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TW200635363A - Circuit device capable of increasing dynamic range of CMOS image sensor and method thereof - Google Patents

Circuit device capable of increasing dynamic range of CMOS image sensor and method thereof

Info

Publication number
TW200635363A
TW200635363A TW094109760A TW94109760A TW200635363A TW 200635363 A TW200635363 A TW 200635363A TW 094109760 A TW094109760 A TW 094109760A TW 94109760 A TW94109760 A TW 94109760A TW 200635363 A TW200635363 A TW 200635363A
Authority
TW
Taiwan
Prior art keywords
dynamic range
pixel circuit
image sensor
cmos image
device capable
Prior art date
Application number
TW094109760A
Other languages
Chinese (zh)
Other versions
TWI260919B (en
Inventor
Oscal T C Chen
Wei-Jean Liu
Hsiu-Fen Yeh
Original Assignee
Nat Univ Chung Cheng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Univ Chung Cheng filed Critical Nat Univ Chung Cheng
Priority to TW94109760A priority Critical patent/TWI260919B/en
Application granted granted Critical
Publication of TWI260919B publication Critical patent/TWI260919B/en
Publication of TW200635363A publication Critical patent/TW200635363A/en

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

The present invention provides a circuit device capable of increasing the dynamic range of a CMOS image sensor and a method thereof. According to the invention, a photo-sensitive pixel circuit is used to output an output signal, in which the photo-sensitive pixel circuit includes a photoelectric diode and a plurality of transistors. A current source is used as a charge replenishment unit to provide electric current replenishment. The electric current is inputted at one end of the photoelectric diode to supply replenished charge to the parasitic capacitance of the photoelectric diode. This can delay the saturation of the photosensitive pixel circuit, thereby increasing the dynamic range of a sensor. Other than this, a feedback circuit can be used and connected to the photosensitive pixel circuit. The feedback circuit receives the output signals of the photosensitive pixel circuit and sends out a control signal based on the output signals in order to control the status of the charge replenishment unit and increase the dynamic range of the CMOS image sensor.
TW94109760A 2005-03-29 2005-03-29 Circuit device capable of increasing dynamic range of CMOS image sensor and method thereof TWI260919B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94109760A TWI260919B (en) 2005-03-29 2005-03-29 Circuit device capable of increasing dynamic range of CMOS image sensor and method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94109760A TWI260919B (en) 2005-03-29 2005-03-29 Circuit device capable of increasing dynamic range of CMOS image sensor and method thereof

Publications (2)

Publication Number Publication Date
TWI260919B TWI260919B (en) 2006-08-21
TW200635363A true TW200635363A (en) 2006-10-01

Family

ID=37874898

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94109760A TWI260919B (en) 2005-03-29 2005-03-29 Circuit device capable of increasing dynamic range of CMOS image sensor and method thereof

Country Status (1)

Country Link
TW (1) TWI260919B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI392375B (en) * 2007-10-26 2013-04-01 Omnivision Tech Inc Method for achieving high dynamic range in image sensor and image sensing system

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456990B (en) * 2011-04-08 2014-10-11 Pixart Imaging Inc High dynamic range image sensing circuit and high dynamic range image reading method
CN111740400B (en) * 2020-06-22 2023-02-14 广东九联科技股份有限公司 Circuit and method for reducing influence of ESD device on high-speed signal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI392375B (en) * 2007-10-26 2013-04-01 Omnivision Tech Inc Method for achieving high dynamic range in image sensor and image sensing system

Also Published As

Publication number Publication date
TWI260919B (en) 2006-08-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees