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TW200610174A - Semiconductor light-emitting device and production method thereof - Google Patents

Semiconductor light-emitting device and production method thereof

Info

Publication number
TW200610174A
TW200610174A TW093126439A TW93126439A TW200610174A TW 200610174 A TW200610174 A TW 200610174A TW 093126439 A TW093126439 A TW 093126439A TW 93126439 A TW93126439 A TW 93126439A TW 200610174 A TW200610174 A TW 200610174A
Authority
TW
Taiwan
Prior art keywords
semiconductor light
production method
stacked layer
emitting device
light
Prior art date
Application number
TW093126439A
Other languages
Chinese (zh)
Other versions
TWI241728B (en
Inventor
Min-Hsun Hsieh
Chia-Fen Tsai
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to TW093126439A priority Critical patent/TWI241728B/en
Priority to US11/160,588 priority patent/US7928455B2/en
Priority to KR1020050069967A priority patent/KR101068649B1/en
Priority to JP2005241441A priority patent/JP2006074036A/en
Priority to DE102005040522.3A priority patent/DE102005040522B4/en
Application granted granted Critical
Publication of TWI241728B publication Critical patent/TWI241728B/en
Publication of TW200610174A publication Critical patent/TW200610174A/en
Priority to US13/045,202 priority patent/US8853722B2/en
Priority to US14/507,445 priority patent/US9627577B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

A semiconductor light-emitting device and production method thereof are disclosed. The semiconductor light-emitting device is composed of a light-impervious substrate, a bonding structure, and a semiconductor light-emitting stacked layer lifting off from a original growth substrate and bonding to the light-impervious substrate via the bonding structure, and a fluorescent material structure forming over the semiconductor light-emitting stacked layer. The production method includes lifting off a semiconductor light-emitting stacked layer from a original growth substrate, bonding the semiconductor light-emitting stacked layer to a light-impervious substrate, and forming a fluorescent material structure over the semiconductor light-emitting stacked layer.
TW093126439A 2002-07-15 2004-09-01 Semiconductor light-emitting device and production method thereof TWI241728B (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
TW093126439A TWI241728B (en) 2004-09-01 2004-09-01 Semiconductor light-emitting device and production method thereof
US11/160,588 US7928455B2 (en) 2002-07-15 2005-06-29 Semiconductor light-emitting device and method for forming the same
KR1020050069967A KR101068649B1 (en) 2004-09-01 2005-07-30 Semiconductor light emitting device and method of forming the same
JP2005241441A JP2006074036A (en) 2004-09-01 2005-08-23 Semiconductor light emitting device and manufacturing method thereof
DE102005040522.3A DE102005040522B4 (en) 2004-09-01 2005-08-26 Light-emitting semiconductor device and method for producing such
US13/045,202 US8853722B2 (en) 2002-07-15 2011-03-10 Semiconductor light-emitting device and method for forming the same
US14/507,445 US9627577B2 (en) 2002-07-15 2014-10-06 Semiconductor light-emitting device and method for forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093126439A TWI241728B (en) 2004-09-01 2004-09-01 Semiconductor light-emitting device and production method thereof

Publications (2)

Publication Number Publication Date
TWI241728B TWI241728B (en) 2005-10-11
TW200610174A true TW200610174A (en) 2006-03-16

Family

ID=35745894

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093126439A TWI241728B (en) 2002-07-15 2004-09-01 Semiconductor light-emitting device and production method thereof

Country Status (4)

Country Link
JP (1) JP2006074036A (en)
KR (1) KR101068649B1 (en)
DE (1) DE102005040522B4 (en)
TW (1) TWI241728B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI470838B (en) * 2012-05-25 2015-01-21 Phostek Inc Method for forming semiconductor light-emitting device

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DE102006026481A1 (en) * 2006-06-07 2007-12-13 Siemens Ag Method for arranging a powder layer on a substrate and layer structure with at least one powder layer on a substrate
KR100757800B1 (en) * 2006-06-30 2007-09-11 서울옵토디바이스주식회사 Light emitting diode for alternating current having an insulating protective film and a method of manufacturing the same
DE102006051746A1 (en) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Optoelectronic component with a luminescence conversion layer
DE102006061175A1 (en) * 2006-12-22 2008-06-26 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component has semiconductor chip and luminescence conversion element with luminescent material, which emits electromagnetic radiations
KR101420214B1 (en) * 2008-01-21 2014-07-17 엘지이노텍 주식회사 The nitride-based light-
JP2010054695A (en) * 2008-08-27 2010-03-11 National Institute Of Advanced Industrial Science & Technology Method of manufacturing optical device
JP2010263050A (en) * 2009-05-01 2010-11-18 Showa Denko Kk LIGHT EMITTING DIODE, MANUFACTURING METHOD THEREOF, AND LIGHT EMITTING DIODE LAMP
WO2010143114A1 (en) * 2009-06-11 2010-12-16 Koninklijke Philips Electronics N.V. Led illumination device
DE102010046966B4 (en) 2010-09-29 2018-05-24 Infineon Technologies Ag Building block and method for the production of a building block
JP2012069977A (en) * 2011-11-08 2012-04-05 Citizen Electronics Co Ltd Light emitting device and method for manufacturing the same

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US5376580A (en) * 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
JPH09260060A (en) * 1996-03-25 1997-10-03 Uchitsugu Minami Electro-luminescence element and manufacture thereof
JP3617587B2 (en) * 1997-07-17 2005-02-09 日亜化学工業株式会社 Light emitting diode and method for forming the same
US6340824B1 (en) 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
JPH1187778A (en) * 1997-09-02 1999-03-30 Toshiba Corp Semiconductor light emitting element, semiconductor light emitting device and manufacture thereof
JP4770058B2 (en) 2000-05-17 2011-09-07 日亜化学工業株式会社 LIGHT EMITTING ELEMENT AND DEVICE
JP2002016284A (en) * 2000-06-29 2002-01-18 Toshiba Corp Method for manufacturing gallium nitride semiconductor light-emitting element
US6650044B1 (en) 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
JP5110744B2 (en) 2000-12-21 2012-12-26 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー Light emitting device and manufacturing method thereof
US6642652B2 (en) 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device
JP3775268B2 (en) * 2001-09-03 2006-05-17 日亜化学工業株式会社 Method for forming light emitting device
JP2003243727A (en) * 2001-12-14 2003-08-29 Nichia Chem Ind Ltd Light emitting apparatus
CA2754097C (en) * 2002-01-28 2013-12-10 Nichia Corporation Nitride semiconductor device having support substrate and its manufacturing method
JP2004031669A (en) * 2002-06-26 2004-01-29 Seiko Epson Corp Semiconductor element member, semiconductor device, manufacturing method thereof, electro-optical device, and electronic equipment
TW544958B (en) * 2002-07-15 2003-08-01 Epistar Corp Light emitting diode with an adhesive layer and its manufacturing method
JP4334845B2 (en) * 2002-10-15 2009-09-30 株式会社リコー Surface emitting laser, surface emitting laser array, optical transmission module, optical transmission / reception module, optical communication system, laser printer, and optical pickup system
JP2004207576A (en) * 2002-12-26 2004-07-22 Toshiba Lighting & Technology Corp Light emitting diode lamp

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI470838B (en) * 2012-05-25 2015-01-21 Phostek Inc Method for forming semiconductor light-emitting device

Also Published As

Publication number Publication date
JP2006074036A (en) 2006-03-16
TWI241728B (en) 2005-10-11
DE102005040522B4 (en) 2022-03-03
DE102005040522A1 (en) 2006-03-02
KR20060048984A (en) 2006-05-18
KR101068649B1 (en) 2011-09-28

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