anode body by the dielectric oxide film. The cathode part formed by the order of the Qiuhu _, ~β layer, and the anode part of the Γ* extension, or the solid electrolytic capacitor crying is provided with the number of health board components, the board 2 :f The step of oxidizing the film of the medium: 2: forming a dielectric oxidized film on the surface of the anode surface, and the end surface of the anode portion extending oppositely; and "forming the insulating resin layer on the upper core surface" In order to produce a material plate shape, a silver axe layer, and a silver axe layer 319378 10 200823945 - (Effect of the invention): According to the present invention, in particular, it is possible to improve the yield of the product in the manufacturing stage, and the welding after the manufacture (especially Excellent effect of heat resistance... when there is no soldering. [Embodiment] It is to be understood that the capacitors are divided into two embodiments. The present invention is not limited to the embodiments described below, and may be appropriately modified and implemented in a range that does not change. In the present embodiment, the solid electrolytic capacitor of the first embodiment will be described in detail with reference to the first embodiment to the sixth embodiment. (Structure of Solid Electrolytic Capacitor) FIG. 1 is a cross-sectional view of the chain element of the first embodiment of the first embodiment of the first embodiment of the present invention. , =::: a plan view of the surface of the dielectric oxide film W-shaped '%, and FIG. 5 is a squint showing the state of the dielectric oxide film forming an insulating resin layer: 1 Manufacturing steps map tearing ^ brother! In the figure, the "solid electrolytic capacitor W" is a three-piece slab in the case of a slab, and the laminated single-plate element 6 is laminated on the second surface 46 from the bottom. An anode end ... a cathode terminal 13 is mounted between the two positions. :: Plate 319378 11 200823945; The anode terminal 12 and the cathode terminal 13 are formed by leaving the anode terminal 12 and the cathode terminal 13 exposed, and the rest are covered with a synthetic resin and 4 layers. As shown in the second and third figures, the surface of the anode body 1 of the metal is formed in the order of "the shell oxide film 2, the polyphenylene system". The negative layer formed by the conductive polymer [conductive polymer layer (solid electrolyte layer) plus carbon layer % fish silver guest: 3 c. A cathode layer % is formed on the dielectric oxide film 2: a knife = a cathode portion 8, and a portion where the cathode layer 3a is not formed is used as an anode portion for the seeding, and the pole portion 7 is extended by the cathode portion 8 structure. 4, the mouth of the soap board element 6, in the plurality of laminated layer board elements 6 of the anode portion 7 (4) = the cathode element 8 of the single board element 6 with f to the money The conductive paste of the human body is ported to form a solid electrolytic capacitor 10. Therefore, 2〇 is in the abutment position of the resistance splicing rod. In the figure 2 of the second embodiment, as shown in Fig. 5, the dielectric oxidation surface, that is, the end surface 22 extending from the end portion of the anode portion 7, is shown in the side surface 22 and the upper and lower surfaces of the surface. (In the present description, the end face 21 and its vicinity are referred to as sides), and the insulating resin layer 16 is formed. this. Resin (for example, 雔 Ρ Ρ 钿 钿 钿 由 由 。 。 。 。 。 。 。 。 。 。 。 。 。 。 : : : : : : : : : : : : : : : : : : : : : : : : : The boundary 26 of the lower faces 23, 24, and the side surface "the boundary 27 of the upper and lower surfaces 319378 12 200823945 ^ 23, 24 (so-called ridge portion), the thinned portion of the cathode layer 3a will be covered by the insulating resin layer 16. Moreover, In the end surface 21 or the side surface 22 (the cross section of the anode and the polar body), the protruding burrs 15 are covered by the insulating resin layer. With such a structure, in the edge portion, since the occurrence of a short circuit or the like can be suppressed, in the manufacturing step of the solid electrolytic capacitor, the ratio of the loss of lc (leakage current) and the shortage of the short circuit can be reduced, and the yield of the product can be improved. Further, in the reflowing step of high-temperature tempering, such as the use of the wrong solder, after the manufacture of the solid electrolyte|container, even if stress due to thermal expansion or the like acts thereon, the presence of the insulating resin layer 16 can be suppressed. The occurrence of Lc deficiency. Here, in order to sufficiently exhibit the above-described effects, the thickness L2 of the insulating resin layer 16 is considered in consideration of the fact that the height of the burr 15 is about 20 #m, and the thickness of the cathode layer 3a is about m or so. 3)) It is better to be around l〇#m. On the other hand, in the step of producing the insulating resin layer μ, the insulating resin layer 6 is also present in the upper and lower surfaces 23 and 24. However, in the upper and lower faces 23 and 24, since the above problem does not occur, since the insulating resin layer 16 is not required in this portion, and the insulating resin layer 16 is present in the portion, the solid electrolytic capacitor is The capacity will decrease correspondingly. Therefore, in the upper and lower surfaces 23 and 24 of the insulating resin layer 16, the width Lj (hereinafter referred to as Fig. 4) is preferably about loo# m or less. (Manufacturing Method of Solid Electrolytic Capacitor) First, a method of manufacturing the aluminum single-plate element 6 will be described. The aluminum foil is cut into a plate shape to form an anode body, and the anode body 1 is subjected to electrolytic synthesis treatment in, for example, 〇·〇1 to 2 wt% of an aqueous solution of phosphoric acid or an aqueous solution of adipic acid by 319378 13 200823945; 6 (a) shows a dielectric layer 2 formed of Al2〇3 on the surface of the anode body 1. Next, on the end surface 21 and the side surface 22 adjacent to the end surface 21 and the upper and lower surfaces 23 and 24 (at the edge portion), a thermosetting tree which is mainly composed of an epoxy resin is applied by a joctor blade method or the like. Next, the thermosetting resin is heated (at 12 Å, 1 minute) to form an insulating resin layer 丨6 as shown in Fig. 6(b). Thereafter, the aluminum foil is immersed in a mixture of 3,4-ethylenedioxythiophene, p-toluene sulfonate, and butanol to a predetermined position, as shown in Fig. 6 (4). No, on the dielectric oxide film 2, the cathode layer 3 a formed of 3,4·ethylenedioxyphene belonging to the conductive high molecular polymer is chemically oxidized, and then the cathode layer is formed into a cathode layer. The anode crucible 1 is immersed in a solution of an aqueous solution or an organic solvent having a carbon powder, and the steps of drying the ZWlL degree and the drying time of the day are repeated several times, as shown in Fig. 6(d). The carbon layer 3b is formed. Finally, by forming a silver paste layer 3c on the surface of the carbon layer 3, a panel element 6 as shown in Fig. 3 is obtained. The material layer 3e of the outermost layer of the cathode portion 8 is fixed to the cathode terminal Π by the conductive paste 17, and the anode portion is connected to the anode terminal 12 by a resistance welding method. By repeating this step, a plurality of sheet members 6 are laminated. Further, finally, the exterior resin 14 is sealed, and the respective terminals exposed from the exterior tree are bent along the exterior to complete the solid electrolytic capacitor of 2WV_100#F. [Second embodiment] Hereinafter, a second embodiment of the present invention will be described with reference to Figs. 7 and 8. Fig. 7 is a plan view showing a state in which an insulating resin is formed on the surface of the dielectric oxide film 319378 14 200823945, and Fig. 8 is a perspective view showing a state in which an insulating tree layer is formed on the surface of the dielectric oxide film. . At the same time, members having the same functions on the disc 1 are denoted by the same symbols. As shown in FIGS. 7 and 8, in the panel element 6, the entire surface 22 of the cathode portion 8 (including the upper and lower sides of the adjacent side faces 22, 23, 24) is integrated, except that the insulating resin 16 is integrally formed. In addition, the other with the first! Embodiment A solid electrolytic capacitor was produced in the same manner. '# [Examples] (Example 1) The solid electrolytic capacitor of the present example was produced in the same manner as the solid electrolytic capacitor described in the above. The U 2 device A and the T T are separately obtained as the solid electrolytic capacitor thus obtained, which is referred to as the capacitor of the present invention (Example 2). The solid electrolytic capacitor of the present embodiment is manufactured in the same manner as the solid electrolytic capacitor described in the above φth embodiment. Winner. Only the solid electrolytic apparatus 2 thus produced will be as follows. 'The valley state is called the capacitor of the present invention (Comparative Example) A solid electrolytic capacitor was produced in the same manner except that the insulating resin layer was not provided. The above embodiment is as follows. The solid thunder which is thus produced is as follows. ^ Capacitor is called comparison capacitor (Experiment 1) 319378 15 200823945 . The capacitor A A2 and the comparison capacitor Z of the present invention are respectively made 8000 A, and in the shipment inspection step of the solid electrolytic capacitor, the LC missing rate is checked and Short-circuit defect rate and LC value (average), and the results are shown in Table 1. In addition, the LC value is measured and calculated by connecting the capacitor of the measurement target to the resistance of IkD, and the resistor is connected to the voltmeter. When the rated voltage is applied, it is carried out by measuring the current value of the flow. In addition, the LC loss rate is a ratio when the LC value of each solid electrolytic capacitor is a capacitance (C) X voltage (V) of 10 χ 0·1 or more as a defective product. In addition, the short circuit missing rate refers to the ratio of the solid electrolytic capacitor in which the short circuit occurs when the rated voltage is applied. [Table 1] Type of capacitor LC missing rate (%) Short circuit missing rate (%) LC value (average) (/ /A) Capacitor A1 of the present invention 5.7 0.5 2.57 Capacitor A2 of the present invention 4.2 0.5 2.64 Comparative capacitor Z 18.3 0.9 3.85 As is apparent from Table 1, the capacitors A1 and Α2 of the present invention are compared with the capacitor Z of the comparative example in the manufacturing stage (shipment inspection step) In the case, 1^(: the rate of deletion and the rate of short-circuiting are greatly reduced, and the LC value (average) is also considered to be decreased. Further, when comparing the capacitors A1 and A2 of the present invention, the present invention is compared with the capacitor A1 of the present invention. Capacitor A2 is considered to have a lower LC missing rate. This is considered to be the following reason: (1) Capacitor Al of the present invention, A2 16 319378 200823945 compared with the capacitor Z of the comparative example * In the manufacturing stage (shipment inspection step) In the comparative example capacitor Z, in the edge portion or the ridge portion, the thickness of the cathode layer 3 a and the carbon layer 3b becomes small, and the burr portion 15 protrudes. Section Therefore, in the edge portion (including the burr-generating portion), a short circuit or the like occurs, so in the manufacturing process of the solid electrolytic capacitor, the ratio of the LC (leakage current) loss and the short-circuit defect is relatively high. In the capacitor A1, the edge layer or the ridge portion where the thickness of the cathode layer 3a and the carbon layer is reduced is covered by the insulating resin layer 16, and the burrs protruding in the cross section are also made of an insulating resin layer. Since 16 is covered, in the edge portion, since the occurrence of a short circuit or the like can be suppressed, in the manufacturing process of the solid electrolytic capacitor, the ratio of LC (leakage current) loss and short circuit loss is considered to be lowered. (2) With the present invention The reason why the capacitor A1Lc has a lower loss rate than the capacitor A1 is: f The capacitor A1 of the present invention has the end surface 21 covered with the insulating resin 16 _, but in the cathode portion 8, the edge surface or the ridge portion It is not covered with the insulating resin 16. For example, the side or ridge portion 27 is not covered by the insulating resin layer 16. In contrast, in the present invention, the electric portion is A2, the cathode portion 8 towel, The rim surface or the ridge portion is entirely covered by the insulating resin 16. Therefore, it can be judged that the capacitor octa 2 of the present invention is more degraded in terms of the missing rate than the capacitor crying A1 of the present invention. - (Experiment 2) In the capacitors A1 and A2 and the comparison capacitor z of the present invention, 7_good products are respectively prepared, and the solid electrolytic capacitors are processed as follows: 17 319378 200823945. The following processing is performed, and the LC missing rate and the LC 1 value of the solid electrolytic capacitor are investigated. (Maximum value), the results are shown in Table 2. In addition, the LC value measurement, calculation method, and LC deletion rate are defined as in the above experiment 1, and • LC specification value is 20 //A (resistance IkD). [Processing contents] (1) First, the product was allowed to absorb moisture, and in order to make a more severe condition, MSL3 was subjected to pretreatment under the following conditions. • Conditions 10 Conditions for 40 hours at 60 ° C and 60% humidity (MSL3 acceleration conditions) (2) Next, reflow is performed under the following conditions. • Conditions Exposure to an environment with a maximum temperature of 260 ° C or higher for more than 1 sec and exposed to an average temperature of 217 ° C or higher for more than 90 seconds. [Table 2] Type of capacitor LC missing rate (%) LC value (maximum) (//A) Capacitor A1 of the present invention 0.16 32.4 Capacitor A2 of the present invention 0.03 24.9 Comparative capacitor Z 1.48 1636.4
由表2可知，與比較例電容器Z相比，本發明電容器 Al、A2在固體電解電容器製造後的回焊步驟中，LC缺失 率有大幅度下降，LC值（最大）也被認定有大幅度下降。 又，比較本發明電容器Al、A2時，與本發明電容器A1 相比，本發明電容器A2被認定LC缺失率更為下降，LC 18 319378 200823945 •值（取大）也被認定有下降，此種情形被認為是因為以下之 1 理由所致。 • ⑴與比較例電容器z相比，本發明電容器八卜A2在 -回焊步驟中之LC缺失率大幅下降，Lc值（最大）也有大幅 下降之理由： 在使用如無鉛焊錫那樣的高溫下之回焊步驟中，由熱 膨脹等所引起之應力施加到電容器，因此，在未形成絕緣 籲性樹脂層16之比較電容器2中，於端面21等發生短路， 而使LC缺失率變高。相對於此，在形成有絕緣性樹脂層 b之本發明電容器A1、A2中，可推斷是由於在端面⑴ 等可以抑制短路等之發生，所以LC缺失率變低。 (2)與本發明電容器A1相比，本發明電容器A2之LC 缺失率更為下降、LC值（最大）也下降之理由： 如上述實驗1所示，在本發明電容器A1，陰極部8 之故緣面或稜線部並未全面由絕緣性樹脂層16所覆蓋，相 •對於此，在本發明電容器A2,在陰極部8之邊緣面或稜線 部則全面由絕緣性樹脂層16所覆蓋。故可推斷是於在該部 分中也可以抑制短路等之發生，所以[^缺失率或[匸值（最 大）也下降。 (其他事項） (1)在上述實施例中，於全部之鋁單板元件6中雖形 成有絕緣性樹脂層16，但只要至少在i片鋁單板元件6形 成，緣性樹脂層16就可以。又，因為不限定於具有複數個 鋁單板元件之結構，所以鋁單板元件即使使用i個之結構 319378 19 200823945 - 也可以。 • (2)在上述實施例中，於端面21、兩側面22、及上下 •面23、24雖形成有絕緣性樹脂層丨6，但只要至少在端面 ’ 21形成絕緣性樹脂層16就可以。又，在兩侧面22或上下 面23、24形成絕緣性樹脂層16之際，亦可以只在—面之 側面22或上面23形成絕緣性樹脂層丨6。 (3) 作為熱硬化性樹脂，並不限定上述之環氧樹脂，As is clear from Table 2, compared with the capacitor Z of the comparative example, the capacitors A1 and A2 of the present invention have a large drop in the LC defect rate in the reflow step after the manufacture of the solid electrolytic capacitor, and the LC value (maximum) is also confirmed to be large. decline. Further, when the capacitors A1 and A2 of the present invention are compared, the capacitor A2 of the present invention is considered to have a lower LC missing rate than the capacitor A1 of the present invention, and the LC 18 319378 200823945 • value (which is larger) is also considered to have decreased. The situation is considered to be due to one of the following reasons. • (1) Compared with the capacitor of the comparative example, the LC missing rate of the capacitor of the present invention is greatly reduced in the -reflow soldering step, and the Lc value (maximum) is also greatly reduced: in the use of a high temperature such as lead-free solder In the reflowing step, the stress caused by the thermal expansion or the like is applied to the capacitor. Therefore, in the comparison capacitor 2 in which the insulating/non-volatile resin layer 16 is not formed, a short circuit occurs at the end surface 21 or the like, and the LC missing ratio is increased. On the other hand, in the capacitors A1 and A2 of the present invention in which the insulating resin layer b is formed, it is estimated that the occurrence of a short circuit or the like can be suppressed at the end surface (1) or the like, so that the LC defect rate is lowered. (2) The reason why the LC missing ratio of the capacitor A2 of the present invention is further lowered and the LC value (maximum) is also lowered as compared with the capacitor A1 of the present invention: As shown in the above Experiment 1, in the capacitor A1 of the present invention, the cathode portion 8 The edge surface or the ridge portion is not entirely covered by the insulating resin layer 16. Therefore, in the capacitor A2 of the present invention, the edge portion or the ridge portion of the cathode portion 8 is entirely covered with the insulating resin layer 16. Therefore, it can be inferred that the occurrence of a short circuit or the like can be suppressed in this portion, so that the [^ missing rate or [匸 value (maximum)) also decreases. (Others) (1) In the above embodiment, the insulating resin layer 16 is formed in all of the aluminum single-plate elements 6, but the edge resin layer 16 is formed as long as at least the i-plate aluminum single-plate element 6 is formed. can. Further, since it is not limited to a structure having a plurality of aluminum single-plate elements, the aluminum single-plate element can be used even if it has a structure of 319378 19 200823945 -. (2) In the above embodiment, the insulating resin layer 丨6 is formed on the end surface 21, the both side surfaces 22, and the upper and lower surfaces 23 and 24, but the insulating resin layer 16 may be formed at least at the end surface '21. . Further, when the insulating resin layer 16 is formed on both the side faces 22 or the upper and lower faces 23, 24, the insulating resin layer 丨6 may be formed only on the side faces 22 or the upper faces 23 of the face. (3) The thermosetting resin is not limited to the above epoxy resin.
亦可以是尿素樹脂、三聚氰胺樹脂、酚樹脂、不飽和^酯 樹脂、醇酸樹脂、或聚胺酯樹脂等。 曰 (4) 在上述實施例中，雖說明了有關使用鋁單板元件 電容器元件，且積層此鋁單板元件之型式的固體電解 電容器，但也可以適用具有燒結體金屬作為電容器元件之 固體電解電容器。同時，此時，如第9圖所示，只要在表 面形成有電介質氧化被膜4〇之燒結體金屬之稜線部與其 附近形成緣性樹脂層16就可以。此時，雖在圖中沒有顯 在上述电；丨貝氧化被膜40之表面，係依陰極層、碳声、 及銀膏層之順序形成而構成陰極部。X，如第9圖所示 ^限ί於全部稜線部與其附近形成絕緣性樹脂層16之 、’只要在至少一部分稜線部與其附近形成絕緣性樹脂 ?作為具有閥作用之金屬，並不限定上述之鋁，亦 〜系銳等；Χ，作為固體電解質層，並不限定聚嗟 二南系合物，亦可以是聚料系、聚苯胺系、聚 、屯性聚合物或二氧化鐘等。 319378 20 200823945 * [產業上之可能利用] ，斤本發明可以適用於例如行動電話、筆記型電腦、舰 *寺移動資訊終端機之CPU周邊、電源周邊等之中 .‘電容器。 Μ丈用的 【圖式簡單說明】 。圖為第！實施形態之固體電解電容器的縱剖面圖 :2圖為第！實施形態之鋁單板元件之平面圖。 第3圖為第1貫施形態之鋁單板元件之剖面圖。 声』二t示在電介質氧化被膜之表面形成絕緣性樹脂 層守的狀恶平面圖（第1實施形態）。 第5,表示在電介質氧化被膜之表面形成絕緣性樹脂 ㈢日守的狀恶斜視圖（第1實施形態）。 第6⑷至（d)圖表*第】實卿態之固體電解電容 製造步驟圖。 第'圖表不在電介質氧化被膜之表面形成絕緣性樹脂 層時的狀態之平面圖（第2實施形態）。 第囷表示在電介質氧化被膜之表面形成絕緣性樹 層時的狀態之斜視圖（第2實施形態）。 人併_ 9圖表示由燒結體金屬所成之電容器元件中，在電 a貝乳化被膜之表面形成有絕緣性樹脂層時的狀態之斜視 圖 〇 第10圖表不以往鋁單板元件之縱剖面圖。 第π圖表不以往固體電解電容器之縱剖面圖。 Θ表示以在單板元件在陽極體之側面朝縱方 21 319378 200823945 ，向切開時之放大剖面圖。 • 第13圖表示以往鋁單板元 / *開時之放大剖面圖。 任略為中央仙方向切 視囷第14圖係形成以往之電介質氧化被膜的陽極體之斜 1 2 3a 3b 3c 6 7 8 10 ⑩15 16 17 21 22 23 25 27 主要元件符號說明】 陽極體 電介質氧化被膜 陰極層 碳層 銀膏層 單板元件 陽極部 陰極部 ®體電解電·容器 毛邊 絕緣性樹脂層 導電性膏 端面 侧面 、24上下面 I6邊界 稜線部 319378 22It may also be a urea resin, a melamine resin, a phenol resin, an unsaturated ester resin, an alkyd resin, or a polyurethane resin.曰(4) In the above embodiment, although a solid electrolytic capacitor of a type in which an aluminum single-plate element capacitor element is laminated and laminated with the aluminum single-plate element is described, solid electrolytic having a sintered body metal as a capacitor element can also be applied. Capacitor. At this time, as shown in Fig. 9, the edge portion of the sintered body metal in which the dielectric oxide film 4 is formed on the surface may be formed in the vicinity of the edge of the sintered metal layer. At this time, although the above-mentioned electricity is not shown in the figure, the surface of the mussel oxide film 40 is formed in the order of the cathode layer, the carbon sound, and the silver paste layer to constitute a cathode portion. X, as shown in Fig. 9, is limited to the formation of the insulating resin layer 16 in the vicinity of all the ridge portions, and 'as long as at least a part of the ridge line portion and the vicinity thereof form an insulating resin. As a metal having a valve function, the above is not limited. The aluminum is also a ruthenium or the like; and the solid electrolyte layer is not limited to a polyfluorene-based complex, and may be a polymer system, a polyaniline system, a poly-, an anthracene polymer or a oxidization clock. 319378 20 200823945 * [Industrial use], the invention can be applied to, for example, a mobile phone, a notebook computer, a CPU peripheral of a ship mobile information terminal, a power supply periphery, etc. 'Capacitor. The simple description of the drawing. The picture is the first! Longitudinal section of the solid electrolytic capacitor of the embodiment: 2 is the first! A plan view of an aluminum veneer element of an embodiment. Fig. 3 is a cross-sectional view showing the aluminum single-plate element of the first embodiment. The sound "second" shows a plan view of forming an insulating resin layer on the surface of the dielectric oxide film (first embodiment). Fifth, an insulating resin is formed on the surface of the dielectric oxide film. (III) A view of the sinusoidal view (first embodiment). Figure 6(4) to (d) chart * the first step of the solid electrolytic capacitor manufacturing steps. A plan view showing a state in which the insulating resin layer is not formed on the surface of the dielectric oxide film (the second embodiment). The second embodiment shows a state in which an insulating tree layer is formed on the surface of the dielectric oxide film (second embodiment). In the capacitor element formed of the sintered metal, the state in which the insulating resin layer is formed on the surface of the electric emulsifier film is shown in the figure. FIG. 10 is a longitudinal section of the aluminum single-plate element. Figure. The π chart is not a longitudinal sectional view of a solid electrolytic capacitor. Θ is an enlarged cross-sectional view when the single-plate element is cut toward the longitudinal side of the anode body 21 319378 200823945. • Figure 13 shows an enlarged cross-sectional view of a conventional aluminum single-board element / * when opened. The direction of the central slanting 囷 囷 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 Cathode layer Carbon layer Silver paste layer Single-plate element Anode part Cathode part body electrolysis electric cell container edging insulating resin layer Conductive paste end face side, 24 upper and lower I6 boundary ridge line part 319378 22