TW200746369A - Method of manufacturing split gate flash device - Google Patents
Method of manufacturing split gate flash deviceInfo
- Publication number
- TW200746369A TW200746369A TW095120521A TW95120521A TW200746369A TW 200746369 A TW200746369 A TW 200746369A TW 095120521 A TW095120521 A TW 095120521A TW 95120521 A TW95120521 A TW 95120521A TW 200746369 A TW200746369 A TW 200746369A
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- substrate
- oxide
- oxide layer
- voltage device
- Prior art date
Links
Landscapes
- Non-Volatile Memory (AREA)
Abstract
A method of manufacturing a split gate flash device is provided. A substrate included a memory cell region, a high voltage device region and a low voltage device region is provided and a tunneling dielectric layer, a plurality of stacked gate structures a first oxide layer and a conductive layer are formed over the substrate in the memory cell region in turn. A first in-situ steam generated oxidation process is performing so as to form a second oxide layer over the substrate and then the second oxide layer in the memory cell region and the low voltage device region is removed. A second in-situ steam generated oxidation process is performing so as to form a third oxide layer over the substrate. Therefore, the substrate in the high voltage region possesses the second oxide region and the third oxide region thereon and the substrate in the low voltage region possesses the third oxide region thereon. A plurality of gates is formed in the high voltage device region and the low voltage device region. The third oxide layer and a portion of the conductive material layer are removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW95120521A TWI304251B (en) | 2006-06-09 | 2006-06-09 | Method of manufacturing split gate flash device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW95120521A TWI304251B (en) | 2006-06-09 | 2006-06-09 | Method of manufacturing split gate flash device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200746369A true TW200746369A (en) | 2007-12-16 |
| TWI304251B TWI304251B (en) | 2008-12-11 |
Family
ID=45070898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW95120521A TWI304251B (en) | 2006-06-09 | 2006-06-09 | Method of manufacturing split gate flash device |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI304251B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI615922B (en) * | 2017-05-26 | 2018-02-21 | 華邦電子股份有限公司 | Method of manufacturing semiconductor memory device |
| US10325918B2 (en) | 2016-11-29 | 2019-06-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10438958B2 (en) | 2017-05-26 | 2019-10-08 | Winbond Electronics Corp. | Method for manufacturing semiconductor memory device |
| US10943996B2 (en) | 2016-11-29 | 2021-03-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing semiconductor device including non-volatile memories and logic devices |
| US10950611B2 (en) | 2016-11-29 | 2021-03-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103578951B (en) * | 2012-08-09 | 2016-04-06 | 华邦电子股份有限公司 | Manufacturing method of semiconductor element |
-
2006
- 2006-06-09 TW TW95120521A patent/TWI304251B/en active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10325918B2 (en) | 2016-11-29 | 2019-06-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10879253B2 (en) | 2016-11-29 | 2020-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10943996B2 (en) | 2016-11-29 | 2021-03-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing semiconductor device including non-volatile memories and logic devices |
| US10950611B2 (en) | 2016-11-29 | 2021-03-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10950715B2 (en) | 2016-11-29 | 2021-03-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing semiconductor device including non-volatile memories and logic devices |
| US11594620B2 (en) | 2016-11-29 | 2023-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US11825651B2 (en) | 2016-11-29 | 2023-11-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and manufacturing method thereof |
| US12058856B2 (en) | 2016-11-29 | 2024-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and manufacturing method thereof |
| TWI615922B (en) * | 2017-05-26 | 2018-02-21 | 華邦電子股份有限公司 | Method of manufacturing semiconductor memory device |
| US10438958B2 (en) | 2017-05-26 | 2019-10-08 | Winbond Electronics Corp. | Method for manufacturing semiconductor memory device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI304251B (en) | 2008-12-11 |
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