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TW200731532A - Low gate charge structure for power MOSFET - Google Patents

Low gate charge structure for power MOSFET

Info

Publication number
TW200731532A
TW200731532A TW095146797A TW95146797A TW200731532A TW 200731532 A TW200731532 A TW 200731532A TW 095146797 A TW095146797 A TW 095146797A TW 95146797 A TW95146797 A TW 95146797A TW 200731532 A TW200731532 A TW 200731532A
Authority
TW
Taiwan
Prior art keywords
region
type
jfet region
regions
underlying
Prior art date
Application number
TW095146797A
Other languages
Chinese (zh)
Inventor
Fresart Edouard D De
Zhu-Qing Feng
Gan-Ming Qin
Pei-Lin Wang
Xiao-Ping Wang
Hong-Wei Zhou
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200731532A publication Critical patent/TW200731532A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

Methods (101-103, 200-207, 301-310) and apparatus 40, 70) are provided for TMOS devices (40, 70). The device (40, 70) comprises first and second N-type source regions (50), electrically in parallel, located in spaced-apart P-type body regions (46), separated by an N-type JFET region (56) at a first surface (45). Channel regions (47) underlying the gate (53) at the first surface (45), extend from the source regions (50) through portions (47) of the body regions (46) to the JFET region (56) which communicates via an N-epi region (44) with an underlying drain region (42). Ion implantation is used to tailor the doping density (86, 92) in the JFET region (56) so that the net active doping concentration (86, 92) in a central portion (X~0) of the JFET region (56) decreases substantially linearly from the first surface (45) toward the underlying N epi region (44). The linear relationship extends generally to about the same depth (65) as that of the P-type body regions (46) and comes about through the difference ofN (83) and P- (81) type impurity concentration in the JFET region (56).
TW095146797A 2005-12-14 2006-12-14 Low gate charge structure for power MOSFET TW200731532A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2005/045432 WO2007070050A1 (en) 2005-12-14 2005-12-14 Power mosfet and method of making the same

Publications (1)

Publication Number Publication Date
TW200731532A true TW200731532A (en) 2007-08-16

Family

ID=36997662

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095146797A TW200731532A (en) 2005-12-14 2006-12-14 Low gate charge structure for power MOSFET

Country Status (2)

Country Link
TW (1) TW200731532A (en)
WO (1) WO2007070050A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI449174B (en) * 2008-12-11 2014-08-11 Micron Technology Inc Joint field effect transistor device structure and manufacturing method thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8030153B2 (en) 2007-10-31 2011-10-04 Freescale Semiconductor, Inc. High voltage TMOS semiconductor device with low gate charge structure and method of making
CN106898652B (en) * 2017-03-09 2019-06-04 电子科技大学 A silicon carbide VDMOS device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742164A (en) * 1980-08-27 1982-03-09 Hitachi Ltd Semiconductor device
EP0119400B1 (en) * 1983-02-17 1987-08-05 Nissan Motor Co., Ltd. A vertical-type mosfet and method of fabricating the same
US4803533A (en) * 1986-09-30 1989-02-07 General Electric Company IGT and MOSFET devices having reduced channel width

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI449174B (en) * 2008-12-11 2014-08-11 Micron Technology Inc Joint field effect transistor device structure and manufacturing method thereof
US9831246B2 (en) 2008-12-11 2017-11-28 Micron Technology, Inc. JFET device structures and methods for fabricating the same

Also Published As

Publication number Publication date
WO2007070050A1 (en) 2007-06-21

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