TW200816321A - Fast axis beam profile shaping for high power laser diode based annealing system - Google Patents

Abstract

A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and have a collimation direction along the fast axis. The optical source further includes a fast axis optical deflection element associated with selected ones of the rows of emitters and having one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.

Description

200816321 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention generally relates to heat treating a semiconductor substrate. In particular, the present invention relates to laser heat treated semiconductor substrates.

[Prior Art] Other substrates such as glass panels for the production of tantalum and other semiconductors may range from less than 250 ° C to higher than, for example, dopant implantation annealing, crystallization, phase deposition, and the like. The bulk circuit is heat treated on a germanium wafer or such as a display. The required temperature! 400 ° C, and can be used in a variety of processes, oxidation, nitridation, deuteration, and chemical gas. In the advanced integrated circuit, the shallow circuit characteristic structure and t, the extreme reduction of the total required to achieve heat treatment Thermal budget. The thermal budget can be thought of as the overall time required to complete the fabrication of the unit at high temperatures. The time at which the wafer is at its highest temperature may be short. The longer the wafer is at high temperatures, the more features (such as implanted joints) will diffuse and release their boundaries. For example, the depth of the implant joint may become deeper than expected due to diffusion. Rapid Thermal Processing (RTP) uses a fast-switching radiant lamp to heat the wafer separately without heating the rest of the chamber. Pulsed laser annealing using a relatively short (about 2 ns (one billionth of a second)) laser pulse actually heats only the surface layer without heating the underlying wafer, thus allowing for brief heating and cooling rates. Recently developed and sometimes referred to as thermal flux laser annealing or dynamic surface annealing (DSA), various methods are described in U.S. Patent Nos. 7,005,601 and 6,987,240, the disclosure of which is incorporated herein by reference. This is for reference. The DSa system uses a number of continuous wave (cw) polar body lasers to form a high-intensity beam with a very narrow beam line (bearn) (〇〇7 pen meters) and illuminate as a slender ray or beam line. Wafer. The beamline then sweeps across the wafer surface in the direction of the long side of the vertical beamline.

Thin beam lines (such as 〇·07 亳m) ensure that the temperature for warming and cooling is relatively short and that the time required to stay at the desired temperature (eg 13 〇〇 < t) is very short, and the beam line on the wafer surface Sweep over the fixed position. For example, if the scan rate is about 50-300 nm/sec, the temperature at the fixed position on the wafer surface will increase from 45 〇〇c to 13 〇 in 〇·6 亳 (ms). Hey. This has the advantage that the time at which the rounded surface is at a lower or medium temperature is extremely short, and the thermal conductivity of the crucible in this state is higher, thereby facilitating heating of the entire wafer, resulting in diffusion and loss of circuit structure delimitation. On the contrary, the rounded surface is at a predetermined high temperature (for example, 130 (TC) for a long time, and the thermal conductivity of the stone in this state is the lowest, so that the heating of the underlying characteristic structure can be reduced, and at this time, the maximum predetermined effect can be achieved (for example, The thin beam line corresponding to the amorphous damage before annealing, and the minimum resolution point size R ' of the laser beam optical system can be expressed by the following formula: R = λ/2 NA,

Numerical where λ is the laser wavelength and να is the numerical aperture of the optical instrument (Aperture). The numerical aperture is defined as: ΝΑ = nxsin(0/2), where η is the refractive index, and the angle e of the pair of beams is the lens aperture and focus in a simple or ideal system. In the above DSA system, the wavelength is 81 〇 nanometer 6 Ο Ο 200816321 (―, the angle θ is less than 60 degrees, and is the refractive index of air (approx.). These parameters provide the corresponding beamlet line (〇·〇7最小米) The minimum resolution point size R of the small width. In the preferred flower pot broadcast # #在又狂日1尤釆拎r field (5〇_3〇〇mm/sec), each fixed crystal The position of the round surface is at the highest point π is the same as / the degree of the dish (such as 1 300. The time of 〇 is shorter than 0.5 millisecond. The maximum temperature of the wafer surface is reached (13 〇〇. 〇 needs about 22 watts / square centimeter (kw /cm2) power density. Λ揸$, 丨μ 黎 厌 达到 To achieve this level, the DSA system uses multiple 810 nm CW diode snow oblique stereo lasers. One of the problems of the recent beam line is: t day age ^ / ν θ which is compared with the current residence time shorter than 0.5 亳 second, some annealing process needs 僖 @力畏古,— I 4 > stay at the last temperature or the highest temperature (1300 ° C) for a longer period of time. This is a good way to leave the door, "+ G and stay in Japan f The implanted dopant replaces the semiconductor crystal lattice; but it is not enough to use the ai 疋 无 无 无 无 无 疋 疋 疋 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无Before the dopant ions are implanted to form the shallow splicing surface, the slab is inserted to avoid the dynamic doping ion channeling through the predetermined junction, and the amorphous crystallization process is compared. Heavy atomic species ion bombardment s round and rape, Ding Shiqing day 0 to prevent the above-mentioned tunneling phenomenon, bombardment damage caused at least part of the main narrator main illusion active V body layer from crystalline state to amorphous form. When the wafer surface ^ # position is at about l3 〇〇 °C for a long time, the defects in the crystallization will be + u. The residence time is longer than the current 0.5 ft.. Go again, the helmet... The transformation of the region back into the crystalline state will essentially form a stupid layer in the crystal display, and the other types of defects, namely the boundary between the crystal and the surface of the surface of the day, will be trapped. Defects are more durable,... such boundary defects have been found And longer residence time to fully cure or 200816321 removal, such as staying at around 1300 ° C for 2 to 3 seconds. In order to provide such a long residence time, the beam spot size must be increased, which is essentially along the sweep The Cong direction (hereinafter referred to as the fast axis, ) expands the Gaussian profile of the beam intensity. However, when the Gaussian beam waveform is relaxed by a specific factor, the slope of the leading edge of the Gaussian beam is also nearly The same factor is reduced. This will increase the temperature rise (and cool down) time so that each position of the wafer surface is at a lower or medium temperature for a longer period of time, such that the quality of the device structure is reduced, for example, due to thermal diffusion. Therefore, it seems not feasible to relax the beam waveform along the fast axis. There is therefore a need for a DSA process that can anneal the boundary defects and other defects in the ion implanted wafer without degrading the quality of the device due to thermal diffusion. SUMMARY OF THE INVENTION A dynamic surface annealing apparatus for annealing a semi-conducting working body component includes: a working component support member for supporting a working mail amp and a dental component, a light source, and a relative axis along the fast axis A scanning device that scans the light source and the workpiece support. The light source includes a laser emitter array, and is arranged substantially in a row of emitters, and the rows and columns are transverse to the fast axis. A plurality of collimation 罝 Millennium lenses are positioned above the emitter array, and eight have a collimation potential along the fast axis to engrave the fat Μ 罝 direction. The light source further includes a fast axis polarizer associated with the selected emitter 4, and has one or a series of polarization angles corresponding to each of the hairpins 0 0 Μ #%仃 along the column The beam of the fast axis deviates from the angle. The ninth instrument focuses the light of the array of laser hair 1 onto the surface of the working part to form a sniper that crosses the fast axis. #德#备声和VU—(1) The first beam line, and the beam lines Separated along the fast axis by the angle of the first angle. 8 200816321 [Implementation] Introduction:

缺陷 Defects in ion-irradiated wafers at temperatures above 1300 ° 〇 over 0.5 ms can be annealed or cured by providing very long residence times (eg 2-3 sec) without abandoning along the fast axis The edge of the Gaussian beamline that is rushing up and down. The boundary defects caused by the amorphization process before the implantation and the annealing process after the implantation can be completely removed without causing improper heat diffusion. The set of lasers is focused onto the first beamline image, and the second set of lasers is focused onto the second beamline image. The maximum amplitude of the second beamline image is along the fast axis direction (ie, the vertical beamline) The length is offset from the maximum amplitude of the first beamline image. This displacement is preferably the width (half height) of the Gaussian waveform of the beamline along the fast axis and at half the maximum amplitude of the corresponding beamline. The beamline has the same highly focused image and the minimum resolution point size of the aforementioned 〇·〇 7 mm. The chord pair angle between the optical paths of the two sets of lasers is less than i degrees, thereby achieving such a small displacement 'and angle The laser depends on the spacing of the wafer surface. The end result is the same as the single beam line with the leading edge and trailing edge of the beam rising and falling along the fast axis, but the maximum temperature or left and right dwell time is a single beam. Two times the line. One of the laser beam lines is the leading beam and the other is the trailing beam. The leading beam needs to raise the wafer surface temperature from about 400 ° C to 1300 ° C in 5 ms. The ancient ^ has a large power density; while the trailing beam only needs to maintain the high temperature of the wafer surface (no need to increase the temperature), so it has a small power density. 9 Stylized application to the four groups of 200816321 is applied to the two groups The current of Lei #, Xi Dian Shi D Shi Shi can change the curvature of the surface of the wafer, and provide more sets of lasers that are respectively focused to the beam line (such as four beam lines). The current can be cut in half - and the J progress is fine-tuned. The DSA set up a DSA device example of the patent application mentioned above. N > Lifting frame structure 1 The barriers 12, u. One gold extension Μ two parallel hoisting crossbars 16, 18 疋 distance and fixed in a controlled by Luo Luo - recognizing the field, and supporting the fixed railings 12, Wo,,,, The motor and the .L VL ^ moving member are slid together with the fixed retainer 12 A 4 together with the roller. The light source 20 is slidable on the gantry rails 16, 18, # I 'The restraint can be hung under the crossbars 1, 6, and 18 that are controlled by the unpainted and driven members, to follow the crossbars 1, 6 or 1 stone wafer 22 or 1 from the 〆^, The fixed support of the material is in the gantry structure 1 (the light source 2 〇 includes a laser light source and an optical instrument (described later), and the fan-shaped light beams 24 and 25 that are emitted near and downward, respectively, are irradiated with the crystal 1 as Leading and trailing beam lines 26, 27 and extending substantially parallel to the solid 2 1 4 are referred to as "slow directions" for convenience. As follows; the first optical east line 27 is parallel to the first beam line 26 and the two are separated by # corresponding to the minimum resolution point size of the optical system. The method of achievement will be referred to in the instructions. Although not shown here, the hoisting structure may further include a seat 'to move the lightning-retained fixed position corresponding to the light laser in a direction substantially parallel to the fan-shaped beam 24 on the first pair of solid-series And the motor of the ball bearing the ground slides. Below. The second phase 22 is defined by the fixed rod, and the distance is described by the Z-axis source and 10

200816321 Optical instrument, in turn, controllably alters source 20 and wafer 22 while controlling beamline 26 to focus on wafer 22. The beam line 26 has a length of 1 cm, a width of, for example, 66 μm, and a power density of 220 kW/cm 2 . Alternatively, the light source and associated optical instrument can be supported by a solid substrate on a pedestal that is scanned two-dimensionally. In normal operation, the gantry rails 16 and 18 are fixed along the fixed position; 14 at a specific position, and the light source 20 is moved along the traverse rail to scan the beam line 26 perpendicular to its long side, 27, this sweeping is called "fast direction." Thereby, one side of the 'two beam lines 26, 27 is scanned to the other side and illuminates a 1 cm wide area on the wafer 22. The beam lines 26, 27 are narrow enough, and the scanning speed in the fast direction is such that the radiation of the beam lines 26, 27 is only briefly exposed. The maximum intensity of the wafer-specific i-beam is still sufficient to heat the surface area to change the high-temperature effectively heated wafer. The depth of 22 will be further used as a radiator and surface area. Once the fast scan is completed, the gantry rails 16, the rails 12, 14 are moved to the new position such that the beamline 26 moves in the direction of the long side of the slow axis extension. A quick scan of the adjacent strips on the circle 22 is then performed. Repeatedly alternating fast and pounds may be a snake-shaped path of light source 20 until the heat treatment is complete. Light source 20 includes a laser array for obtaining the desired high brightness (220 kW/cm2). The optical system described below converges the laser array beams in parallel and parallel beam lines, each beam line being 66 microns wide. A suitable system is shown in Figures 2 and 3, in which the two systems of the optical system 30; the spacing and the length, for example, the degree is, for example, the fixed rod, and the rotten rods 1, 2, 16, 18, etc. are drawn from the wafer 22 Long strip area. Fast enough to make i domain, but light. However, without rapid cooling 1 8 along the solid along its edge to illuminate the crystal slowly, the wafer 2 2 is the power of the dense focus into a two-phase optical f-bar stack (bar 11 200816321 stack) 3 2 produces about 810 Nai The laser light of the meter; FIG. 4 is an end plan view of a laser bar stack 32. Each of the laser bar stacks 32 includes n parallel strips 34 that substantially correspond to the vertical of the gallium arsenide (GaAs) semiconductor structure. [η joint, lateral extension of about 1 cm and separated by about 〇·9亳. The water cooling layer is typically placed between the strips 34. Each strip 34 has 49 emitters 3 6, which respectively form separate GaAs laser emitting beams and the divergence angles of the beams in the right angle direction are different. The long sides of the strips 34 are arranged to extend over a plurality of (the emitters 36 and are arranged in a row along the slow axis, the short sides of which correspond to pn depletion layers of less than 1 micron and the depletion layers are arranged along the fast axis. The small light source size in the direction allows for efficient alignment along the fast axis. The divergence angle in the fast axis direction is large and the divergence angle in the slow axis direction is small. Back to Figures 2 and 3, independent semi-cylindrical lenses (iensiet) 4〇 is disposed above the separate laser strips 34 to collimate the laser beam along the fast axis to form a fine beam of light. The lens 40 can be adhered to the laser beam stack 32 by adhesive and aligned with the strips 34. And extending over the emission area (transmitter 36). As described in the following description, the 'partial laser strip 34 and its lens 40 cover the upper 稜鏡Q 44 ', which deflects the light by 1 degree or less to form the second figure of FIG. (tailing) beam line 27 ° the angle of the prism 44 and the amount of displacement between the two beam lines 26, 27 relative to the ratio of the 1st - 4th figure is infinitesimal, so the size in the figure has been greatly enlarged so that the pattern is slightly It can be seen that the light source 20 can further comprise a conventional optical component. The conventional optical component can include Interleaver and polarization multiplexer, which are merely illustrative, and other optical components are available to those skilled in the art. In the embodiments of Figures 2 and 3, the two sets of beams from the two laser beam stacks 32 are Input interleaver 42 having 12 200816321 multiple beam splitter type structures with special coatings (eg parallel wave bands) on the two diagonal interfaces for selective reflection and penetration of light. Such interlacers from Research Electro Optics (REO). In the interleaver 42, the metal reflected wave bands form the slopes of the respective sets of light provided by the laser beam stack 32, alternating the beams from the strips 34 of the strip stack 32. Or penetrate, and the beam $ from the strip 34 on the other side of the strip stack 32 also undergoes selective penetration/reflection, thereby filling the spaced radiation pattern from the independent hair 30. 〇' The first set of staggered beams The polarization is rotated by a half-wave plate 4 8 with respect to the interlaced beam. Both sets of interlaced beams are input to a polarization multiplexer (PMUX) 52 having a dual polarizer structure. Such PMUX is commercially available from Laser Inc. The oblique first and second interface layers 54, 56 enable two sets of light Coaxial reflection along its front side. The first interfacial layer 54 is typically used as a dielectric interference filter for the reflector (HR), and the second interfacial layer 56 is used as a laser wavelength polarizing beam splitter (PBS). Dielectric Interference Filter Here, the first set of staggered beams reflected by the first interfacial layer 54 illuminate the back side of the second boundary £6. As the half wave plate 48 causes rotational polarization, the set of staggered beams will pass through the second interface layer 56. The output 58 of the PMUX 52 output is twice as strong as the intensity of any of the interlaced beams. Although illustrated in different figures, the interleaver 42, half * 48, and PMUX 52 and its interface layers 54, 56, and additional filters that can be mounted on the output and output faces, can generally be made, such as by ultraviolet light. The (uv) epoxide plastic packages are bonded together to form a rigid optical system. There is a plastic contact between the lens 40 and the laser beam stack 32, which is used to reflect the L-missing of the reflection-purchased pattern beam, and the two-beam splitting CVI of the emitter is staggered as hard. Such as the surface layer of the first source of light wave plate into the surface curing system of the standard strip 13 200816321 34. The source beam 58 passes through a set of cylindrical lenses 62, 64, 66, and the source beam 58 is focused along the slower.

