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TW200802430A - Integrated circuit inductor with small floating metal structures - Google Patents

Integrated circuit inductor with small floating metal structures

Info

Publication number
TW200802430A
TW200802430A TW096100511A TW96100511A TW200802430A TW 200802430 A TW200802430 A TW 200802430A TW 096100511 A TW096100511 A TW 096100511A TW 96100511 A TW96100511 A TW 96100511A TW 200802430 A TW200802430 A TW 200802430A
Authority
TW
Taiwan
Prior art keywords
integrated circuit
inductive element
circuit inductor
ground shield
substrate
Prior art date
Application number
TW096100511A
Other languages
Chinese (zh)
Inventor
Lukas Frederik Tiemeijer
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200802430A publication Critical patent/TW200802430A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5225—Shielding layers formed together with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)

Abstract

The present invention relates to an integrated circuit inductor structure comprising a plurality of dummy metal fill patterns as required in modern integrated circuit processes, an inductive element, a substrate and an optional patterned ground shield. Starting from our physics-based wide-band predictive compact model, a higher quality factor will be achieved when the size of the dummy metal fill patterns and the width of the patterned ground shield will be chosen as inversely proportional to the increasing operating frequency of the inductive element. The performance of such a circuit inductor can be further improved by using a high resistivity substrate as well as by locally blocking any well implant located on top of the substrate. Additionally, a higher resonant frequency can be obtained while disposing the dummy metal fill patterns within a predetermined distance of at least three times a distance to the patterned ground shield away from the inductive element.
TW096100511A 2006-01-09 2007-01-05 Integrated circuit inductor with small floating metal structures TW200802430A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP06100157 2006-01-09

Publications (1)

Publication Number Publication Date
TW200802430A true TW200802430A (en) 2008-01-01

Family

ID=37864476

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096100511A TW200802430A (en) 2006-01-09 2007-01-05 Integrated circuit inductor with small floating metal structures

Country Status (2)

Country Link
TW (1) TW200802430A (en)
WO (1) WO2007080531A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2266121B1 (en) 2008-04-10 2015-06-10 Nxp B.V. 8-shaped inductor
EP2421011A1 (en) * 2010-08-19 2012-02-22 Nxp B.V. Symmetrical inductor
EP3937232B1 (en) * 2019-03-29 2025-01-22 Huawei Technologies Co., Ltd. Inductive wiring architecture, integrated circuit, and communication device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001052928A (en) * 1999-08-17 2001-02-23 Tif:Kk Inductor element
FR2810451A1 (en) * 2000-06-20 2001-12-21 Koninkl Philips Electronics Nv INTEGRATED CIRCUIT INCLUDING A HIGH QUALITY FACTOR INDUCTIVE ELEMENT AND HAVING HIGH COMPACITY
CN100468717C (en) * 2002-12-13 2009-03-11 Nxp股份有限公司 Planar inductive element and integrated circuit comprising planar inductive element
US20050001708A1 (en) * 2003-06-23 2005-01-06 Kesling Dawson W. Dummy metal filling
JP4150689B2 (en) * 2004-03-29 2008-09-17 富士通株式会社 Multilayer wiring structure formed in a semiconductor integrated circuit device
JP4795667B2 (en) * 2004-11-05 2011-10-19 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
WO2007080531A1 (en) 2007-07-19

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