TW200807606A - Substrate support with electrostatic chuck having dual temperature zones - Google Patents

Abstract

An electrostatic chuck for receiving a substrate in a substrate processing chamber comprises a ceramic puck having a substrate receiving surface and an opposing backside surface with a plurality of spaced apart mesas. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate. Heater coils located at peripheral and central portions of the ceramic puck allow independent control of temperatures of the central and peripheral portions of the ceramic puck. The chuck is supported by a base having a groove with retained air. The chuck and base can also have an overlying edge ring and clamp ring.

Description

200807606 IX. Description of the Invention: [Technical Field] The present invention relates to a material support for holding a substrate in a substrate processing chamber. ^ ^ ^ ^ ^ ^ ^ & [Prior Art] In substrate processing such as semiconductors and displays, electrostatic chucks are used to hold substrates in a substrate processing chamber. Typical electrostatic chucks include electrodes that are covered by an insulator such as a ceramic or polymer. When charging an electric plate, the electrostatic charge in the electrode and the substrate is maintained in the substrate of the chuck. [Generally, by providing a gas at the back of the substrate to control the temperature of the substrate to enhance the substrate and the chuck. The rate of heat exchange between the entire micro-gap between the surfaces. The electrostatic chuck can be supported by a base having a passage for flowing a fluid therein to cool or heat the chuck. After the substrate is firmly retained on the chuck, process gases are introduced into the chamber and electropolymerized to form the substrate by CVD, PVD, etching, implantation, oxidation, nitridation, or other process. During processing, the surface is typically subjected to a non-uniform processing rate or other process characteristics throughout the surface of the substrate. For example, the non-uniform treatment can produce concentric processing strips in the radial direction across the surface of the substrate. The distribution of gaseous or plasma species within the chamber may also cause non-uniform processing characteristics. For example, the distribution of gas throughout the chamber may vary with the location of the inlet and outlet ports in the chamber relative to the surface of the substrate. In addition, the mass transfer mechanism can also change the different regions of the gaseous material across the surface of the substrate.

200807606 Rate of spread and arrival. Non-uniform heat in the processing chamber causes a non-uniform processing rate. For example, heat may be induced due to the energy of laminating from the plasma or the radiant heat reflected from the walls of the chamber. It is not desirable to have processing variations on the entire substrate that result in different characteristics of active and passive electronic devices fabricated in different regions of the substrate (eg, perimeter and center). Therefore, during substrate processing, people It is desirable to reduce the overall processing rate and other processing characteristics. At the same time, people also control the temperature of different regions of the entire processing surface of the substrate. In addition, the temperature distribution of the entire base village is controlled during the processing. [Invention] A processing chamber is used. a clamping ring, a base and an edge ring of the top surface of the processing chamber, the top surface having a chuck receiving portion and a peripheral portion for the support disc, the electrostatic chuck tray, the ceramic disc having The edge ring including the first and second steps is disposed on the second step of the ceramic disk, the: a) the annular body having a bottom surface having a plurality of holes for supporting the edge ring a plurality of holes of the bottom surface such that a peripheral portion to a top surface of the base; b) an upper lip extending upwardly to be placed on a first step of a peripheral truss of the ceramic disk To the outer side surface; and d) the foot portion extending downward from the diameter to the outside to be disposed at a peripheral portion of the top surface of the base. An edge ring for processing a chamber, the processing chamber may also be lightly different from the substrate, because the surface of the substrate is desired to be controlled to include a static-filled sleek edge a ledge, a surface of the clamping ring and adapted to be fixed within the radial extension; c) a radial side surface having: i) 200807606 base; u) an electrostatic plate on the base, the electrostatic chuck comprising a Tauman disk The ceramic disk includes a peripheral ledge having a step; iii) a clamping ring having an upper lip, an outer side surface, and a top surface, wherein the upper lip extends radially inwardly to be placed On the step of the peripheral ledge of the ceramic disc, the edge ring comprises: a) a belt comprising a foot disposed on a top surface of the clamping ring; b) an annular outer wall surrounding the lost loop Said = side surface; and c) an inner flange covering the step of the peripheral wall of the ceramic disc. *,

An edge ring for treating a diverticulum, the processing chamber having: i) a base, U) an electrostatic chuck on the base, the electrostatic chuck comprising a ceramic disc, the ceramic disc is pushed with a step a peripheral wall frame; ni) a clamping ring having a top surface, an upper lip portion, and an outer side surface, the upper lip portion extending inwardly from the top surface to be placed on the peripheral wall of the ceramic disk On the step of the frame, the edge ring comprises: a) a wedge-shaped strip comprising - ^ w w ^ = edge extending radially inwardly from the wedge-shaped strip, the inner flange being placed in the month b a foot on the step of the peripheral wall frame of the ceramic disc, and a right convex edge extending radially outward from the wedge-shaped belt, the outer surface of the outer surface of the garment Radial inward facing. One for processing

Lei-like spoon I to the electrostatic chuck containing the substrate, the J electric plate includes: a) danger 遂 right-handed * product is a disc, including: i) the substrate receiving surface has a measuring surface The protrusion of the sacred sac is a thousand *, the raised platform is divided by the groove pattern, and the other is the heat transfer gas # ^ ^ . ^ 〇% 闹 瓷 瓷 圆盘 圆盘 圆盘 圆盘 孤 孤 孤 周边埠 and the center 埠 final soil flower tube, which passes through the ceramic disc to stand on the surface of the 谷 纳 玷 rm & , t) 200807606 body conduit can be the same bearing for the substrate receiving surface · ιν Fen..., the different vomiting fields provide heat transfer gas, and ill) the peripheral ledge, with the first order male-ji paper... lacking to p white and 苐 two steps, the younger brother And being lower than the first order of the flute; b) an electrode embedded in the ceramic disc to produce a substrate on the substrate receiving surface. ^罝隹 [Embodiment] As shown in Fig. 1, an embodiment of the electrostatic chuck 20 includes a time disc 24' having a Tauman body, wherein the (4) body has a substrate receiving surface 26, and the substrate accommodates The surface 26 is the top surface of the dome 24 and serves as a receiving substrate 25. The ceramic disc 24 also has a sleek, 28-sided ceramic disc 24 opposite to the surface of the I-grain surface 26, and has a peripheral wall including a first step 3丨 and a second step 33. 29, the second step 33 is from the first step 31 and is lower than -*胄31. The disc harrow contains at least one of the following materials: alumina, aluminum nitride, oxidizing furnace, reading from bismuth telluride, bismuth telluride, tantalum nitride, titanium oxide, oxidized knots and mixtures thereof. The pottery round disc 24 may be a unitary single ceramic made of hot pressed and sintered ceramics, and then processed into a sintered form to form a final shape of 24 . In the current scheme, as shown in Fig. 2 and Fig. 2, the back side of the ceramic disc 2/| 2 8 includes a plurality of pavements, which are adjacent to the pq ΑΑ # 夕 扃 〇, The countertop 3〇 is a 杈 ^ 叩 叩 状 利用 利用 利用 利用 。 。 。 。 。 。 。 。 。 。 In use, the gap 3 2 is filled with a gas such as air to modulate the rate of heat transfer from the lunar surface 28 to other underlying structures of other structures. In a windshield mode, the table 30 includes a dome-like projection, which may even be shaped as a pillar, and the butt-like projection extends from the surface 28 upwards 8 200807606, and the pillar has a rectangular or circular cross section. shape. The width of the table top is from about W to about 50 microns, and the width of the table top is 3 inches (or 500 to about 5000 microns. However, the table top 3 can also have dimensions and dimensions 'for example, a cone or a rectangular block, or even a different ruler in one solution. The tabs 28 are formed by bombarding the back surface 28 with beads having a suitably small bead size to utilize the material of the back surface 28 to form the ceramic disc 24 having the interference gap 32 and also including the electrode % embedded therein. The static electricity of the substrate placed on the substrate receiving surface 26 is a conductor such as a metal, and is shaped as a single or double electrode. A single conductor and having a single electrical connection to the external power source = a plasma-laden discharge material formed in the chamber Cooperating to bias the entire substrate of each nano. The two electrodes have two turns, each of which is biased relative to the other conductor to produce a substrate electrostatic force. The electrode 36 can be formed as a wire mesh or a metal in the mouth region. An embodiment of the electrode 36 of a single continuous wire mesh electrode embedded in a ceramic disk, as shown by electrode 36 comprising a single electrode, may be c-shaped. Wall-to-embedded C-disc. Electrode 36 can be composed of Ming, copper, painful tungsten or alloys thereof. One solution of electrode 36 includes 36 connected to terminal S8, where terminal 58 supplies external power to electrode 3 6 The tantalum ceramic crucible 24 also has a plurality of heat transfer gas conduits that pass through the ceramic body and terminate at a south extent of the substrate receiving surface 26 which may be in diameter from a flange having about other shapes. For example, dozens of micro-name methods are used for the type of countertop 30. To produce for force. The electrode 36 single electrode includes, as well as a plurality of conductors on the chuck 20, which are used to maintain proper opening, as shown in the figure. Including the double-electrode-loaded, molybdenum, titanium, molybdenum mesh "electrode portion power supply 38a, 38b, 埠40a, 40b 200807606 to provide a value to the substrate receiving surface 26 to find an R,,, V 1 Seeking the gas. A heat carrier gas such as helium is supplied to the lower portion of the back surface 34 of the substrate to conduct heat away from the cover substrate 25 and reach the receiving surface % of the ceramic disk 24. For example, the first gas guide 38a can be positioned to supply the heat transfer gas ' to the central heating zone 42a of the substrate receiving surface 26 and the second gas conduit 3μ can be positioned to supply heat transfer to the peripheral heating zone 42b of the substrate receiving surface 26. gas. The central heating zone of the substrate receiving surface 26 of the ceramic disc 24 is 42a and the peripheral plus

The hot zone 42b allows respective portions of the substrate processing surface 44 to maintain different temperatures, for example, the upper central heating zone 42 a of the substrate 25 and the peripheral heating zone 42 b are used, for example, in a plurality of heating coils 50, 52 The first heating coil 50 and the second heating coil 52 in the tray 24 can further control the temperature at the central heating zone 42a and the peripheral heating zone 42b of the substrate receiving surface 26 of the ceramic disk 24. For example, the heating coils 50, 52 may be radially spaced apart and disposed concentrically with respect to each other, even in the same plane. In one version, the first heating coil 50 is located at a central portion 504 of the ceramic disk 24, and the second heating coil 52 is located at a peripheral portion 54b of the ceramic disk 24. The first and second heating coils 50, 52 allow for independent control of the temperature of the central portion 54a and the peripheral portion 54b of the ceramic disk 24, and further cooperate with the table 30 on the back surface 28 of the ceramic disk 24 to allow for adjustment placement. The temperature distribution of the substrate 25 on the receiving surface 26 of the ceramic disk 24. Each of the force π heat coils 5 0, 5 2 has the ability to independently control the temperature of the heating zones 4 2 a, 4 2 b to be in the radial direction of the treated surface 4 4 of the entire substrate 25 10 200807606

Implement different processing rates or characteristics. Likewise, different temperatures can be maintained in the two heating zones 42a, b to affect the temperature of the upper center and peripheral regions 46a, b of the substrate 25, thereby counteracting any altered gas species distribution that occurs during processing of the substrate 25. Or heat load. For example, when the gaseous substance at the peripheral portion 46b of the treatment surface 44 of the substrate 25 is not active in the gaseous substance of the central portion 46a, the temperature of the peripheral heating zone 42b is raised to be higher than the temperature of the central heating zone 42a. The entire processing surface 44 of the material 25 provides a more consistent processing rate or processing characteristics. In one version, both the first and second heating coils 50, 52 comprise a circular ring of resistive heating elements, wherein the resistive heating elements are arranged side by side and may even be substantially in the same plane. For example, the heating coils 50, 52 may each be a continuous concentric ring that tapers radially inwardly in the body of the ceramic disk 24. The heating coils 50, 52 may also be helical coils that spiral around an axis passing through the center of the coil, such as a filament of a lamp, disposed in concentric circles throughout the body of the ceramic disk 24. The resistive heating element can be composed of a different resistive material such as, for example, helium. In one version, the heating coils 50, 52 both enclose a sufficiently high electrical resistance to maintain the substrate receiving surface 26 of the ceramic disk 24 at a temperature of from about 80 to about 250 °C. In one version, the resistance of the coil is from about 4 to about 12 ohms. In one example, the first heating coil 50 has a resistance of 6.5 ohms and the second heating coil 5 2 has a resistance of 8.5 ohms. Energy is supplied to the heating coils 50, 52 via separate wire posts 58a-d extending through the ceramic disk 24. In combination with the heating coils 50, 52, it is also possible to control the pressure of the heat transfer gas in the two zones 42a, b to make the substrate processing rate on the entire substrate 25 more uniform. For example, both zones 42a, b can be configured to maintain a heat transfer gas at different equilibrium pressures to provide different heat transfer rates from the back 34 of the substrate 25. This is accomplished by supplying the heat transfer gas at two different pressures through conduits 38a, 38b, respectively, for release at two different locations on substrate receiving surface 26.

The electrostatic chuck 20 can also include an optical temperature sensor 60&, which passes through holes 62a, b in the ceramic disk 24 to contact and accurately measure the temperature of the upper center and peripheral portions 46a, b of the substrate 25. . The first sensor 60a is at the temperature of the core portion 46a, and the second sensor 6〇b is located at the peripheral heating zone 42b of the ceramic disk 2 to correspondingly read the temperature of the peripheral portion Μ of the substrate 25. The optical temperature sensors 6〇a, b are located in the chuck 20 such that the tips 64a, b of the shoulder detector and the substrate receiving surface of the gripping surface 24 are in the side of the square W, so that The tip of the substrate 丄π, the back surface of the substrate 25 on the 〇 “ “ “ I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I A square 6 〇 includes a thermal sensor probe 68, a 'per servant optical temperature sensing I 72 and a dome-shaped top for the tip; a ~ needle 68. The shape is formed to have a side copper cap 7〇 The steel cap 70 of the closed cylinder of the oxygen-free steel material 4 can be formed directly with the top 74 of the copper cap 70. The phosphor plug 76 is embedded inside and provides contact to the thermal sensing probe 68. The phosphorous 3 tip 64 embedded in the steel cap 70 is a dome-shaped top, fast and more sensitive thermal response. The steel cap 76 | does not erode or break the repulsion to allow repeating with the different substrates 25 The steel cap 70 has a recess 78 for accommodating the epoxy tree 12 200807606 79 for use in the sensor probe 68 Adhesive cap 7〇. The phosphorus plug 76 converts heat into photons that pass through the fiber bundle 80 in the form of infrared radiation. The optical fiber bundle 8 can be made of borax acid and a group of salt glass fibers. The optical fiber bundle 80 is surrounded by a sleeve 8 2 which, in turn, partially surrounds the sleeve 82 through a temperature barrier 84 which serves to thermally insulate the temperature sensor from the base supporting the ceramic disc. The sleeve 82 can be a glass tube to provide better thermal insulation from the surrounding construction, but can also be made of a metal such as copper. The temperature jacket 84 may be composed of PEEK, polyether ether, and may also be Tefl〇n (g) (polytetrafluoroethylene) manufactured by Dupont de Nemours, Delaware, such as Figures 4A, 4B and 5 As shown, the substrate support 9A includes an electrostatic chuck 2〇 secured to the base 91, wherein the base 91 for supporting and securing the chuck base 91 includes a metal body 92 having a top surface 94, wherein the top surface 94 has a chuck The housing portion 96 and the peripheral portion 98 are received. The top surface material 96 is adapted to receive the electrostatic chuck 2q with the disk 2 so that the peripheral portion of the base Η of the disk 24 is kneaded outwardly beyond the peripheral portion 98 of the taekwoke 91. (4) accommodating the clamping ring (10) The metal master # Μ 刀 knife on the top surface. The base passage 102 of the base 91 ® 94 ^ ; ^ is used, for example, to allow the gas to be injected into the gas pipe 38a of the ceramic disk 24 or the gas disk 38a. The chuck groove U H knife 96 of the top surface 94 of the sley 91 includes one or more !U6a, b to the gas in the ceramic disk 2 . In a Galois 蹩 面 保持 流动 流动 流动 流动 流动 流动 流动 一 一 一 一 一 一 一 一 夹 夹 夹 夹 夹 夹 邱 邱 邱 邱 邱 邱 邱 邱 邱 邱 邱 邱 邱 邱 邱 邱 邱 邱 邱 邱 邱 邱 邱The mesas 30 cooperate to control the rate of heat transfer from the peripheral portion 54b of the ceramic disk 24. In another embodiment, the central groove 106b is used in conjunction with the peripheral groove 106a to regulate heat transfer from the central portion 54a of the ceramic disk 24.

The grooves 106a, b in the top surface 94 of the base 91 cooperate with the land 30 on the back surface 28 of the ceramic disk 24 to further adjust the temperature of the entire substrate processing surface 44. For example, the shape, size and spacing of the mesas 30 control the total amount of contact surface of the mesas 30 in contact with the top surface 94 of the base 91, thereby controlling the overall heat transfer area of the interface. For example, the shape and size of the mesas 30 can be designed such that in reality the back side 28 of the ceramic disk 24 has only 50% or less of the total area, for example 30% is in contact with the top surface 94 of the base 91. The smaller the contact area, the higher the temperature of the entire substrate processing surface 44. Similarly, air is provided between the table top 30 and the entire back side 28 for further temperature adjustment. The mesas 30 on the back side 28 of the ceramic disk 24 may be distributed over the entire back surface 28 in a uniform or non-uniform pattern. In a uniform pattern, the distance between the mesas 30 as shown by the gap 32 is substantially the same, while the gap distances that are not evenly spaced vary over the entire surface 28. It is also possible to vary the shape and size of the mesas 30 over the entire surface; For example, a pattern of non-uniform mesas 30 can be provided to provide different contact surface amounts in different regions over the entire back surface 28 of the ceramic disk 24 to control the heat from the center and peripheral portions 54a, b of the disk 24, respectively. The transfer rate, and thus the temperature at the upper center and peripheral portions 46a, b of the substrate 25, is controlled. 14 200807606

The base 91 also includes a plurality of passages 110 for circulating fluid such as water. A base 91 having a circulating cooling fluid acts as a heat exchanger to control the temperature of the chuck 20 to achieve the desired temperature across the processing surface 44 of the substrate 25. The fluid passing through the passage can be heated or cooled to increase or decrease the temperature of the chuck 20 and the temperature of the substrate 25 held on the sizzling plate 20. In one version, the channel 11 is shaped and sized to allow fluid to flow therethrough to maintain the temperature of the base 9 1 from about 0 to i 2 〇〇c. The base 91 also includes an electrical connector assembly for conducting power to the electrodes 36 of the electrostatic loss plate 20. The electrical connector assembly includes a ceramic insulating sleeve 24". The insulating sleeve 1 24 may be, for example, alumina. A plurality of terminals 58 are embedded in the ceramic insulating sleeve 124. The terminals 5 8, 5 8a-b provide electrical power to the electrodes 36 of the electrostatic chuck 20 and the heating coils 50, 52. For example, the terminal 58 can include a steel post. As shown in Figure 7, the contact strip 140 is configured to surround the terminals 58, 58a-d of the electrical connector assembly. Each contact strip 1 40 includes a metal, such as a copper alloy. The structural body of the contact strip 140 includes a housing I42 that is adapted to be mounted about the terminal 58. The shape of the outer casing I42 depends on the shape of the post 58 and the shape of the post 58 should preferably be mimicked. The portion or strip 146 of the outer casing 142 includes a strip 144 having a plurality of slits 148 and a plurality of heat exchange sunroofs 150, the slits 148 being designed in a pattern to alternately define the sunroof 150 with the slits 148. In one embodiment, the plurality of slits 148 and sunroof 15 延伸 extend from the top edge 1 52 of the strip 146 to the bottom edge 154 of the strip 146 or a portion of the outer casing 1 42. The plurality of slits 148 and the sunroof 15 〇 form a spring-like feature that reduces the stiffness of the outer casing and allows it to conform to the shape of the outer surface of the terminal post 58 or the terminal. The structural loops of the plurality of slits 148 on the strips 146 of the outer casing 142, through its resilient features, cause the posts 58 to contact the desired area of the inner surface of the outer casing 142. This makes the best heat transfer between the contact belt 14〇 and the final creep, ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ As shown in Figure 5A, it is also possible to configure the ring assembly 17〇 to reduce the inclusion in The peripheral region of the substrate support member 90 of the electrostatic chuck supported by the base 91 is made of sputum, private, and protected. It is not subject to intrusion. In the following: in the embodiment, the ring assembly (10) includes a holding ring = 7: a dimorphic body 171 'which is fixed to the top surface 94 of the base 91 by means of a device such as a screw or a screw (10). The surrounding part is on the fence. Shuangguang has an upper portion extending radially inward from the top surface 174. The portion 172 has a bottom surface 73 that is designed to be mounted and disposed on the first step 31 of the periphery of the disk 24 without the return of the ceramic wall. A lip 172 has a bottom surface 173 adapted to be shaped between the ceramic disk 24 and the base 9i. For example, the lower surface m can be made into a gas-tight person. The table 73 can contain a polymer, and the layer, for example, includes a poly-imine to form a good seal: such as 乂1 〇〇 made of a material that can withstand plasma erosion For example, such as a holding 18, as shown in FIG. 5B, the ring assembly further includes an edge ring 18〇, 1. 8〇 includes an edge ring=band 182 disposed on a top surface 174 of the clamping ring 100. The edge ring 180 also has a peripheral portion 184 176 ... outer wall 186 around the holding ring to reduce or even completely prevent the machine from escaping, and the deposition on the nucleus 100 is lost, otherwise the external side table will: the deposit will be exposed 扒16 200807606 =: flange 190 of ΓΛ33. Flange 1m ^ ^ 196ΤΦ^Α^ώ# 194〇19〇a;tit^ -# ^ k ^ ^ ^ J ^ ^ ^ ^ # 25 ^ ^ ^ ^ ^ ^ ^ : Technically broken substrate 25 covered pottery In the region of the disk 24, the ring assembly (10) and the edge ring (10) cooperate to reduce process deposits on the electrostatic chuck 2G supported on the substrate during processing of the substrate U, and 180 90 to - Washing class: reduce erosion in the process. The deposit on the exposed surface of the ring assembly 170 from the second, G° and edge rings can be easily removed, = without having to remove the entire substrate support 9 to be cleaned, which can be made of ceramics such as, for example, quartz. The edge coat is shown in Fig. 5C. + a · _ odor material is produced in the ring assembly 17 which reduces the process deposit corrosion on the material support #90 including the electrostatic chuck 20 and the base 91. In the alternative, the main body-shaped body 171 of the 100-pack of the cool-holding ring has a 孭 surface for supporting the edge ring 180 and a female, *1 Luo And a bottom surface 192 of the plurality of holes 175 adapted to be fixed to the top surface 94 of the base 91. The annular body 171 is connected to the peripheral portion * 98 of the base 4. The clamping ring 1 has The radially inwardly extending lip portion 172 is disposed on the first stage of the peripheral ledge 29 of the ceramic disc 24. The upper lip portion 172 of the gripping bad 100 may also have a trimming edge disposed on the ceramic disc 24 The first step 3 1 of the ledge 2 Q aa & , has a downwardly extending convex arm 192 which minimizes the contact area, and a downwardly extending bottom groove 194 extends 17 200807606 a lower extending protrusion 193. The upper lip portion of the clamping ring 1 勺 includes a 1""3' disposed on the first step 31 of the peripheral ledge 29 of the ceramic disc 24 in one embodiment. (d) Compound layer, such as polyimine. The bottom surface 173 may also be a convex surface. For example, the protrusions 193 may be formed of a shirt, & surface material of the bottom 193. The clamping ring 1 194 194 176 袤 is flat and terminates at the outer diameter i96 of the base 91. The clamp ring 100 also has a foot portion 197 Z extending downwardly from the radially outer side surface 176 on the peripheral portion 98 of the top surface 94 of the base 91. The holding ring 1 ϋΟ can be made of, for example, a metal material such as a button, a winter titanium or stainless steel, or a ceramic material such as alumina. ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 〆 The scheme of the (4) edge ring 18Q in Figure 5C includes a wedge band 182 having a tilted, upper surface 183. The lower surface 185 of the strap 182 covers the upper surface 174 of the % 100. The edge ring 18A also has an inner flange 187 extending inwardly from the pepper-shaped belt. The inner flange 187 includes a bottom surface 188 that is raised upwardly about the lower surface 185 of the (four), 182. The inner flange 187 has a foot 189 that can be disposed on the first step 33 of the peripheral edge 29 of the ceramic disc 24. . The inner flange 187 further includes an upper surface 191 having a radially inward perimeter of the upper step 232 and the lower step 234. The upper step 232 and the lower step 234 are gradually lowered in height in the radially inward direction. The inner flange 1 μ also has an arcuate edge 236 that engages the angled upper surface 183 of the wedge strap 182. The outer flange 238 of the edge ring uo extends radially outward from the wedge strap 182. The outer flange 238 includes a cover slip ring 100 The radially inward facing surface 240 of the outer side surface 176. The outer flange 238 further has a bottom wall 242 that extends downwardly about the lower surface 1 85 of the wedge belt 18 18 200807606. The outer flange 238 also has a sloped perimeter edge 244 that reduces erosion of the area. The edge ring 180 can also be made of ceramic such as quartz.

As shown in Figures 4C and 4C1, another embodiment of the electrostatic chuck 20 includes a ceramic disk 24 having a substrate receiving surface 26. The substrate receiving surface 26 includes a groove pattern 250 having radial arms 252 and annular arms 254 interconnected to each other. Between these grooves is a raised platform 256 having separate mesas 258. In the illustrated embodiment, the raised platform 256 has arcuate side edges 257, generally triangular or unequal quadrilateral. However, the raised platform 256 can also have other shapes and can be asymmetrically distributed throughout the substrate receiving surface 26. Each raised platform 256 is defined by a plurality of mesas 258 having from about 10 to about .1000. In one version, the table top 258 is a raised cylindrical protrusion, for example, forming a cylinder or an arcuate protrusion. For example, table top 258 can be a cylinder having an average diameter of from about 5 to about 50 microns and a height of from about 0.5 to about 5 millimeters. The mesas 258 are arranged in a shape, size, and spatial distribution over the entire surface 26 to control the area of contact with the overlying substrate to adjust the rate of heat transfer from the substrate to different regions of the ceramic disk 24. A plurality of heat transfer gas conduits 38a, b (see Fig. 1) pass through the ceramic disk 24 and are located at one or more of the center 埠4〇a and the periphery of the groove pattern 250 on the substrate receiving surface 26. Terminated in 40b. The center turn 40a and the peripheral turn 40b can provide heat transfer gas to the central area 42a and the peripheral area 42b. The peripheral weir 40b terminates at an arcuate cut-out 259 surrounded by a radially inner gas seal edge 260 and a radially outer gas seal edge 262 to define a perimeter region 42b. The center 埠4〇a may terminate at the intersection of the central arm 252 of the recess 25〇 with the radial arm 254 to define a region relative to the center of the central region 4. The center of the substrate receiving surface 26 of the ceramic disk 24 and the peripheral heating regions 42a, b allow the corresponding overlying center and peripheral portions 46a, b of the substrate 25 to be held at different temperatures, respectively (Fig. 8).

In this arrangement, the ceramic disk 24 has a back side 28 (not shown) that is opposite the substrate receiving surface %, which may be planar and free of mesas, or it may have the previously described mesa. The pottery disc 24 also has a peripheral ledge 29 including a first step 31 and a second step 33, the second step 径向 being radially outward from the first step 31 and lower than the first step 31. Tao Jing disc 24 is made of Oxidation, Niobium, Oxide, Tantalum carbide, Tantalum Nitride, Titanium Oxide, Zirconia or a mixture thereof, by hot pressing and sintering ceramic powder and processing the sintered ceramic form. To form the final shape of the disk 24. The grooves 250, the mesas 258, the gas conduits 38a'b and 埠4〇a, the upper and other structures can be machined into a ceramic structure. In the square cable shown in Fig. 4D, the base 91 includes a metal body 92 having a top surface 94 (not shown), wherein the top surface 94 has a sink receiving portion 96 and a radially outwardly extending periphery of the pottery disk 24. Part μ. In this scheme, the base 91 includes a single channel no ' for circulating a liquid such as water to serve as a heat exchanger. The fluid circulation channel 11 〇 includes a spiral channel of a plurality of arcuate ridge regions 260a-c that are unevenly distributed or asymmetrically distributed over the entire substrate. , sale please] Λ && t screen track. The larger length of the channel 110 is set to pass through or through these regions of the base 91 that heat up in use, and a smaller length is used in the cooler regions of the base 91, resulting in an asymmetrical fluid circulation channel (1) 20 200807606 Control Fluid Flow to maintain a uniform temperature across the base 91. A substrate support 90 including an electrostatic chuck 2 and a base 91 may be employed in the substrate processing apparatus 200, an exemplary method of which is illustrated in FIG. The apparatus 200 includes a chamber 2〇1 having a surrounding wall 2〇2, and in one embodiment the chamber 201 is a DPS Advantage chamber. The gas source 2〇4 supplies a process gas to the chamber through the pores 203, which is a gas capable of treating the substrate crucible, such as an etching gas such as a tooth-containing gas such as chlorine or hydrogen sulfide: or a gas such as CVD or PVD A deposition gas, for example, a gas for depositing a dielectric or semiconductor material. A gas energizer 2〇8 is provided for applying a capacitive or inductively coupled Rf energy to the process ammonia, respectively, or by transferring a microwave amount to a process gas (not shown) to form a high energy gas to treat the substrate 25. For example, via the electrode lightning source 冤 source 230 and the electrical grounding wall 202 of the chamber 2〇1, capacitive energy can be applied to the process gas by applying an rf voltage to the electrode 36 of the electrostatically disturbing current 24. The electrode power source 230 also raises the #DC attraction voltage to charge the electrode w of the chuck 24 to the ^ / ^ ^ ^ 36, thereby electrostatically holding the substrate 25. Via the induction coil 205, it is also possible to apply energy to the process gas by coupling the inductive energy to the process gas. Optionally, ;^ " ! is supplied with energy to the process gas by the coupled microwave energy applied to the process gas 'body by the microwave chamber in the transport chamber. The face is in the chamber 201 The substrate 25 is held on the receiving surface 26 of the electrostatic chuck 20, and the electrostatically cool dish 20 is located on the base 91. The chamber is controlled by the controller 212, wherein the controller 212 typically includes a computer having memory and peripherals The component is connected to the central processing unit (CPU) computer 308 of the money transfer, such as a commercial Pentium processor manufactured by Intel Corporation of Santa Clara, Calif. 9 .

of. The memory may include a removable storage device V (four) such as CD 21 200807606 or a floppy disk, and a random access memory (RAM) e controller 212 may also be a red-packed interface, including analog or digital input and inversion. board. The operator can communicate with the chamber controller 212 via the display or data. In order to select a specific screen or function, the operator logs in the device using a data such as a keyboard or a light pen.

The controller 2 12 also includes a computer readable program stored in the memory, including processing code that can control and monitor the execution of the process in the chamber 212. It can be written in any traditional computer readable programming language. The computer can read the appropriate program code by using a traditional text editor. The single or multiple files can be stored in or stored in the memory. Use the media. If the input encoded text is a higher-order language, edit the encoding and then generate the editor encoding with the pre-edited library application ^ Ί7Γ\ encoding. In order to perform the target encoding of the connection and editing, the latter is called to call the target code, so that the CPU reads and executes the editing to complete the task identified in the program. The program may include a temperature control command set to control the temperature at different regions of the substrate 25, such as by independently applying different electrical power to the first and second heating coils 50, 52 of the Tauman disk 24 of the chuck 20, The heat of the conduits 38a, b transfers the flow of gas and controls the flow rate of fluid through the passages 110 of the base 91. The process feedback control command set can be used as a feedback control loop between the temperature monitoring command sets to adjust the power applied to the chamber components such as the heating coils 50, 52, the heat transfer gas flow through the conduits 38 a, b And through the fluid flow through the channel 1 1 底座 of the base 9 1 , the temperature monitoring command set receives temperature signals from the optical temperature sensors 60a, b. When described 22

200807606 is a separate script for making queued tasks, combined or interleaved with other instruction sets. Therefore, the computer readable programs described here should not be specific to the program. Although other alternatives have been described with reference to some preferred solutions. For example, it is used in other chambers and other processes except as described herein. Therefore, the present invention should be limited to the description of the preferred embodiments included herein. BRIEF DESCRIPTION OF THE DRAWINGS The features of the present invention are readily apparent from the following description, the accompanying drawings. However, it should be understood that the present invention is not limited to the specific drawings, and the present invention is encompassed, wherein: FIG. 1 is a second embodiment of the electrostatic chuck, and FIG. 2 is a bottom view of the chuck of FIG. The figure is a side view of the optical temperature sensor. FIG. 4A and FIG. 4B are top views (FIG. 4A) and 4 of the embodiment including the base and the member, and FIG. 4C is a view including the base and the electrostatic chuck. A top perspective view of the plan; a 4C1 view of the annular cross section of FIG. 4C's per-command instruction set, the chamber controller 212 and the functional invention limited to the invention described herein, however, the 'substrate support can be The accompanying claims are not intended to be exhaustive or to illustrate the features of the present invention, and the various features of the present invention. 4C is a detailed perspective view of another 4C 1 of the transparent substrate support, 23 200807606 shows a peripheral region having a peripheral portion and surrounding the air disk sealing arm; FIG. 4D is a support member of FIG. 4C The bottom of the base Plan view; Figure 5A is a cross-sectional side elevational view of an embodiment of a ring assembly including an edge ring across the clamp ring on the substrate support of Figures 4A and 4B, and Figure 5B is a view of Figure 5A a igniting diagram of the ring assembly;

Figure 5C is a cross-sectional side elevational view of another embodiment of a ring assembly including an edge ring over a clamping ring on a substrate support; Figure 6 is a cross-sectional side of an embodiment of the electrical connector assembly of the base 7 is a cross-sectional side view of an embodiment of a contact strip; and FIG. 8 is a cross-sectional side view of an embodiment of a substrate processing chamber having a substrate support. [Main component symbol description] 20 Electrostatic chuck 24 Disc 25 Substrate 26 Substrate receiving surface 2 8 Back surface 29 Peripheral ledge 30 Countertop 31 First step 3 2 Clearance 33 Second step 3 4 Back surface of substrate 36 Electrode 38a Heat Transfer gas conduit 38b heat transfer gas conduit 40 a 埠 40b 埠 42a central heating zone 42b peripheral heating zone 24 200807606

44 Substrate treatment surface 4 6 a Center area 46 b Peripheral area 50 Heating line Figure 5 2 Heating coil 5 4a Center part 54b Peripheral part 5 8 Terminal 58a Independent terminal 58b Independent terminal 58c Independent wiring 枉 5 8d Independent terminal 60 Optical Temperature Sensor 6 0a Optical Temperature Sensing 60b Optical Temperature Sensor 6 2a Hole 62b Hole 64 Tip 64a Tip 64b Tip 66a Arm 6 6b Arm 68 Thermal Sensor Probe 70 Copper Cap 72 Side Wall 74 Top 76 Pad 7 8 Groove 79 Epoxy 80 Optical fiber bundle 82 Sleeve 8 4 Thermowell 90 Substrate support 91 Base 92 Metal body 94 Top surface 96 Chuck accommodating portion 98 Peripheral portion 100 Sleek 102 Channel 104 Bottom surface 106a L groove 106b groove 110 channel 124 ceramic insulation sleeve 140 contact strip 142 inner surface 143 exposed surface 25 200807606

144 with 146 strips 148 slit 150 sunroof 152 top edge 154 bottom edge 169 fixture 170 ring assembly 171 annular body 172 upper lip 173 bottom surface 174 top surface 175 hole 176 outer side surface 180 edge ring 182 strip 183 upper surface 184 foot 185 Lower surface 186 annular outer wall 187 inner flange 188 bottom surface 189 foot 190 flange 191 upper surface 192 bottom surface 193 projection 194 protrusion 196 cantilever edge 197 foot 200 substrate processing device 201 chamber 202 surrounding wall 203 vent 204 Air source 20 5 Inductive coil 212 Controller 23 0 Electrode power supply 232 Upper step 234 Lower step 236 Curved edge 238 Outer flange 240 Radial inward facing 242 Bottom wall 244 Peripheral edge 25 0 Groove pattern 252 Radial Arm 254 annular arm 26 200807606 256 raised platform 257 arcuate side edge 258 table 259 arcuate dicing 260 radially inner gas sealing edge 2 6 0 a arcuate ridged region 260b arcuate ridge region 2 60 c arcuate ridge region 262 radially outward Gas seal side

27

Claims (1)

