TW200724703A - Magnet structure body and cathode unit for magnetron sputtering apparatus and the magnetron sputtering apparatus - Google Patents
Magnet structure body and cathode unit for magnetron sputtering apparatus and the magnetron sputtering apparatusInfo
- Publication number
- TW200724703A TW200724703A TW095140727A TW95140727A TW200724703A TW 200724703 A TW200724703 A TW 200724703A TW 095140727 A TW095140727 A TW 095140727A TW 95140727 A TW95140727 A TW 95140727A TW 200724703 A TW200724703 A TW 200724703A
- Authority
- TW
- Taiwan
- Prior art keywords
- magnetic
- magnetron sputtering
- sputtering apparatus
- target
- structure body
- Prior art date
Links
- 238000001755 magnetron sputter deposition Methods 0.000 title 2
- 230000004907 flux Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005321378A JP2007126722A (ja) | 2005-11-04 | 2005-11-04 | マグネトロンスパッタリング装置用の磁石構造体およびカソード電極ユニット並びにマグネトロンスパッタリング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200724703A true TW200724703A (en) | 2007-07-01 |
TWI396762B TWI396762B (zh) | 2013-05-21 |
Family
ID=38005890
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095140727A TWI396762B (zh) | 2005-11-04 | 2006-11-03 | A magnet structure and a cathode electrode unit for magnetron sputtering apparatus, and a magnetron sputtering apparatus |
Country Status (7)
Country | Link |
---|---|
US (1) | US20090229977A1 (zh) |
EP (1) | EP1944388A4 (zh) |
JP (1) | JP2007126722A (zh) |
KR (1) | KR100998634B1 (zh) |
CN (1) | CN101300372B (zh) |
TW (1) | TWI396762B (zh) |
WO (1) | WO2007052737A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI607482B (zh) * | 2016-01-08 | 2017-12-01 | Linco Technology Co Ltd | Interpolar target cathode device |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2306489A1 (en) * | 2009-10-02 | 2011-04-06 | Applied Materials, Inc. | Method for coating a substrate and coater |
JP5873557B2 (ja) * | 2012-07-11 | 2016-03-01 | キヤノンアネルバ株式会社 | スパッタリング装置および磁石ユニット |
JP6048319B2 (ja) * | 2013-06-06 | 2016-12-21 | 東京エレクトロン株式会社 | マグネトロンスパッタ装置 |
US10056238B2 (en) | 2016-06-27 | 2018-08-21 | Cardinal Cg Company | Adjustable return path magnet assembly and methods |
US10151023B2 (en) | 2016-06-27 | 2018-12-11 | Cardinal Cg Company | Laterally adjustable return path magnet assembly and methods |
WO2018204570A1 (en) | 2017-05-04 | 2018-11-08 | Cardinal Cg Company | Flexible adjustable return path magnet assembly and methods |
JP2019189913A (ja) * | 2018-04-26 | 2019-10-31 | 京浜ラムテック株式会社 | スパッタリングカソード、スパッタリングカソード集合体およびスパッタリング装置 |
CN110791742A (zh) * | 2019-12-20 | 2020-02-14 | 横店集团东磁股份有限公司 | 一种磁控溅射阴极的磁源结构及其调节磁场的方法 |
JP7510797B2 (ja) * | 2020-06-24 | 2024-07-04 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
CN116190180B (zh) * | 2023-01-16 | 2024-01-30 | 深圳市矩阵多元科技有限公司 | 用于pvd平面靶的磁控管装置与磁控溅射设备 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN87214299U (zh) * | 1987-10-12 | 1988-08-10 | 浙江大学 | 分离磁体式平面磁控溅射源 |
US4964968A (en) * | 1988-04-30 | 1990-10-23 | Mitsubishi Kasei Corp. | Magnetron sputtering apparatus |
US4865708A (en) * | 1988-11-14 | 1989-09-12 | Vac-Tec Systems, Inc. | Magnetron sputtering cathode |
JPH02118750U (zh) * | 1989-03-08 | 1990-09-25 | ||
JPH03202464A (ja) * | 1989-12-29 | 1991-09-04 | Shin Meiwa Ind Co Ltd | スパッタリング電極装置 |
JPH04276069A (ja) * | 1991-03-04 | 1992-10-01 | Ube Ind Ltd | スパッタリング方法およびその装置 |
DE4107505A1 (de) | 1991-03-08 | 1992-09-10 | Leybold Ag | Verfahren zum betrieb einer sputteranlage und vorrichtung zur durchfuehrung des verfahrens |
JPH05179440A (ja) * | 1992-01-07 | 1993-07-20 | Ube Ind Ltd | マグネトロン型スパッタカソード |
US5399253A (en) * | 1992-12-23 | 1995-03-21 | Balzers Aktiengesellschaft | Plasma generating device |
US5415754A (en) * | 1993-10-22 | 1995-05-16 | Sierra Applied Sciences, Inc. | Method and apparatus for sputtering magnetic target materials |
JPH07157874A (ja) * | 1993-12-06 | 1995-06-20 | Sumitomo Metal Mining Co Ltd | マグネトロンスパッタリング装置 |
DE19614598A1 (de) * | 1996-04-13 | 1997-10-16 | Singulus Technologies Gmbh | Vorrichtung zur Kathodenzerstäubung |
JP3919266B2 (ja) | 1996-09-27 | 2007-05-23 | キヤノンアネルバ株式会社 | スパッタリング装置のマグネトロンカソード電極 |
JP4472065B2 (ja) * | 1999-09-13 | 2010-06-02 | キヤノンアネルバ株式会社 | マグネトロンカソード、スパッタリング装置及びスパッタリング方法 |
US6432285B1 (en) * | 1999-10-15 | 2002-08-13 | Cierra Photonics, Inc. | Planar magnetron sputtering apparatus |
JP2001158961A (ja) * | 1999-11-30 | 2001-06-12 | Shibaura Mechatronics Corp | スパッタリング装置 |
US6761985B2 (en) * | 2000-10-05 | 2004-07-13 | Battelle Memorial Institute | Magnetic transparent conducting oxide film and method of making |
JP4312400B2 (ja) | 2001-06-12 | 2009-08-12 | パナソニック株式会社 | スパッタ装置 |
KR100917463B1 (ko) * | 2003-01-15 | 2009-09-14 | 삼성전자주식회사 | 마그네트론 캐소드 및 이를 채용하는 마그네트론 스퍼터링장치 |
US8778144B2 (en) * | 2004-09-28 | 2014-07-15 | Oerlikon Advanced Technologies Ag | Method for manufacturing magnetron coated substrates and magnetron sputter source |
US7428298B2 (en) * | 2005-03-31 | 2008-09-23 | Moxtek, Inc. | Magnetic head for X-ray source |
US20070051616A1 (en) * | 2005-09-07 | 2007-03-08 | Le Hienminh H | Multizone magnetron assembly |
JP2007092136A (ja) * | 2005-09-29 | 2007-04-12 | Shin Meiwa Ind Co Ltd | マグネトロンスパッタリング用の磁石構造体およびカソード電極ユニット並びにマグネトロンスパッタリング装置 |
-
2005
- 2005-11-04 JP JP2005321378A patent/JP2007126722A/ja not_active Withdrawn
-
2006
- 2006-11-02 EP EP06832416A patent/EP1944388A4/en not_active Withdrawn
- 2006-11-02 WO PCT/JP2006/321950 patent/WO2007052737A1/ja active Application Filing
- 2006-11-02 KR KR1020087008372A patent/KR100998634B1/ko not_active Expired - Fee Related
- 2006-11-02 US US12/090,465 patent/US20090229977A1/en not_active Abandoned
- 2006-11-02 CN CN2006800411746A patent/CN101300372B/zh not_active Expired - Fee Related
- 2006-11-03 TW TW095140727A patent/TWI396762B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI607482B (zh) * | 2016-01-08 | 2017-12-01 | Linco Technology Co Ltd | Interpolar target cathode device |
Also Published As
Publication number | Publication date |
---|---|
KR100998634B1 (ko) | 2010-12-07 |
EP1944388A4 (en) | 2011-11-02 |
WO2007052737A1 (ja) | 2007-05-10 |
JP2007126722A (ja) | 2007-05-24 |
CN101300372A (zh) | 2008-11-05 |
EP1944388A1 (en) | 2008-07-16 |
US20090229977A1 (en) | 2009-09-17 |
KR20080042182A (ko) | 2008-05-14 |
CN101300372B (zh) | 2011-01-26 |
TWI396762B (zh) | 2013-05-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |