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TW200742768A - Process for producing ultra-planarized surface indium-tin oxides - Google Patents

Process for producing ultra-planarized surface indium-tin oxides

Info

Publication number
TW200742768A
TW200742768A TW095116387A TW95116387A TW200742768A TW 200742768 A TW200742768 A TW 200742768A TW 095116387 A TW095116387 A TW 095116387A TW 95116387 A TW95116387 A TW 95116387A TW 200742768 A TW200742768 A TW 200742768A
Authority
TW
Taiwan
Prior art keywords
substrate
thin film
planarized surface
tin oxides
producing ultra
Prior art date
Application number
TW095116387A
Other languages
Chinese (zh)
Inventor
Ken-Chang Tien
Tai-Nong Sun
Kuang-Yang Liao
An-Shyh Chang
Original Assignee
Chung Shan Inst Of Science
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chung Shan Inst Of Science filed Critical Chung Shan Inst Of Science
Priority to TW095116387A priority Critical patent/TW200742768A/en
Publication of TW200742768A publication Critical patent/TW200742768A/en

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  • Manufacturing Of Electric Cables (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

The present invention mainly provides the process for producing ultra-planarized surface indium-tin oxides, wherein the surface of a substrate is coated a thin film by a sol-gel method in order to improve the surface of the substrate in favor of the subsequent crystallization growth direction. The ITO layer is then deposited on the thin film of the substrate at a predetermined height by the magnetron sputtering method at room temperature. By utilizing the above-mentioned process, the ITO thin film layer can be deposited about 200 nm in thickness at 200 Watt of sputtering power without the need of heating. The disclosed invention can simplify the process and reduce the surface roughness efficiently to achieve the effect of planarized surface.
TW095116387A 2006-05-09 2006-05-09 Process for producing ultra-planarized surface indium-tin oxides TW200742768A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095116387A TW200742768A (en) 2006-05-09 2006-05-09 Process for producing ultra-planarized surface indium-tin oxides

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095116387A TW200742768A (en) 2006-05-09 2006-05-09 Process for producing ultra-planarized surface indium-tin oxides

Publications (1)

Publication Number Publication Date
TW200742768A true TW200742768A (en) 2007-11-16

Family

ID=57914186

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095116387A TW200742768A (en) 2006-05-09 2006-05-09 Process for producing ultra-planarized surface indium-tin oxides

Country Status (1)

Country Link
TW (1) TW200742768A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111149230A (en) * 2017-08-04 2020-05-12 维特罗平板玻璃有限责任公司 Flash Annealing of Transparent Conductive Oxides and Semiconductor Coatings
CN116409939A (en) * 2022-11-16 2023-07-11 中建材玻璃新材料研究院集团有限公司 A method for preparing ITO transparent conductive film glass by liquid phase roller coating magnetron sputtering

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111149230A (en) * 2017-08-04 2020-05-12 维特罗平板玻璃有限责任公司 Flash Annealing of Transparent Conductive Oxides and Semiconductor Coatings
CN111149230B (en) * 2017-08-04 2023-09-19 维特罗平板玻璃有限责任公司 Flash Annealing of Transparent Conducting Oxides and Semiconducting Coatings
US12032124B2 (en) 2017-08-04 2024-07-09 Vitro Flat Glass Llc Flash annealing of transparent conductive oxide and semiconductor coatings
CN116409939A (en) * 2022-11-16 2023-07-11 中建材玻璃新材料研究院集团有限公司 A method for preparing ITO transparent conductive film glass by liquid phase roller coating magnetron sputtering

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