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TW200741883A - Apparatus for laser annealing of large substrates and method for laser annealing for large substrates - Google Patents

Apparatus for laser annealing of large substrates and method for laser annealing for large substrates

Info

Publication number
TW200741883A
TW200741883A TW096109812A TW96109812A TW200741883A TW 200741883 A TW200741883 A TW 200741883A TW 096109812 A TW096109812 A TW 096109812A TW 96109812 A TW96109812 A TW 96109812A TW 200741883 A TW200741883 A TW 200741883A
Authority
TW
Taiwan
Prior art keywords
section
laser annealing
substrate
large substrates
scanning
Prior art date
Application number
TW096109812A
Other languages
Chinese (zh)
Inventor
Joerg Walther
Markus Zenzinger
Willi Anderl
Wolfgang Seifert
Rafael Egger
Marczuk Piotr
Tritschler Thorsten
Original Assignee
Zeiss Carl Laser Optics Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Laser Optics Gmbh filed Critical Zeiss Carl Laser Optics Gmbh
Publication of TW200741883A publication Critical patent/TW200741883A/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0652—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

The invention relates to an apparatus for laser annealing of large substrates comprising an optical device for generating a narrow illuminating line (31) on an illumination plane (36) of said substrate (32), said illumination line (31) being generated from a laser beam and having a cross-section with an expansion in a first direction and an expansion in a second direction, whereby said expansion in said first direction exceeds said expansion in said second direction by amultiple, and a scanning device being constructed for scanning a first section of said illumination plane of said substrate with said illumination line in said second section. According to the invention the apparatus comprises a rotating device for rotating (39) said substrate (32) relative to said illuminating line (31) by 180DEG about an axis (38) of rotation being normal to said illumination plane (36) after scanning said first section (37), whereby said scanning device is constructed for scanning a second section of said illumination plane (36) of said substrate (32) being adjacent to said first section of said illumination plane (36) of said substrate (32) with said illuminating line (31) in said second direction (y).
TW096109812A 2006-04-21 2007-03-21 Apparatus for laser annealing of large substrates and method for laser annealing for large substrates TW200741883A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74533306P 2006-04-21 2006-04-21

Publications (1)

Publication Number Publication Date
TW200741883A true TW200741883A (en) 2007-11-01

Family

ID=38179713

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096109812A TW200741883A (en) 2006-04-21 2007-03-21 Apparatus for laser annealing of large substrates and method for laser annealing for large substrates

Country Status (5)

Country Link
EP (1) EP2010355A1 (en)
JP (1) JP2009534820A (en)
KR (2) KR20080113121A (en)
TW (1) TW200741883A (en)
WO (1) WO2007122061A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI722722B (en) * 2015-07-29 2021-03-21 美商應用材料股份有限公司 Rotating substrate laser anneal

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DE102007057868B4 (en) * 2007-11-29 2020-02-20 LIMO GmbH Device for generating a linear intensity distribution
DE102009021251A1 (en) 2009-05-14 2010-11-18 Limo Patentverwaltung Gmbh & Co. Kg Device for shaping laser radiation and laser device with such a device
DE102012012883B4 (en) * 2012-06-28 2015-11-12 Innolas Solutions Gmbh Laser processing device for laser processing of a starting substrate for the production of solar cells
JP5843292B2 (en) * 2013-03-21 2016-01-13 株式会社日本製鋼所 Annealing semiconductor substrate manufacturing method, scanning apparatus, and laser processing apparatus
FR3012264B1 (en) * 2013-10-21 2017-04-21 Saint Gobain MODULAR LASER APPARATUS
CN109477970B (en) * 2016-07-27 2022-06-28 通快激光有限责任公司 Laser line irradiation
JP6887234B2 (en) * 2016-09-21 2021-06-16 株式会社日本製鋼所 Laser irradiation device, laser irradiation method, and manufacturing method of semiconductor device
JP6968243B2 (en) * 2016-10-14 2021-11-17 株式会社日本製鋼所 Laser irradiation device, laser irradiation method, and manufacturing method of semiconductor device
US11433486B2 (en) * 2016-11-03 2022-09-06 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus, stack processing apparatus, and laser processing method
DE102017213168A1 (en) 2017-07-31 2019-01-31 Carl Zeiss Smt Gmbh Method for treating an EUV optical wavelength reflective element, method for its production and device for treatment
DE102018115126B4 (en) * 2018-06-22 2020-02-13 Trumpf Laser- Und Systemtechnik Gmbh Optical arrangement for converting an input laser steel into a line-like output beam and laser system with such an optical arrangement
JP7159363B2 (en) * 2021-01-21 2022-10-24 Ｊｓｗアクティナシステム株式会社 Laser irradiation device
JP7645533B2 (en) 2021-03-19 2025-03-14 株式会社片岡製作所 Laser processing apparatus and laser processing method

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JPH10209069A (en) * 1997-01-17 1998-08-07 Sumitomo Heavy Ind Ltd Method and equipment for laser annealing
KR100430231B1 (en) * 1998-10-02 2004-07-19 엘지.필립스 엘시디 주식회사 Laser Annealing Equipment
JP2002141301A (en) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp Optical system for laser annealing and laser annealing apparatus using the same
TWI289896B (en) * 2001-11-09 2007-11-11 Semiconductor Energy Lab Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
JP3934536B2 (en) * 2001-11-30 2007-06-20 株式会社半導体エネルギー研究所 Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device
US6747245B2 (en) * 2002-11-06 2004-06-08 Ultratech Stepper, Inc. Laser scanning apparatus and methods for thermal processing
JP4838982B2 (en) * 2004-01-30 2011-12-14 株式会社 日立ディスプレイズ Laser annealing method and laser annealing apparatus
US8525075B2 (en) * 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI722722B (en) * 2015-07-29 2021-03-21 美商應用材料股份有限公司 Rotating substrate laser anneal

Also Published As

Publication number Publication date
WO2007122061A1 (en) 2007-11-01
KR20080113077A (en) 2008-12-26
EP2010355A1 (en) 2009-01-07
KR20080113121A (en) 2008-12-26
JP2009534820A (en) 2009-09-24

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