200818359 九、發明說明： 【發明所屬之技術領域】 叮 叩δ ’係 關於一種可利用一個設備同時進行以下處理之晶圓檢 查設備，即，檢查晶圓之稀釋劑附著物、量測塗佈於晶 圓表面上之光阻劑之厚度、以及檢查包含邊緣曝光之2 圓之侧面。 aa 【先前技術】 士一般而言，光阻劑之塗佈方法係將晶圓固定安裝於 平堂上之後’如圖！所示，向上述晶圓W之上表面中 心噴射光阻劑PR，並使上述晶圓％以料速度旋轉， 由此將集中於中心部之光阻齊】pR塗佈於晶圓整個表 面，該方法由於將光阻劑均勾地塗佈於晶圓之整個區 域’故曝光時即使對晶圓之巾央部與周邊部制相同之 曝光能量，曝光圖案亦可以固定水準界定。 亚且，如圖2所示之剖面顯示之部分，晶圓上之光 阻d PR必須僅塗佈於晶圓w之上表面，但由晶圓旋轉200818359 IX. Description of the invention: [Technical field to which the invention pertains] 叮叩δ' is a wafer inspection apparatus that can simultaneously perform the following processing using one device, that is, to check the diluent deposit of the wafer, and to measure and apply it to The thickness of the photoresist on the surface of the wafer, as well as the side of the 2 circles including the edge exposure. Aa [Prior Art] Generally speaking, the coating method of the photoresist is to fix the wafer on the flat body. As shown, the photoresist PR is sprayed toward the center of the upper surface of the wafer W, and the wafer % is rotated at the material speed, thereby applying the light resistance concentrated at the center portion to the entire surface of the wafer. In this method, since the photoresist is uniformly applied to the entire area of the wafer, the exposure pattern can be defined at a fixed level even when the same exposure energy is applied to the central portion of the wafer and the peripheral portion during exposure. In addition, as shown in the cross-sectional view shown in Figure 2, the photoresist d PR on the wafer must be applied only to the upper surface of the wafer w, but rotated by the wafer.
而：生之離心力會使光阻劑pR如虛線所示覆蓋晶圓W 之以緣（edge)，即晶圓之側面及下表面卜部分，因 而成為積層有多個晶圓之晶匣内部之侧面及下表面受 到污染之主要原因。 因需沿著圖2之垂直方向上所示之線來去除光 阻刻’此時，择田料企 便用對先阻劑之溶解能力優良之稀釋劑 200818359 (thinner )，並且如圖3a所示，上述稀釋劑經由配置形 成於晶圓W之上、下部之稀釋劑喷嘴100進行強力噴 射，藉此而如圖3b所示，將旋轉之晶圓w上的無用光 阻劑PR去除。 • 與之相應，如圖4a所示，自稀釋劑喷嘴1〇〇噴射 • 之稀釋劑依次喷撞塗佈於晶圓表面上之光阻劑及腔室 120之内壁之後，再次彈回稀釋劑喷嘴1〇〇之入口侧， , 但此時由於上述稀釋劑中溶解有黏性光阻劑，因此如圖 4b所示上述稀釋劑黏者並凝固於稀釋劑喷嘴1⑼之入 口侧，故無法使自稀釋劑喷嘴100噴射之稀釋劑具有直 進性，其一部分與凝固於入口侧之稀釋劑碰撞而喪失直 進性，向晶圓表面不規則地飛散，並如圖4e所示，產 生於上述晶圓W之表面造成稀釋劑污點之稀釋劑附著 物（thinner attachment) 130，該稀釋劑附著物13〇會於 舄要咼精岔度之晶圓製造中造成嚴重之不良影響，因此 、 必須對稀釋劑附著物進行檢查，此時，稀釋劑附著物為 了由肉眼確s忍者以及因過小而無法由肉眼確認者。 - 其次，不僅需對上述稀釋劑附著物進行檢查，而且 亦要求h查塗佈於晶圓表面上之光阻劑之厚度的均勻 性，於製造晶圓時，亦要求檢查對晶圓側面脫落後產生 之缺陷進行檢查的碎片（Chipping)，即進行側面檢查。 又，上述側面檢查中，亦包含對由邊緣曝光（edge expose )所導致之不良現象之檢查，因此，將參照隨附 6 200818359 圖式’對上述邊緣曝光進行如下更具體地說明。 通常，如圖3a所示，在欲去除利用稀釋劑噴嘴1 〇〇 覆蓋晶圓之侧面及下表面之無用光阻劑PR時，經過曝 光（Exp0se)後實際可使用之部分係如圖5a所示之邊 界内之光阻劑PR，而邊界外側之光阻劑pR係用以確保 誤差容許範圍者，故於曝光後該邊界外侧之光阻劑pR 仍為無用光阻劑，必須去除。 該去除方法係於晶圓曝光時，邊界内之光阻劑pR 接收光後成為凝固狀態，但邊界外侧之光阻劑pR尚未 成為凝固之狀態，經過其他曝光而凝固後，在顯像時， 一併去除邊界内侧及外側之光阻劑。 · 另一方面，無法即時地同時進行上述一系列檢查， 即，對由稀釋劑附著物所造成之晶圓污點之檢查，Z及 對塗佈於晶圓表面上之光阻劑之厚度檢查，而是可分別 利用另外不同之檢查設備來檢測及確認上述缺陷，因此 毫無疑問會導致檢查作業之繁雜性及不便性，而且導致 作業之迅速性及高效性降低。 又，對上述由稀釋劑附著物所造成之晶圓污點之檢 查，僅檢查可由肉眼確認之稀釋翁著物，而不檢查益 法由肉眼確認之稀釋劑附著物，於上述侧面檢查時，亦 僅於晶圓之上、下部設置相機來對晶圓之上、下表面的 微粒等進行檢查，而無法對晶圓之實際邊緣部分進行碎 片檢查，即侧面檢查。 7 200818359 【發明内容】However, the centrifugal force of the raw material causes the photoresist pR to cover the edge of the wafer W as indicated by a broken line, that is, the side surface and the lower surface portion of the wafer, thereby forming a wafer with a plurality of wafers. The main cause of contamination of the side and lower surfaces. Because it is necessary to remove the photoresist along the line shown in the vertical direction of Figure 2, at this time, the selected material will use the thinner 200818359 (thinner) with excellent solubility for the first resist, and as shown in Figure 3a. The diluent is strongly sprayed through the diluent nozzle 100 disposed above and below the wafer W, thereby removing the unnecessary photoresist PR on the rotating wafer w as shown in FIG. 3b. • Correspondingly, as shown in Fig. 4a, the thinner sprayed from the thinner nozzle 1 is sequentially sprayed against the photoresist coated on the surface of the wafer and the inner wall of the chamber 120, and then rebounded again. At the inlet side of the nozzle 1 ,, at this time, since the viscous photoresist is dissolved in the diluent, the diluent adheres to the inlet side of the diluent nozzle 1 (9) as shown in FIG. 4b, so The diluent ejected from the diluent nozzle 100 has straightness, a part of which collides with the diluent solidified on the inlet side to lose straightness, irregularly scatters toward the surface of the wafer, and is generated on the wafer as shown in FIG. 4e. The surface of W causes a thinner stain of thinner adhesion 130, which will cause serious adverse effects in the manufacture of wafers with a high degree of precision. Therefore, it is necessary to The attached matter was inspected, and at this time, the diluent attachment was not confirmed by the naked eye for the naked eye and because it was too small. - Secondly, it is not only necessary to check the above-mentioned thinner deposits, but also to check the uniformity of the thickness of the photoresist applied on the surface of the wafer. When manufacturing the wafer, it is also required to check the side of the wafer. The chip that is produced after the defect is inspected, that is, the side inspection is performed. Further, in the above-described side inspection, the inspection of the edge phenomenon caused by the edge exposure is also included. Therefore, the above-mentioned edge exposure will be more specifically described below with reference to the accompanying drawings. Generally, as shown in FIG. 3a, when it is desired to remove the useless photoresist PR covering the side and the lower surface of the wafer by using the diluent nozzle 1 , the portion which can be actually used after exposure (Exp0se) is as shown in FIG. 5a. The photoresist PR in the boundary is shown, and the photoresist pR outside the boundary is used to ensure the error tolerance. Therefore, the photoresist pR outside the boundary after exposure is still a useless photoresist and must be removed. The removal method is such that when the wafer is exposed, the photoresist pR in the boundary receives the light and becomes a solidified state, but the photoresist pR outside the boundary has not yet been solidified, and after solidification after other exposure, during development, Together, the photoresist on the inside and outside of the boundary is removed. · On the other hand, it is not possible to perform the above-mentioned series of inspections at the same time, that is, the inspection of the wafer stain caused by the diluent deposit, Z and the thickness inspection of the photoresist applied on the surface of the wafer, Instead, the above-mentioned defects can be detected and confirmed by using different inspection apparatuses, respectively, so that the trouble of the inspection work and the inconvenience are undoubtedly caused, and the speed and efficiency of the work are lowered. Moreover, in the inspection of the wafer stain caused by the above-mentioned diluent deposit, only the diluted material which can be confirmed by the naked eye is inspected, and the diluent attachment confirmed by the naked eye is not checked, and when the side inspection is performed, The camera is placed on the upper and lower sides of the wafer to inspect the particles on the upper and lower surfaces of the wafer, and the actual edge portion of the wafer cannot be subjected to debris inspection, that is, side inspection. 7 200818359 [Summary content]
=此’本發明係為解決上述先前之各問題點 者、、目的在於，可利用一個設備同時進行以下處理X :光:⑽物、量測塗佈於晶圓表面上 ;面。1 H以及檢查包含邊緣曝光之晶圓之側 為達成上述目的，本發明提供一種晶 , 其特徵在於：在且有上、 > —叹備， /、有Τ表面及側面之設備本體之内 已.卡具，其使晶圓固定並旋轉；第一裝置，1 设置於上述卡具之上部側，用於檢測安裝於卡呈中之: 圓表面之稀釋劑附著物；第二裝置，其同時檢查安裝: 上述卡具中之晶圓之上部側面及下部側面，並藉由該等 之組合來檢查晶圓之側面；以及第三裝置The present invention is directed to solving the above-mentioned problems, and it is an object of the present invention to simultaneously perform the following processing by one apparatus: X: light: (10), measurement applied to the surface of the wafer; 1 H and inspection of the side of the wafer including the edge exposure. To achieve the above object, the present invention provides a crystal characterized by: <>>- sigh, /, Τ surface and side of the device body a fixture for fixing and rotating the wafer; a first device, 1 disposed on the upper side of the fixture for detecting a diluent attachment mounted on the surface of the card; a second device; Simultaneously inspecting the mounting: the upper side and the lower side of the wafer in the fixture, and checking the side of the wafer by the combination; and the third device
安裝於上述卡具中之晶圓上的光阻劑之厚度。 J 又，本發明之設備本體可沿著兩側具有側面導板之 基座上之側執而移動。 又’本發明之第一裝置由設置於下部垂直方向上之 :釋劑附著物檢測用相機而構成，且上述稀釋劑附著物 、!l用相機可藉由具有側執之支架而沿設備本體之側 面部移動。 一/又本發明之稀釋劑附著物檢測用相機與照明部一 體化成’㈣明部於中央貫通有相機鏡筒部之支持體的 下表面，具備多個燈。 8 200818359 又，本發明之第二裝置由第一、第二碎片檢查部而 構成，該第一、第二碎片檢查部分別配置於晶圓之一側 及另一側之上、下部，且沿著側執並沿著設備本體之側 面移動，上述第1、第二碎片檢查部包括第一、第2反 射稜鏡及第一、第二碎片檢查用相機，其中，上述第一、 第二反射稜鏡分別配置於晶圓之一侧上部及另一側下 部，且具有45度反射角；上述第一、第二碎片檢查用 相機用於拍攝因照明而自上述第―、第二反射稜㈣入 之晶圓影像。 入’奉發明之第 上部反射稜鏡，其配置於晶圓之一側上部，且具有Μ 度反射角；下部反射稜鏡，其以與上述上部反射棱鏡對 向之方式而配置於晶圓之下部，且包含射人有由上部反 射稜鏡所反射之影像之延長部；以及碎片檢查用相機， 用於拍攝自上述下部反射稜鏡所射人之影像；且上述 上、下部反射稜鏡與碎片檢杳用相撼 ^ 、L朴 卞/7概笪用相機一併沿著侧執而移 動0 又，本發明之特徵在於，對上述第三裝置而言，發 之頭，先經由可沿著移送執道於晶圓半徑方向上移動 光邻2照射至晶^表面’其反射之光經由頭部而被受 離收’該接收之光藉由光譜感測器而按波長帶分 述弟二裝置根據該分離之不同波長帶之信號強 又’來量測塗佈於晶圓表面上之総劑之厚声。 200818359 本發明可利用一個設備同時進行以下處理，即，檢 查晶圓之稀釋劑附著物、檢查晶圓側面、以及量測光阻 劑之厚度，藉此，不存在原本作業之繁雜性及不便性， 亦，利用另外設備進行各項檢查後，將檢查結果組合來 ^ _ a日圓有然不良，而是可於一個模組内即時地判斷晶 圓有無不良，目此不僅可確保晶圓檢查之迅速性及簡便 性，亦可同時檢查原本無法檢查之包含邊緣曝光之側 面’故可實現晶圓檢查之正確性及高效率之效果。 【實施方式】 以下，芬照隨附圖式，利用實施例來詳細說明本發 明之構成。 x 圖6係表示本發明之整體構成之剖面圖。 如此處之圖示，本發明之特徵在於，具備具有上、 下表面及侧面之設備本體卜且於上述設備本體i之内 部具備：將晶目W真空吸附以使其固定並旋轉之卡具 2;檢測安裝於上述卡具2中之晶圓貨表面之稀釋劑附 者物的第-裝置3;檢查上述晶圓w之檢查之第二裝置 4，以及里測上述晶圓w上之光阻劑之厚度的第三穿置 5 ;且本發明可於一個模組内同時進行以下處理了^， 檢查晶圓之稀釋劑附著物、晶圓侧面、以及量測光阻劑 之厚度。 並且’上述設備本體1係可沿著基座6上之側軌 R1而移動者’且侧面導板6&以可引導設備本體工移動 200818359 之方式一體地形成於基座6之兩側。 '第衣置3係在安裳於卡具2中之晶圓w之 Γ朝向上述晶圓’於下部垂直方向上設置有稀釋劑 附著物檢測用相機3〗者，並 有其利用所拍攝之晶圓表面影 像來仏測晶圓之稀釋劑附著物，且藉由具有側軌幻之 支架32而可於設備本體1之側面部移動。 又，上述稀釋劑附著物檢測用相機31係與照明部 /. ^ 一體形成者，上述照明部33由中央部貫通有相機鏡 筒部之支持體33a而形成，於上述支持體33a之下表 面，具備多個燈33b。 如圖7所示，本發明之第二裝置4係可沿側軌幻 而移動者，其位於卡具2中所安裝之晶圓w之側面部。 圖8a表示本發明第二裝置之第一實施例，如此處 圖示，本發明第二裝置由第一、第二碎片檢查部41、 而構成，該第一、第二碎片檢查部41、42分別配置於 晶圓W之一侧及另一側上、下部，且沿著側執R1並沿 著設備本體1之側面移動， 弟一、弟二碎片檢查部41、42包括第一、第二反 射稜鏡41a、42a及第一、第二第二碎片檢查用相機41b、 42b，其中，第一、第二反射棱鏡41 a、42a分別配置於 晶圓之一側上部及另一側下部，且具有45度反射角； 第一、第二碎片檢查用相機41b、42b用於拍攝因照明 46而自上述第一、第二反射稜鏡4la、42a射入之晶圓 11 200818359 影像。 具有上述構成之本發明可使第一碎片檢查部Μ所 拍攝之晶圓上部側面之影像及第二碎片檢查部42所拍 攝之曰曰圓下部侧面之影像進行組合，藉此來檢查晶圓^ 之側面’此時如圖10所示，上述晶圓藉由卡具2而以 18〇度為單位旋轉，並且上述第一碎片檢查部41及第二 &查部42 -面沿著側執R1進行直線往復運動，一 面對晶圓之側面進行檢查。 -圖8b表示本發明第二裝置之第二實施例，如此處 圖不’本發明第二裝置具備以下部分：上部反射棱鏡 43，其配置於晶圓％之_側上部，具有45度反射角； 下部反射稜鏡44,其以與上部反射稜鏡43對向之方式 配置於晶® W另-侧之下部，且包括射人有由上部反 射矛夂鏡43所反射之影像之延長部构；以及碎片檢查用 相機45,其配置於下部反射稜鏡Μ之側面部，用；拍 攝自下部反射稜鏡44所射人之影像；且與第—第一每 施例相同，晶圓旋轉，並且上、下部反射稜鏡43、二 與碎片檢查肋機45 —併沿著側軌R1進行直線往復運 動。 圖9係表示本發明之第三裝置之構成圖。 /如此處圖示’本發明第三裝置利用由光譜感測器54 而形成之波長，對塗佈於晶圓w表面上之総劑找之 厚度進行量測’因此’具備可沿著移送執道R2於晶圓 12 200818359 電路，即，上述 上述受光部53 54與控制部55 半徑方向上移動之頭部51，且構成如下 頭部51與發光部52及受光部53連結， 與光譜感測器54連結，上述光譜感測器 連結。 具有上述構成之本發明，首先，發光部 由頭部51而照射至晶圓W之表面，自晶®反射之t ”i而被受光部53接收。繼而，該所接收之 光猎由光譜感測器54按波長帶分離，本發明第二壯置 根據該分離之不同波長帶之信號強度，利用控㈣衣^ 來量測塗佈於晶圓表面上之光_之厚度，此時，不同 波長帶之信號強度與透過率成比例，與厚度成反比例。 即’ ^度料，透過率表現為低，厚度薄時，透過率表 現為高’ g此可量測塗佈⑨晶圓I面上之光阻劑之厚 度0 片子 另一方面，可以通常之裝置，經由侧軌Ri及移送 軌道R2,來移動設備本體卜稀釋劑附著物檢測用相機 31以及PR厚度檢測用頭部51，可應用lm導執（Unear Motion Guide，直線運動導執）作為其代表裝置。 【圖式簡單說明】 圖1係用以說明普通晶圓之稀釋劑附著物之例示 圖’且圖1係表示於晶圓上塗佈光阻劑之過程之平面圖。 圖2係用以說明普通晶圓之稀釋劑附著物之例示 圖’且圖2係表示晶圓上之光阻劑塗佈狀態之剖面圖。 13 200818359 圖3係用以說明普诵曰圓 9通日日圓之稀釋劑附著物之例示 圖，且圖3a、圖3b将矣+丄ττ人ω 係表不去除晶圓上無用光阻劑之過 程的正面圖及平面圖。 圖4係用以說明普通晶圓之稀釋劑附著物之例示 圖，且圖4a至圖4c係表示稀釋劑附著物產生過程之例 示圖。 圖5a、圖5b係表示邊緩暖古广^ 政琢曝光（edge expose)過程 之剖面圖。 圖6係表示本發明之整體構成之剖面圖。 圖7係表示® 5之第二裝置之局部放大立體圖。 圖8a係表示本發明之第二裝置之第一第_實施例 的概略構成圖，圖8b係表示本發明之第二裝置之第二 實施例的概略構成圖。 — 圖9係表示本發明之第二裝置之檢查過裎的平面 圖。 圖10係表示本發明之第三裝置之構成的概略構成 圖。 【主要元件符號說明】 1 設備本體 2 卡具（chuck) 3 第一第一裝置 4 第二第二裝置 5 第三裝置 14 200818359 6 基座 6a 侧面導板 31 稀釋劑附著物檢測用相機 32 支架 33 照明部 33a 支持體 33b 燈 41 第一碎片檢查部、 42 第二碎片檢查部 41a 第一反射稜鏡 42a 第二反射稜鏡 41b 第一檢查用相機 42b 第二碎片檢查用相機 43 上部反射稜鏡 44 下部反射稜鏡 44a 延長部 45 碎片檢查用相機 51 頭部 52 發光部 53 受光部 54 光譜感測器 55 控制部 W 晶圓 15The thickness of the photoresist on the wafer mounted in the fixture described above. Further, the apparatus body of the present invention can be moved along the side of the base having the side guides on both sides. Further, the first device of the present invention is constituted by a camera for detecting an attachment attachment in a vertical direction of the lower portion, and the above-mentioned diluent attachment, the camera for the lens can be carried along the device body by a bracket having a side holder The side portion moves. In addition, the camera for detecting a diluent attachment according to the present invention is integrated with the illuminating unit. The fourth portion has a plurality of lamps provided on the lower surface of the support body through which the camera barrel portion passes through the center. 8 200818359 Further, the second device of the present invention is composed of first and second debris inspection portions, and the first and second debris inspection portions are respectively disposed on one side of the wafer and on the other side, at the lower portion, and along The first and second debris inspection units include first and second reflections, and first and second debris inspection cameras, wherein the first and second reflections are moved along the side of the apparatus body.稜鏡 respectively disposed on one side of the wafer and the lower part of the other side, and having a reflection angle of 45 degrees; the first and second fragments of the inspection camera are used for photographing the illumination from the first and second reflection ribs (four) Into the wafer image. The first upper reflection enthalpy of the invention is disposed on one side of the wafer and has a irradiance angle; and the lower reflection iridium is disposed on the wafer so as to oppose the upper reflection prism. a lower portion, and includes an extension portion of the image reflected by the upper reflection 稜鏡; and a camera for detecting the fragment, for capturing an image of the person shot from the lower reflection ;; and the upper and lower reflection 稜鏡The debris inspection is performed by using the camera, and the camera is moved along the side. The invention is characterized in that, for the third device, the head is first The transfer is carried out in the radial direction of the wafer, and the light is irradiated to the surface of the crystal. The reflected light is received by the head. The received light is divided by the wavelength sensor by the spectrum sensor. The second device measures the thick sound of the sputum applied to the surface of the wafer based on the signal strength of the separated different wavelength bands. 200818359 The present invention can simultaneously perform the following processing by using one device, that is, checking the diluent deposit of the wafer, inspecting the side of the wafer, and measuring the thickness of the photoresist, thereby eliminating the complexity and inconvenience of the original operation. Moreover, after performing various inspections with another device, the inspection results are combined to make the _a yen defect, but the wafer can be immediately judged in a module, and the wafer inspection can be ensured. The speed and simplicity of the film can also be checked at the same time as the side of the edge that can not be inspected, so that the correctness and high efficiency of the wafer inspection can be achieved. [Embodiment] Hereinafter, the configuration of the present invention will be described in detail by way of embodiments with reference to the accompanying drawings. x Figure 6 is a cross-sectional view showing the overall configuration of the present invention. As shown in the drawings, the present invention is characterized in that the apparatus body having the upper and lower surfaces and the side surface is provided, and the inside of the apparatus body i is provided with a chuck 2 for vacuum-adsorbing the crystal mesh to be fixed and rotated. a first device 3 for detecting a thinner attached to a surface of the wafer on the fixture 2; a second device 4 for inspecting the wafer w, and a photoresist for detecting the wafer w The third pass 5 of the thickness of the agent; and the present invention can simultaneously perform the following processing in a module, checking the thin film attachment of the wafer, the side of the wafer, and the thickness of the measuring photoresist. And, the apparatus body 1 described above is movable along the side rail R1 on the base 6, and the side guides 6& are integrally formed on both sides of the base 6 in such a manner that the guide device body move 200818359. 'The first clothes 3 is placed on the wafer w in the fixture 2, and the thinner attachment detection camera 3 is placed in the lower vertical direction of the wafer. The wafer surface image is used to detect the thin film attachment of the wafer, and can be moved on the side surface of the apparatus body 1 by having the side rail magic bracket 32. Further, the diluent attachment detecting camera 31 is integrally formed with the illumination unit. The illumination unit 33 is formed by a support portion 33a through which the camera barrel portion is penetrated from the center portion, and is formed on the lower surface of the support body 33a. There are a plurality of lamps 33b. As shown in Fig. 7, the second device 4 of the present invention is movable along the side rails, which is located on the side portion of the wafer w mounted in the fixture 2. Figure 8a shows a first embodiment of the second device of the present invention. As illustrated here, the second device of the present invention is constituted by the first and second debris inspection portions 41, and the first and second debris inspection portions 41, 42 Disposed on one side and the other side of the wafer W, respectively, and on the side, and along the side R1 and along the side of the device body 1, the first and second pieces of the inspection unit 41, 42 include the first and second The reflection cassettes 41a and 42a and the first and second second fragment inspection cameras 41b and 42b are disposed on the upper side and the lower side of the wafer, respectively. The first and second chip inspection cameras 41b and 42b are used to capture the image of the wafer 11 200818359 incident on the first and second reflection electrodes 4la and 42a by the illumination 46. According to the present invention having the above configuration, the image of the upper side surface of the wafer imaged by the first chip inspection unit and the image of the lower side surface of the circle captured by the second chip inspection unit 42 can be combined to check the wafer. The side surface 'At this time, as shown in FIG. 10, the wafer is rotated by 18° in the unit of the chuck 2, and the first debris inspection unit 41 and the second & inspection unit 42 are side-by-side R1 performs a linear reciprocating motion and checks the side of the wafer. - Figure 8b shows a second embodiment of the second device of the present invention. As shown here, the second device of the present invention has the following portion: an upper reflecting prism 43 disposed on the upper side of the wafer, having a 45-degree reflection angle a lower reflecting cymbal 44 disposed opposite the upper reflecting cymbal 43 in the lower portion of the crystal W, and including an extension of the image reflected by the upper reflecting lance mirror 43 And a chip inspection camera 45 disposed on a side surface of the lower reflection cymbal for capturing an image of a person shot from the lower reflection 稜鏡 44; and the wafer rotation as in the first-first embodiment And the upper and lower reflecting dams 43, two and the debris inspection rib machine 45 - and linearly reciprocating along the side rail R1. Fig. 9 is a view showing the configuration of a third device of the present invention. / As illustrated herein, 'the third device of the present invention utilizes the wavelength formed by the spectral sensor 54 to measure the thickness of the sputum applied to the surface of the wafer w. Therefore, it is possible to carry along the transfer. The track R2 is connected to the wafer 12 200818359 circuit, that is, the head portion 51 in which the light receiving portion 53 54 and the control portion 55 are moved in the radial direction, and the head portion 51 is connected to the light emitting portion 52 and the light receiving portion 53 and is spectrally sensed. The devices 54 are connected and the spectral sensors are connected. According to the invention having the above configuration, first, the light-emitting portion is irradiated onto the surface of the wafer W by the head portion 51, and is received by the light-receiving portion 53 from the crystal "reflected by the crystal". Then, the received light is sensed by the spectrum. The detector 54 is separated by a wavelength band, and the second strong position of the present invention measures the thickness of the light applied on the surface of the wafer by using the control (four) clothing according to the signal intensity of the separated different wavelength bands. The signal intensity of the wavelength band is proportional to the transmittance and inversely proportional to the thickness. That is, the ^^ material, the transmittance is low, and the transmittance is high when the thickness is thin, which can measure the surface of the 9 wafers. On the other hand, the device body may be moved through the side rail Ri and the transfer rail R2 to move the apparatus body thinner attachment detecting camera 31 and the PR thickness detecting head 51. The lm guide (Unear Motion Guide) is used as its representative device. [Simplified Schematic] FIG. 1 is an illustration of a thin film attachment of a conventional wafer, and FIG. 1 is a graph showing Flattening the process of coating the photoresist on the circle Fig. 2 is a schematic view for explaining a diluent deposit of a conventional wafer, and Fig. 2 is a cross-sectional view showing a state of application of a photoresist on a wafer. 13 200818359 Fig. 3 is a diagram for explaining Pu'er An illustration of a thinner 9-day Japanese yen thinner attachment, and Figures 3a and 3b show a front view and a plan view of the process of not removing the useless photoresist on the wafer by 矣+丄ττ人ω. To illustrate an example of a diluent deposit of a conventional wafer, and FIGS. 4a to 4c are diagrams showing an example of a process for producing a diluent deposit. FIG. 5a and FIG. 5b show the edge of the warming of the ancient Guang ^ political exposure (edge Figure 6 is a cross-sectional view showing the overall configuration of the present invention. Fig. 7 is a partially enlarged perspective view showing the second device of the present invention. Fig. 8a is a first view showing the second device of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 8b is a schematic configuration view showing a second embodiment of the second device of the present invention. Fig. 9 is a plan view showing the second device of the present invention. A schematic configuration diagram of the configuration of the third device of the invention. DESCRIPTION OF REFERENCE TO RELATED APPLICATIONS] 1 device body 2 chuck 3 first first device 4 second second device 5 third device 14 200818359 6 base 6a side guide 31 thinner attachment detecting camera 32 bracket 33 Illumination unit 33a Support body 33b Lamp 41 First debris inspection unit, 42 Second debris inspection unit 41a First reflection 稜鏡 42a Second reflection 稜鏡 41b First inspection camera 42b Second debris inspection camera 43 Upper reflection 稜鏡44 lower reflection 稜鏡 44a extension 45 fragment inspection camera 51 head 52 light-emitting unit 53 light-receiving unit 54 spectral sensor 55 control unit W wafer 15