TW200635025A - ESD protection circuit with low parasitic capacitance - Google Patents
ESD protection circuit with low parasitic capacitanceInfo
- Publication number
- TW200635025A TW200635025A TW095100884A TW95100884A TW200635025A TW 200635025 A TW200635025 A TW 200635025A TW 095100884 A TW095100884 A TW 095100884A TW 95100884 A TW95100884 A TW 95100884A TW 200635025 A TW200635025 A TW 200635025A
- Authority
- TW
- Taiwan
- Prior art keywords
- controlled rectifier
- silicon controlled
- pad
- protection circuit
- esd protection
- Prior art date
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
An ESD protection circuit includes a silicon controlled rectifier coupled between a circuit pad and ground for bypassing an ESD current from the circuit pad during an ESD event. An MOS transistor, having a source shared with the silicon controlled rectifier, is coupled between the pad and ground for reducing a trigger voltage of the silicon controlled rectifier during the ESD event. The silicon controlled rectifier has a first diode serially connected to a second diode in an opposite direction, between the pad and the shared source of the MOS transistor, for functioning as a bipolar transistor. In a layout view, a first area for placement of the first and second diodes is interposed between at least two separate sets of second area for placement of the MOS transistor.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/091,131 US20050254189A1 (en) | 2004-05-07 | 2005-03-28 | ESD protection circuit with low parasitic capacitance |
| US11/134,539 US7518843B2 (en) | 2005-03-28 | 2005-05-19 | ESD protection circuit with low parasitic capacitance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200635025A true TW200635025A (en) | 2006-10-01 |
| TWI286378B TWI286378B (en) | 2007-09-01 |
Family
ID=39458672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW95100884A TWI286378B (en) | 2005-03-28 | 2006-01-10 | ESD protection circuit with low parasitic capacitance |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI286378B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8253165B2 (en) | 2008-11-04 | 2012-08-28 | Macronix International Co., Ltd. | Structures for lowering trigger voltage in an electrostatic discharge protection device |
| TWI620301B (en) * | 2014-02-28 | 2018-04-01 | Infineon Technologies Ag | Integrated circuit with ESD protection structure and photon source |
-
2006
- 2006-01-10 TW TW95100884A patent/TWI286378B/en active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8253165B2 (en) | 2008-11-04 | 2012-08-28 | Macronix International Co., Ltd. | Structures for lowering trigger voltage in an electrostatic discharge protection device |
| TWI620301B (en) * | 2014-02-28 | 2018-04-01 | Infineon Technologies Ag | Integrated circuit with ESD protection structure and photon source |
| US9953968B2 (en) | 2014-02-28 | 2018-04-24 | Infineon Technologies Ag | Integrated circuit having an ESD protection structure and photon source |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI286378B (en) | 2007-09-01 |
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