200812127 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種疊合式電子裝置及其製造方法。 【先前技術】 傳統上，如欲將具不同特性的元件（例如：電容（c)、電 感（L)或電阻（R))整合成某一模組（例如：LC濾波器），一般 多使用高溫共燒陶曼（High-Temperature Co_fired Ceramic; HTCC)或低溫共燒陶变（Low_Temperature Co-fired Ceramic; LTCC)共燒技術，然而共燒技術開發成本高且設備成本亦相 當局。 以傳統共燒方式製作LC濾波器為例，不僅電感與電容材 料間會產生不想要的反應，且由於兩材料熱脹冷縮率不同 導致共燒後會產生翹曲或接合不良之情況，因而製造良率 較低。一般電感燒結溫度在900°C以下，多使用銀為内電極 材料，而變阻器燒結溫度高達1000°C〜1200°C，内電極需使 用鈀或鉑等高溫材料。且傳統的LC濾波元件不具有ESD防 護功能，使得在應用上無法使用於ESD可能發生的位置。 中華民國專利公告第94207583號新型專利曾經揭露一種 以共燒方式製作具電磁干擾（EMI)防制及靜電放電（ESD)保 護功能之裝置，然其電感部份也必須使用昂貴的鈀或鉑等 高溫材料作為内電極，成本大為提高，且一樣具有容易因 内部電感與變電阻材料反應而導致不易掌握所製作出之裝 置的特性之問題。 中華民國專利公告第435003號發明專利曾經揭示一種不 113144.doc 200812127 透過上述傳統共燒方式而製作Lc濾波器之方法，該方法係 利用低溫用熱導膠（例如··環氧樹脂、低溫玻璃或矽類化合 物）將已分別獨立製作之電容與電感黏合。然而此先前技術 文限於其所使用之熱導膠，僅能在低溫進行此製程，因而 接者面之結著力及元件強度均較弱，且後續僅能在低溫形 成端電極及進行電鍍製程時僅能使用低溫材料作為保護 層0200812127 IX. Description of the Invention: [Technical Field] The present invention relates to a laminated electronic device and a method of manufacturing the same. [Prior Art] Traditionally, if components with different characteristics (for example, capacitor (c), inductor (L), or resistor (R)) are integrated into one module (for example, LC filter), it is generally used. High-Temperature Co_fired Ceramic (HTCC) or Low_Temperature Co-fired Ceramic (LTCC) co-firing technology, however, the co-firing technology has high development cost and equipment cost. Taking the conventional co-firing method as an example, the LC filter not only generates an undesired reaction between the inductor and the capacitor material, but also causes warpage or poor joint after co-firing due to the difference in thermal expansion and contraction ratio between the two materials. Manufacturing yield is low. Generally, the inductor sintering temperature is below 900 °C, and silver is often used as the internal electrode material, and the varistor sintering temperature is as high as 1000 ° C to 1200 ° C, and the internal electrode needs to use a high temperature material such as palladium or platinum. Moreover, conventional LC filter components do not have ESD protection, making it impossible to use in applications where ESD can occur. The new patent of the Republic of China Patent No. 94207583 discloses a device for producing electromagnetic interference (EMI) protection and electrostatic discharge (ESD) protection by co-firing, but the inductive part must also use expensive palladium or platinum. The high-temperature material is used as an internal electrode, and the cost is greatly improved, and the same problem is that it is easy to grasp the characteristics of the fabricated device due to the reaction between the internal inductance and the variable resistance material. The invention patent of the Republic of China Patent Publication No. 435003 discloses a method for fabricating an Lc filter by the above-described conventional co-firing method, which utilizes a low-temperature thermal conductive adhesive (for example, epoxy resin, low-temperature glass). Or terpenoids) Bonding capacitors that have been independently fabricated to the inductor. However, this prior art is limited to the thermal conductive adhesive used therein, and the process can only be performed at a low temperature, so that the bonding force of the contact surface and the strength of the device are weak, and the subsequent formation of the terminal electrode and the electroplating process can be performed only at a low temperature. Only low temperature materials can be used as the protective layer.
【發明内容】 本發明提供-種疊合式電子裝置及其製造方法，該裝置 由複數個元件疊合而成。該製造方法特點在於在各別燒結 該等元件後’將—或更多高溫接合材料分別置於該等元件 中兩兩相鄰之元件間。之後將該等元件與該或該等高溫接 合材料-起置於溫度範圍為灣至戰之高溫環境’以 使該或該等高溫接合材料於該等兩兩相鄰之元件間熔融以 將该等元件結合成一疊合式結構。 本發明於高溫（30(TC至9〇〇。〇結合各元件，因而可提供 70件間接著面較大的接著力及提昇強度。而且，高溫接合 t枓具較佳的防水性，可提昇所製造疊合式電子裝置的可 罪性H由於在高溫進行黏合，後續製程可使用高溫 T為端電極材料’高溫銀較低溫銀具有較低的阻抗，可承 :較高的能量通過’大幅提昇端電極的耐電壓性。而且， 向溫銀有較低的寄生電减，製 寄生電感發生。 1作遽“時可減少非預期的 溫環境（3001：至 除此之外，本發明進行元件結合時的高 113144.doc 200812127 900°C )僅會使結合反應發生在已經燒結的元件接觸表面 並不會產生如傳統共燒技術（所需溫度通常較高）各元件『 易有翹曲與接合不良的問題。SUMMARY OF THE INVENTION The present invention provides a stacked electronic device and a method of fabricating the same, which are formed by laminating a plurality of components. The manufacturing method is characterized in that - or more high temperature bonding materials are respectively placed between two adjacent elements in the elements after each of the elements is sintered. The elements and the high temperature bonding material are then placed in a high temperature environment in the temperature range of the bay to cause the or high temperature bonding material to melt between the two adjacent elements to The components are combined into a stacked structure. The invention combines various components at a high temperature (30 (TC to 9 〇〇. 〇, thus can provide a large adhesion between 70 pieces of joint surface and enhance the strength. Moreover, the high temperature joint t cooker has better water repellency, can be improved The sinus H of the fabricated electronic device is bonded at high temperature, and the subsequent process can use the high temperature T as the terminal electrode material. The high temperature silver has lower impedance and lower temperature, and the higher energy can be greatly improved. The voltage resistance of the terminal electrode. Moreover, the parasitic inductance is reduced to the warm silver, and the parasitic inductance occurs. 1 "The 可" can reduce the unintended temperature environment (3001: In addition to this, the present invention performs components The high 113144.doc 200812127 900 °C when combined) only causes the binding reaction to occur on the contact surface of the sintered component and does not produce the same components as the conventional co-firing technique (the temperature is usually higher). Poor joint problem.
按照本發明之一具體實施例，製造疊合式電子裝置的方 法包含下列步驟：各別燒結該等元件；將一或更多高溫接 合材料分別置於該等元件中兩兩相鄰之元件間；將該等元 件與該或該等高溫接合材料—起置於溫度範圍，為3崎: _°c之高溫環境，以使該或該等高溫接合材料於該等兩兩 相鄰之元件間熔融以將該等元件結合成—疊合式結構；及 形成至少二端電極於該疊合式結構之至少一表面。 按照本發明之另一具體實施例，疊合式電子裝置包含： 複數個兩兩相鄰之燒結過元件；—或更多高溫接合材料， 其分別置於該等兩兩相鄰之元件間，使得經置於溫度範圍 為30(rC至戰之高溫環境後’該等元件結合成一疊人式 結構；及至少二端電極，其置於該疊合式結構之至少一表 面0 【實施方式】 現在本發明將利用所附之圖式在以下加以詳細陳述之， ’、、、’丁出#χ佳之具體實施例。然而，本發明可採用許多 不同之形式來實施’並不受限於此處陳述之具體實施例。 ，圖1及圖2展示根據本發明之—具體實施例之—種疊合式 =裝置1GG及其製造方法·。首先於步驟則時各別燒結 u 件〇1及第一凡件1〇2。接著於步驟202時將高溫接合 塗佈(可利用印刷或點膠等方式塗佈)於第一元件 113144.doc 200812127 101及第二元件1〇2之間的一即將接觸表面。此高溫接合材 料可僅塗佈於第一元件101及第二元件102之間即將接觸表 面之部份面積上。步驟202亦可以將事先製成生胚之高溫接 合材料103置於第一元件101及第二元件1〇2之間來替代。後 續於步驟203時，將第一元件101、第二元件ι〇2及高溫接合 材料103 —起置於溫度範圍為3〇〇 °c至900。〇之高溫環境 中’以使該等高溫接合材料1〇3於第一元件1〇1及第二元件 102之間熔融，以將該第一元件ι〇1及第二元件1〇2結合成一 疊合式結構104。最後，於步驟2〇4中於疊合式結構1〇4的兩 知的五個表面上以及中間部位處形成複數個端電極丨〇5，以 使該疊合式電子裝置1〇〇得以與其它電子裝置電連接。該高 溫接合材料103可為釉料、玻璃等適合在高溫中融熔並與元 件之表面產生反應以黏合元件之任何材料。 圖3及圖4展示根據本發明之另一具體實施例之一種疊合 式電子裝置300及其製造方法4〇〇。首先於步驟4〇1時各別燒 結第一兀件301及第二元件3〇2。接著於步驟4〇2時將高溫接 合材料303塗佈於第一元件3〇1及第二元件3〇2之間的一即 將接觸表面。此高溫接合材料可僅塗佈於第一元件3〇1及第 二το件302之間即將接觸表面之部份面積上。步驟4〇2亦可 以將事先製成生胚之鬲溫接合材料3〇3置於第一元件3〇1及 第二兀件302之間來替代。後續於步驟4〇3時，將第一元件 30卜第二元件302及高溫接合材料3G3—起置於溫度範圍為 300°C至900°C之高溫環境中以使該等高溫接合材料3〇3於 第-元件301及第二元件3〇2之間溶融，形成一高絕緣阻抗 113I44.doc 200812127 之高溫接合層以將第一元件30丨及第二元件3〇2結合成一疊 合式結構304。接下來於步驟4〇4中對疊合式結構3〇4進行導 角。在步驟405中，在疊合式結構3〇4之表面批覆一保護層 3 05。最後於步驟406中進行上端銀4〇61、燒銀4〇62及電鍍 4063等動作以於疊合式結構3〇4之兩端的五個表面上形成 端電極306,以使該疊合式電子裝置3〇〇得以與其它電子裝 置電連接。 為使電子裝置具有較好的銲接特性，常會另以電鍍的方 式在電子裝置的端電極部份形成電鍍鎳或錫，而電鍍液為 酸性溶液，易與電子裝置本體發生反應、侵蝕電子裝置。 而根據此實施例，由於本發明係使用高溫接合技術，因而 可更進-步地於高溫形成保護層3〇5(例如··陶究轴）於該疊 合式結構304之表面。形成此保護層3〇5使疊合式電子裝置 300具有下列優點··耐磨性高、高機械強度、表面平滑、低 化學反應性且不需使用特殊的電鍍製程。 ，因而可提供元件間接著面In accordance with an embodiment of the present invention, a method of fabricating a stacked electronic device includes the steps of: separately sintering the components; placing one or more high temperature bonding materials between adjacent two of the components; And the element or the high temperature bonding material is placed in a temperature range of 3 s: _°c in a high temperature environment to melt the or the high temperature bonding material between the two adjacent elements Combining the elements into a stacked structure; and forming at least two end electrodes on at least one surface of the stacked structure. In accordance with another embodiment of the present invention, a stacked electronic device includes: a plurality of two adjacent sintered components; or more high temperature bonding materials disposed between the two adjacent components, such that After being placed in a temperature range of 30 (rC to a high temperature environment after the warfare, the elements are combined into a stack of human structures; and at least two end electrodes are placed on at least one surface of the stacked structure. [Embodiment] The invention will be described in detail below with reference to the accompanying drawings, which are set forth in the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; 1 and 2 show a laminated type=device 1GG and a method of manufacturing the same according to the present invention. First, in the step, each of the sintered n pieces 〇1 and the first 1〇2. Next, at step 202, a high temperature bonding coating (which can be applied by printing or dispensing) to an imminent contact surface between the first component 113144.doc 200812127 101 and the second component 1〇2 This high temperature bonding material It is applied only to a portion of the area between the first element 101 and the second element 102 that is to be in contact with the surface. Step 202 may also place the high temperature bonding material 103 previously prepared as a green sheet in the first element 101 and the second element 1 The second element 101, the second element ι〇2 and the high temperature bonding material 103 are placed together in a temperature range of 3 〇〇 ° c to 900 in the high temperature environment. 'These high-temperature bonding materials 1〇3 are melted between the first element 1〇1 and the second element 102 to combine the first element ι〇1 and the second element 1〇2 into a stacked structure 104. Finally, in the step 2〇4, a plurality of terminal electrodes 丨〇5 are formed on the five surfaces of the two structures of the stacked structure 1〇4 and at the intermediate portion, so that the stacked electronic device can be combined with other electrons. The device is electrically connected. The high temperature bonding material 103 can be any material suitable for melting at high temperatures and reacting with the surface of the component to bond the component, such as glaze, glass, etc. Figures 3 and 4 show another embodiment in accordance with the present invention. Stacked electronic device 300 and manufacturing thereof First, the first element 301 and the second element 3〇2 are respectively sintered at step 4〇1. Then, at step 4〇2, the high temperature bonding material 303 is applied to the first element 3〇1 and An imminent contact surface between the second member 3〇 2. The high temperature bonding material may be applied only to a portion of the area between the first member 3〇1 and the second τ member 302 that is to be in contact with the surface. Step 4〇2 Alternatively, the temperature bonding material 3〇3 prepared in advance to be placed between the first element 3〇1 and the second element 302 may be replaced. In the following step 4〇3, the first element 30 is used. The two elements 302 and the high temperature bonding material 3G3 are placed in a high temperature environment having a temperature ranging from 300 ° C to 900 ° C such that the high temperature bonding materials 3 〇 3 are between the first element 301 and the second element 3 〇 2 Melting, a high temperature bonding layer of high insulation resistance 113I44.doc 200812127 is formed to combine the first component 30丨 and the second component 3〇2 into a stacked structure 304. Next, the laminated structure 3〇4 is guided in step 4〇4. In step 405, a protective layer 305 is applied to the surface of the stacked structure 3〇4. Finally, in step 406, the upper end silver 4〇61, the burnt silver 4〇62, and the electroplating 4063 are performed to form the terminal electrodes 306 on the five surfaces of the two ends of the stacked structure 3〇4, so that the stacked electronic device 3 is The 〇〇 is electrically connected to other electronic devices. In order to make the electronic device have better soldering characteristics, nickel plating or tin plating is often formed on the terminal electrode portion of the electronic device by electroplating, and the plating solution is an acidic solution, which easily reacts with the electronic device body and erodes the electronic device. According to this embodiment, since the present invention uses the high-temperature bonding technique, the protective layer 3〇5 (e.g., the ceramic axis) can be formed on the surface of the laminated structure 304 at a higher temperature. Forming the protective layer 3〇5 provides the laminated electronic device 300 with the following advantages: high wear resistance, high mechanical strength, smooth surface, low chemical reactivity, and no special plating process is required. Thus providing inter-element junctions
、靜電放電（ESD)保護裝置或 I13144.doc 本發明於兩溫時結合各元件，区 較大的結著力及提昇強度。而且， 防水性，可提昇所製诰曇厶4 φ 2 -10- 200812127 電磁干擾（EMI)抑制裝置等電子裝置。該等電子裝置所包含 的元件可視需要為電容元件、電感元件、電阻元件、陣列 型電感元件、陣列型電容元件、陣列型電阻元件或變阻器 元件等元件。 圖5展示根據本發明之一具體實施例之一種疊合式電子 裝置的製造方法所製作之一種具抑制EMI與ESD保護功能 之電子裝置500。該製法係先燒結電感元件5〇1與變阻器 (varistor)元件502後，將高溫接合材料5〇3塗佈在電感元件 501與變阻器元件502之接觸面。利用高溫 使尚溫接合材料503與電感元件501與變阻器元件5〇2之接 觸面產生反應，進而結合成一疊合式結構。在疊合式結構 表面形成端電極504以完成電子裝置500。此電子裝置5〇〇 由於電感元件501與變阻器元件5〇2之寄生電容特性形成 型防制EMI的LC結構濾波器。而且變阻器元件5〇2本身具有 ESD保護效果，因而組成LC型EMI與ESD保護裝置，其中電 感兀件501與變阻器元件5〇2可為單一或陣列型元件。 如同於[先前技術]一節中所提及，傳統的乙(：濾波元件以 共燒方式製作，由於共燒時電感與電容材料燒結匹配性不 佳，容易造成元件翹曲、或材料互相反應而使特性不佳， 使得LC濾、波元件開發不易。而且傳統的^濾波元件不具有 如本發明所製作之LC濾波元件有ESD防護功能，使得在應 用上無法使用於ESD可能發生的位置。根據本發明之一具 體實把例所製作之具抑制EMI與ESD保護電子裝置5力〇，其 係使用燒結過之電感元件5〇1與變阻器元件5〇2，而使元件 113144.doc 200812127 、、^ 口時所使用之溫度（30(rc至8〇(rc)低於銀之熔點溫度，故 電感元件501與變阻器元件5〇2均可使用銀作為内電感之材 料，可降低兀件的成本。而且高溫接合材料5〇3僅在電感元 件501與I阻n元件如之表面發生反應，並不會影響原本 :兀件特性，故較傳統之共燒方式容易控制所製作之電子 衣置之特性。除此之外，各別燒結電感元件5〇1與變阻器元 件502有另一優點··可因應ΕΜι需求以便搭配不同的電感元 件501與變阻器元件5〇2。 /寻/心的疋，亦可使用單一或陣列型電阻取代上述實 施例中之電感元件如’以與變阻器元件502形成RC並聯電 路I成RC型單一或陣列型EMI防制與esd保護裝置。 人上述實施例中雖為了簡化說明，僅以包含兩種元件之疊 合式電子裝置為例，但此領域具通常知識者應能瞭解，本 發月並不限於僅包含兩種元件之疊合式電子裝置，亦可使 本發月之方法製作包含更多種元件之疊合式電子裝置， 僅而在製私中將向溫接合材料（可為同一種或多種）分別置 於7G件中兩兩相鄰之元件間’以經高溫加熱後得以將多種 兀件彼此黏合即可。因此，說明書暨附圖應視為解說性的， 而不應視為限制柹沾 ^ α ^ ., J性的’並且所有此類的修改皆屬本發明範 疇内。 【圖式簡單說明】 圖1及圖2展不根據本發明之一具體實施例之一種疊合式 電子裝置及其製造方法。 圖3及圖4展示根據本發明之另一具體實施例之一種疊合 113144.doc -12- 200812127 式電子裝置及其製造方法。 圖5展示根據本發明之一具體實施例之一種疊合式電子 裝置的製造方法所製作之一種具抑制EMI與ESD保護功能 之電子裝置。Electrostatic Discharge (ESD) Protection Device or I13144.doc The present invention combines various components at two temperatures, and has a large junction strength and strength. Moreover, the water repellency improves the electronic devices such as the 4 φ 2 -10- 200812127 electromagnetic interference (EMI) suppression device. The components included in the electronic device may be components such as a capacitive element, an inductive element, a resistive element, an array type inductive element, an array type capacitive element, an array type resistive element, or a varistor element. 5 shows an electronic device 500 having a EMI and ESD protection function produced by a method of fabricating a stacked electronic device in accordance with an embodiment of the present invention. In this method, after the inductor element 5〇1 and the varistor element 502 are sintered, the high-temperature bonding material 5〇3 is applied to the contact surface of the inductor element 501 and the varistor element 502. The high temperature bonding reaction material 503 and the contact surface of the inductance element 501 and the varistor element 5〇2 are reacted to form a stacked structure. A terminal electrode 504 is formed on the surface of the laminated structure to complete the electronic device 500. This electronic device 5 形成 forms an LC structure filter for preventing EMI due to the parasitic capacitance characteristics of the inductance element 501 and the varistor element 5 〇 2 . Moreover, the varistor element 5〇2 itself has an ESD protection effect and thus constitutes an LC type EMI and ESD protection device, wherein the inductance element 501 and the varistor element 5〇2 may be single or array type elements. As mentioned in the [Prior Art] section, the conventional B (the filter element is fabricated by co-firing, because the inductance and the capacitive material do not match well when co-fired, it is easy to cause the component to warp or the materials react with each other. The poor performance makes LC filter and wave element development difficult. Moreover, the conventional filter element does not have the ESD protection function of the LC filter element manufactured by the present invention, so that it cannot be used in the application where the ESD may occur. One of the embodiments of the present invention is an electronic device for suppressing EMI and ESD protection. The sintered inductor element 5〇1 and the varistor element 5〇2 are used to make the element 113144.doc 200812127, ^ The temperature used for the mouth (30 (rc to 8 〇 (rc) is lower than the melting temperature of silver, so both the inductance element 501 and the varistor element 5〇2 can use silver as the material of the internal inductance, which can reduce the cost of the component. Moreover, the high-temperature bonding material 5〇3 reacts only on the surface of the inductive element 501 and the I-blocking element, and does not affect the original: the characteristics of the element, so that it is easier to control the produced electron than the conventional co-firing method. In addition, the individual sintered inductor elements 5〇1 and the varistor element 502 have another advantage. · It can be adapted to different inductor elements 501 and varistor elements 5〇2. Alternatively, a single or array type resistor may be used instead of the inductive element in the above embodiment, such as 'to form an RC parallel circuit I with the varistor element 502 into an RC type single or array type EMI protection and esd protection device. Although a superimposed electronic device including two components is taken as an example for simplification of description, those skilled in the art should be able to understand that the present month is not limited to a stacked electronic device including only two components, and The method of the present month produces a stacked electronic device comprising a plurality of components, and in the manufacturing process, the warm bonding materials (which may be the same or more) are respectively placed between the adjacent components of the 7G component. After heating at a high temperature, it is possible to bond a plurality of pieces to each other. Therefore, the specification and the drawings should be regarded as illustrative, and should not be regarded as limiting the 柹 α ^ α ^ , , , , and all such modify BRIEF DESCRIPTION OF THE DRAWINGS [Brief Description of the Drawings] Figures 1 and 2 show a laminated electronic device and a method of manufacturing the same according to an embodiment of the present invention. Figures 3 and 4 show another according to the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT 113144.doc -12-200812127-type electronic device and method of manufacturing the same. Figure 5 shows a method for fabricating a stacked electronic device according to an embodiment of the present invention. Electronic device for ESD protection function.
【主要元件符號說明】 100 疊合式電子裝置 101 第一元件 102 第二元件 103 面溫接合材料 104 疊合式結構 105 端電極 300 疊合式電子裝置 301 第一元件 302 第二元件 303 高溫接合材料 304 疊合式結構 305 保護層 306 端電極 5〇〇 具抑制EMI與ESD保護功能之電子裝置 501 電感元件 502 變阻器元件 503 高溫接合材料 113144.doc -13-[Main component symbol description] 100 laminated electronic device 101 first component 102 second component 103 surface temperature bonding material 104 laminated structure 105 terminal electrode 300 laminated electronic device 301 first component 302 second component 303 high temperature bonding material 304 stack Integrated structure 305 protective layer 306 terminal electrode 5 electronic device 501 for suppressing EMI and ESD protection function Inductive element 502 Varistor element 503 High temperature bonding material 113144.doc -13-