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TW200801211A - Arc source and magnet arrangement - Google Patents

Arc source and magnet arrangement

Info

Publication number
TW200801211A
TW200801211A TW096116738A TW96116738A TW200801211A TW 200801211 A TW200801211 A TW 200801211A TW 096116738 A TW096116738 A TW 096116738A TW 96116738 A TW96116738 A TW 96116738A TW 200801211 A TW200801211 A TW 200801211A
Authority
TW
Taiwan
Prior art keywords
target
arc source
magnet system
front side
magnet
Prior art date
Application number
TW096116738A
Other languages
English (en)
Inventor
Siegfried Krassnitzer
Juerg Hagmann
Juergen Gwehenberger
Original Assignee
Oerlikon Trading Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Trading Ag filed Critical Oerlikon Trading Ag
Publication of TW200801211A publication Critical patent/TW200801211A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32614—Consumable cathodes for arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture And Refinement Of Metals (AREA)
TW096116738A 2006-05-16 2007-05-11 Arc source and magnet arrangement TW200801211A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH7922006 2006-05-16

Publications (1)

Publication Number Publication Date
TW200801211A true TW200801211A (en) 2008-01-01

Family

ID=36636634

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096116738A TW200801211A (en) 2006-05-16 2007-05-11 Arc source and magnet arrangement

Country Status (6)

Country Link
US (1) US9165749B2 (zh)
EP (2) EP2466614A3 (zh)
BR (1) BRPI0711644B1 (zh)
RU (1) RU2448388C2 (zh)
TW (1) TW200801211A (zh)
WO (1) WO2007131944A2 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104046943A (zh) * 2013-03-15 2014-09-17 蒸汽技术公司 低压电弧等离子体浸没涂层气相沉积和离子处理
TWI611734B (zh) * 2011-02-25 2018-01-11 東麗股份有限公司 電漿處理用磁控管電極、磁控管濺鍍電極及使用該電極之成膜方法
US10675690B2 (en) 2015-09-04 2020-06-09 Osg Corporation Hard coating and hard coating-covered member

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009008161A1 (de) 2009-02-09 2010-08-12 Oerlikon Trading Ag, Trübbach Modifizierbare Magnetkonfiguration für Arc-Verdampfungsquellen
ATE527390T1 (de) 2009-03-30 2011-10-15 Oerlikon Trading Ag Verfahren zur vorbehandlung von substraten fuer pvd verfahren
DE102010020737A1 (de) * 2010-05-17 2011-11-17 Oerlikon Trading Ag, Trübbach Target für Funkenverdampfung mit räumlicher Begrenzung der Ausbreitung des Funkens
CN102859027A (zh) * 2010-05-04 2013-01-02 欧瑞康贸易股份公司(特吕巴赫) 用于借助陶瓷靶进行电弧气相沉积的方法
KR20150103382A (ko) * 2011-02-23 2015-09-10 가부시키가이샤 고베 세이코쇼 아크식 증발원
JP5946337B2 (ja) * 2012-06-20 2016-07-06 株式会社神戸製鋼所 アーク式蒸発源
US9412569B2 (en) 2012-09-14 2016-08-09 Vapor Technologies, Inc. Remote arc discharge plasma assisted processes
US9793098B2 (en) 2012-09-14 2017-10-17 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US10056237B2 (en) * 2012-09-14 2018-08-21 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
JP6403269B2 (ja) * 2014-07-30 2018-10-10 株式会社神戸製鋼所 アーク蒸発源
EP3692183A1 (en) * 2017-10-03 2020-08-12 Oerlikon Surface Solutions AG, Pfäffikon Arc source with confined magnetic field
EP4263898A1 (en) * 2020-12-16 2023-10-25 Oerlikon Surface Solutions AG, Pfäffikon Hard cubic al-rich altin coating layers produced by pvd from ceramic targets
DE102022118927A1 (de) * 2022-07-28 2024-02-08 Rainer Cremer Verfahren zum Verdampfen einer Kathode in einem Vakuumlichtbogenverdampfer

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US4673A (en) * 1846-07-28 James g
US3689740A (en) 1971-04-29 1972-09-05 Westinghouse Electric Corp Arc heater apparatus employing fluid-cooled electrodes having permanent magnets to drive the arc therefrom
US4265729A (en) 1978-09-27 1981-05-05 Vac-Tec Systems, Inc. Magnetically enhanced sputtering device
CH648690A5 (de) * 1980-10-14 1985-03-29 Balzers Hochvakuum Kathodenanordnung zur abstaeubung von material von einem target in einer kathodenzerstaeubungsanlage.
US4444635A (en) * 1981-07-22 1984-04-24 Hitachi, Ltd. Film forming method
US4673477A (en) 1984-03-02 1987-06-16 Regents Of The University Of Minnesota Controlled vacuum arc material deposition, method and apparatus
US4724058A (en) * 1984-08-13 1988-02-09 Vac-Tec Systems, Inc. Method and apparatus for arc evaporating large area targets
US5298136A (en) 1987-08-18 1994-03-29 Regents Of The University Of Minnesota Steered arc coating with thick targets
US4892633A (en) * 1988-11-14 1990-01-09 Vac-Tec Systems, Inc. Magnetron sputtering cathode
RU2106716C1 (ru) * 1992-04-27 1998-03-10 Равиль Кяшшафович Яфаров Установка для микроволновой вакуумно-плазменной обработки конденсированных сред
US5262028A (en) * 1992-06-01 1993-11-16 Sierra Applied Sciences, Inc. Planar magnetron sputtering magnet assembly
US5922176A (en) * 1992-06-12 1999-07-13 Donnelly Corporation Spark eliminating sputtering target and method for using and making same
DE4329155A1 (de) 1993-08-30 1995-03-02 Bloesch W Ag Magnetfeldkathode
EP0899773B1 (en) * 1997-08-30 2004-06-09 United Technologies Corporation Cathodic arc coater with an apparatus for driving the arc
US6036828A (en) * 1997-08-30 2000-03-14 United Technologies Corporation Apparatus for steering the arc in a cathodic arc coater
DE19853943B4 (de) * 1997-11-26 2006-04-20 Vapor Technologies, Inc. (Delaware Corporation), Longmont Katode zur Zerstäubung oder Bogenaufdampfung sowie Vorrichtung zur Beschichtung oder Ionenimplantation mit einer solchen Katode
WO2000016373A1 (de) * 1998-09-14 2000-03-23 Unaxis Trading Ag Targetanordnung für eine arc-verdampfungs-kammer
TWI242049B (en) 1999-01-14 2005-10-21 Kobe Steel Ltd Vacuum arc evaporation source and vacuum arc vapor deposition apparatus
CA2305938C (en) 2000-04-10 2007-07-03 Vladimir I. Gorokhovsky Filtered cathodic arc deposition method and apparatus
WO2002003402A1 (de) 2000-07-06 2002-01-10 Unaxis Balzers Aktiengesellschaft Anordnung zur ausrichtung der magnetisierungsrichtung magnetischer schichten
RU2196395C1 (ru) * 2001-05-30 2003-01-10 Александров Андрей Федорович Плазменный реактор и устройство для генерации плазмы (варианты)
DE10127013A1 (de) 2001-06-05 2002-12-12 Gabriel Herbert M Lichtbogen-Verdampfungsvorrichtung
TWI229138B (en) * 2001-06-12 2005-03-11 Unaxis Balzers Ag Magnetron-sputtering source
CH695807A5 (de) 2001-11-20 2006-08-31 Unaxis Balzers Ag Quelle für Vakuumbehandlungsprozess.
US20060175190A1 (en) * 2002-12-19 2006-08-10 Unaxis Balzers Ltd. Vacuum arc source comprising a device for generating a magnetic field

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI611734B (zh) * 2011-02-25 2018-01-11 東麗股份有限公司 電漿處理用磁控管電極、磁控管濺鍍電極及使用該電極之成膜方法
CN104046943A (zh) * 2013-03-15 2014-09-17 蒸汽技术公司 低压电弧等离子体浸没涂层气相沉积和离子处理
CN104046943B (zh) * 2013-03-15 2018-06-05 蒸汽技术公司 低压电弧等离子体浸没涂层气相沉积和离子处理
US10675690B2 (en) 2015-09-04 2020-06-09 Osg Corporation Hard coating and hard coating-covered member

Also Published As

Publication number Publication date
WO2007131944A3 (de) 2008-03-06
BRPI0711644B1 (pt) 2019-03-19
US20080110749A1 (en) 2008-05-15
US9165749B2 (en) 2015-10-20
BRPI0711644A2 (pt) 2011-11-29
WO2007131944A2 (de) 2007-11-22
EP2466614A2 (de) 2012-06-20
RU2448388C2 (ru) 2012-04-20
EP2466614A3 (de) 2013-05-22
RU2008149525A (ru) 2010-06-27
EP2018653B1 (de) 2014-08-06
EP2018653A2 (de) 2009-01-28

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