TW200618071A - Silicon substrate III family nitrogen based semiconductor material and growth method thereof - Google Patents
Silicon substrate III family nitrogen based semiconductor material and growth method thereofInfo
- Publication number
- TW200618071A TW200618071A TW093135035A TW93135035A TW200618071A TW 200618071 A TW200618071 A TW 200618071A TW 093135035 A TW093135035 A TW 093135035A TW 93135035 A TW93135035 A TW 93135035A TW 200618071 A TW200618071 A TW 200618071A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- silicon substrate
- semiconductor material
- iii family
- nitrogen based
- Prior art date
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 title abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052710 silicon Inorganic materials 0.000 title abstract 4
- 239000010703 silicon Substances 0.000 title abstract 4
- 239000000463 material Substances 0.000 title abstract 3
- 229910052757 nitrogen Inorganic materials 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000010410 layer Substances 0.000 abstract 10
- 230000007704 transition Effects 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 2
- 239000002131 composite material Substances 0.000 abstract 2
- 229910052726 zirconium Inorganic materials 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
Landscapes
- Led Devices (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Disclosed is a silicon substrate III family nitrogen based semiconductor material and a growth method thereof, which is grown on a surface of an intermediate transition layer. The transition layer has the following structure: a layer of a zirconium boride film or a strain relief film or a combination of both; a layer of A10.26Ga0.74N that matches crystal lattice of zirconium boride, and a single layer or plural layers of AlxGa1-xN (0 ≤ x ≤ 1) based buffer that are attached to the silicon substrate. The intermediate transition layer can be grown on a portion or whole surface of the silicon substrate and functions to prevent occurrence of crystal defect and suppress propagation of crystal dislocation when the matching of lattice between an extended layer and the substrate is incorrect. As such, at least one layer or plural layers of high quality III family nitrogen based composite semiconductor material are grown on the intermediate composite transition layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93135035A TWI277141B (en) | 2004-11-16 | 2004-11-16 | Silicon substrate III family nitrogen based semiconductor material and growth method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93135035A TWI277141B (en) | 2004-11-16 | 2004-11-16 | Silicon substrate III family nitrogen based semiconductor material and growth method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200618071A true TW200618071A (en) | 2006-06-01 |
| TWI277141B TWI277141B (en) | 2007-03-21 |
Family
ID=38646434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW93135035A TWI277141B (en) | 2004-11-16 | 2004-11-16 | Silicon substrate III family nitrogen based semiconductor material and growth method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI277141B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI381557B (en) * | 2008-08-29 | 2013-01-01 | Taiwan Semiconductor Mfg | Light-emitting diode device and method of manufacturing same |
-
2004
- 2004-11-16 TW TW93135035A patent/TWI277141B/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI381557B (en) * | 2008-08-29 | 2013-01-01 | Taiwan Semiconductor Mfg | Light-emitting diode device and method of manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI277141B (en) | 2007-03-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |