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TW200604577A - Photoelectric sensor - Google Patents

Photoelectric sensor

Info

Publication number
TW200604577A
TW200604577A TW093128857A TW93128857A TW200604577A TW 200604577 A TW200604577 A TW 200604577A TW 093128857 A TW093128857 A TW 093128857A TW 93128857 A TW93128857 A TW 93128857A TW 200604577 A TW200604577 A TW 200604577A
Authority
TW
Taiwan
Prior art keywords
light
receiving element
emitting element
light receiving
light emitting
Prior art date
Application number
TW093128857A
Other languages
Chinese (zh)
Other versions
TWI276830B (en
Inventor
Shoichi Mitsutake
Kazuyoshi Hamada
Original Assignee
Takenaka Electronic Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Takenaka Electronic Ind filed Critical Takenaka Electronic Ind
Publication of TW200604577A publication Critical patent/TW200604577A/en
Application granted granted Critical
Publication of TWI276830B publication Critical patent/TWI276830B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
    • G01V8/00—Prospecting or detecting by optical means
    • G01V8/10—Detecting, e.g. by using light barriers
    • G01V8/20—Detecting, e.g. by using light barriers using multiple transmitters or receivers

Landscapes

  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geophysics (AREA)
  • Geophysics And Detection Of Objects (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Switches Operated By Changes In Physical Conditions (AREA)

Abstract

The present invention provides a compact detection head and a photoelectric sensor having higher reliability. The photoelectric sensor 1 has an optical system arranged so that the angle range of a light on which it is projected from a light emitting element 2, and the angle range of the light which can be received by a light receiving element 3 may overlap, and of a limited reflection type in which an object W to be detected is detected and made incident to the light receiving element 3 by reflecting the light projected from the light emitting element 2 on the surface of the object W in the a duplicating region S. A directional plate 5 having a predetermined degree of inclining angle beforehand in the light flow path from the light emitting element 2 to the light receiving element 3 installs a plurality of filters 4 each for regulating an angle of field tuning arranged at predetermined intervals to one or both sides of emitting opening of the light emitting element 2 or the emitting opening of the light receiving element 3. The directions of the lights P, R emitted from the light emitting element 2 or incidence to the light receiving element 3 is restricted in a predetermined direction. It inhibits that the light from the light emitting element 2 outside of the projecting light of the duplicating region S or the duplicating region S performs incident to the light receiving element 3.
TW093128857A 2004-07-22 2004-09-23 Photoelectric sensor TWI276830B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004213904A JP3935898B2 (en) 2004-07-22 2004-07-22 Photoelectric sensor

Publications (2)

Publication Number Publication Date
TW200604577A true TW200604577A (en) 2006-02-01
TWI276830B TWI276830B (en) 2007-03-21

Family

ID=35905639

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093128857A TWI276830B (en) 2004-07-22 2004-09-23 Photoelectric sensor

Country Status (3)

Country Link
JP (1) JP3935898B2 (en)
KR (1) KR100611129B1 (en)
TW (1) TWI276830B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI479177B (en) * 2012-03-15 2015-04-01 Omron Tateisi Electronics Co Reflection optoelectronic sensor
CN108132138A (en) * 2017-11-23 2018-06-08 矽力杰半导体技术(杭州)有限公司 Optical sensing module
CN108630561A (en) * 2017-03-15 2018-10-09 北京北方华创微电子装备有限公司 The detection device and detection method of substrate surface, pass sheet chamber room

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008033204A1 (en) * 2008-07-15 2010-02-04 Trw Automotive Electronics & Components Gmbh Optical sensor
JP2019133960A (en) 2016-05-26 2019-08-08 シャープ株式会社 Optical sensor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63275920A (en) * 1987-05-07 1988-11-14 Shin Etsu Polymer Co Ltd Light detecting device
JP2660929B2 (en) * 1989-04-19 1997-10-08 ファナック株式会社 Arc sensor using CCD solid-state imaging device
JPH0533085U (en) * 1991-10-09 1993-04-30 アツミ電気株式会社 Infrared projector and infrared receiver
JPH06160528A (en) * 1992-11-25 1994-06-07 Matsushita Electric Works Ltd Polarization regression type photoelectric sensor
JPH0743465A (en) * 1993-07-26 1995-02-14 Saraya Kk Photoelectric sensor
JP3473658B2 (en) * 1996-07-18 2003-12-08 アルプス電気株式会社 Fingerprint reader
JPH1137740A (en) * 1997-07-24 1999-02-12 Glory Ltd Damage detecting device for paper sheets
JPH11163080A (en) * 1997-11-26 1999-06-18 Mecs Corp Robot hand
JP2002026375A (en) * 2000-07-05 2002-01-25 Oputeikon:Kk Reflection light sensor
JP4357731B2 (en) * 2000-10-31 2009-11-04 サンクス株式会社 Reflection type photoelectric sensor detection head
JP2002267498A (en) * 2001-03-14 2002-09-18 Olympus Optical Co Ltd Photodetector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI479177B (en) * 2012-03-15 2015-04-01 Omron Tateisi Electronics Co Reflection optoelectronic sensor
CN108630561A (en) * 2017-03-15 2018-10-09 北京北方华创微电子装备有限公司 The detection device and detection method of substrate surface, pass sheet chamber room
CN108132138A (en) * 2017-11-23 2018-06-08 矽力杰半导体技术(杭州)有限公司 Optical sensing module

Also Published As

Publication number Publication date
KR100611129B1 (en) 2006-08-10
JP2006040913A (en) 2006-02-09
KR20060008201A (en) 2006-01-26
JP3935898B2 (en) 2007-06-27
TWI276830B (en) 2007-03-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees