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TW200625696A - Light-emitting device and method for fabricating same - Google Patents

Light-emitting device and method for fabricating same

Info

Publication number
TW200625696A
TW200625696A TW094138477A TW94138477A TW200625696A TW 200625696 A TW200625696 A TW 200625696A TW 094138477 A TW094138477 A TW 094138477A TW 94138477 A TW94138477 A TW 94138477A TW 200625696 A TW200625696 A TW 200625696A
Authority
TW
Taiwan
Prior art keywords
light
emitting device
fabricating same
phosphor
emitting
Prior art date
Application number
TW094138477A
Other languages
Chinese (zh)
Other versions
TWI291772B (en
Inventor
Kazuo Uchida
Shinji Nozaki
Hiroshi Morisaki
Yasuo Imamura
Shuichi Kato
Original Assignee
Univ Electro Communications
Denki Kagaku Kogyo Kk
Nanoteco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Electro Communications, Denki Kagaku Kogyo Kk, Nanoteco Corp filed Critical Univ Electro Communications
Publication of TW200625696A publication Critical patent/TW200625696A/en
Application granted granted Critical
Publication of TWI291772B publication Critical patent/TWI291772B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

A light-emitting device performing wavelength conversion using a phosphor in which luminous efficiency is enhanced while reducing the size. The light-emitting device comprises a semiconductor active region emitting a first light, and a transparent conductive layer containing a phosphor which is excited with the first light and emits second light having a wavelength different from that of the first light.
TW094138477A 2004-11-02 2005-11-02 Light-emitting device and method for fabricating same TWI291772B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004319954 2004-11-02

Publications (2)

Publication Number Publication Date
TW200625696A true TW200625696A (en) 2006-07-16
TWI291772B TWI291772B (en) 2007-12-21

Family

ID=36319152

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094138477A TWI291772B (en) 2004-11-02 2005-11-02 Light-emitting device and method for fabricating same

Country Status (3)

Country Link
JP (1) JP4275701B2 (en)
TW (1) TWI291772B (en)
WO (1) WO2006049146A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI404228B (en) * 2007-07-12 2013-08-01 Epistar Corp Semiconductor light emitting device and method of manufacturing same

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005046450A1 (en) * 2005-09-28 2007-04-05 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip, method for its production and optoelectronic component
JP2008066591A (en) * 2006-09-08 2008-03-21 Matsushita Electric Works Ltd Compound semiconductor light emitting device, illumination apparatus employing the same and manufacturing method of compound semiconductor device
DE102018104993A1 (en) * 2018-03-05 2019-09-05 Osram Opto Semiconductors Gmbh CONSTRUCTION ELEMENT WITH ELECTRICALLY CONDUCTIVE CONVERTER LAYER

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04239585A (en) * 1991-01-22 1992-08-27 Matsushita Electron Corp Gas-discharge display device
JPH1187778A (en) * 1997-09-02 1999-03-30 Toshiba Corp Semiconductor light emitting element, semiconductor light emitting device and manufacture thereof
JP2001217456A (en) * 2000-02-03 2001-08-10 Sharp Corp Gallium nitride based compound semiconductor light emitting device
DE10147040A1 (en) * 2001-09-25 2003-04-24 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lighting unit with at least one LED as a light source

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI404228B (en) * 2007-07-12 2013-08-01 Epistar Corp Semiconductor light emitting device and method of manufacturing same

Also Published As

Publication number Publication date
WO2006049146A1 (en) 2006-05-11
JP4275701B2 (en) 2009-06-10
JPWO2006049146A1 (en) 2008-05-29
TWI291772B (en) 2007-12-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees