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TW200733105A - Magnetic memory cell and manufacturing method therefor - Google Patents

Magnetic memory cell and manufacturing method therefor

Info

Publication number
TW200733105A
TW200733105A TW095105189A TW95105189A TW200733105A TW 200733105 A TW200733105 A TW 200733105A TW 095105189 A TW095105189 A TW 095105189A TW 95105189 A TW95105189 A TW 95105189A TW 200733105 A TW200733105 A TW 200733105A
Authority
TW
Taiwan
Prior art keywords
memory cell
magnetic memory
manufacturing
bottom electrode
method therefor
Prior art date
Application number
TW095105189A
Other languages
Chinese (zh)
Other versions
TWI291697B (en
Inventor
Chien-Chung Hung
Jian-Gang Zhu
Ming-Jer Kao
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW95105189A priority Critical patent/TWI291697B/en
Publication of TW200733105A publication Critical patent/TW200733105A/en
Application granted granted Critical
Publication of TWI291697B publication Critical patent/TWI291697B/en

Links

Landscapes

  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

A magnetic memory cell and a manufacturing method for the magnetic memory cell are provided. In the magnetic memory cell, a modified bottom electrode can be formed with different sizes. The width of the modified bottom electrode is larger than a free layer of the magnetic memory cell, which can significantly lower the impact on switching property from disordered end domains. In addition, by adjusting the thickness of the bottom electrode can significantly improve field distribution over entire free layers, the magnetic memory cell will have a very low writing toggling current.
TW95105189A 2006-02-16 2006-02-16 Magnetic memory cell and manufacturing method therefor TWI291697B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95105189A TWI291697B (en) 2006-02-16 2006-02-16 Magnetic memory cell and manufacturing method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95105189A TWI291697B (en) 2006-02-16 2006-02-16 Magnetic memory cell and manufacturing method therefor

Publications (2)

Publication Number Publication Date
TW200733105A true TW200733105A (en) 2007-09-01
TWI291697B TWI291697B (en) 2007-12-21

Family

ID=39461258

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95105189A TWI291697B (en) 2006-02-16 2006-02-16 Magnetic memory cell and manufacturing method therefor

Country Status (1)

Country Link
TW (1) TWI291697B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8644063B2 (en) 2009-11-30 2014-02-04 Qualcomm Incorporated Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8644063B2 (en) 2009-11-30 2014-02-04 Qualcomm Incorporated Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions

Also Published As

Publication number Publication date
TWI291697B (en) 2007-12-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees