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TW200643622A - Antireflective hardmask composition and methods for using same - Google Patents

Antireflective hardmask composition and methods for using same

Info

Publication number
TW200643622A
TW200643622A TW095109575A TW95109575A TW200643622A TW 200643622 A TW200643622 A TW 200643622A TW 095109575 A TW095109575 A TW 095109575A TW 95109575 A TW95109575 A TW 95109575A TW 200643622 A TW200643622 A TW 200643622A
Authority
TW
Taiwan
Prior art keywords
methods
same
formula
hardmask composition
antireflective
Prior art date
Application number
TW095109575A
Other languages
Chinese (zh)
Other versions
TWI328143B (en
Inventor
Dong-Seon Uh
Chang-Ii Oh
Do-Hyeon Kim
Jin-Kuk Lee
Irina Nam
Original Assignee
Cheil Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cheil Ind Inc filed Critical Cheil Ind Inc
Publication of TW200643622A publication Critical patent/TW200643622A/en
Application granted granted Critical
Publication of TWI328143B publication Critical patent/TWI328143B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Silicon Polymers (AREA)

Abstract

Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. In some embodiments of the present invention, antireflective hardmask compositions include: (a) a polymer component, which includes one or more of the monomeric units of Formulas I, II and III: Formula (I), Formula (II), Formula (III), (b) a crosslinking component; and (c) an acid catalyst.
TW095109575A 2005-05-09 2006-03-21 Antireflective hardmask composition and methods for using same TWI328143B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20050038406 2005-05-09
KR1020050068348A KR100671115B1 (en) 2005-05-09 2005-07-27 Hard mask composition having antireflection

Publications (2)

Publication Number Publication Date
TW200643622A true TW200643622A (en) 2006-12-16
TWI328143B TWI328143B (en) 2010-08-01

Family

ID=37653206

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095109575A TWI328143B (en) 2005-05-09 2006-03-21 Antireflective hardmask composition and methods for using same

Country Status (2)

Country Link
KR (1) KR100671115B1 (en)
TW (1) TWI328143B (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100826104B1 (en) * 2006-12-29 2008-04-29 제일모직주식회사 Manufacturing method of patterned material shape using highly etch resistant anti-reflective hard mask composition
KR100896451B1 (en) * 2006-12-30 2009-05-14 제일모직주식회사 Highly etch resistant anti-reflective hard mask composition with improved carbon content, method of manufacturing patterned material shape using same
KR100819162B1 (en) * 2007-04-24 2008-04-03 제일모직주식회사 Hard mask composition having anti-reflection property and patterning method of material using same
KR100908601B1 (en) * 2007-06-05 2009-07-21 제일모직주식회사 Anti-reflective hard mask composition and patterning method of substrate material using same
KR100930673B1 (en) * 2007-12-24 2009-12-09 제일모직주식회사 Method for patterning materials using antireflective hard mask compositions
KR100938445B1 (en) * 2007-12-26 2010-01-25 제일모직주식회사 Gap-fill composition and wiring formation method of semiconductor device using same
KR100844019B1 (en) * 2008-05-30 2008-07-04 제일모직주식회사 Highly etch resistant anti-reflective hard mask composition with improved carbon content, method of manufacturing patterned material shape using same
KR101174086B1 (en) 2008-12-31 2012-08-14 제일모직주식회사 Polymer, polymer composition, under-layer composition of resist, and patterning method of materials using the same
KR101212676B1 (en) 2008-12-31 2012-12-14 제일모직주식회사 Polymer, polymer composition, under-layer composition of resist, and patterning method of materials using the same
KR101344794B1 (en) 2009-12-31 2014-01-16 제일모직주식회사 Aromatic ring-containing polymer for resist　underlayer　and　resist underlayer composition　including　same
KR101400183B1 (en) * 2010-07-06 2014-05-30 제일모직 주식회사 Aromatic ring-containing compound for resist underlayer, resist underlayer composition including same, and method of patterning device using same
KR101344792B1 (en) 2010-12-17 2013-12-24 제일모직주식회사 Hardmask composition and method of forming patterns and semiconductor integrated circuit device including the patterns
KR101423171B1 (en) 2010-12-30 2014-07-25 제일모직 주식회사 Hardmask composition and method of forming patterns and semiconductor integrated circuit device including the patterns
KR101747229B1 (en) 2014-07-15 2017-06-14 삼성에스디아이 주식회사 Hardmask composition and method of forming patterns using the hardmask composition
KR101718102B1 (en) * 2014-12-12 2017-04-04 최상준 New polymers of bottom anti-reflective coating, and composition using same
KR102244470B1 (en) 2018-07-18 2021-04-23 삼성에스디아이 주식회사 Polymer, organic layer composition and method of forming patterns
KR102350590B1 (en) * 2021-05-17 2022-01-12 영창케미칼 주식회사 Spin on carbon hardmask compositions with low evaporation loss and patterning method by using the same
KR102757070B1 (en) * 2022-12-27 2025-01-24 주식회사 휴인터내셔널 A composition of anti-reflective hardmask

Also Published As

Publication number Publication date
KR100671115B1 (en) 2007-01-17
KR20060116133A (en) 2006-11-14
TWI328143B (en) 2010-08-01

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