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TW200724703A - Magnet structure body and cathode unit for magnetron sputtering apparatus and the magnetron sputtering apparatus - Google Patents

Magnet structure body and cathode unit for magnetron sputtering apparatus and the magnetron sputtering apparatus

Info

Publication number
TW200724703A
TW200724703A TW095140727A TW95140727A TW200724703A TW 200724703 A TW200724703 A TW 200724703A TW 095140727 A TW095140727 A TW 095140727A TW 95140727 A TW95140727 A TW 95140727A TW 200724703 A TW200724703 A TW 200724703A
Authority
TW
Taiwan
Prior art keywords
magnetic
magnetron sputtering
sputtering apparatus
target
structure body
Prior art date
Application number
TW095140727A
Other languages
English (en)
Other versions
TWI396762B (zh
Inventor
Takahiko Kondo
Takanobu Hori
Yasukuni Iwasaki
Nobuo Yoneyama
Original Assignee
Shinmaywa Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinmaywa Ind Ltd filed Critical Shinmaywa Ind Ltd
Publication of TW200724703A publication Critical patent/TW200724703A/zh
Application granted granted Critical
Publication of TWI396762B publication Critical patent/TWI396762B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26Apparatus or processes specially adapted for the manufacture of record carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/345Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452Magnet distribution
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3461Means for shaping the magnetic field, e.g. magnetic shunts

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
TW095140727A 2005-11-04 2006-11-03 A magnet structure and a cathode electrode unit for magnetron sputtering apparatus, and a magnetron sputtering apparatus TWI396762B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005321378A JP2007126722A (ja) 2005-11-04 2005-11-04 マグネトロンスパッタリング装置用の磁石構造体およびカソード電極ユニット並びにマグネトロンスパッタリング装置

Publications (2)

Publication Number Publication Date
TW200724703A true TW200724703A (en) 2007-07-01
TWI396762B TWI396762B (zh) 2013-05-21

Family

ID=38005890

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095140727A TWI396762B (zh) 2005-11-04 2006-11-03 A magnet structure and a cathode electrode unit for magnetron sputtering apparatus, and a magnetron sputtering apparatus

Country Status (7)

Country Link
US (1) US20090229977A1 (zh)
EP (1) EP1944388A4 (zh)
JP (1) JP2007126722A (zh)
KR (1) KR100998634B1 (zh)
CN (1) CN101300372B (zh)
TW (1) TWI396762B (zh)
WO (1) WO2007052737A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI607482B (zh) * 2016-01-08 2017-12-01 Linco Technology Co Ltd Interpolar target cathode device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2306489A1 (en) * 2009-10-02 2011-04-06 Applied Materials, Inc. Method for coating a substrate and coater
JP5873557B2 (ja) * 2012-07-11 2016-03-01 キヤノンアネルバ株式会社 スパッタリング装置および磁石ユニット
JP6048319B2 (ja) * 2013-06-06 2016-12-21 東京エレクトロン株式会社 マグネトロンスパッタ装置
US10056238B2 (en) 2016-06-27 2018-08-21 Cardinal Cg Company Adjustable return path magnet assembly and methods
US10151023B2 (en) 2016-06-27 2018-12-11 Cardinal Cg Company Laterally adjustable return path magnet assembly and methods
WO2018204570A1 (en) 2017-05-04 2018-11-08 Cardinal Cg Company Flexible adjustable return path magnet assembly and methods
JP2019189913A (ja) * 2018-04-26 2019-10-31 京浜ラムテック株式会社 スパッタリングカソード、スパッタリングカソード集合体およびスパッタリング装置
CN110791742A (zh) * 2019-12-20 2020-02-14 横店集团东磁股份有限公司 一种磁控溅射阴极的磁源结构及其调节磁场的方法
JP7510797B2 (ja) * 2020-06-24 2024-07-04 東京エレクトロン株式会社 成膜装置及び成膜方法
CN116190180B (zh) * 2023-01-16 2024-01-30 深圳市矩阵多元科技有限公司 用于pvd平面靶的磁控管装置与磁控溅射设备

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CN87214299U (zh) * 1987-10-12 1988-08-10 浙江大学 分离磁体式平面磁控溅射源
US4964968A (en) * 1988-04-30 1990-10-23 Mitsubishi Kasei Corp. Magnetron sputtering apparatus
US4865708A (en) * 1988-11-14 1989-09-12 Vac-Tec Systems, Inc. Magnetron sputtering cathode
JPH02118750U (zh) * 1989-03-08 1990-09-25
JPH03202464A (ja) * 1989-12-29 1991-09-04 Shin Meiwa Ind Co Ltd スパッタリング電極装置
JPH04276069A (ja) * 1991-03-04 1992-10-01 Ube Ind Ltd スパッタリング方法およびその装置
DE4107505A1 (de) 1991-03-08 1992-09-10 Leybold Ag Verfahren zum betrieb einer sputteranlage und vorrichtung zur durchfuehrung des verfahrens
JPH05179440A (ja) * 1992-01-07 1993-07-20 Ube Ind Ltd マグネトロン型スパッタカソード
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JPH07157874A (ja) * 1993-12-06 1995-06-20 Sumitomo Metal Mining Co Ltd マグネトロンスパッタリング装置
DE19614598A1 (de) * 1996-04-13 1997-10-16 Singulus Technologies Gmbh Vorrichtung zur Kathodenzerstäubung
JP3919266B2 (ja) 1996-09-27 2007-05-23 キヤノンアネルバ株式会社 スパッタリング装置のマグネトロンカソード電極
JP4472065B2 (ja) * 1999-09-13 2010-06-02 キヤノンアネルバ株式会社 マグネトロンカソード、スパッタリング装置及びスパッタリング方法
US6432285B1 (en) * 1999-10-15 2002-08-13 Cierra Photonics, Inc. Planar magnetron sputtering apparatus
JP2001158961A (ja) * 1999-11-30 2001-06-12 Shibaura Mechatronics Corp スパッタリング装置
US6761985B2 (en) * 2000-10-05 2004-07-13 Battelle Memorial Institute Magnetic transparent conducting oxide film and method of making
JP4312400B2 (ja) 2001-06-12 2009-08-12 パナソニック株式会社 スパッタ装置
KR100917463B1 (ko) * 2003-01-15 2009-09-14 삼성전자주식회사 마그네트론 캐소드 및 이를 채용하는 마그네트론 스퍼터링장치
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US20070051616A1 (en) * 2005-09-07 2007-03-08 Le Hienminh H Multizone magnetron assembly
JP2007092136A (ja) * 2005-09-29 2007-04-12 Shin Meiwa Ind Co Ltd マグネトロンスパッタリング用の磁石構造体およびカソード電極ユニット並びにマグネトロンスパッタリング装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI607482B (zh) * 2016-01-08 2017-12-01 Linco Technology Co Ltd Interpolar target cathode device

Also Published As

Publication number Publication date
KR100998634B1 (ko) 2010-12-07
EP1944388A4 (en) 2011-11-02
WO2007052737A1 (ja) 2007-05-10
JP2007126722A (ja) 2007-05-24
CN101300372A (zh) 2008-11-05
EP1944388A1 (en) 2008-07-16
US20090229977A1 (en) 2009-09-17
KR20080042182A (ko) 2008-05-14
CN101300372B (zh) 2011-01-26
TWI396762B (zh) 2013-05-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees