TW200616093A - Bipolar transistor with graded base layer - Google Patents
Bipolar transistor with graded base layerInfo
- Publication number
- TW200616093A TW200616093A TW094136479A TW94136479A TW200616093A TW 200616093 A TW200616093 A TW 200616093A TW 094136479 A TW094136479 A TW 094136479A TW 94136479 A TW94136479 A TW 94136479A TW 200616093 A TW200616093 A TW 200616093A
- Authority
- TW
- Taiwan
- Prior art keywords
- base layer
- iii
- indium
- nitrogen
- flow rates
- Prior art date
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 239000000654 additive Substances 0.000 abstract 2
- 230000000996 additive effect Effects 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 230000001276 controlling effect Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Bipolar Transistors (AREA)
Abstract
A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be the base layer of gallium arsenide-based heterojunction bipolar transistors and can be lattice-matched to gallium arsenide emitter and/or collector layers by controlling concentrations of indium and nitrogen in the base layer. The base layer can have a graded band gap that is formed by changing the flow rates during deposition of Ⅲ and Ⅴ additive elements employed to reduce band gap relative to different Ⅲ-Ⅴ elements that represent the bulk of the layer. The flow rates of the Ⅲ and Ⅴ additive elements maintain an essentially constant doping-mobility product value during deposition and can be regulated to obtain pre-selected base-emitter voltages at junctions within a resulting transistor.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/969,804 US7345327B2 (en) | 2000-11-27 | 2004-10-20 | Bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200616093A true TW200616093A (en) | 2006-05-16 |
Family
ID=57808027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094136479A TW200616093A (en) | 2004-10-20 | 2005-10-19 | Bipolar transistor with graded base layer |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200616093A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI678883B (en) * | 2012-06-14 | 2019-12-01 | 美商西凱渥資訊處理科技公司 | Power amplifier modules |
| US11984423B2 (en) | 2011-09-02 | 2024-05-14 | Skyworks Solutions, Inc. | Radio frequency transmission line with finish plating on conductive layer |
-
2005
- 2005-10-19 TW TW094136479A patent/TW200616093A/en unknown
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11984423B2 (en) | 2011-09-02 | 2024-05-14 | Skyworks Solutions, Inc. | Radio frequency transmission line with finish plating on conductive layer |
| TWI678883B (en) * | 2012-06-14 | 2019-12-01 | 美商西凱渥資訊處理科技公司 | Power amplifier modules |
| US10771024B2 (en) | 2012-06-14 | 2020-09-08 | Skyworks Solutions, Inc. | Power amplifier modules including transistor with grading and semiconductor resistor |
| US11451199B2 (en) | 2012-06-14 | 2022-09-20 | Skyworks Solutions, Inc. | Power amplifier systems with control interface and bias circuit |
| US12143077B2 (en) | 2012-06-14 | 2024-11-12 | Skyworks Solutions, Inc. | Power amplifier modules including semiconductor resistor and tantalum nitride terminated through wafer via |
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