The one-dimensional light pipe 70 homogenizes the source beam along the slow axis. The source beams focused by the apertures 62, 64, 66 enter the tube 70 along the slow axis at a finite convergence angle and are substantially parallel to the fast axis. The light pipe 70 is more clearly shown in a perspective view of Fig. 5 as a beam homogenizer for reducing the beam structure introduced by the plurality of emitters 3 6 along the slow axis on the slow axis. The light pipe can be used as a rectangular glass plate 72 with a large enough refractive index to form 4 total reflection. Its short side is the slow axis of the edge, and the long side is along the fast axis. The glass 7 2 extends along the optical axis 74 of the source beam 58 to a substantial distance, and the source light 58 converges along the slow axis to the input face 76. The source beam 58 is reflected several times between the top and bottom surfaces of the glass sheet so that when it exits the output surface 78, a number of structures along the slow axis and homogenization of the beam along the slow axis can be eliminated. The beam 58 is then sufficiently collimated along the fast axis (using a rounded lens 4〇), while the glass plate 72 is wide enough that the source beam 58 does not reflect on the sides of the glass plate 72, but remains along the edge. The alignment direction of the fast axis. The light pipe 70 can be tapered along its axial direction to control the entry and exit paths, and the beam converges and diverges. The one-dimensional light pipe can be used as a two-parallel reflection to substantially correspond to the top and bottom surfaces of the glass plate 72 through which the source beam passes. The source beam output by the light pipe 70 is substantially uniform. The mirror beam 70 is transferred to the source glass hole as further illustrated in FIG. 6 , the lens lens group or the optical instrument 8 〇, the slow axis wheel is emitted, and the substantially spherical lens is included to project the projection. Beamline 26 is on wafer 22. The imaging optical instruments 8〇, 82 shape the two-dimensional beam into a narrow beam line of defined length. In the fast axis direction, the input 82 is pre-extracted 14 200816321 The light is given to the instrument at the source end of the light pipe with an infinite conjugate system (infinite (3) njugate ) (but the system can also be designed as a finite source conjugate and on the wafer 22 The image plane end has a finite conjugate system; in the slow axis direction, the output light to the instrument has a finite total light system at the source end of the light taste 70, and has a finite conjugate system at the image plane end. In addition, in the slow axis direction The light pipe 70 is used to homogenize the uneven light emitted by the plurality of laser diodes of the laser strip. The homogenization ability of the first tube and the 70 is closely related to the number of times the light passes through the light pipe 70. The number depends on the length of the light pipe 70, the direction of the thinning (if any), the size of the entrance and exit apertures, and the angle of the incident light pipe 70. The imaging optical instrument focuses the source beam into a beamline of a predetermined size and A programmable optical waveform projected between the surface 0 of the wafer 22 and the Wentang waveform: _ Referring to Figures 6 and 8, a set of laser strips 34 (e.g., spacer strips 34) illuminate the corresponding cylinder The lens 4 is snaking against the optical instrument (interleaver 42, polarization multiplexer 52) The remaining laser strips 34 illuminate the corresponding cylindrical passages (J mirror 40 and independent turns 44 respectively located on the lens 40. Each turn 44 is rotated about the central axis parallel to the fast axis. The beam is deflected by 1 degree / (angle A) to generate a polarized beam of vertical fast axis. The first set of laser strips 34 that are not deflected by the beam produces a leading beam 24. The beam is deflected by each of the turns 44 The two sets of laser strips 34 produce trailing beams 25. The perspective view of Fig. 7 shows two laser strips 34 constituting two parallel emitters 36, both of which cover the upper cylindrical lens 40, and the lens 40 A cover 稜鏡 44. Figure 8 shows the waveform control of the control current supply 1 〇 2, 104 15 200816321 Ο

How the controller 100 independently controls the power density of the leading beam 24 and the trailing beam 25, and the current supplies 102, 104 drive the emitter 6 of the spaced-off strips 34. The current supply 1 〇 2 is the front beam current supply, It is coupled to a laser strip that is not covered by any of the turns 44. The second current supply 104 is a trailing beam power supply because it is coupled to a laser strip covered by the crucible 44. Each of the turns 44 deflects the corresponding laser beam to form a trailing beam 25. The distance separating the leading beam 24 from the trailing beam 25 imaged on the wafer 22 by a beam line 26, 27 (Fig. 1) depends on the angle of polarization of the crucible 44. The , front, and, and, trailing, and the like also apply to embodiments in which the beam sweeps across the wafer in a particular direction. If the scanning direction is reversed, the deflected beam will form a leading or, front, and beam line 26, while the undeflected beam will form a trailing beam line 27. Any of the modes of the present invention can be implemented, so that the terms "front," and ", trailing," etc. are interchangeable in the embodiment of Fig. 6. In operation, the power density of the trailing beam line 27 may be significantly smaller than that of the front beam line 26. Power density. This is because the front beamline 26 must have sufficient power density to rapidly increase the wafer surface temperature from the lower temperature range to the highest temperature, while the lower temperature range of the wafer is more thermally conductive, so that the beamline is only It is necessary to maintain the temperature rise of the surface of the circle as shown in Figure 9. The trailing light is on the leading beam line. The second temperature, so the maximum power of the beam line of the fast axis waveform smaller than the predetermined maximum temperature beam line is harder to heat the surface. Trailing power density to prevent crystals (1300 ° C). Therefore, as the maximum power density is significantly small, the density difference is set by the waveform controller 1 第 of Fig. 8. Continued trailing light 'Laser strips 1 0 The illustrated embodiment provides several (i.e., four) bundles whose power densities can be independently adjusted. In Figure 16, 200816321, the objects 34 are divided into four groups. A set of laser strips 34-〇 are produced without bias. The laser beam forms a front beam. Another set of laser strips 3 4 -1 produces a first trailing beam of light that is deflected by a small angle of 稜鏡 44-1 to form a first trailing beam. 34-2 produces illumination at a deflection angle a2 of the crucible 44-2, and the angle A2 is greater than the angle Al. A further set of laser strips 34_3 produces illumination at a deflection angle A3 of the crucible 44-3, and the angle As More than the angle a2❶4 beam lines 26-1, 26-2, 26-3, 26-4 (the U-picture) are focused to the crystal by an optical instrument (interleaver 42 of the second figure, polarization complex 52, etc.) On the circular surface, in the special case where the four beam lines 26-1, 26-2, 26-3, and 26-4 have the same power density, as shown in Fig. 11 , the power density waveform along the fast axis has the same The Gaussian shape 'but shifts the same peak-to-peak displacement along the fast axis. This displacement depends on the successive polarization angles A1, Ay A" of the 稜鏡 441, 44_2, 44 3 , angles ι, a2, A3 are beams selected such that the peak-to-peak displacement of adjacent beam lines is at least approximately equal to (if not equal to) a single beam line (eg, the beam line of the front beam) Aspect (as shown in FIG. 9). Again as before, this displacement can correspond to the minimum resolution point size of the beam. The angle of polarization is less than... and can't actually be perceived from the first map. For clarity, the angle of Figure 10 has been enlarged. The power density generated by the different sets of laser strips 34-0, m, 34_2, 34·3 can be independently adjusted by the laser power controller 11 ,, which individually supplies the supply currents 1〇, Ιι, I2, Ι3 to each Laser strips 34_〇, 34^, 34-2, 34-3. Therefore, the laser power controller 11 controls the fast axis power density waveform generated by the laser array. Despite the power density waveform of the power density map, according to the various power density waveforms of the figure = 17 200816321, the power of the trailing beam line is dense to lead the beam line. The controller 110 can adjust the continuous beams 1 〇, Ιι, 12, 13 to produce a power density ladder waveform as in Fig. 11B, or a single ladder waveform as in Fig. 11C, or as a ladder waveform. In another embodiment, as shown in Figure 1 1 E, the front or leading beamline may fall behind, and then rise from the third beam-beam line. Although the pattern is not shown, the waveform is more 0 liters of ladder waveform instead of the falling ladder of Figure 11B-11D. Figure 12A shows the preferred power density of the continuous beam line. 1 2 A is shown on the wafer surface. The power density at a particular location varies with the situation. (If Figure 12A is converted to plot the distribution of power density to the fast axis of fixation, the graph will have the highest maximum power density for the leader beam line 26_1 depending on the unit of choice, while the beam lines 26-2, 26_3, 26 The maximum power density of the -4 is smaller. The powerful leading beam line 26-ι in Figure 12A has sufficient depth to overcome the high thermal conductivity of Shi Xi, so the wafer can be heated quickly (J 1300X: followed by the trailing beam line) 26-2, 26-3, 26-4 power density 'but sufficient to maintain the wafer position at 13 ° C and ' ° C. Figure 12B shows the temperature of the same wafer surface position due to the beam waveform over time In the case of change, the temperature rises from 400 C to 1 3001: and then the position remains at 3 ms' and the temperature corresponds to the peak of successive beams. After the microwave seconds, the temperature is the same as the trailing edge of the last beam line. Figure 12B shows the DSA annealing process after ion implantation

The degree is preferably less than the line supply current. The slower amplitude waveform of the 11 D map can be changed to the upper shape at the end of the beam line. Waveform diagram. The fixed time point of the first time change remains unchanged. Successive trailing, each with its own power-tight surface position up to a smaller than 1300, the leading edge of the beam of Figure 12A sways at approximately 1 300 °C. About 3 亳 & to 400 ° C 〇 Use section 12A 18 Ο

200816321 The beam effect of the beam when the beam is pulsed. During the initial time interval (T1), the semi-conducting enthalpy is damaged from the bombardment caused by the conductor material, and the thousand V body material is partially shielded. During the time interval m), during the conversion of the planting form into crystals ("), it will be formed in the crystal... 曰巴: body-div. in the time interval. The β-graph edge shows the boundary defect of this type Solid when the surface of the amorphous semiconductor is "...the boundary region of the boundary defect may not be perfectly aligned at its boundary, and the first one is turned on. - ^ V causes misalignment defects to form. This defect may need to be fully annealed or cured at 130 TC for 3 sec (the same as (the overall time for multiple beams P in Figure 12A). The 14th enamel line will be used to form the pole 彡pN junction. (9) Ion implantation process such as cloth (4)^ source/drain extension of the circular surface. The structure to be formed is shown in Fig. 13, where the source/drain extension of ion implantation is 21〇, 215 Between the deep source/drain contact regions 2〇〇, 2〇5 and the semiconductor channel region 220, the channel region 220 is located under the gate 225, and is connected to the gate 225 by the thin gate dielectric layer 230. Separated. In the first step of the process of Figure 14 (block 25 0), heavy ions (such as oxygen, nitrogen, carbon, helium) are used to strike the wafer to break the crystal bond, so that the top surface of the wafer is 235. The surface region extending to the horizontal dashed line 240 is converted from a fully crystalline state to an at least partially amorphous state. The energy of the ion bombing is such that the ions in the wafer extend downwardly and the dashed line 240, and actually terminate at the dashed line 240. The shaping step is to avoid the tunneling effect of the dopant ions to be implanted in the next step. The tunneling effect may occur in the hair growth. A circular, regular crystalline structure, thus converting a crystalline structure deep enough (corresponding to the dashed line 24 of Figure 13) into an amorphous structure prevents channeling. 19 200816321 The next step (block 255 of Figure 14) is a cloth blending For example, source/dipole extension regions 2 1 0, 2 15 may be formed. The dopant may be bismuth (A s), dish (p), boron (B), or other substance. This step may include masking. a step of masking the area of the wafer that is not to be implanted in this step. The ion energy is selected such that the distribution of the implanted ions does not exceed a predetermined depth, such as the source/negative extension 2 1 0, 2 1 5 Very shallow depth. Depending on the situation, the light absorbing layer can be deposited onto the wafer surface (block 260 of Figure 14) before performing the DSA process using the device of Figure 1.10. The implementation of this step can be based on low temperature. A plasma process and apparatus, which is described in U.S. Patent Application Serial No. 11/131,904, filed May 17, 2005, entitled "Semiconductor junction forming method including low temperature plasma deposition light absorbing layer and high speed optical annealing (A SEMICONDUCTOR) JUNCTION FORMATION PROCESS INCLUDING LOW TEMPERATURE PL ASMA DEPOSITION OF AN OPTICAL ABSORPTION LAYER AND HIGH SPEED OPTICAL ANNEALING)", Kartik Ramaswamy et al., and the application to the owner. The light absorbing layer may be, for example, amorphous carbon. The next step (block 270) is A scanning laser DSA process is performed using a plurality of beam lines having a shapeable beam waveform. The first sub-step of this step (square 'block 271) is to use the steep leading edge of the front beamline 26-1 (Fig. 12A) to bring the temperature of the recently encountered wafer surface point (or line formed by the dot) from The ambient temperature at 400-450 °C is rapidly increased to 13 °c. The next sub-step (block 272) is to maintain the wafer temperature at 1 300 ° C for a sufficient period of time (eg 3 ms) to (a) recrystallize the amorphous surface area, (b) replace the implant dopant Crystalline crystals 2008 200821 21, and (C) boundary defects between the solidified recrystallized region and the underlying crystal. The last sub-step (block 2 7 3 ) is to use the trailing edge of the steep trailing beam of the last trailing beam line 2 6 - 4 (Fig. 1 2 A) to quickly lower the temperature of the surface point. Figure 15 shows the eighth figure. A variant embodiment in which the cymbal 44 is replaced by a separate mirror 121, 122, 123, and the mirrors 121, 122, U3 are deflected from the beam of the spaced laser strip 34 and the v rib of the embodiment of Fig. 8 The mirror 44 is deflected in the same manner. If the polarization angle is A, the angle of the beam direction of each of the mirrors 121, 122, 123 with respect to each of the laser strips 34 is A/2 〇 Fig. 16 A simplified view of the embodiment of Figure 15, wherein a single optical element 120, which may be a mirror or a cymbal, deflects a beam of light from a series of laser strips 3 4-1, 34-2, 3 4-3, etc. to produce a trailing The beam line, while the first beam from the other laser strips 34-4, 34-5, 34-6 is also deflected to form a leading beam line. When the optical element 120 of Figure 16 is Mirror, not 稜鏡, 'If the polarization angle is A', as in the embodiment of Figure 15, the optical element 出来 is out of the ray of each laser strip 3 4 Shi * μ it -

The angle of the beam direction of the field is Α/2. Figures 17 and 18 show the 7th β. A modified embodiment of the door, alpha and eight figures, wherein the prism 44 is omitted, and the different (i.e., alternating) semi-cylindrical lenses 40 of θh α / are rotated by an angle of rotation A. The cylindrical lens 4〇 selected by the rotation of the &amp; is the same as the polarization behavior of the 7th and 8th rounds. The semi-cylindrical lenses 40 are respectively mounted on the respective laser strips 34 and produce a predetermined beam direction for the yttrium, and then bonded to the laser strips, preferably A ΤΤΛ, and the horse uses a UV curable epoxide. Thus, half of the lenses 40-1, 4〇q^r, , and 40-5 are aligned with the beam direction deviating from the angle a, and the remaining lenses 4〇_2, μ /1 Λ 2, 4〇_4 40.6 is aligned to provide the direction of the beam that has not deviated from 21 200816321. Fig. 19 is a modified embodiment of the first drawing. The 稜鏡44-1, 44-2, and 44-3 in which the polarization angles are sequentially increased are omitted, and the polarizing function is changed to the corresponding semicircular 枉 lens. -2, 4 0-3 Rotation successively becomes larger angles Αι, A2, A3. Lens 40-0 remains unrotated, thereby providing four consecutive polarization angles 〇, Al, A2, As. This is the same as the continuous polarization angle P degree provided by the optical instrument (interleaver 42, polarization multiplexer 52) in the first embodiment. Fig. 20 shows a modified embodiment of Fig. 10, in which the ridges 44-1, 44-2, and 44-3, in which the polarization angles are sequentially increased, are respectively mirrors 120-1 and 120-2 whose rotation angles are successively increased. 120-3 is substituted instead to deflect the light beams from the laser strips 34-1, 34-2, 34-3. The beam from the laser strip 34-0 is not deflected to provide four consecutive polarization angles 〇, Ai, 八2, As. This is the same as the continuous polarization angle provided by the optical instrument (interleaver 42, polarization multi-guard 52) in the embodiment of Fig. 10. While the present invention has been described in its preferred embodiments, it is not intended to limit the invention, and it is to be understood that the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing a hot-melt laser annealing apparatus used in the present invention. Figures 2 and 3 are perspective views of the optical 22 200816321 assembly of the apparatus of Figure 1 from different perspectives. Figure 4 is a partial semiconductor mine in the device of Figure 1: face view. Fig. 5 is a view of a homogeneous light pipe for the apparatus of Fig. 1. Fig. 6 is a schematic view corresponding to Figs. 2 and 3. Fig. 7 is a view showing a beam source of an embodiment of the present invention. Fig. 8 is an end view corresponding to Fig. 7, and a controller for the fast axis power density waveform of the two beam lines. Figure 9 is a pictorial diagram of the apparatus of Figures 7 and 8. Figure 10 is a schematic diagram of another embodiment of the present invention. The program fast axis waveform replaces the Gaussian beam. Sections 11 to 11 are diagrams of various fast-axis power densities. Programmable controller selection for DSA equipment in the figure. <12A is a diagram showing the power density waveform of the DSA equipment generated by the DSA equipment in Figure 1. Fig. 12B is a view showing the case where the fixed point temperature on the map generated at the same time as Fig. 12A is due to the power density wave of Fig. 2A. Figure 13 is a side view showing the wearing of the DSA apparatus of the present invention.

Fig. 14 is a view showing a white polarizer of the first modified embodiment of Fig. 8 in which the DSA of the apparatus of Fig. 10 is used. The end of the array is flat 6-dimensional view. ^ Department perspective. It is also shown to change the fast axis power density ripple, which uses a number of waveform diagrams, which can be described by the &gt; time-varying shape, showing the wafer shape and the process of the semiconductor device changing with time. Schematic diagram of a spoon, which uses 23 200816321 Figure 16 is a schematic view of a second variant embodiment of Figure 8, which uses a single polarizer. 17 and 18 illustrate a third modified embodiment of Fig. 8, wherein the selected fast-axis collimating cylindrical lens is rotated by a predetermined polarization angle. Fig. 19 is a view showing a first modified embodiment of Fig. 10, in which the corresponding fast-axis cylindrical lens is rotated by an angle which is successively enlarged to replace the ridge which becomes larger in order of the partial and optical angles. Fig. 20 is a view showing a second modified embodiment of Fig. 10, in which the polarizing mirrors are rotated by successively increasing angles, respectively, instead of the pupils whose polarization angles are gradually increased. [Main component symbol description] 10 Lifting frame structure 12, 14 Railing 16, 18 Crossbar 20 Light source 22 Wafer 24, 25 Beam 26, 26-1, 26-2, 26-3, 26-4, 27 Beamline 〇30 optical system 32 stacks 34, 34-0, 34-1, 34-2, 34-3, 34-4, 34-5, 34-6 strips... 36 emitters 40, 40-0~40 -6, 62, 64, 66 Lens 42 Interleaver 44 &gt; 44-1 ' 442- ^ 44-3 稜鏡 48 Wave Plate 52 Polarization multiplexer 54, 56 Interface layer 58 Source beam 70 Light tube 72 Glass plate 24 76 Input 200816321 74 Optical Axis 78 Output Face 80, 82 100, 110 Controller 102, 104 120 Optical Elements 120-1, 120-2, 120-3 &gt; 121, 122, 123 200, 205 Contact Areas 210, 215 22 0 channel area 225 gate instrument current supply mirror extension 〇 230 gate dielectric layer 240 dashed line 235 top block / step, 13 current 250, 255, 260, 270, 271, 272, 273 A, Αι, A2 A3 Angle I〇, Ιι, 12 u 25

Claims (1)

200816321 X. Patent application scope: 1 · A dynamic surface annealing device for annealing a semiconductor working part, the overseas Chinese comprising at least: a working part branch member for supporting a working part; a light source; and scanning The device is configured to scan the light source and the working component support relative to each other along a fast axis; Ο CJ, wherein the light source comprises: w an array of a plurality of laser emitters, arranged substantially in a row of the pirates, And the plurality of collimating lenses are located above the rows of the emitters and have a collimating direction along the fast axis; a component, and the emitting The fast axis polarizers associated with the rows and columns of the device have a polarization angle corresponding to the selected one of the rows: the beam is offset from the angle of the beam along the fast axis - the optical device makes the mine A ray of the emitter array is focused into a fine beam line on a surface of the rabbit 1 in a direction transverse to the fast axis. The apparatus of claim 1, wherein the optical device generates the light of the selected one of the emitters on the working part a beam line, ^ y from and from the remaining rows of the emitters to produce a second beam 26 200816321 line on the surface of the working unloading member, the first and second beam lines Parallel to each other, transverse to the fast axis, and offset from each other by a distance along the fast axis, the distance corresponding to the polarization angle. 3. The apparatus of claim 2, wherein one of the first and second beam lines is a leading beam and the other is a trailing beam. 4. The device of claim 1, further comprising: a fast axis beam waveform controller; a first current source coupled to supply the array of the emitters not covered by the fast axis polarizing element And a second current source coupled to supply the array of the emitters covered by the fast axis polarizing element. 5. The apparatus of claim 4, wherein the fast axis beam shape controller is programmed to independently adjust the output of the first and second current sources according to a predetermined fast axis power density waveform size. 6. The apparatus of claim 5, wherein the first and second current sources respectively set a power density of a leading beam line and a trailing beam line on the surface of the working component. 7. The device of claim 2, wherein each of the beam lines 27 200816321 corresponds to a minimum resolution image size along a width of the fast axis. 8. The apparatus of claim 7, wherein the polarization angle is such that the first and second beam lines are offset along the fast axis by a distance corresponding to a minimum resolution image size. The device of claim 8, wherein the offset distance is a half-maximum Gaussian width 之一I of the one of the beam lines along the fast axis. The device of claim 1, wherein the fast-axis polarizing element comprises a polarizer disposed on an optical path of the array of the plurality of subsequent emitters. II. The device of claim 1, wherein the fast-axis polarizing Cj element comprises: a plurality of polarizing elements disposed on the selected ones of the plurality of rows of the emitters, each of the polarizing elements having a beam deflecting the beam The device of claim 11, wherein each of the polarizing elements is a turn disposed above the collimating lenses of one of the emitters. The apparatus of claim 11, wherein each of the polarizing elements is a mirror disposed on an optical path corresponding to one of the rows of the emitters. 11 items The device, wherein the polarizing elements are each one of corresponding collimating lenses, and the collimating lens is rotated through a corresponding polarizing angle. 1 5 · The device according to claim 1 The fast axis polarizing element comprises: a plurality of polarizing elements disposed above the selected rows of the emitters, each of the polarizing elements having a series of consecutive beam deviations corresponding to one of the fast axes The apparatus of claim 15, wherein the polarizing elements are a plurality of turns, and the plurality of turns are disposed in the corresponding rows of the emitters. Above the collimating lenses, and the plurality of consecutive cymbals have a series of polarizing angles. 17. The device of claim 15, wherein the polarizing elements are a plurality of mirrors, and the mirrors are disposed at The optical paths of the corresponding rows of the emitters, and the successive mirrors are sequentially turned to provide a series of polarization angles of 29,163,321. 18. As described in claim 15 The plurality of polarizing elements are each corresponding to one of the collimating lenses, and the collimating lens is rotated through one of the series of polarizing angles. - 19. For example, claim 15 The apparatus, wherein the optical device (the light rays from the arrays of the different or different emitters) generate a continuous beam line on the surface of the working component, the continuous beam line corresponding to The series of polarization angles of the polarizing elements, the adjacent beam lines are parallel to each other, transverse to the fast axis, and offset from each other by a distance along the fast axis, the distance corresponding to the series of polarization angles A difference. 20. The device of claim 15, further comprising a fast axis beam shape controller and a plurality of independently adjustable current sources coupled to supply and corresponding to the The array of emitters associated with one of the polarizing elements. The apparatus of claim 20, wherein the fast axis beam waveform controller is programmed to independently adjust the output magnitude of the current sources based on a predetermined fast axis power density waveform. 22. The apparatus of claim 19, wherein the series of polarization angles of 30 200816321 provide a beam-to-beam displacement along the fast axis, the displacement corresponding to a minimum resolution point size. 2. The apparatus of claim 19, wherein the series of polarization angles provides a displacement of the beam along the fast axis to the beam, the displacement corresponding to one of the beam lines The Gaussian half-height - wide of the fast axis. The device of claim 1, wherein the fast-axis polarizing element comprises a polarizing aperture positioned in an optical path of the successive rows of the plurality of emitters. 〇 31