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TW200712484A - Biochemical ion sensor - Google Patents

Biochemical ion sensor

Info

Publication number
TW200712484A
TW200712484A TW094133542A TW94133542A TW200712484A TW 200712484 A TW200712484 A TW 200712484A TW 094133542 A TW094133542 A TW 094133542A TW 94133542 A TW94133542 A TW 94133542A TW 200712484 A TW200712484 A TW 200712484A
Authority
TW
Taiwan
Prior art keywords
biochemical
ion sensor
ion
biochemical ion
gate
Prior art date
Application number
TW094133542A
Other languages
Chinese (zh)
Other versions
TWI307771B (en
Inventor
Liann-Be Chang
Hong-Xi Ke
zhi-yao Wang
Chao-Sung Lai
Yu-Lin Li
qing-quan Xue
Original Assignee
Univ Chang Gung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Chang Gung filed Critical Univ Chang Gung
Priority to TW094133542A priority Critical patent/TW200712484A/en
Publication of TW200712484A publication Critical patent/TW200712484A/en
Application granted granted Critical
Publication of TWI307771B publication Critical patent/TWI307771B/zh

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

This invention provides two types of biochemical ion sensors, one of which using an ion sensitive field effect transistor (ISFET), formed by combining enzymes and the ISFET as the basis, in which the entire gate is replaced with the oxide layer of rare earth elements, or other low-impedance materials of III-V, II-VI and IV-IV groups, such as IRO2, ZnO2, TiO2 and WO3 to provide the biochemical ion sensor with lower electric current leakage and to improve the sensing result and speed. Due to the characteristics of the oxidation layers of rare earth elements, this invention ensures the biochemical ion sensor to have lower electric current leakage while the biochemical ion sensor can have better sensing effect as compared with conventional art. Another type of biochemical ion sensor is an extended gate ion sensitive field effect transistor (EGFET), where the gate portion of a MOSFET is extended to independently form a sensing zone and separate from the MOS capacitor element per se to allow repeated use of the MOS capacitor element. This structure is suitable for the use of the disposable bio-medical sensors to further facilitate commercialization of EGFET.
TW094133542A 2005-09-27 2005-09-27 Biochemical ion sensor TW200712484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW094133542A TW200712484A (en) 2005-09-27 2005-09-27 Biochemical ion sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094133542A TW200712484A (en) 2005-09-27 2005-09-27 Biochemical ion sensor

Publications (2)

Publication Number Publication Date
TW200712484A true TW200712484A (en) 2007-04-01
TWI307771B TWI307771B (en) 2009-03-21

Family

ID=45071662

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094133542A TW200712484A (en) 2005-09-27 2005-09-27 Biochemical ion sensor

Country Status (1)

Country Link
TW (1) TW200712484A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110337586A (en) * 2017-02-22 2019-10-15 豪夫迈·罗氏有限公司 Analyte detector for detecting at least one analyte in at least one fluid sample

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110337586A (en) * 2017-02-22 2019-10-15 豪夫迈·罗氏有限公司 Analyte detector for detecting at least one analyte in at least one fluid sample
US11531003B2 (en) 2017-02-22 2022-12-20 Roche Diagnostics Operations, Inc. Analyte detector for detecting at least one analyte in at least one fluid sample
CN110337586B (en) * 2017-02-22 2023-03-10 豪夫迈·罗氏有限公司 Analyte detector for detecting at least one analyte in at least one fluid sample

Also Published As

Publication number Publication date
TWI307771B (en) 2009-03-21

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MM4A Annulment or lapse of patent due to non-payment of fees