200807606 ., - ... - r . X. Patent application scope: .-; ·, . - - - 1. A cooling ring for processing a chamber, the processing chamber including a top surface rain a base and an edge ring, the top surface having a loss-receiving portion for supporting the electrostatic chuck and a peripheral portion, the electrostatic chuck comprising a ceramic disk, the ceramic disk having a a peripheral wall frame of the first and second steps, the edge ring being disposed on a second step of the ceramic disk, the clamping ring comprising: , . . . a) a soil-shaped body having a support a top surface of the edge ring and a bottom surface having a plurality of apertures, the plurality of apertures of the bottom surface being adapted to be secured to a peripheral portion of a top surface of the base; b) an upper lip, inwardly radial Extending to be placed on a first step of a peripheral ledge of the ceramic disc; e) a radially outer side surface; and d) a foot extending downwardly from the radially outer side surface to be disposed The peripheral portion of the top surface of the base. 2. The clamping ring of claim 1, wherein the annular main body is fixed to a peripheral portion of the top surface * of the base by a screw or bolt matching the hole. 3. The clamping ring of claim 1 wherein said upper lip portion includes a downwardly extending projection disposed on a first step of a peripheral wall of said ceramic disk. 28 200807606 ^ ^ The clamping ring of claim 3, wherein the annular main body includes a bottom concave portion extending radially outward from the downwardly extending projection. - ' . . . . . - - - .... - * .-5, the clamping ring described in claim 1 of the patent application, the missing ring, the portion comprising a ceramic disc disposed on the ceramic disc a bottom surface on the first step of the peripheral portion. The holding ring of claim 5, wherein the bottom surface contains a polymer. 7. The clamp ring of claim 6 wherein said polymer comprises polyimine. 8. The clamping ring of claim 1, wherein the lost loop comprises metal or ceramic. 9. The clamp ring of claim 8 wherein said ceramic comprises alumina. 10, an edge ring for a processing chamber, the processing chamber having: i) a base; a static loss plate on the base, the static loss plate comprising a pottery 29 200807606 placed in the pottery In the disc, the pottery disc includes a peripheral ledge having a step; and a clamping ring having an upper lip, an outer surface, and a top surface, the upper lip Extending radially inwardly on the step of the peripheral ledge of the disc, the edge ring comprising: a foot; a) a belt comprising a '. :-- a surface disposed on a top surface of the lost loop b) - an annular outer wall, . . - -. : · ' surrounds the outer side of the clamping ring and the step. c) an inner flange 'covering the edge ring of the side wall ledge of the ceramic disc, wherein the belt contains ceramic as described in claim 10 of the scope of the patent application. 12. The side as described in claim 11 of the patent scope contains a quartz\edge ring, wherein the ceramic change is a base · ··, ~Shuang Li® I, a static chuck on the base, a ceramic round ship The static electricity, the ceramic disc comprises a guise and iii) - + from the wide * order of the circumference and the outer side surface of the gossip ~ 顼 surface, the upper lip from the 乂 表面 surface # 30 e) - outer 200807606 to be placed on the edge of the ceramic circle, the step of the peripheral ledge, long, comprising: a) a wedge-shaped top surface of the clamping ring 'including a sloping top table And a b) a:: Λ surface; God, the inner flange includes a flange, a table from the wedge-shaped belt inwardly facing the peripheral ledge of the radial disc, the foot, the foot can be placed in The outer flange includes a rim 'from the wedge-shaped strip to the outer diameter pouch covering the lining from the stupid side, the radially outward facing side surface. 14. An edge ring as described in claim i3, wherein each edge includes a bottom surface that is gradually raised with respect to a lower surface of the wedge v. . : ' ' ......... !5, such as the application of the patent Yu Geluo, #园弟13 item of the edge ring, where i /.a M, the steps and the next step i 6, The edge ring of claim 13, wherein the edge has an arcuate edge, and the edge and the inclined upper surface of the wedge band j 17 are as described in claim 13 of the patent application. An edge ring, wherein the edge includes a bottom wall that extends downwardly with respect to a lower surface of the folded wedge. Covering the grounding of the ceramic grounding, the inner convex, the inner convex, the upper inner convex, and the inner convex. The edge ring of the convex coin 1 J, the Θ includes the perimeter of the radially inward J ,, the radially inward circumscribing and the smashing. The edge 31 200807606 18, as claimed in the patent scope The edge ring of item 13 is characterized in that the outer flange has a beveled/sloped perimeter edge. 19. The edge ring of claim 13, wherein the wedge tape comprises ceramic. 20. The edge ring of claim 19, wherein the study comprises quartz. An electric chuck for accommodating a substrate in a processing chamber, the electrostatic chuck comprising: a) a ceramic disc comprising: I) a substrate receiving surface having a plurality of mesa projection platforms separated by a groove pattern; II) a plurality of heat transfer gas conduits passing through the ceramic disk and on the substrate receiving surface The peripheral bees and the center of the groove pattern are terminated, and the gas guides can provide heat transfer gas to different regions of the substrate receiving surface; • a) a perimeter ledge having a first step and a second step, the second step being radially outward from the first step and lower than the first step; b) the cladding pole embedded in the ceramic disc To generate an electrostatic force so that 32 200807606 maintains the substrate disposed on the substrate receiving surface. 22. The floppy disk of claim 21, wherein the plurality of mesa projection platforms each comprise from about 10 to about 1000 mesas. 23. The chuck of claim 21, wherein the table top is a raised cylindrical protrusion. The chuck of claim 21, wherein the table mask has an average diameter of from about 5 microns to about 50 microns. 25. The chuck of claim 21, wherein the table mask has a height of from about 0.5 mm to about 5 mm. The chuck of claim 21, wherein the groove pattern comprises radial arms and an annular arm interconnected to each other. 27. The chuck of claim 21, wherein the perimeter ridge terminates at an arcuate cut. 28. The chuck of claim 27, further comprising a radially inner gas sealing edge and a radially outer gas sealing edge surrounding the peripheral weir. The chuck of claim 21, wherein the center 终止 terminates at the intersection of the center and the radial grooves. 30. The chuck of claim 21, wherein the ceramic disk comprises alumina, aluminum nitride, cerium oxide, carbonized dream, tantalum nitride, oxidized, oxidized, or a mixture thereof. 34