TW200735206A - Method of dry etching of interlayer insulation film and etching device - Google Patents
Method of dry etching of interlayer insulation film and etching deviceInfo
- Publication number
- TW200735206A TW200735206A TW095108291A TW95108291A TW200735206A TW 200735206 A TW200735206 A TW 200735206A TW 095108291 A TW095108291 A TW 095108291A TW 95108291 A TW95108291 A TW 95108291A TW 200735206 A TW200735206 A TW 200735206A
- Authority
- TW
- Taiwan
- Prior art keywords
- etching
- dry etching
- insulation film
- interlayer insulation
- gas
- Prior art date
Links
- 238000001312 dry etching Methods 0.000 title abstract 3
- 238000005530 etching Methods 0.000 title abstract 3
- 238000009413 insulation Methods 0.000 title abstract 2
- 239000011229 interlayer Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 229910052794 bromium Inorganic materials 0.000 abstract 2
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- 229910052740 iodine Inorganic materials 0.000 abstract 2
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
The object of the present invention is to suppress the occurrence of striation and attain high etching accuracy in carrying out dry etching on an interlayer insulation film covered with a resist mask formed by ArF photolithography. In accordance with the present invention, in the microfabrication of hole and trench through dry etching in a plasma atmosphere, a halogen (F, I, Br) based gas is used as the etching gas, which consists of a gas of fluorinated carbon compound wherein at least one of I and Br is contained in an amount, in terms of atomic composition ratio, of 26% or less based on the total amount of halogens and the rest consists of F.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095108291A TW200735206A (en) | 2006-03-10 | 2006-03-10 | Method of dry etching of interlayer insulation film and etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095108291A TW200735206A (en) | 2006-03-10 | 2006-03-10 | Method of dry etching of interlayer insulation film and etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200735206A true TW200735206A (en) | 2007-09-16 |
| TWI343601B TWI343601B (en) | 2011-06-11 |
Family
ID=45074892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095108291A TW200735206A (en) | 2006-03-10 | 2006-03-10 | Method of dry etching of interlayer insulation film and etching device |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200735206A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110178206A (en) * | 2016-12-30 | 2019-08-27 | 乔治洛德方法研究和开发液化空气有限公司 | For etch semiconductor structure containing iodine compound |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11798811B2 (en) | 2020-06-26 | 2023-10-24 | American Air Liquide, Inc. | Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures |
-
2006
- 2006-03-10 TW TW095108291A patent/TW200735206A/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110178206A (en) * | 2016-12-30 | 2019-08-27 | 乔治洛德方法研究和开发液化空气有限公司 | For etch semiconductor structure containing iodine compound |
| CN110178206B (en) * | 2016-12-30 | 2023-08-18 | 乔治洛德方法研究和开发液化空气有限公司 | Iodine-containing compounds for etching semiconductor structures |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI343601B (en) | 2011-06-11 |
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