TW200733105A - Magnetic memory cell and manufacturing method therefor - Google Patents
Magnetic memory cell and manufacturing method thereforInfo
- Publication number
- TW200733105A TW200733105A TW095105189A TW95105189A TW200733105A TW 200733105 A TW200733105 A TW 200733105A TW 095105189 A TW095105189 A TW 095105189A TW 95105189 A TW95105189 A TW 95105189A TW 200733105 A TW200733105 A TW 200733105A
- Authority
- TW
- Taiwan
- Prior art keywords
- memory cell
- magnetic memory
- manufacturing
- bottom electrode
- method therefor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
Landscapes
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
A magnetic memory cell and a manufacturing method for the magnetic memory cell are provided. In the magnetic memory cell, a modified bottom electrode can be formed with different sizes. The width of the modified bottom electrode is larger than a free layer of the magnetic memory cell, which can significantly lower the impact on switching property from disordered end domains. In addition, by adjusting the thickness of the bottom electrode can significantly improve field distribution over entire free layers, the magnetic memory cell will have a very low writing toggling current.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW95105189A TWI291697B (en) | 2006-02-16 | 2006-02-16 | Magnetic memory cell and manufacturing method therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW95105189A TWI291697B (en) | 2006-02-16 | 2006-02-16 | Magnetic memory cell and manufacturing method therefor |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200733105A true TW200733105A (en) | 2007-09-01 |
TWI291697B TWI291697B (en) | 2007-12-21 |
Family
ID=39461258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW95105189A TWI291697B (en) | 2006-02-16 | 2006-02-16 | Magnetic memory cell and manufacturing method therefor |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI291697B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8644063B2 (en) | 2009-11-30 | 2014-02-04 | Qualcomm Incorporated | Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions |
-
2006
- 2006-02-16 TW TW95105189A patent/TWI291697B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8644063B2 (en) | 2009-11-30 | 2014-02-04 | Qualcomm Incorporated | Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions |
Also Published As
Publication number | Publication date |
---|---|
TWI291697B (en) | 2007-12-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |