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TW200639936A - Chemical mechanical polishing process and method for improving accuracy of detecting polishing end-point for chemical mechanical polishing process - Google Patents

Chemical mechanical polishing process and method for improving accuracy of detecting polishing end-point for chemical mechanical polishing process

Info

Publication number
TW200639936A
TW200639936A TW094114856A TW94114856A TW200639936A TW 200639936 A TW200639936 A TW 200639936A TW 094114856 A TW094114856 A TW 094114856A TW 94114856 A TW94114856 A TW 94114856A TW 200639936 A TW200639936 A TW 200639936A
Authority
TW
Taiwan
Prior art keywords
polishing process
chemical mechanical
mechanical polishing
layer
point
Prior art date
Application number
TW094114856A
Other languages
Chinese (zh)
Other versions
TWI270135B (en
Inventor
Chun-Fu Chen
Chi-Tung Huang
Yung-Tai Hung
Chun-Chung Huang
Original Assignee
Macronix Int Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix Int Co Ltd filed Critical Macronix Int Co Ltd
Priority to TW94114856A priority Critical patent/TWI270135B/en
Publication of TW200639936A publication Critical patent/TW200639936A/en
Application granted granted Critical
Publication of TWI270135B publication Critical patent/TWI270135B/en

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A method for improving the accuracy of detection polishing end-point for chemical mechanical polishing process, this method is performed before chemical mechanical polishing process. First, a test wafer with a layer would be polished and a material layer below the layer is provided. Then, a test beam with a wavelength is provided to irradiate the test wafer. Chemical mechanical polishing process is performed on the test wafer to remove the layer till the material layer is exposed, meanwhile, the reflection intensity of the test beam during the polishing process is continually detected. After that, the tendency of the reflection intensity is measured during this period of time that the layer is being removed and getting close to the interface of the layer and the material layer. If the reflection intensity is decreasing, the beam with this wavelength is chosen for later polishing process.
TW94114856A 2005-05-09 2005-05-09 Chemical mechanical polishing process and method for improving accuracy of detecting polishing end-point for chemical mechanical polishing process TWI270135B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94114856A TWI270135B (en) 2005-05-09 2005-05-09 Chemical mechanical polishing process and method for improving accuracy of detecting polishing end-point for chemical mechanical polishing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94114856A TWI270135B (en) 2005-05-09 2005-05-09 Chemical mechanical polishing process and method for improving accuracy of detecting polishing end-point for chemical mechanical polishing process

Publications (2)

Publication Number Publication Date
TW200639936A true TW200639936A (en) 2006-11-16
TWI270135B TWI270135B (en) 2007-01-01

Family

ID=38318564

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94114856A TWI270135B (en) 2005-05-09 2005-05-09 Chemical mechanical polishing process and method for improving accuracy of detecting polishing end-point for chemical mechanical polishing process

Country Status (1)

Country Link
TW (1) TWI270135B (en)

Also Published As

Publication number Publication date
TWI270135B (en) 2007-01-01

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Legal Events

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