TW200608472A - Electron-tunneling-type power and cool structure and method for producing the same - Google Patents
Electron-tunneling-type power and cool structure and method for producing the sameInfo
- Publication number
- TW200608472A TW200608472A TW093125948A TW93125948A TW200608472A TW 200608472 A TW200608472 A TW 200608472A TW 093125948 A TW093125948 A TW 093125948A TW 93125948 A TW93125948 A TW 93125948A TW 200608472 A TW200608472 A TW 200608472A
- Authority
- TW
- Taiwan
- Prior art keywords
- metal layer
- tunneling
- electron
- type power
- insulation mats
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 238000009413 insulation Methods 0.000 abstract 5
- 239000002184 metal Substances 0.000 abstract 5
- 229920000642 polymer Polymers 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 1
Landscapes
- Cold Cathode And The Manufacture (AREA)
Abstract
The present invention provides an electron-tunneling-type power and cool structure and a method for producing the same, in which a semiconductor production process is applied to produce an electron-tunneling-type power and cool structure with a stable vacuum clearance. The production method comprises: providing a substrate; sequentially forming a binding layer, a first metal layer and a plurality of support insulation mats on the surface of the substrate; coating a polymer layer on the surface of the thick metal layer and covering the support insulation mats and filling up the clearances; thinning the polymer layer until exposing the tip of the support insulation mats; forming a second metal layer on the polymer layer and the support insulation mats; using a thermal decomposition process to remove the polymer layer and separating the first metal layer and the second metal layer with the support insulation mats and using them to maintain a clearance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93125948A TWI233636B (en) | 2004-08-27 | 2004-08-27 | Electron-tunneling-type power and cool structure and method for producing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93125948A TWI233636B (en) | 2004-08-27 | 2004-08-27 | Electron-tunneling-type power and cool structure and method for producing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI233636B TWI233636B (en) | 2005-06-01 |
TW200608472A true TW200608472A (en) | 2006-03-01 |
Family
ID=36501791
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW93125948A TWI233636B (en) | 2004-08-27 | 2004-08-27 | Electron-tunneling-type power and cool structure and method for producing the same |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI233636B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI401830B (en) * | 2008-12-31 | 2013-07-11 | Ind Tech Res Inst | Low heat leakage thermoelectric nanowire arrays and manufacture method thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI404152B (en) * | 2007-01-16 | 2013-08-01 | Univ Nat Cheng Kung | Immediate Damage Detection Method and Measurement of Porous Ultra - low Dielectric Materials |
-
2004
- 2004-08-27 TW TW93125948A patent/TWI233636B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI401830B (en) * | 2008-12-31 | 2013-07-11 | Ind Tech Res Inst | Low heat leakage thermoelectric nanowire arrays and manufacture method thereof |
Also Published As
Publication number | Publication date |
---|---|
TWI233636B (en) | 2005-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2888663B1 (en) | METHOD OF REDUCING THE ROUGHNESS OF A THICK LAYER OF INSULATION | |
WO2011008925A3 (en) | Methods for forming dielectric layers | |
TW200603275A (en) | Semiconductor device and fabrication method thereof | |
PL2165371T3 (en) | Method for producing an emitter structure and emitter structures resulting therefrom | |
WO2007025521A3 (en) | Method for the production of a semiconductor component comprising a planar contact, and semiconductor component | |
ATE361379T1 (en) | SURFACE COATING PROCESS | |
TW200746262A (en) | Method of manufacturing nitride semiconductor substrate and composite material substrate | |
SG152141A1 (en) | Soi substrates with a fine buried insulating layer | |
TW200625596A (en) | Inductor and method of forming the same | |
MY147005A (en) | Method for bonding a semiconductor substrate to a metal subtrate | |
TW200746315A (en) | A method of forming a semiconductor structure | |
TW200721915A (en) | Electrostatic chuck for vacuum processing apparatus, vacuum processing apparatus having the same, and method for manufacturing the same | |
EP2133922A3 (en) | Insulating coating, methods of manufacture thereof and articles comprising the same | |
TW200516700A (en) | Metho for forming intermetal dielectric | |
TW200717713A (en) | Advanced forming method and structure of a semiconductor device | |
WO2012000612A3 (en) | Method for producing a selective doping structure in a semiconductor substrate in order to produce a photovoltaic solar cell | |
TW200943496A (en) | Support substrate structure for supporting electronic component thereon and manufacturing method thereof | |
TW200608472A (en) | Electron-tunneling-type power and cool structure and method for producing the same | |
WO2011116762A3 (en) | Method for producing a semiconductor solar cell | |
TW200419840A (en) | Fuel cell, method of manufacturing the same, electronic apparatus and vehicle | |
TWI267133B (en) | Method of segmenting a wafer | |
WO2011141139A3 (en) | Method for producing a solar cell that can be contacted on one side from a silicon semiconductor substrate | |
TW200715438A (en) | Manufacturing Method for an integrated semiconductor structure and corresponding integrated semiconductor structure | |
TW200512926A (en) | Method of manufacturing semiconductor device | |
SG159476A1 (en) | Method for manufacturing semiconductor layer and semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |