TW200736702A - Method of manufacturing liquid crystal alignment film - Google Patents
Method of manufacturing liquid crystal alignment filmInfo
- Publication number
- TW200736702A TW200736702A TW095109405A TW95109405A TW200736702A TW 200736702 A TW200736702 A TW 200736702A TW 095109405 A TW095109405 A TW 095109405A TW 95109405 A TW95109405 A TW 95109405A TW 200736702 A TW200736702 A TW 200736702A
- Authority
- TW
- Taiwan
- Prior art keywords
- alignment film
- liquid crystal
- inorganic material
- layer
- manufacturing liquid
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000011147 inorganic material Substances 0.000 abstract 4
- 229910010272 inorganic material Inorganic materials 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 2
- 239000011368 organic material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
Landscapes
- Liquid Crystal (AREA)
Abstract
A method of manufacturing liquid crystal alignment film includes performing an ion implantation process after providing a layer of organic or inorganic material on a substrate for performing an alignment treatment on the layer of organic or inorganic material is provided. Since the alignment treatment is a kind of non-contact method, it can lower the probability of damaging the organic alignment film and prevent generating powders and particles. Furthermore, the layer of inorganic material is formed on the substrate prior to the alignment treatment, so the inorganic material layer can be patterned before the alignment treatment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW095109405A TW200736702A (en) | 2006-03-20 | 2006-03-20 | Method of manufacturing liquid crystal alignment film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW095109405A TW200736702A (en) | 2006-03-20 | 2006-03-20 | Method of manufacturing liquid crystal alignment film |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200736702A true TW200736702A (en) | 2007-10-01 |
Family
ID=57913601
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095109405A TW200736702A (en) | 2006-03-20 | 2006-03-20 | Method of manufacturing liquid crystal alignment film |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW200736702A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI671576B (en) * | 2016-01-14 | 2019-09-11 | 美商豪威科技股份有限公司 | Method for forming an alignment layer of a liquid crystal display device and display device manufactured thereby |
-
2006
- 2006-03-20 TW TW095109405A patent/TW200736702A/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI671576B (en) * | 2016-01-14 | 2019-09-11 | 美商豪威科技股份有限公司 | Method for forming an alignment layer of a liquid crystal display device and display device manufactured thereby |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI263465B (en) | Pattern formation method and pattern formation apparatus, method for manufacturing device, electro-optical device, electronic device, and method for manufacturing active matrix substrate | |
WO2009137604A3 (en) | Method of forming an electronic device using a separation-enhancing species | |
SG131052A1 (en) | Substrate processing method | |
WO2011028349A3 (en) | Remote hydrogen plasma source of silicon containing film deposition | |
TW200700932A (en) | Lithography process with an enhanced depth-of-depth | |
EP3621416A3 (en) | Two-step, direct-write laser metallization | |
TW200943398A (en) | Novel treatment and system for mask surface chemical reduction | |
SG140481A1 (en) | A method for fabricating micro and nano structures | |
TW200746495A (en) | Light-emitting element, method of manufacturing light-emitting element, and substrate treatment device | |
TW200746441A (en) | Manufacturing method of thin film transistor and thin film transistor, and display | |
WO2008114564A1 (en) | Thin film transistor and method for manufacturing thin film transistor | |
TW200741978A (en) | Stressor integration and method thereof | |
TW200629416A (en) | Semiconductor device and fabrication method thereof | |
TW200729311A (en) | Liquid processing method and liquid processing apparatus | |
TW200737589A (en) | Electronic device and antenna structure thereof | |
TW200608576A (en) | Method for fabricating organic thin film transistor and method for fabricating liquid crystal display device using the same | |
TW200717713A (en) | Advanced forming method and structure of a semiconductor device | |
TW200631477A (en) | Method of forming film pattern, device, method of manufacturing device, electro-optical device, and electronic apparatus | |
TW200729333A (en) | Etching method and etching device | |
TW200943547A (en) | Solution processed electronic devices | |
TW200709942A (en) | Method for forming film pattern, and method for manufacturing device, electro-optical device, electronic apparatus and active matrix substrate | |
TW200746440A (en) | Method for forming metal wiring, method for manufacturing active matrix substrate, device, electro-optical device, and electronic apparatus | |
GB2507896A (en) | Electronic device | |
TW200731018A (en) | Method and apparatus for photoelectrochemical etching | |
TW200618295A (en) | Method of forming thin film transistor |