[go: up one dir, main page]

TW200638519A - Capacitor material for use in circuitized substrates, circuitized substrate utilizing same, method of making said circuitized substrate, and information handling system utilizing said circuitized substrate - Google Patents

Capacitor material for use in circuitized substrates, circuitized substrate utilizing same, method of making said circuitized substrate, and information handling system utilizing said circuitized substrate

Info

Publication number
TW200638519A
TW200638519A TW094147056A TW94147056A TW200638519A TW 200638519 A TW200638519 A TW 200638519A TW 094147056 A TW094147056 A TW 094147056A TW 94147056 A TW94147056 A TW 94147056A TW 200638519 A TW200638519 A TW 200638519A
Authority
TW
Taiwan
Prior art keywords
circuitized
circuitized substrate
substrate
making
handling system
Prior art date
Application number
TW094147056A
Other languages
Chinese (zh)
Inventor
Rabindra N Das
John M Lauffer
Kostas I Papathomas
Mark D Poliks
Original Assignee
Endicott Interconnect Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Endicott Interconnect Tech Inc filed Critical Endicott Interconnect Tech Inc
Publication of TW200638519A publication Critical patent/TW200638519A/en

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/16Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/162Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16235Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01012Magnesium [Mg]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0102Calcium [Ca]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01087Francium [Fr]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0183Dielectric layers
    • H05K2201/0187Dielectric layers with regions of different dielectrics in the same layer, e.g. in a printed capacitor for locally changing the dielectric properties
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0206Materials
    • H05K2201/0209Inorganic, non-metallic particles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0242Shape of an individual particle
    • H05K2201/0257Nanoparticles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/095Conductive through-holes or vias
    • H05K2201/09509Blind vias, i.e. vias having one side closed
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/09654Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/09718Clearance holes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0023Etching of the substrate by chemical or physical means by exposure and development of a photosensitive insulating layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Inorganic Insulating Materials (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

A material for used as part of an internal capacitor within a circuitized substrate includes a polymer (e.g., a cycloaliphatic epoxy or phenoxy based) resin and a quantity of nano-powders of ferroelectric ceramic material (e.g., barium titanate) having a particle size substantially in the range of from about 0.01 microns to about 0.90 microns and a surface area for selected ones of said particles within the range of from about 2.0 to about 20 square meters per gram. A circuitized substrate adapted fro using such a material and capacitor therein and a method of making such a substrate are also provided. An electrical assembly (substrate and at least one electrical component) and an information handling system (e.g., personal computer) are also provided.
TW094147056A 2005-01-10 2005-12-28 Capacitor material for use in circuitized substrates, circuitized substrate utilizing same, method of making said circuitized substrate, and information handling system utilizing said circuitized substrate TW200638519A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/031,085 US7541265B2 (en) 2005-01-10 2005-01-10 Capacitor material for use in circuitized substrates, circuitized substrate utilizing same, method of making said circuitized substrate, and information handling system utilizing said circuitized substrate

Publications (1)

Publication Number Publication Date
TW200638519A true TW200638519A (en) 2006-11-01

Family

ID=36652454

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094147056A TW200638519A (en) 2005-01-10 2005-12-28 Capacitor material for use in circuitized substrates, circuitized substrate utilizing same, method of making said circuitized substrate, and information handling system utilizing said circuitized substrate

Country Status (4)

Country Link
US (1) US7541265B2 (en)
JP (1) JP2006210911A (en)
CN (1) CN1822358B (en)
TW (1) TW200638519A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102737834A (en) * 2011-04-11 2012-10-17 佳邦科技股份有限公司 Conductive structure with embedded electrodes, solid capacitor and manufacturing method thereof
TWI447763B (en) * 2011-03-16 2014-08-01 Inpaq Technology Co Ltd Conductive structure having an embedded electrode, solid capacitor having an embedded electrode and method of making the same
TWI622109B (en) * 2016-07-07 2018-04-21 欣興電子股份有限公司 Package substrate and method of fabricating the same

