TW200717705A - Method for forming an isolating trench with a dielectric material - Google Patents
Method for forming an isolating trench with a dielectric materialInfo
- Publication number
- TW200717705A TW200717705A TW095137455A TW95137455A TW200717705A TW 200717705 A TW200717705 A TW 200717705A TW 095137455 A TW095137455 A TW 095137455A TW 95137455 A TW95137455 A TW 95137455A TW 200717705 A TW200717705 A TW 200717705A
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- dielectric material
- isolating trench
- trench
- isolating
- Prior art date
Links
- 239000003989 dielectric material Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/36—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being a FinFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Semiconductor Memories (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/252,878 US7371657B2 (en) | 2005-10-19 | 2005-10-19 | Method for forming an isolating trench with a dielectric material |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200717705A true TW200717705A (en) | 2007-05-01 |
Family
ID=37948645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095137455A TW200717705A (en) | 2005-10-19 | 2006-10-11 | Method for forming an isolating trench with a dielectric material |
Country Status (4)
Country | Link |
---|---|
US (1) | US7371657B2 (zh) |
CN (1) | CN1979799A (zh) |
DE (1) | DE102006048270A1 (zh) |
TW (1) | TW200717705A (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI343633B (en) * | 2007-08-29 | 2011-06-11 | Nanya Technology Corp | Method of forming a self-aligned finfet structure |
KR101069437B1 (ko) * | 2009-07-31 | 2011-09-30 | 주식회사 하이닉스반도체 | 반도체 소자의 소자분리막 형성방법 |
KR20120099448A (ko) | 2009-10-28 | 2012-09-10 | 다우 코닝 코포레이션 | 폴리실란-폴리실라잔 코폴리머 및 이들의 제조방법 및 용도 |
JP5606347B2 (ja) * | 2011-01-27 | 2014-10-15 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP5490949B1 (ja) * | 2013-08-08 | 2014-05-14 | 有限会社 ナプラ | 配線基板及びその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040034134A1 (en) * | 1999-08-26 | 2004-02-19 | Lamb James E. | Crosslinkable fill compositions for uniformly protecting via and contact holes |
US6669799B2 (en) | 2000-01-20 | 2003-12-30 | Polymer Group, Inc. | Durable and drapeable imaged nonwoven fabric |
US6869860B2 (en) | 2003-06-03 | 2005-03-22 | International Business Machines Corporation | Filling high aspect ratio isolation structures with polysilazane based material |
US6864151B2 (en) | 2003-07-09 | 2005-03-08 | Infineon Technologies Ag | Method of forming shallow trench isolation using deep trench isolation |
DE102004021052B3 (de) * | 2004-04-29 | 2005-12-29 | Infineon Technologies Ag | Verfahren zur Herstellung von Trench-DRAM-Speicherzellen und Trench-DRAM-Speicherzellenfeld mit Stegfeldeffekttransistoren mit gekrümmtem Kanal (CFET) |
-
2005
- 2005-10-19 US US11/252,878 patent/US7371657B2/en not_active Expired - Fee Related
-
2006
- 2006-10-11 TW TW095137455A patent/TW200717705A/zh unknown
- 2006-10-12 DE DE102006048270A patent/DE102006048270A1/de not_active Withdrawn
- 2006-10-19 CN CNA2006101627468A patent/CN1979799A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
US20070087516A1 (en) | 2007-04-19 |
US7371657B2 (en) | 2008-05-13 |
CN1979799A (zh) | 2007-06-13 |
DE102006048270A1 (de) | 2007-05-24 |
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