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TW200606283A - Electrochemical plating cell with an auxiliary electrode in an isolated anolyte compartment - Google Patents

Electrochemical plating cell with an auxiliary electrode in an isolated anolyte compartment

Info

Publication number
TW200606283A
TW200606283A TW094120654A TW94120654A TW200606283A TW 200606283 A TW200606283 A TW 200606283A TW 094120654 A TW094120654 A TW 094120654A TW 94120654 A TW94120654 A TW 94120654A TW 200606283 A TW200606283 A TW 200606283A
Authority
TW
Taiwan
Prior art keywords
fluid volume
plating
substrate
auxiliary electrode
anode
Prior art date
Application number
TW094120654A
Other languages
Chinese (zh)
Inventor
Nicolay Kovarsky
Anzhong Chang
Saravjeet Singh
You Wang
John O Dukovic
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200606283A publication Critical patent/TW200606283A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/002—Cell separation, e.g. membranes, diaphragms
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/16—Regeneration of process solutions
    • C25D21/22—Regeneration of process solutions by ion-exchange
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

An apparatus and method for plating a metal layer onto a substrate is provided. The plating apparatus includes a catholyte fluid volume positioned to receive a substrate for plating, an anolyte fluid volume at least partially ionically separated from the catholyte fluid volume, an anode assembly having one or more anode segments positioned in the anolyte fluid volume, an auxiliary fluid volume being electrically isolated from the anolyte fluid volume and at least partially in ionic communication with the catholyte fluid volume, and an auxiliary electrode positioned in the auxiliary fluid volume. The plating method includes plating a thin metal seed uniformly in the center of the substrate and near the edges of the substrate by providing a current pulse from a first power supply and a second power supply which are in electrical communication in reverse polarity with one segment of the anode and the auxiliary electrode. Thereafter, gap filling of features and bulk metal plating are performed by applying a second current pulse where current is provided to all segment of the anode.
TW094120654A 2004-06-28 2005-06-21 Electrochemical plating cell with an auxiliary electrode in an isolated anolyte compartment TW200606283A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/880,103 US20050284751A1 (en) 2004-06-28 2004-06-28 Electrochemical plating cell with a counter electrode in an isolated anolyte compartment

Publications (1)

Publication Number Publication Date
TW200606283A true TW200606283A (en) 2006-02-16

Family

ID=35427602

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094120654A TW200606283A (en) 2004-06-28 2005-06-21 Electrochemical plating cell with an auxiliary electrode in an isolated anolyte compartment

Country Status (5)

Country Link
US (1) US20050284751A1 (en)
JP (1) JP2008504444A (en)
KR (1) KR101248179B1 (en)
TW (1) TW200606283A (en)
WO (1) WO2006012112A2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102348505A (en) * 2009-03-10 2012-02-08 奥加诺株式会社 Ion adsorption module and method of treating water
CN115896904A (en) * 2023-03-09 2023-04-04 苏州智程半导体科技股份有限公司 Wafer electroplating cavity structure

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US7842173B2 (en) * 2007-01-29 2010-11-30 Semitool, Inc. Apparatus and methods for electrochemical processing of microfeature wafers
US8858774B2 (en) * 2008-11-07 2014-10-14 Novellus Systems, Inc. Electroplating apparatus for tailored uniformity profile
US8508018B2 (en) * 2010-09-24 2013-08-13 Intel Corporation Barrier layers
CN110168145B (en) 2016-07-13 2021-08-06 英奥创公司 Electrochemical methods, components and compositions
US11781235B2 (en) * 2018-12-28 2023-10-10 Acm Research (Shanghai), Inc. Plating apparatus and plating method

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US6149781A (en) * 1994-01-10 2000-11-21 Forand; James L. Method and apparatus for electrochemical processing
US5556379A (en) * 1994-08-19 1996-09-17 Lifenet Research Foundation Process for cleaning large bone grafts and bone grafts produced thereby
US5620581A (en) * 1995-11-29 1997-04-15 Aiwa Research And Development, Inc. Apparatus for electroplating metal films including a cathode ring, insulator ring and thief ring
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102348505A (en) * 2009-03-10 2012-02-08 奥加诺株式会社 Ion adsorption module and method of treating water
CN115896904A (en) * 2023-03-09 2023-04-04 苏州智程半导体科技股份有限公司 Wafer electroplating cavity structure

Also Published As

Publication number Publication date
WO2006012112A2 (en) 2006-02-02
JP2008504444A (en) 2008-02-14
KR20070027753A (en) 2007-03-09
KR101248179B1 (en) 2013-03-27
US20050284751A1 (en) 2005-12-29
WO2006012112A3 (en) 2006-06-22

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