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8607445B1 (en) 2005-01-10 2013-12-17 Endicott Interconnect Technologies, Inc. Substrate having internal capacitor and method of making same
US8501575B2 (en) 2005-01-10 2013-08-06 Endicott Interconnect Technologies, Inc. Method of forming multilayer capacitors in a printed circuit substrate
US7449381B2 (en) * 2005-07-05 2008-11-11 Endicott Interconect Technologies, Inc. Method of making a capacitive substrate for use as part of a larger circuitized substrate, method of making said circuitized substrate and method of making an information handling system including said circuitized substrate
JP5050315B2 (en) * 2005-03-04 2012-10-17 日立化成工業株式会社 Gate insulating film and thin film transistor using the same
US20060289976A1 (en) * 2005-06-23 2006-12-28 Intel Corporation Pre-patterned thin film capacitor and method for embedding same in a package substrate
US8929086B2 (en) * 2005-09-26 2015-01-06 International Business Machines Corporation Gel package structural enhancement of compression system board connections
US7930820B2 (en) * 2005-09-26 2011-04-26 International Business Machines Corporation Method for structural enhancement of compression system board connections
KR100691370B1 (en) * 2005-10-12 2007-03-12 삼성전기주식회사 Manufacturing Method of Thin Film Capacitor and Printed Circuit Board with Thin Film Capacitor
JP4934325B2 (en) * 2006-02-17 2012-05-16 株式会社フジクラ Printed wiring board connection structure and printed wiring board connection method
JP4503583B2 (en) * 2006-12-15 2010-07-14 日本メクトロン株式会社 Adhesive sheet for capacitor and method for manufacturing printed wiring board with built-in capacitor using the same
CN101682989B (en) * 2007-03-10 2016-10-26 新美亚通讯设备有限公司 For the method manufacturing capacitive stack and electronic interconnection platform
TWI338357B (en) * 2008-07-17 2011-03-01 Unimicron Technology Corp Chip package carrier and manufacturing method thereof
US7791897B2 (en) * 2008-09-09 2010-09-07 Endicott Interconnect Technologies, Inc. Multi-layer embedded capacitance and resistance substrate core
WO2011089936A1 (en) * 2010-01-22 2011-07-28 日本電気株式会社 Substrate with built-in functional element, and wiring substrate
US8446707B1 (en) 2011-10-10 2013-05-21 Endicott Interconnect Technologies, Inc. Circuitized substrate with low loss capacitive material and method of making same
US9035194B2 (en) * 2012-10-30 2015-05-19 Intel Corporation Circuit board with integrated passive devices
US20140167900A1 (en) 2012-12-14 2014-06-19 Gregorio R. Murtagian Surface-mount inductor structures for forming one or more inductors with substrate traces
US9123735B2 (en) 2013-07-31 2015-09-01 Infineon Technologies Austria Ag Semiconductor device with combined passive device on chip back side
US9177831B2 (en) * 2013-09-30 2015-11-03 Intel Corporation Die assembly on thin dielectric sheet
KR20190058695A (en) * 2014-02-21 2019-05-29 미쓰이금속광업주식회사 Copper-clad laminate for forming integrated capacitor layer, multilayer printed wiring board, and production method for multilayer printed wiring board
US9832865B2 (en) * 2016-04-26 2017-11-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Methods and devices for providing increased routing flexibility in multi-layer printed circuit boards
JP6380726B1 (en) * 2016-12-21 2018-08-29 大日本印刷株式会社 Penetration electrode substrate, semiconductor device, and method of manufacturing penetration electrode substrate
US10317558B2 (en) * 2017-03-14 2019-06-11 Saudi Arabian Oil Company EMU impulse antenna
US10416335B2 (en) 2017-03-14 2019-09-17 Saudi Arabian Oil Company EMU impulse antenna with controlled directionality and improved impedance matching
US10330815B2 (en) 2017-03-14 2019-06-25 Saudi Arabian Oil Company EMU impulse antenna for low frequency radio waves using giant dielectric and ferrite materials
US10365393B2 (en) 2017-11-07 2019-07-30 Saudi Arabian Oil Company Giant dielectric nanoparticles as high contrast agents for electromagnetic (EM) fluids imaging in an oil reservoir
US11640934B2 (en) * 2018-03-30 2023-05-02 Intel Corporation Lithographically defined vertical interconnect access (VIA) in dielectric pockets in a package substrate
CN110843370B (en) * 2018-07-30 2021-08-17 卡西欧计算机株式会社 Computer-readable recording medium and method for forming conductive circuit pattern
JP7455516B2 (en) * 2019-03-29 2024-03-26 Tdk株式会社 Substrate with built-in element and its manufacturing method
WO2021084981A1 (en) * 2019-10-29 2021-05-06 パナソニックIpマネジメント株式会社 Paste composition, dielectric composition, capacitor, and method for manufacturing dielectric composition
US11715688B2 (en) * 2020-05-26 2023-08-01 Qualcomm Incorporated Variable dielectric constant materials in same layer of a package
CN114702785B (en) * 2022-03-22 2023-12-19 深圳市纽菲斯新材料科技有限公司 Low-dielectric resin composition, copper foil, and preparation method and application thereof

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5016085A (en) 1988-03-04 1991-05-14 Hughes Aircraft Company Hermetic package for integrated circuit chips
US5026624A (en) 1989-03-03 1991-06-25 International Business Machines Corporation Composition for photo imaging
US5300402A (en) 1988-12-30 1994-04-05 International Business Machines Corporation Composition for photo imaging
US5079069A (en) 1989-08-23 1992-01-07 Zycon Corporation Capacitor laminate for use in capacitive printed circuit boards and methods of manufacture
JPH03283459A (en) * 1990-03-30 1991-12-13 Hitachi Ltd Semiconductor integrated circuit device
US5099309A (en) 1990-04-30 1992-03-24 International Business Machines Corporation Three-dimensional memory card structure with internal direct chip attachment
US5227338A (en) 1990-04-30 1993-07-13 International Business Machines Corporation Three-dimensional memory card structure with internal direct chip attachment
US5162977A (en) * 1991-08-27 1992-11-10 Storage Technology Corporation Printed circuit board having an integrated decoupling capacitive element
US5426263A (en) 1993-12-23 1995-06-20 Motorola, Inc. Electronic assembly having a double-sided leadless component
JP2701802B2 (en) 1995-07-17 1998-01-21 日本電気株式会社 Printed circuit board for bare chip mounting
US5801108A (en) * 1996-09-11 1998-09-01 Motorola Inc. Low temperature cofireable dielectric paste
DE69832444T2 (en) 1997-09-11 2006-08-03 E.I. Dupont De Nemours And Co., Wilmington Flexible polyimide film with high dielectric constant
US6068782A (en) 1998-02-11 2000-05-30 Ormet Corporation Individual embedded capacitors for laminated printed circuit boards
US6207595B1 (en) 1998-03-02 2001-03-27 International Business Machines Corporation Laminate and method of manufacture thereof
US6616794B2 (en) * 1998-05-04 2003-09-09 Tpl, Inc. Integral capacitance for printed circuit board using dielectric nanopowders
US6084306A (en) 1998-05-29 2000-07-04 Texas Instruments Incorporated Bridging method of interconnects for integrated circuit packages
US6288905B1 (en) * 1999-04-15 2001-09-11 Amerasia International Technology Inc. Contact module, as for a smart card, and method for making same
US6242282B1 (en) 1999-10-04 2001-06-05 General Electric Company Circuit chip package and fabrication method
US6446317B1 (en) 2000-03-31 2002-09-10 Intel Corporation Hybrid capacitor and method of fabrication therefor
US6395996B1 (en) 2000-05-16 2002-05-28 Silicon Integrated Systems Corporation Multi-layered substrate with a built-in capacitor design
AU2001274857A1 (en) * 2000-05-18 2001-12-03 Georgia Tech Research Corporation High dielectric constant nano-structure polymer-ceramic composite
US6480395B1 (en) 2000-05-25 2002-11-12 Hewlett-Packard Company Device and method for interstitial components in a printed circuit board
US6370012B1 (en) 2000-08-30 2002-04-09 International Business Machines Corporation Capacitor laminate for use in printed circuit board and as an interconnector
US6699780B1 (en) * 2000-10-13 2004-03-02 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using plasma undercut etching
US6426250B1 (en) * 2001-05-24 2002-07-30 Taiwan Semiconductor Manufacturing Company High density stacked MIM capacitor structure
US6577492B2 (en) 2001-07-10 2003-06-10 3M Innovative Properties Company Capacitor having epoxy dielectric layer cured with aminophenylfluorenes
US6847527B2 (en) * 2001-08-24 2005-01-25 3M Innovative Properties Company Interconnect module with reduced power distribution impedance
TWI226101B (en) * 2003-06-19 2005-01-01 Advanced Semiconductor Eng Build-up manufacturing process of IC substrate with embedded parallel capacitor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI447763B (en) * 2011-03-16 2014-08-01 Inpaq Technology Co Ltd Conductive structure having an embedded electrode, solid capacitor having an embedded electrode and method of making the same
CN102737834A (en) * 2011-04-11 2012-10-17 佳邦科技股份有限公司 Conductive structure with embedded electrodes, solid capacitor and manufacturing method thereof
CN102737834B (en) * 2011-04-11 2015-06-24 佳邦科技股份有限公司 Conductive structure with embedded electrodes, solid capacitor and manufacturing method thereof
TWI622109B (en) * 2016-07-07 2018-04-21 欣興電子股份有限公司 Package substrate and method of fabricating the same

Also Published As

Publication number Publication date
US20060151863A1 (en) 2006-07-13
US7541265B2 (en) 2009-06-02
CN1822358B (en) 2012-07-04
JP2006210911A (en) 2006-08-10
CN1822358A (en) 2006-08-23

Similar Documents

Publication Publication Date Title
TW200638519A (en) Capacitor material for use in circuitized substrates, circuitized substrate utilizing same, method of making said circuitized substrate, and information handling system utilizing said circuitized substrate
CN204808363U (en) Fingerprint sensor module, has this portable electronic equipment
WO1996016796B1 (en) Electrical contact having a particulate surface
EP2423740A3 (en) Image display panel and image display device
CN105579533B (en) Submicron silver particle ink compositions, methods and uses
EP1710818A3 (en) Electronic device, dielectric ceramic composition and the production method
CN205486174U (en) Fingerprint sensor module
ATE502979T1 (en) RESIN COMPOSITION AND INTEGRATED HYBRID CIRCUIT BOARD THEREOF
EP1231637A3 (en) High dielectric constant composite material and multilayer wiring board using the same
KR20120105431A (en) Method for the self-assembly of electrical, electronic or micromechanical components on a substrate
US8935848B1 (en) Method for providing near-hermetically coated integrated circuit assemblies
WO2007119200A3 (en) An electro-optic device and a method for producing the same
ATE53857T1 (en) EPOXY ADHESIVE FROM SPHERICAL PARTICLES AND PROCESS FOR ITS PRODUCTION.
CN102598895A (en) Dielectric material with non-halogenated curing agent
EP2048109A3 (en) Electronic device, electronic module, and methods for manufacturing the same
TW200632597A (en) Electrophotographic printing of electronic devices
CN206947341U (en) Portable electronic device and image acquisition module and bearing assembly thereof
EP1826710A4 (en) Noncontact data receiver/transmitter
Paranjape et al. Multistage SrBaTiO3/PDMS Composite Film‐Based Hybrid Nanogenerator for Efficient Floor Energy Harvesting Applications
ATE408250T1 (en) ANISOTROPIC CONDUCTIVE FILM AND METHOD FOR THE PRODUCTION THEREOF
Wu et al. Composition‐dependent underwater adhesion of catechol‐bearing hydrogels
EP1450590A3 (en) Circuitized substrate and method of making same
MXPA05008790A (en) Compositions comprising a polysaccharide component and one or more coating layers.
TW200718320A (en) Circuit board structure and dielectric structure thereof
JP2006196278A (en) Composite particle dispersion and its manufacturing method