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TW200607010A - Method of fabricating a gate oxide layer - Google Patents

Method of fabricating a gate oxide layer

Info

Publication number
TW200607010A
TW200607010A TW093123207A TW93123207A TW200607010A TW 200607010 A TW200607010 A TW 200607010A TW 093123207 A TW093123207 A TW 093123207A TW 93123207 A TW93123207 A TW 93123207A TW 200607010 A TW200607010 A TW 200607010A
Authority
TW
Taiwan
Prior art keywords
substrate
oxide layer
gate oxide
fabricating
spacer
Prior art date
Application number
TW093123207A
Other languages
English (en)
Other versions
TWI253686B (en
Inventor
Tung-Po Chen
Original Assignee
Powerchip Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Powerchip Semiconductor Corp filed Critical Powerchip Semiconductor Corp
Priority to TW093123207A priority Critical patent/TWI253686B/zh
Priority to US10/905,086 priority patent/US20060030136A1/en
Publication of TW200607010A publication Critical patent/TW200607010A/zh
Application granted granted Critical
Publication of TWI253686B publication Critical patent/TWI253686B/zh

Links

Classifications

    • H10P30/204—
    • H10P30/208—
    • H10W10/0145—
    • H10W10/17—
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/69215—

Landscapes

  • Element Separation (AREA)
TW093123207A 2004-08-03 2004-08-03 Method of fabricating a gate oxide layer TWI253686B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW093123207A TWI253686B (en) 2004-08-03 2004-08-03 Method of fabricating a gate oxide layer
US10/905,086 US20060030136A1 (en) 2004-08-03 2004-12-14 Method of fabricating a gate oxide layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093123207A TWI253686B (en) 2004-08-03 2004-08-03 Method of fabricating a gate oxide layer

Publications (2)

Publication Number Publication Date
TW200607010A true TW200607010A (en) 2006-02-16
TWI253686B TWI253686B (en) 2006-04-21

Family

ID=35757958

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093123207A TWI253686B (en) 2004-08-03 2004-08-03 Method of fabricating a gate oxide layer

Country Status (2)

Country Link
US (1) US20060030136A1 (zh)
TW (1) TWI253686B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI327754B (en) * 2006-01-04 2010-07-21 Promos Technologies Inc Method for preparing gate oxide layer
US8053322B2 (en) * 2008-12-29 2011-11-08 Texas Instruments Incorporated Epitaxial deposition-based processes for reducing gate dielectric thinning at trench edges and integrated circuits therefrom
CN105789038B (zh) * 2016-04-15 2019-03-12 上海华虹宏力半导体制造有限公司 半导体结构及其形成方法
FR3067516B1 (fr) * 2017-06-12 2020-07-10 Stmicroelectronics (Rousset) Sas Realisation de regions semiconductrices dans une puce electronique
CN111627810B (zh) * 2020-06-05 2022-10-11 合肥晶合集成电路股份有限公司 一种半导体结构及其制造方法
US12002707B2 (en) * 2020-08-06 2024-06-04 Changxin Memory Technologies, Inc. Semiconductor structure and manufacturing method thereof
CN114068411B (zh) * 2020-08-06 2024-10-01 长鑫存储技术有限公司 半导体结构及其制作方法
CN113345834A (zh) * 2021-08-06 2021-09-03 晶芯成(北京)科技有限公司 低压器件及其制作方法
CN115458398A (zh) * 2022-10-09 2022-12-09 上海积塔半导体有限公司 半导体结构及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1131742A (ja) * 1997-07-14 1999-02-02 Mitsubishi Electric Corp 半導体装置の製造方法
JPH11111710A (ja) * 1997-10-01 1999-04-23 Nec Corp 半導体装置およびその製造方法
US6635537B2 (en) * 2001-04-06 2003-10-21 United Microelectronics Corp. Method of fabricating gate oxide

Also Published As

Publication number Publication date
TWI253686B (en) 2006-04-21
US20060030136A1 (en) 2006-02-09

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees