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TW200614382A - Use of active temperature control to provide emissivity independent wafer temperature - Google Patents

Use of active temperature control to provide emissivity independent wafer temperature

Info

Publication number
TW200614382A
TW200614382A TW094121184A TW94121184A TW200614382A TW 200614382 A TW200614382 A TW 200614382A TW 094121184 A TW094121184 A TW 094121184A TW 94121184 A TW94121184 A TW 94121184A TW 200614382 A TW200614382 A TW 200614382A
Authority
TW
Taiwan
Prior art keywords
wafer
edge
support
edge support
roll
Prior art date
Application number
TW094121184A
Other languages
Chinese (zh)
Other versions
TWI366234B (en
Inventor
Jack Hwang
Robert James
Eric J Lambert
Jonathan Leonard
Richard Brindos
Karson L Knutson
Mark Armstrong
Justin Sandford
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/882,894 external-priority patent/US20060004493A1/en
Priority claimed from US11/156,381 external-priority patent/US20060286807A1/en
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW200614382A publication Critical patent/TW200614382A/en
Application granted granted Critical
Publication of TWI366234B publication Critical patent/TWI366234B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Embodiments relate to a substrate or wafer edge support having an emmisivity greater than that of a silicon wafer, where the edge support is for supporting a wafer during processing to form circuit devices on or in the wafer. Embodiments also include temperature sensors, heat conducting gas jets, and photonic energy can be directed to sense and control the temperature of the edge support and/or wafer edge during annealing to reduce temperature roll-off or roll-up at the edge as compared to the center of the wafer. Specifically, use of an edge support having an emmisivity greater than or equal to that of the wafer during processing allows helium gas jets directed at the edge support and/or wafer edge to reduce temperature roll-up at the edge during annealing. Because wafers from different processes and anneal locations may all have different emmisivities, use of the feedback loop will enable one edge ring to support the uniform anneal of wafers with a range of different emmisivities.
TW094121184A 2004-06-30 2005-06-24 Method, apparatus and system to control temperature of a wafer edge or wafer edge support during heating, and machine-readable medium having data therein TWI366234B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/882,894 US20060004493A1 (en) 2004-06-30 2004-06-30 Use of active temperature control to provide emmisivity independent wafer temperature
US11/156,381 US20060286807A1 (en) 2005-06-16 2005-06-16 Use of active temperature control to provide emmisivity independent wafer temperature

Publications (2)

Publication Number Publication Date
TW200614382A true TW200614382A (en) 2006-05-01
TWI366234B TWI366234B (en) 2012-06-11

Family

ID=35124365

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094121184A TWI366234B (en) 2004-06-30 2005-06-24 Method, apparatus and system to control temperature of a wafer edge or wafer edge support during heating, and machine-readable medium having data therein

Country Status (4)

Country Link
DE (1) DE112005001387B4 (en)
GB (1) GB2430551B (en)
TW (1) TWI366234B (en)
WO (1) WO2006004783A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7860379B2 (en) 2007-01-15 2010-12-28 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
EP3577314A4 (en) 2017-02-03 2020-11-25 GeoDynamics, Inc. SYSTEM AND PROCEDURE FOR EFFICIENT PROPERTY TRANSPORT
CN115989568A (en) * 2020-09-28 2023-04-18 株式会社国际电气 Temperature control method, method for manufacturing semiconductor device, program, and substrate processing apparatus
CN116988157B (en) * 2023-09-26 2023-12-05 山西第三代半导体技术创新中心有限公司 Silicon carbide seed crystal bonding furnace capable of reducing crystal growth holes

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3348936B2 (en) * 1993-10-21 2002-11-20 東京エレクトロン株式会社 Vertical heat treatment equipment
US5551982A (en) * 1994-03-31 1996-09-03 Applied Materials, Inc. Semiconductor wafer process chamber with susceptor back coating
US6375749B1 (en) * 1999-07-14 2002-04-23 Seh America, Inc. Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth
US6383330B1 (en) * 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
US7037797B1 (en) * 2000-03-17 2006-05-02 Mattson Technology, Inc. Localized heating and cooling of substrates
US20020004897A1 (en) * 2000-07-05 2002-01-10 Min-Cheng Kao Data processing apparatus for executing multiple instruction sets
JP4842429B2 (en) * 2000-10-03 2011-12-21 東京エレクトロン株式会社 Heat treatment apparatus design method and computer-readable recording medium
US6888104B1 (en) * 2004-02-05 2005-05-03 Applied Materials, Inc. Thermally matched support ring for substrate processing chamber

Also Published As

Publication number Publication date
DE112005001387T5 (en) 2009-03-12
WO2006004783A1 (en) 2006-01-12
GB2430551A (en) 2007-03-28
GB2430551B (en) 2009-11-04
GB0620832D0 (en) 2006-12-13
DE112005001387B4 (en) 2013-08-22
TWI366234B (en) 2012-06-11

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees